BD6607KN-E2

1/4 Structure Silicon Monolithic Integrated Circuit Product Series System Motor Driver for Portable MD Type BD6607KN ・Operates at low power supply voltage (VCC=1.8V min.) Features ・Incorporates two, 3-phase half-bridge driver circuits (low ON resistance power DMOS 0.85Ω typ.) ・Incorporates two H-bridge driver circuits (low ON resistance power DMOS 0.70Ω typ.) ・Incorporates two comparator circuits for motor BEMF voltage detection ・Incorporates a standby circuit (current at standby 0μA) ・Incorporates thermal shutdown circuit ○Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit VCC 7 V Power supply voltage for driver VM 7 V Power supply voltage for pre-driver circuit VG 15 V VIN 0～VCC V Iomax. *1000 mA Power supply voltage for control circuit Input voltage Driver output current Power dissipation Pd **1250 mW Operating temperature range Topr -25～+75 ℃ Storage temperature range Tstg -55～+150 ℃ Tjmax 150 ℃ Junction temperature ＊Must not exceed Pd or ASO, Tjmax=150℃. ＊＊Reduced by 10mW/°C over Ta=25°C, when mounted on a glass epoxy board (70mmx70mmx1.6mm). ○Operating conditions (Ta= -25 ～ +75°C) Parameter Symbol Min. Typ. Max. Unit VCC 1.8 2.4 5.0 V Power supply voltage for driver VM 0.9 1.2 5.0 V Power supply voltage for pre-driver circuit VG VM+5 - 12 V Input voltage for logic signal *1 VIL 0 - VCC V Input voltage for analog signal *2 VIA 0 - VM V Power supply voltage for control circuit *1 : 1 STALL, ST1, ST2, FI1, RI1, FI2, RI2, UI1, VI1, WI1, PWM1, UI2, VI2, WI2, PWM2 pins *2 : CPUI1, CPUVI1, CPWI1, CPCOM1, CPUI2, CPVI2, CPWI2, CPCOM2 pins This product described in this specification is not judged whether it applies to COCOM regulations. Please confirm in case of export. This product is not designed for protection against radioactive rays. REV. C 2/4 ○Electrical characteristics (Unless otherwise specified, Ta=25°C, VCC=2.4V, VM=1.2V, VG=6.8V) Parameter Symbol Limit Min. Typ. Max. Unit Conditions ICCST - - 1 μA STALL=L(*1) Driver power supply current at standby IMST - - 1 μA STALL=L(*1) Pre-driver power supply current at standby IGST - - 1 μA STALL=L(*1) ICCN - 4 10 μA STALL=L(*1) IGN - 100 160 μA STALL=L(*1) ICC - 8 15 μA STALL=H,ST1=ST2=L(*2) IG - 0.7 0.95 mA STALL=H,ST1=ST2=L(*2) - - V Control circuit current at standby Power supply current of control circuit at no signal Power supply current of pre-driver at no signal Power supply current of control circuit at operation Power supply current of pre-driver at operation ～Logic input～ VCC Logic H level input voltage VIH Logic L level input voltage VIL Logic H level input current IIH - - 1 μA FI, RI, UI, VI, WI, PWM pins Logic L level input current IIL -1 - - μA FI, RI, UI, VI, WI, PWM pins RST 0.33 0.6 1.0 MΩ applied to STALL, ST1,ST2 pins ST pin pull-down resistance x0.8 - - VCC x0.2 V ～BEMF voltage detection comparator～ Comparator input offset voltage VOS -5 - 5 mV Comparator input current ICP -1 - 1 μA - - V Isource=500μA V Isink=500A VCC Comparator H level output voltage VOH Comparator L level output voltage VOL - - RON1,2 - 0.7 1.30 Ω RONU,V,W - 0.85 1.55 Ω x0.8 VCC x0.2 ～Power MOS～ H-bridge output ON resistance Half-bridge output ON resistance upper and lower ON resistance in total upper and lower ON resistance in total ＊1 : Each input pin=L or H ＊2 : PWM1, PWM2 pins=176.4kHz, each H-bridge input pin= 88.2kHz, each 3-phase half-bridge input pin=100Hz REV. C 3/4 ○ Package outlines Type BD6607KN Lot No. ○Pin No./Pin name UQFN64 outlines (Unit：mm) WI2(48) VI2(549) UI2(50) PWM2(51) GND(56) ○Block diagram PGNDW2(47) VCC(57) Decoder UO2(39,40) Pre Drive Stand-by STALL(55) PGNDUV2(41) ST2(45) ST1(4) VMU2(38) VMVW2(44) PGND2(34) VO2(42,43) FI2(30) FO2(32,33) WO2(46) VMR2(37) + Pre Drive VMF2(31) － BEMF COMP2 CPUO2(52) + － RO2(35,36) CPVO2(53) + － CPWO2(54) RI2(29) COM2(28) CPUI2(27) CPVI2(26) CPWI2(25) VG(58) PGNDW1(2) PGND1(15) PGNDUV1(8) FI1(19) VMR1(12) UO1(9,10) Pre Drive VMF1(18) Pre Drive FO1(16,17) VMU1(11) VMVW1(5) VO1(6,7) RO1(13,14) RI1(20) WO1(3) BEMF COMP1 Decoder + － CPUO1(61) + － CPVO1(60) + CPWO1(59) COM1(21) CPVI1(23) CPUI1(22) CPWI1(24) WI1(1) UI1(63) VI1(64) PWM1(62) － REV. C NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Pin name WI1 PGNDW1 WO1 ST1 VMVW1 VO1 VO1 PGNDUV1 UO1 UO1 VMU1 VMR1 RO1 RO1 PGND1 FO1 FO1 VMF1 FI1 RI1 COM1 CPUI1 CPVI1 CPWI1 CPWI2 CPVI2 CPUI2 COM2 RI2 FI2 VMF2 FO2 NO. 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 Pin name FO2 PGND2 RO2 RO2 VMR2 VMU2 UO2 UO2 PGNDUV2 VO2 VO2 VMVW2 ST2 WO2 PGNDW2 WI2 VI2 UI2 PWM2 CPUO2 CPVO2 CPWO2 STALL GND VCC VG CPWO1 CPVO1 CPUO1 PWM1 UI1 VI1 4/4 ○Notes on the use (1) Absolute maximum ratings If the input voltage or the operating temperature range exceeds absolute maximum ratings, IC may be damaged. No destruction mode (e.g., short-circuiting or open) can be specified in that case. If such special mode as will exceed absolute maximum ratings is assumed, take the physical safety measures, such as a fuse. (2) Power supply lines The regenerated current by BEMF of the motor will return. Therefore, take measures, such as the insertion of a capacitor between the power supply and GND as the pass of the regenerated current. Determine the capacitance in full consideration of all the characteristics of the electrolytic capacitor, because the electrolytic capacitor may loose some capacitance at low temperatures. If the connected power supply does not have sufficient current absorption capacity, regenerative current will cause the voltage of the power supply line to rise, which the product and its peripheral circuit may exceed the absolute maximum ratings. It is recommended to implement physical safety measures such as the insertion of a voltage clamp diode between the power supply and GND pins. (3) Ground potential Ensure a minimum GND pin potential in all operating conditions. (4) Design for heat Use the design for heat that allows for a sufficient margin in light of the power dissipation (Pd) in actual using conditions. (5) Operation in strong magnetic field Use caution when using the IC in the strong magnetic field as doing so may cause the IC to malfunction. (6) ASO When using the IC, make settings so that the output transistors for the motor will not be used under conditions in excess of the absolute maximum ratings and ASO. (7) Thermal shutdown circuit This IC incorporates thermal shutdown circuit(TSD circuit). When the chip temperature becomes the one shown in below, TSD circuit operates and makes the coil output to motor open. It is designed to shut the IC off from runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. TSD ON temperature[℃] (typ.) Hysteresis temperature 175 (8) [℃] (typ.) 25 Ground wiring pattern When having both small signal and large current GND, it is recommended to isolate the two GND patterns, placing a single ground point at the application's reference point so that the pattern wiring resistance and voltage variations caused by large currents do not cause voltage variations of the small signal GND. Be careful not to change the GND wiring pattern of any external parts, either. REV. C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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