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BD9241F

BD9241F

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    BD9241F - Silicon Monolithic Integrated Circuit - Rohm

  • 数据手册
  • 价格&库存
BD9241F 数据手册
1/4 STRUCTURE PRODUCT NAME TYPE FUNCTION Silicon Monolithic Integrated Circuit IC for DC-AC inverter control BD9241F 1.For 36Vhigh voltage process/1ch Full Bridge control 2.Current, voltage feedback control 3.Built-in soft start circuit 4.Built-in timer-latch circuit 5.Built-in the malfunction preventing circuit (UVLO) when lower voltage 6.Shifting to current consumption save mode from STB terminal 7.External PWM,DC voltage control and current linear control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Parameter Symbol Power Supply Voltage VCC Operating Temperature Range Topr Storage Temperature Range Tstg allowable loss Pd Junction Temperature Tjmax Rating 36 -40~+85 -55~+150 687* +150 Unit V ℃ ℃ mW ℃ *Reduced by 5.5mW/℃ when Ta=25℃ or over (when 70.0mm×70.0mm×1.6mm board is mounting) OPERATING Range Parameter Power Supply Voltage Terminal Voltage (SRT,RT,VS,IS,COMP,DUT Y) Drive output frequency BCT oscillation frequency . Symbol VCC fOUT fBCT Range 9~30 -0.3~5.5 30~90 0.10~0.50 Unit V V kHz kHz REV. A 2/4 ○ELECTRICAL CHARACTERISTICS(Ta=25℃,VCC=15V) Rating Symbol Parameter MIN Standard ( devices whole) ( ) Circuit Current at operating Circuit Current when standby MAX 5.0 10 VCC 0.8 Unit Condition ICC1 ICC2 VstH VstL - - 2.0 -0.3 2.3 0 - - mA μA V V System ON System OFF DUTY Terminal 0.5V→2.0V Burst dimming 100%→0% DUTY Terminal 0.5V→2.0V Burst dimming 0%→100% ( Standby control, SEL control) ( Standby Terminal voltageH Standby Terminal voltageL : : : : SEL Terminal voltage H VSELH 2.4 - VCC V SEL Terminal voltage L ( TimerーLatch) ( ) Voltage setting time Current setting time ( (OSC Block) ) Active edge setting current MAX DUTY Soft start time SRT Terminal ON Resistant ( (UVLOBLOCK) ) Voltage starting operation Hysteresis width ( Feedback system) ( ) IS Threshold voltage VS Threshold voltage IS Source current1 IS Source current 2 VS Source current ISCOMP Detecting voltage ( Output block) ( ) P1,P2 Output voltage H P1,P2 Output voltageL N1,N2 Output voltageH N1,N2 Output voltageL P1,P2 Output sink resistance P1,P2 Output source resistance VSELL -0.3 - 0.8 V VCP ICP Iact MAXDUTY TSS RSRT VuvloH ΔVuvloH VIS VVS IIS1 IIS2 IVS VISC VOUTPH VOUTPL VOUTNH VOUTNL RsinkP1,2 R source P1,2 RsinkN1,2 RsourceN1,2 FOUT VburH VburL FBOSC VCOMPH VCOMP 1.9 0.85 1.25/RT 44 50 - 6 0.15 1.225 1.210 - 40 - 0.45 VCC-0.3 VCC-10.3 8.3 - - - - - 48.5 1.9 0.4 337 1.9 0.1 2.0 1.0 1.5/RT 46.4 100 100 7 0.3 1.250 1.250 - 50 - 0.50 VCC VCC-9.3 9.3 0 3 6 4 6 50 2.0 0.5 350 2.00 0.2 2.1 1.15 1.75/RT 49 150 200 8 0.6 1.275 1.290 0.9 60 1.0 0.55 - VCC-8.3 10.3 0.3 10 12 10 12 51.5 2.1 0.6 363 2.1 0.4 V μA A % msec Ω V V V V μA μA μA V V V V V Ω Ω Ω Ω kHz V V Hz V V RT=100kΩ DUTY=2.0V DUTY=0V、IS=0.5V N1,N2 Output sink resistance N1,N2 Output source resistance Drive output frequency ( Burst mode setting block) ( ) Triangular wave upper voltage Triangular wave lower voltage Isink=10mA Isource=10mA Isink=10mA Isource=10mA RT=100kΩ Triangular wave frequency ( COMP Block) ( ) Over-voltage detecting voltage Hysteresis width BCT=4700pF (It is not the radiation-proof design for this product.) REV. A 3/4 ○Dimensional outline drawing Item No (The max dimension with burr:11.55) BD9241 1 Lot No. SOP18 (Unit:mm) ○ Block diagram ○Terminal description Terminal No 1 Terminal name N2 P2 VCC SEL CP GND SRT RT VS IS FB COMP BCT DUTY STB PGND P1 N1 Function External FET drive circuit output terminal External FET drive circuit output terminal Power terminal Dimming(POS,NEG)select terminal Timer ー latch setting capacity connection terminal GROUND Connecting terminal for charging discharging current setting resistance of block Connecting terminal for charging discharging current setting resistance of block Error amplifier input terminal② Error amplifier input terminal① Error amplifier output terminal Over-voltage detecting terminal Connecting terminal for charging and discharging current setting capacity of BOSC block. Switching terminal of PWM mode and burst mode Standby switch terminal External FET drive circuit GND terminal External FET drive circuit output terminal External FET drive circuit output terminal and OSC and OSC STB block 2 PWM block Logic block 3 Out put block 4 5 6 F/B block Output block 7 8 Reg block Internal REG(5V) Protection block 9 10 11 12 13 14 15 16 17 18 REV. A 4/4 〇Usage notes 1. About the absolute maximum ratings The damage may occur If absolute maximum rating such as applied voltage and operating temperature range etc. is exceeded, moreover such destructive conditions as short mode or open mode etc. can not be assumed, so If a particular mode such as exceeding the absolute maximum rating is assumed, please consider taking physical safety measures such as fuse etc. 2. As long as being operation range, the operation of circuit function will be assured in the range of operating ambient temperature. About characteristic value, the specification value of electric characteristic can’t be guaranteed, but the characteristic value doesn’t change rapidly in these ranges. 3. When attaching to the printed substrate, pay special attention to the direction and proper placement of the IC. outputs or an output and the power GND. 4. Please be careful that there is a possibility of malfunction which is happening when you use it in a strong electromagnetic field. 5. The potential of GND terminal and PGND terminal is used with not over ±0.3V please. 6. This IC has a built-in Temperature Protection Circuit (TSD circuit). The temperature protection circuit (TSD circuit) is only to cut off the IC from thermal runaway, and has not been designed to protect or compensate the IC. continued operation in mind. 7. Although the quality of this product has been tightly controlled ,the damage may occur If absolute maximum rating such as applied voltage and operating temperature range etc. is exceeded, moreover such destructive conditions as short mode or open mode etc. can not be assumed, so If a particular mode such as exceeding the absolute maximum rating is assumed, please consider taking a measures such as fuse etc. 8. Regarding the external FET, since gate voltage will be changed regarding parasitic capacity between drain gates while switching the drain voltage, please think over dispersion etc of our company’s IC, please select FET with sufficient margin. 9. CP timer does not operate during the time of soft start. 10.To prevent the destruction from external static electricity, please give resistance to the pin which directly link with connector etc. 11.This IC is a monolithic IC, and between each element there is a P+ isolation and P substrate for element separation. There is a P-N junction and other parasitic elements formed between this P-layer and each element’s N-layer, as shown in Fig. when the resistors and transistors are connected to the terminal, ○ ○ When GND>(terminal A) at the resistance, or GND>(terminal B) at the transistor (NPN), the P-N junction operates as a parasitic diode. Also, when GND>(terminal B) at the transistor, a parasitic NPN transistor operates by the N-layer of other elements which close to the aforementioned parasitic diode. With the IC’s configuration, the production of parasitic elements by the relationships of the electrical potentials is inevitable. The operation of the parasitic elements can also interfere with the circuit operation, leading to malfunction and even destruction. Therefore, uses which cause the parasitic elements to operate, such as applying voltage to the input terminal which is lower than the GND (P-substrate), should be avoided. Resistance (Terminal A) If the IC is attached incorrectly, it may be destroyed. Destruction can also occur when there is a short, which can be caused by foreign objects entering between Therefore, the user should not plan to activate this circuit with 抵抗 トランジスタ(NPN) Transistor (NPN) B (端子A) 端子B (Terminal B ) C E GND P P + P+ N N P P基板 GND Parasitic Element P+ N N P + N N P Substrate N P Substrate P基板 GND 寄生素子 Parasitic Element 寄生素子 Terminal B (端子B) (Terminal A) (端子A) 寄生素子 Parasitic Element BC E GND 近接するほかの素子 other elements close to 寄生素子 Parasitic Element GND Fig.1 Simple Structure of Monolithic IC 図-1 モノリシックICの簡易構造 REV. A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A
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