BD9B305QUZ-E2

Datasheet 2.7 V to 5.5 V Input, 3.0 A Integrated MOSFET Single Synchronous Buck DC/DC Converter BD9B305QUZ Key Specifications General Description        BD9B305QUZ is a synchronous buck DC/DC converter with built-in low on-resistance power MOSFETs. It is capable of providing current up to 3 A. It features fast transient response due to constant on-time control system. The Light Load Mode control improves efficiency in light-load conditions. It is ideal for reducing standby power consumption of equipment. Power Good function makes it possible for system to control sequence. It achieves the high power density and offer a small footprint on the PCB by employing small package. Input Voltage Range: 2.7 V to 5.5 V Output Voltage Range: 0.6 V to VIN x 0.8 V Output Current: 3.0 A (Max) Switching Frequency: 1 MHz (Typ) High-Side FET ON Resistance: 50 mΩ (Typ) Low-Side FET ON Resistance: 40 mΩ (Typ) Shutdown Current: 0 μA (Typ) Package W (Typ) x D (Typ) x H (Max) 2.00 mm x 2.00 mm x 0.40 mm VMMP08LZ2020 Features             Single Synchronous Buck DC/DC Converter Constant On-time Control Light Load Mode Control Adjustable Soft Start Power Good Output Output Capacitor Discharge Function Over Voltage Protection (OVP) Over Current Protection (OCP) Short Circuit Protection (SCP) Thermal Shutdown Protection (TSD) Under Voltage Lockout Protection (UVLO) VMMP08LZ2020 Package Backside Heat Dissipation 0.5 mm Pitch VMMP08LZ2020 Applications  Step-down Power Supply for SoC, FPGA, Microprocessor  Laptop PC / Tablet PC / Server  LCD TV  Storage Device (HDD / SSD)  Printer, OA Equipment  Distributed Power Supply, Secondary Power Supply Typical Application Circuit BD9B305QUZ VIN VIN PGD BOOT CIN 0.1 µF GND VEN SW VOUT L1 R1 EN CFB COUT SS FB R2 〇Product structure : Silicon integrated circuit www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 〇This product has no designed protection against radioactive rays. 1/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Pin Configuration (TOP VIEW) BOOT 1 SW EXP-PAD 8 GND 2 7 VIN PGD 3 6 EN FB 4 5 SS Pin Descriptions Pin No. Pin Name Function 1 BOOT Pin for bootstrap. Connect a bootstrap capacitor of 0.1 µF between this pin and the SW pin. The voltage of this pin is the gate drive voltage of the High-Side FET. 2 SW Switch pin. This pin is connected to the source of the High-Side FET and the drain of the Low-Side FET. Connect a bootstrap capacitor of 0.1 µF between this pin and the BOOT pin. In addition, connect an inductor considering the direct current superimposition characteristic. 3 PGD Power Good pin. This pin is an open drain output that requires a pull-up resistor. See page 17 for setting the resistance. If not used, this pin can be left floating or connected to the ground. 4 FB Output voltage feedback pin. See page 31 for how to calculate the resistances of the output voltage setting. 5 SS Pin for setting the soft start time of output voltage. The soft start time is 1 ms (Typ) when the SS pin is left floating. A ceramic capacitor connected to the SS pin makes the soft start time more than 1 ms. See page 31 for how to calculate the capacitance. 6 EN Enable pin. The device starts up with setting VEN to 0.920 V (Typ) or more. The device enters the shutdown mode with setting VEN to 0.875 V (Typ) or less. This pin must be terminated. 7 VIN Power supply pin. Connecting 0.1 µF (Typ) and 22 µF (Typ) ceramic capacitors is recommended. The detail of a selection is described in page 31. 8 GND Ground pin. - EXP-PAD A backside heat dissipation exposed pad. Connecting to the PCB power ground plane by using thermal vias provides excellent heat dissipation characteristics. See page 34 to 35 for the detailed PCB layout design. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Block Diagram EN 6 VREF Error Amplifier SS 5 7 VIN 1 BOOT 2 SW 8 GND Main Comparator Soft Start On Time High-Side FET FB 4 EN VIN UVLO Control Logic Low-Side FET TSD OVP SCP OCP PGOOD ZXCMP 3 www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 PGD 3/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Description of Blocks 1. VREF The VREF block generates the internal reference voltage. 2. Soft Start The Soft Start circuit slows down the rise of output voltage during start-up and controls the current, which allows the prevention of output voltage overshoot and inrush current. The internal soft start time is 1 ms (Typ) when the SS pin is left floating. A capacitor connected to the SS pin makes the rising time more than 1 ms. 3. Error Amplifier The Error Amplifier adjusts the Main Comparator input voltage to make the internal reference voltage equal to FB voltage. 4. Main Comparator The Main Comparator compares the Error Amplifier output voltage and FB voltage (VFB). When VFB becomes lower than the Error Amplifier output voltage, the output turns high and reports to the On Time block that the output voltage has dropped below the control voltage. 5. On Time This block generates On Time. The designed On Time is generated after the Main Comparator output turns high. The On Time is adjusted to control the frequency to be fixed even with I/O voltage is changed. 6. PGOOD The PGOOD block is for power good function. When the output voltage reaches within ±10 % (Typ) of the setting voltage, the built-in open drain Nch MOSFET connected to the PGD pin is turned off and the PGD pin becomes Hi-Z (High impedance). When the output voltage reaches outside ±15 % (Typ) of the setting voltage, the open drain Nch MOSFET is turned on and PGD pin is pulled down with 100 Ω (Typ). 7. UVLO The UVLO block is for under voltage lockout protection. The device is shut down when input voltage (VIN) falls to 2.45 V (Typ) or less. The threshold voltage has the 100 mV (Typ) hysteresis. 8. TSD The TSD block is for thermal protection. The device is shut down when the junction temperature Tj reaches to 175 °C (Typ) or more. The device is automatically restored to normal operation with a hysteresis of 25 °C (Typ) when the Tj goes down. 9. OVP The OVP block is for output over voltage protection. When the FB voltage (VFB) exceeds 115 % (Typ) or more of FB threshold voltage VFBTH, the output MOSFETs are turned off. After VFB falls 110 % (Typ) or less of VFBTH, the output MOSFETs are returned to normal operation condition. 10. OCP The OCP block is for over current protection. This function operates by limiting the current that flows through the High-Side FET and the Low-Side FET at each cycle of the switching frequency. 11. SCP The SCP is for short circuit protection. When 256 times OCP are counted on the condition where the device completes the soft start and the output voltage falls below 85 % (Typ) of the setting voltage, the device is shut down for 128 ms (Typ). After 128 ms shutdown, the device restarts. (HICCUP operation) 12. ZXCMP The ZXCMP is a comparator that monitors the inductor current. When inductor current falls below 0A (Typ) while the Low-Side FET is on, it turns the FET off. 13. Control Logic The Control Logic controls the switching operation and protection function operation. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 4/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Absolute Maximum Ratings (Ta = 25 °C) Parameter Symbol Rating Unit Input Voltage VIN -0.3 to +7 V EN Voltage VEN -0.3 to +VIN V FB Voltage VFB -0.3 to +7 V SS Voltage VSS -0.3 to +VIN V PGD Voltage VPGD -0.3 to +7 V SW Voltage VSW -0.3 to VIN + 0.3 V Voltage from GND to BOOT Voltage from SW to BOOT Output Current Maximum Junction Temperature Storage Temperature Range VBOOT -0.3 to +14 V ΔVBOOT-SW -0.3 to +7 V IOUT 3.5 A Tjmax 150 °C Tstg -55 to +150 °C Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction temperature rating. Thermal Resistance (Note 1) Parameter Symbol Thermal Resistance (Typ) Unit 1s (Note 3) 2s2p (Note 4) θJA 208.30 90.30 °C/W ΨJT 28.00 22.00 °C/W VMMP08LZ2020 Junction to Ambient Junction to Top Characterization Parameter (Note 2) (Note 1) Based on JESD51-2A (Still-Air). (Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 3) Using a PCB board based on JESD51-3. (Note 4) Using a PCB board based on JESD51-5, 7. Layer Number of Measurement Board Single Material Board Size FR-4 114.3 mm x 76.2 mm x 1.57 mmt Top Copper Pattern Thickness Footprints and Traces 70 μm Layer Number of Measurement Board 4 Layers Material Board Size FR-4 114.3 mm x 76.2 mm x 1.6 mmt Top 2 Internal Layers Thermal Via (Note 5) Pitch Diameter 1.20 mm Φ0.30 mm Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70 μm 74.2 mm x 74.2 mm 35 μm 74.2 mm x 74.2 mm 70 μm (Note 5) This thermal via connects with the copper pattern of all layers. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 5/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Recommended Operating Conditions Parameter Input Voltage Operating Temperature (Note 1) Symbol Min Typ Max Unit VIN 2.7 - 5.5 V Ta -40 - +85 °C Output Current (Note 1) IOUT 0 - 3.0 A Output Voltage Setting VOUT 0.6 - VIN x 0.8 V (Note 1) Tj must be lower than 150 °C under the actual operating environment. Electrical Characteristics (Unless otherwise specified Ta = 25 °C, VIN = 5 V, VEN = 5 V) Parameter Symbol Min Typ Max Unit Conditions ISDN - 0 10 µA IQ - 15 30 µA UVLO Detection Threshold Voltage VUVLO1 2.350 2.450 2.550 V VEN = 0 V IOUT = 0 A, No switching VIN falling UVLO Release Threshold Voltage VUVLO2 2.425 2.550 2.700 V VIN rising VUVLOHYS 50 100 200 mV EN Threshold Voltage High VENH 0.875 0.920 0.965 V VEN rising EN Threshold Voltage Low VENL 0.830 0.875 0.920 V VEN falling VENHYS 27 45 63 mV IEN - 0 10 µA VEN = 5 V Input Supply Shutdown Current Quiescent Current at No Load UVLO Hysteresis Voltage Enable EN Hysteresis Voltage EN Input Current Reference Voltage, Error Amplifier, Soft Start FB Threshold Voltage VFBTH 0.591 0.600 0.609 V PWM mode FB Input Current IFB - - 100 nA VFB = 0.6 V Soft Start Time tSS 0.6 1.0 1.4 ms SS pin is left floating. Soft Start Charge Current ISS 0.6 1.0 1.4 µA tON 270 360 450 ns VOUT = 1.8 V, PWM mode High-Side FET ON Resistance RONH - 50 100 mΩ VBOOT - VSW = 5 V Low-Side FET ON Resistance RONL - 40 80 mΩ High-Side FET Leakage Current ILKH - 0 10 µA No switching Low-Side FET Leakage Current ILKL - 0 10 µA No switching VPGDGR 85 90 95 % VPGDGF 105 110 115 % VPGDFR 110 115 120 % VPGDFF 80 85 90 % ILKPGD - 0 5 µA PGD MOSFET ON Resistance RPGD - 100 200 Ω PGD Output Low Level Voltage VPGDL - 0.1 0.2 V On Time On Time SW (MOSFET) Power Good Power Good Rising Threshold Voltage Power Good Falling Threshold Voltage Power Fault Rising Threshold Voltage Power Fault Falling Threshold Voltage PGD Output Leakage Current www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 6/41 VFB rising, VPGDGR = VFB / VFBTH x 100 VFB falling, VPGDGF = VFB / VFBTH x 100 VFB rising, VPGDFR = VFB / VFBTH x 100 VFB falling, VPGDFF = VFB / VFBTH x 100 VPGD = 5 V IPGD = 1 mA TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Typical Performance Curves 10 30 VIN = 5.0 V Quiescent Current at No Load : IQ [μA] VIN = 5.0 V Shutdown Current : ISDN [μA] VIN = 3.3 V 8 6 4 2 0 20 15 10 5 0 -40 -20 0 20 40 Temperature : Ta [°C] 60 80 -40 Figure 1. Shutdown Current vs Temperature -20 0 20 40 Temperature : Ta [°C] 60 80 Figure 2. Quiescent Current at No Load vs Temperature 0.97 2.70 VIN = 5.0 V 0.95 2.65 EN Threshold Voltage : VEN [V] UVLO Threshold Voltage : VUVLO1, VUVLO2 [V] VIN = 3.3 V 25 2.60 UVLO Release ( VIN rising) 2.55 2.50 UVLO Detection ( VIN falling) 2.45 2.40 VENH ( VEN rising) 0.93 0.91 0.89 0.87 VENL ( VEN falling) 0.85 2.35 0.83 -40 -20 0 20 40 Temperature : Ta [°C] 60 80 -40 Figure 3. UVLO Threshold Voltage vs Temperature www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 -20 0 20 40 Temperature : Ta [°C] 60 80 Figure 4. EN Threshold Voltage vs Temperature 7/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Typical Performance Curves – continued 10 0.610 FB Threshold Voltage : VFBTH [V] 8 EN Input Current : IEN [μA] VIN = 5.0 V 0.608 VIN = 5.0 V, VEN = 5.0 V 6 4 2 VIN = 3.3 V 0.606 0.604 0.602 0.600 0.598 0.596 0.594 0.592 0 -40 -20 0 20 40 Temperature : Ta [°C] 60 0.590 80 -40 Figure 5. EN Input Current vs Temperature -20 0 20 40 60 Temperature : Ta [°C] 80 Figure 6. FB Threshold Voltage vs Temperature 1.4 100 VIN = 5.0 V VIN = 5.0 V 1.3 VIN = 3.3 V VIN = 3.3 V Soft Start Time : tSS [ms] FB Input Current : IFB [nA] 80 60 40 1.2 1.1 1.0 0.9 0.8 20 0.7 0 0.6 -40 -20 0 20 40 Temperature : Ta [°C] 60 80 -40 Figure 7. FB Input Current vs Temperature www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 -20 0 20 40 Temperature : Ta [°C] 60 80 Figure 8. Soft Start Time vs Temperature (SS pin is left floating.) 8/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Typical Performance Curves – continued 460 1.4 1.3 440 VIN = 3.3 V 420 1.2 On Time : tON [ns] Soft Start Charge Current : ISS [μA] VIN = 5.0 V 1.1 1.0 0.9 0.8 400 380 360 340 320 300 280 0.7 260 0.6 -40 -20 0 20 40 Temperature : Ta [°C] 60 -40 80 Figure 9. Soft Start Charge Current vs Temperature 0 20 40 Temperature : Ta [°C] 60 80 Figure 10. On Time vs Temperature (VIN = 5.0 V, VOUT = 1.8 V, IOUT = 1.0 A) 1.3 100 High-Side FET ON Resistance : RONH [mΩ] Switching Frequency : fSW [MHz] -20 1.2 1.1 1.0 0.9 0.8 0.7 -40 -20 0 20 40 Temperature : Ta [°C] 60 VIN = 3.3 V 80 70 60 50 40 30 20 10 0 80 -40 Figure 11. Switching Frequency vs Temperature (VIN = 5.0 V, VOUT = 1.8 V, IOUT = 1.0 A) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 VIN = 5.0 V 90 -20 0 20 40 Temperature : Ta [°C] 60 80 Figure 12. High-Side FET ON Resistance vs Temperature 9/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Typical Performance Curves – continued Power Good / Fault Threshold Voltage : VPGD [%] Low-Side FET ON Resistance : RONL [mΩ] 80 VIN = 5.0 V 70 VIN = 3.3 V 60 50 40 30 20 10 0 -40 -20 0 20 40 Temperature : Ta [°C] 60 80 PGD Output Low Level Voltage : VPGDL [V] PGD MOSFET ON Resistance : RPGD [Ω] 160 140 120 100 80 60 40 20 0 0 20 40 Temperature : Ta [°C] 60 Power Good (VFB falling) 105 100 95 Power Good (VFB rising) 90 85 Power Fault (VFB falling) 80 -20 0 20 40 Temperature : Ta [°C] 60 80 VIN = 5.0 V 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 80 -40 Figure 15. PGD MOSFET ON Resistance vs Temperature www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 110 0.20 VIN = 5.0 V -20 Power Fault (VFB rising) Figure 14. Power Good / Fault Threshold Voltage vs Temperature 200 -40 VIN = 5.0 V 115 -40 Figure 13. Low-Side FET ON Resistance vs Temperature 180 120 10/41 -20 0 20 40 Temperature : Ta [°C] 60 80 Figure 16. PGD Output Low Level Voltage vs Temperature TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Typical Performance Curves – continued Time: 500 µs/div Time: 2 ms/div VIN: 3 V/div VIN: 3 V/div VEN: 3 V/div VEN: 3 V/div VOUT: 1 V/div VOUT: 1 V/div VPGD: 5 V/div VPGD: 5 V/div Figure 17. Start-up at No Load: VEN = 0 V to 5 V (VIN = 5.0 V, VOUT = 1.8 V, CSS = OPEN) Figure 18. Shutdown at No Load: VEN = 5 V to 0 V (VIN = 5.0 V, VOUT = 1.8 V, CSS = OPEN) Time: 2 ms/div Time: 500 µs/div VIN: 3 V/div VIN: 3 V/div VEN: 3 V/div VEN: 3 V/div VOUT: 1 V/div VOUT: 1 V/div VPGD: 5 V/div VPGD: 5 V/div Figure 19. Start-up at RLoad = 0.6 Ω: VEN = 0 V to 5 V (VIN = 5.0 V, VOUT = 1.8 V, CSS = OPEN) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 20. Shutdown at RLoad = 0.6 Ω: VEN = 5 V to 0 V (VIN = 5.0 V, VOUT = 1.8 V, CSS = OPEN) 11/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Typical Performance Curves – continued Time: 2 ms/div Time: 500 µs/div VIN: 3 V/div VIN: 3 V/div VEN: 3 V/div VEN: 3 V/div VOUT: 1 V/div VOUT: 1 V/div VPGD: 5 V/div VPGD: 5 V/div Figure 21. Start-up at No Load: VIN = VEN = 0 V to 5 V (VOUT = 1.8 V, CSS = OPEN) Figure 22. Shutdown at No Load: VIN = VEN = 5 V to 0 V (VOUT = 1.8 V, CSS = OPEN) Time: 500 µs/div Time: 2 ms/div VIN: 3 V/div VIN: 3 V/div VEN: 3 V/div VEN: 3 V/div VOUT: 1 V/div VOUT: 1 V/div VPGD: 5 V/div VPGD: 5 V/div Figure 23. Start-up at RLoad = 0.6 Ω: VIN = VEN = 0 V to 5 V (VOUT = 1.8 V, CSS = OPEN) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 24. Shutdown at RLoad = 0.6 Ω: VIN = VEN = 5 V to 0 V (VOUT = 1.8 V, CSS = OPEN) 12/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ 3.5 3.5 3.0 3.0 Output Current : IOUT [A] Output Current : IOUT [A] Typical Performance Curves – continued 2.5 2.0 1.5 1.0 0.5 2.0 1.5 1.0 0.5 0.0 0.0 -60 -40 -20 0 20 40 60 Temperature : Ta [°C] 80 -60 100 Figure 25. Output Current vs Temperature (Note 1) Operating Range: Tj < 150 °C (VIN = 5.0 V, VOUT = 1.8 V) 100 100 95 95 90 90 85 85 80 80 75 70 65 60 VOUT = 3.3 V (L=1.5 μH) 55 VOUT = 1.8 V (L=1.0 μH) VOUT = 1.2 V (L=1.0 μH) 50 VOUT = 1.0 V (L=1.0 μH) 45 VOUT = 0.6 V (L=1.0 μH) 40 0.001 0.01 0.1 1 Output Current : IOUT [A] -40 Figure 27. Efficiency vs Output Current (VIN = 5.0 V, L: FDSD0518 series; Murata) 80 100 75 70 65 60 VOUT = 1.8 V (L=1.0 μH) 55 VOUT = 1.2 V (L=1.0 μH) 50 VOUT = 1.0 V (L=1.0 μH) 45 VOUT = 0.6 V (L=1.0 μH) 40 0.001 10 -20 0 20 40 60 Temperature : Ta [°C] Figure 26. Output Current vs Temperature (Note 1) Operating Range: Tj < 150 °C (VIN = 3.3 V, VOUT = 1.8 V) Efficiency [%] Efficiency [%] 2.5 0.01 0.1 1 Output Current : IOUT [A] 10 Figure 28. Efficiency vs Output Current (VIN = 3.3 V, L: FDSD0518 series; Murata) (Note 1) Measured on FR-4 board 67.5 mm x 67.5 mm, Copper Thickness: Top and Bottom 70 μm, 2 Internal Layers 35 μm. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 13/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ 1.83 1.30 1.82 1.20 Switching Frequency : fSW [MHz] Output Voltage : VOUT [V] Typical Performance Curves – continued 1.81 1.80 1.79 1.78 1.10 1.00 0.90 0.80 0.70 1.77 2.5 3.0 3.5 4.0 4.5 Input Voltage : VIN [V] 5.0 2.5 5.5 Figure 29. Output Voltage vs Input Voltage (Line Regulation) (VOUT = 1.8 V, IOUT = 1.0 A) 3.5 4.0 4.5 Input Voltage : VIN [V] 5.0 5.5 Figure 30. Switching Frequency vs Input Voltage (VOUT = 1.8 V, IOUT = 1.0 A) 1.4 1.83 Switching Frequency : fSW [MHz] 1.82 Output Voltage : VOUT [V] 3.0 1.81 1.80 1.79 1.78 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1.77 0.0 0.5 1.0 1.5 2.0 Output Current : IOUT [A] 2.5 0.0 3.0 Figure 31. Output Voltage vs Output Current (Load Regulation) (VIN = 5.0 V, VOUT = 1.8 V) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 0.5 1.0 1.5 2.0 Output Current : IOUT [A] 2.5 3.0 Figure 32. Switching Frequency vs Output Current (VIN = 5.0 V, VOUT = 1.8 V) 14/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Typical Performance Curves – continued 1.4 1.83 Switching Frequency : fSW [MHz] Output Voltage : VOUT [V] 1.82 1.81 1.80 1.79 1.78 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1.77 0.0 0.5 1.0 1.5 2.0 Output Current : IOUT [A] 2.5 0.0 3.0 Figure 33. Output Voltage vs Output Current (Load Regulation) (VIN = 3.3 V, VOUT = 1.8 V) 0.5 2.5 3.0 Figure 34. Switching Frequency vs Output Current (VIN = 3.3 V, VOUT = 1.8 V) Time: 200 µs/div Time: 50 ms/div VOUT: 2 V/div VOUT: 2 V/div VPGD: 5 V/div VPGD: 5 V/div VSW: 5 V/div VSW: 5 V/div IL: 3 A/div IL: 3 A/div Figure 35. OCP Operation (VIN = 5.0 V, VOUT = 1.8 V to 0 V) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 1.0 1.5 2.0 Output Current : IOUT [A] Figure 36. SCP Operation (VIN = 5.0 V, VOUT = 1.8 V to 0 V) 15/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Function Explanations 1. Basic Operation (1) DC/DC Converter Operation BD9B305QUZ is a synchronous buck DC/DC converter that achieves faster load transient response due to constant on-time control. The device performs switching operation in PWM (Pulse Width Modulation) control at heavy load. It operates in Light Load Mode control at lighter load to improve efficiency. Efficiency [%] Light Load Mode Control PWM Control Output Current [A] Figure 37. Efficiency Image between Light Load Mode Control and PWM Control (2) Enable Control The startup and shutdown can be controlled by the EN voltage (VEN). When VEN becomes 0.920 V (Typ) or more, the internal circuit is activated and the device starts up. When VEN becomes 0.875 V (Typ) or less, the device is shut down. In this shutdown mode, the High-Side FET and the Low-Side FET are turned off and the SW pin is connected to GND through an internal resistor 100 Ω (Typ) to discharge the output. The start-up with VEN must be at the same time of the input voltage VIN (VIN = VEN) or after supplying VIN. VIN 0V VEN VENH VENL 0V VOUT 0V Startup Shutdown Figure 38. Startup and Shutdown with Enable Control Timing Chart www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 16/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Function Explanations – continued (3) Soft Start When VEN goes high, soft start function operates and output voltage gradually rises. This soft start function can prevent overshoot of the output voltage and excessive inrush current. The soft start time tSS is 1 ms (Typ) when the SS pin is left floating. A capacitor connected to the SS pin makes tSS more than 1 ms. See page 31 for how to set the soft start time. VIN 0V VEN 0V VOUT 0V VFBTH x 90 % 0.6 V (Typ) VFB 0V VPGD 0V tSS Figure 39. Soft Start Timing Chart (4) Power Good Output When the output voltage VOUT reaches within ±10 % (Typ) of the voltage setting, the built-in open drain Nch MOSFET connected to the PGD pin is turned off, and the PGD pin goes Hi-Z (High impedance). When VOUT reaches outside ±15 % (Typ) of the voltage setting, the open drain Nch MOSFET is turned on and PGD pin is pulled down with 100 Ω (Typ). It is recommended to connect a pull-up resistor of 10 kΩ to 100 kΩ. State Before Supply Input Voltage Table 1. PGD Output Condition PGD Output VIN < 0.7 V (Typ) Hi-Z Shutdown VEN ≤ 0.875 V (Typ) Low (Pull-down) Enable VEN ≥ 0.920 V (Typ) 90 % (Typ) ≤ VFB / VFBTH ≤ 110 % (Typ) Hi-Z VFB / VFBTH ≤ 85 % (Typ) or 115 % (Typ) ≤ VFB / VFBTH Low (Pull-down) UVLO 0.7 V (Typ) < VIN ≤ 2.45 V (Typ) Low (Pull-down) TSD Tj ≥ 175 °C (Typ) Low (Pull-down) SCP Complete Soft Start VFB / VFBTH ≤ 85 % (Typ) OCP 256 counts Low (Pull-down) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 17/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Function Explanations – continued VIN 0V VEN 0V +15 % (Typ) +10 % (Typ) -10 % (Typ) -15 % (Typ) VOUT 0V VFB TH x 110 % (Typ) VFB TH x 115 % (Typ) VFB TH x 90 % (Typ) VFB TH x 85 % (Typ) VFB 0V tSS VPGD 0V Figure 40. Power Good Timing Chart (Connecting a pull-up resistor to the PGD pin) (5) Output Capacitor Discharge Function When even one of the following conditions is satisfied, output is discharged with 100 Ω (Typ) resistor through the SW pin. • Shutdown: VEN ≤ 0.875 V (Typ) • UVLO: VIN ≤ 2.45 V (Typ) • TSD: Tj ≥ 175 °C (Typ) • SCP: Complete Soft Start, VFB / VFBTH ≤ 85 % (Typ), and OCP 256 counts When all of the above conditions are released, output discharge is stopped. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 18/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Function Explanations – continued 2. Protection The protection circuits are intended for prevention of damage caused by unexpected accidents. Do not use the continuous protection. (1) Over Current Protection (OCP) / Short Circuit Protection (SCP) Over Current Protection (OCP) restricts the flowing current through the Low-Side FET and the High-Side FET for every switching period. If the inductor current exceeds the Low-Side OCP ILOCP = 4.5 A (Typ) while the Low-Side FET is on, the Low-Side FET remains on even with FB voltage VFB falls to VFBTH = 0.6 V (Typ) or lower. If the inductor current becomes lower than ILOCP, the High-Side FET is able to be turned on. When the inductor current becomes the High-Side OCP IHOCP = 6.5 A (Typ) or more while the High-Side FET is on, the High-Side FET is turned off. Output voltage may decrease by changing frequency and duty due to the OCP operation. Short Circuit Protection (SCP) function is a Hiccup mode. When Low-Side OCP operates 256 cycles while VFB is VFBTH x 85 % or less (VPGD = Low), the device stops the switching operation for 128 ms (Typ). After the 128 ms (Typ), the device restarts. SCP does not operate during the soft start even if the device is in the SCP conditions. Do not exceed the maximum junction temperature (Tjmax = 150 °C) during OCP and SCP operation. Table 2. The Operating Condition of OCP and SCP VFB Start-up OCP VEN ≤ VFBTH x 85 % (Typ) ≥ 0.920 V (Typ) > VFBTH x 85 % (Typ) ≤ VFBTH x 85 % (Typ) ≤ 0.875 V (Typ) During Soft Start Complete Soft Start - Shutdown SCP Enable Disable Enable Disable Enable Enable Disable Disable VOUT VFB TH x 90 % (Typ) VFB VFB TH x 85 % (Typ) VPGD VSW High-Side FET Inte rnal Gate Signal Low-Side FET Inte rnal Gate Signal IHOCP ILOCP Inductor Current High-Side OCP Internal Signal Low-Side OCP Internal Signal SCP Internal Signal OCP 256 counts Less than OCP 256 counts 128 ms (Typ) Figure 41. OCP and SCP Timing Chart www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 19/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Function Explanations – continued (2) Under Voltage Lockout Protection (UVLO) When input voltage VIN falls to 2.45 V (Typ) or lower, the device is shut down. When VIN becomes 2.55 V (Typ) or more, the device starts up. The hysteresis is 100 mV (Typ). VIN (=VEN) VOUT Hysteresis VUVLOHYS = 100 mV (Typ) UVLO Release VUVLO2 = 2.55 V (Typ) UVLO Detect VUVLO1 = 2.45 V (Typ) 0V VOUT 0V tSS Figure 42. UVLO Timing Chart (3) Thermal Shutdown Protection (TSD) Thermal shutdown circuit prevents heat damage to the IC. The device should always operate within the IC’s maximum junction temperature rating (Tjmax = 150 °C). However, if it continues exceeding the rating and the junction temperature Tj rises to 175 °C (Typ), the TSD circuit is activated and it turns the output MOSFETs off. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. The TSD threshold has a hysteresis of 25 °C (Typ). Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings. Therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage. (4) Over Voltage Protection (OVP) When the FB voltage VFB exceeds VFBTH x 115 % (Typ) or more, the output MOSFETs are turned off to prevent the increase in the output voltage. After the VFB falls VFBTH x 110 % (Typ) or less, the output MOSFETs are returned to normal operation condition. Switching operation will restart after VFB falls below VFBTH. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 20/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Application Examples 1. VIN = 5 V, VOUT = 3.3 V Table 3. Specification of Application (VIN = 5 V, VOUT = 3.3 V) Symbol Specification Value Parameter Input Voltage Output Voltage Maximum Output Current VIN 5 V (Typ) VOUT 3.3 V (Typ) IOUTMAX 3.0 A Switching Frequency fSW 1.0 MHz (Typ) Soft Start Time tSS 1 ms (Typ) Temperature Ta 25 °C R3 R4 5 SS FB EN PGD R2 4 C6 C4 R6 R1 6 EN 3 PGD BD9B305QUZ R5 VIN 7 C3 VIN SW R0 2 C1 C2 C5 8 GND L1 GND EXP-PAD BOOT VOUT C8 C7 1 GND Figure 43. Application Circuit Part No. L1 (Note 1) C2 (Note 2) C1 C3 (Note 2) Table 4. Recommended Component Values (VIN = 5 V, VOUT = 3.3 V) Value Part Name Size Code (mm) Manufacturer 1.5 μH FDSD0518-H-1R5M 5249 Murata 0.1 μF (16V, X5R, ±10 %) GRM033R61C104KE14 0603 Murata 22 μF (10V, X5R, ±20 %) GRM188R61A226ME15 1608 Murata - - - - C4 - - - - C5 (Note 3) 0.1 μF (16V, X5R, ±10 %) GRM033R61C104KE14 0603 Murata C6 68 pF (50 V, C0G, ±5 %) GRM0335C1H680JA01 0603 Murata (Note 4) 47 μF (4 V, X5R, ±20 %) AMK107BBJ476MA-RE 1608 TAIYO YUDEN C8 (Note 4) - - - - R1 200 kΩ (1 %, 1/16 W) MCR01MZPF2003 1005 ROHM R2 12 kΩ (1 %, 1/16 W) MCR01MZPF1202 1005 ROHM R3 47 kΩ (1 %, 1/16 W) MCR01MZPF4702 1005 ROHM R4 100 kΩ (1 %, 1/16 W) MCR01MZPF1003 1005 ROHM R5 1.8 MΩ (1 %, 1/16 W) MCR01MZPF1804 1005 ROHM R6 470 kΩ (1 %, 1/16 W) MCR01MZPF4703 1005 ROHM Short - - - C7 R0 (Note 5) (Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor C1 as close as possible to the VIN pin and the GND pin if needed. (Note 2) For the input capacitor C2 and C3, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no less than 4.7 μF. (Note 3) For the bootstrap capacitor C5, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no less than 0.022 μF. (Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor C7 and C8, the loop response characteristics may change. Confirm with the actual application. The total capacitance of 10 μF to 47 x 2 μF is recommended for the output capacitor. (Note 5) R0 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R0, it is possible to measure the frequency response (phase margin) using a FRA. However, the resistor will not be used in actual application, use this resistor pattern in short-circuit mode. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 21/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ 1. VIN = 5 V, VOUT = 3.3 V – continued Time: 2 µs/div Time: 2 µs/div VOUT: 20 mV/div VOUT: 20 mV/div VSW: 2 V/div VSW: 2 V/div Figure 44. Output Ripple Voltage (IOUT = 0.1 A) 80 Figure 45. Output Ripple Voltage (IOUT = 3.0 A) 180 Time: 100 µs/div Gain Phase 135 40 90 20 45 0 0 -20 -45 -40 -90 -60 -135 -80 1 10 100 Frequency [kHz] VOUT: 200 mV/div Phase [°] Gain [dB] 60 IOUT: 500 mA/div -180 1000 Figure 46. Frequency Characteristics (IOUT = 3.0 A) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 47. Load Transient Response (IOUT = 0.1 A to 1.0 A) 22/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Application Examples – continued 2. VIN = 5 V, VOUT = 1.8 V Table 5. Specification of Application (VIN = 5 V, VOUT = 1.8 V) Symbol Specification Value Parameter Input Voltage Output Voltage Maximum Output Current VIN 5 V (Typ) VOUT 1.8 V (Typ) IOUTMAX 3.0 A Switching Frequency fSW 1.0 MHz (Typ) Soft Start Time tSS 1 ms (Typ) Temperature Ta 25 °C R3 R4 5 SS FB R2 4 C6 C4 R6 R1 EN PGD 6 EN 3 7 VIN SW 2 8 GND EXP-PAD BOOT 1 PGD BD9B305QUZ R5 VIN C3 R0 C1 C2 GND L1 C5 VOUT C8 C7 GND Figure 48. Application Circuit Part No. L1 (Note 1) C2 (Note 2) C1 C3 (Note 2) Table 6. Recommended Component Values (VIN = 5 V, VOUT = 1.8 V) Value Part Name Size Code (mm) Manufacturer 1.0 μH FDSD0518-H-1R0M 5249 Murata 0.1 μF (16V, X5R, ±10 %) GRM033R61C104KE14 0603 Murata 22 μF (10V, X5R, ±20 %) GRM188R61A226ME15 1608 Murata - - - - C4 - - - - C5 (Note 3) 0.1 μF (16V, X5R, ±10 %) GRM033R61C104KE14 0603 Murata C6 100 pF (50 V, C0G, ±5 %) GRM0335C1H101JA01 0603 Murata 47 μF (4 V, X5R, ±20 %) AMK107BBJ476MA-RE 1608 TAIYO YUDEN C8 (Note 4) - - - - R1 200 kΩ (1 %, 1/16 W) MCR01MZPF2003 1005 ROHM C7 R0 (Note 4) R2 Short - - - R3 100 kΩ (1 %, 1/16 W) MCR01MZPF1003 1005 ROHM R4 100 kΩ (1 %, 1/16 W) MCR01MZPF1003 1005 ROHM R5 - - - - R6 - - - - Short - - - (Note 5) (Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor C1 as close as possible to the VIN pin and the GND pin if needed. (Note 2) For the input capacitor C2 and C3, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no less than 4.7 μF. (Note 3) For the bootstrap capacitor C5, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no less than 0.022 μF. (Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor C7 and C8, the loop response characteristics may change. Confirm with the actual application. The total capacitance of 10 μF to 47 x 2 μF is recommended for the output capacitor. (Note 5) R0 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R0, it is possible to measure the frequency response (phase margin) using a FRA. However, the resistor will not be used in actual application, use this resistor pattern in short-circuit mode. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 23/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ 2. VIN = 5 V, VOUT = 1.8 V – continued Time: 2 µs/div Time: 2 µs/div VOUT: 20 mV/div VOUT: 20 mV/div VSW: 2 V/div VSW: 2 V/div Figure 49. Output Ripple Voltage (IOUT = 0.1 A) 80 Figure 50. Output Ripple Voltage (IOUT = 3.0 A) 180 Gain Phase 40 90 20 45 0 0 -20 -45 -40 -90 -60 -135 -80 1 10 100 Frequency [kHz] Time: 100 µs/div 135 VOUT: 100 mV/div Phase [°] Gain [dB] 60 IOUT: 500 mA/div -180 1000 Figure 51. Frequency Characteristics (IOUT = 3.0 A) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 52. Load Transient Response (IOUT = 0.1 A to 1.0 A) 24/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Application Examples – continued 3. VIN = 5 V, VOUT = 1.2 V Table 7. Specification of Application (VIN = 5 V, VOUT = 1.2 V) Symbol Specification Value Parameter Input Voltage Output Voltage Maximum Output Current VIN 5 V (Typ) VOUT 1.2 V (Typ) IOUTMAX 3.0 A Switching Frequency fSW 1.0 MHz (Typ) Soft Start Time tSS 1 ms (Typ) Temperature Ta 25 °C R3 R4 5 SS FB R2 4 C6 C4 R6 R1 EN PGD 6 EN 3 7 VIN SW 2 8 GND EXP-PAD BOOT 1 PGD BD9B305QUZ R5 VIN C3 R0 C1 C2 GND L1 C5 VOUT C8 C7 GND Figure 53. Application Circuit Part No. L1 (Note 1) C2 (Note 2) C1 C3 (Note 2) Table 8. Recommended Component Values (VIN = 5 V, VOUT = 1.2 V) Value Part Name Size Code (mm) Manufacturer 1.0 μH FDSD0518-H-1R0M 5249 Murata 0.1 μF (16V, X5R, ±10 %) GRM033R61C104KE14 0603 Murata 22 μF (10V, X5R, ±20 %) GRM188R61A226ME15 1608 Murata - - - - C4 - - - - C5 (Note 3) 0.1 μF (16V, X5R, ±10 %) GRM033R61C104KE14 0603 Murata C6 120 pF (50 V, C0G, ±5 %) GRM0335C1H121JA01 0603 Murata 47 μF (4 V, X5R, ±20 %) AMK107BBJ476MA-RE 1608 TAIYO YUDEN C8 (Note 4) - - - - R1 150 kΩ (1 %, 1/16 W) MCR01MZPF1503 1005 ROHM C7 R0 (Note 4) R2 Short - - - R3 150 kΩ (1 %, 1/16 W) MCR01MZPF1503 1005 ROHM R4 100 kΩ (1 %, 1/16 W) MCR01MZPF1003 1005 ROHM R5 - - - - R6 - - - - Short - - - (Note 5) (Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor C1 as close as possible to the VIN pin and the GND pin if needed. (Note 2) For the input capacitor C2 and C3, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no less than 4.7 μF. (Note 3) For the bootstrap capacitor C5, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no less than 0.022 μF. (Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor C7 and C8, the loop response characteristics may change. Confirm with the actual application. The total capacitance of 10 μF to 47 x 2 μF is recommended for the output capacitor. (Note 5) R0 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R 0, it is possible to measure the frequency response (phase margin) using a FRA. However, the resistor will not be used in actual application, use this resistor pattern in short-circuit mode. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 25/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ 3. VIN = 5 V, VOUT = 1.2 V – continued Time: 2 µs/div Time: 2 µs/div VOUT: 20 mV/div VOUT: 20 mV/div VSW: 2 V/div VSW: 2 V/div Figure 54. Output Ripple Voltage (IOUT = 0.1 A) 80 Figure 55. Output Ripple Voltage (IOUT = 3.0 A) 180 Gain Phase 40 90 20 45 0 0 -20 -45 -40 -90 -60 -135 -80 1 10 100 Frequency [kHz] Time: 100 µs/div 135 VOUT: 100 mV/div Phase [°] Gain [dB] 60 IOUT: 500 mA/div -180 1000 Figure 56. Frequency Characteristics (IOUT = 3.0 A) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 57. Load Transient Response (IOUT = 0.1 A to 1.0 A) 26/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Application Examples – continued 4. VIN = 5 V, VOUT = 1.0 V Table 9. Specification of Application (VIN = 5 V, VOUT = 1.0 V) Symbol Specification Value Parameter Input Voltage Output Voltage Maximum Output Current VIN 5 V (Typ) VOUT 1.0 V (Typ) IOUTMAX 3.0 A Switching Frequency fSW 1.0 MHz (Typ) Soft Start Time tSS 1 ms (Typ) Temperature Ta 25 °C R3 R4 5 SS FB R2 4 C6 C4 R6 R1 6 EN PGD EN 3 PGD BD9B305QUZ R5 VIN C3 R0 7 VIN SW 2 8 GND EXP-PAD BOOT 1 C1 C2 GND L1 C5 VOUT C8 C7 GND Figure 58. Application Circuit Part No. L1 (Note 1) C2 (Note 2) C1 C3 (Note 2) Table 10. Recommended Component Values (VIN = 5 V, VOUT = 1.0 V) Value Part Name Size Code (mm) Manufacturer 1.0 μH FDSD0518-H-1R0M 5249 Murata 0.1 μF (16V, X5R, ±10 %) GRM033R61C104KE14 0603 Murata 22 μF (10V, X5R, ±20 %) GRM188R61A226ME15 1608 Murata - - - - C4 - - - - C5 (Note 3) 0.1 μF (16V, X5R, ±10 %) GRM033R61C104KE14 0603 Murata C6 120 pF (50 V, C0G, ±5 %) GRM0335C1H121JA01 0603 Murata 47 μF (4 V, X5R, ±20 %) AMK107BBJ476MA-RE 1608 TAIYO YUDEN C8 (Note 4) - - - - R1 100 kΩ (1 %, 1/16 W) MCR01MZPF1003 1005 ROHM C7 R0 (Note 4) R2 Short - - - R3 150 kΩ (1 %, 1/16 W) MCR01MZPF1503 1005 ROHM R4 100 kΩ (1 %, 1/16 W) MCR01MZPF1003 1005 ROHM R5 - - - - R6 - - - - Short - - - (Note 5) (Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor C1 as close as possible to the VIN pin and the GND pin if needed. (Note 2) For the input capacitor C2 and C3, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no less than 4.7 μF. (Note 3) For the bootstrap capacitor C5, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no less than 0.022 μF. (Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor C7 and C8, the loop response characteristics may change. Confirm with the actual application. The total capacitance of 10 μF to 47 x 2 μF is recommended for the output capacitor. (Note 5) R0 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R 0, it is possible to measure the frequency response (phase margin) using a FRA. However, the resistor will not be used in actual application, use this resistor pattern in short-circuit mode. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 27/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ 4. VIN = 5 V, VOUT = 1.0 V – continued Time: 2 µs/div Time: 2 µs/div VOUT: 20 mV/div VOUT: 20 mV/div VSW: 2 V/div VSW: 2 V/div Figure 59. Output Ripple Voltage (IOUT = 0.1 A) 80 Figure 60. Output Ripple Voltage (IOUT = 3.0 A) 180 Gain Phase 40 90 20 45 0 0 -20 -45 -40 -90 -60 -135 -80 1 10 100 Frequency [kHz] Time: 100 µs/div 135 VOUT: 100 mV/div Phase [°] Gain [dB] 60 IOUT: 500 mA/div -180 1000 Figure 61. Frequency Characteristics (IOUT = 3.0 A) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 62. Load Transient Response (IOUT = 0.1 A to 1.0 A) 28/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Application Examples – continued 5. VIN = 5 V, VOUT = 0.6 V Table 11. Specification of Application (VIN = 5 V, VOUT = 0.6 V) Symbol Specification Value Parameter Input Voltage Output Voltage Maximum Output Current VIN 5 V (Typ) VOUT 0.6 V (Typ) IOUTMAX 3.0 A Switching Frequency fSW 1.0 MHz (Typ) Soft Start Time tSS 1 ms (Typ) Temperature Ta 25 °C R3 R4 5 SS FB R2 4 C6 C4 R6 R1 6 EN PGD EN 3 PGD BD9B305QUZ R5 VIN C3 R0 7 VIN SW 2 8 GND EXP-PAD BOOT 1 C1 C2 GND L1 C5 VOUT C8 C7 GND Figure 63. Application Circuit Part No. L1 (Note 1) C2 (Note 2) C1 C3 (Note 2) Table 12. Recommended Component Values (VIN = 5 V, VOUT = 0.6 V) Value Part Name Size Code (mm) Manufacturer 1.0 μH FDSD0518-H-1R0M 5249 Murata 0.1 μF (16V, X5R, ±10 %) GRM033R61C104KE14 0603 Murata 22 μF (10V, X5R, ±20 %) GRM188R61A226ME15 1608 Murata - - - - C4 - - - - C5 (Note 3) 0.1 μF (16V, X5R, ±10 %) GRM033R61C104KE14 0603 Murata C6 120 pF (50 V, C0G, ±5 %) GRM0335C1H121JA01 0603 Murata 47 μF (4 V, X5R, ±20 %) AMK107BBJ476MA-RE 1608 TAIYO YUDEN C8 (Note 4) - - - - R1 100 kΩ (1 %, 1/16 W) MCR01MZPF1003 1005 ROHM R2 Short - - - R3 - - - - R4 100 kΩ (1 %, 1/16 W) MCR01MZPF1003 1005 ROHM R5 - - - - R6 - - - - Short - - - C7 R0 (Note 4) (Note 5) (Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor C1 as close as possible to the VIN pin and the GND pin if needed. (Note 2) For the input capacitor C2 and C3, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no less than 4.7 μF. (Note 3) For the bootstrap capacitor C5, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no less than 0.022 μF. (Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor C7 and C8, the loop response characteristics may change. Confirm with the actual application. The total capacitance of 10 μF to 47 x 2 μF is recommended for the output capacitor. (Note 5) R0 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R 0, it is possible to measure the frequency response (phase margin) using a FRA. However, the resistor will not be used in actual application, use this resistor pattern in short-circuit mode. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 29/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ 5. VIN = 5 V, VOUT = 0.6 V – continued Time: 2 µs/div Time: 2 µs/div VOUT: 20 mV/div VOUT: 20 mV/div VSW: 2 V/div VSW: 2 V/div Figure 64. Output Ripple Voltage (IOUT = 0.1 A) 80 Figure 65. Output Ripple Voltage (IOUT = 3.0 A) 180 Gain Phase 40 90 20 45 0 0 -20 -45 -40 -90 -60 -135 -80 1 10 100 Frequency [kHz] Time: 100 µs/div 135 VOUT: 100 mV/div Phase [°] Gain [dB] 60 IOUT: 500 mA/div -180 1000 Figure 66. Frequency Characteristics (IOUT = 3.0 A) www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 67. Load Transient Response (IOUT = 0.1 A to 1.0 A) 30/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Selection of Components Externally Connected Contact us if not use the recommended component values in Application Examples. 1. Input Capacitor Use ceramic type capacitor for the input capacitor. The input capacitor is used to reduce the input ripple noise and it is effective by being placed as close as possible to the VIN pin. Set the capacitor value so that it does not fall to 4.7 μF considering the capacitor value variances, temperature characteristics, DC bias characteristics, aging characteristics, and etc. The PCB layout and the position of the capacitor may lead to IC malfunction. Refer to the notes on the PCB layout on page 34 to 35 when designing PCB layout. In addition, the capacitor with value 0.1 μF can be connected as close as possible to the VIN pin and the GND pin in order to reduce the high frequency noise. 2. Output Voltage Setting The output voltage can be set by the feedback resistance ratio connected to the FB pin. For stable operation, the parallel resistance of feedback resistors R1 and R2 should be set to 20 kΩ or more. VOUT The output voltage VOUT can be calculated as below. CFB R1 Error Amplifier 𝑉𝑂𝑈𝑇 = 𝑅1 +𝑅2 𝑅2 × 0.6 [V] FB R2 0.6 ≤ 𝑉𝑂𝑈𝑇 ≤ (𝑉𝐼𝑁 × 0.8) [V] 0.6 V (Typ) 1 1 1⁄(𝑅 + 𝑅 ) ≥ 20 [kΩ] 1 2 Figure 68. Feedback Resistor Circuit 3. Soft Start Capacitor (Soft Start Time Setting) The soft start time tSS depends on the value of the capacitor connected to the SS pin. The tSS is 1 ms (Typ) when the SS pin is left floating. The capacitor connected to the SS pin makes tSS more than 1 ms. The tSS and CSS can be calculated using below equation. The CSS should be set in the range between 3300 pF and 0.1 μF. 𝑡𝑆𝑆 = 𝐶𝑆𝑆 ×0.6 𝐼𝑆𝑆 [s] where: 𝐼𝑆𝑆 is the Soft Start Charge Current 1.0 µA (Typ). With CSS = 8200 pF, tSS can be calculated as below. 𝑡𝑆𝑆 = 8200 𝑝𝐹×0.6 1.0 𝜇𝐴 = 4.9 [ms] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 31/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Selection of Components Externally Connected – continued 4. Output LC Filter In order to supply a continuous current to the load, the DC/DC converter requires an LC filter for smoothing the output voltage. Use the inductor with value 1.0 μH to 1.5 μH. VIN IL Inductor saturation current > IOUTMAX + ∆IL/2 L1 ∆IL VOUT Driver Maximum Output Current IOUTMAX COUT t Figure 69. Waveform of Inductor Current Figure 70. Output LC Filter Circuit For example, given that VIN = 5 V, VOUT = 1.8 V, L1 = 1.0 μH, and the switching frequency fSW = 1.0 MHz, Inductor current ΔIL can be represented by the following equation. ∆𝐼𝐿 = 𝑉𝑂𝑈𝑇 × (𝑉𝐼𝑁 − 𝑉𝑂𝑈𝑇 ) × 𝑉 1 𝐼𝑁 ×𝑓𝑆𝑊 ×𝐿1 = 1.15 [A] The rated current of the inductor (Inductor saturation current) must be larger than the sum of the maximum output current IOUTMAX and 1/2 of the inductor ripple current ΔIL. Use ceramic type capacitor for the output capacitor COUT. The capacitance value of COUT is recommended in the range between 10 μF and 47 x 2 μF. COUT affects the output ripple voltage. Select COUT so that it must satisfy the required ripple voltage characteristics. The output ripple voltage can be estimated by the following equation. ∆𝑉𝑅𝑃𝐿 = ∆𝐼𝐿 × (𝑅𝐸𝑆𝑅 + 8×𝐶 1 𝑂𝑈𝑇 ×𝑓𝑆𝑊 ) [V] where: 𝑅𝐸𝑆𝑅 is the Equivalent Series Resistance (ESR) of the output capacitor. For example, given that COUT = 47 μF and RESR = 3 mΩ, ΔVRPL can be calculated as below. 1 ∆𝑉𝑅𝑃𝐿 = 1.15 𝐴 × (3 𝑚𝛺 + 8×47 𝜇𝐹×1 𝑀𝐻𝑧) = 6.5 [mV] www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 32/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ 4. Output LC Filter – continued In addition, the total capacitance connected to VOUT needs to satisfy the value obtained by the following equation. 𝐶𝑂𝑈𝑇𝑀𝐴𝑋 < 𝑡𝑆𝑆𝑀𝐼𝑁 × (3.1 + 𝑉𝑂𝑈𝑇 ∆𝐼𝐿 2 − 𝐼𝑂𝑈𝑇𝑆𝑆 ) [F] where: 𝑡𝑆𝑆𝑀𝐼𝑁 is the minimum soft start time. 𝑉𝑂𝑈𝑇 is the output voltage. ∆IL is the inductor current. IOUTSS is the maximum output current during soft start. For example, given that VIN = 5 V, VOUT = 1.8 V, L1 = 1.0 µH, fSW = 1 MHz (Typ), tSSMIN = 0.6 ms (CSS = OPEN), and IOUTSS = 3 A, COUTMAX can be calculated as below. 𝐶𝑂𝑈𝑇𝑀𝐴𝑋 < 0.6 𝑚𝑠 1.8 𝑉 × (3.1 + 1.15 𝐴 2 − 3 𝐴) = 225 [µF] If the total capacitance connected to VOUT is larger than COUTMAX, over current protection may be activated by the inrush current at startup and prevented to turn on the output. Confirm this on the actual application. 5. FB Capacitor The Constant On-time Control required the sufficient ripple voltage on FB voltage for the operation stability. This device is designed to correspond to low ESR output capacitors by injecting the ripple voltage to FB voltage inside the IC. The FB capacitor CFB (Figure 68) should be set within the range of the following expression in order to inject an appropriate ripple. 𝑉𝑂𝑈𝑇 ×(1−𝑉𝑂𝑈𝑇 ⁄𝑉𝐼𝑁 ) 𝑓𝑆𝑊 ×21×103 < 𝐶𝐹𝐵 < 𝑉𝑂𝑈𝑇 ×(1−𝑉𝑂𝑈𝑇 ⁄𝑉𝐼𝑁 ) 𝑓𝑆𝑊 ×3.3×103 [F] where: 𝑉𝐼𝑁 is the input voltage. 𝑉𝑂𝑈𝑇 is the output voltage. fSW is the switching frequency 1.0 MHz (Typ). Load transient response and the loop stability depends on L1, COUT, and CFB. Actually, these characteristics may change depending on PCB layout, wiring, the type of components, and the conditions (temperature, etc.). Be sure to check them on the actual application. 6. Bootstrap Capacitor The bootstrap capacitor 0.1μF is recommended. Connect the capacitor between the SW pin and the BOOT pin. For the capacitance, take temperature characteristics, DC bias characteristics, and etc. into consideration to set to the actual capacitance of no less than 0.022 μF. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 33/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ PCB Layout Design PCB layout design for DC/DC converter is very important. Appropriate layout can avoid various problems concerning power supply circuit. Figure 71-a to Figure 71-c show the current path in a buck DC/DC converter circuit. The Loop 1 in Figure 71-a is a current path when H-side switch is ON and L-side switch is OFF, the Loop 2 in Figure 71-b is when H-side switch is OFF and L-side switch is ON. The thick line in Figure 71-c shows the difference between Loop1 and Loop2. The current in thick line change sharply each time the switching element H-side and L-side switch change from OFF to ON, and vice versa. These sharp changes induce a waveform with harmonics in this loop. Therefore, the loop area of thick line that is consisted by input capacitor and IC should be as small as possible to minimize noise. For more details, refer to application note of switching regulator series “PCB Layout Techniques of Buck Converter”. Loop1 VIN H-side Switch VOUT L CIN COUT L-side Switch GND GND Figure 71-a. Current Path when H-side Switch = ON, L-side Switch = OFF VIN VOUT L H-side Switch CIN COUT Loop2 L-side Switch GND GND Figure 71-b. Current Path when H-side Switch = OFF, L-side Switch = ON VIN VOUT L CIN COUT High-Side FET Low-Side FET GND GND Figure 71-c. Difference of Current and Critical Area in Layout www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 34/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ PCB Layout Design – continued When designing the PCB layout, pay attention to the following points: • Connect the input capacitor CIN1 and CIN2 as close as possible to the VIN pin and GND pin on the same plane as the IC. • Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the inductor pattern L1 as thick and as short as possible. • Feedback line connected to the FB pin far from the SW nodes. • Place the output capacitor COUT away from input capacitor CIN1 and CIN2 to avoid harmonics noise from the input. • Separate the reference ground and the power ground and connect them through VIA. The reference ground should be connected to the power ground that is close to the output capacitor COUT. It is because COUT has less high frequency switching noise. • R0 is provided for the measurement of feedback frequency characteristics (optional). By inserting a resistor into R0, it is possible to measure the frequency characteristics of feedback (phase margin) using FRA etc. R 0 is short-circuited for normal use. R2 RPGD 5 SS FB 4 CSS R1 6 EN PGD EN 3 CFB PGD BD9B305QUZ R0 L1 VIN 7 CIN2 (22 μF) VIN SW 2 VOUT CIN1 (0.1 μF) CBOOT (0.1 μF) 8 GND GND EXP-PAD BOOT COUT (47 μF) 1 GND Figure 72. Application Circuit CIN1 RPGD R0 C FB R1 Pin 1 BD9B305QUZ VOUT L1 CBOOT COUT C IN2 VIN R2 CSS Reference Ground Power Ground Thermal VIA Signal VIA Figure 73. Example of PCB Layout www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 35/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ I/O Equivalence Circuits 1. BOOT 2. SW BOOT VIN VIN BOOT SW 93 Ω SW 3. PGD 4. FB VIN PGD 10 kΩ FB 5. SS 6. EN VIN VIN 10 kΩ SS 10 kΩ EN 10 kΩ 10 kΩ (Note) Resistor values are typical. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 36/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Operational Notes 1. Reverse Connection of Power Supply Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins. 2. Power Supply Lines Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. Ground Voltage Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However, pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few. 4. Ground Wiring Pattern When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance. 5. Recommended Operating Conditions The function and operation of the IC are guaranteed within the range specified by the recommended operating conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical characteristics. 6. Inrush Current When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 7. Testing on Application Boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 8. Inter-pin Short and Mounting Errors Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. 9. Unused Input Pins Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power supply or ground line. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 37/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Operational Notes – continued 10. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Resistor Transistor (NPN) Pin A Pin B C E Pin A N P+ P N N P+ N Pin B B Parasitic Elements N P+ N P N P+ B N C E Parasitic Elements P Substrate P Substrate GND GND Parasitic Elements GND Parasitic Elements GND N Region close-by Figure 74. Example of Monolithic IC Structure 11. Ceramic Capacitor When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. 12. Thermal Shutdown Circuit (TSD) This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage. 13. Over Current Protection Circuit (OCP) This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in applications characterized by continuous operation or transitioning of the protection circuit. www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 38/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Ordering Information B D 9 B 3 0 5 Q U Z Package VMMP08LZ2020 - E2 Packaging and forming specification E2: Embossed tape and reel Marking Diagram VMMP08LZ2020 (TOP VIEW) Part Number Marking D9B LOT Number 3 0 5 Pin 1 Mark www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 39/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Physical Dimension and Packing Information Package Name www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 VMMP08LZ2020 40/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 BD9B305QUZ Revision History Date Revision 08.Mar.2019 001 Changes New Release www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 41/41 TSZ02201-0F3F0AJ00250-1-2 08.Mar.2019 Rev.001 Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used. However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PGA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl 2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. 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Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice-PGA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001