BD9244AFV

1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT DC-AC Inverter Control IC TYPE FUNCTION ＢＤ９２４４ＡＦＶ ・ ・ ・ ・ ・ ・ ・ ・ 36V High voltage process 1ch control with Full-Bridge Lamp current and voltage sense feed back control Sequencing easily achieved with Soft Start Control Short circuit protection with Timer Latch Under Voltage Lock Out and Over Voltage Protection Mode-selectable the operating or stand-by mode by stand-by pin BURST mode controlled by PWM and DC input ○Absolute Maximum Ratings（Ｔａ＝２５℃） Parameter Supply Voltage BST PIN SW PIN BST-SW voltage difference Operating Temperature Range Storage Temperature Range Maximum Junction Temperature Power Dissipation * Symbol VCC BST SW BST-SW Topr Tstg Tjmax Pd Limits 36 40 36 15 -40～+85 -55～+150 +150 1024* Unit V V V V ℃ ℃ ℃ mW Pd derate at 5.6mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm) 〇Operating condition Parameter Supply voltage BST voltage BST-SW voltage difference oscillation frequency BCT oscillation frequency Symbol VCC BST BST-SW FOUT fBCT Limits 9.0～30.0 5.0～37.5 5.0～14.0 30～110 0.05～1.00 Unit V V V kHz kHz REV. A 2/4 ○Electric Characteristics（Ta=25℃、VCC=24V、STB=3.0V） Parameter （ （WHOLE DEVICE） ） Operating current Stand-by current （ （STAND BY CONTROL） ） Stand-by voltage H Stand-by voltage L （ （VCC UVLO BLOCK） ） Operating voltage (VCC) Hesteresis width (VCC UVLO) Operating voltage (UVLO) Hesteresis width(UVLO) Operating voltage (OVP) Hesteresis width(OVP) （ （REG BLOCK） ） REG output voltage REG source current （ （OSC BLOCK） RT Output Voltage SRT ON Resistor value （ （SOFT START BLOCK） ） Soft start time （ （BOSC BLOCK） ） BOSC Max voltage BOSC Min voltage BOSC frequency （ （FEED BACK BLOCK） ） IS threshold voltage VS threshold voltage IS source current 1 IS source current 2 VS source current IS COMP detect voltage （ （OUTPUT BLOCK） ） LN output sink resistance LN output source resistance HN output sink resistance HN output source resistance MAX DUTY OFF period Drive output frequency （ （TIMER LATCH BLOCK） VCP ICP RFAIL VIS1 VVS IIS1 IIS2 IVS VBCTH VBCTL FBCT TSS VRT RSRT VREG IREG VstH VstL Icc1 Icc2 Symbol MIN. Limits TYP. MAX. Unit Conditions － － 2.2 0 5.0 10 mA μA FOUT=60kHz, FB=SW=GND, BST=OPEN 2.0 -0.3 － － VCC 1.0 V V System ＯＮ System ＯＦＦ V_VCCUVP ⊿V_VCCUVP V_UVP ⊿V_UVP V_OVP ⊿V_OVP 6.17 0.37 1.80 0.15 3.10 0.15 6.50 0.50 1.85 0.20 3.20 0.20 6.83 0.63 1.90 0.25 3.30 0.25 V V V V V V 7.35 20 7.50 － 7.65 － V mA VCC>8.5V 1.05 － 1.50 100 1.95 200 V Ω 2.5 5.0 10.0 ms FOUT=60kHz 2.16 0.6 291 2.25 0.7 300 2.34 0.8 309 V V Hz fBCT=0.3kHz fBCT=0.3kHz BCT=10000pF 1.225 1.215 － 40 － 0.606 1.250 1.250 － 50 － 0.625 1.275 1.285 0.9 60 0.9 0.644 V V μA μA μA V DUTY=2.45V DUTY=0V IS=1.0V VISCOMP RsinkLN RsourceLN RsinkHN RsourceHN MAX DUTY TOFF FOUT 1.5 5 1.5 5 46.0 100 57.9 3 10 3 10 48.5 200 60 6 20 6 20 49.5 400 62.1 Ω Ω Ω Ω % ns kHz RT=100kΩ VBST-VSW=7.0V VBST-VSW=7.0V FOUT=60kHz CP timer latch detect voltage CP timer latch charge current FAIL ON Resistor value （ （COMP BLOCK） ） COMP over voltage detect voltage Hysteresis width （COMP） 1.9 0.85 － 2.0 1.0 125 2.1 1.15 250 V μA Ω VCOMP ⊿VCOMP 3.88 0.15 4.0 0.20 4.12 0.25 V V (This product is not designed to be radiation-resistant.) REV. A 3/4 〇Package Dimensions 〇Block Diagram VCC REG RT BCT DUTY DEVICE MARK REG BLOCK OSC BLOCK BOSC BLOCK DUTY BLOCK STB STB BLOCK SYSTEM　ON/OFF CT REG BD9244AFV BST1 FB HN1 IS VS SW1 F/B BLOCK CT PWM BLOCK LOGIC BLOCK OUTPUT BLOCK LN1 BST2 SS BLOCK CT_COUNTER PROTECT BLOCK HN2 SW2 LN2 Lot No. GND CT PGND VCC VLO ブロック COMP CP SRT VLO FAIL SSOP-B24 (UNIT:mm) ○Pin Description PIN PIN NAME No. FUNCTION No. PIN PIN NAME FUNCTION 1 PGND Power Ground for FET drivers 13 FAIL Error Indication signal output ( Normal : L, Error : OPEN) 2 LN2 NMOS FET driver (Ch. 2) 14 CP External capacitor between CP and GND for timer latch 3 BST2 Boot-strap input for HN2 output NMOS FET driver (Ch. 2) 15 FB Error amplifier output 4 HN2 16 IS Error amplifier input 2 5 SW2 Lower rail voltage for HN2 output 17 VS Error amplifier input 1 6 VCC Power supply input with UVLO Protection 18 COMP Input of over voltage detector 7 STB Stand-by switch External resister from SRT to RT for adjusting the start-up 19 VLO External Under Voltage Lock Out and Over Voltage Protection 8 SRT Triangle oscilator External resistor between RT and GND for adjustment 20 SW1 Lower rail voltage for HN1 output 9 RT frequency of saw tooth wave 21 HN1 NMOS FET driver (Ch. 1) 10 GND Ground External capacitor between BCT and GND for adjusting 22 BST1 Boot-strap input for HN1 output 11 BCT the BURST triangle oscillator 23 REG regulator output 12 DUTY Control Burst-dimming by PWM signal or DC 24 LN1 NMOS FET driver (Ch. 1) REV. A 4/4 〇NOTE FOR USE １. When designing the external circuit, including adequate margins for variation between external devices and IC. Use adequate margins for steady state and transient characteristics. ２. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended operating range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges, however the variation will be small. ３. Mounting failures, such as misdirection or miscounts, may harm the device. ４. A strong electromagnetic field may cause the IC to malfunction. ５. The GND pin should be the location within ±0.3V compared with the PGND pin. ６. If the voltage between VCC and I/O pins or GND and I/O pins is in opposite from the normal potential difference, unusual current flow into pins may occur which can destroy the IC. To avoid such occurrence it is recommended to place protection diodes for prevention against backward current flow. ７. BD9244AFV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation of the thermal shutdown circuit is assumed. ８. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened. Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need to be considered when using a device beyond its maximum ratings. ９. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching. Make sure to leave adequate margin for this IC variation. １０. By STB voltage, BD9244AFV are changed to 2 states. Therefore, do not input STB pin voltage between one state and the other state (1.0～2.0V). １１. The pin connected a connector need to connect to the resistor for electrical surge destruction. １２．This IC is a monolithic IC which (as shown is Fig.4)has P+ substrate and between the various pins. A P-N junction is formed from this P layer of each pin. For example, the relation between each potential is as follows, ○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.) ○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.) Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin Resistance (PinA) (PinB) Transistor (NPN) Ｃ Ｂ Ｅ ＧＮＤ Ｐ Ｐ Ｎ ＧＮＤ Ｐ Ｎ Ｎ Ｐ P substrate Ｐ Ｎ Ｎ Ｐ Ｎ Ｎ P substrate Parasitic diode (PinB) ＧＮＤ Parasitic diode (PinA) Parasitic Ｂ Ｃ Ｅ ＧＮＤ Parasitic diode ＧＮＤ Other adjacent components Fig.4. Simplified structure of a Bipolar IC REV. A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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