0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BD81870EFV-ME2

BD81870EFV-ME2

  • 厂商:

    ROHM(罗姆)

  • 封装:

    HTSSOPB20_6.5X4.4_EP

  • 描述:

    BD81870EFV-ME2

  • 数据手册
  • 价格&库存
BD81870EFV-ME2 数据手册
Datasheet Single-chip Type with Built-in FET Switching Regulator Series Step-up / Inverted 2ch Switching Regulator BD81870EFV-M General Description Special Characteristics  Reference Accuracy:  Switching Frequency: BD81870EFV is current mode step-up and inverted 2 channel switching regulator with built in FET. ±3%(Ta=-40 to 105°C) ±14.3%(Ta=-40 to 105°C) Key Specification Features      Input voltage range: 2.5V to 5.5V  Step-up Output voltage range: VDD x 1.24 to 18.0V  Inverted Output voltage range: VDD - 13.0V to -1.0V  Switching Frequency: 2.1MHz(Typ.)  Nch FET ON resistance: 300mΩ(Typ.)  Pch FET ON resistance: 300mΩ(Typ.)  Operating Temperature range: -40°C to +105°C Qualified(Note 1) AEC-Q100 Wide input voltage range 2.5V to 5.5V High Frequency 2.1MHz Built-in 300mΩ/22V Nch FET and 300mΩ/15.5V Pch FET.  Built-in 150mΩ high-side switch for boost channel with soft-start function  Independent ON/OFF signal, Built-in discharge switch  Circuits protection:OCP, SCP, OVP, UVLO, TSD (Note 1:Grade2) Package Applications W (Typ.) x D (Typ.) x H (Max.) 6.5mm x 6.4mm x 1.00mm HTSSOP-B20  Car navigation panel, Car instrument panel HTSSOP-B20 Typical Application Circuit (TOP VIEW) VDD VOUT1 VDDP LX1 VDDP DIS1 VDDP NON1 VREF HS2L VOUT2 LX2 GNDP BD81870 (HTSSOP-B20) N.C. HSWON VOUT2 SEQON DIS2 STB1 GNDA STB2 INV2 VDDA VDD Figure 1. Application Circuit 〇Product structure : Silicon monolithic integrated circuit .www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 〇This product has no designed protection against radioactive rays 1/32 TSZ02201-0313AAF00650-1-2 25.May.2018 Rev.002 BD81870EFV-M Contents General Description ........................................................................................................................................................................ 1 Features.......................................................................................................................................................................................... 1 Applications .................................................................................................................................................................................... 1 Typical Application Circuit ............................................................................................................................................................... 1 Special Characteristics ................................................................................................................................................................... 1 Key Specification ............................................................................................................................................................................ 1 Package .......................................................................................................................................................................................... 1 Pin Configuration ............................................................................................................................................................................ 3 Pin Description................................................................................................................................................................................ 3 Block Diagram ................................................................................................................................................................................ 4 Description of each Block ............................................................................................................................................................... 5 Absolute Maximum Ratings ............................................................................................................................................................ 7 Thermal Resistance ........................................................................................................................................................................ 8 Recommended Operating Ranges ................................................................................................................................................. 8 Electrical Characteristics................................................................................................................................................................. 9 Typical Performance Curves ......................................................................................................................................................... 11 Timing Chart 1 .............................................................................................................................................................................. 17 Timing Chart 2 .............................................................................................................................................................................. 18 Application Circuite components list ............................................................................................................................................. 19 Usable Component Range............................................................................................................................................................ 20 Selecting Application Components ............................................................................................................................................... 21 Notice for application .................................................................................................................................................................... 23 Layout Guideline ........................................................................................................................................................................... 25 Operational Notes ......................................................................................................................................................................... 27 Ordering Information ..................................................................................................................................................................... 30 Marking Diagram .......................................................................................................................................................................... 30 Physical Dimension, Tape and Reel Information ........................................................................................................................... 31 Revision History ............................................................................................................................................................................ 32 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2/32 TSZ02201-0313AAF00650-1-2 25.May.2018 Rev.002 BD81870EFV-M Pin Configuration (TOP View) VDDP LX1 VDDP DIS1 VDDP NON1 VREF HS2L BD81870 LX2 GNDP N.C. (HTSSOP-B20) HSWON VOUT2 SEQON DIS2 STB1 STB2 GNDA INV2 EXP-PAD VDDA Figure 2. Pin Configuration Pin Description PIN No. SYMBOL FUNCTION PIN No. SYMBOL FUNCTION 1 VDDA Analog Power supply pin 11 VDDP Power supply pin 2 STB2 Step-up DC/DC ON/OFF pin 12 VDDP Power supply pin 3 STB1 Inverted DC/DC ON/OFF pin 13 VDDP Power supply pin 4 SEQON Sequence ON/OFF pin 14 HS2L High-side switch output pin 5 HSWON High-side switch ON/OFF pin 15 LX2 Step-up DC/DC switching pin 6 N.C. ― 16 GNDP Step-up DC/DC GND pin 7 VREF Inverted DC/DC reference output pin 17 VOUT2 Step-up DC/DC output sense pin 8 NON1 Inverted DC/DC feedback pin 18 DIS2 Step-up DC/DC discharge pin 9 DIS1 Inverted DC/DC discharge pin 19 GNDA Analog GND pin 10 LX1 Inverted DC/DC switching pin 20 INV2 Step-up DC/DC feedback pin - EXP-PAD www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 The EXP-PAD of the center of product connect to GND. 3/32 TSZ02201-0313AAF00650-1-2 25.May.2018 Rev.002 BD81870EFV-M Block Diagram For Analog block VDDA VDD HSWON VDDP SEQON UVLO PROTECT to Control Control Block STB1 TSD STB2 OCP VOUT1 ERROR AMP NON1 LX1 Phase Compensation _______ STB1 SS1 SS VREF SS1 Voltage Reference _______ STB1 SS0 SS1 SS2 CH1 Inverting Timing Control (Current Mode) OSC 2.1 MHz VOUT1 DIS1 OVP OCP SCP Timer VOUT2 SS0 High side switch HS2L OCP LX2 VOUT2 ERROR AMP INV2 GNDP SS2 0.8V Phase Compensation SS2 CH2 Step up Timing Control (Current Mode) OVP VOUT2 DIS2 GNDA Figure 3. Block Diagram www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 4/32 TSZ02201-0313AAF00650-1-2 25.May.2018 Rev.002 BD81870EFV-M Description of each Block 1. Control Block This block controls ON/OFF of each channels: Inverted DC/DC, step-up DC/DC and High-side switch channel. SEQON pin and HSWON pin set ON/OFF sequence. SEQON pin and HSWON pin must be short to VDD or GND. These pins are not fixed with internal pull-up or pull-down resistance. Control Input UVLO/TSD internal signal H L L L L Output Channels SEQON HSWON STB1 STB2 L L H H L H L H L/H L/H L/H L/H L/H L/H (Note 1) (Note 1) Inverted DC/DC Step-up DC/DC High-side switch OFF OFF OFF STB1 STB2 STB1 STB2 ON Internal ON/OFF sequence Internal ON/OFF sequence ON (Note 1) refer to the item of 12. Output discharge 2. Voltage Reference This block generates reference voltage for inverted and step-up channels. 3. UVLO This block is for under voltage lockout protection. 4. TSD This block is for protection for abnormal temperature. When the junction temperature exceeds 175°C (typ.), all output channels go shutdown. When the junction temperature falls below 150°C (typ.), the IC restarts. 5. OSC This block is the oscillator for internal clock. 6. Soft Start(SS) This block is the circuit for preventing in-rush current by increasing DC/DC converter output gradually. It generates internal soft-start reference for inverted DC/DC, step-up DC/DC and high-side switch. 7. SCP Timer This block is a timer-latch type short circuit protection. When inverted or step-up DC/DC is in operation, after 31msec (typ.) with SCP detected, all output channels go off-latch. When UVLO or TSD is detected, off-latch is released. In SEQON=L mode, when STB1 and STB2 are low, off-latch is released. In SEQON=H mode, when STB1 is low, off-latch is released. In inverted DC/DC, when NON1 pin is above error amp reference 0.0V, error amp output goes high and SCP is detected. In step-up DC/DC, when INV2 pin is below error amp reference 0.8V, error amp output goes high and SCP is detected. 8. High Side Switch This block prevents step-up channel output to become as high as VDD level by switching off the power supply of the step-up channel. At the start-up timing of step-up channel, soft-start function of high-side switch prevents in-rush current. When high-side OCP is detected, high-side switch is off-latch. When high-side switch channel in OFF conditions, off-latch is released. 9. ERROR AMP This block monitors feedback voltage. It provides voltage to control PWM. 10. Timing Control This block controls DUTY by monitoring ERROR AMP output voltage. 11. OCP This block prevent malfunction at over current by limiting internal FET current. When OCP is detected and duty is limited, Inverted DC/DC output increase or step-up DC/DC output decrease. So, SCP is detected and all output channels are OFF by off-latch function above. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 5/32 TSZ02201-0313AAF00650-1-2 25.May.2018 Rev.002 BD81870EFV-M 12. Output discharge Inverted DC/DC output capacitor is discharged through DIS1 pin when STB1 is low. The discharge function can be disabled when STB2=H in SEQON=H mode. The discharge function can NOT be disabled in SEQON=L mode because STB2 controls ON/OFF of Step-up DC/DC. Step-up DC/DC output capacitor is discharged through DIS2 pin when high-side switch is OFF. In conditions where HSWON=H, when UVLO of VDD is released, high-side switch is ON. So, discharge function of step-up DC/DC output capacitor is disabled, even if step-up DC/DC is OFF. By cutting the route from DIS2 pin to the capacitor, discharge function can be disabled. OVP function is not disabled because DIS2 pin is used to monitor the output voltage. In this case, DIS2 pin should be shorted to GND. 13. OVP By detecting high level of output voltage, this block stops switching and prevent malfunction by over voltage stress. In inverted DC/DC, when DIS1 pin is -14.5V (typ.) from VDDA level, switching stops. When DIS1 pin voltage rises, switching starts again. OVP of inverted DC/DC has hysteresis of 1.0V (typ.). In step-up DC/DC, when VOUT2 in is 20.5V (typ.) from GND level, switching stops. When VOUT2 pin voltage falls, switching starts again. OVP of step-up DC/DC has hysteresis of 1.5V (typ.). www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 6/32 TSZ02201-0313AAF00650-1-2 25.May.2018 Rev.002 BD81870EFV-M Absolute Maximum Ratings Limits Parameter Supply Voltage Symbol Unit MIN TYP MAX VDDA, VDDP -0.3 - 7 V STB1, STB2, SEQON, HSWON -0.3 - 7 V NON1, INV2 -0.3 - 7 V VREF -0.3 - 7 V Input Voltage VDDP -15.5 VDDP -15.5 LX1 DIS1 Output Voltage Operating Ambient Temperature Range Storage Temperature Range Maximum Continuous Junction Temperature - VDDP +0.3 VDDP +0.3 V V HS2L -0.3 - 7 V LX2 -0.3 - 22 V VOUT2 -0.3 - 22 V DIS2 -0.3 - 22 V Ta -40 - 105 °C Tstg -55 - 150 °C Tjmax - - 150 °C Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 7/32 TSZ02201-0313AAF00650-1-2 25.May.2018 Rev.002 BD81870EFV-M Thermal Resistance (Note 1) Parameter Thermal Resistance (Typ) Symbol Unit 1s(Note 3) 2s2p(Note 4) θJA 143.0 26.8 °C/W ΨJT 8 4 °C/W HTSSOP-B20 Junction to Ambient Junction to Top Characterization Parameter(Note 2) (Note 1)Based on JESD51-2A(Still-Air) (Note 2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 3)Using a PCB board based on JESD51-3. Layer Number of Measurement Board Single Material Board Size FR-4 114.3mm x 76.2mm x 1.57mmt Top Copper Pattern Thickness Footprints and Traces 70μm (Note 4)Using a PCB board based on JESD51-5,7. Layer Number of Measurement Board 4 Layers Material Board Size FR-4 114.3 mm x 76.2 mm x 1.6 mmt Top Thermal Via(Note 5) Pitch Diameter 1.20 mm Φ0.30 mm 2 Internal Layers Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70μm 74.2mm x 74.2mm 35μm 74.2mm x 74.2mm 70μm (Note 5) This thermal via connects with the copper pattern of all layers. Recommended Operating Ranges (Ta=-40°C to 105°C) Limits Parameter Symbol Unit MIN TYP MAX VDD 2.5 - 5.5 V Inverted output voltage VOUT1 VDD - 13 - -1.0 V Step up output voltage VOUT2 VDD x 1.24 - 18 V Power supply voltage www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 8/32 TSZ02201-0313AAF00650-1-2 25.May.2018 Rev.002 BD81870EFV-M Electrical Characteristics (Unless otherwise noted, Ta=25°C, VDD=3.6V) Limits Parameter Symbol Unit MIN TYP MAX Condition Under Voltage Lockout Threshold UVLO release voltage UVL_REL 2.1 2.3 2.5 V VDD sweep up UVLO detect voltage UVL_DET 1.7 1.8 1.9 V VDD sweep down FOSC 1.8 2.1 2.4 MHz LX1 Max Duty DMAX1 80 86 - % LX2 Max Duty DMAX2 80 86 - % VREF 0.985 1.000 1.015 V VREF_R 0.970 1.000 1.030 V VINV 0.788 0.800 0.812 V INV2 voltage range VINV_R 0.776 0.800 0.824 V CH1 Soft start time TSS1 2.5 3.2 3.9 ms CH2 Soft start time TSS2 2.5 3.2 3.9 ms LX1 PMOS ON resistance RLX1 - 300 480 mΩ DIS1 discharge resistance RDIS1 - 100 160 Ω VSTB1=0V, IDIS1=-1mA NON1 discharge resistance RNON1 - 150 240 Ω VSTB1=0V, INON1=1mA VREF discharge resistance RVREF - 150 240 Ω VSTB1=0V, IVREF=1mA High-side SW ON resistance RHSW - 150 240 mΩ LX2 NMOS ON resistance RLX2 - 300 480 mΩ DIS2 discharge resistance RDIS2 - 100 160 Ω LX1 OCP threshold (Note 1) IOCP1 1.2 2.4 3.6 A (Note 1) IOCP2 1.2 2.4 3.6 A HS2L leak current ILX_HSW -1 0 1 µA LX1 leak current ILK_LX1 -1 0 1 µA LX2 leak current ILK_LX2 -1 0 1 µA CH1 Over voltage protection OVP1 VDD -15.5 VDD -14.5 VDD -13.5 V Monitoring DIS1 CH2 Over voltage protection OVP2 19 20.5 22 V Monitoring VOUT2 TSD Detect Temperature (Note 1) TSD_DET 150 175 200 °C TSD Hysteresis (Note 1) TSD_HYS - 25 - °C Oscillator Oscillating frequency -40
BD81870EFV-ME2 价格&库存

很抱歉,暂时无法提供与“BD81870EFV-ME2”相匹配的价格&库存,您可以联系我们找货

免费人工找货
BD81870EFV-ME2
    •  国内价格 香港价格
    • 1+18.691081+2.27164
    • 10+15.3286210+1.86298
    • 50+12.1435650+1.47588
    • 100+11.53074100+1.40140
    • 500+10.74052500+1.30536
    • 1000+10.361541000+1.25930

    库存:0