Datasheet
7.0V to 36V Input, 2.5A Integrated MOSFET
Single Synchronous Buck DC/DC Converter
BD9E301EFJ-LB
General Description
Key Specifications
This is the product guarantees long time support in
Industrial market.
BD9E301EFJ-LB is a synchronous buck switching regulator
with built-in power MOSFETs. It is capable of an output
current of up to 2.5A. It is a current mode control DC/DC
converter and features high-speed transient response.
Phase compensation can also be set easily.
Package
Features
Input Voltage Range:
7.0V to 36V
Output Voltage Range:
1.0V to VIN×0.7V
Output Current:
2.5A (Max)
Switching Frequency:
570kHz (Typ)
High-Side MOSFET ON-Resistance: 170mΩ (Typ)
Low-Side MOSFET ON-Resistance: 140mΩ (Typ)
Standby Current:
0μA (Typ)
W (Typ) x D (Typ) x H (Max)
4.90mm x 6.00mm x 1.00mm
HTSOP-J8
Long Time Support Product for Industrial
Applications.
Synchronous single DC/DC converter.
Over-Current Protection.
Short Circuit Protection.
Thermal Shutdown Protection.
Undervoltage Lockout Protection.
Soft Start.
HTSOP-J8 package (Exposed Pad).
Applications
Industrial Equipment.
Power supply for FA’s industrial device using 24V
bass.
Consumer applications such as home appliance.
Distribution type power supply system for 12V, and
24V.
HTSOP-J8
Typical Application Circuit
VIN
24V
2 VIN
BD9E301EFJ-LB
BOOT 1
0.1μF
10μF
VOUT
SW 8
6.8μH
Enable
22μF×2
3 EN
COMP
AGND
PGND
FB
6
4
7
5
12kΩ
15kΩ
3kΩ
4700pF
Figure 1. Application circuit
○Product structure：Silicon monolithic integrated circuit.
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Pin Configuration
(TOP VIEW)
BOOT
1
VIN
2
8
SW
7
PGND
E-Pad
EN
3
6
COMP
AGND
4
5
FB
Figure 2. Pin assignment
Pin Description(s)
Pin No
Pin Name
Description
1
BOOT
2
VIN
Power supply terminal for the switching regulator and control circuit.
Connecting a 10µF ceramic capacitor is recommended.
3
EN
Turning this terminal signal low-level (0.8V or lower) forces the device to enter the shut
down mode. Turning this terminal signal high-level (2.5V or higher) enables the device.
This terminal must be terminated.
4
AGND
5
FB
Connect a bootstrap capacitor of 0.1µF between this terminal and SW terminal.
The voltage of this capacitor is the gate drive voltage of the high-side MOSFET.
Ground terminal for the control circuit.
Inverting input node for the gm error amplifier.
See page 22 on how to calculate the resistance of the output voltage setting.
6
COMP
Input terminal for the gm error amplifier output and the output switch current comparator.
Connect a frequency phase compensation component to this terminal.
See page 23 on how to calculate the resistance and capacitance for phase
compensation.
7
PGND
Ground terminal for the output stage of the switching regulator.
8
SW
-
E-Pad
Switch node. This terminal is connected to the source of the high-side MOSFET and
drain of the low-side MOSFET. Connect a bootstrap capacitor of 0.1µF between this
terminal and BOOT terminal. In addition, connect an inductor considering the direct
current superimposition characteristic.
Exposed pad. Connecting this to the internal PCB ground plane using multiple vias
provides excellent heat dissipation characteristics.
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Block Diagram
EN
3
3V
5V
VREG3
1
BOOTREG
VREG
BOOT
SCP
OVP
UVLO
OSC
VIN
OCP
TSD
2
RCP
VIN
S
VOUT
DRIVER
8
ERR
SW
LOGIC
FB
5
SLOPE
COMP
PWM
R
6
7
PGND
SOFT
START
4
AGND
Figure 3. Block diagram
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Description of Block
VREG3
Block creating internal reference voltage 3V (Typ).
VREG
Block creating internal reference voltage 5V (Typ).
BOOTREG
Block creating gate drive voltage.
TSD
This is the thermal shutdown block. Thermal shutdown circuit shuts down the whole system if temperature exceeds 175°C
(Typ). When the temperature decreases, it returns to normal operation with hysteresis of 25°C (Typ).
UVLO
This is the under voltage lock-out block. IC shuts down when VIN is under 6.4V (Typ). The threshold voltage has a
hysteresis of 200mV (Typ).
ERR
This circuit compares the feedback voltage at the output to the reference voltage. The output of this circuit is the COMP
terminal voltage and this determines the switching duty. Also, because of soft start during start-up, COMP terminal voltage
is controlled by internal slope voltage.
OSC
Block generating oscillation frequency.
SLOPE
This circuit creates a triangular wave from generated clock in OSC. The voltage converted from current sense signal of
high side MOSFET and the triangular wave is sent to PWM comparator.
PWM
This block determines the switching duty by comparing the output COMP terminal voltage of error amplifier and output of
SLOPE block.
DRIVER LOGIC
This is the DC/DC driver block. Input to this block is signal from PWM and output drives the MOSFETs.
SOFT START
This circuit prevents the overshoot of output voltage and In-rush current by forcing the output voltage to rise slowly, thus,
avoiding surges in current during start-up.
OCP
This block limits the current flowing in high side MOSFET for each cycle of switching frequency during over-current.
RCP
This block limits the current flowing in low side MOSFET for each cycle of switching frequency during over-current.
SCP
The short circuit protection block compares the FB terminal voltage with the internal standard voltage VREF. When the FB
terminal voltage has fallen below 0.85V (Typ) and remained in that state for 1.0msec (Typ), SCP activates and stops the
operation for 16msec (Typ) and subsequently initiates a restart.
OVP
Over voltage protection function (OVP) compares FB terminal voltage with the internal standard voltage VREF. When the
FB terminal voltage exceeds 1.30V (Typ), it turns output MOSFETs off. When output voltage drops until it reaches the
hysteresis, it will return to normal operation.
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Absolute Maximum Ratings (Ta = 25°C)
Parameter
Symbol
Rating
Unit
Supply Voltage
VIN
-0.3 to +40
V
EN Input Voltage
VEN
-0.3 to +40
V
VBOOT
-0.3 to +45
V
⊿VBOOT
-0.3 to +7
V
VFB
-0.3 to +7
V
VCOMP
-0.3 to +7
V
VSW
-0.5 to VIN + 0.3
V
Allowable Power Dissipation
Pd
3.75 (Note 1)
W
Operating Junction Temperature Range
Tj
-40 to +150
C
Tstg
-55 to +150
C
Voltage from GND to BOOT
Voltage from SW to BOOT
FB Input Voltage
COMP Input Voltage
SW Input Voltage
Storage Temperature Range
(Note 1) Derating in done 30.08 mW/°C for operating above Ta≧25°C (Mount on 4-layer 70.0mm x 70.0mm x 1.6mm board)
Caution1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Caution2: Reliability is decreased at junction temperature greater than 125C.
Recommended Operating Conditions
Parameter
Symbol
Supply Voltage
VIN
Output Current
IOUT
Output Voltage Range
VRANGE
Min
Rating
Typ
Max
7.0
-
36
V
0
-
2.5
A
-
VIN × 0.7
V
(Note 2)
1.0
Unit
(Note 2) Please use it in I/O voltage setting of which output pulse width does not become 150nsec (Typ) or less. See the page 22 for how to calculate the
resistance of the output voltage setting.
Electrical Characteristics (Unless otherwise specified VIN=24V VEN=3V Ta=25°C)
Parameter
Symbol
Min
Limit
Typ
Max
Unit
Conditions
Supply Current in Operating
IOPR
-
1.5
2.5
mA
VFB = 1.1V
No switching
Supply Current in Standby
ISTBY
-
0
10
µA
VEN = 0V
Reference Voltage
VFB
0.98
1.00
1.02
V
FB Input Current
IFB
-1
0
1
µA
Switching frequency
FOSC
484
570
656
kHz
Maximum Duty ratio
Maxduty
85
90
95
%
High-side FET on-resistance
RONH
-
170
-
mΩ
ISW = 100mA
Low-side FET on-resistance
RONL
-
140
-
mΩ
ISW = 100mA
Over Current limit
ILIMIT
-
5.0
-
A
UVLO detection voltage
VUVLO
6.1
6.4
6.7
V
UVLO hysteresis voltage
VUVLOHYS
100
200
300
mV
EN high-level input voltage
VENH
2.5
-
VIN
V
EN low-level input voltage
VENL
-
-
0.8
V
EN Input current
IEN
2.1
4.2
8.4
µA
Soft Start time
TSS
1.5
3.0
6.0
msec
●
●
VFB = 0V
VIN falling
VEN = 3V
EN rising to
FB=0.85V
VFB : FB Input Voltage. VEN : EN Input Voltage.
Pd should not be exceeded.
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Typical Performance Curves
3.0
1.0
VIN =36V
0.8
VIN=24V
Stand by Current[µA]
Operating Current[mA]
2.5
2.0
1.5
1.0
VIN =12V
VIN =7V
VIN =36V
0.6
VIN =24V
VIN =12V
0.4
VIN =7V
0.2
0.5
0.0
0.0
-40
-20
0
20
40
60
80
100 120
-40
-20
0
Temperature[℃]
20
40
60
80
100 120
Temperature[℃]
Figure 5. Stand-by Current vs Junction Temperature
Figure 4. Operating Current vs Junction Temperature
1.0
1.02
VIN =24V
VIN =36V
0.8
VIN =24V
FB Input Current[µA]
Voltage Reference[V]
0.6
1.01
1.00
VIN =7V
0.99
VIN =12V
0.4
0.2
0.0
-0.2
-0.4
-0.6
-0.8
0.98
-1.0
-40
-20
0
20
40
60
80
100 120
-40
Temperature[℃]
0
20
40
60
80
100 120
Temperature[℃]
Figure 6. FB Voltage Reference vs Junction Temperature
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Figure 7. FB Input Current vs Junction Temperature
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Typical Performance Curves
- continued
655
95
VIN =7V
638
94
VIN =12V
93
VIN =24V
VIN =36V
VIN =7V
604
Maximum Duty[%]
Switching Frequency[kHz]
621
VIN =36V
587
570
553
92
VIN =12V
90
89
536
88
519
87
502
86
485
-40
85
-20
0
20
40
60
80
100
-40
120
-20
0
20
Temperature[℃]
40
60
80
100 120
Temperature[℃]
Figure 8. Switching Frequency vs Junction Temperature
Figure 9. Maximum Duty vs Junction Temperature
300
350
VIN =24V
Low Side MOSFET ON-Resistance[mΩ]
VIN =24V
High Side MOSFET ON-Resistance[mΩ]
VIN =24V
91
300
250
200
150
100
250
200
150
100
50
0
50
-40
-20
0
20
40
60
80
-40
100 120
0
20
40
60
80
100 120
Temperature[℃]
Temperature[℃]
Figure 10. High Side MOSFET ON - Resistance vs
Junction Temperature
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Figure 11. Low Side MOSFET ON -Resistance vs
Junction Temperature
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Typical Performance Curves
- continued
6.5
6.9
VOUT =5V
6.0
6.8
Tj =-40°C
VIN Sweep up
6.7
VIN Input Voltage[V]
Current limit[A]
5.5
5.0
4.5
Tj =150°C
4.0
Tj =25°C
3.5
6.6
6.5
6.4
VIN Sweep down
6.3
3.0
6.2
2.5
6.1
6
9
12
15
18
21
24
27
30
33
36
-40
-20
0
20
Input Voltage[V]
40
60
80
100
120
Temperature[℃]
Figure 12. Current Limit vs Input Voltage
Figure 13. UVLO Threshold vs Junction Temperature
300
2.4
275
2.2
EN Sweep up
VEN Input Voltage[V]
UVLO Hysteresis[mV]
250
225
200
175
2.0
1.8
1.6
1.4
EN Sweep down
150
1.2
125
1.0
100
0.8
-40
-20
0
20
40
60
80
100 120
-40
Temperature[℃]
0
20
40
60
80
100 120
Temperature[°C]
Figure 14. UVLO Hysteresis vs Junction Temperature
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Figure 15. EN Threshold vs Junction Temperature
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Typical Performance Curves
- continued
8.0
5.0
VIN =36V
EN=3V
VIN =24V
7.0
VIN =12V
Soft Start Time[ms]
EN Input Current[µA]
4.0
6.0
5.0
4.0
VIN =7V
3.0
2.0
3.0
1.0
2.0
-40
-20
0
20
40
60
80
-40
100 120
0
20
40
60
80
100 120
Temperature[°C]
Temperature[℃]
Figure 16. EN Input Current vs Junction Temperature
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Figure 17. Soft Start Time vs Junction Temperature
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Typical Performance Curves
- continued
100
100
90
90
80
80
VIN = 7V
70
Efficiency[%]
Efficiency[%]
70
VIN = 12V
60
VIN = 18V
50
VIN = 24V
40
50
30
20
20
EN = 3V
VOUT = 3.3V
VIN = 24V
40
30
10
VIN = 12V
60
EN = 3V
VOUT = 5.0V
10
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.5
1.0
1.5
2.0
2.5
Output Current[A]
Output Current[A]
Figure 18. Efficiency vs Output Current
(VOUT = 3.3V, L = 6.8µH)
Figure 19. Efficiency vs Output Current
(VOUT = 5.0V, L = 6.8µH)
100
90
80
VIN = 18V
Efficiency[%]
70
VIN = 24V
60
50
VIN = 36V
40
30
20
EN = 3V
VOUT = 12V
10
0
0.0
0.5
1.0
1.5
2.0
2.5
Output Current[A]
Figure 20. Efficiency vs Output Current
(VOUT = 12V, L = 6.8µH)
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Typical Performance Curves
- continued
Time=1ms/div
Time=1ms/div
VIN=10V/div
VIN=10V/div
EN=10V/div
EN=10V/div
VOUT=2V/div
VOUT=2V/div
SW=10V/div
SW=10V/div
Figure 21. Power Up (VIN = EN)
(VOUT = 5.0V)
Figure 22. Power Down (VIN = EN)
(VOUT = 5.0V)
Time=1ms/div
Time=1ms/div
VIN=10V/div
VIN=10V/div
EN=2V/div
EN=2V/div
VOUT=2V/div
VOUT=2V/div
SW=10V/div
SW=10V/div
Figure 23. Power Up (EN = 0V→5V)
(VOUT = 5.0V)
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Figure 24. Power Down (EN = 5V→0V)
(VOUT = 5.0V)
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Typical Performance Curves
- continued
Time=1μs/div
Time=1μs/div
VOUT=20mV/div
VOUT=20mV/div
SW=10V/div
SW=10V/div
Figure 25. VOUT Ripple
(VIN = 24V, VOUT = 5V, IOUT = 0A)
Figure 26. VOUT Ripple
(VIN = 24V, VOUT = 5V, IOUT = 2.5A)
Time=1μs/div
Time=1μs/div
VIN=100mV/div
VIN=100mV/div
SW=10V/div
SW=10V/div
Figure 27. VIN Ripple
(VIN = 24V, VOUT = 5V, IOUT = 0A)
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Figure 28. VIN Ripple
(VIN = 24V, VOUT = 5V, IOUT = 2.5A)
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Typical Performance Curves
- continued
Time=1μs/div
Time=1μs/div
IL=1.0A/div
IL=1.0A/div
SW=5V/div
SW=5V/div
Figure 29. Switching Waveform
(VIN = 12V, VOUT = 5V, IOUT = 2.5A)
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Figure 30. Switching Waveform
(VIN = 24V, VOUT = 5V, IOUT = 2.5A)
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- continued
2.0
2.0
1.5
1.5
Output Voltage Change[%]
Output Voltage Change[%]
Typical Performance Curves
1.0
IOUT=0A
0.5
0.0
-0.5
IOUT=2.5A
-1.0
1.0
IOUT=0A
0.5
0.0
-0.5
IOUT=2.5A
-1.0
VOUT = 3.3V
-1.5
VOUT = 5.0V
-1.5
-2.0
-2.0
6
9
12
15
18
21
24
27
30
33
36
VIN Input Voltage[V]
6
9
12
15
18
21
24
27
30
33
36
VIN Input Voltage[V]
Figure 31. VOUT Line Regulation
Figure 32. VOUT Line Regulation
2.0
Output Voltage Change[%]
1.5
1.0
IOUT=0A
0.5
0.0
-0.5
-1.0
IOUT=2.5A
VOUT = 12V
-1.5
-2.0
14 16 18 20 22 24 26 28 30 32 34 36
VIN Input Voltage[V]
Figure 33. VOUT Line Regulation
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- continued
2.0
2.0
1.5
1.5
Output Voltage Change[%]
Output Voltage Change[%]
Typical Performance Curves
1.0
0.5
0.0
-0.5
-1.0
VIN = 24V
VOUT = 3.3V
-1.5
1.0
0.5
0.0
-0.5
-1.0
VIN = 24V
VOUT = 5.0V
-1.5
-2.0
-2.0
0.0
0.5
1.0
1.5
2.0
2.5
Output Current[A]
0.0
0.5
1.0
1.5
2.0
2.5
Output Current[A]
Figure 35. VOUT Load Regulation
Figure 34. VOUT Load Regulation
2.0
Output Voltage Change[%]
1.5
1.0
0.5
0.0
-0.5
-1.0
VIN=24V
VOUT=12V
-1.5
-2.0
0.0
0.5
1.0
1.5
2.0
2.5
Output Current[A]
Figure 36. VOUT Load Regulation
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– continued
80
180
80
135
60
40
90
40
20
45
20
45
0
0
0
0
VIN=12V
VOUT=3.3V
VIN=24V
VOUT=5V
-20
Gain[dB]
phase
Phase[deg]
Gain[dB]
60
180
135
phase
90
-20
-45
-45
gain
gain
-40
-90
-40
-90
-60
-135
-60
-135
-180
1M
-80
-80
100
1K
Phase[deg]
Typical Performance Curves
10K
100K
100
1K
100K
-180
1M
Frequency[Hz]
Frequency[Hz]
Figure 37. Loop Response
(VIN=12V, VOUT=3.3V, IOUT=2.5A, COUT=Ceramic22μF×2)
Figure 38. Loop Response
(VIN=24V, VOUT=5V, IOUT=2.5A, COUT=Ceramic22μF×2)
Time=1ms/div
Time=1ms/div
VOUT=100mV/div
VOUT=100mV/div
IOUT=1.0A/div
IOUT=1.0A/div
Figure 39. Load Transient Response IOUT=0A – 2.5A
(VIN=12V, VOUT=3.3V, COUT=Ceramic22μF×2)
0μF×3)
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TSZ22111•15•001
10K
Figure 40. Load Transient Response IOUT=0A – 2.5A
(VIN=24V, VOUT=5.0V, COUT=Ceramic22μF×2)
=Ceramic10μF×3)
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Function Description
1. Enable Control
The IC shutdown can be controlled by the voltage applied to the EN terminal. When EN voltage reaches 2.5V (Typ), the
internal circuit is activated and the IC starts up. Setting the shutdown interval (Low Level interval) of EN to 100µs or longer
will enable the shutdown control with the EN terminal.
VEN
EN terminal
VENH
VENL
t
0
VOUT
Output Voltage
VOUT×0.85
t
0
TSS
Figure 41. Timing Chart with Enable Control
2. Protective Functions
The protective circuits are intended for the prevention of damages caused by unexpected accidents. Do not use
them for continuous protective operation.
(1) Short Circuit Protection (SCP)
The short circuit protection block compares the FB terminal voltage with the internal reference voltage VREF. When
the FB terminal voltage has fallen below 0.85V (Typ) and remained in that state for 1.0msec (Typ), SCP activates and
stops the operation for 16msec (Typ) and subsequently initiates a restart.
Table 1. Short Circuit Protection Function
EN pin
FB pin
Short circuit protection
Switching Frequency
0.30V (Typ)≧FB
2.5V or higher
142.5kHz (Typ)
0.30V (Typ)＞B≧0.85V (Typ)
Enabled
285kHz (Typ)
FB＞0.85V (Typ)
0.8V or lower
570kHz (Typ)
-
Disabled
OFF
Soft start
3.0msec (typ.)
VOUT
SCP detection time
1.0msec (typ.)
SCP detection time
1.0msec (typ.)
1.0V
FB terminal
SCP threshold voltage：
0.85Ｖ(typ.)
SCP detection released
Upper MOSFET
gate
LOW
Lower MOSFET
gate
LOW
OCP
Threshold
Inductor
current
IC internal
SCP signal
16msec (typ.)
SCP reset
Figure 42. Short Circuit Protection (SCP) Timing Chart
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(2) Under Voltage Lockout Protection (UVLO)
The under voltage lockout protection circuit monitors the VIN terminal voltage.
The operation enters standby when the VIN terminal voltage is 6.4V (Typ) or lower.
The operation starts when the VIN terminal voltage is 6.6V (Typ) or higher.
VIN
UVLO OFF
hys
UVLO ON
0V
VOUT
Soft start
FB
terminal
High-side
MOSFET gate
Low-side
MOSFET gate
Normal operation
UVLO
Normal operation
Figure 43. UVLO Timing Chart
(3) Thermal Shutdown (TSD)
When the chip temperature exceeds Tj = 175C, the DC/DC converter output is stopped. The thermal shutdown
circuit is intended for shutting down the IC from thermal runaway in an abnormal state with the temperature
exceeding Tjmax = 150C. It is not meant to protect or guarantee the soundness of the application. Do not use the
function of this circuit for application protection design.
(4) Over Current Protection (OCP)
The over-current protection function is realized by using the current mode control to limit the current that flows
through the high-side MOSFET at each cycle of the switching frequency.
(5) Reverse Current Protection (RCP)
The reverse current protection function is realized by using the current mode control to limit the current that flows
through the low-side MOSFET at each cycle of the switching frequency.
(6) Over Voltage Protection (OVP)
Over voltage protection function (OVP) compares FB terminal voltage with internal standard voltage VREF. When the
FB terminal voltage exceeds 1.30V (Typ), it turns output MOSFETs off. When output voltage drops until it reaches the
hysteresis, it will return to normal operation.
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Application Example
CBOOT
L
1
BOOT
2
VIN
3
EN
SW
8
PGND
7
COMP
6
FB
5
COUT
VOUT
VIN
BD9E301EFJ-LB
C2
R3
R1
CIN
4
AGND
C1
R2
Figure 44. Application Circuit
Table 2. Recommendation Component Valves
VIN
VOUT
CIN
CBOOT
L
R1
R2
R3
C1
C2
COUT
10μF
0.1μF
4.7μH
6.8kΩ
3.0kΩ
6.8kΩ
6800pF
12V
3.3V
10μF
0.1μF
4.7μH
6.8kΩ
3.0kΩ
6.8kΩ
6800pF
Ceramic
22μF×2
Ceramic
10μF×3
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10μF
0.1μF
4.7μH
6.8kΩ
3.0kΩ
6.8kΩ
6800pF
Ceramic 10μF
and
Aluminum
100μF
19/30
10μF
0.1μF
6.8μH
12kΩ
3.0kΩ
15kΩ
4700pF
24V
5V
10μF
0.1μF
6.8μH
12kΩ
3.0kΩ
15kΩ
4700pF
Ceramic
22μF×2
Ceramic
10μF×3
10μF
0.1μF
6.8μH
12kΩ
3.0kΩ
15kΩ
4700pF
Ceramic 10μF
and
Aluminum
100μF
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Selection of Components Externally Connected
1. Output LC Filter
The DC/DC converter requires an LC filter for smoothing the output voltage in order to supply a continuous current to the
load. Selecting an inductor with a large inductance causes the ripple current ∆IL that flows into the inductor to be small,
decreasing the ripple voltage generated in the output voltage, but it is not advantageous in terms of the load transient
response characteristic. Selecting an inductor with a small inductance improves the transient response characteristic but
causes the inductor ripple current to be large, which increases the ripple voltage in the output voltage, showing a trade-off
relationship. Here, select an inductance so that the size of the ripple current component of the inductor will be 20% to 50%
of the average output current (average inductor current).
VIN
IL
Inductor saturation current > IOUTMAX +⊿IL /2
⊿IL
IOUTMAX
L
Driver
VOUT
COUT
Average inductor current
Figure 45. Waveform of current through inductor
Figure 46. Output LC filter circuit
Computation with VIN = 24V, VOUT = 5V, L = 6.8μH, switching frequency FOSC = 570kHz, the method is as below.
Inductor ripple current
ΔIL = V OUT × (V IN - V OUT ) ×
1
= 1.0 [A]
V IN × FOSC × L
where :
ΔIL is the inductor ripple current
FOSC is the swithing frequency
L is the inductor
V IN is the input voltage
V OUT is the output voltage
Also for saturation current of inductor, select the one with larger current than maximum output current added by 1/2 of
inductor ripple current ∆IL.
Output capacitor COUT affects output ripple voltage characteristics. Select output capacitor COUT so that necessary ripple
voltage characteristics are satisfied.
Output ripple voltage can be expressed in the following method.
ΔV RPL = ΔI L × (RESR +
1
8 × C OUT × FOSC
) [V]
where :
ΔV RPL is the output ripple voltage
RESR is the serial equivalent series resistance
C OUT is the output capacitor
With COUT = 44µF, RESR = 10mΩ the output ripple voltage is calculated as
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ΔV RPL = 1.0 × (10m +
1
) = 15 [mv]
8 × 44μ × 570k
* When selecting the value of the output capacitor COUT, please note that the value of capacitor CLOAD will add up to
the value of COUT to be connected to VOUT.
Charging current to flow through the CLOAD, COUT and the IC startup, must be completed within the soft-start time this
charge. Over-current protection circuit operates when charging is continued beyond the soft-start time, the IC may not
start. Please consider in the calculation the condition that the lower maximum value capacitor CLOAD that can be
connected to VOUT (max) is other than COUT.
Inductor ripple current maximum value of start-up (ILSTART)
<
Over Current Protection Threshold 3.8 [A](min)
Inductor ripple current maximum value of start-up (ILSTART) can be expressed in the following method.
ILSTART = Output maximum load current(IOMAX) + Charging current to the output capacitor (ICAP) +
⊿IL
2
[mV]
Charging current to the output capacitor (ICAP) can be expressed in the following method.
I CAP =
(C OUT + C LOAD ) × V OUT
[A]
T SS
where :
C OUT is the output capacitance
C LOAD is the output load capacitance
T SS is the soft start time
From the above equation, VIN = 24V, VOUT = 5V, L = 4.7μH, IOMAX = 2.5A (max), switching frequency FOSC = 484kHz (min),
the output capacitor COUT = 44μF, TSS = 1.5ms soft-start time (min), it becomes the following equation when calculating
the maximum output load capacitance CLOAD (max) that can be connected to VOUT.
C LOAD (max) <
(3.8 - I OMAX - ΔI L /2) × TSS
- C OUT = 165
V OUT
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2. Output Voltage Set Point
The output voltage value can be set by the feedback resistance ratio.
VOUT =
VOUT
R1
－
FB
R2
R1 + R 2
× 1.0 [V]
R2
※ Minimum pulse range that can be produced at the output
stably through all the load area is 150nsec for
BD9E301EFJ-LB.
Use input/output condition which satisfies the following
method.
ERR
＋
1.0V
V OUT
150(nsec) ≤
V IN × FOSC
Figure 47. Feedback Resistor Circuit
3. Input voltage start-up
VIN
VIN ≧
UVLO
release
（6.6Vtyp.)
VOUT×0.85
0.7
VOUT
VOUT×0.85
TSS
Figure 48. Input Voltage Start-up Time
Soft-start function is designed for the IC so that the output voltage will start according to the time it was decided internally.
After UVLO release, the output voltage range will be less than 70% of the input voltage at soft-start operation. Please be
sure that the input voltage of the soft-start after startup is as follows.
V × 0.85
V IN ≥ OUT
[V]
0.7
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4. Phase Compensation
A current mode control buck DC/DC converter is a two-pole, one-zero system. The two poles are formed by an error
amplifier and load and the one zero point is added by the phase compensation. The phase compensation resistor RCMP
determines the crossover frequency FCRS where the total loop gain of the DC/DC converter is 0 dB. The high value of this
crossover frequency FCRS provides a good load transient response characteristic but inferior stability. Conversely,
specifying a low value for the crossover frequency FCRS greatly stabilizes the characteristics but the load transient
response characteristic is impaired.
(1) Selection of Phase Compensation Resistor RCMP
The phase compensation resistance RCMP can be determined by using the following equation.
RCMP =
2π × V OUT × FCRS × C OUT
[Ω]
V FB × G MP × G MA
where :
V OUT is the output voltage
FCRS is the crossover frequency
C OUT is the output capacitance
V FB is the feedback reference voltage (1.0 V (Typ))
G MP is the current sense gain (7 A/V (Typ))
G MA is the error amplifier transconductance (150 μA/V (Typ))
(2) Selection of phase compensation capacitance CCMP
For stable operation of the DC/DC converter, inserting a zero point under 1/6 of the zero crossover frequency cancels
the phase delay due to the pole formed by the load often, thus, providing favorable characteristics.
The phase compensation capacitance CCMP can be determined by using the following equation.
C CMP =
1
[F]
2π × RCMP × FZ
where
FZ is the
Zero point inserted
(3) Loop stability
To ensure the stability of the DC/DC converter, make sure that a sufficient phase margin is provided. Phase margin
of at least 45 degrees in the worst conditions is recommended. The feed forward capacitor CRUP is used for the
purpose of forming a zero point together with the resistor RUP to increase the phase margin within the limited
frequency range. Using a CRUP is effective when the RUP resistance is larger than the combined parallel resistance of
RUP and RDW.
VOUT
A
(a)
Gain [dB]
RUP
CRUP
FB
RDW
GBW(b)
【dB】
COMP
0
Phase[deg]
CCMP
1.0V
Phase
【°】
RCMP
－90
－90°
PHASE MARGIN
－180°
－180
f
Figure 49. Phase compensation circuit
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f
FCRS
0
Figure 50. Bode plot
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PCB Layout Design
In buck DC/DC converters, a large pulsed current flows in two loops. The first loop is the one into which the current flows
when the High Side FET is turned on. The flow starts from the input capacitor CIN, runs through the FET, inductor L and
output capacitor COUT and back to ground of CIN via ground of COUT. The second loop is the one into which the current flows
when the Low Side FET is turned on. The flow starts from the Low Side FET, runs through the inductor L and output capacitor
COUT and back to ground of the Low Side FET via ground of COUT. Tracing these two loops as thick and short as possible
allows noise to be reduced for improved efficiency. It is recommended to connect the input and output capacitors, in
particular, to the ground plane. The PCB layout has a great influence on the DC/DC converter in terms of all of the heat
generation, noise and efficiency characteristics.
VIN
MOS FET
CIN
VOUT
L
COUT
Figure 51. Current Loop of Buck Converter
Accordingly, design the PCB layout with particular attention paid to the following points.
Provide the input capacitor as close to the VIN terminal as possible on the same plane as the IC.
If there is any unused area on the PCB, provide a copper foil plane for the ground node to assist in heat dissipation
from the IC and the surrounding components.
Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Trace to the inductor as
thick and as short as possible.
Provide lines connected to FB and COMP as far as possible from the SW node.
Provide the output capacitor away from the input capacitor in order to avoid the effect of harmonic noise from the
input.
COUT
VOUT
GND
L
CIN
CBOOT
SW
R1
C2
VIN
R2
R3
EN
Top Layer
Bottom Layer
Figure 52. Example of Sample Board Layout Pattern
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Power Dissipation
When designing the PCB layout and peripheral circuitry, sufficient consideration must be given to ensure that the power
dissipation is within the allowable dissipation curve.
4.0
Power dissipation: Pd [W]
3.75W
3.0
θJA=33.3°C/W
4 layer board
(back side copper foil area:70mm×70mm)
2.0
1.0
0
0
25
50
75 85 100
125
150
Temperature:Ta [°C]
Figure 53. Power Dissipation (HTSOP-J8)
I/O equivalence circuit(s)
1. BOOT
8. SW
3. EN
BOOTREG
EN
280kΩ
BOOT
VIN
294kΩ
146kΩ
SW
REG
AGND
PGND
5. FB
6. COMP
VREG
FB
COMP
AGND
AGND
AGND
AGND
Figure 54. I/O Equivalent Circuit Chart
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Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
terminals.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded, the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum rating,
increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
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Operational Notes – continued
11.
Unused Input Terminals
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
12. Regarding Input Pins of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Pin B
B
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
Parasitic
Elements
GND
N Region
close-by
avoided.
Figure 55. Example of monolithic IC structure
13.
Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit (TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be
within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below the
TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
16. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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Ordering Information
B
D
9
E
3
0
1
Part Number
B
D
E
F
J
-
Package
EFJ: HTSOP-J8
9
E
3
Part Number
0
1
E
F
J
Package
EFJ: HTSOP-J8
LBH2
Product class
LB: for Industrial applications
Packaging and forming specification
H2: Embossed tape and 18cm reel
(Quantity : 250pcs)
-
LBE2
Product class
LB: for Industrial applications
Packaging and forming specification
E2: Embossed tape and 32.8cm reel
(Quantity : 2500pcs)
Marking Diagrams
HTSOP-J8 (TOP VIEW)
Part Number Marking
D 9 E 3 0 1
LOT Number
1PIN MARK
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Physical Dimension, Tape and Reel Information
Package Name
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Revision History
Date
Revision
01.Nov.2013
001
21.Feb.2014
002
14.May.2014
003
Changes
New Release
Delete sentence “and log life cycle” in General Description and Futures.
Change “Packaging and forming specification” from E2 to H2.
Add E2 rank of “Packaging and forming specification”
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Datasheet
Notice
Precaution on using ROHM Products
1.
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1),
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice – SS
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice – SS
© 2013 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.001
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