BD8643FV

1/4 STRUCTURE PRODUCT NAME MODEL NAME FEATURES ： ： ： Silicon Monolithic Integrated Circuit Synchronous rectification with built-in FET type DC/DC converter IC BD8643FV ： ・Synchronous rectification with built-in FET type DC/DC converter ・Output current 3A ・Reference voltage accuracy FB 0.8V±1% ・Switching frequency 100kHz～600kHz ・Over current protection circuit ・Thermal shutdown ・Input low voltage detection UVLO ・Soft start / Start delay circuit ・Programmable OFFLATCH time ◎ABSOLUTE MAXIMUM RATING Parameter Input supply voltage BOOT terminal voltage EN terminal voltage Input terminal voltage SW terminal voltage Output switch current Power dissipation Operating temperature Storage temperature （Ta=25℃） Symbol VIN VBOOT VEN VINP*1 VSW IOUT Pd Topr Tstg Limits 20 28 GND-0.3 ～ VIN+0.3 GND-0.3 ～ 7 GND-0.3 ～ VIN+0.3 3.5*2 2.06*3 -20 ～ 85 -55 ～ 150 150 Unit V V V V V A Ｗ ℃ ℃ ℃ Maximum Junction Tjmax Temperature ＊1 VINP Application terminal： SS/DELAY, FB, FC, RT, PSET ＊2 Do not however exceed Pd. ＊3 （70mm×70mm, thickness 1.6mm, and four layer glass epoxy substrates）When mounting substrate and the package back exposure part are connected with solder. Operating at higher than Ta=25℃, 9.5mW shall be reduced per 1 ◎Operation condition Parameter Input supply voltage Output switch current Symbol VIN IOUT MIN 4.5 TYP MAX 18.0 3.0 Unit Ｖ A This product is not designed for protection against radioactive rays. REV. A 2/4 ◎Electrical characteristic (Unless otherwise noted Ta=25℃, VIN=12V, VEN = 3V) Parameter VIN supply current (operating) VIN supply current (standby) Reference voltage Oscillation frequency High side FET ON resistance Low side FET ON resistance UVLO voltage SW leak current EN terminal H threshold voltage EN terminal L threshold voltage SS/DELAY terminal source current SS/DELAY – FB Offset voltage PSET terminal source current PSET terminal threshold voltage ●Current capability should not exceed Pd. Symbol IQ active IQ ｓｔｂｙ VFB ｆOSC RHFET RLFET VUVLO ILSW VENH VENL ISSSO VSSFBOST IPSET VPSET MIN 0.792 270 3.8 1.6 2.8 450 3 0.8 Specification value TYP 1.5 0.8 0.8 300 110 110 4.0 0 4 600 5 1.0 MAX 2.5 1.2 0.808 330 160 160 4.2 5 0.4 5.2 750 7 1.2 UNIT mA mA V kHz mΩ mΩ V μA V V μA mV μA V Condition VFB = 0.75V VEN = 0V FB-FC Short RRT= 56kΩ ISW = -1A ISW = 1A VIN Sweep VEN= 0V VSS= 1V VSS= 1V VPSET= 2V ●VFB :FB terminal voltage、VEN :EN terminal voltage、VSS :SS/DELAY terminal voltage, VPSET :PSET terminal voltage, RRT :RT resistor REV. A 3/4 ◎BLOCK DIAGRAM FB 11 FC 12 RT 13 PSET 14 EN 15 NC 16 NC 17 VIN 18 VIN 19 VIN 20 1 2 PGND 3 PGND 4 PGND EN PWM CONTROL 6 SW 5 SW VOUT Protect time OSC 5V GND 10 SS Softstart/Delay 9 NC 8 CURRENT DET BOOT 7 SW ◎PIN ASSIGNMENT No. 1 2 3 4 5 6 7 8 9 10 Symbol PGND PGND PGND SW SW SW BOOT NC SS/DELAY GND Description Power GND terminal Power GND terminal Power GND terminal Switching output terminal Switching output terminal Switching output terminal Boot strap terminal Soft start adjustment capacity connection terminal Signal GND terminal No. 11 12 13 14 15 16 17 18 19 20 Symbol FB FC RT PSET EN NC NC VIN VIN VIN Description Feedback terminal Phase amends terminal Frequency adjustment resistance connection terminal Adjust OFF LATCH time terminal Enable input Power supply input terminal Power supply input terminal Power supply input terminal ◎PACKAGE OUTLINE Product number BD8643 1PIN MARK Lo No. SSOP-B20W (UNIT：mm) REV. A 4/4 ◎NOTE ON USE 1．About the absolute maximum rating Attention is brushed off enough to the quality control, it is likely to destroy when the absolute maximum rating such as impressed voltages (VCC_IN,DCIN) and ranges (Topr) of the operating temperature as it is exceeded, the mode of breakings of the short or the opening, etc. cannot be specified, and examine it in this IC to give physical measures for safety such as fuses when a special mode that exceeds the absolute maximum rating is assumed. 2．GND pin voltage GND terminal should be connected the lowest voltage, under all conditions. And all terminals except SW should be under GND terminal voltage under all conditions including transient situations. If a terminal exists under GND,it should be inserting a bypass route. 3．Power dissipation If IC is used on condition that the power loss is over the power dissipation, the reliability will become worse by heat up, such as reduced output current capability. Also, be sure to use this IC within a power dissipation range allowing enough of margin. 4．Input supply voltage Input supply pattern layout should be as short as possible. 5．About the short and the miss-installation between terminals Note the direction and the miss-registration of IC enough when you install it in the set substrate. IC might destroy it as well as reversely connecting the power supply connector when installing it by mistake. Moreover, there is fear of destruction when the foreign body enters between terminals, the terminal, the power supply, and grandeur and it is short-circuited. 6．About operation in strong electromagnetic field In use in strong electromagnetic field, note that there is a possibility of malfunctioning. 7．About the inspection by the set substrate It is likely to suffer stress to IC and discharge electricity every one process when you connect the capacitor with the pin with low impedance when inspecting it in the set substrate. Moreover, detach it after connecting after the power supply is turned off without fail when detaching it to G in the inspection process, inspecting, and turning off the power supply. n addition, be give the earth to the assembly process as a static electricity measures, and careful enough when it transports and you preserve it. 8．About each input terminal This IC is a monolithic IC which has a P+ isolations and P substrate to isolate elements each other. This P layer and an N layer in each element form a PN junction to construct various parasitic elements. For instance, the potential difference operates in resistance as shown in the figure below when resistance and the transistor connect it with the terminal and the playground (GND) >(terminal B) joint of PN operates as a parasitic diode in playground (GND) >(terminal A) transistor (NPN). In addition, the NPN transistor of parasitism works with N layer of the element of the above-mentioned parasitic diode and the neighborhood and others in transistor (NPN). A parasitic element in IC composition is inevitably formed because of the potential relation. A parasitic element can operate, the interference with the circuit operation be caused, it malfunction, and, consequently, it cause destruction. Therefore, do not do the usage that a parasitic element operates as a voltage that is lower than the playground (GND;P substrate) is impressed to the input terminal enough. Moreover, do not impress the voltage to the input terminal when you do not impress the power-supply voltage to IC. Give each input terminal to me the voltage below the power-supply voltage or in the guarantee value of an electric characteristic when you similarly impress the power-supply voltage. Example of IC of simple structure 9．Earth wiring pattern If small signal GND and large current GND exist, disperse their pattern. In addition, for voltage change by pattern wiring impedance and large current not to change voltage of small signal GND, each ground terminal of IC must be connected at the one point on the set circuit board. As for GND of external parts, it is similar to the above-mentioned. 10. SW terminal A counter-electromotive force may generate a negative potential at the SW terminal during connection to the particular application. Therefore, it should be inserting a bypass route between SW to GND. 11. About each output terminal We recommend to put Diode for protection purpose in case of output pin connected with large load of impedance or reserve current occurred at initial and output off. 12. Thermal Shut Down Circuit A temperature control is built in the IC to prevent the damage due to overheat. Therefore, the outputs are turned off when the thermal circuit works. 13. Over Output Current Protection SW Output terminal has over current protection circuit of 5A, with prevents IC from being damage by short circuit at over current. However, It is recommend not to use that continuously operates the protection circuit (For instance, always the load that greatly exceeds the output current ability is connected or the output is short-circuited, etc.) in these protection circuits by an effective one to the destruction prevention due to broken accident. REV. A Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2009 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster @ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix-Rev4.0