Datasheet
Power Management IC for Cell phone・Smart Phone
Power Management IC for Near Field
Communication LSI
BD7602GUL
Summary
Key Parameters
BD7602GUL is a Power Management IC for mobile
device with NFC IC.
Each LDO output is controlled by 2 line serial interface
which supports I2C Bus protocol.
This helps to save space to integrate all PMIC for NFC
IC.
Features
Low current consumption 10µA (Typ)
2 Channel LDO
2.7V UVLO detection
1 Channel GPO
Thermal Shut Down function
2 line serial interface which supports I2C bus
protocol.
Input voltage range ：
Output voltage(LDO1)：
Output voltage range(LDO2)：
Output current(LDO1)：
Output current(LDO2)：
VBAT operating current：
Operating temperature range：
PACKAGE
2.7V ～ 5.5V
3.0V(Typ)
2.8V ～ 3.3V
100mA(Max)
150mA(Max)
10μA (Typ)
-35°C ～ +85°C
W (Typ) x D (Typ) x H (Max)
1.60mm x 1.60mm x 0.57mm
VCSP50L1C
USE
Smart Phones
Cell Phones
Mobile device which has NFC IC
VCSP50L1C
Application Schematic
1μF
VBAT
Voltage
Detect
(2.7V)
LDO1
VOUT1
3.0V
100mA
TSD
LDO2
VOUT2
2.8V～3.3V
150mA
DVDD
2.2KΩ
VREF
DPREF
4.7uF
REFC
(IC Internal
Power）
DVDD
4.7uF
0.1μF
2.2KΩ
SCL
SDA
I2C
SLAVE
GPO
GPO
REGISTER
GND
Figure 1. Application schematic.
○Product structure : Silicon monolithic integrated circuit. ○This product has no designed protection against radioactive rays.
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BD7602GUL
Pinout Diagram
1
2
3
A
VOUT1
VBAT
VOUT2
C
REFC
SCL
SDA
B
GND
GPO
DVDD
B
GND
GPO
DVDD
C
REFC
SCL
SDA
A
VOUT1
VBAT
VOUT2
1
2
Top View
3
Bottom View
Figure 2. Pinout Diagram
Pin Descriptions
Terminal
Number
Name
SiA1
VOUT1
A2
VBAT
A3
VOUT2
B1
B2
Diode
Function
+side
-side
LDO1 OUTPUT
VBAT
GND
POWER Supply
-
GND
LDO2 OUTPUT
VBAT
GND
GND
Ground
VBAT
-
GPO
GPO OUTPUT
-
GND
B3
DVDD
I2C Serial Interface I/O Power supply
-
GND
C1
REFC
Power for logic circuit.
VBAT
GND
C2
SCL
I2C serial interface CLK input
DVDD
GND
C3
SDA
I2C serial interface DATA inout
DVDD
GND
IC Block Diagram
VBAT
Voltage
Detect
(2.7V)
LDO1
3.0V
100mA
TSD
LDO2
2.8V～3.3V
150mA
VREF
DPREF
(IC Internal
Power）
VOUT1
VOUT2
REFC
DVDD
SCL
SDA
I2C
SLAVE
GPO
GPO
REGISTER
GND
Figure 3. Block Diagram
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BD7602GUL
Block Explanation
The output voltage for LDO1 is 3V (Typ) with an output current capability of 100mA (Max). UVLO Function is released when
the IC starts by turning the power ON (VBAT).
LDO1 turns OFF when UVLO function is enabled.
I2C controller can also be used to turn off the IC. When LDO1 turns off, VOUT1 automatically connects with 100Ω
discharge resistance.
VOUT1 needs 4.7uF external capacitor.
LDO2 has an adjustable output voltage from 2.8V to 3.3V.The initial value is 3V (Typ) with an output current capability of
150mA (Max). UVLO Function is released when the IC starts by turning the power ON (VBAT).
LDO2 turns OFF when UVLO function is enabled.
I2C Controller is used to adjust output voltage from 2.8V to 3.3V (8steps). It is also used to turn off the IC.
When LDO2 turns off, VOUT2 automatically connects with 100Ω discharge resistance.
VOUT2 needs 4.7uF external capacitor.
GPO is a logic output pin from register and could be used as enable or disable signal. The register can also set its output to
CMOS type or NMOS type with an output current capability of 3mA.
Initial condition of GPO is disabled or in HI-Z state.
Maximum pull up voltage during NMOS output is equal to VBAT
I2C SLAVE REGISTER is the function for I2C serial interface. Input voltage level is DVDD.
Voltage Detect for VBAT UVLO is 2.7V (Typ). When UVLO is detected, registers are reset.
Also at this time VREF, LDO1 and LDO2 outputs turn off.
VREF is equal to 2.5V (Typ). It powers the internal circuit and cannot be used externally. UVLO Function is released when
the IC starts by turning power ON (VBAT). When UVLO function is detected, IC turns off.
REFC needs 0.1uF external capacitor.
DPREF is reference voltage for LDO VREF and Voltage Detect.
TSD is for thermal shut down function. This prevents damaging and breaking of IC. When IC„s internal temperature rise up
to a certain temperature, LDO1 and LDO2 are automatically turned off. When temperature goes down, LDO1 and LDO2
automatically return to its normal operation.
In this case, register doesn‟t need to be reset.
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BD7602GUL
Absolute Maximum Rating(s) (Ta = 25°C)
Parameter
Symbol
Value
Unit
Power Supply (VBAT)
VINVBAT
-0.3 ～ +7.0
V
Power Supply (DVDD)
VINDVDD
-0.3 ～ +7.0
Power Dissipation
Pd
0.66
V
(Note 1)
W
Topr
-35 ～ +85
°C
Storage Temperature
Tstg
-55 ～+150
°C
Junction Temperature
Tjmax
150
°C
Other Pin Voltage
VOTH
-0.3 ～ +7.0
V
Operating Temperature Range
(Note 1) Derate by 5.2mW/℃when operating above Ta=25℃. (Mounted on a ROHM specification board.50mm x 58mm)
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Condition (Ta= -35°C to +85°C)
Parameter
Symbol
MIN
TYP
MAC
UNIT
Power Supply(VBAT)
VBAT
2.7
3.6
5.5
V
Power Supply(DVDD)
VDVDD
1.70
1.80
3.50
V
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Electrical Characteristic (Unless otherwise specified, VBAT=3.6V, VDVDD=1.8V, Ta=25°C)
Parameter
Symbol
MIN
VBAT Circuit Current(VBAT=3.6V)
ICCBAT
-
VBAT Circuit Current(VBAT=3.1V)
ICCBAT
TYP
MAX
UNIT
Condition
Circuit Current
DVDD Circuit Current
10
18
µA
LDO1,2: No Load
9.5
15
µA
LDO1,2: No Load
ICCDVDD
-
0
1
µA
VUVLO
2.64
2.70
2.76
V
Voltage Detector
Detect Voltage
Detect Voltage Hysteresis
VREF Output Voltage
VUVLOHYS
50
100
150
mV
VOREF
2.45
2.50
2.55
V
Down Sweep
LDO1
Output Voltage
VOUT1
2.94
3.00
3.06
V
IOUT1MAX
100
-
-
mA
Line Regulation
ΔVIS1
-
2
-
mV
VBAT=3.3～4.5V, IOUT1= 50mA
Load Regulation
ΔVLS1
-
20
-
mV
PSRR
PSRR1
-
45
-
dB
RDIS1
-
100
-
Ω
IOUT1= 1～100mA
VBAT=4.2V+0.2Vpp,
IOUT1= 50mA
fr=120Hz,BW=20～20kHz
VBAT=2.5V
Output Voltage
VOUT2
2.94
3.00
3.06
V
IOUT1= 50mA
Variable Output Voltage
VO2RNG
2.80
-
3.30
V
Output Max Current
IOUT2MAX
150
-
-
mA
Line Regulation
ΔVIS2
-
2
-
mV
Load Regulation
ΔVLS2
-
20
-
mV
PSRR
PSRR2
-
45
-
dB
RDIS2
-
100
-
Ω
VBAT=VOUT2+0.3V～4.5V,
IOUT2= 50mA
IOUT2= 1～150mA
VBAT=4.2V+0.2Vpp,
IOUT2= 50mA
fr=120Hz,BW=20～20kHz
VBAT=2.5V
V
ISINKGPO= 3mA
V
ISOURCEGPO= 3mA
Output Max Current
Discharge Resistance
IOUT1= 50mA
LDO2
Discharge resistance
GPO
-
0.3+
VOUT1
0.4
-
-
VBAT
V
-0.3
-
0.4
V
ISOURCEGPO= 3mA
-1
0
1
µA
Terminal voltage=VOUT1, 0V
VIH
0.75×
VDVDD
-
Input L Level (SCL, SDA)
VIL
-0.3
-
Input Leak Current
ILK
-1
VOL
-0.3
Output H Level
VOHGPO
Output L Level
VOLGPO
NMOS output pulled up max voltage
VMXGPON
NMOS output L level
VOLGPON
NMOS output leak current
ILKGPON
Input H Level (SCL, SDA)
0.8×
VOUT1
-0.3
-
I2Cserial interface
(SCL, SDA)
Output L Level (SDA)
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0
0.3+
VDVDD
0.25×
VDVDD
1
µA
Terminal voltage=VDVDD, 0V
-
0.4
V
ISOURCE= 6mA
V
V
TSZ02011-0Q4Q0AB00010-1-2
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BD7602GUL
Electrical Characteristic (Unless otherwise specified, VBAT=3.6V, VDVDD=1.8V, Ta=-35～85°C( Note2))
Parameter
Symbol
MIN
TYP
MAX
UNIT
Condition
ICCBAT
-
10
18
µA
LDO1,2: No Load
LDO1,2: No Load
Circuit Current
VBAT Circuit Current(VBAT=3.6V)
VBAT Circuit Current(VBAT=3.1V)
DVDD Circuit Current
ICCBAT
-
9.5
15
µA
ICCDVDD
-
0
1
µA
Voltage Detector
Detect Voltage
Detect Voltage Hysteresis
VREF Output Voltage
VUVLO
2.6
2.7
2.8
V
VUVLOHYS
50
100
150
mV
VOREF
2.4
2.5
2.6
V
VOUT1
2.88
3
3.12
V
Down Sweep
LDO1
Output Voltage
Output Max Current
IOUT1= 50mA
IOUT1MAX
100
-
-
mA
Line Regulation
ΔVIS1
-
2
-
mV
VBAT=3.3～4.5V, IOUT1= 50mA
Load Regulation
ΔVLS1
-
20
-
mV
PSRR
PSRR1
-
45
-
dB
RDIS1
-
100
-
Ω
IOUT1= 1～100mA
VBAT=4.2V+0.2Vpp,
IOUT1= 50mA
fr=120Hz,BW=20～20kHz
VBAT=2.5V
VOUT2
2.88
3
3.12
V
IOUT1= 50mA
Discharge Resistance
LDO2
Output Voltage
Variable Output Voltage
VO2RNG
2.8
-
3.3
V
Output Max Current
IOUT2MAX
150
-
-
mA
Line Regulation
ΔVIS2
-
2
-
mV
Load Regulation
ΔVLS2
-
20
-
mV
PSRR
PSRR2
-
45
-
dB
RDIS2
-
100
-
Ω
VBAT=VOUT2+0.3V～4.5V,
IOUT2= 50mA
IOUT2= 1～150mA
VBAT=4.2V+0.2Vpp,
IOUT2= 50mA
fr=120Hz,BW=20～20kHz
VBAT=2.5V
V
ISINKGPO= 3mA
V
ISOURCEGPO= 3mA
Discharge resistance
GPO
Output H Level
VOHGPO
Output L Level
VOLGPO
0.8×
VOUT1
-0.3
-
0.3+
VOUT1
0.4
NMOS output pulled up max voltage
VMXGPON
-
-
VBAT
NMOS output L level
VOLGPON
NMOS output leak current
ILKGPON
-0.3
-
0.4
V
ISOURCEGPO= 3mA
-1
0
1
µA
Terminal voltage=VOUT1, 0V
Input H Level (SCL, SDA)
VIH
0.75×
VDVDD
-
Input L Level (SCL, SDA)
VIL
-0.3
-
ILK
-1
VOL
-0.3
-
V
I2Cserial interface
Input Leak Current
(SCL, SDA)
Output L Level (SDA)
0
0.3+
VDVDD
0.25×
VDVDD
1
µA
Terminal voltage=VDVDD, 0V
-
0.4
V
ISOURCE= 6mA
V
V
(Note2)：These are guaranteed by design engineering from -35℃ to 85℃.
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BD7602GUL
Characteristic Data(Reference Data)
50
50
45
45
40
Circuit Current : ICCVBAT[μA]
Circuit Current : ICCVBAT[uA]
40
35
30
25
20
15
35
30
25
20
15
10
10
5
5
0
0
-50
0
50
0
100
2
Temp : Ta[℃]
Figure 4. Circuit Current VS temperature
(VBAT=3.6V,Ta=-35℃~85℃)
6
Figure 5. Input Current VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃)
4
4
3
3
Output Voltage : VOUT2 [V]
Output Voltage : VOUT1「Ｖ］
4
Input Voltage : V BAT[V]
2
Io=1mA
1
2
Io=1mA
1
Io=30mA
Io=30mA
Io=50mA
Io=50mA
Io=100mA
Io=100mA
0
0
0
2
4
6
0
Input Voltage : V BAT[V]
4
6
Input Voltage : VBAT[V]
Figure 6. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃)
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2
Figure 7. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=2.8V)
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Characteristic Data(Reference Data)
-continuance
4
3
3
Output Voltage : V OUT2 [V]
Output Voltage : VOUT2 [V]
VOUT2=2.9V
4
2
Io=1mA
1
VOUT2=2.95V
2
Io=1mA
1
Io=30mA
Io=30mA
Io=50mA
Io=50mA
Io=100mA
0
Io=100mA
0
0
0
2
4
2
6
4
6
Input Voltage : V BAT[V]
Input Voltage : V BAT[V]
Figure 8. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=2.9V)
VOUT2=3.0V
4
VOUT2=3.05V
4
3
3
Output Voltage : V OUT2 [V]
Output VOltage : VOUT2 [V]
Figure 9. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=2.95V)
2
Io=1mA
1
2
Io=1mA
1
Io=30mA
Io=30mA
Io=50mA
Io=50mA
Io=100mA
0
0
2
4
0
Input Voltage : VBAT[V]
2
4
6
Input Voltage : VBAT[V]
Figure 10. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=3.0V)
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Io=100mA
0
6
Figure 11. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=3.05V)
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Characteristic Data(Reference Data)
-continuance
VOUT2=3.2V
4
3
3
Output Voltage : VOUT2 [V]
Output Voltaqge : VOUT2 [V]
VOUT2=3.1V
4
2
Io=1mA
1
Io=30mA
2
Io=1mA
1
Io=50mA
Io=30mA
Io=100mA
Io=50mA
0
0
2
4
Io=100mA
0
6
0
Input Voltage : VBAT[V]
2
4
6
Input Voltage : VBAT[V]
Figure 12. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=3.1V)
Figure 13. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=3.2V)
VOUT2=3.3V
4
Output Voltage : V OUT2 [V]
3
2
Io=1mA
1
Io=30mA
Io=50mA
Io=100mA
0
0
2
4
6
Input Volatage : VBAT[V]
Figure 14. Output Voltage VS Input Voltage
(VBAT=0V~5.5V,Ta=25℃,Vout=3.3V)
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BD7602GUL
Characteristic Data(Reference Data)
-continuance
3.4
3.2
3.3
VOUT2=3.3V
Output Voltage : VOUT2 [V]
Output Voltage : V OUT1 [V]
3.1
3
2.9
VOUT2=3.2V
3.2
VOUT2=3.1V
3.1
VOUT2=3.05V
3
VOUT2=3.0V
VOUT2=2.95V
2.9
VOUT2=2.9V
2.8
VOUT2=2.8V
2.8
-50
0
50
100
2.7
Temp : Ta[℃]
-50
0
300
300
250
250
200
150
VBAT=3.1V
VBAT=3.3V
100
VBAT=3.6V
100
200
150
VBAT=3.1V
VBAT=3.3V
100
VBAT=3.6V
VBAT=3.9V
50
VBAT=3.9V
50
50
Figure 16. Output Voltage VS Temperature
(VBAT=3.6V,Ta=25℃,Io=1mA)
Output Current : IOUT2MAX[mA]
Output Current : IOUT1MAX [mA]
Figure 15. Output Voltage VS Temperature
(VBAT=3.6V,Ta=25℃,Io=1mA)
Temp : Ta[℃]
VBAT=5.5V
VBAT=5.5V
0
0
0
1
2
3
0
4
Figure 17. Output Current VS VOUT1 Voltage
(VBAT=3.6V,Ta=25℃)
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1
2
3
4
VOUT2 Voltage : V OUT2[V]
VOUT1 Voltage : VOUT1 [V]
Figure 18. Output Current VS VOUT2 Voltage
(VBAT=3.6V,Ta=25℃,VOUT2=3.0V)
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Characteristic Data(Reference Data)
-continuance
60
Ripple Rejection : PSRR2[dB]
Ripple Rejection : PSRR1[dB]
60
40
20
Io=1mA
40
20
Io=1mA
Io=50mA
Io=50mA
Io=100mA
Io=100mA
0
0
10
100
1000
10000
100000
10
Frequency : fR[Hz]
1000
10000
100000
Frequency : fR[Hz]
Figure 19. Ripple Rejection VS Frequency
(VBAT=4.2V+0.2Vpp,Cout=4.7μF,fR=120Hz,Ta=25℃)
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100
Figure 20. Ripple Rejection VS Frequency
(VBAT=4.2V+0.2Vpp,Cout=4.7μF,fR=120Hz,Ta=25℃)
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Characteristic Data(Reference Data)
-continuance
VBAT:0.5V/Div
VBAT:0.5V/Div
VOUT1:20mV/Div
VOUT1:20mV/Div
⊿30.83mV
⊿104.17mV
Figure 21. VBAT Response(Rise)
(VBAT=4V→5V,Cout=4.7μF,Ta=25℃,Tf=0.5μs)
Figure 22. VBAT Response(Fall)
(VBAT=5V→4V,Cout=4.7μF,Ta=25℃,Tf=0.5μs)
VBAT:0.5V/Div
VBAT:0.5V/Div
VOUT2:20mV/Div
VOUT2:20mV/Div
⊿112.50mV
⊿30.00mV
Figure 23. VBAT Response(Rise)
(VBAT=4V→5V,Cout=4.7μF,Ta=25℃,Tf=0.5μs)
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Figure 24. VBAT Response(Fall)
(VBAT=5V→4V,Cout=4.7μF,Ta=25℃,Tf=0.5μs)
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BD7602GUL
Characteristic Data(Reference Data)
-continuance
IVOUT1 5mA/Div
IVOUT1 5mA/Div
VOUT1 100mV/Div
VOUT1 100mV/Div
⊿36.00mV
⊿32.00mV
Figure 25. Load Response(Rise)
(VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=1mA→10mA,Tr=0.5μs)
Figure 26. Load Response(Fall)
(VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=10mA→1mA,Tf=0.5μs)
IVOUT2 5mA/Div
IVOUT2 5mA/Div
VOUT2 100mV/Div
VOUT2 100mV/Div
⊿32.00mV
⊿30.00mV
Figure 27. Load Response(Rise)
(VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=1mA→10mA,Tr=0.5μs)
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Figure 28. Load Response(Fall)
(VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=10mA→1mA,Tf=0.5μs)
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BD7602GUL
Characteristic Data(Reference Data)
-continuance
IVOUT1 5mA/Div
IVOUT1 5mA/Div
VOUT1 100mV/Div
VOUT1 100mV/Div
⊿82mV
⊿78mV
Figure 29. Load Response(Rise)
(VBAT=3.6V,Cout=4.7μTa=25℃,F,Iout=50mA→100mA,Tr=0.5μs)
Figure 30. Load Response(Fall)
(VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=100mA→50mA,Tf=0.5μs)
IVOUT2 50mA/Div
IVOUT2 50mA/Div
VOUT2 100mV/Div
VOUT2 100mV/Div
⊿80mV
⊿82mV
Figure 31. Load Response(Rise)
(VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=50mA→100mA,Tr=0.5μs)
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Figure 32. Load Response(Fall)
(VBAT=3.6V,Cout=4.7μF,Ta=25℃,Iout=100mA→50mA,Tf=0.5μs)
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BD7602GUL
Characteristic Data(Reference Data)
-continuance
VBAT 2.0V/Div
VBAT 2.0V/Div
VOUT1 2.0V/Div
VOUT2 2.0V/Div
152mA
164mA
IVBAT 100A/Div
IVBAT 100A/Div
Figure 33. Rush Current
(VBAT=3.6V, LDO_EN=L→H ,Cout=4.7μF,Ta=25℃)
Figure 34. Rush Current
(VBAT=3.6V,LDO_EN=L→H Cout=4.7μF,Ta=25℃)
3.5
Output Voltage : V OUT1 [V]
3
2.5
2
1.5
1
0.5
0
2.5
2.7
2.9
3.1
Input Voltage : VBAT[V]
Figure 35. Output Voltage VS Input Voltage
(VBAT=3.6V,Ta=25℃)
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BD7602GUL
Characteristic Data(Reference Data)
-continuance
300
Output Voltage : V OLGPO[mV]
Output Voltage : V OHGPO[V]
3
2.8
2.6
200
100
0
0
2
4
0
Source Current : ISOURCEGPO[mA]
2
4
Sink Current : ISINKGPO[mA]
Figure 36. Output Voltage VS Source Current(CMOS Output)
(VBAT=3.6V,Ta=25℃)
Figure 37. Output Voltage VS Sink Current(CMOS Output)
(VBAT=3.6V,Ta=25℃)
Output Voltafe : VOLGPON[mV]
300
200
100
0
0
2
4
Sink Current : ISINKGPO[mA]
Figure 38. Output Voltage VS Sink Current(NMOS Output)
(VBAT=3.6V,Ta=25℃)
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16/22
TSZ02011-0Q4Q0AB00010-1-2
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BD7602GUL
I2C Interface Timing Specification
BD7602GUL has 2 line serial interface which supports I2C Bus protocol.
A7
A6
0
0
Table 1. I2C slave address
A5
A4
A3
A2
1
1
1
1
A1
R/W
0
1/0
Figure 39. I2C interface Timing
(Unless otherwise specified, VBAT=3.6V, VDVDD=1.8V, Ta=25°C)
Parameter
Symbol
MIN
TYP
MAX
UNIT
-
-
400
kHz
SCL Clock Frequency
fSCL
START Hold time
tHD:STA
0.6
-
-
µs
SCL of “L” time
tLOW
1.3
-
-
µs
SCL of “H” time
tHIGH
0.6
-
-
µs
Data input hold time
tHD:DAT
0.0
-
-
ns
Data input setup time
tSU:DAT
100
-
-
ns
STOP condition setup time
tSU:STO
0.6
-
-
µs
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17/22
Condition
TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
BD7602GUL
Register Map
Table 2.Register Map
Address
00h
01h
02h
03h
04h
Register
name
R/W
INIT
D7
D6
D5
D4
ICREV
LDOCNT
LDO2ADJ
GPOCNT
GPOMODE
R
R/W
R/W
R/W
R/W
09h
03h
03h
00h
00h
-
-
-
-
-
DEVICE [2:0]
-
R/W
INIT
D7
D6
D5
D4
D3
D2
R
09h
-
-
D3
D2
-
D1
D0
CHIPREV [2:0]
LDO2_EN LDO1_EN
LDO2_VOUT [2:0]
REG_GPO
GPO_EN
Reserved
GPO_SEL
Register Detail
Address
00h
Register
name
ICREV
Bit[5:3]: DEVICE [2:0]
Bit[2:0]: CHIPREV [2:0]
Address
01h
Register
name
LDOCNT
Bit[1]: LDO2_EN
Bit[0]: LDO1_EN
Address
02h
Register
name
LDO2ADJ
DEVICE [2:0]
D1
D0
CHIPREV [2:0]
DEVICE Name Notification
001: BD7602GUL (Initial Value)
CHIP Revision Notification
001: DS1 (Initial Value)
R/W
INIT
D7
D6
D5
D4
D3
D2
D1
D0
R/W
03h
-
-
-
-
-
-
LDO2_EN
LDO1_EN
D2
D1
D0
LDO2 Output ON/OFF Control
0: OFF
1: ON (Initial Value)
LDO1 Output ON/OFF Control
0: OFF
1: ON (Initial Value)
R/W
INIT
D7
D6
D5
D4
D3
R/W
03h
-
-
-
-
-
LDO2_VOUT [2:0]
Bit[2:0]: LDO2_VOUT [2:0] LDO2 Output Voltage set “
000: 2.80V
001: 2.90V
010: 2.95V
011: 3.00V (Initial Value)
100: 3.05V
101: 3.10V
110: 3.20V
111: 3.30V
Address
03h
Register
name
GPOCNT
Bit[1]: GPO_EN
Bit[0]: REG_GPO
Address
04h
R/W
INIT
D7
D6
D5
D4
D3
D2
D1
D0
R/W
00h
-
-
-
-
-
-
GPO_EN
REG_GPO
GPO Enable/Disable Control
0: Disable (Hi-Z) (Initial Value)
1: Enable (Output Type and Output Voltage follow data of address 04h)
GPO Output Control
0: Low Output (Initial Value)
1: High Output (CMOS Output), Hi-Z (NMOS Output)
Register
name
R/W
INIT
D7
D6
D5
D4
D3
D2
D1
D0
GPOMODE
R/W
00h
-
-
-
-
-
-
Reserved
GPO_SEL
Bit[1]: Reserved
Reserved Register （no any function）
In case of writing address 04h, note to set this bit to “0”.
Bit[0]: GPO_SEL
GPO Output Type
0: CMOS Output (Initial Value)
1: NMOS Output
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TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
BD7602GUL
Timing Chart
2.8V
2.7V
VBAT(External input)
VBATUVLO(Internal signal)
2.3V (Reference)
VREF
DVDD(External input)
I2C Access
W/R Disable
W/R Enable
W/R Disable
500µsec
LDO1 Output
GPO Input
W/R Disable
GPO Output
Initial: Hi-Z
W/R Operation
Write Data
W/R Disable
Initial: Hi-Z
Figure 40. Timing Chart
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TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
BD7602GUL
Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC‟s power
supply terminals.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Thermal Consideration
Should by any chance the power dissipation (Pd) rating be exceeded, the rise in temperature of the chip may result in
deterioration of its properties. The absolute maximum rating of the Pd stated in this specification is when the IC is
mounted on a 1.64mm x 1.64mm x 0.57mm glass epoxy board. In case the absolute maximum rating has been
exceeded, increase the board size and copper area to prevent exceeding the Pd rating.
5.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately
obtained. The electrical characteristics are guaranteed under the conditions of each parameter.
6.
Rush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may
flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring,
and routing of connections.
7.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
8.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC‟s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
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20/22
TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
BD7602GUL
Operational Notes – continued
10. Unused Input Terminals
Input terminals of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance
and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input terminals should be connected to
the power supply or ground line.
11. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Pin B
B
Parasitic
Elements
N
P+
N P
P+
N
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
Parasitic
Elements
GND
N Region
close-by
Figure 41.Example of monolithic IC structure
12. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
13. Save Operating Range
When using this IC, set output transistor not to exceed absolute maximum range or ASO.
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be
within the IC‟s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn off all output pins. When the Tj falls below the
TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage
15. Over Current Protection circuit
Because output has an Over Current Protection (OCP) circuit that operates in accordance with the rated output
capacity, IC is protected from breakage or possible damage when the load becomes shorted. This protection circuit is
also effective in preventing damage to the IC in case of sudden and unexpected current surges only and not for its
continuous protection.
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TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
BD7602GUL
Ordering Name
B
D
information
7
6
0
2
Name of Product
G
U
L
-
Package
GUL: VCSP50L1C
E2
Packing、forming specification
E2: reel type emboss taping
Package Dimensions
Unit: mm
< Tape and Reel Information >
Tape
Embossed carrier tape
Quantity
3000pcs
Direction of feed
E2
The direction is the pin 1 of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
1234
1234
Reel
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1234
1234
1pin
22/22
1234
1234
Direction of feed
TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
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