BD9G401UEFJ-ME2

Datasheet 4.5V to 42V Input Voltage Range 3.5A Output Current Integrated FET 1ch Buck Converter BD9G401EFJ-M BD9G401UEFJ-M General Description Key Specifications ◼ Input Voltage： 4.5V to 42V ◼ Precision Reference voltage (Ta= 25°C) ±1.5% (Ta= -40 to +105°C) ±2.0% ◼ Max Output Current： 3.5A(Max) ◼ Operating Temperature： -40°C to +105°C BD9G401EFJ-M and BD9G401UEFJ-M are buck converters with built-in high side MOSFET. It has an input voltage range of 4.5V to 42V. Current mode architecture provides fast transient response and a simple phase compensation setup. The IC is mainly used as a secondary side power supply: for example, a step-down output of 3.3V/5V can be produced from voltage power supply such as 12V or 24V. In addition, it has a synchronization function with an external CLK that provides noise management. Package W (Typ) x D (Typ) x H (Max) HTSOP-J8ES 4.90mm x 6.00mm x 1.00mm Features ◼ ◼ ◼ ◼ AEC-Q100 Qualified(Note 1) Integrated Nch MOSFET Synchronizes to external clock 250kHz to 500kHz ON/OFF Control through EN Terminal (Standby current of 0µA) ◼ Small package(HTSOP-J8ES) ◼ LowDrop Out operation (Note1: Grade 2) Applications HTSOP-J8ES ◼ Consumer devices in general that has 12V / 24V lines ◼ Automotive applications (Audio system, Navigation system, etc) ◼ Industrial distributed-power applications ◼ Entertainment equipment Typical Application Circuit 0.1µF 5V / 3.5A L1: 22µH LX VOUT COUT : 47µF / 16V VCC VCC CVCC : 10µF / 50V D1 GND BST R4 EN VC EN R5 160kΩ 0.01μF FB 30kΩ SYNC SYNC 4.7kΩ Figure 1. Typical Application Circuit 〇Product structure : Silicon monolithic integrated circuit www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 〇This product has no designed protection against radioactive rays 1/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Pin Configuration (TOP_VIEW) 8 VCC LX 1 GND 2 7 BST THERMAL PAD VC 3 6 EN FB 4 5 SYNC Figure 2. Pin Configuration Pin Description Pin No. Pin Name Description 1 LX 2 GND Switching terminal 3 VC Error amplifier output terminal 4 FB Feedback input terminal 5 SYNC 6 EN Enable terminal 7 BST Terminal for boot-strap capacitor 8 VCC Input voltage terminal - THERMAL PAD Ground terminal External clock input terminal PAD for heat dissipation. Always connect to GND. Block Diagram ON/OFF EN VCC 10μA TSD 1.8V UVLO REF REG + - Current Sense ENUVLO shutdown FB + + 0.8V CHG BST OCP Error AMP Σ + - Current Sense AMP Nch FET SW R　　Q S　　　 140mΩ LX VOUT 10Ω Soft Start Oscillator VC Maxduty Logic GND SYNC Figure 3. Block Diagram www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Description of Blocks 1. REF This block generates the reference voltage. 2. REG Regulator for internal circuit power supply. 3. CHG Regulator for bootstrap capacitor charging. 4. TSD Thermal Shutdown Protection Circuit When it detects the temperature exceeding Maximum Junction Temperature (Tj= 150°C), it turns off the output FET, and resets SoftStart circuit. It has a hysteresis function. When the temperature is decreased, the chip automatically returns to normal operation. 5. UVLO Under Voltage Lock-Out Circuit This prevents internal circuit error during increase and decrease of power supply voltage. It monitors VCC terminal voltage. When VCC voltage becomes 4.0V (Typ) and below, it turns OFF output FET. SoftStart circuit also resets during this time. This circuit has a hysteresis of 200mV (Typ). 6. ENUVLO If the voltage from this terminal is below 0.3V, IC operation is OFF. If it is between 0.3V and 1.4V, internal REG circuit turns ON. If it is greater than 1.8V(Typ), the IC is operational and a hysteresis generation current of 10 μA (Typ) is sourced from the EN terminal. To turn off the IC, source current should be removed. When the situation without a signal to control EN terminal at the time of start up is assumed, pull down EN terminal by pull down resistor to prevent becoming the high impedance. Arbitrary UVLO is possible by connecting EN terminal to a voltage divider from the input voltage. See Detailed Description below. 7. ErrorAMP This is an error amplifier circuit that detects the output signal, and outputs PWM control signal. Internal reference voltage is set to 0.8V(Typ). 8. SoftStart This is a circuit that gently raises the output voltage of the DC / DC converter to prevent in-rush current during start-up. SoftStart Time is 8ms (Typ) when the IC operates with the 300 kHz (Typ) internal clock. When the IC operates with an external clock, SoftStart Time is changed according to the oscillator frequency. See Detailed Description below. 9. Oscillator This is a oscillation circuit with an operating frequency fixed to 300 kHz(Typ). By inputting external CLK to the SYNC terminal, synchronous operation of 250 kHz to 500 kHz can be achieved. See Detailed Description below for synchronous operation. When used in self-running mode, please connect SYNC terminal to GND. 10. Current Sense AMP This is a voltage - pulse width converter. It compares the voltage depending on the current of FET SW through the sum of the error amplifier output voltage and the slope ripple. The output then controls the width of the output pulse and outputs it to the driver. 11. Nch FET SW This is a Power Nch MOSFET. It should be used within OCP threshold 4.0A(Min) including the DC current and ripple current of the inductor. See the Application Components Selection Method below for the calculation of FET maximum current. 12. OCP The IC has a pulse-by-pulse over current protection function to protect the FET from over current. When OCP is detected twice sequentially, the device will turn off and restart. See the Detailed Description below for OCP function. 13. MaxDuty logic When Nch FET SW continues being turned ON in eight successive cycles, the high side FET will be turned off forcibly. See the later Detailed Description for LowDrop Out operation. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 3/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Absolute Maximum Ratings (Ta= 25°C) Parameter Symbol Limit Rating Unit VCC-GND Voltage VCC 45 V BST-GND Voltage VBST 50 V BST-LX Voltage VBST-LX 7 V EN-GND Voltage VEN 45 V LX-GND Voltage VLX 45 V FB-GND Voltage VFB 7 V VC-GND Voltage VVC 7 V VSYNC 7 V Operating Temperature Topr -40 to +105 °C Storage Temperature Tstg -55 to +150 °C Junction Temperature Tjmax 150 °C SYNC-GND Voltage Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings Thermal Resistance(Note 1) Parameter Symbol Thermal Resistance (Typ) Unit 1s(Note 3) 2s2p(Note 4) θJA 206.4 45.2 °C/W ΨJT 21 13 °C/W HTSOP-J8ES Junction to Ambient Junction to Top Characterization Parameter(Note 2) (Note 1)Based on JESD51-2A(Still-Air) (Note 2)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 3)Using a PCB board based on JESD51-3. Layer Number of Measurement Board Single Material Board Size FR-4 114.3mm x 76.2mm x 1.57mmt Top Copper Pattern Thickness Footprints and Traces 70μm (Note 4)Using a PCB board based on JESD51-7. Layer Number of Measurement Board 4 Layers Thermal Via(Note 5) Material Board Size FR-4 114.3mm x 76.2mm x 1.6mmt Top 2 Internal Layers Pitch 1.20mm Diameter Φ0.30mm Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70μm 74.2mm x 74.2mm 35μm 74.2mm x 74.2mm 70μm (Note 5) This thermal via connects with the copper pattern of all layers.. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 4/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Recommended Operating Ratings (Ta= -40°C to +105°C) Parameter Power Supply Voltage Symbol VCC Rating Min Typ Max 4.5(Note 6) Unit - 42 V (Note 7) - VCC (Note 8) V Output Voltage VOUT Output Current IOUT - - 3.5 A SYNC Terminal Input Frequency fSYNC 250 - 500 kHz Input Capacitance CIN(Note 9) 2.2 - - µF Inductance L(Note 10) 11 - - µH 0.8 (Note 6) Voltage more than 4.65V is necessary for IC start. The IC can work to 4.5V after start. (Note 7) Restricted by Min On Time 200ns(Max). (Note 8)Upper limit restricted by MaxDuty. (Note 9) The capacitance is selected in the range including temperature characteristics and bias voltage effect. Refer to P18. (Note10)Restricted by output voltage setting. Refer to P17. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Electrical Characteristics (Unless otherwise specified: Ta= 25°C, VCC= 12V, EN= 3V) Parameter Symbol Limits Min Typ Max Unit Conditions Circuit Current VCC Standby Current Ist － 0 10 µA VEN= 0V VCC Circuit Current Icc － 1.2 2.4 mA VFB= 1.2V Vuv 3.65 4.00 4.35 V Vuvhy 50 200 300 mV Under Voltage Lock Out (UVLO) Detect Voltage Hysteresis Width VCC down sweep Oscillator Oscillator Frequency fosc 270 300 330 kHz Dmax 95.0 97.0 99.9 % VSYNC= 0V VFB 0.788 0.800 0.812 V Ta= 25°C VFBT 0.784 0.800 0.816 V Ta= -40 to +105°C IFB Ileak tsoft -1.0 -1.0 5.6 0 0 8.0 +1.0 +1.0 10.4 µA µA ms LX NMOS ON Resistance RonH － 140 － mΩ LX Precharge NMOS ON Resistance RonL － 10 － Ω Over Current Detect Iocp 4 6 － A EN Terminal Internal REG ON-Voltage VENON 0.3 － 1.4 V EN Terminal IC Output on Threshold VENUV 1.65 1.80 1.95 V IC on or off threshold IEN 9.0 10.0 11.0 µA VEN= 3V SYNC Terminal Control Voltage High VSYNCH 2.0 － 5.5 V SYNC Terminal Control Voltage Low VSYNCL -0.3 － +0.8 V ISYNC 6 12 24 µA MaxDuty Cycle Error Amp FB Threshold Voltage Input Bias Current FB Leak Current SoftStart Time VFB= 3.0V VFB= 0V VSYNC= 0V Output CTL EN Terminal Source Current SYNC SYNC Terminal Input Current www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 6/28 VSYNC= 3V TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Detailed Description External CLK for SYNC Function The SYNC terminal can be used to synchronize the regulator to an external system clock(250kHz to 500kHz). To implement the synchronization feature, connect a square wave to SYNC terminal. The square wave amplitude must have transition lower than 0.8V and higher than 2.0V on the SYNC terminal and have an ON and OFF time greater than 100ns. The synchronization frequency range is 250 kHz to 500 kHz. The rising edge of the LX will be synchronized to the falling edge of SYNC terminal signal after 3 SYNC input pulse count. During synchronization and the external clock is removed, the device transitions to self-running mode after 7 μs. SYNC Set the latch for synchronization SYNC_ LATCH about LX 7μsec Figure 4. Frequency Synchronization Function Timing Chart In the Case of not Using the Synchronization Function Although the SYNC terminal is internally pulled down by a resistor, it is recommended to connect SYNC terminal to ground if the synchronization function is not in use. SYNC GND Figure 5. Circuit Diagram of SYNC Terminal Not in Use SoftStart The SoftStart Time is determined by the DC / DC operating frequency. If synchronization is used at the time EN=ON, SoftStart Time is restricted by SYNC terminal input pulse frequency. SYNC terminal input pulse frequency is fosc_ex . The SoftStart Time is expressed by the equation below. t Soft = 300  8 [msec] 　 　 fosc_ex Where: tsoft is the SoftStart time [msec], fosc_ex is the external clock [khz] www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 7/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Detailed Description - Continued OCP Operation IC has built-in over current protection (OCP) for protecting the FET. When OCP is detected twice sequentially, the IC is turned off and after 4000 counts of running CLK frequency, the IC turns ON. In the case that the synchronization function is not used, it becomes 13ms at operating frequency 300 kHz. When using synchronization function, latch stop time is determined by the external CLK frequency through the following expression. Tocp = 1  4000　　 [msec ] fosc_ex Where: Tocp is the Latch stop time [msec] fosc_ex is the external CLK frequency [kHz] VC voltage discharged by OCP latch OCP threshold VC VC voltage rising by output connect to GND force the High side FET OFF by detecting OCP current (pulse by pulse protection) LX output connect to GND VOUT OCP set the OCP latch by detecting the OCP current 2 times sequencially OCP latch reset after 13 msec (300ｋHz 4000 counts) OCP_LATCH Figure 6. Timing Chart at OCP Operation External UVLO Setting The high precision reset function is built in at the EN terminal and arbitrary low-voltage malfunction prevention is possible by connecting EN terminal to a voltage divider from the input voltage. If in use, please set R4 and R5 to arbitrary voltage of IC turned on (Vstart) and turned off (Vstop) through the expression below. VOUT LX VCC GND BST VC EN VCC R4 EN R5 FB SYNC SYNC Figure 7. External UVLO Setup R4 = R5 = Vstart − Vstop IEN 　　 　 [Ω ] VEN  R4 Vstart − VEN 　 　　 [Ω ] IEN: EN terminal source current 10μA (Typ) VEN: EN terminal output on threshold 1.8V (Typ) As for the example above, when VCC voltage at which the IC turns on is 15V and turns off at 14V, R4 would be 100 kΩ and R5 would be 13.6 kΩ for the voltage divider network in the diagram. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 8/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Detailed Description - Continued The countermeasure of voltage generation over output voltage in less than 4.9 V output voltage application IC produces at most 100μA to the output via LX from BST which is internal regulator at the following condition Output of IC can generate at most 4.9V from BST voltage, so according to output voltage setting, output voltage is Greater than setting output voltage. In order to prevent generation of output voltage that is over setting output voltage, fewer than 4.9 output voltage application need to attach over 100μA load in output. Set a resistance level that feedback resister of output generate more than 100μA. In addition, it is feasible to attach output over 100μA feedback resister. [Conditions] IC internal regulator is operating when switching is no operation. For example, input voltage is less than internal UVLO threshold, EN terminal voltage is condition of internal REG ON. ON/OFF EN VCC 10µA TSD 1.8V UVLO REF CHG REG + - ENUVLO shutdown FB + + 0.8V BST MAX:4.9V OCP Error AMP Σ + - Current Sense AMP R Q S Nch FET SW OFF LX MAX:100uA VOUT OFF Soft Start Oscillator VC Maxduty Logic GND SYNC Figure 8. Current Path at the Time of the SW off and Internal REG ON www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 9/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Detailed Description - Continued LowDrop Out Operation For the BST terminal charge that is the drive voltage of the High-side Nch FET, input and output limit is set by MaxDuty. The IC has two operation modes: Steady operation mode and MaxDuty mode, to cope with wide duty output. When the IC is in steady operation mode, FET is switching every period. When the IC is in MaxDuty mode, after ON pulse up to eight periods, FET is forced off in 700ns. Operation Duty is calculated as follows by input and output voltage to use and a load. Don = VOUT  100 VCC − RonH  IOUT % MaxDuty is calculated as follows by forced-off time (Typ: 300ns) and operating frequency. Don_ max = (1 − 300n  f osc )  100 % In the case of 300 kHz operating frequency where the SYNC terminal is not used, MaxDuty for steady operation is 91%. If duty requirement is beyond this level, then shift to MaxDuty mode. During MaxDuty mode, the IC is enabled to output 100% duty for 8 periods of internal clock and a forced-off section of 700nsec exists. MaxDuty in the MaxDuty mode is expressed by the following equation.  700n  f osc  Don_ max 2 = 1 −   100 8   % In MaxDuty mode, switching operation does not occur every period, so the inductor ripple current and output ripple voltage become bigger than steady operation. Output voltage drops in the case of duty is higher than Don_max2. MinDuty There are output voltage restrictions by MinDuty. The MinDuty required is as follows with worst min on time (200nsec). Don_ min = (200n  f osc )  100 % Heat generation for the Light-Load For the light-load, Nch FET of 10Ω in this IC pulls out charge into GND, and BST capacitor is charged. When Nch FET pulls out charge, this IC has a loss by ON resistance 10Ω of Nch FET and the flowing current. The loss and heat generation may be increased with the condition of high input voltage, high output voltage and low inductance value. Confirmation of efficiency and heat generation for the light-load is recommended. When the heat generation for the light-load rises high, high inductance value is recommended. The heat generation is decreased by dropping down the ripple current. 80 VCC L= 15µH 70 60 LX VOUT L= 22µH 50 Tj [℃ ] High-side Nch FET 40 30 Pre-charge Nch FET L= 33µH 20 L= 47µH 10 0 0 200 400 600 800 1000 1200 1400 1600 Output Current [mA] Figure 9. Current Passes at The Time of Light-Load www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Figure 10. Junction Temperature vs Output Current (VCC =24V, Vout= 12V) (Rohm Board (4layers 40mm x 40mm) ) 10/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Performance Curves (Reference data) (Unless Otherwise Specified, Ta= 25°C, VCC= 12V) 2.0 1.0 0.8 Input Circuit Current ICC [mA] Standby Current Ist [µA] 0.9 0.7 0.6 0.5 0.4 0.3 0.2 VCC= 12, 24, 42 V Temperature= 105°C 1.5 25°C 1.0 -40 °C 0.5 0.1 0.0 0.0 -60 -40 -20 0 20 40 60 80 100120 0 Temperature [˚C] 5 10 15 20 25 30 35 40 45 VCC [V] Figure 11. Standby Current vs Temperature Figure 12. Input Circuit Current vs Input Voltage (VFB= 1.2V) 5.0 2.0 4.6 1.5 UVLO Threshold Vuv [V] Input Circuit Current ICC [mA] 4.8 1.0 0.5 4.4 reset voltage 4.2 4.0 3.8 3.6 detect voltage 3.4 3.2 3.0 0.0 -60 -40 -20 0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100 120 Temperature [˚C] Temperature [˚C] Figure 13. Input Circuit Current vs Temperature (VFB= 1.2V) www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 11/28 Figure 14. UVLO Threshold vs Temperature TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Performance Curves (Reference data) - Continued 350 100 340 98 320 MaxDuty D max [%] Frequency fosc [kHz] 330 310 300 290 280 96 94 92 270 260 90 250 -60 -40 -20 0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100 120 Temperature [˚C] Temperature [˚C] Figure 16. MaxDuty vs Temperature 0.810 0.810 0.808 0.808 0.806 0.806 0.804 FB Threshold VFB [V] FB Threshold VFB [V] Figure 15. Frequency vs Temperature 0.802 0.800 0.798 0.796 0.804 0.802 0.800 0.798 0.796 0.794 0.794 0.792 0.792 0.790 -60 -40 -20 0 20 40 60 80 100120 0.790 0 Temperature [˚C] VCC [V] Figure 18. FB Threshold vs Input Voltage Figure 17. FB Threshold vs Temperature www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 5 10 15 20 25 30 35 40 45 12/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Performance Curves (Reference data) - Continued 16 High Side FET ON resistance R ONH [mΩ] 300 SoftStart Time tsoft [msec] 14 12 10 8 6 4 2 250 200 150 100 50 0 0 -60 -40 -20 0 -60 -40 -20 0 20 40 60 80 100 120 20 40 60 80 100 120 Temperature [˚C] Temperature [˚C] Figure 19. Soft Start Time vs Temperature Figure 20. High Side FET RON vs Temperature 10 9 OCP Detect Current Iocp [A] Precharge FETON resistance RONL [mΩ] 20 15 10 5 8 7 6 5 4 3 2 1 0 -60 -40 -20 0 0 20 40 60 80 100 120 -60 -40 -20 0 Temperature [˚C] Figure 21. Precharge FET RON vs Temperature www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 20 40 60 80 100 120 Temperature [˚C] Figure 22. OCP Detect Current vs Temperature 13/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Performance Curves(Reference data) – Continued 11.0 2.0 EN UVLO Source Current IEN [µA] EN UVLO Threshold VENUVLO [V] 10.8 1.9 1.8 1.7 1.6 10.6 10.4 10.2 10.0 9.8 9.6 9.4 9.2 9.0 1.5 -60 -40 -20 0 20 40 60 80 100 120 -60 -40 -20 0 20 40 60 80 100120 Temperature [˚C] Temperature [˚C] Figure 23. ENUVLO Threshold vs Temperature www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Figure 24. EN Source Current vs Temperature 14/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Reference Characteristics of Typical Application Circuits 0.1µF 5V / 3.5A L1: 22µH LX VOUT COUT : 47µF / 16V VCC VCC CVCC : 10µF / 50V D1 BST GND R4 EN EN VC R5 160kΩ 0.01μF SYNC FB SYNC 4.7kΩ 30kΩ Figure 25. Typical Application Circuits Parts ： L1 ：TDK CLF12577NIT - 220M CVCC ：murata GRM32ER71H106K 10μF / 50V COUT ：murata GRM32EB31C476K 47μF / 16V D1 ：Rohm RB050L-60 22μH 100 90 80 VCC=12V Efficiency [%] 70 60 VCC=24V 50 40 30 VCC=36V 20 VCC=42V 10 0 1 10 100 1000 10000 IOUT [mA] Figure 26. Efficiency vs IOUT www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 15/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Reference Characteristics of Typical Application Circuits - Continued Phase Phase Gain Figure 27. Frequency Characteristics Gain (IOUT= 0.5A) Figure 28. Frequency Characteristics EN 5V/div EN 5V/div LX 10V/div LX 10V/div Input Current 200mA/div VOUT Input Current 200mA/div VOUT 2V/div 2V/div 2msec/div 2msec/div Figure 29. Startup Waveform (IOUT= 0.5A) www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 (IOUT= 3.5A) Figure 30. Shutdown Waveform 16/28 (IOUT= 0.5A) TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Application Components Selecting Method (1) Inductor Shielded type that meets the current rating (current value from the Ipeak below), with low DCR (Direct Current Resistance element) is recommended. The value of inductor has an effect in the inductor ripple current which causes the output ripple. In the same formula below, this ripple current can be made small with a large value L of the coil or as high as the switching frequency. ΔIL Ipeak =Iout + ⊿ IL/2 [A] (1) Vin-Vout Vout 1 ⊿ IL= x x [A] (2) L Vin f Where: ⊿ IL is the Inductor ripple current, f is switching frequency Figure 31. Inductor Current L [uH] For design value of inductor ripple current, please carry out design tentatively with about 20% to 50% of the maximum output current of the IC. The minimum value of inductance is shown in the following figure. Inductor is selected over the value of the graph. 50 48 46 44 42 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 35 40 Output Voltage [V] Figure 32. Output Voltage vs inductance (min) When current that exceeds the inductor rating flows in to the inductor, the inductor causes a magnetic saturation which in turn causes a decline in efficiency and output oscillation. Please choose a inductor with a sufficient margin so that peak current does not exceed rating current of the inductor . www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 17/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Application Components Selecting Method - Continued (2) Input Capacitor This IC needs an input decoupling capacitor. It is recommended a low ESR ceramic capacitor over 2.2μF. The capacitance is selected considering temperature characteristics and bias voltage effect. The input ripple voltage is determined by input capacitance (CIN). Because the IC input voltage is decreased, consider input voltage range including ripple voltage. The input ripple voltage is estimated by the following. Vin = IOUT(max)  VOUT CIN  f  VCC + ( IOUT(max)  RESR(max) ) [Vp-p] (3) Please notice that frequency is 1/8 times in maxduty mode when the difference between input voltage and output voltage is small. Please refer to Detailed Description for the condition of maxduty mode. The input capacitance has a sufficient value that keep input voltage in the recommended range. Please confirm the characteristic of RMS ripple current – temperature. RMS ripple current (IRMS) is following. I RMS  IOUT  VOUT  VOUT   1 −  VIN  VIN  [ARMS] (4) IRMS has a maximum value when VIN = 2 x VOUT I RMS  IOUT 2 [ARMS] (5) Choose an input capacitor that have enough temperature margin at the IRMS. (3) Output Capacitor In order to reduce output ripple, a ceramic capacitor of low ESR is recommended. Also, for capacitor rating, take into consideration the DC bias characteristics. Use a capacitor with maximum rating of sufficient margin with respect to the output voltage. Output ripple voltage is obtained through the following formula. 1 Vpp = ⊿ IL x + ⊿ IL x RESR [V] (6) 2π x f x COUT Please set the value within allowable ripple voltage. Confirm rush current(Irush) of the start up because the output capacitance has an effect of Irush. Irush is estimated in the following. I rush  COUT  VOUT  f osc _ ex Tsoftstart  f osc + IL + IOUTstart [A] (7) Where: Tsoftstart is soft start time fosc is inner frequency 300kHz fosc_ex is SYNC frequency (If the SYNC function is not used, fosc_ex equals to fosc) IOUTstart is output current when IC is start up. At least, It is required that Irush is less than 4A that is minimum value of OCP threshold. The rush current is added the current caused by ERROR AMP delay actually. Please confirm that start up rush current is lower than 4A. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 18/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Application Components Selecting Method - Continued (4) Output Voltage Setting The ERROR AMP internal reference voltage is 0.8V. Output voltage is determined by next formula. VOUT ERROR AMP R1 (R1 + R2) FB VOUT = R2 x 0.8 [V] (8) R2 VREF 0.8 V Figure 33. Voltage feed back Resistance Setting Method (5) Bootstrap Capacitor Please connect a 0.1µF (Ceramic Capacitor) between BST and LX terminal. Because the rating between BST-LX becomes 7V, as for the proof pressure, 10V or more are recommended. (6) About the adjustment of DC / DC Converter Frequency Characteristics Role of phase compensation element C1, C2, R3 Vout LX VCC GND BST VC EN FB SYNC VCC EN C2 C1 SYNC R3 Figure 34. Phase Compensation Element Stability and responsiveness of the loop are controlled through the VC terminal which is the output of the error amplifer. The combination of zero and pole that determines the stability and responsiveness is adjusted through the combination of resistor and capacitor connected in series to the VC terminal. The DC Gain of the Voltage feed back Loop can be calculated using the following formula. VFB Adc = RI x GCS x AEA x Vout Here, VFB is the Feedback Voltage (0.8V). AEA is the Voltage Gain of Error amplifier (Typ: 80dB), GCS is the Trans-conductance of Current Detect (Typ: 10A / V), and RI is the Output Load Resistance value. There are 2 important poles in the control loop of this DC / DC. The first occurs in the output resistance of phase compensation capacitor (C1) and error amplifier, the other one occurs in the output capacitor and load Resistor. These poles appear in the frequency written below. fp1 = GEA 2π x C1 x AEA 1 fp2 = 2π x COUT x RI Here, GEA is the trans-conductance of Error amplifier (Typ: 220µA / V). In this control loop, one zero becomes important. With the zero which occurs because of phase compensation capacitor C1 and phase compensation resistor R3, the frequency as shown below appears. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 19/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Application Components Selecting Method - Continued 1 fz 1 = 2π x C1 x R3 Also, if in this control loop the output capacitor is large, and that the ESR (RESR) is also large, there are cases when it has an important, separate zero (ESR zero). This ESR zero that occurs due to ESR of output capacitor and its capacitance can be calculated as follows. 1 fZESR = 2π x COUT x RESR (ESR zero) In this case, the 3rd pole is determined with the 2nd phase compensation capacitor (C2) and phase correction resistor (R3) is used in order to correct the ESR zero results in the loop gain. This pole exists in the frequency shown below. 1 fp 3 = 2 π x C2 x R3 (Pole that corrects ESR zero) The target of phase compensation design is to acquire necessary band and phase margin. It set that cross-over frequency (bandwidth):fc at which loop gain of the return loop becomes “0” . When the cross-over frequency becomes low, power supply fluctuation response, load response, etc worsens. On the other hand, when cross-over frequency becomes high, loop of phase margin becomes decrease. In order to ensure the phase margin, cross-over frequency needs to set 1/20 or below of the switching frequency. Selection method of Phase Compensation constant is shown below. 1. Phase compensation resistor (R3) is selected in order to set the desired cross-over frequency. Calculation of R3 is done using the formula below. R3 = 2. GEA x GCS Vout x VFB Select phase compensation capacitor (C1). By matching the zero of compensation to 1/4 and below of the cross-over frequency, sufficient phase margin can be acquired. C1 can be calculated using the following formula. C1 > 3. 2 π x COUT x fc 4 2π x R3 x fc Examination whether the second phase compensation capacitor C2 is necessary or not is done. If the ESR zero of the output capacitor is smaller than half of the switching frequency, a second phase compensation capacitor is necessary. In other words, it is the case wherein the condition below happens: 1 < 2π x COUT x RESR fs 2 In this case, add a second phase compensation capacitor C2, and match the frequency of the third pole fp3 to the frequency of ESR zero. C2 can be acquired using the following formula. C2 = COUT x RESR www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 R3 20/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Power Dissipation Estimate The following formulas show how to estimate the device power dissipation under continuous mode operations. They should not be used if the device is working in the discontinuous conduction mode. 1) Conduction loss：Pcon= IOUT2 x RonH x VOUT / VCC 2) Switching loss：Psw= 19×10-9 x VCC x IOUT x fsw 3) Gate charge loss：Pgc= 9.0×10-9 x fsw 4) Quiescent current loss：Pq= ICC x VCC IOUT is the output current , RonH is the on-resistance of the high-side Nch FET, VOUT is the output voltage. VCC is the input voltage, fsw is the switching frequency. Power dissipation of IC is the sum of above dissipation. Pd= Pcon + Psw + Pgc + Pq For given Tj, Tj= Ta + θja x Pd Pd is the total device power dissipation, Ta is the ambient temperature. Tj is the junction temperature, θja is the thermal resistance of the package. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 21/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M PCB Layout Layout is a critical portion of a good power supply design. Here are several signals paths that conduct fast changing currents or voltages that can interact with stray inductance or parasitic capacitance to generate noise or degrade the power supply’s performance. To help eliminate these problems, the VCC terminal should be bypassed to ground with a low ESR ceramic bypass capacitor. Care should be taken to minimize the loop area formed by the bypass capacitor, VCC terminal, and anode of the catch diode. See Figure.34 for a PCB layout example. The GND terminal should be soldered directly to the thermal pad under the IC and the thermal pad. The thermal pad should be connected to any internal PCB ground plane using multiple VIAs directly under the IC. The LX terminal should be routed to the cathode of the catch diode and to the output inductor. Since the LX connection is the switching node, the catch diode and output inductor should be located close to the LX terminal, and the area of the PCB conductor is minimized to prevent excessive capacitive coupling. For operation at full rated load, the topside ground area must provide adequate heat dissipation. The additional external components can be placed approximately as shown. It may be possible to obtain acceptable performance with alternate PCB layouts; however, this layout has been shown to produce good results and is meant as a guideline. VOUT Output Inductor Output Capacitor Topside Ground Area Catch Diode Input Bypass Capacitor LX VCC VCC BST GND CBST Compensation Network VC EN FB SYNC Route BST Capacitor Trace on another layer to provide with wide path for topside ground Signal VIA Thermal VIA Resistor Divider Figure 35. Reference Evaluation Board Pattern www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 22/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M I/O Equivalent Schematic Pin. No Pin. Name 1 LX 2 GND 7 BST LX 8 VCC GND Pin. No Pin Equivalent Schematic Pin. Name Pin Equivalent Schematic SYNC BST VCC 5 SYNC GND VCC VC 3 VC 6 EN EN GND GND FB 4 FB GND www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 23/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Operational Notes 1. Reverse Connection of Power Supply Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins. 2. Power Supply Lines Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. Ground Voltage Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. In addition, including transition phenomenon, it prevents all pin except GND pin from not becoming lower than GND pin voltage. 4. Ground Wiring Pattern When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance. 5. Thermal Consideration Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the maximum junction temperature rating. 6. Recommended Operating Conditions These conditions represent a range within which the expected characteristics of the IC can be approximately obtained. The electrical characteristics are guaranteed under the conditions of each parameter. 7. Inrush Current When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 8. Operation Under Strong Electromagnetic Field Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction. 9. Testing on Application Boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 24/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Operational Notes – Continued 10. Inter-Pin Short and Mounting Errors Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. 11. Unused Input Pins Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power supply or ground line. 12. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Resistor Transistor (NPN) Pin A Pin B C E Pin A N P+ P N N P+ N Pin B B Parasitic Elements N P+ N P N P+ B N C E Parasitic Elements P Substrate P Substrate GND GND Parasitic Elements GND Parasitic Elements GND N Region close-by Figure 36. Example of Monolithic IC Structure 13. Ceramic Capacitor When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. 14. Area of Safe Operation (ASO) Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within the Area of Safe Operation (ASO). 15. Thermal Shutdown Circuit(TSD) This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage. 16. Over Current Protection Circuit (OCP) This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in applications characterized by continuous operation or transitioning of the protection circuit. www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 25/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Ordering Part Information B D 9 Part Number G 4 0 Production Line None: Production line A U: Production line B(Note11) 1 x E F J Package EFJ: HTSOP-J8ES - M E 2 Product Class M: for Automotive Packaging Specification E2: Embossed tape and reel (Note11) For the purpose of improving production efficiency, this product has multi-line configuration. Electric characteristics noted in this datasheet does not differ between the 2 lines. Production line B is recommended for new product. Marking Diagram BD9G401EFJ-M BD9G401UEFJ-M HTSOP-J8ES (TOP VIEW) HTSOP-J8ES (TOP VIEW) Part Number Marking D 9 G 4 0 1 Part Number Marking 9 G 4 0 1 U LOT Number 1PIN MARK www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 LOT Number 1PIN MARK 26/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Physical Dimension, Tape and Reel Information Package Name www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 HTSOP-J8ES 27/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 BD9G401EFJ-M BD9G401UEFJ-M Revision History Date Revision 30.Nov.2016 001 10.Mar.2017 002 29.Mar.2022 003 www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 Changes Create new Rev.001 P1.SYNC Terminal input frequency min 200kHz ⇒250kHz P5. Recommended Operating Ratings added SYNC Terminal Input Frequency, Input Capacitance and Inductance. P17.Inductance min value added P18.Input capacitor selection added P19.Output capacitor selection added P1-28 Added production line B part name to the header P1 Changed the package image P26 Added information of production line B to Ordering Part Information P26 Added marking diagram for production line B P27 Fixed physical dimension image P27 Updated Tape and Reel Information image 28/28 TSZ02201-0252AAP00020-1-2 29.Mar.2022 Rev.003 Notice Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. 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However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.004 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. 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Rev.004 Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001