Synchronous Buck Converter Integrated FET
BD9106FVM BD9107FVM BD9109FVM BD9110NV BD9120HFN
●General Description ROHM’s high efficiency step-down switching regulators (BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,B D9120HFN) are the power supply designed to produce a low voltage including 1 volts from 5/3.3 volts power supply line. Offers high efficiency with our original pulse skip control technology and synchronous rectifier. Employs a current mode control system to provide faster transient response to sudden change in load. ●Features Offers fast transient response with current mode PWM control system. Offers highly efficiency for all load range with synchronous rectifier (Nch/Pch FET) TM and SLLM (Simple Light Load Mode) Incorporates soft-start function. Incorporates thermal protection and ULVO functions. Incorporates short-current protection circuit with time delay function. Incorporates shutdown function ●Application Power supply for LSI including DSP, Micro computer and ASIC ●Key Specifications Input voltage range BD9120HFN: BD9106FVM,BD9107FVM: BD9109FVM,BD9110NV: Output voltage range BD9109FVM: BD9120HFN: BD9107FVM: BD9106FVM,BD9110NV: Output current BD9106FVM, BD9109FVM, BD9120HFN: BD9107FVM: BD9110NV: Switching frequency: FET ON resistance BD9110NV: BD9106FVM,BD9107FVM: BD9120HFN,BD9109FVM: Standby current: Operating temperature range BD9110NV: BD9120HFN,BD9106FVM: BD9107FVM,BD9109FVM: ●Packages HSON8 MSOP8 SON008V5060 2.7V to 4.5V 4.0V to 5.5V 4.5V to 5.5V 3.30V ± 2% 1.0V to 1.5V 1.0V to 1.8V 1.0V to 2.5V
0.8A(Max.) 1.2A(Max.) 2.0A(Max.) 1MHz(Typ.) Pch(Typ.) 200mΩ 350mΩ 350mΩ / Nch(Typ.) / 150mΩ / 250mΩ / 250mΩ 0μA(Typ.)
-25℃ to +105℃ -25℃ to +85℃ -25℃ to +85℃
●Typical Application Circuit
(Typ.) (Typ.) (Max.) 2.90mm x 3.00mm x 0.60mm 2.90mm x 4.00mm x 0.90mm 5.00mm x 6.00mm x 1.00mm
VCC
Cin EN VOUT VOUT ITH RITH VCC,PVCC SW
L VOUT ESR RO
HSON8
GND,PGND
CO
SON008V5060
CITH
MSOP8 Fig.1 Typical Application Circuit
○Product structure:Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays. www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Pin Configurations (Top View)
1 ADJ VCC 8 1 VOUT
(Top View)
VCC 8
2
ITH
PVCC
7
2
ITH
PVCC
7
3
EN
SW
6
3
EN
SW
6
4
GND
PGND
5
4
GND
PGND
5
Fig.2 BD9106FVM, BD9107FVM (Top View)
ADJ 1 8 EN 1 2 VCC 2 7 PVCC 3 4
Fig.3 BD9109FVM (Top View)
ADJ ITH EN GND VCC PVCC SW PGND 8 7 6 5
ITH 3
6 SW
GND 4
5 PGND
Fig.5 BD9120HFN
Fig.4 BD9110NV ●Pin Descriptions 【BD9106FVM, BD9107FVM, BD9109FVM】 Pin No. Pin name 1 ADJ/VOUT 2 ITH 3 EN 4 GND 5 PGND 6 SW 7 PVCC 8 VCC 【BD9110NV】 Pin No. Pin name 1 ADJ 2 VCC 3 ITH 4 GND 5 PGND 6 SW 7 PVCC 8 EN 【BD9120HFN】 Pin No. Pin name 1 ADJ 2 ITH 3 EN 4 GND 5 PGND 6 SW 7 PVCC 8 VCC
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PIN function Output voltage detect pin/ ADJ for BD9106・07FVM GmAmp output pin/Connected phase compensation capacitor Enable pin(Active High) Ground Nch FET source pin Pch/Nch FET drain output pin Pch FET source pin VCC power supply input pin PIN function Output voltage adjust pin VCC power supply input pin GmAmp output pin/Connected phase compensation capacitor Ground Nch FET source pin Pch/Nch FET drain output pin Pch FET source pin Enable pin(Active High) PIN function Output voltage adjust pin GmAmp output pin/Connected phase compensation capacitor Enable pin(Active High) Ground Nch FET source pin Pch/Nch FET drain output pin Pch FET source pin VCC power supply input pin
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Ordering Information
B
D
9
1
x
x
x
x
-
xx
Packaging and forming specification E2: Embossed tape and reel TR: Embossed tape and reel
Part Number
Package NV:SON008V5060 HFN:HSON8 FVM:MSOP8
●Lineup Operating Temperature Range Input voltage range Output voltage range Adjustable (1.0 to 2.5V) Adjustable (1.0 to 1.8V) 3.30±2% Adjustable (1.0 to 1.5V) Adjustable (1.0 to 2.5V) UVLO Output Threshold Current voltage (Max.) (Typ. ) 0.8A 1.2A 0.8A 0.8A 2.0A 3.4V 2.7V 3.8V 2.5V 3.7V Package Orderable Part Number BD9106FVM-TR BD9107FVM-TR BD9109FVM-TR BD9120HFN-TR BD9110NV-E2
MSOP8 MSOP8 MSOP8 HSON8 SON00 8V5060
Reel of 3000 Reel of 3000 Reel of 3000 Reel of 3000 Reel of 2000
4.0V to 5.5V -25℃ to +85℃ 4.5V to 5.5V 2.7V to 4.5V -25℃ to +105℃ 4.5V to 5.5V
●Absolute Maximum Ratings (Ta=25℃) Parameter VCC voltage PVCC voltage EN voltage SW,ITH voltage Power dissipation 1 Power dissipation 2 Operating temperature range Storage temperature range Maximum junction temperature
*1 *2 *3 *4
Symbol VCC PVCC EN SW,ITH Pd1 Pd2 Topr Tstg Tjmax
BD910xFVM *1 -0.3 to +7 *1 -0.3 to +7 -0.3 to +7 -0.3 to +7 *2 387.5 *3 587.4 -25 to +85 -55 to +150 +150
Limits BD9110NV *1 -0.3 to +7 *1 -0.3 to +7 -0.3 to +7 -0.3 to +7 *4 900 *5 3900 -25 to +105 -55 to +150 +150
BD9120HFN *1 -0.3 to +7 *1 -0.3 to +7 -0.3 to +7 -0.3 to +7 *6 1350 *7 1750 -25 to +85 -55 to +150 +150
Unit V V V V mW mW ℃ ℃ ℃
Pd should not be exceeded. Derating in done 3.1mW/℃ for temperatures above Ta=25℃. Derating in done 4.7mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB. Derating in done 7.2mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB which has 1 layer (3%) of copper on the back side). *5 Derating in done 31.2mW/℃ for temperatures above Ta=25℃, Mounted on a board according to JESD51-7. *6 Derating in done 10.8mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB which has 1 layer (7%) of copper on the back side). *7 Derating in done 14mW/℃ for temperatures above Ta=25℃, Mounted on 70mm×70mm×1.6mm Glass Epoxy PCB which has 1 layer (6.5%) of copper on the back side).
●Recommended Operating Ratings (Ta=25℃) Parameter VCC voltage PVCC voltage EN voltage SW average output current
*8 Pd should not be exceeded.
Symbol VCC EN Isw
*8 *8 *8
BD9106FVM Min. 4.0 4.0 0 Max. 5.5 5.5 VCC 0.8
BD9107FVM Min. 4.0 4.0 0 Max. 5.5 5.5 VCC 1.2
BD9109FVM Min. 4.5 4.5 0 Max. 5.5 5.5 VCC 0.8
BD9110NV Min. 4.5 4.5 0 Max. 5.5 5.5 VCC 2.0
BD9120HFN Min. 2.7 2.7 0 Max. 4.5 4.5 VCC 0.8
Unit V V V A
PVCC
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Electrical Characteristics ◎BD9106FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Standby current ISTB 0 10 μA Bias current ICC 250 400 μA EN Low voltage VENL GND 0.8 V EN High voltage VENH 2.0 VCC V EN input current IEN 1 10 μA Oscillation frequency FOSC 0.8 1 1.2 MHz *9 Pch FET ON resistance RONP 0.35 0.60 Ω *9 Nch FET ON resistance RONN 0.25 0.50 Ω ADJ Voltage VADJ 0.780 0.800 0.820 V *9 Output voltage VOUT 1.200 V ITH SInk current ITHSI 10 20 μA ITH Source Current ITHSO 10 20 μA UVLO threshold voltage VUVLOTh 3.2 3.4 3.6 V UVLO hysteresis voltage VUVLOHys 50 100 200 mV Soft start time TSS 1.5 3 6 ms Timer latch time TLATCH 0.5 1 2 ms
*9 Outgoing inspection is not done on all products
Conditions EN=GND Standby mode Active mode VEN=5V PVCC=5V PVCC=5V
ADJ=H ADJ=L VCC=H→L
◎BD9107FVM (Ta=25℃, VCC=5V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Standby current ISTB 0 10 μA Bias current ICC 250 400 μA EN Low voltage VENL GND 0.8 V EN High voltage VENH 2.0 VCC V EN input current IEN 1 10 μA Oscillation frequency FOSC 0.8 1 1.2 MHz *9 Pch FET ON resistance RONP 0.35 0.60 Ω *9 Nch FET ON resistance RONN 0.25 0.50 Ω ADJ Voltage VADJ 0.780 0.800 0.820 V *9 Output voltage VOUT 1.200 V ITH SInk current ITHSI 10 20 μA ITH Source Current ITHSO 10 20 μA UVLO threshold voltage VUVLOTh 2.6 2.7 2.8 V UVLO hysteresis voltage VUVLOHys 150 300 600 mV Soft start time TSS 0.5 1 2 ms Timer latch time TLATCH 0.5 1 2 ms
*9 Outgoing inspection is not done on all products
Conditions EN=GND Standby mode Active mode VEN=5V PVCC=5V PVCC=5V
VOUT =H VOUT =L VCC=H→L
◎BD9109FVM (Ta=25℃, VCC=PVCC=5V, EN= VCC unless otherwise specified.) Parameter Symbol Min. Typ. Max. Standby current ISTB 0 10 Bias current ICC 250 400 EN Low voltage VENL GND 0.8 EN High voltage VENH 2.0 VCC EN input current IEN 1 10 Oscillation frequency FOSC 0.8 1 1.2 *9 Pch FET ON resistance RONP 0.35 0.60 *9 Nch FET ON resistance RONN 0.25 0.50 Output voltage VOUT 3.234 3.300 3.366 ITH SInk current ITHSI 10 20 ITH Source Current ITHSO 10 20 UVLO threshold voltage VUVLO1 3.6 3.8 4.0 UVLO hysteresis voltage VUVLO2 3.65 3.9 4.2 Soft start time TSS 0.5 1 2 Timer latch time TLATCH 1 2 3 Output Short circuit VSCP 2 2.7 Threshold Voltage
*9 Outgoing inspection is not done on all products
Unit μA μA V V μA MHz Ω Ω V μA μA V V ms ms V
Conditions EN=GND Standby mode Active mode VEN=5V PVCC=5V PVCC=5V VOUT =H VOUT =L VCC=H→L VCC=L→H SCP/TSD operated VOUT =H→L
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
◎BD9110NV (Ta=25℃, VCC=PVCC=5V, EN=VCC, R1=10kΩ,R2=5kΩ unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Standby current ISTB 0 10 μA Bias current ICC 250 350 μA EN Low voltage VENL GND 0.8 V EN High voltage VENH 2.0 VCC V EN input current IEN 1 10 μA Oscillation frequency FOSC 0.8 1 1.2 MHz *9 Pch FET ON resistance RONP 200 320 mΩ *9 Nch FET ON resistance RONN 150 270 mΩ ADJ Voltage VADJ 0.780 0.800 0.820 V *9 Output voltage VOUT 1.200 V ITH SInk current ITHSI 10 20 μA ITH Source Current ITHSO 10 20 μA UVLO threshold voltage VUVLOTh 3.5 3.7 3.9 V UVLO hysteresis voltage VUVLOHys 50 100 200 mV Soft start time TSS 2.5 5 10 ms Timer latch time TLATCH 0.5 1 2 ms
*9 Outgoing inspection is not done on all products
Conditions EN=GND Standby mode Active mode VEN=5V PVCC=5V PVCC=5V
VOUT =H VOUT =L VCC=H→L
◎BD9120HFN (Ta=25℃, VCC=PVCC=3.3V, EN=VCC, R1=20kΩ, R2=10kΩ unless otherwise specified.) Parameter Symbol Min. Typ. Max. Unit Conditions Standby current ISTB 0 10 μA EN=GND Bias current ICC 200 400 μA EN Low voltage VENL GND 0.8 V Standby mode EN High voltage VENH 2.0 VCC V Active mode EN input current IEN 1 10 μA VEN=3.3V Oscillation frequency FOSC 0.8 1 1.2 MHz *9 Pch FET ON resistance RONP 0.35 0.60 Ω PVCC=3.3V *9 Nch FET ON resistance RONN 0.25 0.50 Ω PVCC=3.3V ADJ Voltage VADJ 0.780 0.800 0.820 V *9 Output voltage VOUT 1.200 V ITH SInk current ITHSI 10 20 μA VOUT =H ITH Source Current ITHSO 10 20 μA VOUT =L UVLO threshold voltage VUVLO1 2.400 2.500 2.600 V VCC=H→L UVLO hysteresis voltage VUVLO2 2.425 2.550 2.700 V VCC=L→H Soft start time TSS 0.5 1 2 ms Timer latch time TLATCH 1 2 3 ms SCP/TSD operated Output Short circuit VSCP VOUT×0.5 VOUT×0.7 V VOUT =H→L Threshold Voltage
*9 Outgoing inspection is not done on all products
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Block Diagram 【BD9106FVM, BD9107FVM】
Fig.6 BD9106FVM, BD9107FVM Block Diagram
【BD9109FVM】
Fig.7 BD9109FVM Block Diagram
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
【BD9110NV】
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.8 BD9110NV Block Diagram
【BD9120HFN】
Fig.9 BD9120HFN Block Diagram
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Typical Performance Curves 【BD9106FVM】
Fig.10 Vcc-Vout
Fig.11 Ven-Vout
Fig.12 Iout-Vout
Fig.13 Ta-Vout
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.14 Efficiency
Fig.15 Ta-Fosc
Fig.16 Ta-Ronn, Ronp
Fig.17 Ta-Ven
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.18 Ta-Icc
Fig.19 Vcc-Fosc
Fig.20 Soft start waveform
Fig.21 SW waveform Io=10mA
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.22 SW waveform Io=200mA
Fig. 23 Transient response Io=100→600mA(10μs)
Fig.24 Transient response Io=600→100mA(10μs)
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
【BD9107FVM】
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.25 Vcc-Vout
Fig.26 Ven-Vout
Fig.27 Iout-Vout
Fig.28 Ta-Vout
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.29 Efficiency
Fig.30 Ta-Fosc
Fig.31 Ta-RONN, RONP
Fig.32 Ta-VEN
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.33 Ta-ICC
Fig.34 Vcc-Fosc
Fig.35 Soft start waveform
Fig.36 SW waveform Io=10mA
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.37 SW waveform Io=500mA
Fig. 38 Transient response Io=100→600mA(10μs)
Fig.39 Transient response Io=600→100mA(10μs)
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
【BD9109FVM】
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.40 Vcc-Vout
Fig.41 Ven-Vout
Fig.42 Iout-Vout
Fig. 43 Ta-Vout
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.44 Efficiency
Fig.45 Ta-Fosc
Fig.46 Ta-Ronn, Ronp
Fig.47 Ta-Ven
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.48 Ta-Icc
Fig.49 Vcc-Fosc
Fig.50 Soft start waveform
Fig.51 SW waveform Io=10mA
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.52 SW waveform Io=500mA
Fig. 53 Transient response Io=100→600mA(10μs)
Fig.54 Transient response Io=600→100mA(10μs)
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
【BD9110NV】
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.55 Vcc-Vout
Fig.56 Ven-Vout
Fig.57 Iout-Vout
Fig. 58 Ta-Vout
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.59 Efficiency
Fig.60 Ta-Fosc
Fig.61 Ta-Ronn, Ronp
Fig.62 Ta-Ven
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.63 Ta-Icc
Fig.64 Vcc-Fosc
Fig.65 Soft start waveform
Fig.66 SW waveform Io=10mA
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.67 SW waveform Io=500mA
Fig. 68 Transient response Io=100→600mA(10μs)
Fig.69 Transient response Io=600→100mA(10μs)
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
【BD9120HFN】
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.70 Vcc-Vout
Fig.71 Ven-Vout
Fig.72 Iout-Vout
Fig. 73 Ta-Vout
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.74 Efficiency
Fig.75 Ta-Fosc
Fig.76 Ta-Ronn, Ronp
Fig.77 Ta-Ven
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.78 Ta-Icc
Fig.79 Vcc-Fosc
Fig.80 Soft start waveform
Fig.81 SW waveform Io=10mA
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Fig.82 SW waveform Io=200mA
Fig. 83 Transient response Io=100→600mA(10μs)
Fig.84 Transient response Io=600→100mA(10µs)
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Application Information
●Operation BD9106FVM,BD9107FVM,BD9109FVM,BD9110NV,BD9120HFN are a synchronous rectifying step-down switching regulator that achieves faster transient response by employing current mode PWM control system. It utilizes TM switching operation in PWM (Pulse Width Modulation) mode for heavier load, while it utilizes SLLM (Simple Light Load Mode) operation for lighter load to improve efficiency. ○Synchronous rectifier It does not require the power to be dissipated by a rectifier externally connected to a conventional DC/DC converter IC, and its P.N junction shoot-through protection circuit limits the shoot-through current during operation, by which the power dissipation of the set is reduced. ○Current mode PWM control Synthesizes a PWM control signal with a inductor current feedback loop added to the voltage feedback. ・PWM (Pulse Width Modulation) control The oscillation frequency for PWM is 1 MHz. SET signal form OSC turns ON a P -channel MOS FET (while a N-channel MOS FET is turned OFF), and an inductor current I L increases. The current comparator (Current Comp) receives two signals, a current feedback control signal (SENSE: Voltage converted from I L) and a voltage feedback control signal (FB), and issues a RESET signal if both input signals are identical to each other, and turns OFF the P-channel MOS FET (while a N-channel MOS FET is turned ON) for the rest of the fixed period. The PWM control repeat this operation. ・SLLM (Simple Light Load Mode) control When the control mode is shifted from PWM for heavier load to the one for lighter load or vise versa, the switching pulse is designed to turn OFF with the device held operated in normal PWM control loop, which allow s linear operation without voltage drop or deterioration in transient response during the mode switching from light load to heavy load or vise versa. Although the PWM control loop continues to operate with a SET signal from OSC and a RESET signal from Curr ent Comp, it is so designed that the RESET signal is held issued if shifted to the light load mode, with which the switching is tuned OFF and the switching pulses are thinned out under control. Activating the switching intermittently reduces the switching dissipation and improves the efficiency.
SENSE Current Comp RESET Level Shift Gm Amp. ITH OSC FB SET RQ S Driver Logic SW Load IL VOUT
TM
VOUT
Fig.85 Diagram of current mode PWM control
Current Comp SET PVCC SENSE FB GND GND GND IL(AVE) SET Current Comp PVCC SENSE FB GND GND
RESET SW IL
RESET SW
GND IL 0A
VOUT
VOUT(AVE)
VOUT
VOUT(AVE)
Not switching
Fig.86 PWM switching timing chart
Fig.87 SLLM switching timing chart
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Description of Operations ・Soft-start function EN terminal shifted to “High” activates a soft -starter to gradually establish the output voltage with the current limited during startup, by which it is possible to prevent an overshoot of output voltage and an inrush current. ・Shutdown function With EN terminal shifted to “Low”, the device turns to Standby Mode, and all the function blocks inc luding reference voltage circuit, internal oscillator and drivers are turned to OFF. Circuit current during standby is 0 μ A (Typ.). ・UVLO function Detects whether the input voltage sufficient to secure the output voltage of this IC is supplied. And the hy steresis width of 50 to 300 mV (Typ.) is provided to prevent output chattering.
Hysteresis 50 to 300mV
VCC
EN
VOUT
Tss Soft start Standby mode Operating mode Standby mode
Tss
Tss
Operating mode
Standby mode
Operating mode
Standby mode
UVLO *Soft Start time(typ.)
UVLO
EN
UVLO
Fig.88 Soft start, Shutdown, UVLO timing chart BD9106FVM 3 BD9107FVM 1 BD9109FVM 1 BD9110NV 5 BD9120HFN 1 Unit msec
Tss
・Short-current protection circuit with time delay function Turns OFF the output to protect the IC from breakdown when the incorporated current limiter is activated continuously for the fixed time(TLATCH) or more. The output thus held tuned OFF may be recovered by restarting EN or by re-unlocking UVLO.
EN
Output OFF latch VOUT Limit IL 1msec Standby mode Standby mode
Operating mode
Operating mode
*Timer Latch time (typ.)
EN
Timer latch
EN
Fig.89 Short-current protection circuit with time delay timing chart
TLATCH
BD9106FVM 1
BD9107FVM 1
BD9109FVM 2
BD9110NV 1
BD9120HFN 2
Unit msec
※ In addition to current limit circuit, output short detect circuit is built in on BD9109FVM and BD9120HFN. If output voltage f all below 2V(typ, BD9109FVM) or Vout×0.5(typ,BD9120HFN), output voltage will hold turned OFF.
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Information on Advantages Advantage 1:Offers fast transient response with current mode control system. Conventional product (VOUT of which is 3.3 volts) BD9109FVM (Load response IO=100mA→600mA)
VOUT 228mV VOUT
IOUT
IOUT
Voltage drop due to sudden change in load was reduced by about 40%. Fig.90 Comparison of transient response Advantage 2: Offers high efficiency for all load range. ・For lighter load: TM Utilizes the current mode control mode called SLLM for lighter load, which reduces various dissipation such as switching dissipation (PSW ), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and on-resistance dissipation (PRON) that may otherwise cause degradation in efficiency for lighter load.
Achieves efficiency improvement for lighter load.
Efficiency η[%]
100 SLLMTM ② 50 ① PWM
・For heavier load: Utilizes the synchronous rectifying mode and the low on -resistance MOS FETs incorporated as power transistor. ON resistance of P-channel MOS FET: 0.2 to 0.35 Ω (Typ.) ON resistance of N-channel MOS FET: 0.15 to 0.25 Ω (Typ.)
①inprovement by SLLM system ②improvement by synchronous rectifier
0 0.001
0.01 0.1 Output current Io[A]
1
Fig.91 Efficiency
Achieves efficiency improvement for heavier load. Offers high efficiency for all load range with the improvements mentioned above.
Advantage 3:・Supplied in smaller package due to small-sized power MOS FET incorporated. (3 package like MOSP8, HSON8, SON008V5060) ・Allows reduction in size of application products ・Output capacitor Co required for current mode control: 10 μF ceramic capacitor ・Inductance L required for the operating frequency of 1 MHz: 4.7 μH inductor (BD9110NV:Co=22µF, L=2.2µH) Reduces a mounting area required.
VCC 15mm Cin CIN DC/DC Convertor Controller RITH CITH RITH L VOUT Co 10mm CITH CO L
Fig.92 Example application
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Switching Regulator Efficency Efficiency ŋ may be expressed by the equation shown below: ×100[%] Vin×Iin Pin POUT+PDα Efficiency may be improved by reducing the switching regulator power dissipation factors P Dα as follows: Dissipation factors: 2 1) ON resistance dissipation of inductor and FET:PD(I R) 2) Gate charge/discharge dissipation:PD(Gate) 3) Switching dissipation:PD(SW) 4) ESR dissipation of capacitor:PD(ESR) 5) Operating current dissipation of IC:PD(IC) 1)PD(I R)=IOUT ×(RCOIL+RON) (RCOIL[Ω]:DC resistance of inductor, RON[Ω]:ON resistance of FETIOUT[A]:Output current.) 2 2)PD(Gate)=Cgs×f×V (Cgs[F]:Gate capacitance of FET,f[H]:Switching frequency,V[V]:Gate driving voltage of FET) 3)PD(SW)= Vin ×CRSS×IOUT×f IDRIVE
2 2 2 2
η=
VOUT×IOUT
×100[%]=
POUT
×100[%]=
POUT
(CRSS[F]:Reverse transfer capacitance of FET、IDRIVE[A]:Peak current of gate.)
4)PD(ESR)=IRMS ×ESR (IRMS[A]:Ripple current of capacitor,ESR[Ω]:Equivalent series resistance.) 5)PD(IC)=Vin×ICC (ICC[A]:Circuit current.) ●Consideration on Permissible Dissipation and Heat Generation As this IC functions with high efficiency without significant heat generation i n most applications, no special consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including lower input voltage, higher output voltage, heavier load, and/or higher temperature, the permissible d issipation and/or heat generation must be carefully considered. For dissipation, only conduction losses due to DC resistance of inductor and ON resistance of FET are considered. Because the conduction losses are considered to play the leading role among other dissipation mentioned above including gate charge/discharge dissipation and switching dissipation.
1000 Power dissipation:Pd [mW] 1.5 1.5
① f or SON008V5060 ROHM standard 1layer board θj-a=138.9℃/W ② Using an IC alone θj-a=195.3℃/W
Power dissipation:Pd [W] 50 75 85 100 125 150
800 ①587.4mW
Power dissipation:Pd [W]
①mounted on glass epoxy PCB θj-a=212.8℃/W ②Using an IC alone θj-a=322.6℃/W
①1.15W 1.0
① mounted on glass epoxy PCB θj-a=133.0℃/W ② Using an IC alone θj-a=195.3℃/W
①0.90W 1.0
600
400
②387.5mW
②0.63W 0.5
②0.64W 0.5
200
0 0 25 50 75 85 100 125 150 Ambient temperature:Ta [℃]
0 0 25 Ambient temperature:Ta [℃]
0 0 25 50 75 100105 125 150 Ambient temperature:Ta [℃]
Fig.93 Thermal derating curve (MSOP8)
Fig.94 Thermal derating curve (HSON8)
2
Fig.95 Thermal derating curve (SON008V5060)
If VCC=5V, VOUT=3.3V, RCOIL=0.15Ω, RONP=0.35Ω, RONN=0.25Ω IOUT=0.8A, for example, D=VOUT/VCC=3.3/5=0.66 RON=0.66×0.35+(1-0.66)×0.25 =0.231+0.085 =0.316[Ω] P=0.8 ×(0.15+0.316) ≒298[mV]
2
P=IOUT ×(RCOIL+RON) RON=D×RONP+(1-D)×RONN D:ON duty (=VOUT/VCC) RCOIL:DC resistance of coil RONP:ON resistance of P-channel MOS FET RONN:ON resistance of N-channel MOS FET IOUT:Output current
As RONP is greater than RONN in this IC, the dissipation increases as the ON duty becomes greate r. With the consideration on the dissipation as above, thermal design must be carried out with sufficient margin allowed.
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Selection of Components Externally Connected 1. Selection of inductor (L)
IL ΔIL VCC
The inductance significantly depends on output ripple current. As seen in the equation (1), the ripple current decreases as the inductor and/or switching frequency increases. [A]・・・(1) L×VCC×f Appropriate ripple current at output should be 30% more or less of the maximum output current. ΔIL= (VCC-VOUT)×VOUT
IL VOUT L Co
ΔIL=0.3×IOUTmax. [A]・・・(2) (VCC-VOUT)×VOUT L= ΔIL×VCC×f [H]・・・(3)
(ΔIL: Output ripple current, and f: Switching frequency) Fig.96 Output ripple current * Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases efficiency. The inductor must be selected allowing sufficient margin with which the peak current may not exceed its current rating. If VCC=5V, VOUT=3.3V, f=1MHz, ΔIL=0.3×0.8A=0.24A, for example,(BD9109FVM) (5-3.3)×3.3 L= =4.675μ → 4.7[μH] 0.24×5×1M * Select the inductor of low resistance component (such as DCR and ACR) to minimize dissipation in the inductor for better efficiency. 2. Selection of output capacitor (CO)
VCC
Output capacitor should be selected with the consideration on the stability region and the equivalent series resistance required to smooth ripple voltage. Output ripple voltage is determined by the equation (4):
VOUT
ΔVOUT=ΔIL×ESR [V]・・・(4) (ΔIL: Output ripple current, ESR: Equivalent series resistance of output capacitor) *Rating of the capacitor should be determined allowing sufficient margin against output voltage. Less ESR allows reduction in output ripple voltage.
L
ESR Co
Fig.97 Output capacitor As the output rise time must be designed to fall within the soft -start time, the capacitance of output capacitor should be determined with consideration on the requirements of equation (5): Tss: Soft-start time TSS×(Ilimit-IOUT) Co≦ ・・・(5) Ilimit: Over current detection level, 2A(Typ) VOUT In case of BD9109FVM, for instance, and if VOUT=3.3V, IOUT=0.8A, and TSS=1ms, 1m×(2-0.8) Co≦ ≒364 [μF] 3.3 Inappropriate capacitance may cause problem in startup. A 10 μF to 100 μF ceramic capacitor is recommended. 3. Selection of input capacitor (Cin) Input capacitor to select must be a low ESR capacitor of the capacitance sufficient to cope with high ripple current to prevent high transient voltage. The VCC Cin ripple current IRMS is given by the equation (6): √ OUT(VCC-VOUT) V IRMS=IOUT× [A]・・・(6) VOUT VCC L Co < Worst case > IRMS(max.) IOUT When VCC is twice the Vout, 2 IRMS= If VCC=5V, VOUT=3.3V, and IOUTmax.=0.8A, (BD9109FVM) Fig.98 Input capacitor √ .3(5-3.3) 3 IRMS=0.8× =0.38[ARMS] 5 A low ESR 10μF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better efficiency.
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
4. Determination of RITH, CITH that works as a phase compensator As the Current Mode Control is designed to limit a inductor current, a pole (phase lag) appears in the low frequency area due to a CR filter consisting of a output capacitor and a load resistance, while a zero (phase lead) appears in the high frequency area due to the output capacitor and its ESR. So, the phases are easily compensated by adding a zero to the power amplifier output with C and R as described below to cancel a pole at the power amplifier.
fp(Min.) A Gain [dB] fp(Max.) 0 fz(ESR) IOUTMin. 0 Phase [deg] -90 IOUTMax.
1 2π×RO×CO 1 fz(ESR)= 2π×ESR×CO fp= Pole at power amplifier When the output current decreases, the load resistance Ro increases and the pole frequency lowers. fp(Min.)= 1 2π×ROMax.×CO 1 2π×ROMin.×CO [Hz]←with lighter load [Hz]←with heavier load
Fig.99 Open loop gain characteristics
A fz(Amp.) Gain [dB] 0 0 Phase [deg] -90
fp(Max.)=
Zero at power amplifier Increasing capacitance of the output capacitor lowers the pole frequency while the zero frequency does not change. (This is because when the capacitance is doubled, the capacitor ESR reduces to half.) fz(Amp.)= 1 2π×RITH.×CITH
Fig.100 Error amp phase compensation characteristics
Cin EN VOUT VOUT ITH RITH CITH GND,PGND L SW ESR CO RO VOUT
VCC
VCC,PVCC
Fig.101 Typical application Stable feedback loop may be achieved by canceling the pole fp (Min.) produced by the output capacitor and the load resistance with CR zero correction by the error amplifier. fz(Amp.)= fp(Min.) 1 2π×RITH×CITH = 1 2π×ROMax.×CO
5. Determination of output voltage The output voltage VOUT is determined by the equation (7): VOUT=(R2/R1+1)×VADJ・・・(7) VADJ: Voltage at ADJ terminal (0.8V Typ.) With R1 and R2 adjusted, the output voltage may be determined as required. Adjustable output voltage range: 1.0V to 1.5V/ BD9107FVM, BD9120HFN 1.0V to 2.5V/BD106FVM, BD9110NV Use 1 kΩ to 100 kΩ resistor for R1. If a resistor of the resistance higher than 100 kΩ is used, check the assembled set carefully for ripple voltage etc.
L Output SW Co R2
ADJ
R1
Fig.102 Determination of output voltage
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Cautions on PC Board layout BD9106FVM, BD9107FVM, BD9109FVM, BD9120HFN
1 2 RITH EN CITH 4 ③ 3
VOUT/ADJ ITH EN GND
VCC PVCC SW PGND
8 7 CIN 6 CO 5 ② GND L VCC ① VOUT
Fig.103 Layout diagram
BD9110NV
Cautions on PC Board layout VCC R2 1 R1 2 3 RITH ③ CITH 4 GND PGND ADJ VCC ITH EN 8 7 6 5 CIN ② L Co ① VOUT EN
PVCC SW
GND Fig.104 Layout diagram ① For the sections drawn with heavy line, use thick conductor pattern as short as possible. ② Lay out the input ceramic capacitor CIN closer to the pins PVCC and PGND, and the output capacitor Co closer to the pin PGND. ③ Lay out CITH and RITH between the pins ITH and GND as neat as possible with least necessary wiring.
※ The package of HSON8 (BD9120HFN) and SON008V5050 (BD9110NV) has thermal FIN on the reverse of the package. The package thermal performance may be enhanced by bonding the FIN to GND plane which take a large area of PCB.
●Recommended components Lists on above application Table1. [BD9106FVM] Symbol Part Value L CIN CO CITH Coil Ceramic capacitor Ceramic capacitor Ceramic capacitor 4.7μH 10μF 10μF 750pF VOUT=1.0V VOUT=1.2V RITH Resistance VOUT=1.5V VOUT=1.8V VOUT=2.5V 18kΩ 22kΩ 22kΩ 27kΩ 36kΩ
Manufacturer Sumida TDK Kyocera Kyocera murata ROHM ROHM ROHM ROHM ROHM
Series CMD6D11B VLF5014AT-4R7M1R1 CM316X5R106K10A CM316X5R106K10A GRM18series MCR10 1802 MCR10 2202 MCR10 2202 MCR10 2702 MCR10 3602
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
Value 4.7μH 10μF 10μF
BD9110NV
BD9120HFN
Series CMD6D11B
Datasheet
Table2. [BD9107FVM] Symbol Part L CIN CO CITH Coil Ceramic capacitor Ceramic capacitor Ceramic capacitor
Manufacturer Sumida TDK Kyocera Kyocera murata 4.3kΩ 6.8kΩ 9.1kΩ 12kΩ ROHM ROHM ROHM ROHM
VLF5014AT-4R7M1R1 CM316X5R106K10A CM316X5R106K10A GRM18series MCR10 4301 MCR10 6801 MCR10 9101 MCR10 1202
1000pF VOUT=1.0V VOUT=1.2V VOUT=1.5V VOUT=1.8V
RITH
Resistance
Table3. [BD9109VM] Symbol L CIN CO CITH RITH Coil
Part
Value 4.7μH 10μF 10μF 330pF 30kΩ
Manufacturer Sumida TDK Kyocera Kyocera murata ROHM
Series CMD6D11B VLF5014AT-4R7M1R1 CM316X5R106K10A CM316X5R106K10A GRM18series MCR10 3002
Ceramic capacitor Ceramic capacitor Ceramic capacitor Resistance
Table4. [BD9110NV] Symbol L CIN CO CITH
Part Coil
Value 2.2μH 10μF 22μF 1000pF VOUT=1.0V VOUT=1.2V
Manufacturer TDK Kyocera Kyocera murata
Series LTF5022T-2R2N3R2 CM316X5R106K10A CM316B226K06A GRM18series
Ceramic capacitor Ceramic capacitor Ceramic capacitor
RITH
Resistance
VOUT=1.5V VOUT=1.8V VOUT=2.5V
12kΩ
ROHM
MCR10 1202
Table5. [BD9120HFN] Symbol Part L CIN CO CITH RITH Coil Ceramic capacitor Ceramic capacitor Ceramic capacitor Resistance
Value 4.7μH 10μF 10μF 680pF VOUT=1.0V VOUT=1.2V VOUT=1.5V 8.2kΩ 8.2kΩ 4.7kΩ
Manufacturer Sumida TDK Kyocera Kyocera murata ROHM ROHM ROHM
Series CMD6D11B VLF5014AT-4R7M1R1 CM316X5R106K10A CM316X5R106K10A GRM18series MCR10 8201 MCR10 8201 MCR10 4701
*The parts list presented above is an example of recommended parts. Although the parts are sound, actual circuit characterist ics should be checked on your application carefully before use. Be sure to allow sufficient margins to accommodate variations between external devices and this IC wh en employing the depicted circuit with other circuit constants modified. Both static and transient characteristics should be consid ered in establishing these margins. When switching noise is substantial and may impact the system, a low pass filter should be inserted between the VCC and PVCC pins, and a schottky barrier diode established between the SW and PGND pins.
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●I/O Equivalence Circuit 【BD9106FVM, BD9107FVM, BD9109FVM】
・EN pin
VCC
・SW pin
PVCC
PVCC
PVCC
10kΩ EN
SW
・ADJ pin (BD9106FVM, BD9107FVM)
VCC
・VOUT pin (BD9109FVM)
VCC
10kΩ ADJ
10kΩ VOUT
・ITH pin
VCC VCC
ITH
【BD9110NV, BD9120HFN】
・EN pin ・SW pin
PVCC PVCC PVCC
EN
10kΩ SW
・ITH pin (BD9110NV)
・ITH pin (BD9120HFN)
VCC VCC
ITH
ITH
10kΩ ADJ
Fig.105 I/O equivalence circuit
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Operational Notes 1. Absolute Maximum Ratings While utmost care is taken to quality control of this product, any application that may exceed some of the absolute maximum ratings including the voltage applied and the operating temperature range may result in breakage. If broken, short-mode or open-mode may not be identified. So if it is expected to encounter with special mode that may exceed the absolute maximum ratings, it is requested to take necessary safety measures physically including insertion of fuses. 2. Electrical potential at GND GND must be designed to have the lowest electrical potential In any operating conditions. 3. Short-circuiting between terminals, and mismounting When mounting to pc board, care must be taken to avoid mistake in its orientation and alignment. Failure to do so may result in IC breakdown. Short-circuiting due to foreign matters entered between output terminals, or between output and power supply or GND may also cause breakdown. 4.Operation in Strong electromagnetic field} Be noted that using the IC in the strong electromagnetic radia tion can cause operation failures. 5. Thermal shutdown protection circuit Thermal shutdown protection circuit is the circuit designed to isolate the IC from thermal runaway, and not intended to protect and guarantee the IC. So, the IC the thermal shutdown protection circuit of which is once activated should not be used thereafter for any operation originally intended. 6. Inspection with the IC set to a pc board If a capacitor must be connected to the pin of lower impedance during inspection with the IC s et to a pc board, the capacitor must be discharged after each process to avoid stress to the IC. For electrostatic protection, provide proper grounding to assembling processes with special care taken in handling and storage. When connecting to jigs in th e inspection process, be sure to turn OFF the power supply before it is connected and removed. 7. Input to IC terminals + This is a monolithic IC with P isolation between P-substrate and each element as illustrated below. This P -layer and the N-layer of each element form a P-N junction, and various parasitic element are formed. If a resistor is joined to a transistor terminal as shown in Fig 106: ○P-N junction works as a parasitic diode if the following relationship is satisfied; GND>Terminal A (at resisto r side), or GND>Terminal B (at transistor side); and ○if GND>Terminal B (at NPN transistor side), a parasitic NPN transistor is activated by N-layer of other element adjacent to the above-mentioned parasitic diode. The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits, and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in activation of parasitic elements.
Fig.106 Simplified structure of monorisic IC
8. Ground wiring pattern If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuat ions in voltages of the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well. Status of this document The Japanese version of this document is formal specification. A customer may use this translatio n version only for a reference to help reading the formal version. If there are any differences in translation version of this document formal version takes priority.
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Physical Dimensions Tape and Reel information
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
BD9107FVM
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
●Marking Diagrams
BD9106FVM MSOP8(TOP VIEW) Part Number Marking
BD9107FVM MSOP8(TOP VIEW) Part Number Marking
D91 0 6
LOT Number
D91 0 7
LOT Number
1PIN MARK
1PIN MARK
BD9109FVM MSOP8(TOP VIEW) Part Number Marking
BD9110NV SON008V5060 (TOP VIEW) Part Number Marking
D91 0 9
LOT Number
B D 9 11 0
LOT Number
1PIN MARK 1PIN MARK
BD9120HFN HSON8 (TOP VIEW) Part Number Marking
D91 20
LOT Number
1PIN MARK
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
BD9106FVM
●Revision History Date 17.Jan.2012
BD9107FVM
Revision 001
BD9109FVM
BD9110NV
BD9120HFN
Datasheet
Changes New Release
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TSZ02201-0J3J0AJ00090-1-2 02.MAR.2012 Rev.001
Datasheet Datasheet
Notice
●Precaution for circuit design 1) The products are designed and produced for application in ordinary electronic equipment (AV equipment, OA equipment, telecommunication equipment, home appliances, amusement equipment, etc.). If the products are to be used in devices requiring extremely high reliability (medical equipment, transport equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or operational error may endanger human life and sufficient fail-safe measures, please consult with the ROHM sales staff in advance. If product malfunctions may result in serious damage, including that to human life, sufficient fail-safe measures must be taken, including the following: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits in the case of single-circuit failure 2) The products are designed for use in a standard environment and not in any special environments. Application of the products in a special environment can deteriorate product performance. Accordingly, verification and confirmation of product performance, prior to use, is recommended if used under the following conditions: [a] Use in various types of liquid, including water, oils, chemicals, and organic solvents [b] Use outdoors where the products are exposed to direct sunlight, or in dusty places [c] Use in places where the products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use in places where the products are exposed to static electricity or electromagnetic waves [e] Use in proximity to heat-producing components, plastic cords, or other flammable items [f] Use involving sealing or coating the products with resin or other coating materials [g] Use involving unclean solder or use of water or water-soluble cleaning agents for cleaning after soldering [h] Use of the products in places subject to dew condensation The products are not radiation resistant. Verification and confirmation of performance characteristics of products, after on-board mounting, is advised. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse) is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual ambient temperature. Confirm that operation temperature is within the specified range described in product specification. Failure induced under deviant condition from what defined in the product specification cannot be guaranteed.
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●Precaution for Mounting / Circuit board design 1) When a highly active halogenous (chlorine, bromine, etc.) flux is used, the remainder of flux may negatively affect product performance and reliability. 2) In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the Company in advance.
Regarding Precaution for Mounting / Circuit board design, please specially refer to ROHM Mounting specification ●Precautions Regarding Application Examples and External Circuits 1) If change is made to the constant of an external circuit, allow a sufficient margin due to variations of the characteristics of the products and external components, including transient characteristics, as well as static characteristics. 2) The application examples, their constants, and other types of information contained herein are applicable only when the products are used in accordance with standard methods. Therefore, if mass production is intended, sufficient consideration to external conditions must be made.
Notice - Rev.001
Datasheet Datasheet
●Precaution for Electrostatic This product is Electrostatic sensitive product, which may be damaged due to Electrostatic discharge. Please take proper caution during manufacturing and storing so that voltage exceeding Product maximum rating won't be applied to products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). ●Precaution for Storage / Transportation 1) Product performance and soldered connections may deteriorate if the products are stored in the following places: [a] Where the products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] Where the temperature or humidity exceeds those recommended by the Company [c] Storage in direct sunshine or condensation [d] Storage in high Electrostatic 2) Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using products of which storage time is exceeding recommended storage time period . Store / transport cartons in the correct direction, which is indicated on a carton as a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. Use products within the specified time after opening a dry bag.
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●Precaution for product label QR code printed on ROHM product label is only for internal use, and please do not use at customer site. It might contain a internal part number that is inconsistent with an product part number. ●Precaution for disposition When disposing products please dispose them properly with a industry waste company. ●Precaution for Foreign exchange and Foreign trade act Since concerned goods might be fallen under controlled goods prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. ●Prohibitions Regarding Industrial Property 1) Information and data on products, including application examples, contained in these specifications are simply for reference; the Company does not guarantee any industrial property rights, intellectual property rights, or any other rights of a third party regarding this information or data. Accordingly, the Company does not bear any responsibility for: [a] infringement of the intellectual property rights of a third party [b] any problems incurred by the use of the products listed herein. 2) The Company prohibits the purchaser of its products to exercise or use the intellectual property rights, industrial property rights, or any other rights that either belong to or are controlled by the Company, other than the right to use, sell, or dispose of the products.
Notice - Rev.001