BD9641NUV

Single-chip Type with Built-in FET Switching Regulator Series High-efficiency Step-up Switching Regulator with Built-in Power MOSFET BD9641NUV No.09027EAT27 ●Description BD9641NUV is synchronous rectification 1ch boost Switching converter built in Power MOS FET. Input voltage is 2.5V～5.5V. Low power consumption can be achieved. And, because Back-gate control function is built-in, the load can be isolated from the input without external FET in shutdown mode. ●Features 1) PWM synchronous rectification method 2) Input voltage is 2.5V～5.5V 3) Switching frequency is 900kHz. 4) Built in under voltage lockout function 5) Built in protection circuit(short-circuit protection,Thermal shutdown) 6) Built in back gate control function 7) Output voltage can be set by external resistance. 8) Built in power MOS FET transistor 9) Built in soft start function 10) VSON010V3030 package ●Application ・ For DSC/DVC motor ・ For cellular phone ・ For application using lithium cell ●Absolute maximum rating(Ta=25[℃]) Item Symbol Power-supply voltage VBAT Power Dissipation Pd Operating temperature range Topt Storage temperature range Tstg SW terminal current Isw Terminal allowable voltage VIN Junction temperature Tjmax ※1 ※2 Derating in done 5.6[mW/℃] for operating above Ta=25 [℃]. (Mount on 1-layer 70.0[mm]×70.0[mm]×1.6[mm] board.) Do not exceed Pd. Rating -0.3～7 700※1 -20～+70 -55～+150 1.8※2 -0.3～7 +150 Unit V mW ℃ ℃ A V ℃ ●Operationg condition Item (Ta= -20～+70[℃]) Symbol VBAT VOUT Min 2.5 2.8 Limits Typ 3.7 5 Max 5.5 5.5 Unit V V Power-supply voltage Output voltage setting range www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 1/12 2009.05 - Rev.A BD9641NUV ●Electric characteristics (Unless otherwise specified. VBAT=3.7[V], Ta=25[℃]) Limits Item Symbol Min Typ Max [Device] Current consumption ICC 0.9 1.8 Shutdown current ICCOFF 0 10 XSHDN input current IIH 4.63 9.25 18.5 [Step-up DC/DC blobk] Soft start time TSOFT 1.25 2.5 5.0 FB terminal voltage VFB 0.39 0.40 0.41 Oscillation frequency FOSC 675 900 1125 Max duty cycle DMAX 76.5 85 93.5 PMOS ON resistance RONP 0.4 0.65 NMOS ON resistance RONN 0.35 0.60 [Voltage drop detection Block] UVLO Detecting voltage VUVLO1 2.05 2.15 2.25 UVLO Return voltage VUVLO2 2.10 2.20 2.30 [XSHDN block] XSHDN H Input voltage VIH 1.5 XSHDN L Input voltage VIL 0.3 [GND short detection Block] Timer latch time TLATCH 0.35 0.7 1.4 GND short detection voltage VSHORT 0.1 0.2 0.3 Technical Note Unit mA μA μA ms V kHz % Ω Ω V V V V ms V Condition VBAT=3.7[V], No load VBAT=3.7[V],XSHDN=GND XSHDN Voltage=3.7[V] VOUT=5[V] 85％ VOUT=5[V] VOUT=5[V] VBAT=2.5～5.5[V] ●Reference data(Unless otherwise noted, Ta=25[℃]) 100 90 80 Efficiency[%] 60 50 40 30 20 10 10 100 output current[mA] VBAT=2.5[V] VBAT=3.0[V] VBAT=3.7[V] 1000 100 90 80 100 90 80 Efficiency[%] Efficiency[%] 70 70 60 50 40 30 20 10 10 100 70 60 50 40 30 20 10 VBAT=2.5[V] VBAT=3.0[V] VBAT=3.6[V] 10 100 1000 VBAT=2.5[V] VBAT=3.0[V] VBAT=3.7[V] 1000 output current[mA] output current[mA] Fig.1 Output current - Efficiency characteristic (5.015[V] Output voltage setting) Efficiency= 94% (150mA) Fig.2 Output current - Efficiency characteristic (4.2[V] Output voltage setting) Efficiency = 96% (150mA) Fig.3 Output current - Efficiency characteristic (3.6[V] Output voltage setting) Efficiency = 95% (100mA) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 0 100 200 300 3.0 3 .0 Output voltage精 度 [% ] [%] 出 力 電 圧 accuracy Output出力電圧精度[%] voltage accuracy%] 2.0 1.5 1.0 0.5 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 VBAT=2.5[V] VBAT=3.0[V] VBAT=3.7[V] 0 100 200 300 400 負荷電流[mA] 500 600 Output voltage accuracy [%] 出力電圧精度[%] 2.5 2 .5 2 .0 1 .5 1 .0 0 .5 0 .0 -0 .5 -1 .0 -1 .5 -2 .0 -2 .5 -3 .0 0 10 0 20 0 30 0 4 00 5 00 60 0 VBAT=2.5[V] VBAT=3.0[V] VBAT=3.7[V] VBAT=2.5[V] VBAT=3.0[V] VBAT=3.6[V] 400 500 600 負荷電流[mA] Output Current[mA] Output Current[mA] 負荷電流[mA] Output Current[mA] Fig.4 Output current－ Output voltage accuracy characteristic (5.015[V] Output voltage setting) Fig.5 Output current－ Output voltage accuracy characteristic (4.2[V] Output voltage setting) Fig.6 Output current－ Output voltage accuracy characteristic (3.6[V] Output voltage etting) www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 2/12 2009.05 - Rev.A BD9641NUV Technical Note XSHDN 5V/div SW 5V/div SW 5V/div VOUT 2V/div VOUT 200mV/div VOUT 200mV/div IBAT 1A/div VBAT=3.7[V] VOUT=5.015[V] IOUT=400[mA] Fig.7 Output voltage wave form VBAT=2.5V VOUT=5.015[V] IOUT=400[mA] Fig.8 Output voltage wave form VBAT=3.7[V] VOUT =5.015[V] IOUT=0[mA] Fig.9 Start wave form IOUT 200mV/div IOUT 200mA/div IOUT 200mV/div VOUT 50mV/div VOUT 50mV/div VOUT 50mV/div VBAT=3.7[V] VOUT=5.015[V] IOUT=100[mA] ⇔ 400[mA] Fig.10 Load transient response wave form VBAT=3.7[V] VOUT=5.0VIT=100[mA]→4 00[mA] Fig.11 Load transient response wave form VBAT=3.7[V] VOUT=5.015[V] IOUT=400[mA]→100[mA] Fig.12 Load transient response wave form VBAT 500mV/div VBAT 500mV/div VBAT 500mV/div VOUT 50mV/div VOUT 50mV/div VOUT 50mV/div VBAT=3.1[V]⇔3.7[V] VOUT=5.015[V] IOUT=0[mA] Fig.13 Power-line transient response wave form VBAT=3.1[V]→3.7[V] VOUT=5.015[V] IOUT=0[mA] Fig.14 Power-line transient response wave form VBAT=3.7[V]→3.1[V] VOUT=5.015[V] IOUT=0[mA] Fig.15 Power-line transient response wave form www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 3/12 2009.05 - Rev.A BD9641NUV ●Block Diagram Technical Note VBAT 1 10 VOUT XSHDN 2 OUTPUT CONTROL 9 SW N.C. 3 MAX DUTY 0.4V 8 PGND N.C. 4 7 GND SAW N.C. 5 SOFT START 6 FB Fig.13 Block Diagram ●Pin layout and function Terminal No Terminal Name 1 2 3 4 5 6 7 8 9 10 VBAT XSHDN N.C. N.C. N.C. FB GND PGND SW VOUT Feed back terminal GND terminal GND terminal for power MOS Switching terminal DC/DC converter output voltage terminal Power supply input terminal Chip shut down terminal (Shut down at XSHDN=GND) Function www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 4/12 2009.05 - Rev.A BD9641NUV ●Description of input / output terminal Terminal Terminal No. Name Technical Note Equivalent Circuit Function VBAT 1 VBAT FB *1 Power input terminal *1 Clamp for protecting from E.S.D GND VBAT 2 XSHDN XSHDN TTL level input terminal *1 Clamp for protecting from E.S.D 400[kΩ] GND VBAT 6 FB FB Analog input terminal GND GND 7,8 GND PGND PGND GND terminal VOUT 9 SW *1 SW Power MOS driver for synchronous rectification *1 Clamp for protecting from E.S.D PGND VOUT 10 VOUT DC/DC output terminal *1 Clamp for protecting from E.S.D PGND www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 5/12 2009.05 - Rev.A BD9641NUV Technical Note ●Functional Description 1. DC/DC converter The device integrates Power MOS FET to realize a synchronous rectifier. The device begins starting up with the soft start when XSHDN=H and VBAT rises to UVLO return voltage (2.20[V] typ) built-in this IC (Fig.14). According to the load, the PWM duty is kept variable and the output voltage are kept constant. The device needs inductor and capacitor for boost, bypass capacitor between power supply and GND, resistance divider and capacitor at the feedback loop. The maximum output load current is 530mA. (Input voltage 2.9V or more) 2.5[V]～5.3[V] VBAT 0[V] H input voltage XSHDN 0[V] Electricity is discharged according to load. 85％ =VOUT[V] VOUT 0[V] ≒VBAT[V] ON_delay SOFT Softstart period 2.5[ms] Fig.14 DC/DC converter start wave form 2. About output voltage setting Output voltage of DC/DC converter is shown by the following expressions. Vout  R1  R2 R2  VFB (VFB=0.4V) Vout R1 FB VFB(=0.4[V]) ERROR AMP R2 R1, R2: external resister VFB: internal reference voltage(=0.4[V]) Fig.15 Output voltage setting 3. Back gate control function Back gate control function is built into the IC. It can be isolated VOUT from the power supply. Back gate control function is a function to intercept the output by connecting the back gate of PMOS with the SW side at XSHDN=L (shutdown) and timer latch. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 6/12 2009.05 - Rev.A BD9641NUV Technical Note 4. Shut down function The device becomes shutdown condition when XSHDN terminal is GND. Then, the back gate of PMOS is connected to the SW side by the function of back gate control, and the VOUT output is isolated from the power supply. The device becomes normal operation after the soft start when XSHDN terminal is VBAT. The VBAT terminal and the XSHDN terminal must be used by below condition with start-up. Shut down release wave form of BD9641NUV IC Fig.16 Start-up operation CONDITION：(1) The time when VBAT reaches 1V (2) XSHDN is less than 0.19V For example, when VBAT and XSHDN is rised voltage at once, the device is set CR for rising time of VBAT to insert CR filter such as Fig.17. Fig.17 Example of external circuit 5. Thermal shutdown function The switching is stopped when the temperature of the chip rises in addition exceeding Tjmax, and both PMOS and NMOS of the SW output are turned off. It usually returns to operation after software starts again when the temperature of the chip decreases. 6. UVLO function If VBAT voltage is less than 2.15[V](typ.), switching is stopped so as to prevent irregular operation of IC due to under voltage, and PMOS and NMOS of SW terminal turns off. If VBAT voltage return to over 2.20[V](typ.), the shutdown function is released, and it is restarted. ●Ground short circuit protection function FB terminal voltage is watched. If it is less than detected voltage of ground short circuit protection(0.2[V]typ.), timer circuit of IC operates. When the condition continues into 0.7[ms] by timer latch circuit, the device latches with Power NMOS off. Then backgate control of IC is worked VOUT output is isolated from the power supply. The release of latch are XSHDN=GND or restart-up of the power source. Fig.18 Ground short circuit protection function www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 7/12 2009.05 - Rev.A BD9641NUV ●Application circuit figure L VBAT Technical Note INPUT 2.5V～5.5V 1 VBAT VOUT 10 Line is thick and short VOUT XSHDN 2 XSHDN SW 9 C2 R1 C3 OUTPUT 2.8V～5.5V MAX OUTPUT CURRENT 400mA（VBAT=2.5V,VOUT=5V） 600mA（VBAT=3.7V,VOUT=5V） Allocated near PIN C1 3 N.C. PGND 8 Allocated near PIN 4 N.C. GND 7 5 N.C. FB 6 R2 GND 1Point short Fig.19 Application circuit figure ○Constant of external parts (recommend value) Recommended inductor Maker Part number Case of output voltage is 5.015[V] Inductance 3.3μH L Taiyo Yuden NR4018T3R3M The peak current of the inductor does not to exceed allowable current of inductor, please. Recommended capacitor Maker C1 Taiyo Yuden C2 Taiyo Yuden C3 Taiyo Yuden Resistor value Resistor value R1 150kΩ R2 13kΩ Output voltage VOUT：  0.4 [V] R2 It is decided, the accuracy of output voltage is changed by resister accuracy of R1, R2. VOUT  R1 Part number LMK212BJ106MG JMK107BJ106KG TMK063CH680JP Inductance 10μF 10μF 68pF  R2 www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 8/12 2009.05 - Rev.A BD9641NUV Technical Note ●Notes for Use 1．About PCB layout ・VBAT terminal must connect to the power supply on the board. ・PGND,GND must be connected to ground on the board. ・The line of VBAT, PGND, GND terminal is thick and short, and the impedance is low, please. ・Please stick the bare pad of reverse package to the board with solder to GND pattern on the PCB. In the case of unconnected, head radiation characteristics is fallen and package power (permissible dissipation)is fallen. ・The output voltage of DC/DC converter draw from both ends of capacitor near output ,please. ・DC/DC converter is affected the performance according to board pattern or neighboring parts. So please consider the design of neighboring circuit. 2. About neighboring circuit ・Please use ceramic capacitor of low ESR to bypass capacitor between power supply and GND. And allocate it to as near as possible to the pin. ・Please allocate external parts such as inductor , capacitor and so on, as near as possible to IC. ・Please draw output voltage from the both ends of capacitor. Especially, please connect the wire which is run large current thick and short. ・Because of output short of CH1, over current run to the external diode, it is possible to destroy IC. Please not to run over current by the physical provision such as using Poly-switch, fuse and so on. 3．About start-up ・Please keep light load when starting-up IC. 4．Notes for absolute maximum rating ・Exceeding supply voltage and operating Temp over Absolute Maximum Ratings may cause degradation of IC and even may destroy the IC. if special mode such that exceeding Absolute Maximum Ratings is expected, please have safe countermeasure such as adding POLY SWITCH and fuse to avoid from over stressing. 5．Notes for heat design ・Do not exceed the power dissipation (PD) of the package specification rating under actual operation. 6．Short circuit mode between terminals and wrong mounting ・While mounting IC on the board, check direction and position of the IC. If inadequately mounted, the IC may destroy. Moreover this IC might be destroyed when dust short the terminals between pins or pin and ground. Avoid the VOUT-GND short-circuit. 7．Radiation ・ Strong electromagnetic radiation can cause operation failures. 8．Notes for Thermal shutdown (TSD) ・Main purpose of TSD is to shutting IC down from runaway effect. It is not to compensate or to protect set device. Therefore, please do not continuously operate the IC after TSD circuit is activated and/or premise operations such that TSD circuit function being used. 9．Notes for test of mounted print board ・While connecting capacitor to Low impedance pins, please discharge capacitor by one process by another to prevent stressing the IC. While mounting and removing the IC to/from the Board in the inspection process, be sure to turn off the power supply at each actions. Moreover equip ground earth in assembling process for ESD protection and handle with care during the test and/or transportation. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 9/12 2009.05 - Rev.A BD9641NUV Technical Note 10．Notes for each input terminal ・This IC is a monolithic IC, and has P+ isolation and P substrate for the element separation. Therefore, a parasitic PN junction is firmed in this P-layer and N-layer of each element. For instance, the resistor or the transistor is connected to the terminal as shown in the figure below. When the GND voltage potential is greater than the voltage potential at Terminals A or B, the PN junction operates as a parasitic diode. In addition, the parasitic NPN transistor is formed in said parasitic diode and the N layer of surrounding elements close to said parasitic diode. These parasitic elements are formed in the IC because of the voltage relation. The parasitic element operating causes the wrong operation and destruction. Therefore, please be careful so as not to operate the parasitic elements by applying lower voltage than GND (P substrate) to input terminals. Moreover, please apply each input terminal with lower than the power-supply voltage or equal to the specified range in the guaranteed voltage when the power-supply voltage being applied. Example of simple structure of IC 11．Used application ・The IC is designed for DSC/DVC. ・Please consult with sales representative when you consider using to the machine, device except above application. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 10/12 2009.05 - Rev.A BD9641NUV ●Power Dissipation Technical Note Fig.20 Permissible Dissipation 5.5V Icc VBAT VOUT Iout=600mA RP SW Iin RN PGND Fig.21 About calculation of permissible dissipation ・Example of calculate of power dissipation (Input voltage=2.5[V], Output voltage=5.5[V], Output current=400[mA]) ・The loss of Power Tr : Pd(DC) (Rp:PMOS ON resistance RN:NMOS ON resistance D:Switching duty of SW terminal η:Efficiency) Pd(DC) = (Rp × (1 - D) + Rn × D) × Iin × 2 1- η η 2 = {Rp × (1 - D) + Rn × D} × (Iout × Vout / Vin) × 1- η η 1 - 0.7 0.7 = {0.65 × (1 - 0.7) + 0.6 × 0.7} × (0.4 × 5.5/ 2.5) × = 0.615 × 0.7744 × 1 - 0.7 0.7 = 0.204(W) 2 ・The loss of internal consumed power of IC : Pd(Icc) Pd(Icc)=Vcc×Icc (Vcc：power supply voltage Icc：Consuming current) =5.5×0.001=0.0055 Therefore, the power dissipation caused in IC : Pd=Pd(DC)+Pd(Icc)=0.210(W) Please examine the design of circuit not to exceed the power dissipation described. (*) Please connect surely the bare pad of reverse package to the board to use solder. www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. 11/12 2009.05 - Rev.A BD9641NUV ●Ordering Name Selection Technical Note B D 9 Part No. 6 4 1 N U V - E 2 Part No. Package NUV: VSON010V3030 Packaging and forming specification E2: Embossed tape and reel (VSON010V3030) VSON010V3030 3.0±0.1 3.0±0.1 Tape Quantity S (0.22) Embossed carrier tape 3000pcs E2 The direction is the 1pin of product is at the upper left when you hold 1.0MAX 1PIN MARK 0.08 S 2.0±0.1 0.5 0.4±0.1 C0.25 1.2±0.1 1 5 10 6 +0.03 0.02 -0.02 Direction of feed ( reel on the left hand and you pull out the tape on the right hand ) 0.5 +0.05 0.25 -0.04 1pin Direction of feed (Unit : mm) Reel ∗ Order quantity needs to be multiple of the minimum quantity. www.rohm.com © 2009 ROHM Co., Ltd. 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