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BD9352GUL

BD9352GUL

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    BD9352GUL - Silicon Monolithic Integrated Circuit - Rohm

  • 数据手册
  • 价格&库存
BD9352GUL 数据手册
1/4 STRUCTURE PRODUCT SERIES TYPE BLOCK DIAGRAM PACKAGE PIN ASSIGNMENT Functions Silicon Monolithic Integrated Circuit 4-Channel Switching Regulator Controller for Digital Camera BD9352GUL Fig. 1 Fig. 2 Fig. 3 ● Contains cross converter(1ch), step-down converter(2ch), step-up converter(1ch), configurable for inverting/step-down converter(1ch). ● 2channels contain transistor for synchronous rectifying action mode. ● 1channels contain FETs for the step-up converter. ● All channels contain internal compensation. ● It is possible separately control all channel ● Operating frequency 1.5MHz(CH2), 750kHz(CH1,3,4). ● Contains output interception circuit when over load. ● 1 channels have high side switches with soft start function. ● 3.3mm×3.3mm t = 0.55mm WLCSP package (VCSP50L3) ○Absolute maximum ratings (Ta=25℃) Parameter Symbol Limit Unit VCC -0.3~7 V VHx1~2 -0.3~7 V HS4H -0.3~7 V Power Input Voltage VLx4 -0.3~22 V VDCM3 VCC-15~0.3 V IomaxHx1 +2.0 A IomaxHx2 +1.0 A Output Current IomaxHS4 +1.2 A IomaxLx4 ±1.0 A Power Dissipation Pd 1325(*1) mW Operating Temperature Topr -25~+85 ℃ Storage Temperature Tstg -55~+150 ℃ Junction Tempareture Tjmax +150 ℃ (*1) When mounted on a glass epoxy PCB (50 mm x 58 mm x 1.75 mm). Reduced by 10.6 m W/°C when using at Ta = 25 °C or higher. Power Supply Voltage ○Recommended operating conditions Parameter Power Supply Voltage VREF Pin Connecting Capacitor VREGA Pin Connecting Capacitor Symbol Limit MIN 2.5 0.47 0.47 TYP 1.0 1.0 MAX 5.5 4.7 4.7 Unit VCC CVREF CVREGA V μF μF Status of this document The Japanese version of this document is the official specification. Please use the translation version of this document as a reference to expedite understanding of the official version. If these are any uncertainty in translation version of this document, official version takes priority. REV. B 2/4 ○Electrical characteristics(Ta=25℃, VCC=3.0V, STB1~4=3V) Parameter Symbol MIN 2.4 Limit TYP 2.5 MAX 2.6 Unit Conditions Parameter 【 Output Driver】 V Io=5mA CH1 LX11 terminal Highside SW ON Resistance CH1 LX11 terminal Lowside SW ON Resistance CH1 LX12 terminal Highside SW ON Resistance CH1 LX12 terminal Lowside SW ON Resistance CH2 Highside SW ON Resistance CH2 Lowside SW ON Resistance CH3 Driver Output voltage H CH3 Driver Output voltage L CH4 NMOS SW ON Resistance CH4 Load SW ON Resistance 【Discharge switch】 IINV VINV1 0.79 0 0.80 50 0.81 nA V INV1~4, NON3=3.0V CH1, 2, 4 CH3discharge SW ON Resistance RDCM 82 165 330 Ω RON11P 120 200 mΩ Hx1=3.0V Symbol MIN Limit TYP MAX Unit Conditions 【 Internal Regulator VREGA】 Output Voltage VREGA 【Prevention Circuit of Miss Operation by Low voltage Input】 Threshold Vstd2 Voltage Hysteresis ⊿Vstd1 Width 【Short Circuit Protection】 SCP Tscp detect time Timer start threshold Vtcinv voltage 【Oscillator】 Frequency CH2 Frequency CH1,3,4 Max duty CH1 LX11 Max duty CH1 LX12 Max duty 2 (step-down) Max duty 3,4 【Error Amp】 Input Bias current INV threshold 1 CH3 Output Voltage Line Regulation Output Current When Shorted 【Soft start】 CH1 Soft Start Time CH2 Soft Start Time CH3 Soft Start Time CH4 Soft Start Time Tss1 Tss2 Tss3 Tss4 2.6 0.6 2.6 2.6 3.5 0.9 3.5 3.5 4.4 1.2 4.4 4.4 msec msec msec msec 2.25 50 2.3 100 2.35 150 V mV VCC Monitor RON11N - 130 210 mΩ VCC=3.0V RON12P - 120 200 mΩ VOUT1=3.0V 20 0.38 25 0.48 30 0.58 ms V Monitor CH2 INV RON12N RON2P RON2N Vout3H Vout3L RON4N RON4P VCC -1.5 - 100 250 250 VCC -1.0 0.5 500 250 160 400 400 1.0 800 350 mΩ mΩ mΩ V V mΩ mΩ VCC=3.0V Hx2=3.0V VCC=3.0V IOUT3=-50mA ,NON3=0.2V IOUT3=50mA NON3=-0.2V VCC=3.0V HS4H=3V , VCC=3.0V fosc1 fosc2 Dmax11 Dmax12 Dmax2 Dmax3,4 1.2 0.6 86 86 1.5 0.75 92 92 1.8 0.9 100 96 100 96 MHz MHz % % % % 【Switch to configure Inverting/Step-down】 IDSEL Control voltage Step down Inverting VIDDO VIDIN 【 For Inverting Base Bias Voltage Vref】 VOUT3 DVLi Ios -7.105 0.2 -7.00 4.0 1.0 -6.895 12.5 V mV mA VCC=2.8~5.5V Vref=0V VCC ×0.7 0 - VCC VCC ×0.3 V V (※1) (※1) 【STB1~4】 STB Control voltage Active Not Active VSTBH1 VSTBL1 RSTB1 1.5 -0.3 250 400 5.5 0.3 700 V V kΩ Pull down Resistance 【 Circuit Current】 VBAT terminal Hx terminal Stand-by Current Lx terminal HS4H terminal Circuit Current (VCC current when voltage supplied for the terminal) ISTB1 ISTB2 ISTB3 ISTB4 - - 5 5 5 5 μA μA μA μA INV1~ 4=1.2V , NON3=-0.2V Step down Step up Icc - 2.0 4.0 mA (※1)The input of IDSEL terminal is CMOS inverter input that makes VCC a power supply. Please connect to either of GND or VCC for irregular prevention. ◎This product is not designed for normal operation with in a radioactive environment REV. B 3/4 ○Block Diagram ○Package BD9352 LOT No. (UNIT : mm) Fig. 2 Exposing the package to strong light like the strobe will cause incorrect operation of the device. Please confirm the operation after measure of shading so that light should not enter. Fig. 1 Pin No. A1,B1 A2 Pin Name GND HX2 LX2 PGND2 HX1 INV2 STB2 STB1 STB3 LX11 VCC VREGA STB4 PGND1 HS4H INV4 IDSEL LX12 HS4L VREF3 NON3 I NV3 I NV1 VOUT1 TEST1 LX4 PGND34 OUT3 DCM3 TEST2 Functions Ground terminal CH2 Input terminal for synchronous High side switch, Power supply for Pch Driver CH2 Terminal for connecting inductors CH2 Ground terminal for internal FET CH1 Input terminal for synchronous High side switch, Power supply for Pch Driver CH2 Error AMP inverted input CH2 ON/OFF switch CH1 ON/OFF switch CH3 ON/OFF switch Terminal for connecting inductor for CH1 input Input for battery voltage VREGA Output CH4 ON/OFF switch CH1 Ground terminal for internal FET CH4 Power supply for internal load switch CH3 Error AMP inverted input CH3 Inverting /Step down mode selector L : Inverting, H : Step down Terminal for connecting inductor for CH2 output CH4 Power supply for internal load switch CH3 base bias voltage CH3 Error AMP non-inverted input CH3 Error AMP inverted input CH1 Error AMP inverted input CH1voltage output terminal TEST terminal. Please short GND or OPEN CH4 Terminal for connecting inductors Ground terminal for CH3 driver and CH4 internal FET Terminal for connecting gate of CH3 PMOS CH3 output voltage discharge terminal. When you don’t use discharge function, please short GND terminal. TEST terminal. Please short GND or OPEN ○Pin Assignment A3 A4 A5, A6 1 A GND 2 HX2 3 LX2 4 PGND2 5 HX1 6 HX1 B2 B3 B4 B5 B6 C1 B GND INV2 STB2 STB1 STB3 LX11 C2 C5 C6 D1 D2 D5 C VCC VREGA STB4 PGND1 D HS4H INV4 IDSEL LX12 D6 E1 E2 E3 E4 E5 E6 E HS4L VREF3 NON3 INV3 INV1 VOUT1 F TEST1 LX4 PGND34 OUT3 DCM3 TEST2 F1 F2 F3 F4 F5 F6 Fig. 3 REV. B 4/4 ○Operation Notes 1.) Absolute maximum ratings This product is produced with strict quality control. However, the IC may be destroyed if operated beyond its absolute maximum ratings. If the device is destroyed by exceeding the recommended maximum ratings, the failure mode will be difficult to determine. (E.g. short mode, open mode) Therefore, physical protection counter-measures (like fuse) should be implemented when operating conditions beyond the absolute maximum ratings anticipated. 2.) GND potential Make sure GND is connected at lowest potential. All pins except NON3, must not have voltage below GND. Also, NON3 pin must not have voltage below - 0.3V on start up. 3.) Setting of heat Make sure that power dissipation does not exceed maximum ratings. 4.) Pin short and mistake fitting Avoid placing the IC near hot part of the PCB. This may cause damage to IC. Also make sure that the output-to-output and output to GND condition will not happen because this may damage the IC. 5.) Actions in strong magnetic field Exposing the IC within a strong magnetic field area may cause malfunction. 6.) Mutual impedance Use short and wide wiring tracks for the main supply and ground to keep the mutual impedance as small as possible. Use inductor and capacitor network to keep the ripple voltage minimum. 7.) Voltage of STB pin The threshold voltages of STB pin are 0.3V and 1.5V. STB state is set below 0.3V while action state is set beyond 1.5V. The region between 0.3V and 1.5V is not recommended and may cause improper operation. The rise and fall time must be under 10msec. In case to put capacitor to STB pin, it is recommended to use under 0.01μF. 8.) Thermal shutdown circuit (TSD circuit) The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. 9.)Light sensitivity Exposing the package to strong light like the strobe will cause incorrect operation of the device. Please confirm the operation after measure of shading so that light should not enter. 10.)IC Terminal Input This IC is a monolithic IC that has a P- board and P+ isolation for the purpose of keeping distance between elements. A P-N junction is formed between the P-layer and the N-layer of each element, and various types of parasitic elements are then formed. For example, an application where a resistor and a transistor are connected to a terminal (shown in Fig.4): ○When GND > (terminal A) at the resistor and GND > (terminal B) at the transistor (NPN), the P-N junction operates as a parasitic diode. ○When GND > (terminal B) at the transistor (NPN), a parasitic NPN transistor operates as a result of the NHayers of other elements in the proximity of the aforementioned parasitic diode. Parasitic elements are structurally inevitable in the IC due to electric potential relationships. The operation of parasitic elements Induces the interference of circuit operations, causing malfunctions and possibly the destruction of the IC. Please be careful not to use the IC in a way that would cause parasitic elements to operate. For example, by applying a voltage that is lower than the GND (P-board) to the input terminal. Resistor (Terminal A) Transistor (NPN) B E (Terminal BC ) GND N (TerminalA) Parasitic element N GND P+ N N P P+ N Parasitic element N P+ N P P-board P+ P-board Parasitic l t GND Fig – 4 Simplified structure of a Bipolar IC REV. B ~ ~ Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A
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