Datasheet
Single-Output LDO Regulators
Ultra Low Quiescent Current LDO
Regulator
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●General Description
The BD7xxL2EFJ-C, BD7xxU2EFJ-C,
BD7xxL2FP-C, BD7xxL2FP3-C are low quiescent
regulators featuring 50V absolute maximum voltage,
and output voltage accuracy of ±2%, 200mA output
current and 6μA (Typ) current consumption. These
regulators are therefore ideal for applications
requiring a direct connection to the battery and a
low current consumption. Ceramic capacitors can
be used for compensation of the output capacitor
phase. Furthermore, these ICs also feature
overcurrent protection to protect the device from
damage caused by short-circuiting and an
integrated thermal shutdown to protect the device
from overheating at overload conditions.
●Key specification
◼ Ultra low quiescent current:
◼ Output voltage:
◼ Output current capability:
◼ High output voltage accuracy:
◼ Low ESR ceramic capacitor
can be used as output capacitor
◼ AEC-Q100 Qualified(*2)
(*2:Grade1)
●Packages
◼ EFJ: HTSOP-J8
●Features
◼
Ultra low quiescent current: 6μA (Typ)
◼
Output current capability: 200mA
◼
Output voltage: 3.3 V or 5.0 V (Typ)
◼
High output voltage accuracy: ±2%
◼
Low saturation voltage by using PMOS output
transistor.
◼
Integrated overcurrent protection to protect the
IC from damage caused by output
short-circuiting.
◼
Integrated thermal shutdown to protect the IC
from overheating at overload conditions.
◼
Low ESR ceramic capacitor can be used as
output capacitor.
◼
HTSOP-J8, TO252-3, SOT223-4(F) (*1)
3type package
(*1:SOT223-4, SOT223-4F)
6μA (Typ)
3.3 V or 5.0 V (Typ)
200mA
±2%
W (Typ) x D (Typ) x H (Max)
4.90mm x 6.00mm x 1.00mm
◼
FP: TO252-3
6.50mm x 9.50mm x 2.50mm
◼
FP3:SOT223-4(F)
6.53mm x 7.00mm x 1.80mm
Figure 1. Package Outlook
●Applications
◼
Automotive (body, audio system, navigation system, etc.)
●Typical Application Circuits
◼ Components externally connected: 0.1 µF ≤ CIN, 4.7 µF ≤ COUT (Min)
*Electrolytic, tantalum and ceramic capacitors can be used.
FIN
FIN
8:VCC
CIN
7:N.C
6 :N.C
5:GND
BD7xxL2EFJ-C
BD7xxU2EFJ-C
BD7xxL2FP3-C
BD7xxL2FP-C
1:VCC
1:VCC
1:VOUT
2:N.C
3 :N.C
2:N.C
2:N.C
3:VOUT
CIN
COUT
HTSOP-J8
COUT
TO252-3
3 :VO UT
1
1
4:N.C
CIN
COUT
SOT223-4(F)
Figure 2. Typical Application Circuits
○Product structure:Silicon monolithic integrated circuit
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Ordering Information
B
D
7
Output
Voltage
33: 3.3V
50: 5.0V
x
x
L
Automotive
L: L Series
U: L Series,
Additional
production line
2
E
F
Package
EFJ: HTSOP-J8
FP: TO252-3
FP3: SOT223-4(F)
J
-
C
E
2
Product Rank
Packaging and Forming
C: for Automotive Specification
E2: Embossed Tape and Reel
●Lineup
Output current
ability
Output
voltage
(Typ)
3.3 V
200 mA
5.0 V
Package type
Orderable Part Number
Remarks
HTSOP-J8
BD733L2EFJ-CE2
Production LineA (Note 1)
HTSOP-J8
BD733U2EFJ-CE2
Production LineB (Note 1)
TO252-3
BD733L2FP-CE2
SOT223-4(F)
BD733L2FP3-CE2
HTSOP-J8
BD750L2EFJ-CE2
Production LineA (Note 1)
HTSOP-J8
BD750U2EFJ-CE2
Production LineB (Note 1)
TO252-3
BD750L2FP-CE2
SOT223-4(F)
BD750L2FP3-CE2
(Note 1) For the purpose of improving production efficiency, Production Line A and B have a multi-line configuration.
Electric characteristics noted in Datasheet does not differ between Production Line A and B. Production Line B is recommended for new product.
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Pin Configuration
TO252-3
(TOP VIEW)
HTSOP-J8
(TOP VIEW)
8
7
6
SOT223-4(F)
(TOP VIEW)
5
FIN
1
2
3
4
1
2
3
1
2
3
Figure 3. Pin Configuration
●Pin Description
■TO252-3, SOT223-4(F)
■HTSOP-J8
Pin No.
Pin Name
Function
Pin No.
Pin Name
Function
1
VOUT
Output pin
1
VCC
Supply voltage input pin
2
N.C.
Not connected
2
N.C./GND
TO252-3: N.C.
SOT223-4(F): GND
3
N.C.
Not connected
3
VOUT
Output pin
4
N.C.
Not connected
FIN
GND
GND
5
GND
GND
6
N.C.
Not connected
7
N.C.
Not connected
8
VCC
Supply voltage input pin
(※N.C. terminals are not need to connect to GND.)
(※N.C. terminals are not need to connect to GND.
(※Exposed die pad is need to be connected to GND in the inside of IC.)
(※Exposed die pad is connected to GND in the inside of IC.)
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Block Diagram
■HTSOP-J8
VCC(8PIN)
N.C.(7PIN)
N.C.(6PIN)
GND(5PIN)
PREREG
DRIVER
VREF
OCP
TSD
VOUT(1PIN)
N.C.(2PIN)
N.C.(3PIN)
N.C.(4PIN)
■TO252-3, SOT223-4(F)
GND(FIN)
PREREG
DRIVER
VREF
OCP
TSD
VCC(1PIN)
TO252-3
:N.C. (2PIN)
SOT223-4(F):GND(2PIN)
VOUT(3PIN)
Figure 4. Block Diagram
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Absolute Maximum Ratings(Ta=25°C)
Parameter
Symbol
Ratings
Unit
VCC
-0.3 to +50.0
V
Operating Temperature Range
Topr
-40 to +125
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Tjmax
150
°C
Supply Voltage
*1
Maximum Junction Temperature
*1 Pd should not be exceeded.
●Operating Conditions(-40 < Ta < +125°C)
■BD733L2EFJ-C, BD733U2EFJ-C, BD733L2FP-C, BD733L2FP3-C
Parameter
Symbol
Min
Max
Unit
Supply Voltage
*2
VCC
4.37
45.0
V
Startup Voltage
*3
VCC
3.0
-
V
IOUT
0
200
mA
Symbol
Min
Max
Unit
Output Current
■BD750L2EFJ-C, BD750U2EFJ-C, BD750L2FP-C, BD750L2FP3-C
Parameter
Supply Voltage
*2
VCC
5.8
45.0
V
Startup Voltage
*3
VCC
3.0
-
V
IOUT
0
200
mA
Output Current
*2 For output voltage, refer to the dropout voltage corresponding to the output current.
*3 When IOUT=0mA.
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Thermal Resistance(*1)
Parameter
Symbol
Thermal Resistance (Typ)
Unit
1s(*3)
2s2p(*4)
θJA
130
34
°C/W
ΨJT
15
7
°C/W
HTSOP-J8
Junction to Ambient
Junction to Top Characterization
Parameter(*2)
TO252-3
Junction to Ambient
θJA
136
23
°C/W
Parameter(*2)
ΨJT
17
3
°C/W
Junction to Ambient
θJA
164
71
°C/W
Junction to Top Characterization Parameter(*2)
ΨJT
20
14
°C/W
Junction to Top Characterization
SOT223-4(F)
(*1)Based on JESD51-2A(Still-Air).
(*2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface
of the component package.
(*3)Using a PCB board based on JESD51-3.
Layer Number of
Measurement Board
Single
Material
Board Size
FR-4
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70μm
(*4)Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
4 Layers
Material
Board Size
FR-4
114.3mm x 76.2mm x 1.6mmt
Top
2 Internal Layers
Thermal Via(*5)
Pitch
Diameter
1.20mm
Φ0.30mm
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70μm
74.2mm x 74.2mm
35μm
74.2mm x 74.2mm
70μm
(*5) This thermal via connects with the copper pattern of all layers.
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Electrical Characteristics (BD733L2EFJ-C, BD733U2EFJ-C, BD733L2FP-C, BD733L2FP3-C)
(Unless otherwise specified, -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA, Reference value: Ta=25°C)
Parameter
Symbol
Limit
Unit
Conditions
Min
Typ
Max
Ib
-
6
15
μA
Output voltage
VOUT
3.23
3.30
3.37
V
8V < VCC < 16V
0mA < IOUT < 100mA
Dropout voltage
ΔVd
-
0.6
1.0
V
VCC=VOUT×0.95, IOUT=200mA
Ripple rejection
R.R.
50
63
-
dB
f=120Hz, ein=1Vrms,
IOUT=100mA
Line regulation
Reg I
-
5
20
mV
8V < VCC < 16V
Load regulation
Reg L
-
5
20
mV
10mA < IOUT < 200mA
Bias current
●Electrical Characteristics (BD750L2EFJ-C, BD750U2EFJ-C, BD750L2FP-C, BD750L2FP3-C)
(Unless otherwise specified, -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA, Reference value: Ta=25°C)
Parameter
Symbol
Limit
Unit
Conditions
Min
Typ
Max
Ib
-
6
15
μA
Output voltage
VOUT
4.9
5.0
5.1
V
8V < VCC < 16V
0mA < IOUT < 100mA
Dropout voltage
ΔVd
-
0.4
0.7
V
VCC=VOUT×0.95, IOUT=200mA
Ripple rejection
R.R.
50
60
-
dB
f=120Hz, ein=1Vrms,
IOUT=100mA
Line regulation
Reg I
-
5
20
mV
8V < VCC < 16V
Load regulation
Reg L
-
5
20
mV
10mA < IOUT < 200mA
Bias current
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Typical Performance Curves
■BD733L2EFJ-C, BD733U2EFJ-C, BD733L2FP-C, BD733L2FP3-C Reference data
Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA
100
6
-40°C
25°C
125°C
BIAS CURRENT : lb[μA]
80
70
60
50
40
30
20
10
4
3
2
1
0
0
0
10
20
30
40
0
50
10
20
30
40
SUPPLY VOLTAGE : VCC[V]
SUPPLY VOLTAGE : VCC[V]
Figure 5. Bias current
Figure 6. Output voltage vs. Supply voltage
IOUT=10mA
6
50
6
-40°C
25°C
125°C
5
OUTPUT VOLTAGE : VOUT[V]
OUTPUT VOLTAGE : VOUT[V]
-40°C
25°C
125°C
5
OUTPUT VOLTAGE : VOUT[V]
90
4
3
2
1
-40°C
25°C
125°C
5
4
3
2
1
0
0
0
10
20
30
40
0
50
200
400
600
800
SUPPLY VOLTAGE : VCC[V]
OUTPUT CURRENT : IOUT[mA]
Figure 7. Output voltage vs. Supply voltage
IOUT=100mA
Figure 8. Output voltage vs. Load
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TSZ02201-0G1G0AN00010-1-2
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Typical Performance Curves – continued
■BD733L2EFJ-C, BD733U2EFJ-C, BD733L2FP-C, BD733L2FP3-C Reference data
Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA
90
1.2
80
RIPPLE REJECTION : R.R.[dB]
DROPOUT : △Vd[V]
-40°C
25°C
125°C
0.8
0.4
-40°C
25°C
125°C
70
60
50
40
30
20
10
0
0.0
0
40
80
120
160
10
200
100
10000
100000
FREQUENCY : f[Hz]
OUTPUT CURRENT : IOUT[mA]
Figure 10. Ripple rejection
(ein=1Vrms,IOUT=100mA)
Figure 9. Dropout voltage
6
20
18
14
OUTPUT VOLTAGE : VOUT[V]
-40°C
25°C
125°C
16
BIAS CURRENT : lb[μA]
1000
12
10
8
6
4
5
4
3
2
1
2
0
0
0
40
80
120
160
200
120
140
160
180
200
AMBIENT TEMPERATURE : Ta[℃]
OUTPUT CURRENT : IOUT[mA]
Figure 11. Total supply current vs. Load
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Figure 12. Thermal shutdown
(Output voltage vs. Temperature)
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Typical Performance Curves – continued
■BD733L2EFJ-C, BD733U2EFJ-C, BD733L2FP-C, BD733L2FP3-C Reference data
Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA
10
9
3.334
BIAS CURRENT : lb[μA]
OUTPUT VOLTAGE : VOUT [V]
3.354
3.314
3.294
3.274
7
6
5
3.254
3.234
8
4
-40
0
40
80
120
AMBIENT TEMPERATURE : Ta[℃]
0
40
80
120
AMBIENT TEMPERATURE : Ta[℃]
Figure 13. Output voltage vs. Temperature
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TSZ22111・15・001
-40
Figure 14. Bias current vs. Temperature
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Typical Performance Curves – continued
■BD750L2EFJ-C, BD750U2EFJ-C, BD750L2FP-C, BD750L2FP3-C Reference data
Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA
100
8
-40°C
25°C
125°C
BIAS CURRENT : lb[μA] .
80
-40°C
25°C
125°C
7
OUTPUT VOLTAGE : VOUT[V] .
90
70
60
50
40
30
20
6
5
4
3
2
1
10
0
0
0
10
20
30
40
0
50
20
30
40
50
SUPPLY VOLTAGE : VCC[V]
SUPPLY VOLTAGE : VCC[V]
Figure 15. Bias current
Figure 16. Output voltage vs. Supply voltage
8
8
7
6
OUTPUT VOLTAGE : VOUT[V] .
-40°C
25°C
125°C
7
OUTPUT VOLTAGE : VOUT[V]
10
5
4
3
2
6
5
4
3
2
1
1
0
0
0
10
20
30
40
50
0
200
400
600
800
1000
OUTPUT CURRENT : IOUT[mA]
SUPPLY VOLTAGE : VCC[V]
Figure 17. Output voltage vs. Supply voltage
IOUT=100mA
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-40°C
25°C
125°C
Figure 18. Output voltage vs. Load
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Typical Performance Curves – continued
■BD750L2EFJ-C, BD750U2EFJ-C, BD750L2FP-C, BD750L2FP3-C Reference data
Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA
90
-40°C
25°C
125°C
-40°C
25°C
125°C
80
RIPPLE REJECTION : R.R.[dB]
DROPOUT VOLTAGE : △Vd[V]
1.2
0.8
0.4
70
60
50
40
30
20
10
0.0
0
40
80
120
160
0
200
10
100
OUTPUT CURRENT : IOUT[mA]
10000
100000
FREQUENCY : f[Hz]
Figure 19. Dropout voltage
Figure 20. Ripple rejection
(ein=1Vrms,IOUT=100mA)
6
20
18
-40°C
25°C
125°C
16
OUTPUT VOLTAGE : VOUT[V]
BIAS CURRENT : lb[μA] .
1000
14
12
10
8
6
4
5
4
3
2
1
2
0
0
0
40
80
120
160
200
120
140
160
180
200
AMBIENT TEMPERATURE : Ta[℃]
OUTPUT CURRENT : IOUT[mA]
Figure 21. Total supply current vs. Load
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Figure 22. Thermal shutdown
(Output voltage vs. Temperature)
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Typical Performance Curves – continued
■BD750L2EFJ-C, BD750U2EFJ-C, BD750L2FP-C, BD750L2FP3-C Reference data
Unless otherwise specified: -40 < Ta < +125°C, VCC=13.5V, IOUT=0mA
10
5.100
9
5.060
BIAS CURRENT : lb[μA]
OUTPUT VOLTAGE : VOUT[V]
5.080
5.040
5.020
5.000
4.980
4.960
4.940
8
7
6
5
4.920
4
4.900
-40
0
40
80
120
-40
0
40
80
AMBIENT TEMPERATURE : Ta[℃]
AMBIENT TEMPERATURE : Ta[℃]
Figure 23. Output voltage vs. Temperature
Figure 24. Bias current vs. Temperature
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BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Measurement Circuit (BD7xxL2EFJ-C BD7xxU2EFJ-C Series)
BD7xxL2EFJ-C
BD7xxU2EFJ-C
BD7xxL2EFJ-C
BD7xxU2EFJ-C
1µF
4.7µF
4.7µF
BD7xxL2EFJ-C
BD7xxU2EFJ-C
4.7µF
Measurement setup for Figure 8, 18
8:VCC 7:N.C. 6:N.C. 5:GND
BD7xxL2EFJ-C
BD7xxU2EFJ-C
1µF
BD7xxL2EFJ-C
BD7xxU2EFJ-C
1µF
1:VOUT 2:N.C. 3:N.C. 4:N.C.
4.7µF
IOUT
Measurement setup for Figure 9, 19
IOUT
8:VCC 7:N.C. 6:N.C. 5:GND
1Vrms
1:VOUT 2:N.C. 3:N.C. 4:N.C.
4.7µF
1:VOUT 2:N.C. 3:N.C. 4:N.C.
Measurement setup for
Figure 6, 7, 12, 13, 16, 17, 22, 23
8:VCC 7:N.C. 6:N.C. 5:GND
1µF
BD7xxL2EFJ-C
BD7xxU2EFJ-C
1µF
1:VOUT 2:N.C. 3:N.C. 4:N.C.
1:VOUT 2:N.C. 3:N.C. 4:N.C.
Measurement setup for Figure 5, 14, 15, 24
8:VCC 7:N.C. 6:N.C. 5:GND
8:VCC 7:N.C. 6:N.C. 5:GND
8:VCC 7:N.C. 6:N.C. 5:GND
1µF
HTSOP-J8
1:VOUT 2:N.C. 3:N.C. 4:N.C.
4.7µF
IOUT
Measurement setup for Figure 10, 20
IOUT
Measurement setup for Figure 11, 21
●Measurement Circuit (BD7xxL2FP-C Series) TO252-3
FIN
FIN
FIN
BD7xxL2FP-C
BD7xxL2FP-C
BD7xxL2FP-C
1:VCC 2:N.C. 3:VOUT
1:VCC 2:N.C. 3:VOUT
1:VCC 2:N.C. 3:VOUT
1µF
4.7µF
Measurement setup for Figure 5, 14, 15, 24
1µF
4.7µF
IOUT
Measurement setup for
Figure 6, 7, 12, 13, 16, 17, 22, 23
1µF
4.7µF
Measurement setup for Figure 8, 18
FIN
FIN
FIN
BD7xxL2FP-C
BD7xxL2FP-C
BD7xxL2FP-C
1:VCC 2:N.C. 3:VOUT
1:VCC 2:N.C. 3:VOUT
1:VCC 2:N.C. 3:VOUT
1µF
4.7µF
IOUT
Measurement setup for Figure 9, 19
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
1Vrms
1µF
4.7µF
M
1µF
4.7µF
IOUT
IOUT
Measurement setup for Figure 10, 20
Measurement setup for Figure 11, 21
14/30
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Measurement Circuit (BD7xxL2FP3-C Series) SOT223-4(F)
FIN
FIN
FIN
BD7xxL2FP3-C
BD7xxL2FP3-C
BD7xxL2FP3-C
1:VCC
2:GND
3:VOUT
1uF
1:VCC
2:GND
3:VOUT
1uF
4.7uF
1:VCC
2:GND
3:VOUT
4.7uF
1uF
Measurement setup for Figure 5, 14, 15, 24
Measurement setup for
Figure 6, 7, 12, 13, 16, 17, 22, 23
4.7uF
Measurement setup for Figure 8, 18
FIN
FIN
FIN
BD7xxL2FP3-C
BD7xxL2FP3-C
BD7xxL2FP3-C
1:VCC
2:GND
1:VCC
3:VOUT
2:GND
3:VOUT
1:VCC
2:GND
3:VOUT
1Vrms
4.7uF
1uF
IOUT
Measurement setup for Figure 9, 19
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
M
1uF
4.7uF
IOUT
Measurement setup for Figure 10, 20
15/30
4.7uF
IOUT
1uF
Measurement setup for Figure 11, 21
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Selection of Components Externally Connected
・VCC pin
Insert capacitors with a capacitance of 0.1μF or higher between the VCC and GND pin. Choose the capacitance
according to the line between the power smoothing circuit and the VCC pin. Selection of the capacitance also
depends on the application. Verify the application and allow for sufficient margins in the design. We recommend
using a capacitor with excellent voltage and temperature characteristics.
・Output pin capacitor
In order to prevent oscillation, a capacitor needs to be placed between the output pin and GND pin. We recommend
using a capacitor with a capacitance of 4.7μF or higher. Electrolytic, tantalum and ceramic capacitors can be used.
When selecting the capacitor ensure that the capacitance of 4.7μF or higher is maintained at the intended applied
voltage and temperature range. Due to changes in temperature the capacitor’s capacitance can fluctuate possibly
resulting in oscillation. For selection of the capacitor refer to the IOUT vs. ESR data. The stable operation range
given in the reference data is based on the standalone IC and resistive load. For actual applications the stable
operating range is influenced by the PCB impedance, input supply impedance and load impedance. Therefore
verification of the final operating environment is needed.
When selecting a ceramic type capacitor, we recommend using X5R, X7R or better with excellent temperature and
DC-biasing characteristics and high voltage tolerance.
Also, in case of rapidly changing input voltage and load current, select the capacitance in accordance with verifying
that the actual application meets with the required specification.
●Measurement setup
FIN
FIN
8:VCC
CIN
7:N.C.
6:N.C.
5:GND
1:VCC
1:VCC
1:VOUT 2:N.C.
3:N.C.
2:N.C.
2:GND
3:VOUT
3:VOUT
4:N.C.
ESR
COUT
BD7xxL2FP3-C
BD7xxL2FP-C
BD7xxL2EFJ-C
BD7xxU2EFJ-C
IOUT
HTSOP-J8
COUT
TO252-3
○Condition
VCC=13.5V
CIN=0.1μF
4.7µF < COUT < 100µF
Ta=-40 < Ta < +125℃
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
CIN
ESR
CIN
16/30
IOUT
ESR
COUT
IOUT
SOT223-4(F)
○Condition
VCC=13.5V
CIN=0.1µF
4.7µF < COUT < 100µF
Ta=-40 < Ta < +125℃
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Power Dissipation
■HTSOP-J8
5.0
Power Dissipation: Pd[W]
4.0
IC mounted on ROHM standard board based on JEDEC.
① : 1 - layer PCB
(Copper foil area on the reverse side of PCB: 0 mm x 0 mm)
Board material: FR4
Board size: 114.3 mm x 76.2 mm x 1.57 mmt
Mount condition: PCB and exposed pad are soldered.
Top copper foil: ROHM recommended
footprint + wiring to measure, 2 oz. copper.
②3.67 W
3.0
2.0
①0.96 W
1.0
0.0
0
25
50
75
100
125
150
Ambient Temperature: Ta [ C]
Figure 25. HTSOP-J8 Package Data
② : 4 - layer PCB
(2 inner layers and Copper foil area on the reverse side of PCB:
74.2 mm x 74.2 mm)
Board material: FR4
Board size: 114.3 mm x 76.2 mm x 1.60 mmt
Mount condition: PCB and exposed pad are soldered.
Top copper foil: ROHM recommended
footprint + wiring to measure, 2 oz. copper.
2 inner layers copper foil area of PCB
: 74.2 mm x 74.2 mm, 1 oz. copper.
Copper foil area on the reverse side of PCB
: 74.2 mm x 74.2 mm, 2 oz. copper.
Condition①: θJA = 130 C / W, ΨJT (top center) = 15 °C / W
Condition②: θJA = 34 C / W, ΨJT (top center) = 7 °C / W
■TO252-3
10.0
IC mounted on ROHM standard board based on JEDEC.
① : 1 - layer PCB
(Copper foil area on the reverse side of PCB: 0 mm x 0 mm)
Board material: FR4
Board size: 114.3 mm x 76.2 mm x 1.57 mmt
Mount condition: PCB and exposed pad are soldered.
Top copper foil: ROHM recommended
footprint + wiring to measure, 2 oz. copper.
Power Dissipation: Pd[W]
8.0
6.0
②5.43 W
4.0
2.0
0.0
①0.92 W
0
25
50
75
100
125
Ambient Temperature: Ta [ C]
Figure 26. TO252-3 Package Data
150
② : 4 - layer PCB
(2 inner layers and Copper foil area on the reverse side of PCB:
74.2 mm x 74.2 mm)
Board material: FR4
Board size: 114.3 mm x 76.2 mm x 1.60 mmt
Mount condition: PCB and exposed pad are soldered.
Top copper foil: ROHM recommended
footprint + wiring to measure, 2 oz. copper.
2 inner layers copper foil area of PCB
: 74.2 mm x 74.2 mm, 1 oz. copper.
Copper foil area on the reverse side of PCB
: 74.2 mm x 74.2 mm, 2 oz. copper.
Condition①: θJA = 136 C / W, ΨJT (top center) = 17 °C / W
Condition②: θJA = 23 °C / W, ΨJT (top center) = 3 °C / W
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TSZ22111・15・001
17/30
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
■SOT223-4(F)
2.0
IC mounted on ROHM standard board based on JEDEC.
① : 1 - layer PCB
(Copper foil area on the reverse side of PCB: 0 mm x 0 mm)
Board material: FR4
Board size: 114.3 mm x 76.2 mm x 1.57 mm
Mount condition: PCB and exposed pad are soldered.
Top copper foil: ROHM recommended
footprint + wiring to measure, 2 oz. copper.
Power Dissipation: Pd[W]
②1.76 W
1.5
1.0
①0.76 W
0.5
0.0
0
25
50
75
100
125
Ambient Temperature: Ta [ C]
Figure 27. SOT223-4(F) Package Data
150
② : 4 - layer PCB
(2 inner layers and Copper foil area on the reverse side of PCB:
74.2 mm x 74.2 mm)
Board material: FR4
Board size: 114.3 mm x 76.2 mm x 1.60 mm
Mount condition: PCB and exposed pad are soldered.
Top copper foil: ROHM recommended
footprint + wiring to measure, 2 oz. copper.
2 inner layers copper foil area of PCB
: 74.2 mm x 74.2 mm, 1 oz. copper.
Copper foil area on the reverse side of PCB
: 74.2 mm x 74.2 mm, 2 oz. copper.
Condition①: θJA = 164 C / W, ΨJT (top center) = 20 °C / W
Condition②: θJA = 71 C / W, ΨJT (top center) = 14 °C / W
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TSZ22111・15・001
18/30
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
Refer to the heat mitigation characteristics illustrated in Figure 25 to Figure 27 when using the IC in an environment of Ta≥25°C.
The characteristics of the IC are greatly influenced by the operating temperature, and it is necessary to operate under the
maximum junction temperature Timax.
Even if the ambient temperature Ta is at 25°C it is possible that the junction temperature Tj reaches high temperatures.
Therefore, the IC should be operated within the power dissipation range.
The following method is used to calculate the power consumption Pc (W)
Pc=(VCC-VOUT)×IOUT+VCC×Ib
Power dissipation Pd ≥ Pc
VCC
VOUT
IOUT
Ib
Ishort
The load current Lo is obtained by operating the IC within the power dissipation range.
IOUT ≤
Pd-VCC×Ib
VCC-VOUT
: Input voltage
: Output voltage
: Load current
: Bias current
: Shorted current
(Refer to Figure 11 and Figure 21 for the Ib)
Thus, the maximum load current IOUTmax for the applied voltage VCC can be calculated during the thermal design process.
●HTSOP-J8
■Calculation example 1) with Ta=125°C, VCC=13.5V, VOUT=3.3V
IOUT ≤
0.73-13.5×Ib
10.2
IOUT ≤ 71.5mA (Ib: 6µA)
θja=34°C/W → -29.4mW/°C
25°C=3.67W → 125°C=0.73W
At Ta=125°C with Figure 25 ② condition, the calculation shows that ca 71.5mA of output current is possible at 10.2V potential
difference across input and output.
■Calculation example 2) with Ta=125°C, VCC=13.5V, VOUT=5.0V
IOUT ≤
0.73-13.5×Ib
8.5
IOUT ≤ 85.8mA (Ib: 6µA)
θja=34°C/W → -29.4mW/°C
25°C=3.67W → 125°C=0.73W
At Ta=125°C with Figure 25 ② condition, the calculation shows that ca 85.8mA of output current is possible at 8.5V potential
difference across input and output.
The thermal calculation shown above should be taken into consideration during the thermal design in order to keep the whole
operating temperature range within the power dissipation range.
In the event of shorting (i.e. VOUT and GND pins are shorted) the power consumption Pc of the IC can be calculated as follows:
Pc=VCC×(Ib+Ishort)
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TSZ22111・15・001
(Refer to Figure 8 and Figure 18 for the Ishort)
19/30
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●TO252-3
■Calculation example 3) with Ta=125°C, VCC=13.5V, VOUT=3.3V
IOUT ≤
1.08-13.5×Ib
10.2
IOUT ≤ 105mA (Ib: 6µA)
θja=23°C/W → -43.5mW/°C
25°C=5.43W → 125°C=1.08W
At Ta=125°C with Figure 26 ② condition, the calculation shows that ca 105mA of output current is possible at 10.2V potential
difference across input and output.
■Calculation example 4) with Ta=125°C, VCC=13.5V, VOUT=5.0V
IOUT ≤
1.08-13.5×Ib
8.5
θja=23°C/W → -43.5mW/°C
25°C=5.43W → 125°C=1.08W
IOUT ≤ 127mA (Ib: 6µA)
At Ta=125°C with Figure 26 ② condition, the calculation shows that ca 127mA of output current is possible at 8.5V potential
difference across input and output.
The thermal calculation shown above should be taken into consideration during the thermal design in order to keep the whole
operating temperature range within the power dissipation range.
In the event of shorting (i.e. VOUT and GND pins are shorted) the power consumption Pc of the IC can be calculated as follows:
Pc=VCC×(Ib+Ishort)
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TSZ22111・15・001
(Refer to Figure 8 and Figure 18 for the Ishort)
20/30
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●SOT223-4(F)
■Calculation example 5) with Ta=125°C, VCC=13.5V, VOUT=3.3V
IOUT ≤
0.35-13.5×Ib
10.2
IOUT ≤ 34.3mA (Ib: 6µA)
θja=71°C/W → -14.1mW/°C
25°C=1.76W → 125°C=0.35W
At Ta=125°C with Figure 27 ② condition, the calculation shows that ca 34.3mA of output current is possible at 10.2V potential
difference across input and output.
■Calculation example 6) with Ta=125°C, VCC=13.5V, VOUT=5.0V
IOUT ≤
0.35-13.5×Ib
8.5
IOUT ≤ 41.1mA (Ib: 6µA)
θja=71°C/W → -14.1mW/°C
25°C=1.76W → 125°C=0.35W
At Ta=125°C with Figure 27 ② condition, the calculation shows that ca 41.1mA of output current is possible at 8.5V potential
difference across input and output.
The thermal calculation shown above should be taken into consideration during the thermal design in order to keep the whole
operating temperature range within the power dissipation range.
In the event of shorting (i.e. VOUT and GND pins are shorted) the power consumption Pc of the IC can be calculated as follows:
Pc=VCC×(Ib+Ishort)
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
(Refer to Figure 8 and Figure 18 for the Ishort)
21/30
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Application Examples
・Applying positive surge to the VCC pin
If the possibility exists that surges higher than 50V will be applied to the VCC pin, a zenar diode should be placed
between the VCC pin and GND pin as shown in the figure below.
FIN
FIN
8:VCC
7:N.C.
6:N.C.
5:GND
BD7xxL2EFJ-C
BD7xxU2EFJ-C
CIN
1:VCC
1:VCC
1:VOUT 2:N.C.
COUT
3:N.C.
BD7xxL2FP3-C
BD7xxL2FP-C
2:N.C.
2:GND
3:VOUT
3:VOUT
4:N.C.
IOUT
CIN
HTSOP-J8
CIN
COUT
TO252-3
COUT
IOUT
SOT223-4(F)
・Applying negative surge to the VCC pin
If the possibility exists that negative surges lower than the GND are applied to the VCC pin, a Shottky diode should be
place between the VCC pin and GND pin as shown in the figure below.
FIN
FIN
8:VCC
CIN
7:N.C.
6:N.C.
5:GND
BD7xxL2EFJ-C
BD7xxU2EFJ-C
BD7xxL2FP3-C
BD7xxL2FP-C
1:VCC
1:VCC
1:VOUT 2:N.C.
COUT
3:N.C.
2:N.C.
2:GND
3:VOUT
3:VOUT
4:N.C.
IOUT
CIN
HTSOP-J8
CIN
COUT
TO252-3
COUT
IOUT
SOT223-4(F)
・Implementing a protection diode
If the possibility exists that a large inductive load is connected to the output pin resulting in back-EMF at time of startup
and shutdown, a protection diode should be placed as shown in the figure below.
VOUT
●I/O equivalence circuits
○Input terminal
○Output terminal *inside of () shows 5V
VCC
VCC
7.5MΩ
(TYP)
5kΩ(TYP)
VOUT
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TSZ22111・15・001
22/30
5.575MΩ
(8.96MΩ)
(TYP)
R2
1.0MΩ
(TYP)
R1
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Operational Notes
1) Absolute maximum ratings
Exceeding the absolute maximum rating for supply voltage, operating temperature or other parameters can result in
damages to or destruction of the chip. In this event it also becomes impossible to determine the cause of the damage
(e.g. short circuit, open circuit, etc.). Therefore, if any special mode is being considered with values expected to exceed
the absolute maximum ratings, implementing physical safety measures, such as adding fuses, should be considered.
2) The electrical characteristics given in this specification may be influenced by conditions such as temperature, supply
voltage and external components. Transient characteristics should be sufficiently verified.
3) GND electric potential
Keep the GND pin potential at the lowest (minimum) level under any operating condition. Furthermore, ensure that,
including the transient, none of the pin’s voltages are less than the GND pin voltage.
4) GND wiring pattern
When both a small-signal GND and a high current GND are present, single-point grounding (at the set standard point) is
recommended. This in order to separate the small-signal and high current patterns and to ensure that voltage changes
stemming from the wiring resistance and high current do not cause any voltage change in the small-signal GND. Similarly,
care must be taken to avoid wiring pattern fluctuations in any connected external component GND.
5) Inter-pin shorting and mounting errors
Ensure that when mounting the IC on the PCB the direction and position are correct. Incorrect mounting may result in
damaging the IC. Also, shorts caused by dust entering between the output, input and GND pin may result in damaging
the IC.
6) Inspection using the set board
The IC needs to be discharged after each inspection process as, while using the set board for inspection, connecting a
capacitor to a low-impedance pin may cause stress to the IC. As a protection from static electricity, ensure that the
assembly setup is grounded and take sufficient caution with transportation and storage. Also, make sure to turn off the
power supply when connecting and disconnecting the inspection equipment.
7) Thermal design
The power dissipation under actual operating conditions should be taken into consideration and a sufficient margin
should be allowed for in the thermal design. On the reverse side of the package this product has an exposed heat pad for
improving the heat dissipation. Use both the front and reverse side of the PCB to increase the heat dissipation pattern as
far as possible. The amount of heat generated depends on the voltage difference across the input and output, load
current, and bias current. Therefore, when actually using the chip, ensure that the generated heat does not exceed the
Pd rating. Should by any condition the maximum junction temperature rating be exceeded by the temperature increase of
the chip, it may result in deterioration of the properties of the chip. The thermal impedance in this specification is based
on recommended PCB and measurement condition by JEDEC standard. Verify the application and allow sufficient
margins in the thermal design.
Tjmax: maximum junction temperature=150°C, Ta: ambient temperature (°C), θja: junction-to-ambient thermal
resistance (°C/W), Pd: power dissipation rating (W), Pc: power consumption (W), VCC: input voltage,
VOUT: output voltage, IOUT: load current, Ib: bias current
Power dissipation rating
Power consumption
Pd (W)=(Tjmax-Ta)/θja
Pc (W)=(VCC-VOUT)×IOUT+VCC×Ib
8) Rapid variation in VCC voltage and load current
In case of a rapidly changing input voltage, transients in the output voltage might occur due to the use of a MOSFET as
output transistor. Although the actual application might be the cause of the transients, the IC input voltage, output current
and temperature are also possible causes. In case problems arise within the actual operating range, use
countermeasures such as adjusting the output capacitance.
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TSZ22111・15・001
23/30
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
9) Minute variation in output voltage
In case of using an application susceptible to minute changes to the output voltage due to noise, changes in input and
load current, etc., use countermeasures such as implementing filters.
10) Overcurrent protection circuit
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This protection
circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in
applications characterized by continuous operation or transitioning of the protection circuit.
11) Thermal shutdown (TSD)
This IC incorporates and integrated thermal shutdown circuit to prevent heat damage to the IC. Normal operation should
be within the power dissipation rating, if however the rating is exceeded for a continued period, the junction temperature
(Tj) will rise and the TSD circuit will be activated and turn all output pins OFF. After the Tj falls below the TSD threshold
the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
12) In some applications, the VCC and pin potential might be reversed, possibly resulting in circuit internal damage or
damage to the elements. For example, while the external capacitor is charged, the VCC shorts to the GND. Use a
capacitor with a capacitance with less than 1000μF. We also recommend using reverse polarity diodes in series or a
bypass between all pins and the VCC pin.
13) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a
variety of parasitic elements.
For example, in case a resistor and a transistor are connected to the pins as shown in the figure below then:
○ The P/N junction functions as a parasitic diode when GND > pin A for the resistor, or GND > pin B for the transistor.
○ Also, when GND > pin B for the transistor (NPN), the parasitic diode described above combines with the N layer of the
other adjacent elements to operate as a parasitic NPN transistor.
Parasitic diodes inevitably occur in the structure of the IC. Their operation can result in mutual interference between
circuits and can cause malfunctions and, in turn, physical damage to or destruction of the chip. Therefore do not employ
any method in which parasitic diodes can operate such as applying a voltage to an input pin that is lower than th e
(P substrate) GND.
Resistor
Transistor (NPN)
Pin A
Pin B
C
Pin A
N
P+
N
P
N
P+
N
Parasitic
Element
N
P+
GND
E
N P
N
P+
B
N
C
E
Parasitic
Element
P Substrate
P Substrate
Parasitic
Element
Pin B
B
Parasitic
Element
GND
GND
GND
Parasitic elements
or Transistors
Figure 28. Example of the Parasitic Device Structures
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TSZ22111・15・001
24/30
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Physical Dimension, Tape and Reel Information
Package Name
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TSZ22111・15・001
HTSOP-J8
25/30
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
Package Name
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
TO252-3
26/30
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19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
Package Name
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
SOT223-4
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19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
Package Name
SOT223-4F
Direction of Feed
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
28/30
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Marking Diagrams
HTSOP-J8
TO252-3
TO252-3
(TOP VIEW)
HTSOP-J8 (TOP VIEW)
Part Number Marking
Part Number Marking
LOT Number
1PIN MARK
LOT Number
SOT223-4(F)
SOT223-4(F) (TOP VIEW)
Part Number Marking
LOT Number
1PIN
Orderable
Part Number
Part Number Marking
BD733L2EFJ-CE2
D733L2
BD733U2EFJ-CE2
D733U2
BD733L2FP-CE2
BD733L2
BD733L2FP3-CE2
BD733L2
SOT223-4(F)
BD750L2EFJ-CE2
D750L2
HTSOP-J8
BD750U2EFJ-CE2
D750U2
BD750L2FP-CE2
BD750L2
BD750L2FP3-CE2
BD750L2
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
Output Voltage (V)
Package
HTSOP-J8
3.3
5.0
HTSOP-J8
TO252-3
HTSOP-J8
TO252-3
SOT223-4(F)
29/30
TSZ02201-0G1G0AN00010-1-2
19.Nov.2021 Rev.008
BD7xxL2EFJ-C BD7xxU2EFJ-C BD7xxL2FP-C BD7xxL2FP3-C
●Revision History
Date
Revision
21.Aug.2012
001
New Release
24.Sep.2012
002
New Release TO252-3 package.
14.Mar.2013
003
30.Sep.2013
004
01.May.2014
005
14.Jul.2014
006
17.Feb.2017
007
19.Nov.2021
008
Changes
Page 1.Series name is changed.
Page 6. Append Thermal Resistance θja, θjc.
Page 8. Figure 5, Page 9. Figure 11 All Quiescent current are integrated into Bias Current.
Page 10. Figure 14, Page 11. Figure 15 All Quiescent current are integrated into Bias Current.
Page 12. Figure 21, Page 13. Figure 24 All Quiescent current are integrated into Bias Current.
Page 17, 18. Figure 25, 26, 27, 28
Power Dissipation is changed to be compliant with JEDEC standard.
Page 19, 20. Calculation examples are changed.
Page 25. “Application example” is deleted.
Figure 29 “ Example of the Parasitic Device Structures” is renewed.
AEC-Q100 Qualified
Page 28. Physical Quantity is changed.
TO263-3F is changed to the individual registration.
Page 16. Output capacitor range was changed.
Page 28. HTSOP-J8 Marking Diagrams is changed.
Improve the description, SOT223-4F to SOT223-4(F).
Page 1. AEC-Q100 Grade postscript.
Page 6. Thermal resistance is changed for JESD51-2A.
Page 10. Revised Figure 13.
Page 17, 18. Value of the power dissipation is changed.
Page 23. Revised 7) in Operational Notes with change of Thermal resistance.
Page 27. Add Physical Dimension, Tape and Reel Information of SOT223-4 package.
Add BD7xxU2EFJ-C Series.
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19.Nov.2021 Rev.008
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.004
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.004
Datasheet
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3.
The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001