0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BD8184MUV

BD8184MUV

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    BD8184MUV - Power Supply ICs for TFT-LCD Panels Multi-channel System Power Supply IC for Small to Mi...

  • 数据手册
  • 价格&库存
BD8184MUV 数据手册
Power Supply ICs for TFT-LCD Panels Multi-channel System Power Supply IC for Small to Middle PANEL BD8184MUV No.11035EAT18 Description The BD8184MUV is a system power supply for the TFT-LCD panels used for liquid crystal Monitors and Note Display. Incorporates high-power FET with low on resistance for large currents that employ high-power packages, thus driving large current loads while suppressing the generation of heat. A charge pump controller is incorporated as well, thus greatly reducing the number of application components. Also Gate Shading Function is included. Features 1) Boost DC/DC converter; 18 V / 2.5 A switch current. (Target specification is ±1% accurate.) 2) Switching frequency: 1.2 MHz 3) Operational Amplifier (short current 200mA) 4) Incorporates Positive / Negative Charge-pump Controllers. 5) Gate Shading Function 6) VQFN024V4040 Package (4.0 mm x 4.0 mm) 7) Protection circuits: Under Voltage Lockout Protection Circuit Thermal Shutdown Circuit (Latch Mode) Over Current Protection Circuit (AVDD) Timer Latch Mode Short Circuit Protection (AVDD SRC VGL) Over / Under Voltage Protection Circuit for Boost DC/DC Output No SCP time included (160ms from UVLO-off) Applications Power supply for the TFT-LCD panels used for LCD Monitors and Note Display www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/17 2011.11 - Rev.A BD8184MUV ●Absolute Maximum Ratings (TA = 25℃) Parameter Supply Voltage 1 Supply Voltage 2 Supply Voltage 3 Switching Voltage Input Voltage 1 Input Voltage 2 Output Voltage 1 Output Voltage 2 Output Voltage 3_1 Output Voltage 3_2 Junction Temperature Power Dissipation Operating Temperature Range Storage Temperature Range Symbol VIN AVDD SRC SW, DRP, DRN RSTIN, DLY, CTL, FB, FBP, FBN INN, INP RST, COMP, VREF VCOM GSOUT SRC - GSOUT Tjmax Pd Topr Tstg LIMIT +7 +20 +36 +20 VIN+0.3 +20 +7 +20 +36 +40 150 3560 *1 Technical Note Unit V V V V V V V V V V ℃ mW ℃ ℃ -40~85 -55~150 *1 Derating in done 28.5mW/℃ for operating above Ta≧25℃(On 4-layer 74.2mm×74.2mm×1.6mm board) ●Operating Range (Ta=-40℃~85℃) Parameter Supply Voltage 1 Supply Voltage 2 Supply Voltage 3 Symbol VIN AVDD SRC MIN 2.0 6 12 MAX 5.5 18 34 Unit V V V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/17 2011.11 - Rev.A BD8184MUV ●Electrical characteristics (unless otherwise specified VIN = 3.3V, AVDD = 10V and TA=25℃) Limits Parameter Symbol Unit Min Typ Max GENERAL Circuit Current Under Voltage Lockout Threshold Internal Reference Output Voltage Thermal Shutdown (rising) Duration to Trigger Fault Condition BOOST CONVERTER (AVDD) FB Regulation Voltage FB Fault Trip Level FB Input Bias Current SW Leakage Current Maximum switching Duty Cycle SW ON-Resistance SW Current Limit Over Voltage Protection Under Voltage Protection BOOST Soft Start Time Oscillator frequency RESET RST Output Low Voltage RSTIN Threshold Voltage RSTIN Input Current RST Blanking Time Operational Amp rifer Input Range Offset Voltage Input Current Output Swing Voltage (VINP= 5.0V) Short Circuit Current Slew Rate VRANGE VOS IINP VOH VOL ISHT_VCOM SR 0 4.94 2 0 5.03 4.97 200 40 AVDD 15 5.06 V mV µA V V mA V/us VRST VTH_L IRSTIN TNO_SCP 1.18 146 0.05 1.25 0 163 0.2 1.32 180 V V µA ms VFB VTL_FB IFB ISW_L MDUTY RSW ISWLIM VOVP VUVP TSS_FB FSW 1.238 0.95 85 2.5 1.3 1.0 1.250 1.0 0.1 0 90 200 20 1.6 13.6 1.2 1.262 1.05 1 10 95 1.9 1.4 V V µA µA % mΩ A V V ms MHz IVIN VUVLO VREF TSD TSCP 1.75 1.238 1.2 1.85 1.250 160 55 3 1.95 1.262 mA V V ℃ ms Technical Note Condition No Switching VIN rising No laod Junction Temp FB , FBP or FBN below threshold Voltage follower VFB falling VFB= 1.5V VSW=20V VFB= 1.0V ISW= 200mA AVDD rising AVDD falling IRST =1.2mA RSTIN falling VRSTIN=0 to VIN-0.3 No SCP Zone VINP= 5.0V VINP= 5.0V ICOM = +50mA ICOM = -50mA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/17 2011.11 - Rev.A BD8184MUV Technical Note ●Electrical characteristics (unless otherwise specified VIN = 3.3V, AVDD = 10V and TA=25℃) (Continued) Limits Parameter Symbol Unit Condition Min Typ Max Negative Charge pump driver (VGL) FBN Regulation Voltage FBN Fault Trip Level FBN Input Bias Current Oscillator frequency DRN Leakage Current Positive Charge pump driver (SRC) FBP Regulation Voltage FBP Fault Trip Level FBP Input Bias Current Oscillator frequency DRP Leakage Current Soft-Start Time Gate Shading Function (GSOUT) DLY Source Current DLY Threshold Voltage CTL Input Voltage High CTL Input Voltage Low CTL Input Bias Current Propagation delay time (Rising) Propagation delay time (Falling) SRC -GSOUT ON Resistance GSOUT-RE ON Resistance GSOUT-GND ON Resistance IDLY VTL_DLY VIN_H VIN_L ICTL TGS_R TGS_F RGS_H RGS_M RGS_L 4 1.22 2.0 5 1.25 0 100 100 15 30 2.5 6 1.28 0.5 µA V V V µA ns ns Ω Ω kΩ VRSTIN=0 to VIN-0.3 VSRC= 25V VSRC= 25V VDLY = 1.5V VDLY = 1.5V VDLY = 1.0V VDLY falling VFBP VTL_FBP IFBP FCPP IDRP_L TSSP 1.23 0.95 500 1.25 1.0 0.1 600 0 3.4 1.27 1.05 1 700 10 V V µA kHz µA ms VFBP= 1.5V VFBP falling VFBP= 1.5V VFBN VTL_FBN IFBN FCPN IDRN_L 235 400 500 250 450 0.1 600 0 265 500 1 700 10 mV mV µA kHz µA VFBN=1.0V VFBN rising VFBN= 0.1V ○This product is not designed for protection against radio active rays. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/17 2011.11 - Rev.A BD8184MUV ●Electrical characteristic curves (Reference data) (Unless otherwise specified VIN = 3.3V, AVDD = 10V and TA=25℃) 2.0 50 45 1.6 1.40 Technical Note 25℃ 85℃ 40 35 IVIN [mA] 30 25 20 15 85℃ 25℃ -40℃ Fsw [MHz] 1.30 IVIN [mA] 1.2 1.20 0.8 -40℃ 1.10 0.4 10 5 1.00 -40 0 1 2 3 4 5 0.0 0 1 2 3 4 5 0 VIN [V] VIN [V] -15 10 35 60 85 Ta [℃] Fig.1 Curcuit Current (No switching) 1.40 1.30 1.29 1.30 Fsw [MHz] 1.28 1.27 VREF [V] 1.26 1.20 Fig.2 Curcuit Current (Switching) Fig.3 Dependent on Temparactue Freqency 1.30 85℃ 25℃ 1.25 VREF [V] 1.25 1.24 1.23 1.22 25℃ -40℃ 1.20 1.10 -40℃ 1.00 2 2.5 3 3.5 4 4.5 5 5.5 VIN [V] 1.21 1.20 2 2.5 3 3.5 4 4.5 5 5.5 85℃ 1.15 0 5 10 15 20 25 30 VIN [V] IVREF[mA] Fig.4 Dependent on Input Voltage Freqency Fig.5 VREF Line Regulation Fig.6 VREF Load Regulation 100 80 60 40 20 0 0 1 2 VCOMP [V] 3 ICOMP [uA] -40℃ 85℃ 25℃ Duty [%] 10 6 2 -2 -6 -10 0 1 2 VCOMP [V] 3 ICOMP [uA] 10 6 2 -2 -6 -10 0 1 2 VCOMP [V] 3 Fig.7 COMP V.S.CDUTY Fig.8 COMP Sink Current Fig.9 COMP Source Current 100 Efficiency [%] IAVDD IAVDD 90 80 AVDD AVDD 70 VIN=3.3V AVDD=9.8V Fsw=1.177MHz VGH,VGL→NoLoad 60 0 100 200 300 400 500 IAVDD [mA] Fig.10 Load Transient Response Falling Fig.11 Load Transient Response Rising Fig.12 Boost Converter Efficiency www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/17 2011.11 - Rev.A BD8184MUV ●Electrical characteristic curves (Reference data) – Continued (Unless otherwise specified VIN = 3.3V, AVDD = 10V and TA=25℃) 10 Technical Note VINP VINP DLY Time [s] 1 0.1 0.01 INN=VCOM INN=VCOM 0.001 0.001 0.01 0.1 1 10 C_DLY [uF] Fig.13 VCOM Slew Rate (Rising) Fig.14 VCOM Slew Rate (falling) Fig.15 C_DLY vs. delay time CTL CTL SRC AVDD VIN VGL GSOUT(RE pull down to AVDD) GSOUT(RE pull down to GND) Fig. 16 Gate Sharding Wave form1 Fig.17 Gate Sharding Wave form2 Fig.18 Power On Sequence1 (Main Output) SRC VIN DLY CTL AVDD VIN GSOUT GSOUT RST SRC AVDD VIN GSOUT RST Fig.19 Power On Sequence2 (CTL=signal, RE pull down to AVDD) Fig.20 Power Off Sequence1 (R_RST_U=10k,R_RST_D=10k) Fig.21 Power Off Sequence2 (R_RST_U=10k,R_RST_D=OPEN) SRC AVDD VIN VGL Fig.22 Power On Sequence3 (Main Output) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/17 2011.11 - Rev.A BD8184MUV ●Block Diagram 13 Technical Note ●Pin Configuration GSOUT VIN DLY 12 (1.25V) 24 23 22 21 20 17 Error Amplifier FB 1.25V Comparator 20 Digital Control Block PGND 18 INP 1 18 19 SW 2 3 SW RE VREF Reference Voltage 0.25V Fall Fall/Thermal Control PGND SRC 16 COMP PGND PGND Oscillator Sequence Control Current Sense and Limit AVDD 19 INN 2 17 FB 5 VCOM 3 16 0.25V FBN 11 Negative Charge Pump 1.25V AVDD AGND1 DRN 7 BD8184MUV 4 COMP 15 AGND1 AVDD AGND1 RSTIN AVDD DRP 6 5 14 FBP 10 Positive Charge pump AVDD AGND2 DRP 2 1 6 13 INN INP DLY CTL VCOM AGND1 3 VIN 10 24 8 RST FBP 21 RE GSOUT SRC RST 1.25V 23 22 9 Fig.24 Pin Configuration 15 RSTIN 160ms 14 AGND2 Fig.23 Block Diagram ●Package Dimension VQFN024V4040 4.0±0.1 4.0±0.1 Marking D8184 LOT 1.0MAX 1PIN MARK S +0.03 0.02 -0.02 (0.22) 0.08 S C0.2 1 24 2.4±0.1 6 0.4±0.1 19 18 13 12 0.75 0.5 +0.05 0.25 -0.04 2.4±0.1 7 (Unit : mm) Fig.25 Package Dimension (UNIT : mm) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/17 2011.11 - Rev.A VREF DRN FBN CTL High Voltage Switch Control 12 11 4 7 8 9 BD8184MUV ●Pin Assignments Technical Note PINNO. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 Pin name INP INN VCOM AGND1 AVDD DRP DRN CTL RST FBP FBN VREF VIN AGND2 RSTIN COMP FB PGND1 PGND2 SW RE GSOUT SRC DLY Function COM Amplifier input + COM Amplifier input COM Amplifier output Ground Supply voltage input for com, charge pump Drive pin of the positive charge pump Drive pin of the negative charge pump High voltage switch control pin Open drain reset output Positive charge pump feed back Negative charge pump feed back Internal Reference voltage output Supply voltage input for PWM Ground Reset comparator input BOOST amplifier output BOOST amplifier input BOOST FET ground BOOST FET ground BOOST FET Drain Gate High voltage Fall set pin Gate High voltage output set pin Gate High voltage input set pin GSOUT Delay Adjust pin www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/17 2011.11 - Rev.A BD8184MUV ●Main Block Function ・Boost Converter A controller circuit for DC/DC boosting. The switching duty is controlled so that the feedback voltage FB is set to 1.25 V (typ.). A soft start operates at the time of starting. ・Positive Charge Pump A controller circuit for the positive-side charge pump. The switching amplitude is controlled so that the feedback voltage FBP will be set to 1.25 V (typ.). ・Negative Charge Pump A controller circuit for the negative-side charge pump. The switching amplitude is controlled so that the feedback voltage FBN will be set to 0.25 V (Typ.). Technical Note ・Gate Shading Controller A controller circuit for P-MOS FET Switch The GSOUT switching synchronize with CTL input. When VIN drops below UVLO threshold or RST=Low(=RSTIN
BD8184MUV 价格&库存

很抱歉,暂时无法提供与“BD8184MUV”相匹配的价格&库存,您可以联系我们找货

免费人工找货