Datasheet
Power Management LSI
for Mobile Phone
BD7185AGWL
Key Specifications
Input Voltage Range:
Output Voltage Range:
Switching Frequency:
OFF Current:
Operating Temperature Range:
General Description
The BD7185AGWL is an integrated Power Management
LSI available in a small 80-pins 0.4mm-pitch 3.8mm-by3.8mm Wafer-level CSP package, which is designed to
meet demands for space-constrained Smart phones.
The device provides 5-Buck Converters.
The device also includes 12 general-purpose LDOs
providing a wide range of voltage and current
capabilities.
Package
UCSP50L3C
2.6V to 5.5V
1.0V to 3.4V
2.0MHz(Typ)
0.3μA (Typ)
-35℃ to +85℃
W(Typ) x D(Typ) x H(Max)
3.80mm x 3.80mm x 0.57mm
All Buck Converters and LDOs are fully controllable by
the I2C interface. The BD7185AGWL is very easy to
use in any mobile platforms.
Features
5-channel high-efficiency Buck Converters
2
(16-step adjustable VO by I C)
12-channel CMOS-type LDO
(16-step adjustable VO by I2C)
LDO and Buck Converter power ON/OFF control by
I2C interface or external pin.
Power ON/OFF sequence.
32.768kHz OSC and output buffer.
4-to-1 analog switch.
TCXO buffer.
SIM card I/F
I2C compatible Interface.
2
I C device address changeable by ADRS pin.
(Device address is “1001011”,”1001100”)
Small and thin CSP package
(3.8mm X 3.8mm height 0.57mm max)
Applications
Smart Phones
Tablets
Mobile Router
Data Transmitter
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
1/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Absolute Maximum Ratings（Ta=25C）
Parameter
Maximum Supply Voltage 1
(VBATREF,VBAT, VIN1)
Maximum Supply Voltage 2
(PBAT1,2,3,4,5)
Maximum Supply Voltage 3
(VIN2 )
Symbol
Rating
Unit
VBATMAX
7.0
V
VPBATMAX
7.0
V
VIN2MAX
4.2
V
VINMAX1
7.0
V
VINMAX2
DVDD + 0.3
V
VINMAX3
VIN2MAX+ 0.3
V
Maximum Input Voltage 1
(OUT1, OUT2, OUT3, OUT4, OUT5,
OUT6,
OUT7, OUT8, OUT9, OUT10,
LX1, LX2, LX3, LX4, LX5,
PSET, ADRS, EN_O7, PWRON,
PWRHOLD, POR, TCXO_IN,
(Note 1)
OSC_IN, DVDD
OSC_OUT, SIMRSTIN, SIMCLKIN,
SIMIODBB, SIMIO)
Maximum Input Voltage 2
(SDA, SCL)
Maximum Input Voltage 3
(OUT11,12, REFC)
(Note 2)
Power Dissipation
Pd
1.38
W
Operating Temperature Range
Topr
-35 ～ +85
C
Storage Temperature Range
Tstg
-55 ～ +125
C
(Note 1) The DVDD Voltage must be under the Battery voltage VBAT, PBAT anytimes.
(Note 2) This is an allowable loss of the ROHM evaluation board (54mm×62mm). .When a substrate is implemented, the allowable loss varies from the size and material
of the substrate. Derate 1% per °C for temperatures higher than 25°C.
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between
pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute
maximum ratings.
Recommended Operating Conditions (Ta=25C)
Parameter
Symbol
Range
Unit
VBAT Voltage
VBAT
2.70 ～ 5.50
(Note3)
PBAT Voltage
VPBAT
2.70 ～ 5.50
(Note3)
V
V
V
VIN1 Voltage
VIN1
2.70 ～ 5.50
(Note4)
VIN2 Voltage
VIN2
1.40 ～ 1.80
(Note5)
V
(Note 3) Whenever VBAT, PBAT, VIN1, or VIN2 falls below the LDO or SWREG output voltage, or below certain levels, LDO and SWREG output is not guaranteed to
meet the published specifications. It is necessary to supply the same voltage to VBAT and PBAT.
(Note 4) It is recommended to connect SWREG5 output to VIN1 to maximize efficiency.
(Note 5) It is recommended to connect SWREG4 output to VIN2 to maximize efficiency.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
2/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Block Diagram
1uF
VIN1
VIN1
1uF
VIN1
Digital Power
OUT1
VBAT
1uF
VIN1
I2C Master
1uF
VIN2
1uF
connect to DVDD
OUT1
VDD
SDA
DATA
I2C IF
SCL
CLK
I2C Address
1001011 (ADRS=L)
1001100 (ADRS=H)
ADRS
PSET
PWRON
PWRHOLD
POR
LDO1
POWER
SEQUENCER
2.60V or 1.80V
300mA
LDO2
PBAT1
1.20V
LDO3
1A
PGND1
PBAT2
LDO4
LX2
1.80V
LDO5
500mA
PGND2
LDO6
PBAT3
SWREG3
10uF
LDO7
1.20V
FB3
1uF
for PLL
OUT5
1uF
OUT6
1uF
for TCXO
OUT7
1uF
EN_O7
LDO8
PBAT4
OUT8 for 2.5V R/F
2.50V
150mA
LX4
SWREG4
10uF
LDO9
1.40V
1uF
FB4
LDO10
1uF
OUT10 for HKADC
2.80V
150mA
PBAT5
10uF
2.2uH
LDO11
SWREG5
LX5
1uF
OUT11 for RX PLL
1.20V
150mA
3.20V
PGND5
1.4A
LDO12
FB5
2.2uF
OUT12 for TX PLL
1.20V
150mA
ASWIN1
ASWIN2
for LNA
OUT9
2.80V
150mA
500mA
PGND4
10uF
OUT4
2.80V
50mA
500mA
PGND3
SWREG5
Built in Bypass Mode
Default=On
Detect Voltage=3.35V
(Refer to page61)
1uF
2.80V
150mA
LX3
for SIM I/F
OUT3
1.20V
150mA
FB2
10uF
2.2uH
1uF
2.80V
300mA
SWREG2
10uF
10uF
2.2uH
1.8V (PSET=L)
2.6V (PSET=H)
for USB
OUT2
1.80V
50mA
FB1
10uF
2.2uH
LDO1 Initial
Output Voltage
SWREG1
LX1
10uF
1uF
3.30V
50mA
10uF
2.2uH
for I/O
OUT1
2.2uF
ASWOUT
ASWIN3
ASWIN4
VDDTXCO
connect to
OUT7
0.1uF
TCXO_IN
TCXO
TCXO
Buffer
5pF
TCXO_OUT
GNDTCXO
TCXO_OUT wakes up
530usec from EN_07=H
VDDOSC
connect to
OUT1
0.1uF
OSC_IN
32.768kHz
OSC
C32KOUT
OSC_OUT
GNDOSC
SIMRSTIN
SIMRSTOUT
SIM CARD
I/F
SIMCLKIN
SIMIODBB
SIMCLKOUT
SIMIO
VBATREF
REFC
80 balls
REF
GND
GNDREF
0.1uF
corner
balls
Figure 1. Block Diagram
(Note1) Recommend Parts
1. Coil :
SWREG2, SWREG3, SWREG4 → DFE201612R-H-2R2N ( TOKO )
SWREG1, SWREG5 → DFE252012R-H-2R2N ( TOKO)
2. X’tal : FC135 ( EPSON TOYOCOM )
CM7V-T1A ( MICRO CRYSTAL SWITZERLAND )
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
3/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Pin Configuration
J
OUT8
OUT9
OUT10
OUT1
GND
OSC
GND
REF
OUT12
H
OUT4
OUT5
VIN1
VIN1
OSC_
OUT
OSC_
IN
REFC
VIN2
OUT11
G
OUT6
OUT7
VIN1
VIN1
C32K
OUT
VDD
OSC
VBAT
REF
ASW
OUT
OUT2
F
GND
TCXO
VDD
TCXO
ASWIN
4
ASWIN
3
ASWIN
1
VBAT
OUT3
E
TCXO_
OUT
TCXO_
IN
EN_O7
ASWIN
2
SIMRST
OUT
SIMCLK
OUT
SIMIO
GND
D
PBAT5
PBAT5
POR
PWR
HOLD
SIMRST
IN
SIMCLK
IN
SIMIO
BB
DVDD
C
PGND5
PGND5
FB5
FB4
PSET
ADRS
SDA
SCL
LX1
B
LX5
LX5
PBAT4
PBAT3
FB3
PBAT2
FB2
FB1
PGND1
LX4
PGND4
LX3
PGND3
LX2
PGND2
PBAT1
2
3
4
5
6
7
8
A
1
PWRON
9
Bottom View
Figure 2. Pin Configuration
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
4/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Pin Description
Ball No.
PIN Name
A/D
I/O
Diode
Equivalent
Circuit
Eiqure
Function
+ side
- side
Initial
Condition
Function
(Note6)
A1
TEST1
-
-
-
Non connect pin
(Open or connected to GND.)
VBAT
GND
-
A2
LX4
A
O
A
Inductor Connection for SWREG4
PBAT4
PGND4
HiZ
A3
PGND4
-
-
-
Ground for SWREG4
PBAT4
GND
-
A4
LX3
A
O
A
Inductor Connection for SWREG3
PBAT3
PGND3
HiZ
A5
PGND3
-
-
-
Ground for SWREG3
PBAT3
GND
-
A6
LX2
A
O
A
Inductor Connection for SWREG2
PBAT2
PGND
HiZ
A7
PGND2
-
-
-
Ground for SWREG2
PBAT2
GND
-
A8
PBAT1
-
-
-
Power Supply for SWREG1
-
PGND1
-
A9
TEST2
-
-
-
Non connect pin
(Open or connected to GND)
VBAT
GND
-
B1
LX5
A
O
A
Inductor Connection for SWREG5
PBAT5
PGND5
HiZ
B2
LX5
A
O
A
Inductor Connection for SWREG5
PBAT5
PGND5
HiZ
B3
PBAT4
-
-
-
Power Supply for SWREG4
-
PGND4
-
B4
PBAT3
-
-
-
Power Supply for SWREG3
-
PGND3
-
B5
FB3
A
I/O
B
Voltage Feed back pin for SWREG3
PBAT3
GND
-
B6
PBAT2
-
-
-
Power Supply for SWREG2
-
PGND2
-
B7
FB2
A
I/O
B
Voltage Feed back pin for SWREG2
PBAT2
GND
-
B8
FB1
A
I/O
B
Voltage Feed back pin for SWREG1
PBAT1
GND
-
B9
PGND1
-
-
-
Ground for SWREG1
PBAT1
GND
-
C1
PGND5
-
-
-
Ground for SWREG5
PBAT5
GND
-
C2
PGND5
-
-
-
Ground for SWREG5
PBAT5
GND
-
C3
FB5
A
I/O
B
Voltage Feed back pin for SWREG5
PBAT5
GND
-
C4
FB4
A
I/O
B
Voltage Feed back pin for SWREG4
PBAT4
GND
-
C5
PSET
D
I
C
LDO1 Initial voltage set pin
(L=1.8V, H=2.6V)
PBAT3
GND
-
Connect to GND
C6
ADRS
D
I
C
Logic Selector
PBAT4
GND
-
I2C Address
1001011 (ADRS=L)
1001100 (ADRS=H)
C7
SDA
D
I
D
I2C data input
VBAT
GND
-
C8
SCL
D
I
E
I2C clock input
VBAT
GND
-
C9
LX1
A
O
A
Inductor Connection for SWREG1
PBAT1
PGND1
HiZ
(Note6)
(Note 6) TEST1, TEST2, TEST3, TEST4, TEST5 and TEST6 are used for factory test mode. Please keep these pins open or connected to GND at all times.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
5/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Ball No.
PIN Name
A/D
I/O
Diode
Equivalent
Circuit
Eiqure
Function
+ side
- side
Initial
Condition
Function
D1
PBAT5
-
-
-
Power Supply for SWREG5
-
PGND5
-
D2
PBAT5
-
-
-
Power Supply for SWREG5
-
PGND5
-
D3
POR
D
O
F
Power on reset signal output
VBAT
GND
L
D5
PWRHOLD
D
I
G
Power enable signal
VBAT
GND
-
D6
SIMRSTIN
D
I
H
SIM clock input from DBB
VBAT
GND
-
D7
SIMCLKIN
D
I
H
SIM reset input from DBB
VBAT
GND
-
D8
SIMIOBB
D
I/O
I
SIM data input / output from DBB
VBAT
GND
-
D9
DVDD
-
-
-
VDD for I2C block
VBAT
GND
-
E1
TCXO_OUT
D
O
K
TCXO_Buffer input frequency
VDDTCXO
GND
L
E2
TCXO_IN
A
I
J
TCXO_Buffer output frequency
VBAT
GND
-
E3
EN_07
D
I
L
TCXO Buffer,SWREG4, LDO7,8,11,12
control
VBAT
GND
Pull Down
Pull down 1.5MΩ
E4
PWRON
D
I
L
Start up signal input
VBAT
GND
Pull Down
Pull down 1.5MΩ
E5
ASWIN2
A
I
M
Analog SW input selector2
VBAT
GND
-
E6
SIMRSTOUT
D
O
N
SIM CARD side reset output
GND
L
E7
SIMCLKOUT
D
O
N
SIM CARD side clock output
GND
L
E8
SIMIO
D
I/O
I
SIM CARD side data input/output
VBAT
GND
Pull Up
E9
GND
-
-
-
Ground Pin
VBAT
-
-
F1
GNDTCXO
-
-
-
Ground for TCXO Buffer
VBAT
GND
-
F2
VDDTCXO
-
-
-
Power Supply for TCXO Buffer
-
GND
-
F3
TEST5
-
-
-
VBAT
GND
-
(Note6)
F4
TEST6
-
-
-
VBAT
GND
-
(Note6)
F5
ASWIN4
A
I
M
Analog SW input selector4
VBAT
GND
-
F6
ASWIN3
A
I
M
Analog SW input selector3
VBAT
GND
-
F7
ASWIN1
A
I
M
Analog SW input selector1
VBAT
GND
-
F8
VBAT
-
-
-
Power Supply for IC
-
GND
-
F9
OUT3
A
O
O
LDO3 output
VBAT
GND
Non connect pin
(Open or connected to GND.)
Non connect pin
(Open or connected to GND.)
VBAT
OUT3
VBAT
OUT3
(Note7)
Pull up 20KΩ
to OUT1
Pull up 10KΩ
to OUT3
(Note 6) TEST1, TEST2, TEST3, TEST4, TEST5 and TEST6 are used for factory test mode. Please keep these pins open or connected to GND at all times.
(Note 7) POR needs a pull-up resistance in the PCB layout.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
6/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Ball No.
PIN Name
A/D
I/O
Diode
Equivalent
Circuit
Eiqure
Function
+ side
- side
Initial
Condition
G1
OUT6
A
O
P
LDO6 output
VIN1
GND
-
G2
OUT7
A
O
P
LDO7 output
VIN1
GND
-
G3
VIN1
-
-
-
Power Supply input for LDO
-
GND
-
G4
VIN1
-
-
-
Power Supply input for LDO
VBAT
GND
-
G5
C32KOUT
A
O
Q
32.768kHz output
VBAT
GND
-
G6
VDDOSC
-
-
-
Power Supply for RTC Block
-
GND
-
G7
VBATREF
-
-
-
Power Supply for Reference Block
-
GND
-
G8
ASWOUT
A
O
M
Analog SW selector Output
VBAT
GND
-
G9
OUT2
A
O
O
LDO2 output
VBAT
GND
-
H1
OUT4
A
O
P
LDO4 output
VIN1
GND
-
H2
OUT5
A
O
P
LDO5 output
VIN1
GND
-
H3
VIN1
-
-
-
Power Supply input for LDO
VBAT
GND
-
H4
VIN1
-
-
-
Power Supply input for LDO
VBAT
GND
-
H5
OSC_OUT
A
I/O
R
32.768kHz crystal connect terminal
-
GND
-
H6
OSC_IN
A
I/O
R
32.768kHz crystal connect terminal
-
GND
-
H7
REFC
A
O
S
Reference Voltage output
VBAT
GND
-
H8
VIN2
-
-
-
Power Supply input for LDO
VBAT
GND
-
H9
OUT11
A
O
T
LDO11 output
VIN2
GND
-
VBAT
GND
-
J1
TEST4
-
-
-
Non connect pin
(Open or connected to GND.)
J2
OUT8
A
O
P
LDO8 output
VIN1
GND
-
J3
OUT9
A
O
P
LDO9 output
VIN1
GND
-
J4
OUT10
A
O
P
LDO10 output
VIN1
GND
-
J5
OUT1
A
O
P
LDO1 output
VIN1
GND
-
J6
GNDOSC
-
-
-
GND for RTC block
VBAT
-
-
J7
GNDREF
-
-
-
Ground for Reference Block
VBAT
-
-
J8
OUT12
A
O
T
LDO12 output
VIN2
GND
-
J9
TEST3
-
-
-
Non connect pin
(Open or connected to GND.)
VBAT
GND
-
Function
(Note6)
(Note6)
(Note 6) TEST1, TEST2, TEST3, TEST4, TEST5 and TEST6 are used for factory test mode. Please keep these pins open or connected to GND at all times.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
7/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
I/O Equivalence Circuits
Figure 3. I/O Equivalence Circuits
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
8/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Figure 4. I/O Equivalence Circuits
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
9/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
S
Q
VDDOSC
VBAT
R
VBAT
T
VBAT
OSC_IN
REFC
VIN2
VIN2
OSC_OUT
Figure 5. I/O Equivalence Circuits
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
10/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Initial Output Voltage Summary
Power
Usage Example
Supply
Initial Output Voltage
Max Load
Adjustable Range
SWREG1
CORE
PBAT1
1.20V
1.0A
±50,100mV
SWREG2
MEMORY
PBAT2
1.80V
0.5A
±50,100mV
SWREG3
ANALOG
PBAT3
1.20V
0.5A
±50,100mV
PBAT4
1.40V
0.5A
±50,100mV
PBAT5
3.20V
1.4A
±50,100mV
SWREG4
SWREG5
VIN2 power supply
(efficiency improvement)
VIN1 power supply
(efficiency improvement)
LDO1
I/O
VIN1
2.60V / 1.80V (Note 8)
300mA
±50,100mV
LDO2
USB
VBAT
3.30V
50mA
±50,100mV
LDO3
SIM I/F
VBAT
1.80V
50mA
±50,100mV
LDO4
Reserved
VIN1
2.80V
300mA
±50,100mV
LDO5
SYS PLL
VIN1
1.20V
150mA
±50,100mV
LDO6
Reserved
VIN1
2.80V
150mA
±50,100mV
LDO7
TCXO
VIN1
2.80V
50mA
±50,100mV
LDO8
2.5V R/F
VIN1
2.50V
150mA
±50,100mV
LDO9
LNA
VIN1
2.80V
150mA
±50,100mV
LDO10
HKADC
VIN1
2.80V
150mA
±50,100mV
LDO11
RX PLL
VIN2
1.20V
150mA
±50,100mV
LDO12
TX PLL
VIN2
1.20V
150mA
±50,100mV
(Note 8) Initial output voltage depends on PSET pin setting.
SWREG Output Voltage Step Table
SWREG1 SWREG2 SWREG3 SWREG4 SWREG5
1.00
1.00
1.00
1.00
1.20
1.05
1.05
1.05
1.05
1.40
1.10
1.10
1.10
1.10
1.70
1.15
1.15
1.15
1.15
1.75
1.20
1.20
1.20
1.20
1.80
1.25
1.25
1.25
1.25
1.85
1.30
1.30
1.30
1.30
1.90
1.35
1.35
1.35
3.00
Voltage step 1.35
[V]
1.40
1.40
1.40
1.40
3.05
1.45
1.45
1.45
1.45
3.10
1.50
1.50
1.50
1.50
3.15
1.70
1.70
1.70
1.70
3.20
1.75
1.75
1.75
1.75
3.25
1.80
1.80
1.80
1.80
3.30
1.85
1.85
1.85
1.85
3.35
1.90
1.90
1.90
1.90
3.40
Voltage step
[V]
LDO1
1.70
1.75
1.80
1.85
1.90
2.50
2.55
2.60
2.65
2.70
2.80
2.90
2.95
3.00
3.05
3.10
LDO2
2.55
2.60
2.65
2.75
2.80
2.85
2.90
2.95
3.00
3.05
3.10
3.20
3.25
3.30
3.35
3.40
LDO3
1.70
1.75
1.80
1.85
1.90
2.50
2.60
2.70
2.80
2.90
2.95
3.00
3.05
3.10
3.20
3.30
LDO4
1.10
1.20
1.30
1.70
1.80
1.90
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
3.00
LDO5
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.70
1.80
1.90
2.60
2.70
2.80
2.90
3.00
3.10
LDO6
1.10
1.20
1.30
1.70
1.80
1.90
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
3.00
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
LDO7
1.10
1.20
1.30
1.70
1.80
1.90
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
3.00
LDO8
1.20
1.30
1.70
1.80
2.40
2.45
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
3.00
LDO9
1.10
1.20
1.30
1.70
1.80
1.90
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
3.00
LDO10
1.10
1.20
1.30
1.70
1.80
1.90
2.50
2.55
2.60
2.65
2.70
2.75
2.80
2.85
2.90
3.00
LDO11
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
LDO12
1.00
1.05
1.10
1.15
1.20
1.25
1.30
1.35
○This product is not designed protection against radioactive rays
11/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Power On Sequence
Figure 6. Power ON sequence (Start factor is PWRON)
The short detection circuit is built in the SWREG1,2,3,4 and 5 outputs.
When the output shorted state continued more than 100ms, the all LDO and SWREG will be OFF.
If the LDO and SWREG are turned off by the external pin (EN_O7) or I2C command, the short detection circuit is not detected.
The SWREG1, 2, 3, and 4 must be used external parts when not used SWREG’s output voltage.
If it is not used the external parts in these SWREG, the short detector will detect when running the start up sequence.
(It is possible when these SWREG turn off by the I2C command after start up sequence.)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
12/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Power Off Sequence
Figure 7. Power OFF sequence
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
13/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (Current Consumption)
(Unless otherwise specified, Ta=25C, VBAT=PBAT1, 2, 3, 4, 5=VIN1=VIN2=3.6V, DVDD=VDDOSC=OUT1)
Parameter
Symbol
Min
Typ
Max
Unit
Condition
μA
All LDO=OFF
All SWREG=OFF
DVDD=0V
PWRON=L
PWRHOLD=L
μA
PWRON=H
PWRHOLD=H
LDO1,2,5=ON
SWREG1,2,5=ON
POR=H
All SWREG=PFM/PWM auto mode
All LDO,SWREG=No load
32kHz Buffer=ON
μA
PWRON=H
PWRHOLD=H
LDO1,2,3,4,5,7,8,9,10,11=ON
SWREG1,2,3,4,5=ON
POR=H
All SWREG=PFM/PWM auto mode
All LDO, SWREG=No load
μA
PWRON=H
PWRHOLD=H
LDO1,2,3,4,5,7,8,9,10,11,12=ON
SWREG1,2,3,4,5=ON
POR=H
All SWREG=PFM/PWM auto mode
All LDO, SWREG=No load
Circuit Current
VBAT
Circuit Current 1
(OFF)
VBAT
Circuit Current 2
(Sleep)
VBAT
Circuit Current 3
(RX-ONLY)
VBAT
Circuit Current 4
(LTE Link)
IQVB1
IQVB2
IQVB3
IQVB4
-
-
-
-
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
0.3
195
500
550
1.0
330
1000
1100
○This product is not designed protection against radioactive rays
14/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (Logic Interface)
(Unless otherwise specified, Ta=25C, VBAT=PBAT1, 2, 3, 4, 5=VIN1=VIN2=3.6V, DVDD=OUT1)
Parameter
Symbol
Rating
Min
Typ
Digital characteristics (Digital Pins: EN_O7, PWRON as NMOS input)
Input "H" level
1.44
VIH1
Input "L" level
V
-
0.4
V
1.5
-
MΩ
-
DVDD+0.3
V
-0.3
-
0.3×
DVDD
V
-1
0
1
μA
-
VIL1
VIL2
Unit
-
Pull Down Resistance
RPD1
Digital characteristics (Digital Pins: SCL, SDA, PWRHOLD)
0.7×
Input "H" level
VIH2
DVDD
Input "L" level
Max
Input leak current
IIC2
Digital characteristics (Digital Pins: PSET, ADRS)
VBAT+
0.3
0.3×
VBAT
Input "H" level
VIH3
0.7×
VBAT
-
Input "L" level
VIL3
-0.3
-
Input leak current
IIC3
-1
0
1
μA
-
-
0.4
0.4
V
V
Conditions
PWRON, EN_O7
V
V
Digital characteristics (Digital Pins: SDA, POR)
SDA Output “L” Level Voltage
POR Output “L” Level Voltage
VOL1
VOL2
IOL=6mA
IOL=1mA
Electrical Characteristics (32 kHz Buffer)
(Unless otherwise specified, Ta=25C, VBAT=PBAT1, 2, 3, 4, 5=VIN1=VIN2=3.6V, DVDD=VDDOSC=OUT1)
Rating
Parameter
Symbol
Unit
Conditions
Min
Typ
Max
Digital characteristics (Digital pins: C32KOUT)
VOH_
C32KOUT
0.8×
V
IO=-2mA
OUT1
32K
Output High Level
C32KOUT
Output Low Level
32.768kHz Duty
VOL_32K
-
-
0.2×
OUT1
V
DUTY
30
50
70
%
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
IO=2mA
○This product is not designed protection against radioactive rays
15/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (SWREG1)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min
Typ
Max
Unit
Condition
VOSW1
1.164
1.200
1.236
V
Initial value
Io=100mA
SWREG1
Output Voltage
Output Current
Efficiency
VOSW10
VOSW11
VOSW12
VOSW13
IOSW1
ηSW1
Oscillating Frequency
FOSC1
-
2.0
-
MHz
Vo=1.20V
(PWM mode, Io=100mA)
Output Inductance
LSWREG1
1.5
2.2
-
μH
Ta= -35 to +85C
Output Capacitance
CSWREG1
4.7
10
-
μF
Ta= -35 to +85C,
with SWREG's DC bias
Programmable
Output Voltage
+3%
V
Io=100mA
-
1.10
1.15
1.25
1.30
86
1000
-
mA
%
Io=400mA, Vo=1.20V, VBAT=3.6V
-3%
Electrical Characteristics (SWREG2)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min
Typ
Max
Unit
Condition
VOSW2
1.746
1.800
1.854
V
Initial value
Io=100mA
+3%
V
Io=100mA
500
-
mA
%
Io=200mA, Vo=1.80V, VBAT=3.6V
SWREG2
Output Voltage
Output Current
Efficiency
VOSW20
VOSW21
VOSW22
VOSW23
IOSW2
ηSW2
-
1.70
1.75
1.85
1.90
86
Oscillating Frequency
FOSC2
-
2.0
-
MHz
Vo=1.80V
(PWM mode, Io=100mA)
Output Inductance
LSWREG2
1.5
2.2
-
μH
Ta= -35 to +85C
Output Capacitance
CSWREG2
4.7
10
-
μF
Ta= -35 to +85C,
with SWREG's DC bias
Programmable
Output Voltage
-3%
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
16/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (SWREG3)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min
Typ
Max
Unit
Condition
VOSW3
1.164
1.200
1.236
V
Initial value
Io=100mA
+3%
V
Io=100mA
500
-
mA
%
Io=200mA, Vo=1.20V, VBAT=3.6V
SWREG3
Output Voltage
Output Current
Efficiency
VOSW30
VOSW31
VOSW32
VOSW33
IOSW3
ηSW3
-
1.10
1.15
1.25
1.30
86
Oscillating Frequency
FOSC3
-
2.0
-
MHz
Vo=1.20V
(PWM mode, Io=100mA)
Output Inductance
LSWREG3
1.5
2.2
-
μH
Ta= -35 to +85C
Output Capacitance
CSWREG3
4.7
10
-
μF
Ta= -35 to +85C,
with SWREG's DC bias
Programmable
Output Voltage
-3%
Electrical Characteristics (SWREG4)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min
Typ
Max
Unit
Condition
VOSW4
1.358
1.400
1.442
V
Initial value
Io=100mA
+3%
V
Io=100mA
500
-
mA
%
Io=200mA, Vo=1.40V, VBAT=3.6V
SWREG4
Output Voltage
Output Current
Efficiency
VOSW40
VOSW41
VOSW42
VOSW43
IOSW4
ηSW4
-
1.50
1.45
1.35
1.30
87
Oscillating Frequency
FOSC4
-
2.0
-
MHz
Vo=1.40V
(PWM mode, Io=100mA)
Output Inductance
LSWREG4
1.5
2.2
-
μH
Ta= -35 to +85C
Output Capacitance
CSWREG4
4.7
10
-
μF
Ta= -35 to +85C,
with SWREG's DC bias
Programmable
Output Voltage
-3%
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
17/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (SWREG5)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min
Typ
Max
Unit
Condition
VOSW5
3.104
3.200
3.296
V
Initial value
Io=100mA
SWREG5
Output Voltage
Output Current
Efficiency
VOSW50
VOSW51
VOSW52
VOSW53
IOSW5
ηSW5
Oscillating Frequency
FOSC5
-
2.0
-
MHz
Vo=3.20V
(PWM mode, Io=100mA)
Output Inductance
LSWREG5
1.5
2.2
-
μH
Ta= -35 to +85C
Output Capacitance
CSWREG5
4.7
10
-
μF
Ta= -35 to +85C,
with SWREG's DC bias
Programmable
Output Voltage
+3%
V
Io=100mA
-
3.300
3.250
3.150
3.100
92
1400
-
mA
%
Io=400mA, Vo=3.20V, VBAT=3.6V
-3%
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
18/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO1)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Output Voltage A
VOM1A0
2.548
2.600
2.652
V
Output Voltage B
VOM1B0
1.764
1.800
1.836
V
Output Current
VOM1C
-
-
300
mA
Dropout Voltage
VOM1DP
-
0.05
-
V
Input Voltage Stability
Load Stability
ΔVIM1
ΔVLM1
VOM1A1
VOM1A2
VOM1A3
VOM1A4
VOM1B1
VOM1B2
VOM1B3
VOM1B4
-
2
20
2.70
2.65
2.55
2.50
1.90
1.85
1.75
1.70
-
mV
mV
Io=50mA
VIN1=2.7V(Vo=3.1V setting)
VIN1=3V to 4.5V, Io=50mA
Io=1mA ~ 300mA
+2%
V
Io=50mA
+2%
V
Io=50mA
-
ohm
LDO1
Programmable Output
Voltage A
Programmable Output
Voltage B
Discharge
Resistance
RDCHG1
-2%
-2%
-
100
Ripple Rejection Ratio
RRM1
-
60
-
dB
Output Capacitor
COUT1
0.47
1.0
-
μF
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
Initial setting, PSET=H
Io=50mA
Initial setting, PSET=L
Io=50mA
VBAT=4.2V+0.2Vpp
fR=120Hz
Io=50mA, Vo=2.60V
BW=20Hz to 20kHz
Ta=-35 to +85C, with LDO's DC
bias
○This product is not designed protection against radioactive rays
19/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO2)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LDO2
Output Voltage
VOM20
3.234
3.300
3.366
V
Io=50mA
Output Current
VOM2C
-
-
50
mA
Dropout Voltage
VOM2DP
-
0.05
-
V
Input Voltage Stability
Load Stability
ΔVIM2
ΔVLM2
VOM21
VOM22
VOM23
VOM24
-
2
20
3.40
3.35
3.25
3.20
-
mV
mV
Io=50mA
VBAT=2.8V(Vo=3.4V setting)
VBAT=3.6V to 4.5V, Io=50mA
Io=1mA ~ 50mA
+2%
V
Io=50mA
-
ohm
Programmable Output
Voltage
Discharge
Resistance
RDCHG2
-2%
-
100
Ripple Rejection Ratio
RRM2
-
60
-
dB
Output Capacitor
COUT2
0.47
1.0
-
μF
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
VBAT=4.2V+0.2Vpp
fR=120Hz
Io=50mA, Vo=3.3V
BW=20Hz to 20kHz
Ta=-35 to +85C, with LDO's DC
bias
○This product is not designed protection against radioactive rays
20/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO3)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LDO3
Output Voltage
VOM30
1.764
1.800
1.836
V
Io=50mA
Output Current
VOM3C
-
-
50
mA
Dropout Voltage
VOM3DP
-
0.05
-
V
Input Voltage Stability
Load Stability
ΔVIM3
ΔVLM3
VOM31
VOM32
VOM33
VOM34
-
2
20
1.90
1.85
1.75
1.70
-
mV
mV
Io=50mA
VBAT=2.8V(Vo=3.3V setting)
VBAT=3.3V to 4.5V, Io=50mA
Io=1mA ~ 50mA
+2%
V
Io=50mA
-
ohm
Programmable Output
Voltage B
Discharge
Resistance
RDCHG3
-2%
-
100
Ripple Rejection Ratio
RRM3
-
60
-
dB
VBAT=4.2V+0.2Vpp
fR=120Hz
Io=50mA, Vo=3.0V
BW=20Hz to 20kHz
Output Capacitor
COUT3
0.47
1.0
-
μF
Ta=-35 to +85C, with
LDO's DC bias
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
21/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO4)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LDO4
Output Voltage
VOM40
2.744
2.800
2.856
V
Io=50mA
Output Current
VOM4C
-
-
300
mA
Dropout Voltage
VOM4DP
-
0.05
-
V
Input Voltage Stability
Load Stability
ΔVIM4
ΔVLM4
VOM41
VOM42
VOM43
VOM44
-
2
20
2.90
2.85
2.75
2.70
-
mV
mV
Io=50mA
VIN1=2.7V(Vo=3.0V setting)
VBAT=3.2V to 4.5V, Io=50mA
Io=1mA ~ 300mA
+2%
V
Io=50mA
-
ohm
Programmable Output
Voltage
Discharge
Resistance
RDCHG4
-2%
-
100
Ripple Rejection Ratio
RRM4
-
60
-
dB
Output Capacitor
COUT4
0.47
1.0
-
μF
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
VBAT=4.2V+0.2Vpp
fR=120Hz
Io=50mA, Vo=2.80V
BW=20Hz to 20kHz
Ta=-35 to +85C, with
LDO's DC bias
○This product is not designed protection against radioactive rays
22/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO5)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LDO5
Output Voltage
VOM50
1.176
1.200
1.224
V
Io=50mA
Output Current
VOM5C
-
-
150
mA
Dropout Voltage
VOM5DP
-
0.05
-
V
Input Voltage Stability
Load Stability
ΔVIM5
ΔVLM5
VOM51
VOM52
VOM53
VOM54
-
2
20
1.30
1.25
1.15
1.10
-
mV
mV
Io=50mA
VIN1=2.7V(Vo=3.1V setting)
VIN1=3.0V to 4.5V, Io=50mA
Io=1mA ~ 150mA
+2%
V
Io=50mA
-
ohm
Programmable Output
Voltage
Discharge
Resistance
RDCHG5
-2%
-
100
Ripple Rejection Ratio
RRM5
-
60
-
dB
Output Noise Level
VON5
-
60
-
μVrms
Output Capacitor
COUT5
0.47
1.0
-
μF
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
VBAT=4.2V+0.2Vpp
fR=10kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Ta=-35 to +85C, with
LDO's DC bias
○This product is not designed protection against radioactive rays
23/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO6)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
●LDO6
Output Voltage
VOM60
2.744
2.800
2.856
V
Io=50mA
Output Current
VOM6C
-
-
150
mA
Dropout Voltage
VOM6DP
-
0.05
-
V
Input Voltage Stability
Load Stability
ΔVIM6
ΔVLM6
-
2
20
-
mV
mV
Io=50mA
VIN1=2.7V(Vo=3.0V setting)
VIN1=3.2~4.5V, Io=50mA
Io=1mA ~ 150mA
+2%
V
Io=50mA
-
ohm
VOM61
Programmable Output
Voltage
VOM62
VOM63
2.90
-2%
VOM64
Discharge
Resistance
RDCHG6
2.85
2.75
2.70
-
100
Ripple Rejection Ratio
RRM6
-
60
-
dB
Output Noise Level
VON6
-
60
-
μVrms
Output Capacitor
COUT6
0.47
1.0
-
μF
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
VBAT=4.2V+0.2Vpp
fR=10kHz
Io=50mA, Vo=1.20V
BW=20Hz～20kHz
Io=50mA, Vo=1.20V
BW=20Hz～20kHz
Ta=-35～85C, with LDO's DC
bias
○This product is not designed protection against radioactive rays
24/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO7)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LDO7
Output Voltage
VOM70
2.744
2.800
2.856
V
Io=50mA
Output Current
VOM7C
-
-
50
mA
Dropout Voltage
VOM7DP
-
0.05
-
V
Input Voltage Stability
Load Stability
ΔVIM7
ΔVLM7
VOM71
VOM72
VOM73
VOM74
-
2
20
2.90
2.85
2.75
2.70
-
mV
mV
Io=50mA
VIN1=2.7V(Vo=3.0V setting)
VIN1=3.2V to 4.5V, Io=50mA
Io=1mA ~ 50mA
+2%
V
Io=50mA
-
ohm
Programmable Output
Voltage
Discharge
Resistance
RDCHG7
-2%
-
100
Ripple Rejection Ratio
RRM7
-
60
-
dB
Output Noise Level
VON7
-
60
-
μVrms
Output Capacitor
COUT7
0.47
1.0
-
μF
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
VBAT=4.2V+0.2Vpp
fR=10kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Ta=-35 to +85C, with
LDO's DC bias
○This product is not designed protection against radioactive rays
25/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO8)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LDO8
Output Voltage
VOM80
2.45
2.50
2.55
V
Io=50mA
Output Current
VOM8C
-
-
150
mA
Dropout Voltage
VOM8DP
-
0.05
-
V
Input Voltage Stability
Load Stability
ΔVIM8
ΔVLM8
VOM81
VOM82
VOM83
VOM84
-
2
20
2.60
2.55
2.45
2.40
-
mV
mV
Io=50mA
VIN1=2.7V(Vo=3.0V setting)
VIN1=3.0V to 4.5V, Io=50mA
Io=1mA to 150mA
+2%
V
Io=50mA
-
ohm
Programmable Output
Voltage
Discharge
Resistance
RDCHG8
-2%
-
100
Ripple Rejection Ratio
RRM8
-
60
-
dB
Output Noise Level
VON8
-
60
-
μVrms
Output Capacitor
COUT8
0.47
1.0
-
μF
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
VBAT=4.2V+0.2Vpp
fR=10kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Ta=-35 to +85C, with
LDO's DC bias
○This product is not designed protection against radioactive rays
26/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO9)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LDO9
Output Voltage
VOM90
2.744
2.800
2.856
V
Io=50mA
Output Current
VOM9C
-
-
150
mA
Dropout Voltage
VOM9DP
-
0.05
-
V
Input Voltage Stability
Load Stability
ΔVIM9
ΔVLM9
VOM91
VOM92
VOM93
VOM94
-
2
20
2.90
2.85
2.75
2.70
-
mV
mV
Io=50mA
VIN1=2.7V(Vo=3.0V setting)
VIN1=3.2V to 4.5V, Io=50mA
Io=1mA ~ 150mA
+2%
V
Io=50mA
-
ohm
Programmable Output
Voltage
Discharge
Resistance
RDCHG9
-2%
-
100
Ripple Rejection Ratio
RRM9
-
60
-
dB
Output Noise Level
VON9
-
60
-
μVrms
Output Capacitor
COUT9
0.47
1.0
-
μF
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
VBAT=4.2V+0.2Vpp
fR=10kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Ta=-35 to +85C, with
LDO's DC bias
○This product is not designed protection against radioactive rays
27/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO10)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LDO10
Output Voltage
VOM100
2.744
2.800
2.856
V
Io=50mA
Output Current
VOM10C
-
-
150
mA
Dropout Voltage
VOM10DP
-
0.05
-
V
Input Voltage Stability
Load Stability
ΔVIM10
ΔVLM10
VOM101
VOM102
VOM103
VOM104
-
2
20
2.90
2.85
2.75
2.70
-
mV
mV
Io=50mA
VIN1=2.7V(Vo=3.0V setting)
VIN1=3.2V to 4.5V, Io=50mA
Io=1mA ~ 150mA
+2%
V
Io=50mA
-
ohm
Programmable Output
Voltage
Discharge
Resistance
RDCHG10
-2%
-
100
Ripple Rejection Ratio
RRM10
-
60
-
dB
Output Noise Level
VON10
-
60
-
μVrms
Output Capacitor
COUT10
0.47
1.0
-
μF
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
VBAT=4.2V+0.2Vpp
fR=10kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Ta=-35 to +85C, with
LDO's DC bias
○This product is not designed protection against radioactive rays
28/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO11)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LDO11
Output Voltage
VOM110
1.176
1.200
1.224
V
Io=50mA
Output Current
VOM11C
-
-
150
mA
Dropout Voltage
VOM11DP
-
0.03
-
V
Input Voltage Stability
Load Stability
ΔVIM11
ΔVLM11
VOM111
VOM112
VOM113
VOM114
-
2
20
1.30
1.25
1.15
1.10
-
mV
mV
Io=50mA
VIN2=1.2V(Vo=1.2V setting)
VBAT=3.2V to 4.5V, Io=50mA
Io=1mA ~ 150mA
+2%
V
Io=50mA
-
ohm
Programmable Output
Voltage
Discharge
Resistance
RDCHG11
-2%
-
100
Ripple Rejection Ratio
RRM11
-
70
-
dB
Output Noise Level
VON11
-
60
-
μVrms
Output Capacitor
COUT11
1.0
2.2
-
μF
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
VBAT=4.2V+0.2Vpp
fR=10kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Ta=-35 to +85C, with
LDO's DC bias
○This product is not designed protection against radioactive rays
29/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (LDO12)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
LDO12
Output Voltage
VOM120
1.176
1.200
1.224
V
Io=50mA
Output Current
VOM12C
-
-
150
mA
Dropout Voltage
VOM12DP
-
0.03
-
V
Input Voltage Stability
Load Stability
ΔVIM12
ΔVLM12
VOM121
VOM122
VOM123
VOM124
-
2
20
1.30
1.25
1.15
1.10
-
mV
mV
Io=50mA
VIN2=1.2V(Vo=1.2V setting)
VBAT=3.2V to 4.5V, Io=50mA
Io=1mA ~ 150mA
+2%
V
Io=50mA
-
ohm
Programmable Output
Voltage
Discharge
Resistance
RDCHG12
-2%
-
100
Ripple Rejection Ratio
RRM12
-
70
-
dB
Output Noise Level
VON12
-
60
-
μVrms
Output Capacitor
COUT12
1.0
2.2
-
μF
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
VBAT=4.2V+0.2Vpp
fR=10kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Io=50mA, Vo=1.20V
BW=20Hz to 20kHz
Ta=-35 to +85C, with
LDO's DC bias
○This product is not designed protection against radioactive rays
30/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (SIMCARD interface)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V (FB5), VIN2=1.4V (FB4), DVDD=OUT1)
Parameter
Symbol
SPEC
Min
Typ
Max
Unit
Condition
Digital Characteristics (Digital pin: SIMRSTIN)
Input H Level
VIHURST
0.7*OUT1
-
-
V
Input L Level
VILURST
-
-
0.2*OUT1
V
Digital Characteristics (Digital pin: SIMCLKIN)
Input H Level
VIHUCLK
0.7*OUT1
-
-
V
Input L Level
VILUCLK
-
-
0.2*OUT1
V
MAX Clock Frequency
FSIMMAX
-
-
20
MHz
Digital Characteristics (Digital pin: SIMIODBB)
Pull-up Resistor
RPUSIM
13
20
28
kΩ
Input H Level
VIHUDBB
OUT1-0.6
-
-
V
(Note 9)
Input L Level
VILUDBB
-
-
0.3
V
(Note 10)
Input H Current
LINHSIM
-
-
20
µA
SIMIODBB=OUT1
Input L Current
LINLSIM
-
-
1
mA
SIMIODBB=0.3V
SIMIO=OPEN
Output H Level
VOHUDBB
0.7*OUT1
-
-
V
IO=20µ A
Output L Level
VOLUDBB
-
-
0.4
V
IIN=200µA, SIMIO=0V
Timing Parameter (Cout=30pF, LDO1=LDO3=1.8V)
SIMRSTOUT
Rise/Fall Time
SIMCLKOUT
Rise/Fall Time
SIMIO
Rise/Fall Time
SIMIODBB
Rise/Fall Time
(Note 11)
TIMRST
-
-
18
nsec
TIMCLK
-
-
18
nsec
TIMIO
-
-
1.0
µsec
TIMIODB
-
-
1.2
µsec
(Note 9) Input H level is defined as the voltage at which the output (SIMIODBB/SIMIO) voltage equals 0.5V
(Note 10) Input L level is defined as the voltage at which the output (SIMIODBB/SIMIO) voltage exceeds the input (SIMIO/SIMIODBB) voltage by 100mV.
(Note 11) Timing Parameter specifications are guaranteed by design, but were not production tested.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
31/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (SIMCARD Interface)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V (FB5), VIN2=1.4V (FB4), DVDD=OUT1)
Parameter
SPEC
Symbol
Min
Typ
Max
Unit
Condition
Digital Characteristics (Digital pin: SIMRSTOUT)
Output H Level
VOHURSTOUT
0.8*OUT3
-
-
V
IO=200μA
Output L Level
VOLURSTOUT
-
-
0.4
V
IIN=200μA
Digital Characteristics (Digital pin: SIMCLKOUT)
Output H Level
VOHUCLKOUT
0.8*OUT3
-
-
V
IO=200μA
Output L Level
VOLUCLKOUT
-
-
0.4
V
IIN=200μA
RPUIO
6.5
10
14
kΩ
Input H Level
VIHUIMIO
0.7*OUT3
-
-
V
(Note 9)
Input L Level
VILUIMIO
0
-
0.3
V
(Note 10)
Input H Current
LINHIO
-
-
20
µA
SIMIO = OUT3
Input L Current
LINLIO
-
-
1
mA
SIMIO = 0.3V
Output H Level
VOHUIMIO
0.8*OUT3
-
-
V
IO=20μA
Output L Level
VOLUIMIO
-
-
0.4
V
IIN=200μA, SIMIODBB=0V
Digital Characteristics (Digital pin: SIMIO)
Pull-up Resistor
(Note 9) Input H level is defined as the voltage at which the output (SIMIODBB/SIMIO) voltage equals 0.5V
(Note 10) Input L level is defined as the voltage at which the output (SIMIODBB/SIMIO) voltage exceeds the input (SIMIO/SIMIODBB) voltage by 100mV.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
32/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (4ch Analog SW)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1)
SPEC
Parameter
Symbol
Unit
Condition
Min
Typ
Max
4ch Analog SW Input Selector
Input Range
VINSW
0
2.2
V
ASWIN1
ASWIN2
ASWIN3
IINSW
1
µA
ASWIN4
Input leak current when OFF
or not selected
Between
ASWIN1
ASWIN2
ASWIN3
ANASW_EN=’1’
RONSW
100
200
Ω
ASWIN4
VINSW=1.0V
and ASWOUT
ON resistance when
selected
Electrical Characteristics (CLOCK DRIVER)
(Unless otherwise specified, Ta=25C, VBAT=PBAT*=3.6V, VIN1=3.2V(FB5), VIN2=1.4V(FB4), DVDD=OUT1, VDDTCXO=OUT7)
Parameter
CLOCK DRIVER
TCXO_IN Input
Frequency 1
TCXO_IN Input
Frequency 2
TCXO_IN Input Range
TCXO_OUT Output
Frequency1
TCXO_OUT Output
Frequency 2
Output Pulse Width 1
Output Pulse Width 2
Output Rise Time
Output Fall Time
Symbol
Min
Typ
Max
Unit
FTHRU1
-
19.2
-
MHz
FTHRU2
-
26.0
-
MHz
VPPCD
0.6
-
1.2
Vpp
FOUT1
18.2
19.2
20.2
MHz
FOUT2
25.0
26.0
27.0
MHz
TLWCD1
20
20
13
13
-
-
6
6
ns
ns
ns
ns
ns
ns
THWCD1
TLWCD2
THWCD2
TRCD
TFCD
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
Condition
Low level CL=10pF
High level CL=10pF
Low level CL=10pF
High level CL=10pF
Tr CL=10pF
Tf CL=10pF
○This product is not designed protection against radioactive rays
33/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Electrical Characteristics (I2C AC Characteristics)
Characteristics
Symbol
Min
Max
Unit
CLK Clock Frequency
fCLK
0
400
kHz
CLK Clock “LOW” Time
tLOW
1.3
-
μs
CLK Clock “HIGH” Time
tHIGH
0.6
-
μs
Bus Free Time
tBUF
1.3
-
μs
Start Condition Hold Time
tHD.STA
0.6
-
μs
Start Condition Setup Time
tSU.STA
0.6
-
μs
Data Input Hold Time
tHD.DAT
0
-
ns
Data Input Setup Time
tSU.DAT
100
-
ns
Stop Condition Setup Time
tSU.STO
0.6
-
μs
tF
tHIGH
tLOW
tR
CLK
tSU.STA tHD.STA
tSU.STO
tHD.DAT tSU.DAT
DATA
(INPUT)
tBUF
Figure 8. Bus Timing 1
CLK
DATA
(INPUT)
DO
tWR
Write
data
input
Acknowledg
e output
Start
condition
Stop
condition
Figure. 9 Bus Timing 2
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
34/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
I2C Bus Interface
The I2C-compatible synchronous serial interface provides access to programmable functions and registers on the device.
This protocol uses a two-wire interface for bi-directional communication between the LSI’s connected to the bus.
The two interface lines are the Serial Data Line(DATA), and the Serial Clock Line(CLK). These lines should be connected
to the power supply DVDD by a pull-up resistor, and remain high even when the bus is idle.
1. Start and Stop Conditions
When CLK is high, pulling DATA low produces a start condition and pulling DATA high produces a stop condition. Every
instruction is started when a start condition occurs and terminated when a stop condition occurs.
During read, a stop condition causes read to terminate and the chip enters the standby state.
During write, a stop condition causes the fetching of write data to terminate, after which writing starts automatically.
When writing is completed, the chip enters the standby state.
Two or more start conditions cannot be entered consecutively.
tSU.STA tHD.STA
tSU.STO
CLK
DATA
Start
condition
Stop condition
Figure. 10. Start and Stop Conditions
2. Modifying Data
Data on the DATA input can be modified while CLK is low. When CLK is high, modification of the DATA input is interpreted
as a start or stop condition.
tSU.DAT
tHD.DAT
CLK
DATA
Modify data
Modify data
Figure 11. Modifying Data
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
35/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
3. Acknowledge
Data is transmitted and received in 8-bit units. The receiver sends an acknowledge signal by outputting a low on DATA in
the 9th clock cycle, indicating that it has received data normally. The transmitter releases the bus in the 9th clock cycle to
receive an acknowledge signal.
During write, the chip is always the receiver so that it outputs an acknowledge signal each time it has received eight bits of
data.
During read, the chip outputs an acknowledge signal after it receives an address following a start condition. Then, it outputs
read data and releases the bus to wait for an acknowledge signal from the master. When it detects an acknowledge signal,
it outputs data at the next address if it does not detect a stop condition. If the chip does not detect an acknowledge signal, it
stops read operation, and subsequently enters the standby state when a stop condition occurs.
If the chip does not detect an acknowledge signal nor a stop condition, it keeps the bus released.
1
CLK
9
8
DATA
DATA
Start condition
Acknowledge output
Figure 12. Acknowledge
4. Device Addressing
After a start condition occurs, a 7-bit device address and a 1-bit read/write instruction code are input into the chip
The upper seven bits are called the device address, which must always be “1001011” (ADRS=L) or “1001100” (ADRS=H).
(R/W : READ/WRITE)
indicates a read instruction when set to 1 and a write instruction when
The least significant bit
set to 0.
An instruction is not executed if the device address does not match the specified value.
Read/write instruction
code
Device address
1
0
0
1
0
MSB
1
1
R/W
LSB
Figure 13. Device Addressing (Device address is “ 1001011” or "1001100".)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
36/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
5. Write operation
In order to write to a specified address, input a device address, R/W(=0), a word address, and write data after a start
condition.
When a stop condition is entered, the chip automatically enters standby state.
Address increment is acknowledged only whenever INC bit is ‘0’.
S
T
A
R
T
D A TA LIN E
W
R
I
T
E
D E V IC E
AD D R E S S
WORD
AD D R E SS
L R A
C
S
B WK
M
S
B
W R IT E
D AT A
W WW W W W W
0 6 5 4 3 2 1 0
x x x x x x x 0
D D D D D D D D
7 6 5 4 3 2 1 0
A
C
K
AD D R E S S
increment
L A
S C
B K
I M
NS
C B
S
T
O
P
Figure 14. Write Operation
S
T
A
R
T
DATA LINE
DEVICE
ADDRES
S
W
R
I
T
E
x x x x x x x 0
M
S
B
WORD
ADDRESS(n)
WRITE
DATA(n)
D D D D D D D D
7 6 5 4 3 2 1 0
W WW W W W W
0 6 5 4 3 2 1 0
L R A I
C N
S
B WK C
A
C
K
WRITE
DATA(n+m)
WRITE
DATA(n+1)
D D D D D D D D
7 6 5 4 3 2 1 0
A
C
K
ADDRESS
increment
S
T
O
P
D D D D D D
5 4 3 2 1 0
A
C
K
ADDRESS
increment
A
C
K
ADDRESS
increment
Figure 15. Address Increment ON
S
T
A
R
T
DATA LINE
DEVICE
ADDRESS
W
R
I
T
E
x x x x x x x 0
M
S
B
WORD
ADDRESS(n)
WRITE
DATA(n)
WRITE
DATA(n)
W WW W W W W
1 6 5 4 3 2 1 0
D D D D D D D D
7 6 5 4 3 2 1 0
D D D D D D D D
7 6 5 4 3 2 1 0
L R A I
C N
S
B WK C
A
C
K
A
C
K
S
T
O
P
WRITE
DATA(n)
D D D D D D
5 4 3 2 1 0
A
C
K
A
C
K
Figure 16. Address Increment OFF
The rollover function of the LSI can be accessed when address increment is ON.
Input a device address, R / W 0 , a word address n , and write data n after a start condition, in the same way as
for a write byte. Input write data n 1 immediately afterwards, without entering a stop condition, and while checking
that the acknowledge signal is asserted 0 .
When the last address (14H) is reached, the word address is rolled over to the first address (00H) of the page..
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
37/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Write operation example (Auto Increment OFF)
(Write to Address 00h, Data 32h)
When writing to a single address, follow the sequence below.
START => DEVICE ADDRESS+WRITE => WORD ADDRESS => DATA => STOP
At this time, the Auto increment bit (=INC) can be either ‘H’ or ‘L’.
START
STOP
CLK
1
1
1
Device Address = "1001111"
0
0
0
0
0
0
0
0
0
1
Word Address = "0000000"
1
0
0
1
ACK=OK
1
ACK=OK
0
INC=OFF
0
ACK=OK
1
WRITE
DATA
0
Data = "00110010"
Figure 17. Write Operation Example (Auto Increment OFF)
Write operation example (Auto Increment ON)
(Write to Address 01h, Data 04h;
Address 02h, Data A0h;
Address 03h, Data 6Eh;
Address 04h, Data 0Fh)
When writing to multiple addresses follow the sequence below.
START => DEVICE ADDRESS+WRITE => WORD ADDRESS => DATA => DATA => DATA => DATA => STOP
At this time, the Auto increment bit (=INC) needs to be ‘L’.
When writing the Word address, write the first address from which you want to start writing.
ACK=OK
ACK=OK
INC=ON
ACK=OK
WRITE
ACK=OK
ACK=OK
ACK=OK
Figure 18. Write Operation Example (Auto Increment ON)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
38/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Read operation example (Auto Increment ON)
(Read from Address 01h, 02h, 03h, 04h, 05h)
To read from Address 01h, you must first dummy write to Address 01h.
At this time, the Auto increment bit (=INC) needs to be ‘L’.
When finished reading, you must end by returning an ACK=NG(‘H’), and then stop.
The read sequence would be as shown below.
START => DEVICE ADDRESS+WRITE => WORD ADDRESS => STOP => START => DEVICE ADDRESS+READ =>
DATA READ + ACK OK => DATA READ + ACK OK => DATA READ + ACK OK => DATA READ + ACK OK =>
DATA READ + ACK NG => STOP
ACK=OK
INC=ON
ACK=OK
WRITE
ACK=OK
ACK=OK
ACK=OK
READ
ACK=NG
ACK=OK
ACK=OK
Figure 19. Read Operation Example (Auto Increment ON)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
39/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Register Map (LDO and SWREG control)
Address
Register name
R/W
INIT
D7
D6
D5
D4
D3
D2
D1
D0
00h
LDOCNT1
R/W
1Bh
LDO8ON
LDO7ON
LDO6ON
LDO5ON
LDO4ON
LDO3ON
LDO2ON
LDO1ON
01h
LDOCNT2
R/W
00h
-
-
-
-
LDO12ON
LDO11ON
LDO10ON
LDO9ON
02h
SWREGCNT
R/W
13h
-
-
-
SWREG5ON
SWREG4ON
SWREG3ON
SWREG2ON
SWREG1ON
DXh
03h
LDOADJ1
R/W
LDO2ADJ [3:0]
LDO1ADJ [3:0]
04h
LDOADJ2
R/W
C2h
LDO4ADJ [3:0]
LDO3ADJ [3:0]
05h
LDOADJ3
R/W
C4h
LDO6ADJ [3:0]
LDO5ADJ [3:0]
06h
LDOADJ4
R/W
6Ch
LDO8ADJ [3:0]
LDO7ADJ [3:0]
07h
LDOADJ5
R/W
CCh
LDO10ADJ [3:0]
LDO9ADJ [3:0]
(Note12)
08h
LDOADJ6
R/W
44h
09h
SWREGADJ1
R/W
D4h
-
SWREG2ADJ [3:0]
LDO12ADJ [2:0]
-
SWREG1ADJ [3:0]
LDO11ADJ [2:0]
0Ah
SWREGADJ2
R/W
84h
SWREG4ADJ [3:0]
SWREG3ADJ [3:0]
0Bh
SWREGADJ3
R/W
0Bh
-
-
-
-
0Ch
ENLD_DIS
R/W
00h
-
-
-
-
-
-
SWREG5ADJ [3:0]
-
ENLD7_DIS
0Dh
LDOPD1_DIS
R/W
00h
LDO8PD_DIS
LDO7PD_DIS
LDO6PD_DIS
LDO5PD_DIS
LDO4PD_DIS
LDO3PD_DIS
LDO2PD_DIS
LDO1PD_DIS
LDO11PD_
DIS
SWREG3PD
_DIS
LDO10PD_
DIS
SWREG2PD
_DIS
SWREG1PD_
DIS
0Eh
LDOPD2_DIS
R/W
00h
-
-
-
-
0Fh
SWREGPD_
DIS
R/W
00h
-
-
-
SWREG5PD_
DIS
LDO12PD_
DIS
SWREG4PD
_DIS
10h
ANASW_CNT
R/W
00h
-
-
-
-
-
ANASW_EN
11h
TCXO_CNT
R/W
50h
-
-
-
12h
OSC_CNT
R/W
03h
-
-
-
-
-
SWREG4
PWM
SWREG3
PWM
-
TCXO_MASK 2:0]
-
13h
SWREGPWM
R/W
00h
-
-
-
SWREG5
PWM
14h
SW5BYPASS
R/W
01h
-
reserved
Reserved
(Note13)
(Note13)
BYPASS_DIS
LDO9PD_DIS
ANASW_SEL[1:0]
TCXO_EN
TCXO_SEL
C32KOUT_
EN
SWREG2
PWM
SWREG1
PWM
OSC_EN
VINDET5ADJ[2:0]
(Note 12) The initial value is determined by PSET pin condition.
(Note 13) Please always write “0” to reserved registers when in use.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
40/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 00h : LDOCNT1 Register (Read/Write)
Address
(Index)
Register Name
R/W
00h
LDOCNT1
R/W
Initial
Value
1Bh
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
LDO8ON LDO7ON LDO6ON LDO5ON LDO4ON LDO3ON LDO2ON LDO1ON
0
0
0
1
1
0
1
1
LDO7 is controlled by EN_O7 pin by deafult.
Bit0:
LDO1ON LDO1 Power ON/OFF control
“0”： OFF
“1”： ON (Initial state)
Bit1:
LDO2ON LDO2 Power ON/OFF control
“0”： OFF
“1”： ON (Initial state)
Bit2:
LDO3ON LDO3 Power ON/OFF control
“0”： OFF (Initial state)
“1”： ON
Bit3:
LDO4ON LDO4 Power ON/OFF control
“0”： OFF
“1”： ON (Initial state)
Bit4:
LDO5ON LDO5 Power ON/OFF control
“0”： OFF
“1”： ON (Initial state)
Bit5:
LDO6ON LDO6 Power ON/OFF control
“0”： OFF (Initial state)
“1”： ON
Bit6:
LDO7ON LDO7 Power ON/OFF control
“0”： OFF (Initial state)
“1”： ON
LDO7 is controllable by this register only when ENLD7_DIS register (addr 0Ch D[0]) = ‘1’.
Bit7:
LDO8ON LDO8 Power ON/OFF control
“0”： OFF (Initial state)
“1”： ON
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
41/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 01h : LDOCNT2 Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
Bit6
Bit5
Bit4
01h
LDOCNT2
R/W
-
-
-
-
00h
0
0
0
0
Initial
Value
Bit0:
LDO9ON LDO9 Power ON/OFF control
“0”： OFF (Initial state)
“1”： ON
Bit1:
LDO10ON LDO10 Power ON/OFF control
“0”： OFF (Initial state)
“1”： ON
Bit2:
LDO11ON LDO11 Power ON/OFF control
“0”： OFF (Initial state)
“1”： ON
Bit3:
LDO12ON LDO12 Power ON/OFF control
“0”： OFF (Initial state)
“1”： ON
Bit3
Bit2
Bit1
Bit0
LDO12ON LDO11ON LDO10ON LDO9ON
0
0
0
0
Whenever SWREG4 is used to power LDO11 and LDO12 via VIN2, SWREG4 must be turned ON at least 250µs
before LDO11 and LDO12 are turned ON.
SWREG4=ON
Wait for 250us or more
LDO11, 12=ON
An opposite sequence is followed for turning LDO11 and LDO12 OFF. LDO11 and LDO12 must be turned OFF
before turning OFF SWREG4.
LDO11, 12=OFF
No wait needed
SWREG4=OFF
Whenever SWREG4 is used to power LDO11 and LDO12 via VIN2, SWREG4 must be turned ON at least 250µs
before LDO11 and LDO12 are turned ON.
SWREG4=ON
Wait for 250us or more
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
42/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 02h : SWREGCNT Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
Bit6
Bit5
02h
SWREGCNT
R/W
-
-
-
13h
0
0
0
Initial
Value
Bit4
Bit2
Bit1
Bit0
SWREG5 SWREG4 SWREG3 SWREG2 SWREG1
ON
ON
ON
ON
ON
Bit0:
SWREG1ON SWREG1 Power ON/OFF control
“0”： OFF
“1”： ON (Initial state)
Bit1:
SWREG2ON SWREG2 Power ON/OFF control
“0”： OFF
“1”： ON (Initial state)
Bit2:
SWREG3ON SWREG3 Power ON/OFF control
“0”： OFF (Initial state)
“1”： ON
Bit3:
SWREG4ON SWREG4 Power ON/OFF control
“0”： OFF (Initial state)
“1”： ON
Bit4:
SWREG5ON SWREG5 Power ON/OFF control
“0”： OFF
“1”： ON (Initial state)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
Bit3
1
0
0
1
1
○This product is not designed protection against radioactive rays
43/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 03h : LDOADJ1 Register (Read/Write)
Address
(Index)
Register Name
R/W
03h
LDOADJ1
R/W
Initial
Value
DXh
Bit7
Bit6
Bit5
Bit4
Bit3
LDO2ADJ[3:0]
1
1
0
Bit2
Bit1
Bit0
LDO1ADJ[3:0]
1
X
X
X
X
Bit[3:0]: LDO1ADJ[3:0] LDO1 output voltage control
“0000”： 1.70V
“0001”： 1.75V
“0010”： 1.80V (Initial state when PSET=’L’)
“0011”： 1.85V
“0100”： 1.90V
“0101”： 2.50V
“0110”： 2.55V
“0111”： 2.60V (Initial state when PSET=’H’)
“1000”： 2.65V
“1001”： 2.70V
“1010”： 2.80V
“1011”： 2.90V
“1100”： 2.95V
“1101”： 3.00V
“1110”： 3.05V
“1111”： 3.10V
Bit[7:4]: LDO2ADJ[3:0] LDO2 output voltage control
“0000”： 2.55V
“0001”： 2.60V
“0010”： 2.65V
“0011”： 2.75V
“0100”： 2.80V
“0101”： 2.85V
“0110”： 2.90V
“0111”： 2.95V
“1000”： 3.00V
“1001”： 3.05V
“1010”： 3.10V
“1011”： 3.20V
“1100”： 3.25V
“1101”： 3.30V (Initial state)
“1110”： 3.35V
“1111”： 3.40V
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
44/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 04h : LDOADJ2 Register (Read/Write)
Address
(Index)
Register Name
R/W
04h
LDOADJ2
R/W
Initial
Value
C2h
Bit7
Bit6
Bit5
Bit4
Bit3
LDO4ADJ[3:0]
1
1
0
Bit2
Bit1
Bit0
LDO3ADJ[3:0]
0
0
0
1
0
Bit[3:0]: LDO3ADJ[3:0] LDO3 output voltage control
“0000”： 1.70V
“0001”： 1.75V
“0010”： 1.80V (Initial state)
“0011”： 1.85V
“0100”： 1.90V
“0101”： 2.50V
“0110”： 2.60V
“0111”： 2.70V
“1000”： 2.80V
“1001”： 2.90V
“1010”： 2.95V
“1011”： 3.00V
“1100”： 3.05V
“1101”： 3.10V
“1110”： 3.20V
“1111”： 3.30V
Bit[7:4]: LDO4ADJ[3:0] LDO4 output voltage control
“0000”： 1.10V
“0001”： 1.20V
“0010”： 1.30V
“0011”： 1.70V
“0100”： 1.80V
“0101”： 1.90V
“0110”： 2.50V
“0111”： 2.55V
“1000”： 2.60V
“1001”： 2.65V
“1010”： 2.70V
“1011”： 2.75V
“1100”： 2.80V (Initial state)
“1101”： 2.85V
“1110”： 2.90V
“1111”： 3.00V
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
45/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 05h : LDOADJ3 Register (Read/Write)
Address
(Index)
Register Name
R/W
05h
LDOADJ3
R/W
Initial
Value
C4h
Bit7
Bit6
Bit5
Bit4
Bit3
LDO6ADJ[3:0]
1
1
0
Bit2
Bit1
Bit0
LDO5ADJ[3:0]
0
0
1
0
0
Bit[3:0]: LDO5ADJ[3:0] LDO5 output voltage control
“0000”： 1.00V
“0001”： 1.05V
“0010”： 1.10V
“0011”： 1.15V
“0100”： 1.20V (Initial state)
“0101”： 1.25V
“0110”： 1.30V
“0111”： 1.70V
“1000”： 1.80V
“1001”： 1.90V
“1010”： 2.60V
“1011”： 2.70V
“1100”： 2.80V
“1101”： 2.90V
“1110”： 3.00V
“1111”： 3.10V
Bit[7:4]: LDO6ADJ[3:0] LDO6 output voltage control
“0000”： 1.10V
“0001”： 1.20V
“0010”： 1.30V
“0011”： 1.70V
“0100”： 1.80V
“0101”： 1.90V
“0110”： 2.50V
“0111”： 2.55V
“1000”： 2.60V
“1001”： 2.65V
“1010”： 2.70V
“1011”： 2.75V
“1100”： 2.80V (Initial state)
“1101”： 2.85V
“1110”： 2.90V
“1111”： 3.00V
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
46/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 06h : LDOADJ4 Register (Read/Write)
Address
(Index)
Register Name
R/W
06h
LDOADJ4
R/W
Initial
Value
6Ch
Bit7
Bit6
Bit5
Bit4
Bit3
LDO8ADJ[3:0]
0
1
1
Bit2
Bit1
Bit0
LDO7ADJ[3:0]
0
1
1
0
0
Bit[3:0]: LDO7ADJ[3:0] LDO7 output voltage control
“0000”： 1.10V
“0001”： 1.20V
“0010”： 1.30V
“0011”： 1.70V
“0100”： 1.80V
“0101”： 1.90V
“0110”： 2.50V
“0111”： 2.55V
“1000”： 2.60V
“1001”： 2.65V
“1010”： 2.70V
“1011”： 2.75V
“1100”： 2.80V (Initial state)
“1101”： 2.85V
“1110”： 2.90V
“1111”： 3.00V
Bit[7:4]: LDO8ADJ[3:0] LDO8 output voltage control
“0000”： 1.20V
“0001”： 1.30V
“0010”： 1.70V
“0011”： 1.80V
“0100”： 2.40V
“0101”： 2.45V
“0110”： 2.50V (Initial state)
“0111”： 2.55V
“1000”： 2.60V
“1001”： 2.65V
“1010”： 2.70V
“1011”： 2.75V
“1100”： 2.80V
“1101”： 2.85V
“1110”： 2.90V
“1111”： 3.00V
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
47/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 07h : LDOADJ5 Register (Read/Write)
Address
(Index)
Register Name
R/W
07h
LDOADJ5
R/W
Initial
Value
CCh
Bit7
Bit6
Bit5
Bit4
Bit3
LDO10ADJ[3:0]
1
1
0
Bit2
Bit1
Bit0
LDO9ADJ[3:0]
0
1
1
0
0
Bit[3:0]: LDO9ADJ[3:0] LDO9 output voltage control
“0000”： 1.10V
“0001”： 1.20V
“0010”： 1.30V
“0011”： 1.70V
“0100”： 1.80V
“0101”： 1.90V
“0110”： 2.50V
“0111”： 2.55V
“1000”： 2.60V
“1001”： 2.65V
“1010”： 2.70V
“1011”： 2.75V
“1100”： 2.80V (Initial state)
“1101”： 2.85V
“1110”： 2.90V
“1111”： 3.00V
Bit[7:4]: LDO10ADJ[3:0] LDO10 output voltage control
“0000”： 1.10V
“0001”： 1.20V
“0010”： 1.30V
“0011”： 1.70V
“0100”： 1.80V
“0101”： 1.90V
“0110”： 2.50V
“0111”： 2.55V
“1000”： 2.60V
“1001”： 2.65V
“1010”： 2.70V
“1011”： 2.75V
“1100”： 2.80V (Initial state)
“1101”： 2.85V
“1110”： 2.90V
“1111”： 3.00V
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
48/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
LDOADJ6 Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
08h
LDOADJ6
R/W
-
44h
0
Initial
Value
Bit6
Bit5
Bit4
LDO12ADJ[2:0]
1
0
Bit3
Bit2
0
0
Bit1
Bit0
LDO11ADJ[2:0]
1
0
0
Bit[3:0]: LDO11ADJ[3:0] LDO11 output voltage control
“000”： 1.00V
“001”： 1.05V
“010”： 1.10V
“011”： 1.15V
“100”： 1.20V (Initial state)
“101”： 1.25V
“110”： 1.30V
“111”： 1.35V
Bit[7:4]: LDO12ADJ[3:0] LDO12 output voltage control
“000”： 1.00V
“001”： 1.05V
“010”： 1.10V
“011”： 1.15V
“100”： 1.20V (Initial state)
“101”： 1.25V
“110”： 1.30V
“111”： 1.35V
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
49/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 09h : SWREGADJ1 Register (Read/Write)
Address
(Index)
Register Name
R/W
09h
SWREGADJ1
R/W
Initial
Value
D2h
Bit7
Bit6
Bit5
Bit4
Bit3
SWREG2ADJ[3:0]
1
1
0
Bit2
Bit1
Bit0
SWREG1ADJ[3:0]
1
0
1
0
0
Bit[3:0]: SWREG1ADJ[3:0] SWREG1 output voltage control
“0000”： 1.00V
“0001”： 1.05V
“0010”： 1.10V
“0011”： 1.15V
“0100”： 1.20V (Initial state)
“0101”： 1.25V
“0110”： 1.30V
“0111”： 1.35V
“1000”： 1.40V
“1001”： 1.45V
“1010”： 1.50V
“1011”： 1.70V
“1100”： 1.75V
“1101”： 1.80V
“1110”： 1.85V
“1111”： 1.90V
Bit[7:4]: SWREG2ADJ[3:0] SWREG2 output voltage control
“0000”： 1.00V
“0001”： 1.05V
“0010”： 1.10V
“0011”： 1.15V
“0100”： 1.20V
“0101”： 1.25V
“0110”： 1.30V
“0111”： 1.35V
“1000”： 1.40V
“1001”： 1.45V
“1010”： 1.50V
“1011”： 1.70V
“1100”： 1.75V
“1101”： 1.80V (Initial state)
“1110”： 1.85V
“1111”： 1.90V
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
50/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 0Ah : SWREGADJ2 Register (Read/Write)
Address
(Index)
Register Name
R/W
0Ah
SWREGADJ2
R/W
Initial
Value
84h
Bit7
Bit6
Bit5
Bit4
Bit3
SWREG4ADJ[3:0]
1
0
0
Bit2
Bit1
Bit0
SWREG3ADJ[3:0]
0
0
1
0
0
Bit[3:0]: SWREG3ADJ[3:0] SWREG3 output voltage control
“0000”： 1.00V
“0001”： 1.05V
“0010”： 1.10V
“0011”： 1.15V
“0100”： 1.20V (Initial state)
“0101”： 1.25V
“0110”： 1.30V
“0111”： 1.35V
“1000”： 1.40V
“1001”： 1.45V
“1010”： 1.50V
“1011”： 1.70V
“1100”： 1.75V
“1101”： 1.80V
“1110”： 1.85V
“1111”： 1.90V
Bit[7:4]: SWREG4ADJ[3:0] SWREG4 output voltage control
“0000”： 1.00V
“0001”： 1.05V
“0010”： 1.10V
“0011”： 1.15V
“0100”： 1.20V
“0101”： 1.25V
“0110”： 1.30V
“0111”： 1.35V
“1000”： 1.40V (Initial state)
“1001”： 1.45V
“1010”： 1.50V
“1011”： 1.70V
“1100”： 1.75V
“1101”： 1.80V
“1110”： 1.85V
“1111”： 1.90V
When this output is used to power LDO11 or LDO12 via VIN2, the output must be set to meet the minimum
input voltage condition.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
51/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 0Bh : SWREGADJ3 Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
Bit6
Bit5
Bit4
0Bh
SWREGADJ3
R/W
-
-
-
-
0Bh
0
0
0
0
Initial
Value
Bit3
Bit2
Bit1
Bit0
SWREG5ADJ[3:0]
1
0
1
1
Bit[3:0]: SWREG5ADJ[3:0] SWREG5 output voltage control
“0000”： 1.20V
“0001”： 1.40V
“0010”： 1.70V
“0011”： 1.75V
“0100”： 1.80V
“0101”： 1.85V
“0110”： 1.90V
“0111”： 3.00V
“1000”： 3.05V
“1001”： 3.10V
“1010”： 3.15V
“1011”： 3.20V (Initial state)
“1100”： 3.25V
“1101”： 3.30V
“1110”： 3.35V
“1111”： 3.40V
When this output is used to power LDO1, LDO4, LDO6, LDO7, LDO8, LDO9, and LDO10 via VIN1,
the output must be set to meet the minimum input voltage condition.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
52/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 0Ch : ENLD_DIS Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
0Ch
ENLD_DIS
R/W
-
-
-
-
-
-
-
ENLD7_DIS
00h
0
0
0
0
0
0
0
0
Initial
Value
Bit [0]: ENLD7_DIS EN_O7 external control pin disable register
“0” ： EN_O7 control enabled (Initial State)
“1” ： LDO7 controlled by LDO7ON register
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
53/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 0Dh : LDOPD1_DIS Register (Read/Write)
Address
(Index)
Register Name
R/W
0Dh
LDOPD1_DIS
R/W
Initial
Value
00h
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
Bit1
Bit0
LDO8PD_ LDO7PD_ LDO6PD_ LDO5PD_ LDO4PD_ LDO3PD_ LDO2PD_ LDO1PD_
DIS
DIS
DIS
DIS
DIS
DIS
DIS
DIS
0
0
0
0
Bit0:
LDO1PD_DIS LDO1 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit1:
LDO2PD_DIS LDO2 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit2:
LDO3PD_DIS LDO3 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit3:
LDO4PD_DIS LDO4 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit4:
LDO5PD_DIS LDO5 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit5:
LDO6PD_DIS LDO6 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit6:
LDO7PD_DIS LDO7 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit7:
LDO8PD_DIS LDO8 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
0
0
0
0
○This product is not designed protection against radioactive rays
54/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 0Eh : LDOPD2_DIS Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
Bit6
Bit5
Bit4
0Eh
LDOPD2_DIS
R/W
-
-
-
-
00h
0
0
0
0
Initial
Value
Bit3
Bit1
Bit0
LDO12PD_LDO11PD_ LDO10PD_ LDO9PD_
DIS
DIS
DIS
DIS
Bit0:
LDO9PD_DIS LDO9 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit1:
LDO10PD_DIS LDO10 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit2:
LDO11PD_DIS LDO11 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit3:
LDO12PD_DIS LDO12 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
Bit2
0
0
0
0
○This product is not designed protection against radioactive rays
55/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 0Fh : SWREGPD_DIS Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
Bit6
Bit5
0Fh
SWREGPD_DIS
R/W
-
-
-
00h
0
0
0
Initial
Value
Bit4
Bit3
Bit2
Bit0
SWREG5PDSWREG4PDSWREG3PDSWREG2PDSWREG1PD
_DIS
_DIS
_DIS
_DIS
_DIS
0
0
0
Bit0:
SWREG1PD_DIS SWREG1 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit1:
SWREG2PD_DIS SWREG2 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit2:
SWREG3PD_DIS SWREG3 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit3:
SWREG4PD_DIS SWREG4 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
Bit4:
SWREG5PD_DIS SWREG5 Discharge resistor ON/OFF control
“0”： Discharge enabled (Initial state)
“1”： Discharge disabled
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
Bit1
0
0
○This product is not designed protection against radioactive rays
56/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 10h : ANASW_CNT Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
10h
ANASW_CNT
R/W
-
-
-
-
-
ANASW_E
N
00h
0
0
0
0
0
0
Initial
Value
Bit1
Bit0
ANASW_SEL[1:0]
0
0
Bit[1:0]: ANASW_SEL[1:0] Analog Switch input select control
“00”： ASWIN1 select (Initial state)
“01”： ASWIN2 select
“10”： ASWIN3 select
“11”： ASWIN4 select
Bit2:
ANASW_EN Analog Switch ON/OFF control
“0”： Fixed ‘L’ output (Initial state)
“1”： Output enabled
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
57/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 11h : TCXO_CNT Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
11h
TCXO_CNT
R/W
-
40h
0
Initial
Value
Bit6
Bit5
Bit4
TCXO_MASK[2:0]
1
0
1
Bit3
Bit2
-
-
0
0
Bit1
Bit0
TCXO_EN TCXO_SEL
0
1
Bit[0]: TCXO_SEL TCXO buffer control select
“0”： LDO7 ON/OFF synchronous control (Initial state)
LDO7=OFF: TCXO=OFF
LDO7=ON: TCXO=ON
“1”： TCXO_EN register control mode
Bit[1]: TCXO_EN TCXO buffer ON/OFF register control
“0”： Buffer OFF (Initial state)
“1”： Buffer ON
The TCXO buffer control follows the control table shown below.
TCXO_SEL TCXO_EN ENLD7_DIS EN_O7 LDO7ON TCXO buffer
register
register
register
pin
register
control
0
*
0
0
*
OFF
0
*
0
1
*
ON
0
*
1
*
0
OFF
0
*
1
*
1
ON
1
0
*
*
*
OFF
1
1
*
*
*
ON
Bit[6:4]: TCXO_MASK TCXO buffer output mask length control
“000”： 30us
“001”： 120us
“010”： 220us
“011”： 310us
“100”： 410us
“101”： 530us (Initial state)
“110”： 620us
“111”： 720us
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
58/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 12h : OSC_CNT Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
Bit6
Bit5
Bit4
Bit3
Bit2
12h
OSC_CNT
R/W
-
-
-
-
-
-
03h
0
0
0
0
0
0
Initial
Value
Bit1
Bit0
C32KOUT
OSC_EN
_EN
1
1
Bit[0]: OSC_EN OSC ON/OFF control
“0”： Oscillation OFF
“1”： Oscillation ON (Initial state)
Bit[1]: C32KOUT_EN C32KOUT buffer output control
“0”： Buffer OFF
“1”： Buffer ON (Initial state)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
59/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 13h : SWREGPWM Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
Bit6
Bit5
13h
SWREGPWM
R/W
-
-
-
00h
0
0
0
Initial
Value
Bit4
Bit3
Bit1
Bit0
SWREG5 SWREG4 SWREG3 SWREG2 SWREG1
PWM
PWM
PWM
PWM
PWM
0
Bit0:
SWREG1PWM SWREG1 PWM fixed mode enable control
“0”： PFM/PWM auto mode (Initial state)
“1”： PWM fixed mode
Bit1:
SWREG2PWM SWREG2 PWM fixed mode enable control
“0”： PFM/PWM auto mode (Initial state)
“1”： PWM fixed mode
Bit2:
SWREG3PWM SWREG3 PWM fixed mode enable control
“0”： PFM/PWM auto mode (Initial state)
“1”： PWM fixed mode
Bit3:
SWREG4PWM SWREG4 PWM fixed mode enable control
“0”： PFM/PWM auto mode (Initial state)
“1”： PWM fixed mode
Bit4:
SWREG5PWM SWREG5 PWM fixed mode enable control
“0”： PFM/PWM auto mode (Initial state)
“1”： PWM fixed mode
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
Bit2
0
0
0
0
○This product is not designed protection against radioactive rays
60/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Address 14h : SW5BYPASS Register (Read/Write)
Address
(Index)
Register Name
R/W
Bit7
Bit6
Bit5
Bit4
Bit3
14h
SW5BYPASS
R/W
-
reserved
reserved
BYPASS_
DIS
-
01h
0
0
0
0
0
Initial
Value
Bit2
Bit1
Bit0
VINDET5ADJ[2:0]
0
0
1
Bit[2:0]: VINDET5ADJ[2:0] SWREG5 VBAT Bypass mode detect level
“000”： 3.30V
“001”： 3.35V (Initial state)
“010”： 3.40V
“011”： 3.45V
“100”： 3.50V
“101”： 3.55V
“110”： 3.60V
“111”： 3.65V
Bit4:
BYPASS_DIS SWREG5 VBAT Bypass mode control
“0”： Bypass mode enable (Initial state)
“1”： Bypass mode disable
Please always write “0” to reserved registers when in use.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
61/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Typical Characteristics
100
100
90
90
80
80
PFM Mode
PWM Mode
70
70
60
60
Efficie ncy [% ]
Efficiency [%]
PFM Mode
PWM Mode
50
40
30
50
40
30
VBAT=3.6V
VBAT=3.6V
20
Ta=25°C
20
Ta=25°C
Output Voltage = 1.8V
Output Voltage = 1.2V
10
10
0
0
0.1
1
10
100
1000
0.1
1
Output Current [mA]
100
1000
Figure 20. Efficiency vs Output Current
Figure 21. Efficiency vs Output Current
(SWREG1 Efficiency)
(SWREG2 Efficiency)
100
100
90
90
80
PFM Mode
80
PFM Mode
PWM Mode
PWM Mode
70
70
60
60
Efficie ncy [% ]
Efficiency [%]
10
Outpu t C urren t [mA]
50
40
30
50
40
30
VBAT=3.6V
VBAT=3.6V
20
Ta=25°C
20
Ta=25°C
Output Voltage = 1.4V
Output Voltage = 1.2V
10
10
0
0
0.1
1
10
100
1000
Output Current [mA]
0.1
1
10
100
Figure 22. Efficiency vs Output Current
Figure 23. Efficiency vs Output Current
(SWREG3 Efficiency)
(SWRE4 Efficiency)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1000
Outpu t C urren t [mA]
○This product is not designed protection against radioactive rays
62/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Typical Characteristics
100
90
PFM Mode
PWM Mode
80
Efficiency [%]
70
60
50
40
30
VBAT=3.6V
Ta=25°C
20
Output Voltage = 3.2V
10
0
0.1
1
10
100
1000
10000
Output Current [mA]
Figure 24. Efficiency vs Output Current
1.30
1. 90
1.28
1. 88
1.26
1. 86
1.24
1. 84
Outpu t Vol ta ge [V]
Output Voltage [V]
(SWRE5 Efficiency)
1.22
1.20
1.18 PFM Mode
PWM Mode
1. 82
1. 80
1. 78
1.16
1. 76
1.14
1. 74
1.12
1. 72
PFM Mode
PWM Mode
1. 70
1.10
0
100
200
300
400
500
600
700
800
900
1000
0
50
100
150
200
250
300
350
400
Figure 25. Output Voltage vs Output Current
Figure 26. Output Voltage vs Output Current
(SWREG1 Load Regulation)
(SWREG2 Load Regulation)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
450
500
Ou tp ut C urre nt [mA]
Output Current [mA]
○This product is not designed protection against radioactive rays
63/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
1.30
1. 50
1.28
1. 48
1.26
1. 46
1.24
1. 44
Outpu t Vol ta ge [V]
Output Voltage [V]
Typical Characteristics
1.22
1.20
1.18
PFM Mode
PWM Mode
1. 42
1. 40
1. 38
1.16
1. 36
1.14
1. 34
1.12
1. 32
1.10
PFM Mode
PWM Mode
1. 30
0
100
200
300
400
500
600
700
800
900
1000
Output Current [mA]
0
100
200
300
400
500
Ou tp ut C urre nt [mA]
Figure 27. Output Voltage vs Output Current
Figure 28. Output Voltage vs Output Current
(SWREG4 Load Regulation)
(SWREG3 Load Regulation)
3. 30
3. 28
3. 26
Outpu t Vol ta ge [V]
3. 24
3. 22
3. 20
PFM Mode
PWM Mode
3. 18
3. 16
3. 14
3. 12
3. 10
0
200
400
600
800
1000
1200
1400
Output Curre nt [mA]
Figure 29. Output Voltage vs Output Current
(SWREG5 Load Regulation)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
64/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
2. 70
3.4
2. 68
3. 38
2. 66
3. 36
2. 64
3. 34
Outpu t Vol ta ge [V]
Outpu t Vol ta ge [V]
Typical Characteristics
2. 62
2. 60
2. 58
2. 56
3. 32
3.3
3. 28
3. 26
VBAT=3.6V
VBAT=3.6V
2. 54
3. 24
Ta=25°C
2. 52
Ta=25°C
VIN1(SWREG5=3.2V)+LDO
VBAT+LDO
3. 22
2. 50
3.2
0
50
100
15 0
20 0
2 50
3 00
0
10
20
Figure 30. Output Voltage vs Output Current
(LDO1 Load Regulation)
40
50
Figure 31. Output Voltage vs Output Current
(LDO2 Load Regulation)
1. 90
2.9
1. 88
2. 88
1. 86
2. 86
1. 84
2. 84
Outpu t Vol ta ge [V]
Outpu t Vol ta ge [V]
30
Outp ut C urren t [mA]
Output Cur rent [mA]
1. 82
1. 80
1. 78
1. 76
2. 82
2.8
2. 78
2. 76
VBAT=3.6V
VBAT=3.6V
1. 74
2. 74
Ta=25°C
1. 72
VBAT+LDOVBAT=3.6V
Ta=25°C
VIN1(SWREG5=3.2V)+LDO
2. 72
1. 70
2.7
0
10
20
30
40
50
Figure 32. Output Voltage vs Output Current
(LDO3 Load Regulation)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
0
50
100
150
200
250
300
Output Curre nt [mA]
Ou tput Curre nt [mA]
Figure 33. Output Voltage vs Output Current
(LDO4 Load Regulation)
○This product is not designed protection against radioactive rays
65/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
1. 30
2. 90
1. 28
2. 88
1. 26
2. 86
1. 24
2. 84
Outpu t Vol ta ge [V]
Outpu t Vol ta ge [V]
Typical Characteristics
1. 22
1. 20
1. 18
1. 16
2. 82
2. 80
2. 78
2. 76
VBAT=3.6V
VBAT=3.6V
Ta=25 ℃
VIN1(SWREG5=3.2V)+LDO
Ta=25°C
1. 14
VBAT=3.6V
2. 74
VIN1(SWREG5=3.2V)+LDO
1. 12
Ta=25°C
VBAT+LDO
2. 72
1. 10
2. 70
0
30
60
90
120
150
0
30
Ou tp ut C urre nt [mA]
Figure 34. Output Voltage vs Output Current
(LDO5 Load Regulation)
90
120
150
Figure 35. Output Voltage vs Output Current
(LDO6 Load Regulation)
2. 90
2. 60
2. 88
2. 58
2. 86
2. 56
2. 84
2. 54
Outpu t Vol ta ge [V]
Outpu t Vol ta ge [V]
60
Ou tp ut C urre nt [mA]
2. 82
2. 80
2. 78
2. 52
2. 50
2. 48
2. 46
2. 76
VBAT=3.6V
2. 74
VBAT=3.6V
2. 44
Ta=25°C
VBAT+LDO
2. 72
Ta=25°C
VIN1(SWREG5=3.2V)+LDO
2. 42
2. 40
2. 70
0
10
20
30
40
0
50
60
90
120
150
Figure 37. Output Voltage vs Output Current
(LDO8 Load Regulation)
Figure 36. Output Voltage vs Output Current
(LDO7 Load Regulation)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
30
Ou tp ut C urre nt [mA]
Outpu t Cu rrent [mA]
○This product is not designed protection against radioactive rays
66/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
2. 90
2. 90
2. 88
2. 88
2. 86
2. 86
2. 84
2. 84
Outpu t Vol ta ge [V]
Outpu t Vol ta ge [V]
Typical Characteristics
2. 82
2. 80
2. 78
2. 76
2. 82
2. 80
2. 78
2. 76
VBAT=3.6V
2. 74
VBAT=3.6V
2. 74
Ta=25°C
VIN1(SWREG5=3.2V)+LDO
2. 72
Ta=25°C
VIN1(SWREG5=3.2V)+LDO
2. 72
2. 70
2. 70
0
30
60
90
120
150
0
30
Ou tp ut C urre nt [mA]
Figure 38. Output Voltage vs Output Current
(LDO9 Load Regulation)
90
120
150
Figure 39. Output Voltage vs Output Current
(LDO10 Load Regulation)
1. 30
1. 30
1. 28
1. 28
1. 26
1. 26
1. 24
1. 24
Outpu t Vol ta ge [V]
Outpu t Vol ta ge [V]
60
Outpu t Cu rren t [mA]
1. 22
1. 20
1. 18
1. 16
1. 22
1. 20
1. 18
1. 16
VBAT=3.6V
1. 14
VBAT=3.6V
1. 14
Ta=25°C
VIN2(SWREG4=1.4V)+LDO
1. 12
Ta=25°C
VIN2(SWREG4=1.4V)+LDO
1. 12
1. 10
1. 10
0
30
60
90
120
150
0
Ou tp ut C urre nt [mA]
60
90
120
150
Ou tp ut C urre nt [mA]
Figure 40. Output Voltage vs Output Current
(LDO11 Load Regulation)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
30
Figure 41. Output Voltage vs Output Current
(LDO12 Load Regulation)
○This product is not designed protection against radioactive rays
67/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
PCB Layout Guidelines
To achieve the best efficiency, stability, and regulation, it is necessary to meet following rules.
1) Bypass Capacitor (CPBAT) should be placed as close as possible to the IC pins.
2) Bypass Capacitor (CPBAT) should be connected by TOP Layer. (It is better not used via)
3) The inductor (L) and output capacitor (Cout) should be also placed to near side.
4) The Feed Back line of buck converter (FB) is wired as short as possible.
5) It is better don't place the GND cupper trace under the chip Inductor for reducing the effective of noise
6) To further reduce the noise interference on sensitive nodes use the ground plane layout. When you connect to the GND plane, please
reduce the impedance using VIA plurality of contacts.
Figure 42. Schematic & PCB Layout Ideal Image (DCDC)
7) To keep the good stability, don't placed GND trace under the Crystal.
Please keep the distance between the Crystal and noisy device.
Please be as short as possible the distance of crystal and BD7185AGWL because it is a sensitive device.
8) This device includes the noisy block. (Buck converter, SIM interface, 32 KHz oscillator)
There is a possibility that these noises affect the other electric components of the mobile instruments.
Please check thoroughly with your set about the effect of noise. The good PCB artwork reduces the effective of noise.
To prevent it from BD7185AGWL, please consider to use metal can shielding or chip bead.
Shield
VDDOSC
0.1uF
.
X’tal
OSC_IN
_
Don’t fill the
copper trace.
OSC_OUT
GNDOSC
Figure 43. Schematic & PCB Layout Image (X’tal)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
68/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
PCB Layout (Evaluation Board Layout)
CL4
L4
CL3
L3
CL2
L2
CL1
CL5
L5
CB1
CDVDD
L1
CB5
COUT3
COUT6
COUT2
COUT4
COUT12
COUT1
COUT11
CRERFC
COUT9 COUT10
COUT8
1. Bypass Capacitor (CBx) should be placed as close as possible to the IC Pins.
2. The LX Line is wired as short as possible.
Figure 44. PCB Layout Image (Top Layer)
Figure 45. PCB Layout Image (Mid1 Layer)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
69/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
GND
DVDD
GND
1. Isolate the crystal from anything else. And do not Placed GND trace planes beneath the crystal.
Figure 46. PCB Layout Image (Mid2 Layer)
GND
GND
1. Isolate the crystal from anything else. And don't Placed GND trace planes beneath the crystal.
Figure 47. PCB Layout Image (Mid3 Layer)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
70/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
GND
GND
1. Isolate the crystal from anything else. And don't Placed GND trace planes beneath the crystal.
Figure 48. PCB Layout Image (Mid4 Layer)
.
1. Bypass Capacitor (CBx) should be placed as close as possible to the IC Pins.
.
2. XOSC, COSCIN and COSCOUT is BOTTOM Layer. It’s shielded by GND and influence of a noise is carried out to minimization.
And do not Placed GND trace planes beneath the crystal.
CB3
CB4
CB2
COUT7
COUT5
CVIN1
XOSC
CVDDOSC COSCOUT
COSCIN
CVBATREF
Figure 49. PCB Layout Image (Mid4 Layer)
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
71/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Ordering Information
B
D
7
1
8
5
A
G
Part Number
W
L
-
Package
GWL: UCSP50L3C
E2
Packaging and forming specification
E2: Embossed tape and reel
Figure 50. Ordering Information
Physical Dimension Tape and Reel Information
UCSP50L3C
BD7185AGWL
1PINMARK
MARK
1PIN
Lot
LotNo.
No.
3.8±0.05
5
0
.
0
±
8
.
3
D71801
D7185A
3.8±0.05
3.8±0.05
0.1±0.05
0.57MAX
5
0 X
.0 A
M
±7
1 5
.0 .0
SS
0.06
0.06 SS
0.3±0.05
5
0
.0
±
3
.
0
80-φ0 .20±0 .05
80-φ0.20±0.05
0.05
0 .05
AB
AA
AB
JJ
HH
GG
FF
EE
DD
CC
BB
AA
P=0.4×8
BB 8
×
4
.
0
=
P
11 22 33 44 55 66 77 88 99
0.3±0 .05
0.3±0.05
P=0.4×8
P=0.4×8
< Tape and Reel Information>
Tape
Embossed carrier tape
Quantity
Direction of Feed
2500pcs
E2
The direction is the pin 1 of product is at the upper left when you hold reel
on the left hand and you pull out the tape on the right hand.
1234
1234
Reel
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1234
1234
1pin
1234
1234
Direction of feed
○This product is not designed protection against radioactive rays
72/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply terminals.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
However, pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go
below ground due to back EMF or electromotive force. In such cases, the user should make sure that such voltages
going below ground will not cause the IC and the system to malfunction by examining carefully all relevant factors
and conditions such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 54mm x 62mm glass epoxy board. In case of exceeding this absolute maximum rating,
increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
73/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Operational Notes – continued
11. Unused Input Terminals
Input terminals of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance
and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input terminals should be connected to
the power supply or ground line.
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Figure 50. Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
16. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
74/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
BD7185AGWL
Revision History
Date
Revision
Changes
2014.04.11
001
New release
○Product structure：Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
○This product is not designed protection against radioactive rays
75/75
TSZ02201-0Q4Q0AB00010-1-2
8.Apr.2014 Rev.001
Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice – GE
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice – GE
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
工商网监
湘ICP备2023018690号
