Datasheet
Single-chip Type with Built-in FET Switching Regulator Series
Step-up and inverted
2-channel DC/DC converter
with Built-in Power MOSFET
BD8317GWL
●Description
The BD8317GWL is step-up and inverted 2-channel
switching regulator with integrated internal high-side
MOSFET. With wide input range from 2.5~5.5V ,it
suitable for application of portable item. In addition,The
small package design is ideal for miniaturizing the
power supply.
●Features
■ Wide input voltage range of 2.5V to 5.5 V
■ High frequency operation 0.8MHz
■ Incorporates Nch FET of 230mΩ/22V and Pch
Pow FET of 230mΩ/15V
■ Incorporates Soft Start (4.2msec(typ))and hight
side switch of boost channel
■ Independent ON/OFF signal(STB).
Built-in
discharge SW for step up channel
■ Small package UCSP50L1( 1.8mm×1.5mm, 4×
3 grid, 11pin, WLCSP)
■ Circuits protection OCP,SCP,UVLO,TSD
STRUCTURE :
●Important Specifications
■ Input voltage range
2.5～5.5 [V]
■ Output boost voltage
Input voltage(max)~18 [V]
■ Output inverted voltage
-9.0～-1.0 [V]
■ Maximum current
1.0A](max)
■ Operating frequency
0.8 [MHz] (typ.)
■ Nch FET ON resistance
230[mΩ]
■ Pch FET ON resistance
230[mΩ]
■ Standby current
1[μA](max)
●Package
UCSP50L1 (WLCSP)
1.8mm×1.5mm×0.5mm, 4×3glid,11pin,
●Application
■ LCD battery
■ CCD battery
■ Portable items that are represented by mobile phone
and DSC
Silicon Monolithic Integrated Circuit
●Typical Application Input: 2.5 to 5.5V, ch1 output: -5.0 V /100mA(MAX), ch2 output:5.0 V /100mA(MAX)
0.1uF/10V
20k Ω
100k Ω
Vout1: -5.0V/100mA
10uF/16V
VREF
Vin→
2.5～5.5V
10uH
NON1
LX1
VDD
10uF/10V
DIS1
EN CH1→
STB1
EN CH２→
STB2
HS2L
GND
LX2
10uH
INV2
Vout2: 5.0V/100mA
10uF/16V
160k Ω
30k Ω
Figure 1. Application schematic
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TS22111・14・001
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BD8317GWL
●Pin Description
C
B
A
1
2
3
4
Figure 2. Pin assignment (Bottom view)
Pin No.
Pin Name
Function
A-1
VDD
Power input voltage pin. Connect to input ceramic capacitor bigger than 0.47uF.
A-2
HS2L
Load SW output pin .Connect to inductor
A-3
LX2
Boost channel drain Nch Power MOS. Connect to diode and inductor.
A-4
GND
Ground connection
B-1
LX1
B-3
STB1
B-4
STB2
C-1
DIS1
C-2
VREF
C-3
NON1
C-4
INV2
PchPowerMOS drain of boost channel. Connect to diode and inductor
Enable pin of inverted channel.
ON threshold set to 1.5V. Integrated pull down resistance (800kΩ (typ))
Enable pin of boost channel.
ON threshold set to 1.5V. Integrated pull down resistance (800kΩ (typ))
Discharge SW of inverted channel. Connect to output of inverted channel.
STB1 disable , Output pin voltage is discharged by 100Ω (typ)
Reference voltage of inverted channel.
1.0V(typ) is included in error amp offset
Feedback pin of inverted channel. Connect to feedback resistance and set output voltage.
The method of output voltage setting is P16/20.
When inverted cannel is disable , the pin is discharged by integrated resistance (150Ω (typ))
Feedback pin of boost channel. Connect to feedback resistance and set output voltage.
The method of output voltage setting is P16/20.
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BD8317GWL
●Block Diagram
UVLO
VREF
For Analog
Voltage
Reference
SS1
Phase
Compensation
+
NON1
PROTECT
to Control
TSD
Vin = 2.5～5.5V
10uF
OCP
CH1
Inverting
Timing Control
(Current mode)
SS1 SS2
VDD
LX1
Vo1
DIS1
STB1
SS
Vo1
OSC
0.8MHz
Vo2
SS2
Phase
Compensation
INV2
SS2
High side
switch
CH2
Step up
Timing Control
(Current mode)
+
+
+
+
-
SCP
Timer
HS2L
OCP
LX2
Vo2
GND
ON/OFF
STB1
STB2
Figure 3. Block diagram
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BD8317GWL
●Function blacks description
1.Voltage Reference
This block generates ERROR AMP reference voltage.
The reference voltage of CH1 is 1.0V, The reference voltage of CH2 is 0.8V.
2.UVLO
Circuit for preventing malfunction at low voltage input.
This circuit prevents malfunction at the start of DC/DC converter and low input voltage .The function monitors VCC pin
voltage and if VCC voltage is lower than 2.2V, function turns off all output of FETs and DC/DC converter , and reset the
timer latch of the internal SCP circuit and soft-start circuit.
3.SCP
Short-circuit protection function based on timer latch system.
When the voltage of NON1 pin is higher than 0V or INV2 pin voltage is lower than 0.8V, the internal SCP circuit starts
counting.
SCP circuit detects output of Error AMP. Since internal Error AMP has highly gain as high as 80dB or more, if input
erroramp voltage cross reference voltage ,the output voltage of Error AMP goes high and detects SCP .
The internal counter is in synch with OSC, the latch circuit activates after the counter counts oscillations to turn off DC/DC
converter output (about 40.9 msec ).
To reset the latch circuit, turn off the STB pin once. Then, turn it on again or turn on the power supply voltage again.
4.OSC
This function determine oscillation frequency . Oscillation frequency of DC/DC converter set at 0.8MHz.
5.ERROR AMP
Error amplifier watch output voltage and output PWM control signals.
The internal reference voltage for Error AMP of ch1 is set at 0V.
The internal reference voltage for Error AMP of ch2 is set at 0.8V.
6.Timing Control
Voltage-pulse width converter for controlling output voltage corresponding to input voltage.
Comparing the internal SLOPE waveform with the ERROR AMP output voltage, PWM COMP controls the pulse width
and outputs to the driver.
Max Duties of ch1 and ch2 are set at 86%.
7.SOFT START
Circuit for preventing in-rush current at the start of DC/DC converter by bringing the output voltage.
Soft-start time is in synch with the internal OSC, and the output voltage of the DC/DC converter reaches the set voltage
after about 4.2m sec.
8.OCP
Circuit for preventing malfunction at over current.
Under input current over electrical characteristics , it supply minimum duty to DC/DC converter and IC stop safety by SCP
detected.
9.TSD
Circuit for preventing malfunction at high Temperature .
When it detects an abnormal temperature exceeding Maximum Junction Temperature (Tj=150℃), it turns OFF all Output
FET, and turns OFF DC/DC Comparator Output.
10. ON/OFF
Voltage applied on STB pin to control ON/OFF channel of each channel.
Turned ON when a voltage of 1.5 V or higher is applied and turned OFF when the terminal is open or 0 V is applied.
Incorporates approximately 800 kΩ pull-down resistance.
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BD8317GWL
●Absolute maximum ratings(T=25℃)
Parameter
Symbol
Rating
Unit
VDD
－0.3～7
V
Maximum power supply voltage
STB1,STB2
－0.3～7
V
IHS2L
1.0
A
Maximum input current
ILX1
1.0
A
ILX2
1.0
A
VDD-LX1
15
V
LX2
22
V
Maximum input voltage
NON1
-0.3～7
V
INV2
-0.3～7
V
DIS1
-9～0.3
V
Power dissipation
Pd
730
mW
Operating temperature range
Topr
－35～+85
℃
Storage temperature range
Tstg
－55～+150
℃
Junction temperature
Tjmax
+150
℃
((*1) When mounted on 74.2×74.2×1.6mm and operated over 25℃ Pd reduces by 4.96mW/℃.
●Recommended operating conditions
Parameter
Symbol
Power supply voltage
Inverted output voltage
Step up output voltage
VDD
VO1
VO2
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TS22111・14・001
MIN
2.5
-9.0
VCC
5/20
Standard value
TYP
MAX
－
5.5
－
-1.0
18
Units
V
V
V
TSZ02201-0Q2Q0AJ00010-1-2
2012.09.5 Rev. 001
BD8317GWL
●Electrical characteristics（Ta=25℃, VDD=3.6V）
Parameter
MIN
Standard value
TYP
MAX
50
2.2
100
2.35
150
V
mV
0.72
82
82
0.8
86
86
0.88
90
90
MHz
%
%
VO1
-5.06
-5.00
-4.94
V
DVLi
VINV
INON1
IINV2
TSS1
TSS2
0.792
-50
-50
3.7
3.7
4.0
0.800
0
0
4.2
4.2
12.5
0.808
50
50
4.7
4.7
mV
V
nA
nA
ms
ms
RON1p
RDIS1
RNON1
RON2p
RON2n
Iocp1
Iocp2
IleakH1
I leak1
I leak2
1.2
1.2
-1
-1
-1
230
100
150
130
230
2.4
2.4
0
0
0
480
160
240
220
480
1
1
1
mΩ
Ω
Ω
mΩ
mΩ
A
A
uA
uA
uA
VSTBH
VSTBL
RSTB1
1.5
-0.3
500
800
5.5
0.3
1400
V
V
kΩ
ISTB
-
-
1
uA
Symbol
【Low voltage input malfunction preventing circuit】
Detect threshold voltage
VUV
Hysteresis voltage
Δ VUVhy
【Oscillator】
Oscillating frequency
Fosc
LX1 Max Duty
Dmax1
LX2 Max Duty
Dmax2
【Error AMP, VREF】
CH1output voltage
VREF line regulation
INV threshold voltage
NON1 input bias current
INV2 input bias current
CH1 Soft start time
CH2 Soft start time
【Internal FET】
LX1 PMOS ON resistance
DIS1discharge resistance
NON1 discharge resistance
LX2HighsideSW ON resistance
LX2 NMOS ON resistance
LX1 OCP threshold
LX2 OCP threshold
HS2L leak current
LX1 leak current
LX2 leak current
【STB】
Active
STB pin
Control voltage
Non-active
STB pin pull down resistance
【Circuit current】
Standby current
Unit
Conditions
VDD sweep down
NON1 feedback resistance
20kΩ , 100kΩ
VDD=2.5～5.5V
STB1=3.6V, NON1=-0.2V
INV2=1.2V
VSTB1=0V, IDIS1=-1mA
VSTB1=0V, INON1=1mA
STB1=STB2=3.6V
NON1=-0.2V, INV2=1.2V
◎This product is not designed for normal operation within a radioactive environment.
Circuit current of operation VDD
IDD
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TS22111・14・001
-
500
6/20
650
uA
TSZ02201-0Q2Q0AJ00010-1-2
2012.09.5 Rev. 001
BD8317GWL
●Reference data
(unless otherwise specified Ta=25℃, VCC=3.6V)
VCC=2.5V
VCC=3.6V
VCC=4.2V
VCC=2.5V
Figure 4. VREF vs temp
VCC=3.6V
VCC=4.2V
Figure 5. INV2 threshold vs temp
Reset threshold
VCC=2.5V
VCC=3.6V
VCC=4.2V
Detect threshold
Figure 7. UVLO detect threshold
Vs temp
Figure 6. Oscillation frequency vs temp
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BD8317GWL
VCC=2.5V
VCC=3.6V
VCC=2.5V
VCC=4.2V
500
500
450
450
400
400
350
300
250
200
T=150℃
150
T=25℃
T=-60℃
100
350
300
200
T=25℃
150
T=-60℃
100
50
0
0
2
4
6
8
0
VCC[V]
2
4
6
8
VCC[V]
Figure 10. LX1 high side FET ON
registance vs VCC
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TS22111・14・001
T=150℃
250
50
0
VCC=4.2V
Figure 9. STB OFF threshold voltage
vs temp
ON RESISTANCE[mΩ]
ON RESISTANCE[mΩ]
Figure 8. STB ON threshold voltage
vs temp
VCC=3.6V
Figure 11. LX2 high side FET ON
registance vs VCC
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BD8317GWL
300
500
450
250
ON RESISTANCE[Ω]
ON RESISTANCE[mΩ]
400
350
300
250
T=150℃
200
T=25℃
150
T=-60℃
100
200
150
100
T=150℃
T=25℃
50
50
0
T=-60℃
0
0
2
4
6
8
0
VCC[V]
2
4
6
8
VCC[V]
Figure 12. HS2L high side FET ON
registance vs VCC
Figure 13. DIS1 discharge SW ON
registance vs VCC
300
VCC CURRENT [uA]
ON RESISTANCE[Ω]
250
200
150
100
T=150℃
T=25℃
50
T=-60℃
0
0
2
4
6
8
VCC[V]
VCC[V]
Figure 15. VCC input current vs VCC
(STB ON)
Figure 14. NON1 discharge SW ON
registance vs VCC
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BD8317GWL
VCC=4.2V
VCC=3.6V
VCC=2.5V
Figure 16. VCC input current vs Temp
(STB OFF)
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BD8317GWL
●Example of Application1 Input: 2.5 to 5.5 V, ch1 output: -5.0 V / 100m A(MAX), ch2 output:5.0V/100mA(MAX)
10μF/16V
0.1μF/10V
100kΩ
160kΩ
20kΩ
30kΩ
30V/200mA
(RB521-S30)
10μH
(DFE252012C)
10μH
BD8317GWL
CSP-SMT
10μF/10V
(DFE252012C)
30V/200mA
(RB521-S30)
10μF/16V
Figure 17. Example of Application1
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BD8317GWL
●Example of Board Layout
ROHM SMD Evaluation Board
Figure 18. Assembly Layer
Figure 19. Bottom Layer
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BD8317GWL
●Typical Performance Characteristic
(Unless otherwise specified, Ta = 25°C, VCC = 3.6V)
(Example of application 1)
Figure 20. CH1 Power conversion
efficiency vs output current
Figure 21. CH2 Power conversion
efficiency vs output current
Figure 22. CH1 Output voltage
vs Output Current
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TS22111・14・001
Figure 23. CH2 Output voltage
vs Output Current
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BD8317GWL
Figure 24. CH1 Output voltage
vs Input voltage
Figure 25. CH2 Output voltage
vs Input voltage
5msec/div
5msec/div
Vo1=100mV/div
Vo2=100mV/div
Io=100mA/div
Io=100mA/div
Figure 26. CH1 Output current response
(output current : 10mA ⇔ 100mA)
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TS22111・14・001
Figure 27. CH2 Output current response
(output current : 10mA ⇔ 100mA)
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BD8317GWL
Figure 29. CH2 Soft start waveform
Figure 28. CH1 Soft start waveform
Figure 30. CH1 Discharge waveform
[500usec/div]
(STB1:High → Low)
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BD8317GWL
●Selection of Parts for Applications
(1)Output inductor
A shielded inductor that satisfies the current rating (current value, Ipeak as shown in the drawing below) and has a low
DCR (direct current resistance component) is recommended.
Inductor values affect output ripple current greatly.
Ripple current can be reduced as the inductor L value becomes larger and the
switching frequency becomes higher as the equations shown below.
Δ IL
I peak
I peak
Vin Vout V f
Vin
I out
Vin (Vout V f )
1
(Inverted channel)
2 L f (Vin Vout V f )
I Vout 1 Vin (Vout Vin )
out
Vin
2
L f Vout
Fig.ure 31. Ripple current
(Boost channel)
η: Efficiency( (terminal A) at the resistor and GND > (terminal B) at the transistor (NPN), the P-N junction operates as
a parasitic diode.
○When GND > (terminal B) at the transistor (NPN), a parasitic NPN transistor operates as a result of the NHayers of other
elements in the proximity of the aforementioned parasitic diode.
Parasitic elements are structurally inevitable in the IC due to electric potential relationships. The operation of parasitic elements
Induces the interference of circuit operations, causing malfunctions and possibly the destruction of the IC. Please be carefu l not to
use the IC in a way that would cause parasitic elements to operate. For example, by applying a voltage that is lower than the
GND (P-board) to the input terminal.
E
GND
N
P
＋
P
N
N
P-board
＋
P
＋
P
P
N
N
Ｎ
Parasitic
element
P
Parasitic element
N
P-board
Parasitic
element
（Terminal A）
＋
～
～
C
～
Transistor (NPN)
B
Resistor
（Terminal A）
（Terminal B）
GND
GND
Figure 35. Simplified structure of a Bipolar IC
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BD8317GWL
●Ordering part number
B
D
8
Part No.
3
1
7
G
Part No.
W
L
Package
GWL: UCSP50L1
-
E2
Packaging and forming specification
E2: Embossed tape and reel
●External information
1 PIN MARK
Lot No .
5
0
.
0
±
5
.
1
8317
1.8± 0. 05
(BD8316GWL)
(BD8317GWL)
5
0
.0
±
1
.0
X
A
M
5
5
.0
S
0.06
S
5
0
.0
±
5
3
.0
11-φ 0. 20± 0. 05
0.05 A B
A
(φ 0.15 )INDEX POST
C
B
B
A
1
0.3± 0. 05
2
3
P= 0 . 4 × 3
4
2
×
4
.
0
=
P
(BD8317GWL)
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Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
