BD88030FV-E2

Datasheet For Gas Water Heaters Interface IC BD88030FV General Description Key Specifications BD88030FV is a monolithic IC with two channel 4-bit D/A converters for water heaters, a pseudo-sine wave output circuit, and an external analog-signal detector. ◼ Operating Power Supply Voltage Range: 4.5 V to 5.5 V ◼ Circuit Current: 2.5 mA (Typ) ◼ Detection Frequency: 250 kHz (Typ) ◼ Operating Temperature Range: -20 °C to +80 °C Features ◼ ◼ ◼ ◼ ◼ Built-in 2 Channels of 4-bit D/A Converter Built-in Pseudo-sine Wave Output Circuit (Divided by 1/16 of the External Clock) External Analog Signal Detection Circuit Built-in Analog Switch 2 Channels Built-in Electrostatic Protection Circuit Package W (Typ) x D (Typ) x H (Max) SSOP-B16 5.0 mm x 6.4 mm x 1.35 mm Applications ◼ Water Heater Pin Configuration Pin Description (TOP VIEW) OSCIN 1 16 VDD OSCOUT 2 15 SW1OUT FOUT 3 14 SW1IN SCTLB 4 13 SOUT+ RESETB 5 12 SOUT- AMPOUT 6 11 SW2IN AMPIN 7 10 SW2OUT VSS 8 9 〇Product structure : Silicon integrated circuit www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. (Link) TSZ22111 • 14 • 001 DOUTB Pin No. Pin Name Function 1 OSCIN Resonator connection pin 2 OSCOUT Resonator connection pin 3 FOUT 4 SCTLB 5 RESETB 6 AMPOUT 7 AMPIN OSC buffer output Modulation control signal input Reset signal input Normally set to "H" Amplifier signal output Used as a test pin Use it open. Amplifier signal input 8 VSS 9 DOUTB 10 SW2OUT 11 SW2IN 12 SOUT- 13 SOUT+ Analog switch 2 input Pseudo-sinusoidal output (anti-phase outputting of SOUT+) Pseudo-sinusoidal output 14 SW1IN Analog switch 1 input 15 SW1OUT 16 VDD GND pin Amplifier input signal detection output Analog switch 2 output Analog switch 1 output Power supply pin 〇This product has no designed protection against radioactive rays. 1/26 TSZ02201-0GNG2HZ00010-1-2 16.Feb.2022 Rev.001 BD88030FV Block Diagram OSCIN 1 16 VDD OSCOUT 2 15 SW1OUT FOUT 3 14 SW1IN SCTLB 4 4Bit R2R DAC 13 SOUT+ 4Bit R2R DAC 12 SOUT- 11 SW2IN 10 SW2OUT 0° Pseudo-Sine Wave Gen Block RESETB 5 AMPOUT 6 AMPIN VSS 7 180° + + - R Q Period measurement counter S Q Det/Undet Judge Block 8 www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. (Link) TSZ22111 • 15 • 001 2/26 9 DOUTB TSZ02201-0GNG2HZ00010-1-2 16.Feb.2022 Rev.001 BD88030FV Absolute Maximum Ratings (Ta = 25 °C) Parameter Symbol Rating Unit Power Supply Voltage VDD -0.3 to +7.0 V Input Voltage VIN -0.3 to VDD + 0.3 V Input Current II ±1 mA Tstg -55 to +125 °C Tjmax 125 °C Storage Temperature Range Maximum Junction Temperature Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction temperature rating. Thermal Resistance(Note 1) Parameter Symbol Thermal Resistance (Typ) 1s(Note 3) 2s2p(Note 4) Unit SSOP-B16 Junction to Ambient θJA 140.9 77.2 °C/W Junction to Top Characterization Parameter(Note 2) ΨJT 6 5 °C/W (Note 1) Based on JESD51-2A(Still-Air). (Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 3) Using a PCB board based on JESD51-3. (Note 4) Using a PCB board based on JESD51-7. Layer Number of Measurement Board Single Material Board Size FR-4 114.3 mm x 76.2 mm x 1.57 mmt Top Copper Pattern Thickness Footprints and Traces 70 μm Layer Number of Measurement Board 4 Layers Material Board Size FR-4 114.3 mm x 76.2 mm x 1.6 mmt Top 2 Internal Layers Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70 μm 74.2 mm x 74.2 mm 35 μm 74.2 mm x 74.2 mm 70 μm Recommended Operating Conditions Parameter Symbol Min Typ Max Unit Operating Supply Voltage Vopr 4.5 5.0 5.5 V Operating Temperature Topr -20 - +80 °C www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. (Link) TSZ22111 • 15 • 001 3/26 TSZ02201-0GNG2HZ00010-1-2 16.Feb.2022 Rev.001 BD88030FV Electrical Characteristic (VDD = 5 V, VSS = 0 V, Ta = 25 °C unless otherwise specified) VIHOSCIN VILOSCIN IIHOSCIN IILOSCIN ROSCIN IIH1 IIL1 VIH1 VIL1 IIHRESETB IILRESETB VOH VOL IIHAMPIN IILAMPIN VB Min 1 0.7VDD VSS 2 -12 525 -0.5 0.65VDD VSS -455 VDD-0.5 VSS 185 -240 - Limit Typ 4 2.5 700 1.63 Max 10 10.0 VDD 0.3VDD 12 -2 875 0.5 VDD 0.35VDD 0.5 -200 VDD VSS + 0.6 555 -100 - MHz mA V V µA µA kΩ µA µA V V µA µA V V µA µA V AMP Input Sensitivity VPPIN 0.30 - 0.45 V Detection Frequency Range fDETON 236 250 266 kHz fOSC = 4 MHz fDETOFF1 - - 216 kHz fOSC = 4 MHz fDETOFF2 290 - - kHz fOSC = 4 MHz Analog Switch-off Leakage Current IOFFSW - - 1 µA Analog Switch-on Resistance RONSW 35 60 105 Ω VPPSOUT 0.85VDD - VDD V fSOUT - 250 - kHz fOSC = 4 MHz ZSOUT 2.8 - 5.2 kΩ No load pSOUT -5 - +5 Deg Parameter Oscillation-frequency(Note 1) Supply Current OSCIN "H" Input-voltage OSCIN "L" Input-voltage OSCIN "H" Input Current OSCIN "L" Input Current OSCIN Feedback Resistor(Note 1) "H" Input Current "L" Input Current "H" Input Voltage "L" Input Voltage RESETB "H" Input Current RESETB "L" Input Current "H" Output Voltage "L" Output Voltage AMPIN "H" Input Current AMPIN "L" Input Current AMP Input Biased Voltage(Note 1) Non-Detection Frequency Range (Low Frequency) Non-Detection Frequency Range (High Frequency) SOUT Maximum Output Amplitude Pseudo-Sine Wave Output Frequency Equivalent Output Impedance Pseudo-Sine Wave Output-phase-variation(Note 1) Symbol fOSC IDD Unit Conditions fOSC = 4 MHz, no load VIN = VDD VIN = 0 V VIN = VDD, (SCTLB) VIN = 0 V, (SCTLB) (RESETB, SCTLB) (RESETB, SCTLB) VIN = VDD VDD = 5 V, VIN = 0 V IOH = -1 mA, (FOUT, DOUTB) IOL = 1 mA, (FOUT, DOUTB) VIN = VDD VIN = 0 V No load 250 kHz, no load 0.3 Input voltage below V is not detected. 0.45 The input voltage of V or higher is detected. SWxIN = VDD, SWxOUT = 0 V x = 1, 2 SWxIN = VDD, SWxOUT = 0 V x = 1, 2 No load (Note 1) Not 100 % Tested www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. (Link) TSZ22111 • 15 • 001 4/26 TSZ02201-0GNG2HZ00010-1-2 16.Feb.2022 Rev.001 BD88030FV Function Description 1. Pseudo-Sine Wave Generation Circuit 4-Bit D/A Converter Block (Transmit Block) The pseudo-sine wave output pins (SOUT+ and SOUT-) output a pseudo-sine wave with a frequency of fOSC/16. The SOUT+ and SOUT- pins are in the opposite phase. The pseudo-sine wave generator and 4-bit D/A converter are shown in the figure below (SOUT+ pin side). SOUT+ fosc R R R R R SOUT+ R R R R LSB R SOUT- R 2R Pseudo-Sine Wave Gen Block MSB VSS RST The data of the pseudo-sine wave generator is output in the sequence shown in the figure below. 0→1→3→6→9→C→E→F→F→E→C→9→6→3→1→0 (hexadecimal) F F E E C C 9 9 6 0 1 6 3 3 f SOUT 1 0 250 kHz @f OSC = 4 MHz Therefore, the pseudo-sine waveform of the positive-phase output and negative-phase output at no load is stepped. An analog switch is incorporated to connect the driver output buffer to the transmission line only when transmitting. However, the driver output buffer connects an emitter follower circuit externally. The phase difference between positive-phase output and negative-phase output is within 180 degrees ±5 degrees. (Pseudo-Sine Wave Output Phase Fluctuation) www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. (Link) TSZ22111 • 15 • 001 5/26 TSZ02201-0GNG2HZ00010-1-2 16.Feb.2022 Rev.001 BD88030FV Function Description - continued 2. Amplifier Input Circuit, Detection/Non-Detection Circuit (Receiver) The modulation signal input section incorporates a high-low two-level comparator so that an external sine wave can detect only a specified amplitude or more, preventing false detection of signals (e.g., noise signals) with a specified amplitude or less. The detection frequency range (frequency window) is determined by f OSC from 1/18 to 1/14. Detection/non-detection decision conditions control the signal when signals in the frequency window are detected (or not detected) continuously. In this case, fOSC/16 frequency is used as the reference (single wave) and the duration is 9 to 13 waves. VDD Reference Voltage VH High Detection Comparator VA — APU R1 VDD R2 R Det/ Undet Judge Block Period Counter Q 9 DOUTB VBIAS 7 Reference Voltage VL R4 APU R3 AMPIN VSS VB — S RESET — Q 6 AMPOUT Low Detection Comparator VSS AMPIN Input Sine Wave Form VH AMP input sensitivity V PP VL Detect Not Detect Not Detect Not Detect AMPOUT Output Timing (RESETB ＝ L) AMPOUT Output Table VH VBIAS VL VBIAS>VH H Keep AMPOUT VBIASVBIAS>VL VH>VBIAS>VL VB AMPOUT L H L H H Keep H L H VBIAS>VH VH>VBIAS>VL www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. (Link) TSZ22111 • 15 • 001 VBIAS Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Resistor Transistor (NPN) Pin A Pin B C Pin A N P+ N P N P+ N Parasitic Elements N P+ GND E N P N P+ B N C E Parasitic Elements P Substrate P Substrate Parasitic Elements Pin B B Parasitic Elements GND GND Figure 40. Example of Monolithic IC Structure N Region close-by GND 11. Ceramic Capacitor When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. (Link) TSZ22111 • 15 • 001 23/26 TSZ02201-0GNG2HZ00010-1-2 16.Feb.2022 Rev.001 BD88030FV Ordering Information B D 8 8 0 3 0 F V - Package FV: SSOP-B16 E 2 Packaging and forming specifications E2: Reel-like embossed taping Marking Diagram SSOP-B16 (TOP VIEW) Part Number Marking 88030 LOT Number Pin 1 Mark www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. (Link) TSZ22111 • 15 • 001 24/26 TSZ02201-0GNG2HZ00010-1-2 16.Feb.2022 Rev.001 BD88030FV Physical Dimension and Packing Information Package Name www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. (Link) TSZ22111 • 15 • 001 SSOP-B16 25/26 TSZ02201-0GNG2HZ00010-1-2 16.Feb.2022 Rev.001 BD88030FV Revision History Date Revision 16.Feb.2022 001 Details of revision New Release www.rohm.com © 2022 ROHM Co., Ltd. All rights reserved. (Link) TSZ22111 • 15 • 001 26/26 TSZ02201-0GNG2HZ00010-1-2 16.Feb.2022 Rev.001 Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. 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Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PGA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Precautions Regarding Application Examples and External Circuits 1. 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Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001