BD9270F

1/4 STRUCTURE Silicon Monolithic Integrated Circuit NAME OF PRODUCT TYPE FUNCTION DC-AC Inverter Control IC ＢＤ９２７０Ｆ ・ 1ch control with Full-Bridge (For USE FET Body-Di) ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Lamp current and voltage sense feed back control Sequencing easily achieved with Soft Start Control Striking time can Control independently (STRK pin) Circuit protection with Timer Latch (COMP) Circuit protection with quick Shutdown (COMPSD) Mode-selectable the operating or stand-by mode by stand-by pin Synchronous operating the other BD9270F ICs BURST mode controlled by PWM input Output liner Control by external DC voltage Built-in Error mode output pin (FAIL pin) ○ Absolute Maximum Ratings（Ta = 25℃） Parameter Supply Voltage OUTPUT DRIVER Operating Temperature Range Storage Temperature Range Maximum Junction Temperature Power Dissipation * Symbol VCC LNx, HFNx, Topr Tstg Tjmax Pd Limits 20 20 -40～+85 -55～+150 +150 688 * Unit V V ℃ ℃ ℃ mW Pd derate at 5.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm) ○Operating condition Parameter Supply voltage DRIVER frequency Symbol VCC FOUT Limits 8.5～19.0 30～110 Unit V kHz REV. B 2/4 ○Electric Characteristics（Ta=25℃、VCC=12V、STB=3.0V） Parameter Symbol MIN. Limits TYP. MAX. Unit Conditions FOUT=60kHz, FB=GND, DUTY=0V ((WHOEL DEVICE)) Operating current Stand-by current ((STAND BY CONTROL)) Icc1 Icc2 VstH VstL VREG IREG Vvccuvlo ⊿Vvccuvlo FOUT VRT RSRT ISS VSS_ST VSS_ED ISTRK VSTRK_ED VIS1 VIS2 VVS IIS1 IIS2 IVS VISCOMP1 VISCOMP2 VREFIN DUTY-th RsinkLN RsourceLN RsinkHFN RsourceHFN MAX DUTY VCP ICP VCOMPH ⊿VCOMPH VCOMPSDH ⊿VCOMPSDH RFAIL VCT_SYNCH VCT_SYNCL RSYNC_OUT_sink RSYNC_OUT_source － － 2 -0.3 3.92 5 7.0 0.50 63.0 1.05 － 0.9 0.18 1.35 0.8 1.94 1.225 － 1.22 － 40 － 0.593 － 0.6 0.90 1.8 4.5 1.8 4.5 44.0 1.94 0.9 1.94 0.05 1.94 0.05 － 3.8 － － － 2.5 -0.3 4.5 30 － － 4.00 － 7.5 0.60 65.0 1.50 100 1.1 0.20 1.50 1.0 2.00 1.25 VREFIN 1.25 － 50 － 0.625 0.50 － 1.00 3.5 9.0 3.5 9.0 45.5 2.00 1.0 2.00 0.10 2.00 0.10 100 4.0 － 150 300 － － 8.1 70 VCC 0.8 4.08 － 8.0 0.70 67.0 1.95 200 1.3 0.22 1.65 1.2 2.06 1.275 VIS1 1.28 0.9 60 0.9 0.657 － 1.6 1.10 7.0 18.0 7.0 18.0 47.0 2.06 1.1 2.06 0.15 2.06 0.15 200 4.2 0.5 300 400 VCT_SYNCH mA uA V V V mA V V kHz V Ω uA V V uA V V V V uA uA uA V V V V Ω Ω Ω Ω % V uA V V V V Ω V V Ω Ω V V Stand-by voltage H Stand-by voltage L ((REF4V BLOCK)) REF4V output voltage REF4V source current ((VCC UVLO BLOCK)) Operating voltage (VCC) Hysteresis width (VCC) System ＯＮ System ＯＦＦ ((OSC BLOCK)) Drive output frequency RT=18.9kΩ RT pin voltage SRT ON resistance ((SS STRK BLOCK)) Soft start current SS operation start voltage SS term END voltage STRK current STRK term END voltage ((FEED BACK BLOCK)) IS threshold voltage 1 IS threshold voltage 2 VS threshold voltage IS source current 1 IS source current 2 VS source current IS COMP detect voltage 1 IS COMP detect voltage 2 VREF input voltage range VREF applying voltage DUTY=1.5V DUTY=0V, IS=1.0V VREFIN≧1.25V VREFIN= 1V No effect at VREF＞1.25V Low = IS high (burst off) VCC=12V VCC=12V VCC=12V VCC=12V FOUT=65kHz ((DUTY BLOCK)) DUTY threshold voltage ((OUTPUT BLOCK)) LN output sink resistance LN output source resistance HFN output sink resistance HFN output source resistance MAX DUTY ((TIMER LATCH BLOCK)) Timer Latch setting voltage Timer Latch setting current ((COMP BLOCK)) COMP over voltage detect Hysteresis width (COMP) COMPSD over voltage detect Hysteresis width (COMPSD) VSS＞1.65V, SRT operate, CP timer latch VSS＞1.65V, OSC 2 count FAIL ON resistance ((SYNCHRONOUS BLOCK)) CT_SYNC_OUT High voltage CT_SYNC_OUT Low voltage CT_SYNC_OUT sink resistance CT_SYNC_OUT source resistance CT_SYNC_IN High voltage input range CT_SYNC_IN Low voltage input range VCT_SYNC_IN_H VCT_SYNC_IN_L 1 （This product is not designed to be radiation-resistant.） REV. B 3/4 〇Package Dimensions 〇Pin Description Device Mark PIN No. 1 2 3 4 PIN NAME PGND LN2 HFN2 CT_SYNC_IN FUNCTION Ground for FET drivers NMOS FET driver NMOS FET driver (New Function) CT synchronous signal input pin BD9270F 5 6 7 CT_SYNC_OUT CT synchronous signal output pin REF4V SRT RT GND DUTY FAIL STB CP VREF VS IS FB SS STRK COMPSD COMP VCC HFN1 LN1 Internal regulator output External resistor from SRT to RT for adjusting the start-up triangle oscillator External resistor from RT to GND for adjusting the triangle oscillator GROUND Control PWM mode and BURST mode Error mode OUTPUT Pin (open drain) Stand-by switch External capacitor from CP to GND for Timer Latch Reference voltage input pin for Error amplifier Error amplifier input Error amplifier input Error amplifier output External capacitor from SS to GND for Soft Start Control Striking time setting pin Over voltage detect pin with Shutdown Over voltage detect pin with timer latch Supply voltage input NMOS FET driver (New Function) NMOS FET driver Lot No. 8 9 10 11 12 SOP-24 (Unit:mm) 13 14 15 16 17 〇Block Diagram 18 19 20 21 22 23 24 REV. B 4/4 〇NOTE FOR USE １. This product is produced with strict quality control, but might be destroyed if used beyond its absolute maximum ratings. Once IC is destroyed, failure mode will be difficult to determine, like short mode or open mode. Therefore, physical protection countermeasure, like fuse is recommended in case operating conditions go beyond the expected absolute maximum ratings. ２. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended operating range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges, however the variation will be small. ３. Mounting failures, such as misdirection or miscounts, may harm the device. ４. A strong electromagnetic field may cause the IC to malfunction. ５. The GND pin should be the location within ±0.3V compared with the PGND pin. ALL Pin Voltage should be under VCC voltage +0.3V even if the voltage is under each terminal ratings. ６. BD9270F incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation of the thermal shutdown circuit is assumed. ７. When modifying the external circuit components, make sure to leave an adequate margin for external components actual value and tolerance as well as dispersion of the IC. ８. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching. Make sure to leave adequate margin for this IC variation. ９. Under operating CP charge (under error mode) analog dimming and burst dimming are not operate. 10. Under operating Slow Start Control (SS is less than 1.5V), It does not operate Timer Latch. 11. By STB voltage, BD9270F are changed to 2 states. Therefore, do not input STB pin voltage between one state and the other state (0.8～2.0V). 12. The pin connected a connector need to connect to the resistor for electrical surge destruction. 13. This IC is a monolithic IC which (as shown is Fig-1) has P+ substrate and between the various pins. A P-N junction is formed from this P layer of each pin. For example, the relation between each potential is as follows, ○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.) ○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.) Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin. Resistance (PinA) (PinB) C Transistor (NPN) B E GND P＋ P N P substrate GND Parasitic diode N P＋ P substrate GND Parasitic diode (PinB) (PinA) B Parasitic diode GND Other adjacent components Parasitic diode Ｃ Ｎ Ｎ N N Ｂ CＣ EＥ GND Fig-1 Simplified structure of a Bipolar IC REV. B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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