BD8165MUV

1/4 STRUCTURE PRODUCT NAME TYPE FEATURES Silicon Monolithic Integrated Circuit Multi-Channel Power IC ＢＤ８１６５ＭＵＶ ・Built-in 5-channel outputs for TFT-LCD Display ・Built-in VCOM AMP ●ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Supply Voltage 1 Supply Voltage 2 Supply Voltage 3 SW1 Voltage SYMBOL VCC,PVCC2,3 LDVCC1 HVCC VSW1 LIMITS 15 7 20 22 UNIT V V V V Tjmax 150 ℃ Junction Temperature Pd 4826*1 mW Power Dissipation Operating Temperature Range Topr -40～105 ℃ Storage Temperature Range Tstg -55～150 ℃ *1 Decreased in done 38.6mW/℃ for operating above Ta≧25℃, mounted on 70×70×1.6mm 4 layer Glass-epoxy PCB.(back foil 70.0mm×70.0mm) ●OPERATING CONDITIONS (Ta=-40℃～+105℃) Parameter Supply Voltage 1 Supply Voltage 2 Supply Voltage 3 SW1 Voltage Symbol VCC,PVCC2,3 LDVCC1 HVCC VSW1 MIN 4.2 6 - MAX 14 5.5 18 18 Unit V V V V Status of this document The Japanese version of this document is the formal specification. A customer may use this translation version only for a reference to help reading the formal version. If there are any differences in translation version of this document, formal version takes priority. REV. D 2/4 ●ELECTRICAL CHARACTERISTICS（Unless otherwise specified, Ta=25℃,VCC=12V,HVCC=15V） Limit Parameter Symbol Unit Condition MIN TYP MAX 【DC/DC BLOCK】 Feed Back Voltage 1 VFB1 1.230 1.250 1.270 V Feed Back Voltage 2 VFB2 1.225 1.250 1.275 V Feed Back Voltage 3 VFB3 0.882 0.900 0.918 V FB Input Bias Current IFB -1.2 0.1 1.2 uA COMP Source Current ICSO 15 40 65 uA COMP Sink Current ICSI -65 -40 -15 uA MAX Duty MDT 80 90 % 【LDO1,LDO3 BLOCK】 LDO Feed Back Voltage LDFB 1.231 1.25 1.269 V Drop Voltage 1 DPLD1 0.3 1.0 V LDFB1=1.0V, Io=500mA Drop Voltage H 0.4 0.9 V DPLDH LDFB_H=1.0V, Io=100mA 【Charge Pump BLOCK】 Feed Back Voltage CPFB 1.225 1.25 1.275 V Drop Voltage 1 DPCPP 0.14 0.35 0.78 V Io=100mA Drop Voltage 2 DPCPN 0.28 0.7 1.55 V Io=100mA 【Operational Amplifier BLOCK】 Input Offset Voltage VOFF -15 0 15 mV VCOM Output Current ICOM 60 150 mA Load Regulation ⊿Vo -15 1 15 mV Io=+1mA～-1mA Maximum Output Voltage VoH HVCC-1.0 HVCC-0.8 V Io=-1mA, IN=HVCC-0.8V Minimum Output Voltage VoL 0.1 0.16 V Io=1mA, IN=0V 【WHOLE】 Reference Voltage VREF 2.46 2.53 2.60 V Oscillation Frequency FSW 550 650 750 kHz UVLO Voltage UVLO 0.88 1.17 V Average Supply Current (VCC,PVCC2,3) ICC 5 11 mA No Switching Average Supply Current (HVCC) HICC 1.0 4 mA No Switching ○This product is not designed for protection against radioactive rays. ● PHYSICAL DIMENSION・MARKING (VQFN048V7070) BD8165 LOT NO Marking (UNIT:mm) REV. D 3/4 ●BLOCK DIAGRAM COMP1 COMP2 BOOT2 PG2 STEP DOWN 降圧 SW2 CTL2 POSITIVE 正チャージ REG LDFB1 LDCTL1 LDPG1 LDVCC1 VCP2 LDO1 GND OSC CHARGE PUMP ポンプ 負チャージ NEGATIVE C2 LDO 1 HVCC VCP1 REG CHARGE PUMP ポンプ CONVERTER コンバータ VREF PROTECT STEP UP圧 昇 CONVERTER コンバータ PGND1 PGND1 CPFB1 CPPG PG1 CTL3 SW3 BOOT3 PGATE PVCC2 PG3 PG3 VREF VREF UVLO UVLO DTC1 DTC1 STEP DOWN 降圧コンバータ CONVERTER DTC2 DTC3 CTL1 SW1 VCC SCP FB2 FB2 FB3 PVCC3 PVCC3 FB1 C1 CPFB2 LDO 3 HVCC COMP3 COMP3 LDFB_H LDD_H IN- VCOM VCOM IN+ ●PIN No. & FUNCTION TABLE PIN NO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 PIN NAME BOOT3 PG3 DTC3 COMP3 FB3 PVCC3 LDFB_H LDO_H IN+ INVCOM CPFB2 C2 VCP2 HVCC VCP1 C1 CPPG CPFB1 PGND1 PG1 SW1 PGATE DTC1 FUNCTION Boot strap Terminal 3 Power Good Output 3 DUTY Control Input 3 Error Amp Output 3 Feed Back Input 3 Power Supply Input LDO Feed Back Input H LDO Output H COM Input + COM Input COM Output Charge Pump Feed Back Input 2 Charge Pump Input2 Charge Pump LDO Output 2 Power Supply Input Charge Pump LDO Output 1 Charge Pump Output 1 CP Power Good Output Charge Pump Feed Back Input 1 Ground Power Good Output 1 Power Switch Output 1 Pch Gate Drive Output DUTY Control Input 1 PIN NO. 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 PIN NAME COMP1 FB1 CTL1 SCP VCC UVLO VREF FB2 COMP2 DTC2 PVCC2 BOOT2 PG2 SW2 CTL2 REG LDFB1 LDCTL1 LDPG1 LDO1 LDVCC1 GND CTL3 SW3 FUNCTION Error Amp Output 1 Feed Back Input 1 Control Input 1 Short Protection Current Output Power Supply Input UVLO Input Reference Voltage Output Feed Back Input 2 Error Amp Output 2 DUTY Control Input 2 Power Supply Input Boot strap Terminal 2 Power Good Output 2 Power Switch Output 2 Control Input 2 Boot strap Regulator Output LDO Feed Back Input 1 LDO1 Control Input LDO1 Power Good Output LDO Output 1 Power Supply Input Ground Control Input 3 Power Switch Output 3 REV. D 4/4 Operation Notes 1. Absolute maximum range This product are produced with strict quality control, but might be destroyed in using beyond absolute maximum ratings. Open IC destroyed a failure mode cannot be defined (like Short mode, or Open mode). Therefore physical security countermeasure, like fuse, is to be given when a specified mode to be beyond absolute maximum ratings is considered. 2. Ground potential GND terminal should be a lowest voltage potential every state. Please make sure all pins which is over ground even if include transient feature. 3. Setting of heat Use a setting of heat that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.. 4 . Short Circuit between Terminal and Soldering Don’t short-circuit between Output pin and the power supply pin, Output pin and GND pin, or the power supply pin and GND pin.When soldering the IC on circuit board, please be unusually cautious about the orientation and the position of the IC. When the orientation is mistaken the IC may be destroyed. 5 . Electromagnetic Field Mal-function may happen when the device is used in the strong electromagnetic field. 6. Ground wiring patterns When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the application's reference point so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring patterns of any external components. 7. This IC is a monolithic IC which has P+ isolation in the P substrate and between the various pins. A P-N junction is formed from this P layer and the N layer of each pin. For example, when a resistor and a transistor is connected to a pin. Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical damage. Accordingly, you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin. resister （PinＡ） （PinＢ） Ｃ Ｅ （PinＢ） ～ ～ Ｂ Ｃ ～ ～ ＧＮＤ Ｂ Ｅ ＧＮＤ parasitic diode or transistor SIMPLIFIED STRUCTURE OF BI-POLAR IC Ｎ Ｐ＋ Ｐ＋ Ｐ＋ Ｎ Ｎ parasitic diode Ｎ Ｐsubstrate Ｎ （PinＡ） Ｐ Ｐ＋ near-by other element Parasitic diode ＧＮＤ parasitic diode or transistor ＧＮＤ 8. Over current protection circuit The over-current protection circuits are built in at output, according to their respective current outputs and prevent the IC from being damaged when the load is short-circuited or over-current. But, these protection circuits are effective for preventing destruction by unexpected accident. When it’s in continuous protection circuit moving period don’t use please. And for ability, because this chip has minus characteristic, be careful for heat plan. 9. Built-in thermal circuit A temperature control circuit is built in the IC to prevent the damage due to overheat. Therefore, all the outputs are turned off when the thermal circuit works and are turned on when the temperature goes down to the specified level. 10.Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Ground the IC during assembly steps as an antistatic measure, and use similar caution when transporting or storing the IC. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. 11.Discontiguous mode The DC/DC converters of this IC are designed for being used in contiguous current mode, normally. The special consideration on adjusting the inductance or the resistive output load to avoid the discontiguous current mode should be properly done. REV. D ～ ～ Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. 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