Datasheet
1.8V to 5.5V, Integrated 2.0A MOSFET 1ch
Buck-Boost Converter
BD8306MUV
General Description
Key Specifications
ROHM’s
highly-efficient
buck-boost
converter
BD8306MUV produces buck-boost output voltage
including 3.3 V from two-cell or three-cell alkaline
battery, or one-cell lithium-ion battery with just one
inductor. This IC adopts the original buck-boost drive
system and creates a more efficient power supply than
the conventional SEPIC-system or H-bridge system
switching regulators.
Input Voltage Range:
+1.8V to +5.5V
Output Voltage Range:
+1.8V to +5.2V
Output Current:
(at 3.3V Output, +2.8V to +5.5V Input)
1.0A
(at 5.0V Output, +2.8V to +5.5V Input)
0.7A
Pch FET ON-Resistance:
120mΩ(Typ)
Nch FET ON-Resistance:
100mΩ(Typ)
Standby Current:
0μA (Typ)
Operating Temperature Range:
-40°C to +85°C
Features
Package
Highly-Efficient Buck-Boost DC/DC Converter
Constructed with just one Inductor.
Maximum output current changes depending on the
input and output voltages. Input current for PVCC
terminal should be less than 2.0A including the DC
current and ripple current of the inductor. Please
refer to Figure 25 and Figure 34 for details about
the maximum output current at 3.3V and 5.0V
output.
Incorporates a Soft-Start Function.
Incorporates a Timer Latch System with Short
Protection Function.
W (Typ) x D (Typ) x H (Max)
VQFN016V3030
3.00mm x 3.00mm x 1.00mm
Application
General Portable Equipment
DSC
DVC
Cellular Phone
PDA
LED
Typical Application Circuit
2.8V to 5.5V, Output: 3.3V / 1.0 A, Frequency 1MHz
10µF
(ceramic)
10uF(ceramic)
murata
murata
GRM31CB11A106KA01
CVCC
C
VCC
1uF
1µF
14
VCC
Lx2
LX2
7
15
STB
LX2
Lx2
6
16
RT
4.7µH
4.7uH
TOKO DE3518C
10µF
(ceramic)
10uF(ceramic)
murata
murata
GRM31CB11A106KA01
1
2
3
CCFB
FB
2200pF
2200pF
5
3.3V/1.0A
4
R
INV1
RINV1
56kΩ
56kΩ
CCC
C
120pF
120pF
RRC
C
4.7kΩ
4.7kΩ
RRINV2
INV2
10kΩ
10kΩ
RRFB
4.7kΩ
FB 4.7kΩ
○Product structure：Silicon monolithic integrated circuit
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© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
VOUT
GND
VOUT
INV
RRRT
RT
39kΩ
39kΩ
8
PGND
FB
ON/OFF
9
PGND
PVCC
10
Lx1
LX1
13
RRVCC
VCC
0Ω0Ω
11
PVCC
12
Lx1
LX1
2.8V2.8～5.5V
to 5.5V
○This product has no designed protection against radioactive rays
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BD8306MUV
Pin Configuration
(TOP VIEW)
PVCC
LX1
LX1
PGND
12
11
10
9
PVCC 13
8
PGND
VCC
14
7 LX2
STB
15
6 LX2
RT
16
5 VOUT
1
2
3
4
FB
INV
GND
VOUT
Pin Descriptions
Pin No.
Pin Name
1
FB
Output pin of error amp
Function
2
INV
Input pin of error amp
3
GND
Ground pin
4 to 5
VOUT
Output voltage pin
6 to 7
LX2
Output side pin for inductor
8 to 9
PGND
Ground pin for POW-MOS
10 to 11
LX1
Input side pin for inductor
12 to 13
PVCC
14
VCC
Voltage supply pin for control block
15
STB
ON/OFF pin
16
RT
Voltage supply pin for DC/DC converter
Pin for configuration of frequency
Block Diagram
STB
RT
VCC
PVCC
GND
TIMING
CONTOL
LX1
FB
TIMING
CONTOL
PGND
INV
VOUT
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Description of Blocks
1. VREF
This block generates ERROR AMP reference voltage. The reference voltage is 0.5V.
2. UVLO
Circuit for preventing malfunction at low voltage input. This circuit prevents malfunction of the internal circuit while start
up of the power supply voltage or while low power supply voltage input. The circuit monitors VCC pin voltage then turns
OFF all output FETs and DC/DC converter output when VCC voltage is lower than 1.6V, and reset the timer latch of the
internal SCP circuit and soft-start circuit.
3. SCP
Short-circuit protection circuit based on timer latch system.
When the INV pin voltage is lower than 0.5V, the internal SCP circuit starts counting. SCP circuit detects high voltage
output of Error AMP. Since internal Error AMP has highly gain as high as 80dB or more, the output voltage of Error AMP
goes high and detects SCP even 1mV drop than set voltage (0.5V typ) occurs on INV pin voltage. The internal counter is
in synch with OSC, the latch circuit activates after the counter counts about 16400 oscillations to turn OFF DC/DC
converter output (about 16.4 msec when RRT =39KΩ). To reset the latch circuit, turn OFF the STB pin once. Then, turn it
ON again or turn on the power supply voltage again.
4. OSC
Oscillation circuit to change frequency by external resistance of the RT pin (Pin 16).
When RRT = 39 kΩ, operation frequency of DC/DC converter is set at 1 MHz.
5. ERROR AMP
Error amplifier for monitoring output voltage and output PWM control signals.
The internal reference voltage for Error AMP is set at 0.5 V.
6. PWM COMP
Voltage-pulse width converter for controlling output voltage corresponding to input voltage. Comparing the internal
SLOPE waveform with the ERROR AMP output voltage, PWM COMP controls the pulse width and outputs to the driver.
Max Duty and Min Duty are set at the primary side (LX1) and the secondary side (LX2) of the inductor respectively,
which are as follows:
Primary side (LX1)
Max Duty : 100 %(LX1 High side PMOS ON Duty)
Min Duty :
0 %(LX1 High side PMOS ON Duty)
Secondary side (LX2)
Max Duty :
85 %(LX2 Low side NMOS ON Duty)
Min Duty :
0 %(LX2 Low side NMOS ON Duty)
7. SOFT START
Circuit for preventing in-rush current at startup by bringing the output voltage of the DC/DC converter into a soft-start.
Soft-start time is in synch with the internal OSC, and the output voltage of the DC/DC converter reaches the set voltage
after about 1000 oscillations (About 1 msec when RRT = 39 kΩ).
8. PRE DRIVER
CMOS inverter circuit for driving the built-in Pch/Nch FET.Dead time is provided for preventing feed through during
switching. The dead time is set at about 15 nsec for each individual SWs.
9. STBY_IO
Voltage applied on STB pin (Pin 15) to control ON/OFF of IC.
Turned ON when a voltage of 1.5V or higher is applied and turned OFF when the terminal is open or 0V is applied.
Incorporates approximately 400 kΩ pull-down resistance.
10. Pch/Nch FET SW
Built-in SW for switching the inductor current of the DC/DC converter. Pch FET is about 120mΩ and Nch is 100mΩ.
Since the current rating of this FET is 2A, it should be used within 2A in total including the DC current and ripple current
of the inductor. The peak current of the inductor can be calculated by equation (1), (2), (3).
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TSZ22111・15・001
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BD8306MUV
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Maximum Input Supply Voltage
VCC,PVCC
-0.3 to +7
V
IINMAX
2.0
A
VLX1
7.0
V
VLX2
7.0
V
Maximum Input Current
Maximum Input Voltage
Power Dissipation
(Note 1)
Pd
0.62
W
Storage Temperature
Tstg
-55 to +150
°C
Junction Temperature
Tjmax
+150
°C
(Note 1) When mounted on 74.2x74.2x1.6mm and operated over 25°C Pd reduces by 4.96mW/°C.
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Conditions(Ta=25°C)
Parameter
Symbol
Rating
Min
Typ
Max
1.8
-
5.5
Unit
Power Supply Voltage Range
VCC
Output Voltage Range
VOUT
1.8
-
5.2
V
Operating Temperature Range
Topr
-40
-
+85
°C
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BD8306MUV
Electrical Characteristics (Unless otherwise specified Ta=25°C, VCC=3V)
Min
Limit
Typ
Max
VUV
-
1.7
1.8
V
ΔVUVHY
50
100
150
mV
fOSC
0.9
1.0
1.1
MHz
Input Threshold Voltage
VINV
0.495
0.500
0.505
V
Input Bias Current
IINV
-50
0
+50
nA
VCC=7.0V ,
Soft Start Time
tSS
0.60
1.00
1.40
msec
RRT=39kΩ
Output Source Current
IEO
10
20
30
µA
VINV=0.2V , VFB =1.5V
Output Sink Current
IEI
0.6
1.2
2.4
mA
VINV=0.8V , VFB =1.5V
LX1 Max Duty
DMAX1
-
-
100
%
High side ON Duty
LX2 Max Duty
DMAX2
77
85
93
%
Low side ON Duty
LX1 PMOS ON-Resistance
RON1P
-
120
200
mΩ
VGS=3.0V
LX1 NMOS ON-Resistance
RON1N
-
100
160
mΩ
VGS=3.0V
LX2 PMOS ON-Resistance
RON2P
-
120
200
mΩ
VGS=3.0V
LX2 NMOS ON-Resistance
RON2N
-
100
160
mΩ
VGS=3.0V
VOUT Discharge Switch
RDVO
-
100
160
Ω
VGS=3.0V, on at STB OFF
PVCC=3.0V
Parameter
Symbol
Unit
Conditions
[Under Voltage Lock Out Circuit]
Reset Voltage
Hysteresis Width
VCC sweep up
[Oscillator]
Frequency
RRT=39KΩ
[Error AMP]
VINV=3.5V
[PWM Comparator]
[Output]
LX1 OCP Threshold
IOCP
2.0
3.0
-
A
LX1 Leak Current
ILEAK1
-1
0
+1
µA
LX2 Leak Current
ILEAK2
-1
0
+1
µA
VSTBH
1.5
-
5.5
V
VSTBL
-0.3
-
+0.3
V
RSTB
250
400
700
kΩ
VCC Pin
ISTB1
-
-
1
µA
PVCC Pin
ISTB2
-
-
1
µA
VCC Circuit Current
ICC1
-
500
750
µA
PVCC Circuit Current
ICC2
-
10
20
µA
VOUT Circuit Current
ICC3
-
10
20
µA
[STB]
STB Pin
Enable
Control
Disable
Voltage
STB Pull Down Resistance
[Circuit Current]
Stand-By
Current
(Note 2)
VINV=0.8V,
stop DC/DC
(Note 2)
VINV=0.8V,
stop DC/DC
(Note 2)
VINV=0.8V,
stop DC/DC
(Note 2) ICC1, ICC2, ICC3 are currents flowing to VCC, PVCC, VOUT terminals. When the input voltage of INV pin is 0.8V, DC/DC converter operation stops.
Total input current on DC/DC converter operation would be greater than the limit mentioned above. Please refer to Figure 26 and Figure 35 for details about the
total input current under DC/DC converter operation at 3.3V and 5.0V output.
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Typical Performance Curves
(Unless otherwise specified, Ta = 25°C, VCC = 3.7V)
0.505
INV Threshold [V]
Threshold [V]
INVTHRESHOLD[V]
INV
0.510
0.500
VCC=5.0V
0.495
VCC=1.8V
VCC=3.0V
VCC=7.0V
0.490
0
50
100
150
Temperature
:
Ta
[°C]
TEMPERATURE[℃]
Figure 1. INV Threshold vs Temperature
Power Supply Voltage : VCC [V]
Figure 2. INV Threshold vs Power Supply Voltage
1.200
1.200
1.100
1.100
FREQUENCY[MHz]
Frequency [MHz]
FREAUENCY[MHz]
Frequency [MHz]
-50
1.000
1.000
0.900
0.900
0.800
0.800
-50
0
50
100
Temperature : Ta [°C]
TEMPERATURE[℃]
0
150
8
Figure 4. Oscillation Frequency vs Power Supply
Voltage
Figure 3. Oscillation Frequency vs Temperature
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TSZ22111・15・001
2
4
6
Power Supply
Voltage : VCC [V]
VCC[V]
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BD8306MUV
Typical Performance Curves - continued
1.0
[V]
Buffer Voltage
ErrorAmpBUFFER
VOLTAGE[V]
ERRORAMP
VOLTAGE[V]
ERRORAMP
[V]
Buffer Voltage
ErrorAMPBUFFER
1.0
0.8
Ta=-25deg
Ta=-25deg
0.6
0.4
Ta=25deg
Ta=25deg
0.2
Ta=85deg
Ta=85deg
0.0
0.8
0.6
Ta=-25deg
0.4
Ta=25deg
0.2
Ta=85de
g
0.0
1.5
1.6
1.7
1.8
1.5
Power Supply
Voltage : VCC [V]
VCC[V]
Figure 5. ErrorAmp Buffer Voltage vs Power Supply Voltage
(UVLO Detect Threshold)
3.0
1.7
1.8
Figure 6. ErrorAmp Buffer Voltage vs Power Supply Voltage
(UVLO Reset Threshold)
40
35
FB SOURCE CURRENT[uA]
FB Source Current [μA]
2.5
CURRENT[mA]
SINK
FBFB
Current [mA]
Sink
1.6
Power Supply
Voltage : VCC [V]
VCC[V]
2.0
1.5
1.0
0.5
30
25
20
15
10
5
0
0.0
0.0
0.5
1.0
1.5
0.0
2.0
VFB [V]
VFB[V]
1.0
1.5
2.0
VFB [V]
VFB[V]
Figure 7. FB Sink Current vs VFB
(VINV=0.8V)
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©2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
0.5
Figure 8. FB Source Current vs VFB
(VINV=0.2V)
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BD8306MUV
Typical Performance Curves - continued
300
250
0.8
Ta=150deg
[mΩ]
ON-Resistance
RESISTANCE[mΩ]
ON
[V]
Buffer Voltage
ErrorAmp
VOLTAGE[V]
BUFFER
ERRORAMP
1.0
Ta=150deg
0.6
0.4
Ta=25deg
Ta=-60deg
0.2
200
Ta=25deg
150
Ta=-60deg
100
50
0
0.0
0.0
0.4
0.8
1.2
1.6
0
2.0
4
6
8
Figure 10. ON-Resistance vs Power Supply Voltage
(LX1 Pch FET)
Figure 9. ErrorAmp Buffer Voltage vs STB Threshold Voltage
300
300
Ta=150deg
250
[mΩ]
ON-Resistance
RESISTANCE[mΩ]
ON
250
[mΩ]
RESISTANCE[mΩ]
ONON-Resistance
2
PowerVCC[V
Supply Voltage : VCC [V]
STB Threshold
Voltage [V]
STB[V]
200
Ta=25deg
150
Ta=-60deg
100
200
Ta=-60deg
100
50
0
0
2
4
6
Power Supply
VCC[V Voltage : VCC [V]
8
0
2
4
6
Power Supply
VCC[V Voltage : VCC [V]
8
Figure 12. ON-Resistance vs Power Supply Voltage
(LX2 Pch FET)
Figure 11. ON-Resistance vs Power Supply Voltage
(LX1 Nch FET)
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TSZ22111・15・001
Ta=25deg
150
50
0
Ta=150deg
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BD8306MUV
Typical Performance Curves - continued
1,000
300
800
VCC CURRENT[uA]
VCC Current : ICC1 [μA]
[mΩ]
ON-Resistance
RESISTANCE[mΩ]
ON
900
Ta=150deg
250
200
Ta=25deg
150
Ta=-60deg
100
700
600
500
400
300
200
50
100
0
0
0
2
4
6
PowerVCC[V
Supply Voltage : VCC [V]
0
8
Figure 13. ON-Resistance vs Power Supply Voltage
(LX2 Nch FET)
8
Figure 14. VCC Input Current vs Power Supply Voltage
(VINV=0.8V, stop DC/DC)
300
20
250
15
[Ω]
RESISTANCE[Ω]
ONON-Resistance
: ICC2 [μA]
Current
PVCC
CURRENT[uA]
PVCC
2
4
6
Power Supply
Voltage
:
V
CC [V]
VCC[V]
10
5
Ta=150deg
200
Ta=25deg
150
Ta=-60deg
100
50
0
0
0
2
4
6
Power Supply VCC[V]
Voltage : VCC [V]
8
0
Figure 15. PVCC Input Current vs Power Supply
Voltage
(VINV=0.8V, stop DC/DC)
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TSZ22111・15・001
2
4
6
8
Power SupplyVCC[V]
Voltage : VCC [V]
Figure 16. ON-Resistance vs Power Supply Voltage
(VSTB=0V)
(Vout discharge SW)
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BD8306MUV
Typical Performance Curves - continued
5.0
Ta=85deg
OCP Detect Current [A]
OCP DETECT CURRENT[A]
4.0
3.0
Ta=25deg
2.0
Ta=-25deg
1.0
0.0
0
2
4
6
8
Power SupplyVCC[V]
Voltage : VCC [V]
Figure 17. OCP Detect Current vs Power Supply Voltage
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BD8306MUV
Application Information
1. Application Circuit [1] Input: 2.8V to 5.5V, Output: 3.3V / 1.0A, Frequency 1MHz
10µF
(ceramic)
10uF(ceramic)
murata
GRM31CB11A106KA01
PVCC
0Ω
4.7μH
4.7uH
TOKO DE3518C
8
14
VCC
Lx2
LX2
7
15
STB
Lx2
LX2
6
16
RT
10uF(ceramic)
10µF
(ceramic)
murata
GRM31CB11A106KA01
1
2
3
39kΩ
CVCC
C
VCC
1uF
1μF
1µF
VOUT
VOUT
GND
VOUT
VOUT
INV
R
R
RT
RRT
RT
9
PGND
FB
ON/OFF
10
PGND
13
RRVCC
VCC
11
Lx1
LX1
PVCC
12
LX1
Lx1
2.8V2.8～5.5V
to 5.5V
5
3.3V/1.0A
4
CC
120pF
CFB
C
FB
RRINV1
INV1
2200pF
RC
4.7kΩ
56kΩ
RRFB
4.7kΩ
FB 4.7kΩ
RRINV2
INV2
10kΩ
Figure 18. Example of Application Circuit [1]
2. Application Circuit [2] Input: 2.8V to 5.5V, Output: 5.0V / 0.7A, Frequency 1MHz
10μF (ceramic)
13
R
VCC
RVCC
11
10
PVCC
0Ω
14
ON/OFF
15
9
PGND
PVCC
12
Lx1
LX1
2.8～5.5V
2.8～5.5V
LX1
Lx1
murata
GRM31CB11A106KA01
8
4.7μH
4.7uH
TOKO DE3518C
PGND
VCC
LX2
Lx2
STB
LX2
Lx2
7
6
10uF(ceramic)
10μF
(ceramic)
murata
GRM31CB11A106KA01
GND
1
2
3
VOUT
VOUT
INV
RT
FB
16
R
RT
RRT
VOUT
VOUT
5
5.0V/0.7A
3.3V/1.0A
39kΩ
4
CC
120pF
CVCC
1µF
CVCC
1uF
C
FB
CFB
RRINV1
INV1
2200pF
82kΩ
RRFB
FB
4.7kΩ
RRINV2
INV2
Figure 19. Example of Application Circuit [2]
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RC
4.7kΩ
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9.1kΩ
TSZ02201-0Q3Q0NZ00340-1-2
10.Aug.2016 Rev.003
BD8306MUV
3. Sample Board Layout
Figure 20. Assembly Layer
Figure 21. Bottom Layer
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BD8306MUV
4. Reference Application Data (Unless otherwise specified, Ta = 25°C, VCC = 3.7 V)
Sample Application 1
100
3.36
90
3.34
VOLTAGE[V]
OUTPUT
: VOUT [V]
Output Voltage
Efficiency [%]
TotalEFFICIENCY[%]
TOTAL
80
70
VCC=4.2V
60
50
VCC=3.7V
40
30
20
VCC=2.8V
3.32
3.30
3.28
3.26
10
0
3.24
1
10
100
1,000
1.5
Figure 22. Total Efficiency vs Output Current
(Power Conversion Efficiency)
3.5
4.5
5.5
Figure 23. Output Voltage vs Power Supply Voltage
(Output Current = 500mA)
2,000
OUTPUT
MAXIMUM
Current [mA]
Output CURRENT[mA]
Maximum
3.36
3.34
Output Voltage : VOUT [V]
OUTPUT VOLTAGE[V]
2.5
Power SupplyVCC[V]
Voltage : VCC [V]
Output
Current
: IOUT [mA]
OUTPUT
CURRENT[mA]
3.32
3.30
3.28
3.26
3.24
1
10
100
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1,600
1,400
1,200
1,000
800
600
400
200
0
1.5
1000
Output
Current
: IOUT [mA]
OUTPUT
CURRENT[mA]
Figure 24. Output Voltage vs Output Current
1,800
2.5
3.5
4.5
Power Supply Voltage : VCC [V]
VCC[V]
5.5
Figure 25. Maximum Output Current vs Power Supply Voltage
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100
95
16
90
High Side ON Duty [%]
HIGH SIDE ON DUTY[%]
[mA]
Input Current
Total
CURRENT[mA]
INPUT
TOTAL
20
12
8
4
85
LX2
80
LX1
75
70
65
60
55
50
0
1.5
2.5
3.5
4.5
5.5
Power SupplyVCC[V]
Voltage : VCC [V]
1.50
2.50
3.50
4.50
5.50
Power SupplyVCC[V]
Voltage : VCC [V]
Figure 26. Total Input Current vs Power Supply Voltage
(Output Current = 0mA)
Figure 27. High Side ON Duty vs Power Supply Voltage
(LX1, LX2)
VOUT [100mV/div]
STB [5.0V/div]
IOUT [500mA/div]
VOUT [1.0V/div]
Figure 28. Output Current Response
(Output Current = 100mA ⇔ 500mA
5msec/div)
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Figure 29. Soft Start Waveform
(STB: Low to High
500μsec/div)
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STB [5.0V/div]
VOUT [1.0V/div]
Figure 30. Discharge Waveform
(STB: High to Low
500μsec/div)
5. Reference Application Data (Unless otherwise specified, Ta = 25°C, VCC = 3.7V)
Sample Application 2
5.10
100
90
70
VCC=4.2V
60
50
VCC=3.7V
40
30
20
VCC=2.8V
OUTPUT VOLTAGE[V]
Output Voltage [V]
TOTAL EFFICIENCY[%]
Total Efficiency [%]
80
5.05
5.00
4.95
10
4.90
0
1
10
100
1,000
2.5
3.5
4.5
5.5
Power Supply
Voltage : VCC [V]
VCC[V]
Output Current
[mA]
OUTPUT
CURRENT[mA]
Figure 31. Total Efficiency vs Output Current
(Power Conversion Efficiency)
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1.5
Figure 32. Output Voltage vs Power Supply Voltage
(Output Current = 500mA)
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BD8306MUV
2,000
1,800
MAXIMUM OUTPUT CURRENT[mA]
Maximum Output Current [mA]
OUTPUT VOLTAGE[V]
Output Voltage [V]
5.10
5.05
5.00
4.95
4.90
1
10
100
1,600
1,400
1,200
1,000
800
600
400
200
0
1.5
1000
OUTPUT
CURRENT[mA]
Output Current
[mA]
3.5
4.5
5.5
Power Supply
Voltage : VCC [V]
VCC[V]
Figure 33. Output Voltage vs Output Current
Figure 34. Maximum Output Current vs Power Supply
Voltage
100
20
95
16
DUTY[%]
ONON
SIDE
HIGH
Duty [%]
Side
High
CURRENT[mA]
TOTAL
[mA]
Input Current
TotalINPUT
2.5
12
8
4
LX1
90
85
80
75
70
65
60
LX2
55
50
0
1.5
2.5
3.5
4.5
5.5
Power SupplyVCC[V]
Voltage : VCC [V]
2.50
3.50
4.50
5.50
Power Supply VCC[V]
Voltage : VCC [V]
Figure 35. Total Input Current vs Power Supply Voltage
(Output Current = 0mA)
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16/25
Figure 36. High Side ON Duty vs Power Supply Voltage
(LX1, LX2)
TSZ02201-0Q3Q0NZ00340-1-2
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BD8306MUV
6. Selection of Parts for Application
(1) Output Inductor
A shielded inductor that satisfies the current rating (current value, IPEAK
as shown in the drawing below) and has a low DCR (direct current
resistance component) is recommended. Inductor values affect output
ripple current greatly. Ripple current can be reduced as the inductor L
value becomes larger and the switching frequency becomes higher as
shown in the equations below.
Δ IL
Figure 37. Ripple Current
I PEAK IOUT
VIN VOUT VOUT
A
2 L VIN f
I PEAK
I OUT VIN VOUT [VIN VOUT ] VOUT Dc
2 Dc VIN
L VIN VOUT f
I PEAK
IOUT VOUT VOUT VIN VIN
VIN
2 L VOUT f
A
A
; (in step-down mode)
(1)
; (in buck-boost mode)
(2)
; (in step-up mode)
(3)
Where:
η is the Efficiency ( Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Pin B
B
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
Parasitic
Elements
GND
N Region
close-by
Figure 44. Example of monolithic IC structure
13. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below
the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
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BD8306MUV
Ordering Information
B
D
8
3
0
Part Number
6
M
U
V
-
Package
MUV: VQFN016V3030
E2
Packaging and forming specification
E2: Embossed tape and reel
Marking Diagram
VQFN016V3030 (TOP VIEW)
Part Number Marking
B D 8
LOT Number
3 0 6
1PIN MARK
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TSZ22111・15・001
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BD8306MUV
Physical Dimension, Tape and Reel Information
Package Name
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VQFN016V3030
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BD8306MUV
Revision History
Date
26.Nov.2014
17.Feb.2015
Revision
001
002
Changes
New Release
Correction of the writing.
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Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
, transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
