BD99954MWV-E2

1 to 4-Cell Li-Ion Battery Manager For Application Processors BD99954MWV, BD99954GW  General Description BD99954 is a Battery Management LSI for 1-4 cell Lithium-Ion secondary battery, and available in a 40pin 0.40 mm pitch 5.0 mm x 5.0 mm QFN package and small 41-ball 0.4mm pitch 2.6mm x 3.0mm Wafer-Level CSP package which is designed to meet high degree demands for space-constraint equipment such as Low profile Notebook PC, Tablets and other applications. BD99954 provides a Dual-source Battery Charger, two port BC1.2 detection and a Battery Monitor with several alarm(INT#, PROCHOT#) outputs   Features Dual-source Battery Charger                      High efficiency Step-Up/Down switching charger for 1-4 cell Li-Ion/Li-poly battery Two separate input sources for USB-VBUS and DC adapter. Two port BC1.2 detectors. JEITA compliant charging profile Programmable parameters for Preconditioning, Precharge current, and Fast-charge current Programmable charging voltage Programmable charge current Programmable Switching Frequency: 600kHz to 1.2MHz Support USB BCS 1.2, ACA, ID pin, OTG USB-VBUS Over Voltage Protection Over Voltage Battery Protection Battery Short Circuit Detection Power Path Management with charge pump gate driver Flexibility power path control Reverse Buck/Boost Option for USB/USB-PD Bias voltage output for the external thermistor PMON output PROCHOT# output Support Inhibit / Autonomous Charging Battery Learn Function Input Operating Range: 3.8V to 25V * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001  Voltage Measurement for Thermistor.  Bias voltage output for the external thermistor.  SMBus Interface (Clock up friendly I2C) for Host communication  Embedded OTPROM for initial settings  Packages Pitch W xD xH UQFN040V5050 0.4mm 5.0mm x 5.0mm x 1.0mm UCSP55M3C 6 x 7balls 0.4mm 2.6mm x 3.0mm x 0.62mm UQFN040V5050 UCSP55M3C  Applications      Ultrabook Notebook PC Ultra-mobile PC Tablet PC Structure Silicon Monolithic Integrated Circuit  Line up matrix Parts No. Package BD99954MWV UQFN040V5050 BD99954GW UCSP55M3C ** This product is not designed to protect against radioactive rays. 1/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW Contents Notation .................................................................................................................................................................... 3 Reference ................................................................................................................................................................. 3 1. 2. 3. 4. 5. 6. 7. 7.1. 7.2. 7.3. 7.4. 7.5. 7.6. 7.7. 7.8. 7.9. 8. 8.1. 8.2. 8.3. 8.4. 8.5. 8.6. 9. 10. 11. 12. 13. INTRODUCTION ................................................................................................................. 4 SIGNAL DESCRIPTION ...................................................................................................... 5 PIN CONFIGURATION ........................................................................................................ 6 ABSOLUTE MAXIMUM RATING ........................................................................................ 7 THERMAL RESISTANCE (NOTE 1) ........................................................................................ 7 RECOMMENDED OPERATING CONDITION ..................................................................... 7 FUNCTION DESCRIPTIONS............................................................................................... 8 Block Diagram ............................................................................................................................................ 8 External Characteristics for Battery Charger .......................................................................................... 9 DC Input & Over Voltage Protection (OVP) ............................................................................................10 USB Detection ........................................................................................................................................... 11 DC/DC Converter ......................................................................................................................................12 Charger ......................................................................................................................................................14 Reverse DC/DC Converter .......................................................................................................................16 12-bit ADC .................................................................................................................................................17 Power On ...................................................................................................................................................18 CONTROL SPECIFICATION ............................................................................................. 20 SMBus Communication ...........................................................................................................................20 SMBus Protocols ......................................................................................................................................20 Command Code ........................................................................................................................................22 Battery Charger Commands Description ...............................................................................................26 Extended Commands Description ..........................................................................................................29 Resister Default Value ............................................................................................................................ 115 I/O EQUIVALENT CIRCUIT DIAGRAM .......................................................................... 118 ORDERING INFORMATION ............................................................................................ 121 MARKING DIAGRAMS ................................................................................................... 121 PHYSICAL DIMENSION TAPE AND REEL INFORMATION .......................................... 122 OPERATIONAL NOTES .................................................................................................. 124 * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 2/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW Notation Category Notation Description Unit V Volt (Unit of voltage) A Ampere (Unit of current) Ω, Ohm Ohm (Unit of resistance) F Farad (Unit of capacitance) deg., degree degree Celsius (Unit of Temperature) Hz Hertz (Unit of frequency) s (lower case) second (Unit of time) Min minute (Unit of time) b, bit bit (Unit of digital data) B, byte 1 byte = 8 bits M, mega-, mebi- 220 = 1,048,576 (used with “bit” or “byte”) M, mega-, million- 106 (used with “Ω” or “Hz”) K, kilo-, kibi- 210 = 1,024 (used with “bit” or “byte”) k, kilo- 103 = 1,000 m, milli- 10-3 μ, micro- 10-6 n, nano- 10-9 p, pico- 10-12 xxh, xxH Hexadecimal number. “x”: any alphanumeric of 0 to 9 or A to F. Xxb Binary number; “b” may be omitted. “x”: a number, 0 or 1 “_” is used as a nibble (4-bit) delimiter. (e.g. “0011_0101b” = “35h”) Address #xxh Address in a hexadecimal number. “x”: any alphanumeric of 0 to 9 or A to F. Data bit[n] n-th single bit in the multi-bit data. bit[n:m] Bit range from bit[n] to bit[m]. “H”, High High level (over VIH or VOH) of logic signal. “L”, Low Low level (under VIL or VOL) of logic signal. “Z”, “Hi-Z” High impedance state of 3-state signal. Unit prefix Numeric value Signal level = 1,000,000 (used with “Ω” or “Hz”) Reference Name Reference Document Release Date Publisher I2C-bus “UM10204: I2C-bus specification and user manual Feb. 13, 2012 NXP Semiconductors SMBus System Management Bus (SMBus) Specification 3.0 Dec. 20, 2014 SBS-IF JEITA Profile “A Guide to the Safe Use of Secondary Lithium Ion Batteries in Notebook-type Personal Computers” Apr. 10, 2007 JEITA USB BC “Battery Charging Specification Revision 1.2” Dec. 7, 2010 USB.org Smart Battery Charger Smart Battery Charger Specification Revision 1.1 Dec. 11, 1998 SBS-IF USB 2.0 Universal Serial Bus Specification Revision 2.0 Jul. 26, 2013 USB.org USB 3.1 Universal Serial Bus Revision 3.1 Specification Rev. 1.0 Aug. 11, 2014 USB.org USB PD USB Power Delivery Specification Rev. 2.0 V1.0 Apr. 27, 2000 USB.org * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 Rev. 4” ** This product is not designed to protect against radioactive rays. 3/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 1. Introduction BD99954 is a Battery Manager IC for 1-4Cell Lithium-Ion / Lithium-Ion polymer secondary battery pack used in portable equipment such as Tablets, Ultra books or others. BD99954 includes a Battery Charger, two port BC1.2 detection, a Battery Monitor for voltage, current, temperature and alarm(INT#, PROCHOT#) Controller. Figure 1-1 shows the Typical Application Circuit. Q4 Q3 R1 C9 Q1 Q2 C1 VBUS C2 C8 C14 ACGATE2 USB USB ACGATE1 ACP C3 Q5 HG1 VBUS REGN C7 ACN BOOT1 VCC R17 Q6 L1 System LX1 D+ VBUS_DPI D- VBUS_DMI ID VBUS_ID D+ C5 R18 LG1 VCC_DPI D- VCC_DMI ID VCC_ID V3P3V R14 R13 R12 R11 BOOT2 R10 BD99954 VBUS_DPO R15 LG2 HG2 VBUS_DMO PHY C4 LX2 VCC_DPO R16 SRP VCC_DMO PROCHOT# IMVP C11 PMON SRN IOUT ACOK SDA C15 VREF VREF R5 R3 C6 GND R6 Battery C10 TSENSE IADP/RESET C17 R7 BATT INT# R9 Q7 C13 BGATE SCL EC R2 C12 Θ R4 C18 Figure 1-1 Block Diagram * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 4/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 2. Signal Description Table 2-1 Signal Description Pin No. 1 2 3 4 5 Ball No. [CSP] B2 A2 D3 A3 B3 Pin Name VBUS VCC ACOK INT# PROCHOT# 6 7 8 A4 A5 B4 ACN ACP ACGATE1 9 B5 ACGATE2 10 11 12 13 14 15 16 17 18 19 20 21 22 23 A6 B6 C4 C5 C6 D5 D6 D4 E6 F6 G6 E5 F5 G5 IADP/RESET VBUS_DMI VBUS_DPI VBUS_DMO VBUS_DPO VBUS_ID VCC_DMI VCC_DPI VCC_DMO VCC_DPO VCC_ID SCL SDA PMON 24 25 26 F4 G4 E3 IOUT VREF TSENSE 27 28 29 30 31 32 33 34 35 36 37 38 39 40 G3 F3 G2 G1 F2 F1 E2 E1 D2 D1 C1 C2 B1 A1 BATT BGATE SRN SRP GND HG2 LX2 BOOT2 LG2 LG1 BOOT1 LX1 HG1 REGN Function USB Power Supply DC Power Supply AC adapter voltage detection open drain output. Interrupt for I2C Active low open drain output of “processor hot” indicator. The charger IC monitors events like adapter current, battery discharge current. Once any event in PROCHOT# profile is triggered, a minimum 10ms pulse is asserted. Input current sense resistor negative input. Input current sense resistor positive input. Charge pump output to drive adapter input n-channel MOSFET s. The ACGATE1 voltage is 5V above VBUS during AC adapter insertion. Charge pump output to drive adapter input n-channel MOSFET s. The ACGATE2 voltage is 5V above VCC during AC adapter insertion. Default Input Current Limit Setting pin and System resistor reset pin. VBUS side USB D- Input / Output VBUS side USB D+ Input / Output VBUS side USB D- Output / Input VBUS side USB D+ Output / Input VBUS side USB ID pin input VCC side USB D- Input / Output VCC side USB D+ Input / Output VCC side USB D- Output / Input VCC side USB D+ Output / Input VCC side USB ID pin input SMBus Clock Input SMBus Data Input / Output Buffered total system power current output. Place a resistor between PMON pin and GND. Buffered adapter or charge current output selectable with SMBus command. 1.5V LDO Output Battery temperature monitor pin. Active low battery present input signal. LOW indicates battery is present, and HIGH indicates the battery is absent and the charging stop. Battery Voltage Input Gate Control Output Charge current sense resistor negative input. Charge current sense resistor positive input. Ground DC/DC Boost side High Side Gate Driver DC/DC Boost side Inductor Connection DC/DC Boost side Driver Voltage Output DC/DC Boost side Low Side Gate Driver DC/DC Buck side Low Side Gate Driver DC/DC Buck side Driver Voltage Output DC/DC Buck side Inductor Connection DC/DC Buck side High Side Gate Driver LDO Output * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 5/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 3. Pin Configuration 21 30 31 GND 20 VCC_ID HG2 VCC_DPO LX2 VCC_DMO BOOT2 VCC_DPI LG2 VCC_DMI LG1 VBUS_ID BOOT1 VBUS_DPO LX1 VBUS_DMO HG1 VBUS_DPI REGN 40 VBUS_DMI 11 1 10 Figure 3-1 Pin Configuration in BD99954MWV (Top View) G SRP SRN BATT VREF PMON VCC_ID F HG2 GND BGATE IOUT SDA VCC_DPO E BOOT2 LX2 TSENSE N/C SCL VCC_DMO D LG1 LG2 ACOK VCC_DPI VBUS_ID VCC_DMI C BOOT1 LX1 B HG1 VBUS A REGN VCC INT# 1 2 3 VBUS_DPI VBUS_DMO VBUS_DPO PROCHOT# ACGATE1 ACGATE2 VBUS_DMI ACN ACP IADP/RESET 4 5 6 Figure 3-2 Pin Configuration in BD99954GW (Bottom View) * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 6/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 4. Absolute Maximum Rating Value -0.3 to 28V -2 to 28V -0.3 to 32V VBUS, VCC, SRN, SRP, ACN, ACP, BATT LX1, LX2 ACGATE1, ACGATE2, BGATE, BOOT1, BOOT2, HG1, HG2 LX1-BOOT1,LX2-BOOT2 ACP-ACN, SRP-SRN VBUS_DPI, VBUS_DMI, VBUS_ID, VBUS_DPO, VBUS_DMO, VCC_DPI, VCC_DMI, VCC_ID, VCC_DPO, VCC_DMO, ACOK, REGN, INT#, PROCHOT#, IOUT, PMON, SCL, SDA, LG1, LG2 TSENSE, IADP/RESET, VREF Voltage range (with respect to GND) Junction temperature Storage temperature -0.3 to 6V -0.3 to 0.3 V -0.3 to 7.0 V -0.3 to 2.1 V 150℃ -50 to 150℃ 5. Thermal Resistance (Note 1) Parameter Symbol Thermal Resistance (Typ) Unit 1s(Note 4) 2s2p(Note5) 4s5p(Note7) 113.6 24.5 - °C/W °C/W W UQFN040V5050 Junction to Ambient θJA Junction to Top Characterization Parameter(Note 2) ΨJT 8 3 - θJA - - 0.97 UCSP55M3C Power Dissipation(Note3) (Note 1)Based on JESD51-2A(Still-Air) only BD99954MWV (Note 2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 3) Derate by 78.1mW/°C when operating above Ta=25°C (when mounted in ROHM’s standard board) (Note 4)Using a PCB board based on JESD51-3. Layer Number of Measurement Board Single Material Board Size FR-4 114.3mm x 76.2mm x 1.57mmt Top Copper Pattern Thickness Footprints and Traces 70μm (Note 5)Using a PCB board based on JESD51-5, 7. Layer Number of Measurement Board 4 Layers Thermal Via(Note6) Material Board Size FR-4 114.3mm x 76.2mm x 1.6mmt Top Pitch 1.20mm 2 Internal Layers Diameter Φ0.30mm Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70μm 74.2mm x 74.2mm 35μm 74.2mm x 74.2mm 70μm (Note 6) This thermal via connects with the copper pattern of all layers.. (Note 7)Using a PCB board Layer Number of Measurement Board 9 Layers Material Board Size FR-4 63mm x 55mm x 1.6mmt 6. Recommended Operating Condition VBUS VCC BATT IIN ISYS ICHARGE * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 MIN 3.8 3.8 0 - MAX 25 25 19.2 16 16 16 Unit V V V A A A ** This product is not designed to protect against radioactive rays. 7/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW Operating Temperature range -30 85 ℃ 7. Function Descriptions 7.1. Block Diagram VBUS _DPI VOVP_VCC VBUS _DMI VBU S_ID VCC_ DPI VCC_ DMI VCC_ ID VCC_ DMO VCC_ DPO VBUS _DMO VBUS _DPO VCC VUVLO_VCC Power Path Control Logic VOVP_BUS BC1.2 Detector ACOK Control Logic VBUS ACN VCC VBUS BATT VUVLO_BUS VOR BoS ACGATE2 ACGATE1 VCC Gate Charge Pump VOR REGN ACP HG1 VREF_ADP Buck DRIVE R PWM Control Logic VREF_SYS Slope SRP VFB_CHG xA SRN HG2 Control Logic VREF_CHG VREF_BAT 1.5V LDO IADP/RESET VREF VCC VBUS VFB_ADP VFB_CHG SRN BATT MUX LX2 LG2 BGATE PROCHOT# VREF INT# ADC Control Logic TSENSE SDA BGATE Charge Pump VREF_TRC REGN LX1 LG1 BOOT2 Boost DRIVE R BATT SCL BOOT1 VFB_ADP xA ACN VREF REGN 5V LDO REGN VBUS Gate Charge Pump REGN PWM Control Logic Power Path Control Logic DAC SMBUS I/F DAC IOUT PMON GND Figure 7-1 Block diagram * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 8/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 7.2. External Characteristics for Battery Charger Item Adapter=18.0V, Battery=7.4V, LX1=LX2=0.0V, GND=0V, Ta=25℃ (unless otherwise noted.) Value Symbol Unit Condition Min. Typ. Max. Adapter Standby Current 1 IADP1 - 1.0 1.5 mA Adapter Operating Current 2 IADP2 - 4.0 8.0 mA Battery Standby Current (VBUS=VCC=0.0V) IBATT1 - 50.0 100.0 μA Battery Standby Current (VBUS=VCC=0.0V) IBATT2 - 25.0 50.0 μA Battery Standby Current (VBUS=VCC=0.0V) IBATT3 - 125 200 μA Battery Standby Current (VBUS=VCC=0.0V) IBATT4 - 150 290 μA Battery Current (VBUS=VCC=0.0V) IBATT5 - 700 900 μA FSMB VREGN VREGN_LD VREGN_UVL 10 5.0 10 5.2 - 400 5.4 - kHz V mA 2.375 2.5 2.625 V Detecting REGN falling edge 50 100 200 mV Detecting REGN rising edge 1.455 1.35 1.5 1.40 1.55 1.45 V V IVREF=1mA Detecting VREF rising edge 25 50 100 mV Detecting VREF falling edge IPMON IPMONMAX -5 - 16 8 4 2 1 0.5 0.25 - +5 200 μA/W μA/W μA/W μA/W μA/W μA/W μA/W % μA GIADP VIOUT1 VIOUT2 VIOUT3 VIOUT4 VIOUT5 VIOUT6 GIDCHG VIDCHG1 VIDCHG2 VIDCHG3 VIDCHG4 802.8 393.2 174.1 81.92 622.6 298.2 122.9 41 20 819.2 409.6 204.8 102.4 51.2 25.6 16 655.4 327.7 163.8 81.9 835.6 426 235.5 122.9 688.2 357.2 204.8 122.9 V/V mV mV mV mV mV mV V/V mV mV mV mV SMBus Operation Frequency REGN Output Voltage REGN External output current REGN UVLO Voltage REGN UVLO Hysteresis Range LDO Output Voltage VREF UVLO release Voltage VREF UVLO Hysteresis Range O VREGN_UVL O VREF VREF_UVLO VREF_UVLO_ hys Charge Pump ON Charge Pump ON Not Switching BGATE Charge Pump ON REG0x7Ch[2:0]=5h BGATE Charge Pump OFF Deep Sleep mode REG0x7Ch[2:0]=6h SDA=SCL=0V BGATE Charge Pump ON PROCHOT only VSYS [1msec/S] REG0x7Ch[2:0]=2h BGATE Charge Pump ON PROCHOT only VSYS [250μsec/S] REG0x7Ch[2:0]=1h BGATE Charge Pump ON with PROCHOT Monitored System voltage and Battery current REG0x7Ch[2:0]=0h Power Monitor Amplifier Gain (IPMON)/(VACP×IACP + VBAT×IBAT ) PMON Maximum Current GPMON REG0x25h[2:0]=6h 6.25W Setting REG0x25h[2:0]=5h 12.5W Setting REG0x25h[2:0]=4h 25W Setting REG0x25h[2:0]=3h 50W Setting REG0x25h[2:0]=2h 100W Setting REG0x25h[2:0]=1h 200W Setting REG0x25h[2:0]=0h 400W Setting IPMON=50uA IADP Voltage Accuracy IDCHG Voltage Accuracy * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 (VIADP)/(VACP- VACN) (VACP- VACN)=40.96mV (VACP- VACN)=20.48mV (VACP- VACN)=10.24mV (VACP- VACN)=5.12mV (VACP- VACN)=2.56mV (VACP- VACN)=1.28mV (VIDCHG)/(VSRN- VSRP) (VSRN- VSRP)=40.96mV (VSRN- VSRP)=20.48mV (VSRN- VSRP)=10.24mV (VSRN- VSRP)=5.12mV Note: Resister address refer to extended commands ** This product is not designed to protect against radioactive rays. 9/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 7.3. DC Input & Over Voltage Protection (OVP) 7.3.1. Outline     Dual-input for the battery charger source: USB VBUS and VCC 25V over voltage protection. One of two DC input selection (exclusive) Effective input is selected by the control registers, VCC as default. 7.3.2. Electrical Characteristics Item VCC Input Operating Range VCC UVLO Release Voltage VCC UVLO Hysteresis Range VCC OVP Detection Voltage VCC OVP Hysteresis Range USB Input Operating Range VBUS_UVLO Release Voltage VBUS UVLO Hysteresis Range VBUS OVP Detection Voltage VBUS OVP Hysteresis Range VACOK Output “L” Voltage VACOK Leakage Current VBUS Reverse Output turn-on Time Voltage Output down-off Time Adapter=18.0V, Battery=7.4V, LX1=LX2=0.0V, GND=0V, Ta=25℃ (unless otherwise noted.) Value Symbol Unit Condition Min. Typ. Max. VCCRNG VCC_UVLO VCC_UVLO_hy s VCC_OVP VCC_OVP_hys VUSBRNG VBUS_UVLO VBUS_UVLO_h ys VBUS_OVP VBUS_OVP_hy s VOK_ON IOKL TVBUS_ON TVBUS_OFF * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 3.8 3.7 3.8 25 3.9 V V VCC rising 80 130 180 mV VCC falling 25.0 100 3.8 3.7 25.5 150 3.8 26.0 200 25 3.9 V mV V V VCC rising VCC falling 80 130 180 mV VBUS falling 25.0 25.5 26 V VBUS rising 100 150 200 mV VBUS falling - 5 1 1.0 1 10 5 V µA msec μsec VBUS rising I(VACOK) =1mA VACOK = 5V ** This product is not designed to protect against radioactive rays. 10/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 7.4. USB Detection 7.4.1. Outline    USB Charger port detection and USB ID Supports USB BC 1.2, USB ACA, USB ID pin, USB OTG, and PD plug detection. Integrated analog switch supports USB HS (480Mbps). 7.4.2. Electrical Characteristics Table 7-1 Electrical Characteristics for USB Detection (Ta=25C, BATT=3.6V, VBUS=5.0V) Item Symbol Specification Min. Typ. Max. Unit Condition VDP_SRC voltage (output voltage for D+) VDM_SRC voltage (output voltage for D-) RCD resistance (D+ pull up resistance) USB port un-detection resistance (Host D+ pull down resistance) VDAT_REF voltage (D+/D- detection voltage) VLGC voltage (D+/D- detection voltage) D+ sink current D- sink current VDP_SRC 0.5 0.6 0.7 V Io=0 to 200uA VDM_SRC 0.5 0.6 0.7 V Io=0 to 200uA RCD 75 100 125 kΩ RHDP 100 - - kΩ VDAT_RE F 0.3 0.35 0.4 V HDPR/HDML voltage rising VLGC 1.2 1.4 1.6 V HDPR/HDML voltage rising IDP_SINK IDM_SINK 50 50 85 85 150 150 A A V(HDPR) = 0.6V V(HDML) = 0.6V - 5 10 Ω VIN=3.3V or 0V -3 - 3 μA - 6 - 1 pF ms Switch on-state resistance Switch off-state leakage current Switch capacitance USB Switch start-up time RON_US BSW IIOFF_U SB CSW TUPUSB VIN=3.3V or 0V VBUS=OPEN USBSW ON USBSW OFF→ON (Ta=25C, VBAT=3.6V, VBUS=5.0V) Item Symbol Specification Min. Typ. Max. RIDopen RID1 RID2 RID3 RID4 RID5 RID6 RID7 RID8 RID9 RID10 RID11 RID12 RID13 RID14 1000 - 797 557 440 390 287 200 180 124 102 68 47 36.5 1 0 50 kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ kΩ Ω RatioH 85 90 95 % Unit Condition Pull-down detection resistance COMPH detection voltage ratio USB ID removal detection GND level detection Ratio = 100xV(ID)/VCCIN [%] ID port voltage rising Note: The pull-down resistance is designed in 5 % accuracy to comply with the standard of MCPC (Mobile Computing Promotion Consortium), except the 1kΩ resistor for RID_GND. The RID_GND resistance complies with the MHL (Mobile High-definition Link) standard in 20 % accuracy. * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 11/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 7.5. DC/DC Converter 7.5.1. - Outline     Input Current Limit value setting: 96 mA to 16352 mA for VBUS and VCC Charger supply voltage anti-collapse control. Low power mode support Include thermal protection and shutdown 7.5.2. Electrical Characteristics Table 7-2 Item Electrical Characteristics for DC/DC Converter Adapter=18.0V, Battery=7.4V, LX1=LX2=0.0V, GND=0V, Ta=25℃ (unless otherwise noted.) Value Symbol Unit Condition Min. Typ. Max. USB 500mA Current Accuracy USB 900mA Current Accuracy BC1.2 1500mA Current Accuracy USB-PD 3A Current Accuracy USB-PD 5A Current Accuracy Input Current Setting Range Charge Current Setting LSB Input Current Accuracy (10mΩ current sense resistor) IADP/RESET pin input Voltage range IADP/RESET pin Current setting Range IADP/RESET pin Current setting step RESET Detection Voltage RESET release Voltage RESET Detection duration time IUSB500 IUSB900 IUSB1500 IUSB3000 IUSB5000 IADPRNG IADPLSB IADP1 IADP2 IADP3 IADP4 VADPTRNG 398 764 1380 2824 4792 96 -2% -3% -5% -10% 0.1 448 832 1440 2912 4896 32 4096 2048 1024 512 - 500 900 1500 3000 5000 16352 +2% +3% +5% +10% 1.4 mA mA mA mA mA mA mA mA mA mA mA V IADPTRNG IADPSTEP Vreset_d et Vreset_re l TRESET REG0x07h/08h=01C0h REG0x07h/08h=0340h REG0x07h/08h=05A0h REG0x07h/08h=0B60h REG0x07h/08h=1320h 128 - 5120 mA - 512 - mA - - 0.22 V IADP/RESET voltage falling 0.44 - - V IADP/RESET voltage rising 100 - - μsec REG0x07h or REG0x08h Minimum System Voltage Setting Range Minimum System Voltage Setting LSB Minimum System Voltage accuracy VMSVRNG 2.560 - 19.2 V VMSVLSB VMSV1 VMSV2 VMSV3 VMSV4 -2.0% -1.0% -2.0% -2.0% 64 3.072 6.144 9.216 12.288 +2.0% +1.0% +2.0% +2.0% mV V V V V Vanti_VBUS 3.84 - 25.0 V -100 - +100 mV 3.84 - 25.0 V -100 - +100 mV FOSC1 FOSC2 FOSC3 FOSC4 510 770 850 1020 600 860 1000 1200 690 950 1150 1380 kHz kHz kHz kHz RHDRV1P RHDRV1N RLDRV1P RLDRV1N RHDRV2P RHDRV2N RLDRV2P RLDRV2N - 6.0 0.7 7.5 0.9 6.0 0.7 7.5 0.9 10.0 1.3 12.0 1.4 10.0 1.3 12.0 1.4 VSYSREG_SET=2,560 ~ 19,200mV, 64mV steps. REG0x11h=0C00h REG0x11h=1800h REG0x11h=2400h REG0x11h=3000h VBUS Anti-Collapse Threshold Voltage Range Anti-Collapse Threshold Voltage Accuracy VCC Anti-Collapse Threshold Voltage Range Anti-Collapse Threshold Voltage Accuracy Vanti_VBUS_a cc Vanti_VCC Vanti_VCC_ac c REG0x0Dh REG0x0Eh Switching Frequency 1 Switching Frequency 2 Switching Frequency 3 Switching Frequency 4 REG0x0Ch[3:2]=00b REG0x0Ch[3:2]=01b REG0x0Ch[3:2]=10b REG0x0Ch[3:2]=11b HRDV1 PMOS RON HRDV1 NMOS RON LRDV1 PMOS RON LRDV1 NMOS RON HRDV2 PMOS RON HRDV2 NMOS RON LRDV2 PMOS RON LRDV2 NMOS RON * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 Ω Ω Ω Ω Ω Ω Ω Ω Note: Resister address refer to extended commands ** This product is not designed to protect against radioactive rays. 12/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 7.5.3.    Detailed IADP input current limit settings Input Current limit is set by external IADP/RESET pin. This function is enabled by VM_CTRL_SET.EXTIADPEN bit =1. Once the charger reset is released when this function is enabled, the corresponding input current value which depends on the IADP/RESET voltage will be stored to the SEL_ILIM_VAL register. And this is used as the input current limit. It can be overwritten through SMBus. Table 7-3 IADP pin Input Current Limit settings 5632 1.37V 5120 Input Current Limit Value (mA) 4608 4096 3584 3072 2560 512mA/90mV 2048 1536 1024 0.44V 512 0 RESET 0 0.2 0.56V 0.4 * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 0.6 0.8 VIADP/RESET (V) 1 1.2 1.4 ** This product is not designed to protect against radioactive rays. 13/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 7.6. Charger 7.6.1. - Outline      Supports battery insertion and removal detection. Controls the VSYS output voltage with a deeply discharged battery. JEITA compliant Battery Charging Profile with thermal control of the charging current and voltage settings by measuring the temperature from the external thermistor Supports battery supplement mode Automatic or manual control of the Watch Dog Timer (via software) while Pre–charging and Fast-charging 7.6.2. Electrical Characteristics Table 7-4 Item Electrical Characteristics for Charger Adapter=18.0V, Battery=7.4V, LX1=LX2=0.0V, GND=0V, Ta=25℃ (unless otherwise noted.) Value Symbol Unit Condition Min. Typ. Max. Battery Input Operating Range1 Battery Input Operating Range1 VBATRNG VBATRNG 0.0 2.5 - 19.2 19.2 V V With Adapter Input Without Adapter Input VCVRNG VCVLSB VCV1S VCV2S VCV3S VCV4S VOVPRNG 2.560 -0.5% -0.5% -0.5% -0.5% 2.56 16 4.192 8.400 12.592 16.800 - 19.200 +0.5% +0.5% +0.5% +0.5% 19.2 V mV V V V V V ICHGRNG ICHGLSB ICHG1 ICHG2 ICHG3 ICHG4 ICHG5 ITRCCHGRNG ITRCCHGLSB 0 -2% -3% -5% -20% -40% 0 - 64 4096 2048 1024 256 128 256 64 16384 +2% +3% +5% +20% +40% 1024 - mA mA mA mA mA mA mA mA mA ICHG6 - 1024 - mA REG0x14h or REG0x15h VTH_HOT1 VTH_HOT2 VTH_HOT3 - 45 50 58 - °C °C °C OTP Programmable REG0x45h OTP Programmable REG0x44h OTP Programmable REG0x43h VTH_COLD1 - 10 - °C OTP Programmable REG0x42h VTH_COLD2 - 2 - °C OTP Programmable REG0x41h Tbat -2 - +2 °C VTH_OPN - VREF*0.9 5 - V IBATSHORT TBATSHORT 0 4 - 25,000 1020 mA msec TPRE TFAST THTPRO TTOPOFF 13.0 196 108 13 14.5 218 120 15 16 240 132 17 Charge Voltage Setting Range Charge Voltage Setting LSB Charge Voltage accuracy VBAT OVP Detection range REG0x1A, REG0x1Bh or REG0x1Ch REG0x1Ah/0x1Bh/0x1Ch=1060h REG0x1Ah/0x1Bh/0x1Ch=20D0h REG0x1Ah/0x1Bh/0x1Ch=3130h REG0x1Ah/0x1Bh/0x1Ch=41A0h REG0x1Dh Charge Current Setting Range Charge Current Setting LSB Charge Current accuracy (10mΩ current sense resistor, BATT > Minimum System Voltage) Trickle Charge Current Setting Range Trickle Charge Current Setting LSB Maximum Trickle Charge Current (10mΩ current sense resistor, BATT < Minimum System Voltage) REG0x16h REG0x16h=1000h REG0x16h=0800h REG0x16h=0400h REG0x16h=0100h REG0x16h=0080h REG0x14h or REG0x15h Battery Temperature Threshold HOT1 Battery Temperature Threshold HOT2 Battery Temperature Threshold HOT3 Battery Temperature Threshold COLD1 Battery Temperature Threshold COLD2 Battery Temperature Measurement Acc Battery Open Detection Voltage Battery Short Current Detection Battery Short Current Duration time REG0x1Fh REG0x10h[15:8] Pre Charging Time Fast Charging Time High Temperature Protection Time Charging Termination Delay Time * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 min min min Over 58°C sec Note: Resister address refer to extended commands ** This product is not designed to protect against radioactive rays. 14/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 7.6.3. Battery Charging Profile Figure 7-5 Battery Charging Profile VBAT VSYS IBAT VBAT x 1.15 VFASTCHG_R EG_SET1,2,3 ICHG_SET System Voltage Charge Current VSYSREG_SET Ichg x Rds VPRECHG_TH _SET Battery Voltage IPRECH_SET ITERM_SET ITRICH_SET Time (CC) TRICKLE CHARGE PRE CHARGE (CV) FAST CHARGE (BGATE ON) Done (BGATE OFF) The charging current is controlled by the battery temperature measured from the external thermistor. In the low-temperature condition, the charging current is reduced to a half of the setting value (ICHG_SET). Charging Current ICHG_SET ICHG_SET/2 0 T1 T2 T4 Temperature of Battery Pack The charging voltage is also reduced by the temperature as set by the control registers, VFASTCHG_REG_SET1/2/3. Charging Voltage VFASTCHG _REG_SET1 VFASTCHG _REG_SET2 VFASTCHG _REG_SET3 0 T1 T2 T3 T5 T4 Temperature of Battery Pack * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 15/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 7.7. Reverse DC/DC Converter 7.7.1. Outline  Charger provides a voltage output (Reverse Buck/Boost) via VBUS or/and VCC when an USB OTG device is connected. 7.7.2. Electrical Characteristics Table 7-6 Electrical Characteristics for Reverse Buck/Boost Adapter=18.0V, Battery=7.4V, LX1=LX2=0.0V, GND=0V, Ta=25℃ (unless otherwise noted.) Value Symbol Unit Condition Min. Typ. Max. Item Output Current Limit Setting Range Output Current Limit Setting LSB Output Current Limit Accuracy (10mΩ current sense resistor) IRADPRNG IRADPLSB IRADP1 IRADP2 IRADP3 IRADP4 0 -2% -3% -5% -10% 4096 32 4096 2048 1024 512 8128 +2% +3% +5% +10% mA mA mA mA mA mA VROUT1 VROUT2 VROUT3 VROUT4 VROUT5 VROUTRNG VROUTLSB 4.95 5.15 8.91 11.88 19.8 4.032 - 5.05 5.25 9.09 12.12 20.2 22.016 - V V V V V V mV VRscp - - V VRovp - - V VRovp_hy s - 5.0 5.2 9.0 12.0 20.0 64 VBUS_ UVLO VCC_U VLO VROUT x 1.1 VROUT x 1.05 - mV REG0x09h REG0x09h=1000h REG0x09h=0800h REG0x09h=0400h REG0x09h=0200h Output Voltage Setting 1 Output Voltage Setting 2 Output Voltage Setting 3 Output Voltage Setting 4 Output Voltage Setting 5 Output Voltage Setting Range Output Voltage Setting LSB VBUS Buck/Boost Circuit Protection. Output Short VBUS Buck/Boost OVP Voltage VBUS Buck/Boost OVP Detection Hysteresis Range REG0x19h=1380h REG0x19h=1440h REG0x19h=2340h REG0x19h=2F00h REG0x19h=4E40h REG0x19h Note: Resister address refer to extended commands * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 16/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 7.8. 12-bit ADC 7.8.1. Outline        12-bit Successive Approximation Register A/D Converter Input Voltage range: 2.0 to 19.2V (BATT) Input Voltage range: 2.0 to 25V (VBUS, VCC, ACP, SRP) Input Voltage range: 0.1 to 1.4V (TSENSE) Input Voltage range: 0.1 to 1.4V (IADP/RESET) Current monitor range: 0.3 to 16.384A (IACP) Current monitor range: 0.3 to 25A (IBAT) 7.8.2. Electrical Characteristics Table 7-7 Parameter Electrical Characteristics for 12-bit SAR-ADC Symbol Min (Unless otherwise specified, Ta=25C, VREF=1.5V) Specification Unit Condition Typ Max RES - - 12 bit TCONV - 20 - µs Gain Error 1 Gerr1 −1.1 - +1.1 % Gain Error 2 Gerr2 −1.1 - +1.1 % Gain Error 3 Gerr3 −1.1 - +1.1 % VOffset error Voffset -110 110 mV IOffset error Ioffset -110 110 mA Resolution Conversion Period - BATT,VBUS,VCC,ACP, SRP=5V and 15V TSENSE,IADP/RESET =0.5V and 1.0V IACP,IBAT=1.5A and 8A 7.8.3. Functions SAR-ADC measures the 10 following factors by time sharing. These factors can be disabled by SMBus command. The actual value and the 2-sample moving average value are read by SMBus command. # Factor Conversion Period Conversion Interval 1 VBUS or VCC 20us VBUS 400us VCC 400us 2 IACP 20us 200us 3 VACP 20us 200us 4 IBAT(+) 20us 200us 5 IBAT(-) 20us 200us 6 VBATT 20us 200us 7 IACP 20us 200us 8 VSRP 20us 200us 9 IADP/RESET or TSENSE 20us IADP/RESET 200us TSENSE 1s 10 IBAT(-) 20us 200us VBUS or VCC 20us 20us IACP 20us VACP 20us IBAT(+) 20us IBAT(-) 20us VBATT 20us IACP 20us VSRP 20us IADP/RESET or TSENSE 20us IBAT(-) The power calculation of PMON is carried out from IACP, VACP, IBAT, VBATT. PACP = IACP * VACP PBAT = IBAT * VBATT PMON = PACP + PBATT PMON power change can be observed when the value is stable longer than the “Conversion Interval”, 200us. * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 17/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 7.9. Power On Whenever BD99954 receives power from the adapter or battery, BD99954 wakes up and starts loading data from the OTP. After OTP loading is completed, BD99954 is in standby position. 7.9.1. VBAT power on and VBUS/VCC plugged-in At the first VBAT power on, BD99954 starts OTP loading. And when VBUS or VCC is eventually plugged in, BD99954sserts ACOK and starts the BC1.2 Detection sequence. After the BC1.2 Detection is completed, BD99954 limits the input current, reflects the BC1.2 setting and starts charging. 7.9.2. VBUS/VCC plugged-off When VBUS plugged off, BD99954 deasserts AC_OK and limits input current as IADP external pin or minimum setting (it is programmable). And then VBUS or VCC plugged in again, BD99954sserts AC_OK and starts BC1.2 detection. * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 18/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 7.9.3. VBUS and VCC plugged in When VBUS plugged in and then VCC plugged in, BD99954 selects VBUS or VCC with priority setting. If VCC is 1st priority (programmable), BD99954 changes power source from VBUS to VCC. If VBUS is 1st priority BD99954 keeps power source VBUS. Each case AC_OK keeps “H”. VBAT VBUS VCC VBUS_UVLO VCC_UVLO VREF VREF_UVLO AC_OK Keep "H" when VCC pluged in because already VBUS pluged in. OSC Stable OTP Load Loaded. Charger Reset DCDC Control DCDC start up VBUS BC1.2 Detection Detected VCC BC1.2 Detection Initial Input Current Limit VBUS Input Current Limit Input Current Limit with Peak Control Deadbattery Comparator Deasserted ( VBAT is OK ) * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 Detecting or Waiting Detected or Waited Resistor or Minimum Change to VCC Input Current Limit with Peak Control BC1.2 Setting with Peak Control Register Setting ▲EC Write by SMBus. with Peak Control ** This product is not designed to protect against radioactive rays. 19/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 8. Control Specification BD99954 has several control registers to set configurations or to sense the hardware status for the internal function operations. Host is able to write to or read from the control registers via SMBus (friendly I2C). 8.1. SMBus Communication BD99954 operates in slave mode on the SMBus and supports Layer 2 communication protocol. 8.1.1. SMBus Slave Address Slave Address for the BD99954 is 0001_001. The register address is set by “Slave Address”. The “Slave Address” is also used as the start address of contiguous addressing for multiple write or read access. 8.2. SMBus Protocols The following is a description of the various SMBus protocols. BD99954 supports the protocols defined in this section. BD99954 does not support all the protocols defined in the SMBus Specification. The results returned by such a device to a protocol it does not support is undefined. Below is a key to the protocol diagrams in this section. Not all protocol elements will be presented in every command. For instance, not all packets are required to include the packet error code. S Sr Rd Wr x A N P PEC Start Condition Repeated Start Condition Read (bit value of 1) Write (bit value of 0) Shown under a field indicates that that field is required to have the value of ‘x’ Acknowledge (this bit position may be‘0’ for an ACK) Acknowledge (this bit position may be‘1’ for a NACK) Stop Condition Packet Error Code Master (SMBus Host) to Slave Slave (SMBus Device) to Master BD99954 supports following protocols.  Write Word  Read Word 8.2.1. Write Word The first byte of a Write Word access is the command code. The next are the high data byte and low data byte to be written. In this example the master asserts the slave device address followed by the write bit. The device acknowledges and the master delivers the command code. The slave again acknowledges before the master sends the data bytes. The slave acknowledges each byte, and the entire transaction is finished with a STOP condition. BD99954 does not support PEC. 1 S 7 Slave Address 1 1 W A r 8 Command Code * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 1 8 A Data Low Byte 1 A 8 Data High Byte 1 1 A P SMBus Write Word ** This product is not designed to protect against radioactive rays. 20/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 8.2.2. Read Word Reading data is slightly more complicated than writing data. First the host must write a command to the slave device. Then it must follow that command with a repeated START condition to denote a read from that device’s address. The slave then returns one high and low byte of data. Note that there is no STOP condition before the repeated START condition, and that a NACK signifies the end of the read transfer. BD99954 does not support PEC. 1 S 1 Sr 7 Slave Address 7 Slave Address 1 1 8 WA r Command Code 1 1 R A d 8 Data Low Byte 1 A 1 8 1 1 A Data High Byte N P SMBus Read Word 8.2.3. SMBus Communication Timing Waveforms and Timing Specification Table 8-1 Parameter Electrical Characteristics for SMBus Timing Specification (Unless otherwise specified, Ta=25C, VREF=1.5V) Specification Symbol Unit Condition Min Typ Max SMBus Frequency FSMBus 10 - 400 kHz SDA/SCL Input Low Voltage VINL 0.0 - 0.8 V SDA/SCL Input High Voltage VINH 2.1 - 5.5 V SDA Hold Time from SCL TH(DAT) 250 - - ns SDA Setup Time from SCL TSU(DAT) 300 - - ns Start Condition Hold Time from SCL TH(STA) 4 - - µs Start Condition Setup Time from SCL TSU(STA) 4.7 - - µs Stop Condition Setup Time from SCL TSU(STOP) 4 - - µs TBUF 4.7 - - µs Bus Free Time * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 21/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 8.3. Command Code BD99954 has 3 command maps, "Battery Charger Commands", "Extended Commands" and "Debug Commands". All commands are addressed within 00h ~ 7Fh address area. And 80h ~ FFh address is a mirror of 00h ~ 7Fh. "Battery Charger Commands" is a subset of "Smart Battery Charger Specification Revision 1.1." "Extended Commands" is for charger function enhancement. "Debug Commands" are used for debug purpose or in production test. These are selectable by MAP_SET command. PROTECT_SET : 16'h0000 MAP_SET : 16'h0000 PROTECT_SET : 16'h0000 MAP_SET : 16'h0001 Battery Charger Commands Subset of “Smart Battery Charger Spec. Rev. 1.1” Extended Commands For charger function enhancement. - PMON, IOUT - PROCHOT - Power Path Management - USB BC1.2 Detection - Thermal Charging Profile - etc. PROTECT_SET : **** MAP_SET : **** Debug Commands For debug and production test. 8.3.1. Battery Charger Commands Following is a table of "Battery Charger Commands" which BD99954 supports. "Battery Charger Commands" is subset of "Smart Battery Charger Specification Revision 1.1." Note: Reserved command should not be accessed. If accessed, operation is not guaranteed. Code Command Protocols Byte Description Size 14h ChargingCurrent Read/Write 2 The Battery, System Host or other master device sends the desired charging Word rate (mA). This command is a mirror of ICHG_SET command of the extended command. 15h ChargingVoltage Read/Write 2 The Battery, System Host or other master device sends the desired charging Word voltage to the Smart Battery Charger (mV). This command is a mirror of VFASTCHG_REG_SET1 command of the extended command. 3Ch IBUS_LIM_SET Read/Write 2 VBUS Input Current Limit Setting. Word This command is a mirror of IBUS_LIM_SET command of the extended command. 3Dh ICC_LIM_SET Read/Write 2 VCC Input Current Limit Setting. Word This command is a mirror of ICC_LIM_SET command of the extended command. 3Eh PROTECT_SET Read/Write 2 Access Un-protect Setting for Address 3Fh Word This command is a mirror of PROTECT_SET command of the extended command. 3Fh MAP_SET Read/Write 2 Change Command Code Map. Word This command is a mirror of MAP_SET command of the extended command. * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 22/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 8.3.2. Extended Commands Following is a table of "Extended Commands" which BD99954 supports. "Extended Commands" is for charger function enhancement. Note: Reserved command should not be accessed. If accessed, operation is not guaranteed. Code Command Protocols 00h 01h 02h 03h 04h 05h 06h 07h 08h 09h 0Ah 0Bh 0Ch 0Dh 0Eh 0Fh 10h 11h 12h 13h 14h 15h 16h 17h 18h 19h 1Ah 1Bh 1Ch 1Dh 1Eh 1Fh 20h 21h 22h 23h 24h 25h 26h 27h 28h 29h 2Ah 2Bh CHGSTM_STATUS VBAT/VSYS_STATUS VBUS/VCC_STATUS CHGOP_STATUS WDT_STATUS CUR_ILIM_VAL SEL_ILIM_VAL IBUS_LIM_SET ICC_LIM_SET IOTG_LIM_SET VIN_CTRL_SET CHGOP_SET1 CHGOP_SET2 VBUSCLPS_TH_SET VCCCLPS_TH_SET CHGWDT_SET BATTWDT_SET VSYSREG_SET VSYSVAL_THH_SET VSYSVAL_THL_SET ITRICH_SET IPRECH_SET ICHG_SET ITERM_SET VPRECHG_TH_SET VRBOOST_SET VFASTCHG_REG_SET1 VFASTCHG_REG_SET2 VFASTCHG_REG_SET3 VRECHG_SET VBATOVP_SET IBATSHORT_SET PROCHOT_CTRL_SET PROCHOT_ICRIT_SET PROCHOT_INORM_SET PROCHOT_IDCHG_SET PROCHOT_VSYS_SET PMON_IOUT_CTRL_SET PMON_DACIN_VAL IOUT_DACIN_VAL VCC_UCD_SET VCC_UCD_STATUS VCC_IDD_STATUS VCC_UCD_FCTRL_SET Read Word Read Word Read Word Read Word Read Word Read Word Read Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read Word Read Word Read/Write Word Read Word Read Word Read/Write Word Byte Size 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2Ch VCC_UCD_FCTRL_EN Read/Write Word 2 2Dh 2Eh 2Fh 30h 31h 32h 33h (reserved) (reserved) (reserved) VBUS_UCD_SET VBUS_UCD_STATUS VBUS_IDD_STATUS VBUS_UCD_FCTRL_SET Read/Write Word Read Word Read Word Read/Write Word 2 2 2 2 * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 Description Charger State Machine Status VBAT and VSYS Status VBUS and VCC Status Charger Operation Status Charger WDT and Thermal WDT Status Actual Input Current Limit Selected Input Current Limit VBUS Input Current Limit Setting VCC Input Current Limit Setting OTG Output Current Limit Setting VBUS and VCC Control Setting Charger Operation Control Setting 1 Charger Operation Control Setting 2 VBUS Collapse Detect Threshold Voltage Setting VCC Collapse Detect Threshold Voltage Setting Charger WDT Setting Battery temperature and Battery short current WDT Setting VSYS Regulation Setting VSYS Valid Threshold High Setting (Hysteresis) VSYS Valid Threshold Low Setting (Hysteresis) Trickle-charge Current Setting Pre-charge Current Setting Fast-charge Current Setting Charge Termination Current Setting Pre-charge Voltage Threshold Setting Reverse Buck Boost Voltage Setting Fast Charge Voltage Regulation Setting 1 Fast Charge Voltage Regulation Setting 2 (Hot 1) Fast Charge Voltage Regulation Setting 3 (Hot 2) Re-charge Battery Voltage Setting Battery Over Voltage Protection Setting Battery Short Current Protection Setting PROCHOT# pin Control Setting Peak Input Current Threshold Setting for PROCHOT# Average Input Current Threshold Setting for PROCHOT# Dis-charge Current Threshold Setting for PROCHOT# VSYS Voltage Threshold Setting for PROCHOT# PMON and IOUT Output Control Setting PMON DAC Input Value IOUT DAC Input Value BC1.2 Charger Detector on the VCC side Setting BC1.2 Charger Detect Status on the VCC side ID Detect Status on the VCC side BC1.2 Charger Detector on the VCC side Manual Control Setting BC1.2 Charger Detector on the VCC side Manual Control Enable BC1.2 Charger Detector on the VBUS side Setting BC1.2 Charger Detect Status on the VBUS side ID Detect Status BC1.2 Charger Detector on the VBUS side Manual Control Setting ** This product is not designed to protect against radioactive rays. 23/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW Code Command Protocols 34h VBUS_UCD_FCTRL_EN Read/Write Word Byte Size 2 35h 36h 37h 38h 39h 3Ah (reserved) (reserved) (reserved) CHIP_ID CHIP_REV IC_SET1 Read Word Read Word Read/Write Word 2 2 2 2 3Bh 3Ch 3Dh 3Eh 3Fh IC_SET2 SYSTEM_STATUS SYSTEM_CTRL_SET PROTECT_SET MAP_SET Read/Write Word Read Word Read/Write Word Read/Write Word Read/Write Word 2 2 2 2 2 40h 41h 42h 43h 44h 45h 46h 47h 48h 49h 4Ah VM_CTRL_SET THERM_WINDOW_SET1 THERM_WINDOW_SET2 THERM_WINDOW_SET3 THERM_WINDOW_SET4 THERM_WINDOW_SET5 IBATP_TH_SET IBATM_TH_SET VBAT_TH_SET THERM_TH_SET IACP_TH_SET Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word 2 2 2 2 2 2 2 2 2 2 2 4Bh 4Ch 4Dh 4Eh 4Fh VACP_TH_SET VBUS_TH_SET VCC_TH_SET VSYS_TH_SET EXTIADP_TH_SET Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word 2 2 2 2 2 50h 51h 52h 53h 54h 55h 56h 57h 58h 59h IBATP_VAL IBATP_AVE_VAL IBATM_VAL IBATM_AVE_VAL VBAT_VAL VBAT_AVE_VAL THERM_VAL VTH_VAL IACP_VAL IACP_AVE_VAL Read Word Read Word Read Word Read Word Read Word Read Word Read/Write Word Read Word Read Word Read Word 2 2 2 2 2 2 2 2 2 2 5Ah 5Bh 5Ch 5Dh 5Eh 5Fh 60h 61h 62h VACP_VAL VACP_AVE_VAL VBUS_VAL VBUS_AVE_VAL VCC_VAL VCC_AVE_VAL VSYS_VAL VSYS_AVE_VAL EXTIADP_VAL Read Word Read Word Read Word Read Word Read Word Read Word Read Word Read Word Read Word 2 2 2 2 2 2 2 2 2 63h EXTIADP_AVE_VAL Read Word 2 64h 65h 66h 67h 68h 69h 6Ah VACPCLPS_TH_SET (reserved) (reserved) (reserved) INT0_SET INT1_SET INT2_SET Read/Write Word Read/Write Word Read/Write Word Read/Write Word 2 2 2 2 * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 Description BC1.2 Charger Detector on the VBUS side Manual Control Enable Chip ID Chip Revision 1-Cell mode setting, ACP discharge control and ACOK control setting. IC Setting Register for debug and production test. System Power-on Status Software reset and re-load OTP Access Un-protect Setting for Address FCh and FEh Change Command Code Map to Debug Command Code Map SAR-ADC Measurement Control Setting JEITA Temperature Window Setting 1 JEITA Temperature Window Setting 2 JEITA Temperature Window Setting 3 JEITA Temperature Window Setting 4 JEITA Temperature Window Setting 5 Battery Current (Charge) Interrupt Threshold Setting Battery Current (Dis-charge) Interrupt Threshold Setting Battery Voltage Interrupt Threshold Setting Battery Temperature Interrupt Threshold Setting Input Current (between ACP-ACN) Interrupt Threshold Setting Input Voltage (ACP) Interrupt Threshold Setting VBUS Voltage Interrupt Threshold Setting VCC Voltage Interrupt Threshold Setting VSYS Voltage Interrupt Threshold Setting IADP (Input current Limit setting pin) Voltage Interrupt Threshold Setting Battery Current (Charge) Measurement Value Battery Current (Charge) Measurement Average Value Battery Current (Dis-charge) Measurement Value Battery Current (Dis-charge) Measurement Average Value Battery Voltage Measurement Value Battery Voltage Measurement Average Value Temperature Measurement Value Thermistor Measurement Voltage Value Input Current (between ACP-ACN) Measurement Value Input Current (between ACP-ACN) Measurement Average Value Input Voltage (ACP) Measurement Value Input Voltage (ACP) Measurement Average Value VBUS Voltage Measurement Value VBUS Voltage Measurement Average Value VCC Voltage Measurement Value VCC Voltage Measurement Average Value VSYS Voltage Measurement Value VSYS Voltage Measurement Average Value IADP (Input current Limit setting pin) Voltage Measurement Value IADP (Input current Limit setting pin) Voltage Measurement Average Value VACP Collapse Detect Threshold Voltage Setting 1st Level Interrupt Setting 2nd Level Interrupt Setting 1 (VBUS) 2nd Level Interrupt Setting 2 (VCC) ** This product is not designed to protect against radioactive rays. 24/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW Code Command Protocols 6Bh 6Ch 6Dh 6Eh 6Fh 70h 71h 72h 73h 74h 75h 76h 77h 78h 79h 7Ah 7Bh 7Ch 7Dh 7Eh 7Fh INT3_SET INT4_SET INT5_SET INT6_SET INT7_SET INT0_STATUS INT1_STATUS INT2_STATUS INT3_STATUS INT4_STATUS INT5_STATUS INT6_STATUS INT7_STATUS REG0 REG1 OTPREG0 OTPREG1 SMBREG (reserved) (reserved) DEBUG_MODE_SET Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Read/Write Word Byte Size 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 Description 2nd Level Interrupt Setting 3 (Battery) 2nd Level Interrupt Setting 4 (VSYS) 2nd Level Interrupt Setting 5 (Charger) 2nd Level Interrupt Setting 6 (Charger) 2nd Level Interrupt Setting 7 (SAR-ADC) 1st Level Interrupt Status 2nd Level Interrupt Status 1 (VBUS) 2nd Level Interrupt Status 2 (VCC) 2nd Level Interrupt Status 3 (Battery) 2nd Level Interrupt Status 4 (VSYS) 2nd Level Interrupt Status 5 (Charger) 2nd Level Interrupt Status 6 (Charger) 2nd Level Interrupt Status 7 (SAR-ADC) Reserved Register 0 (for future use) Reserved Register 1 (for future use) Input current limit degradation setting. Reserved OTP-loaded Register 1 (for future use) Power Save Mode Setting. Debug Mode Setting 8.3.3. Debug Commands Following is a table of "Debug Commands" which BD99954 supports. "Debug Commands" is used for debug purpose or in production test. Note: Reserved command should not be accessed. If accessed, operation is not guaranteed. * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 25/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 8.4. Battery Charger Commands Description Following is a description of " Battery Charger Commands " that are supported by BD99954. 8.4.1. ChargingCurrent The Battery, System Host or other master device sends the desired charging rate (mA). Command Code: Bus Protocol: Bit Symbol 15 reserved 14 reserved 13 ICHG_SET[13] 12 ICHG_SET[12] 11 ICHG_SET[11] 10 ICHG_SET[10] 9 ICHG_SET[9] 8 ICHG_SET[8] 7 ICHG_SET[7] 6 ICHG_SET[6] 5 reserved 4 reserved 3 reserved 2 reserved 1 reserved 0 reserved 14h Read/Write Word Description Charging current setting. 0 to 16,320mA, 64mA steps. 8.4.2. ChargingVoltage The Battery, System Host or other master device sends the desired charging voltage to the Smart Battery Charger (mV). Command Code: Bus Protocol: Bit Symbol 15 reserved 14 VFASTCHG_REG_SET1[14] 13 VFASTCHG_REG_SET1[13] 12 VFASTCHG_REG_SET1[12] 11 VFASTCHG_REG_SET1[11] 10 VFASTCHG_REG_SET1[10] 9 VFASTCHG_REG_SET1[9] 8 VFASTCHG_REG_SET1[8] 7 VFASTCHG_REG_SET1[7] 6 VFASTCHG_REG_SET1[6] 5 VFASTCHG_REG_SET1[5] 4 VFASTCHG_REG_SET1[4] 3 reserved 2 reserved 1 reserved 0 reserved * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 15h Read/Write Word Description Charging Regulation Voltage. 3,072 to 19,200mV, 16mV steps. The register range : 0 to 32,752mV. But the actual range : 3,072 to 19,200mV. ** This product is not designed to protect against radioactive rays. 26/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 8.4.3. IBUS_LIM_SET VBUS Input Current Limit Setting Command Code: Bus Protocol: Bit Symbol 15 reserved 14 reserved 13 IBUS_LIM_SET1[13] 12 IBUS_LIM_SET1[12] 11 IBUS_LIM_SET1[11] 10 IBUS_LIM_SET1[10] 9 IBUS_LIM_SET1[9] 8 IBUS_LIM_SET1[8] 7 IBUS_LIM_SET1[7] 6 IBUS_LIM_SET1[6] 5 IBUS_LIM_SET1[5] 4 reserved 3 reserved 2 reserved 1 reserved 0 reserved 3Ch Read/Write Word Description VBUS input current limitation. 0 to 16,352mA, 32mA steps. 8.4.4. ICC_LIM_SET VCC Input Current Limit Setting Command Code: Bus Protocol: Bit Symbol 15 reserved 14 reserved 13 ICC_LIM_SET1[13] 12 ICC_LIM_SET1[12] 11 ICC_LIM_SET1[11] 10 ICC_LIM_SET1[10] 9 ICC_LIM_SET1[9] 8 ICC_LIM_SET1[8] 7 ICC_LIM_SET1[7] 6 ICC_LIM_SET1[6] 5 ICC_LIM_SET1[5] 4 reserved 3 reserved 2 reserved 1 reserved 0 reserved * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 3Dh Read/Write Word Description VCC input current limitation. 0 to 16,352mA, 32mA steps. ** This product is not designed to protect against radioactive rays. 27/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 8.4.5. PROTECT_SET Access Un-protect Setting for the “debug command map” (debug and production test only) Command Code: Bus Protocol: Bit Symbol 15 PROTECT_SET[15] 14 PROTECT_SET[14] 13 PROTECT_SET[13] 12 PROTECT_SET[12] 11 PROTECT_SET[11] 10 PROTECT_SET[10] 9 PROTECT_SET[9] 8 PROTECT_SET[8] 7 PROTECT_SET[7] 6 PROTECT_SET[6] 5 PROTECT_SET[5] 4 PROTECT_SET[4] 3 PROTECT_SET[3] 2 PROTECT_SET[2] 1 PROTECT_SET[1] 0 PROTECT_SET[0] 3Eh Read/Write Word Description Access Un-protect Setting for the “debug command map” (debug and production test only) 8.4.6. MAP_SET Change Command Code Map Command Code: Bus Protocol: Bit Symbol 15 MAP_SET [15] 14 MAP_SET [14] 13 MAP_SET[13] 12 MAP_SET[12] 11 MAP_SET[11] 10 MAP_SET[10] 9 MAP_SET[9] 8 MAP_SET[8] 7 MAP_SET[7] 6 MAP_SET[6] 5 MAP_SET[5] 4 MAP_SET[4] 3 MAP_SET[3] 2 MAP_SET[2] 1 MAP_SET[1] 0 MAP_SET[0] * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 3Fh Read/Write Word Description Change Command Code Map ** This product is not designed to protect against radioactive rays. 28/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW 8.5. Extended Commands Description Following is a description of "Extended Commands" that are supported by BD99954. 8.5.1. CHGSTM_STATUS Charger State Machine Status Command Code: Bus Protocol: Bit Symbol 15 reserved 14 PREV_CHGSTM_STATE[6] 13 PREV_CHGSTM_STATE[5] 12 PREV_CHGSTM_STATE[4] 11 PREV_CHGSTM_STATE[3] 10 PREV_CHGSTM_STATE[2] 9 PREV_CHGSTM_STATE[1] 8 PREV_CHGSTM_STATE[0] 7 reserved 6 CHGSTM_STATE[6] 5 CHGSTM_STATE[5] 4 CHGSTM_STATE[4] 3 CHGSTM_STATE[3] 2 CHGSTM_STATE[2] 1 CHGSTM_STATE[1] 0 CHGSTM_STATE[0] State definition. CHGSTM_STATE PREV_CHGSTM_STATE 00h 01h 02h 03h 04h 05h 08h 09h 10h 11h 12h 13h 14h 15h 18h 20h 21h 22h 23h 24h 25h 28h 40h 00h Read Word Description The previous state of the charger state-machine. The current state of the charger state-machine. State Name Description Suspend Trickle-Charge Pre-Charge Fast-Charge Top-off Done OTG OTG Done Temperature Error 1 Temperature Error 2 Temperature Error 3 Temperature Error 4 Temperature Error 5 Temperature Error 6 Temperature Error 7 Thermal Shut Down 1 Thermal Shut Down 2 Thermal Shut Down 3 Thermal Shut Down 4 Thermal Shut Down 5 Thermal Shut Down 6 Thermal Shut Down 7 Battery Error Suspend charging Trickle-charging Pre-charging Fast Charging Reached to Termination Current Charging finished USB On The Go (Reverse Buck Boost Operation) OTG Done Out of standard temperature while Suspend State Out of standard temperature while Trickle-Charge State Out of standard temperature while Pre-Charge State Out of standard temperature while Fast-Charge State Out of standard temperature while Top-off State Out of standard temperature while after Top-off State (DONE) Out of standard temperature while OTG State Thermal Shut Down while Suspend State Thermal Shut Down while Trickle-Charge State Thermal Shut Down while Pre-Charge State Thermal Shut Down while Fast-Charge State Thermal Shut Down while Top-off State Thermal Shut Down after Top-off State (DONE) Thermal Shut Down while OTG State Battery Error * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 ** This product is not designed to protect against radioactive rays. 29/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW Battery Error (40h) (0) (10) (13) (12) Suspend (00h) (11) (1) Thermal Shut Down 1 (20h) Temperature Error 1 (10h) (10) (12) Trickle-Charge (01h) (11) (12) (2) Thermal Shut Down 2 (21h) Temperature Error 2 (11h) (10) (12) Pre-Charge (02h) (11) (12) (3) Thermal Shut Down 3 (22h) Temperature Error 3 (12h) (10) (12) Fast-Charge (03h) (11) (12) (7) Thermal Shut Down 4 (23h) Temperature Error 4 (13h) (4) (12) (10) Top-off (04h) (11) (12) (6) Thermal Shut Down 5 (24h) Temperature Error 5 (14h) (5) (12) (10) Done (05h) (11) (12) Thermal Shut Down 6 (25h) Temperature Error 6 (15h) (12) (10) OTG (08h) Thermal Shut Down 7 (28h) (8) (11) Temperature Error 7 (18h) OTG Done (09h) (9) * Product structure: Silicon monolithic integrated circuit. Copyright: 2017 ROHM Co., Ltd. All rights reserved. http://www.rohm.com/ TSZ22111-14-001 (12) ** This product is not designed to protect against radioactive rays. 30/127 TSZ02201-0B4B0A700040-1-2 18. Jul. 2017, Rev.001 Datasheet BD99954MWV, BD99954GW Arc # (0) (1) (2) (3) Condition to next state CHG_EN is 0, disabled or USB_SUS is 1, suspended. or VBUS and VCC and VACP are undetected or disabled. or Thermistor is open. or Power Path is changed. or Anti-collapse is occurred. or VSYS SCP timer is expired (20ms). VBUS or VCC or VACP detected. and SDP_CHG_TRIG bit set if SDP_CHG_TRIG_EN=1 and SDP port detected. and Charge enable. and DCDC Soft-started. and State Transition Timer expired (25ms). and No anti-collapse occurred. and No Vsys short occurred. VBAT > VPRECHG_TH_SET and State Transition Timer expired (25ms). VBAT > VSYSREG_SET and AUTO_FST=1 and State Transition Timer expired (25ms). (4) (5) (6) (7) (8) (9) (10) (11) (12) (13) ITERM comparotor asserted. and AUTO_TOF=1 and VBAT > Re-charge Battery Voltage and State Transition Timer expired (25ms). Charging Termination Timer expired (15s). back to previous state ----- ----- - VBAT