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STRUCTURE PRODUCT
Silicon Monolithic Integrated Circuit CONSTANT VOLTAGE AND CONSTANT CURRENT CONTROLLER FOR BATTERY CHARGERS AND ADAPTORS
TYPE
BD6551G
FEATURE ・ ・ ・ ・ Constant voltage and constant current control Power supply voltage: 1.8V~12V High accuracy reference voltage: 1.21V±1% An accuracy for current-detecting voltage: 200mV±2%
○ ABSOLUTE MAXIMUM RATINGS PARAMETER
Power Supply Voltage ICT Pin Maximum Voltage Power Dissipation
(Ta=25℃)
Symbol
VMAX VICTMAX Pd Topr Tjmax Tstg
Limit
-0.3 ~ 14 -0.3 ~ VCC 675 *1 0 ~ +85 150 -55 ~ +150
Unit
V V mW ℃ ℃ ℃
Operating Temperature Range Maximum Junction Temperature Storage Temperature Range
*1 Pd derated at 5.4mW/℃ for temperature above Ta=25℃, mounted on 70mm×70mm×1.6mm glass-epoxy PCB.
○ OPERATING CONDITIONS (Ta=0~+85℃) PARAMETER Symbol
Power Supply Voltage VCC
Limit
1.8~12 *2
Unit
V
*2 Except an amplifier for voltage control loop guaranteed above VCC=2.5V.
REV. A
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○ ELECTRICAL CHARACTERISTICS
PARAMETER
【Total Current Consumption】 Total Supply Current - not taking the output sinking current into account 【Voltage Control Loop】 Transconduction Gain(VCT). Sink Current Only Voltage Control Loop Reference at 1.5mA sinking current 【Current Control Loop】 Transconduction Gain(ICT). Sink Current Only Current Control Loop Reference at 2.5mA sinking current Current out of pin ICT at -200mV 【Output Stage】 Output Short Circuit Current, Output to VCC, Sink Current Only 【UVLO】 UVLO Threshold Voltage UVLO Hysteresis Width Output Short Circuit Current at Full Drive
(Ta=25℃ and Vcc=+5V (unless otherwise specified))
Symbol
MIN.
-
Limit TYP.
0.6
MAX.
2
UNIT
Conditions
ICC
mA
Ta=25℃
GMV VREF
1.0 1.198 1.186 1.5 196 192 13
4.5 1.21 1.21 3.5 200 200 23
1.222 1.234 204 208 33
mA/mV V
Ta=25℃ Ta=25℃ 0 < Ta < 85℃ Ta=25℃ Ta=25℃ 0 < Ta < 85℃ Ta=25℃ Ta=25℃,OUT=VCC, VSE=0V, ICT=-0.3V
GMI VSE Ibi
mA/mV mV μA
IOS
-
25
50
mA
VVT DVVT IOS2
1.8 40 5.0
1.9 100 -
2.0 160 -
V mV mA
VCC=L→H Ta=25℃ VCC=OUT=1.8V
● This product is not designed for protection against radio active rays.
○ PACKEGE, MARKING SPECIFICATION
SSOP6 (UNIT:mm)
REV. A
3/4
○ BLOCK DIAGRAM VCC 6 1.21V
VOLTAGE REFERENCE
VCC
+ -
3 OUT 1 VCT
+
UVLO
+ 2 GND
4 ICT
5 VSE
○ PIN No. & PIN NAME PIN No. PIN Name
1 2 3 4 5 6 VCT GND OUT ICT VSE VCC
Function
Input Pin of the Voltage Control Loop Ground Line. 0V Reference For All Voltages Output Pin. Sinking Current Only Input Pin of the Current Control Loop(+) Input Pin of the Current Control Loop(-) Positive Power Supply Line. This pin doubles low voltage input detection pin.
REV. A
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○ Operation Notes 1) Absolute maximum ratings
An excess in the absolute maximum rating, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.
2) GND voltage
The potential of GND pin must be minimum potential in all condition. As an exception, the circuit design allows voltages up to -0.3 V to be applied to the ICT pin.
3) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
4) Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together.
5) Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
6) Mutual impedance
Power supply and ground wiring should reflect consideration of the need to lower mutual impedance and minimize ripple as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating inductance and capacitance).
7) Regarding input pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, as shown in the figures below, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. Although the circuit design allows voltages up to -0.3 V to be applied to the ICT pin, voltages lower than this may cause the behavior described above. Use caution when designing the circuit. Resistor (Pin A) ~ ~ P N P substrate GND ~ ~ P+ N N P+ N P substrate Parasitic elements (Pin B) Parasitic elements GND B C E Other Adjacent Elements GND Parasitic elements ~ ~ GND (Pin B) Transistor (NPN) B C ~ ~ N P+ N P P+ N
E GND
Parasitic elements (Pin A)
Simplified structure of a Monolithic IC
REV. A
Notice
Notes
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R1120A