BD9897FS

BD9897FS

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    BD9897FS - Silicon Monolithic Integrated Circuit - Rohm

  • 详情介绍
  • 数据手册
  • 价格&库存
BD9897FS 数据手册
1/4 STRUCTURE NAME OF PRODUCT TYPE FUNCTION Silicon Monolithic Integrated Circuit DC-AC Inverter Control IC BD9897FS ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ 36V High voltage process 1ch control with Full-Bridge Lamp current and voltage sense feed back control Sequencing easily achieved with Soft Start Control Short circuit protection with Timer Latch Under Voltage Lock Out Mode-selectable the operating or stand-by mode by stand-by pin Synchronous operating the other BD9897FS IC’s BURST mode controlled by PWM and DC input Output liner Control by external DC voltage ○Absolute Maximum Ratings(Ta = 25℃) Parameter Supply Voltage BST pin SW pin BST-SW voltage difference Operating Temperature Range Storage Temperature Range Maximum Junction Temperature Power Dissipation * Symbol VCC BST SW BST-SW Topr Tstg Tjmax Pd Limits 36 40 36 7 -40~+85 -55~+150 +150 950* Unit V V V V ℃ ℃ ℃ mW Pd derate at 7.6mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm) 〇Operating condition Parameter Supply voltage BST voltage BST-SW voltage difference CT oscillation frequency BCT oscillation frequency Symbol VCC BST BST-SW fCT fBCT Limits 7.5~30.0 4.0~36.0 4.0~6.5 60~180 0.05~1.00 Unit V V V kHz kHz Status of this document The Japanese version of this document is the official specification. Please use the translation version of this document as a reference to expedite understanding of the official version. If these are any uncertainty in translation version of this document, official version takes priority. REV. B 2/4 ○ Electric Characteristics(Ta=25℃,VCC=24V) Parameter ( (WHOLE DEVICE) ) Operating current Stand-by current ( (STAND BY CONTROL) ) Stand-by voltage H Stand-by voltage L ( (UVLO BLOCK)) ) Operating voltage (VCC) Hesteresis width (VCC) Operating voltage (UVLO) Hesteresis width (UVLO) ( (REG BLOCK) ) REG output voltage REG source current ( (OSC BLOCK) ) Active edge setting current Negative edge setting current OSC Max voltage OSC Min voltage Soft start current SRT ON resistance ( (BOSC BLOCK) ) BOSC Max voltage BOSC Min voltage BOSC constant current BOSC frequency ( (FEED BACK BLOCK) ) IS threshold voltage 1 IS threshold voltage 2 VS threshold voltage IS source current 1 IS source current 2 VS source current IS COMP detect voltage ① IS COMP detect voltage ② VREF input voltage range ( (DUTY BLOCK) ) High voltage Low voltage DUTY-OUT sink resistance DUTY-OUT source resistance ( (OUTPUT BLOCK) ) LN output sink resistance LN output source resistance HN output sink resistance HN output source resistance MAX DUTY OFF period Drive output frequency ( (TIMER LATCH BLOCK) ) Timer Latch setting voltage Timer Latch setting current ( (COMP CLOCK) ) COMP1 over voltage detect voltage COMP2 over voltage detect voltage COMP2 under voltage detect voltage ① COMP2 under voltage detect voltage ② ((Synchronous Block)) High voltage Low voltage CT_SYNC sink resistance CT_SYNC source resistance High voltage input range Low voltage input range Symbol MIN. - - 2.0 -0.3 5.7 0.26 2.179 0.074 5.68 20.0 1.35/(RT*7) Iact×29 1.8 0.35 0.6 - 1.94 0.40 1.35/BRT 291 1.225 - 1.220 - 32 - 0.90 - 0.6 2.8 - - - 0.75 2.5 1.25 2.5 46.0 100 58.5 1.94 0.40 2.460 2.460 1.225 0.606 2.8 - - - 2.0 -0.3 Limits TYP. 7.2 13.0 - - 6.0 0.35 2.25 0.098 5.80 - 1.5/(RT*6) Iact×35 2.0 0.45 1.1 100 2.00 0.50 1.5/RT 300 1.250 VREFIN 1.250 - 50 - 0.94 VREFIN×0.73 - 3.1 150 250 1.5 5 2.5 5 48.0 200 60.0 2.0 0.55 2.485 2.485 1.25 0.625 3.1 - 150 370 - - MAX. 13 30.0 VCC 0.8 6.3 0.43 2.321 0.122 5.92 - 1.65/(RT*5) Iact×41 2.2 0.60 1.6 200 2.06 0.60 1.65/RT 309 1.275 VIS① 1.280 0.9 68 0.9 0.98 - 1.6 3.4 0.5 300 500 3.0 10 5.0 10 49.5 400 61.5 2.06 0.70 2.510 2.510 1.275 0.644 3.4 0.5 300 740 3.3 0.6 Unit Conditions Icc1 Icc2 VstH VstL VuvloH ⊿VCC_Vuvlo Vuvlo2 ⊿Vuvlo VREG IREG Iact Ineg VOSCH VOSCL ISS RSRT VBCTH VBCTL IBCT fBCT VIS① VIS② VVS IIS1 IIS2 IVS VISCOMP① VISCOMP② VREFIN VDUTY-OUTH VDUTY-OUTL RDUTY-OUTSink RDUTY-OUTSouce RsinkLN RsourceLN RsinkHN RsourceLN MAX DUTY TOFF FOUT VCP ICP VCOMPH VCOMP2_H VCOMP_L_1 VCOMP_L_2 VCT_SYNCH VCT_SYNCL RCT_SYNC_SYNC RCT_SYNC_SOURCE VCT_SYNC_IN_H VCT_SINK_IN_L mA μA V V V V V V V mA A A V V μA Ω V V A Hz V V V μA μA μA V V V V V Ω Ω Ω Ω Ω Ω % ns kHz V μA V V V V V V Ω Ω V V CT_SYNC_IN = OPEN System ON System OFF VCC>7.0V fCT=120kHz fCT=120kHz fBCT=0.3kHz fBCT=0.3kHz VBCT=0.2V (BRT=33kΩ BCT=0.048μF) VREF applying voltage DUTY=2.2V DUTY=0V IS=0.5V VREFIN≧1.25V VREFIN<1.25V No effect at VREF>1.25V VBST-VSW=5.0V VBST-VSW=5.0V FOUT=60kHz (RT=4.7kΩ CT=235pF) VSS>2.2V VSS>2.2V VSS>2.2V VSS<2.2V (This product is not designed to be radiation-resistant.) REV. B 3/4 〇Package Dimensions 〇Pin Description Device Mark PIN No. 1 2 PIN NAME PGND LN2 HN2 SW2 BST2 CT_SYNC_IN CT_SYNC_OUT SRT RT CT GND BCT BRT DUTY DUTY_OUT STB CP FAIL VREF VS IS FB SS COMP2 COMP1 VCC UVLO REG BST1 SW1 HN1 LN1 FUNCTION Ground for FET drivers NMOS FET driver NMOS FET driver Lower rail voltage for HN2 output Boot-Strap input for HN2 output CT synchronous signal input pin CT synchronous signal output pin External resistor from SRT to RT for adjusting the triangle oscillator External resistor from SRT to RT for adjusting the triangle oscillator External capacitor from CT to GND for adjusting the triangle oscillator GROUND External capacitor from BCT to GND for adjusting the BURST triangle oscillator External resistor from BRT to GND for adjusting the BURST triangle oscillator Control PWM mode and BURST mode BURST signal output pin Stand-by switch External capacitor from CP to GND for Timer Latch COMP2 under voltage protect clock output Reference voltage input pin for Error amplifier Error amplifier input Error amplifier input Error amplifier output External capacitor from SS to GND for Soft Start Control Under, over voltage detect pin Over voltage detect pin Supply voltage input External Under Voltage Lock Out Internal regulator output Boot-Strap input for HN1 output Lower rail voltage for HN1 output NMOS FET driver NMOS FET driver BD9897FS 3 4 5 Lot No. 6 7 8 9 10 SSOP-A32 (Unit:mm) 11 12 〇Block Diagram 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 REV. B 4/4 〇NOTE FOR USE 1. When designing the external circuit, including adequate margins for variation between external devices and IC. Use adequate margins for steady state and transient characteristics. 2. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended operating range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges, however the variation will be small. 3. Mounting failures, such as misdirection or miscounts, may harm the device. 4. A strong electromagnetic field may cause the IC to malfunction. 5. The GND pin should be the location within ±0.3V compared with the PGND pin. 6. BD9897FS incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation of the thermal shutdown circuit is assumed. 7. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened. Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need to be considered when using a device beyond its maximum ratings. 8. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching. Make sure to leave adequate margin for this IC variation. 9. On operating Slow Start Control (SS is less than 2.2V), It does not operate Timer Latch. 10. By STB voltage, BD9897FS are changed to 2 states. Therefore, do not input STB pin voltage between one state and the other state (0.8~2.0V). 11. The pin connected a connector need to connect to the resistor for electrical surge destruction. This IC is a monolithic IC which (as shown is Fig-1) has P+ substrate and between the various pins. A P-N junction is formed from this P layer of each pin. For example, the relation between each potential is as follows, ○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.) ○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.) Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin. 12.This IC is a monolithic IC which (as shown is Fig-1)has P+ substrate and between the various pins. A P-N junction is formed from this P layer of each pin. For example, the relation between each potential is as follows, ○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.) ○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.) Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin. Resistance (PinA) (PinB) C Transistor (NPN) B E GND P+ P N P substrate GND Parasitic diode N P+ P substrate GND Parasitic diode (PinB) (PinA) B Parasitic diode GND C N N N N B CC EE GND Other adjacent components Parasitic diode Fig-1 Simplified structure of a Bipolar IC REV. B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A
BD9897FS
1. 物料型号: - 产品名称:DC-AC Inverter Control IC - 型号:BD9897FS

2. 器件简介: - BD9897FS 是一款DC-AC逆变器控制IC,具有36V高耐压处理能力,支持全桥灯具电流和电压反馈控制,软启动功能,短路保护以及欠压锁定等特性。

3. 引脚分配: - PGND: FET驱动器的接地端 - LN2、HN2: NMOS FET驱动器 - SW2、BST2: HN2输出的低侧电压和自举输入 - CT_SYNC_IN、CT_SYNC_OUT: CT同步信号输入输出端 - SRT、RT、CT、BCT、BRT、DUTY、DUTY_OUT、STB、CP、FAIL、VREF、VS、IS、FB、SS、COMP2、COMP1、VCC、UVLO、REG、BST1、SW1、HN1、LN1: 这些引脚分别用于控制时序、电压反馈、软启动、欠压保护、参考电压输入、误差放大器输入输出、软启动控制、过压检测等。

4. 参数特性: - 供电电压:7.5~30.0V - BST电压:4.0~36.0V - BST-SW电压差:4.0~6.5V - CT振荡频率:60~180kHz - BCT振荡频率:0.05~1.00kHz

5. 功能详解: - BD9897FS支持多种工作模式,包括操作模式和待机模式,可通过待机引脚选择。支持PWM和DC输入控制的BURST模式,外部DC电压控制的输出线性控制等。

6. 应用信息: - 该IC适用于需要DC-AC逆变控制的场合,如全桥灯具控制。

7. 封装信息: - 封装类型为SSOP-A32。
BD9897FS 价格&库存

很抱歉,暂时无法提供与“BD9897FS”相匹配的价格&库存,您可以联系我们找货

免费人工找货