BD9S400MUF-CE2

Datasheet 2.7V to 5.5V Input, 4A Integrated MOSFET Single Synchronous Buck DC/DC Converter For Automotive BD9S400MUF-C General Description Key Specifications BD9S400MUF-C is a synchronous buck DC/DC Converter with built-in low On Resistance power MOSFETs. It is capable of providing current up to 4A. The SLLMTM control provides excellent efficiency characteristics in light-load conditions which make the product ideal for reducing standby power consumption of equipment. Small inductor is applicable due to high switching frequency of 2.2MHz. It is a current mode control DC/DC Converter and features high-speed transient response. Phase compensation can also be set easily. It can also be synchronized to external pulse.         Input Voltage: 2.7V to 5.5V Output Voltage Setting: 0.8V to VPVIN x 0.8V Output Current: 4A(Max) Switching Frequency: 2.2MHz(Typ) High Side MOSFET ON Resistance: 35mΩ (Typ) Low Side MOSFET ON Resistance: 35mΩ (Typ) Shutdown Circuit Current: 0μA (Typ) Operating Temperature: -40°C to +125°C Package VQFN16FV3030 W(Typ) x D(Typ) x H(Max) 3.00mm x 3.00mm x 1.00mm Features            SLLMTM (Simple Light Load Mode) Control AEC-Q100 Qualified(Note 1) Single Synchronous Buck DC/DC Converter Adjustable Soft Start Function Power Good Output Input Under Voltage Lockout Protection Short Circuit Protection Output Over Voltage Protection Over Current Protection Thermal Shutdown Protection Wettable Flank QFN Package Enlarged View VQFN16FV3030 Wettable Flank Package (Note 1) Grade 1 Applications   Automotive Equipment (Cluster Panel, Infotainment Systems) Other Electronic Equipment Typical Application Circuit VIN CIN1 CIN2 VMODE/SYNC VEN PVIN PGD AVIN BOOT C1 MODE/SYNC SW EN VOUT L1 SS COUT ITH R1 R3 PGND FB AGND C3 R2 C2 Figure 1. Application Circuit SLLMTM is a trademark of ROHM Co., Ltd. 〇Product structure : Silicon monolithic integrated circuit .www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 〇This product has no designed protection against radioactive rays 1/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C PVIN 1 PVIN 2 AVIN EN PGD BOOT Pin Configuration 16 15 14 13 12 SW 11 SW EXP-PAD PGND 4 9 AGND 5 6 7 8 MODE /SYNC 10 SW ITH 3 FB PGND SS (TOP VIEW) Figure 2. Pin Configuration Pin Descriptions Pin No. Pin Name Function 1, 2 PVIN Power supply pins for the DC/DC Converter. Connecting a 10µF ceramic capacitor is recommended. 3, 4 PGND Ground pins for the DC/DC Converter. 5 AGND Ground pin. 6 FB 7 ITH VOUT voltage feedback pin. An inverting input node for the gm error amplifier. Connect output voltage divider to this pin to set the output voltage. See page 17 on how to compute for the resistor values. An output pin of the gm error amplifier and the input of PWM comparator. Connect phase compensation components to this pin. See page 20 on calculate the resistance and capacitance of phase compensation. 8 MODE /SYNC Pin for selecting the SLLMTM control mode and the Forced PWM mode. Turning this pin signal Low forces the device to operate in the Forced PWM mode. Turning this pin signal High enables the SLLMTM control and the mode is automatically switched between the SLLMTM control and PWM mode according to the load current. In addition, external synchronization operation is started by inputting synchronous pulse signal to this pin. 9 SS Pin for setting the soft start time. The rise time of the output voltage can be specified by connecting a capacitor to this pin. See page 19 on calculate the capacitance. 10, 11, 12 SW Switch pin. These pins are connected to the source of the High Side MOSFET and drain of the Low Side MOSFET. Connect a bootstrap capacitor of 0.1µF between these pins and the BOOT pin. 13 BOOT 14 PGD Power Good pin, an open drain output. Use of pull up resistor is needed. See page 12 on setting the resistance. 15 EN Pin for controlling the device. Turning this pin signal Low forces the device to enter the shutdown mode. Turning this pin signal High enables the device. 16 AVIN Power supply input pin of the analog circuitry. Connect this pin to PVIN. Connecting a 0.1µF ceramic capacitor is recommended. - EXP-PAD A backside heat dissipation pad. Connecting to the internal PCB ground plane by using via provides excellent heat dissipation characteristics. Connect a bootstrap capacitor of 0.1µF between this pin and the SW pins. The voltage of this capacitor is the gate drive voltage of the High Side MOSFET. www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 2/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Block Diagram VIN VIN AVIN PVIN 16 1 2 Slope EN 15 VREF PWM Comparator Error Amplifier FB BOOT R 6 13 Q S REF_OCP Driver Logic SS 9 SW OSC Soft Start 10 VOUT PVIN AVIN 11 UVLO 12 SCP ITH PGND 3 7 OVP 4 Power Good TSD AGND 5 14 PGD 8 MODE/ SYNC Figure 3. Block Diagram www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 3/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Description of Blocks 1. VREF The VREF block generates the internal reference voltage. 2. UVLO (Under Voltage Lockout) The UVLO block is for under voltage lockout protection. It will shutdown the device when the VIN falls to 2.45V(Typ) or lower. The threshold voltage has a hysteresis of 100mV(Typ). 3. SCP (Short Circuit Protection) This is the short circuit protection circuit. After soft start is judged to be completed, if the FB pin voltage falls to 0.56V(Typ) or less and remain in that state for 1ms(Typ), output MOSFET will turn OFF for 14ms(Typ) and then restart the operation. 4. OVP (Over Voltage Protection) This is the output over voltage protection circuit. When the FB pin voltage becomes 0.880V(Typ) or more, it turns the output MOSFET OFF. After output voltage falls 0.856V(Typ) or less, the output MOSFET returns to normal operation. 5. TSD (Thermal Shutdown) This is the thermal shutdown circuit. It will shutdown the device when the junction temperature (Tj) reaches to 175°C(Typ) or more. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation with hysteresis of 25°C(Typ). 6. OCP (Over Current Protection) The Over Current Protection function operates by limiting the current that flows through High Side MOSFET at each cycle of the switching frequency. 7. Soft Start The Soft Start circuit slows down the rise of output voltage during startup, which allows the prevention of output voltage overshoot. The soft start time of the output voltage can be specified by connecting a capacitor to the SS pin. See page 19 on calculate the capacitance. A built-in soft start function is provided and a soft start is initiated in 1ms(Typ) when the SS pin is open. 8. Error Amplifier The Error Amplifier block is an error amplifier and its inputs are the reference voltage 0.8V(Typ) and the FB pin voltage. Phase compensation can be set by connecting a resistor and a capacitor to the ITH pin. See page 20 on calculate the resistance and capacitance of phase compensation. 9. PWM Comparator The PWM Comparator block compares the output voltage of the Error Amplifier and the Slope signal to determine the switching duty. 10. OSC (Oscillator) This block generates the oscillating frequency. 11. Driver Logic This block controls switching operation and various protection functions. 12. Power Good When the FB pin voltage reaches 0.8V(Typ) within ±7%, the built-in Nch MOSFET turns OFF and the PGD output turns high. In addition, the PGD output turns low when the FB pin voltage reaches outside ±10% of 0.8V(Typ). www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 4/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Absolute Maximum Ratings (Ta=25°C) Parameter Input Voltage Symbol Rating Unit VPVIN, VAVIN -0.3 to +7 V EN Voltage MODE / SYNC Voltage VEN -0.3 to VAVIN V VMODE/SYNC -0.3 to VAVIN V VPGD -0.3 to +7 V PGD Voltage BOOT Voltage VBOOT -0.3 to +14 V ΔVBOOT -0.3 to +7 V VFB, VITH, VSS -0.3 to VAVIN V Tjmax 150 °C Tstg -55 to +150 °C Voltage from SW to BOOT FB ITH SS Voltage Maximum Junction Temperature Storage Temperature Range Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB boards with thermal resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction temperature rating. Thermal Resistance(Note 1) Parameter Symbol Thermal Resistance (Typ) Unit 1s(Note 3) 2s2p(Note 4) θJA 189.0 57.5 °C/W ΨJT 23 10 °C/W VQFN16FV3030 Junction to Ambient Junction to Top Characterization Parameter(Note 2) (Note 1) Based on JESD51-2A(Still-Air) (Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface of the component package. (Note 3) Using a PCB board based on JESD51-3. Layer Number of Measurement Board Single Material Board Size FR-4 114.3mm x 76.2mm x 1.57mmt Top Copper Pattern Thickness Footprints and Traces 70μm (Note 4) Using a PCB board based on JESD51-5, 7. Layer Number of Measurement Board 4 Layers Thermal Via(Note 5) Material Board Size FR-4 114.3mm x 76.2mm x 1.6mmt Top Pitch 1.20mm 2 Internal Layers Diameter Φ0.30mm Bottom Copper Pattern Thickness Copper Pattern Thickness Copper Pattern Thickness Footprints and Traces 70μm 74.2mm x 74.2mm 35μm 74.2mm x 74.2mm 70μm (Note 5) This thermal via connects with the copper pattern of all layers. Recommended Operating Conditions Parameter Input Voltage Operating Temperature Symbol Min Max Unit VPVIN, VAVIN 2.7 5.5 V Topr -40 +125 °C Output Current IOUT - 4 A Output Voltage Setting VOUT 0.8(Note 1) VPVIN x 0.8 V SW Minimum ON Time tON_MIN - 95 ns External Clock Frequency fSYNC 1.8 2.4 MHz Synchronous Operation Input Duty DSYNC 25 75 % (Note 1) Although the output voltage is configurable at 0.8V and higher, it may be limited by the SW min ON pulse width. For the configurable range, please refer to the Output Voltage Setting in Selection of Components Externally Connected. www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 5/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Electrical Characteristics (Unless otherwise specified Ta=-40°C to +125°C, AVIN=PVIN=5V, EN=5V) Parameter Symbol Min Typ Max Unit Conditions Shutdown Circuit Current ISDN - 0 10 µA Circuit Current ICC 400 650 900 µA VUVLO1 VUVLO2 VUVLO-HYS 2.30 2.40 50 2.45 2.55 100 2.60 2.70 125 V V mV VEN=0V, Ta=25°C IOUT=0mA Non-switching, Ta=25°C VAVIN Falling VAVIN Rising Ta=25°C VENH VENL IEN 2.0 GND 2 5 VIN 0.8 8 V V µA VEN=5V, Ta=25°C MODE/SYNC Threshold Voltage High VMODESYNCH 2.0 - VIN V MODE/SYNC Threshold Voltage Low VMODESYNCL GND - 0.8 V IMODESYNC 4 10 16 µA VFB IFB IITHSI IITHSO 0.788 12 -25 0.8 0 19 -19 0.812 0.2 25 -12 V µA µA µA 0.5 1.0 2.0 ms 0.6 1.2 2.4 ms ISS -2.34 -1.8 -1.26 µA fSW 2.0 2.2 2.4 MHz VFB x 0.87 VFB x 0.90 VFB x 1.07 VFB x 1.04 10 0.01 VFB x 0.90 VFB x 0.93 VFB x 1.10 VFB x 1.07 0 30 0.03 VFB x 0.93 VFB x 0.96 VFB x 1.13 VFB x 1.10 2 60 0.06 10 35 15 38 10 AVIN UVLO Detection Voltage UVLO Release Voltage UVLO Hysteresis Voltage ENABLE EN Threshold Voltage High EN Threshold Voltage Low EN Input Current MODE/SYNC MODE/SYNC Input Current VMODESYNC=5V, Ta=25°C Reference Voltage, Error Amplifier FB Pin Voltage FB Input Current ITH Sink Current ITH Source Current Soft Start Time SS Charge Current tSS VFB=0.8V, Ta=25°C VFB=0.9V, Ta=25°C VFB=0.7V, Ta=25°C VAVIN=5V, The SS Pin OPEN VAVIN=3.3V, The SS Pin OPEN Switching Frequency Switching Frequency Power Good PGD Falling (Fault) Voltage VPGDTH_FF PGD Rising (Good) Voltage VPGDTH_RG PGD Rising (Fault) Voltage VPGDTH_RF PGD Falling (Good) Voltage VPGDTH_FG PGD Output Leakage Current PGD FET ON Resistance PGD Output Low Level Voltage ILEAKPGD RPGD VPGDL V VFB Falling V VFB Rising V VFB Rising V VFB Falling µA Ω V VPGD=5V, Ta=25°C 60 mΩ VPVIN=5V 65 mΩ VPVIN=3.3V 35 60 mΩ VPVIN=5V 15 38 65 mΩ VPVIN=3.3V VPVIN=5.5V, VSW=0V Ta=25˚C VPVIN=5.5V, VSW=5.5V Ta=25˚C IPGD=1mA Switch MOSFET High Side FET ON Resistance RONH Low Side FET ON Resistance RONL High Side FET Leakage Current ILEAKSWH - 0 5 µA Low Side FET Leakage Current ILEAKSWL - 0 5 µA IOCP 4.6 6.4 8.2 A VSCP 0.45 0.56 0.67 V VOVP 0.856 0.880 0.904 V SW Current of Over Current Protection(Note1) SCP, OVP Short Circuit Protection Detection Voltage Output Over Voltage Protection Detection Voltage (Note 1) This is design value. Not production tested. www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 6/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C 10 900 9 850 8 800 Circuit Current : ICC[µA] Shutdown Circuit Current : ISDN[µA] Typical Performance Curves 7 6 5 4 VIN = 5.0V 3 VIN = 3.3V 750 700 650 600 2 500 1 450 0 400 -50 -25 0 25 50 75 100 125 VIN = 5.0V 550 VIN = 3.3V -50 -25 0 50 75 100 125 Temperature[°C] Temperature[°C] Figure 4. Shutdown Circuit Current vs Temperature Figure 5. Circuit Current vs Temperature 2.40 0.812 2.35 VIN = 5.0V FB Pin Voltage : VFB[V] Switching Frequency : fSW [MHz] 25 2.30 2.25 2.20 2.15 VIN = 3.3V 0.808 VIN = 5.0V 0.804 0.800 0.796 VIN = 3.3V 2.10 0.792 2.05 0.788 2.00 -50 -25 0 25 50 75 100 -50 125 0 25 50 75 100 125 Temperature[°C] Temperature[°C] Figure 6. Switching Frequency vs Temperature www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 -25 7/42 Figure 7. FB Pin Voltage vs Temperature TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C 30 -10 28 -12 26 ITH Source Current : IITHSO[µA] ITH Sink Current : IITHSI[µA] Typical Performance Curves – continued VIN = 5.0V 24 22 20 18 VIN = 2.7V 16 14 12 VIN = 2.7V -14 -16 -18 -20 -22 VIN = 5.0V -24 -26 -28 10 -30 -50 -25 0 25 50 75 100 125 -50 -25 Temperature[°C] 25 50 75 100 125 Temperature[°C] Figure 8. ITH Sink Current vs Temperature Figure 9. ITH Source Current vs Temperature 20 2.0 VIN = 5.0V MODE/SYNC Input Current : IMODE/SYNC[µA] MODE/SYNC Threshold Voltage : VMODE/SYNCTH[V] 0 VMODESYNCH 1.8 1.6 1.4 VMODESYNCL 1.2 1.0 0.8 -50 -25 0 25 50 75 100 125 16 VMODE/SYNC = 5.0V 14 12 10 8 6 4 VMODE/SYNC = 3.3V 2 0 -50 -25 0 25 50 75 100 125 Temperature[°C] Temperature[°C] Figure 10. MODE/SYNC Threshold Voltage vs Temperature www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 18 8/42 Figure 11. MODE/SYNC Input Current vs Temperature TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Typical Performance Curves – continued -1.26 2.0 CSS = OPEN -1.44 SS Charge Current : ISS[µA] Soft Start Time : tSS[ms] VIN = 3.3V VIN = 3.3V 1.5 1.0 VIN = 5.0V 0.5 -1.80 -1.98 VIN = 5.0V -2.16 -2.34 0.0 -50 -25 0 25 50 75 100 -50 125 -25 0 25 50 75 100 125 Temperature[°C] Temperature[°C] Figure 12. Soft Start Time vs Temperature Figure 13. SS Charge Current vs Temperature 65 65 60 60 55 Low Side FET ON Resistance : RONL[mΩ] High Side FET ON Resistance : RONH[mΩ] -1.62 VIN = 3.3V 50 45 40 35 VIN = 5.0V 30 25 20 15 10 -50 -25 0 25 50 75 100 125 VIN = 3.3V 50 45 40 35 30 VIN = 5.0V 25 20 15 10 -50 -25 0 25 50 75 100 125 Temperature[°C] Temperature[°C] Figure 14. High Side FET ON Resistance vs Temperature www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 55 9/42 Figure 15. Low Side FET ON Resistance vs Temperature TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Typical Performance Curves – continued 60 VIN = 5.0V VIN = 5.0V 0.88 55 PGD FET ON Resistance : RPGD[Ω] PGD Threshold Voltage : VPGDTH[V] 0.90 0.86 0.84 Falling Good 0.82 Rising Fault 0.80 0.78 Falling Fault 0.76 Rising Good 0.74 0.72 0.70 50 45 40 35 30 25 20 15 10 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature[°C] Temperature[°C] Figure 16. PGD Threshold Voltage vs Temperature Figure 17. PGD FET ON Resistance vs Temperature 2.0 2.70 VIN = 5.0V 1.8 VUVLO2 2.60 EN Threshold Voltage : VENTH [V] UVLO Voltage : VUVLO[V] 2.65 2.55 2.50 2.45 2.40 VUVLO1 2.35 VENH 1.6 1.4 1.2 VENL 1.0 0.8 2.30 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 Temperature[°C] Temperature[°C] Figure 18. UVLO Voltage vs Temperature Figure 19. EN Threshold Voltage vs Temperature www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 10/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Typical Performance Curves – continued 10 SW Current of Over Current Protection : IOCP[A] 7.6 EN Input Current : IEN[µA] 9 8 7 VEN = 5.0V 6 5 4 3 2 VEN = 3.3V 1 0 -50 -25 0 25 50 75 100 125 7.2 6.8 6.4 6.0 5.6 5.2 -50 -25 Temperature[°C] 0.615 0.560 Detection 0.505 0.450 25 50 75 100 125 Temperature[℃] Figure 22. Short Circuit Protection Detection Voltage vs Temperature www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Output Over Voltage Protection Detection Voltage : VOVP[V] Short Circuit Protection Detection Voltage : VSCP[V] Release 0 50 75 100 125 Figure 21 SW Current of Over Current Protection vs Temperature 0.670 -25 25 Temperature[°C] Figure 20. EN Input Current vs Temperature -50 0 0.904 0.896 0.888 0.88 0.872 0.864 0.856 -50 -25 0 25 50 75 100 125 Temperature[℃] Figure 23. Output Over Voltage Protection Detection Voltage vs Temperature 11/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Function Explanations 1. Enable Control The device shutdown can be controlled by the voltage applied to the EN pin. When VEN becomes 2.0V or more, the internal circuit is activated and the device starts up with soft start. When VEN becomes 0.8V or less, the device will be shutdown. VIN 0 t VEN VENH VENL 0 t VOUT VOUT×0.93(Typ) 0 t tSS t_wait 200µs(Typ) Figure 24. Enable ON/OFF Timing Chart 2. Power Good Function When the FB pin voltage reaches 0.8V(Typ) within ±7%, the PGD pin open drain MOSFET turns OFF and the output turns high. In addition, when the FB pin voltage reaches outside ±10% of 0.8V(Typ), the PGD pin open drain MOSFET turns ON and the PGD pin is pulled down with impedance of 30Ω(Typ). It is recommended to use a pull-up resistor of about 10kΩ to 100kΩ for the power source. +10%(Typ) +7%(Typ) VOUT -7%(Typ) -10%(Typ) PGD Figure 25. Power Good Timing Chart www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 12/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Function Explanations – continued 3. External Synchronization Function By inputting synchronous pulse signal to the MODE/SYNC pin, the switching frequency can be synchronized to external synchronous pulse signal. When pulse signal is applied at a frequency of 1.8MHz or higher, the external synchronization operation is started after the falls of the synchronous pulse are detected 7 times. Input the signal with the synchronization frequency range between 1.8MHz and 2.4MHz and the duty range between 25% and 75%. Please note that the output voltage fluctuates by about 2% for a moment when switching between the synchronized operation to external signal and internal CLK frequency. MODE/SYNC 1 2 3 4 5 6 7 SW Internal CLK operation Synchronizing operation Figure 26. External Synchronization Function Timing Chart When using the external synchronization function, connect a capacitor of 10pF in parallel to the phase compensation components (resistor and capacitor) connected to the ITH pin, as a countermeasure against the interference to the ITH pin of the Error Amplifier output. 7 10pF ITH 8 MODE/ SYNC RITH CITH Figure 27. Recommended Circuit When Using External Synchronization Function www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 13/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Function Explanations – continued 4. SLLMTM Control and Forced PWM Control SLLM TM(Simple Light Load Mode) is a technology that enables the OFF control of switching pulses while operating with Pulse Width Modulation(PWM) control loop under light load condition. Therefore, it allows the linear operation without excessive voltage drop or deterioration in transient response during the switching from light load to heavy load or vice versa. By utilizing this technology, BD9S400MUF-C operates in PWM mode switching under heavy load condition and automatically switches to SLLMTM control under light load condition in order to improve the efficiency. By keeping the MODE/SYNC pin voltage level 0.8V or less, it forces the device to operate with Forced PWM mode. And, by applying 2.0V or more to MODE/SYNC pin, it allows the device to operate with SLLMTM control. As for the Forced PWM mode, it has lower efficiency compared to SLLMTM control under light load condition. However, since the device operates with a constant switching frequency under varying load conditions, the countermeasure against noise is relatively easier. Please note that SLLMTM does not operate adequately when the switching Duty is 50% or more. Efficiency [%] ① SLLMTM Control ② Forced PWM Control Output Current IOUT [A] Figure 28. Efficiency (SLLMTM Control and Forced PWM Control) ① SLLMTM Control ② VOUT =50mV/div Forced PWM Control VOUT =50mV/div Time=2µs/div Time=2µs/div SW=2V/div SW=2V/div Figure 29. SW Waveform (SLLMTM Control) (VIN=5.0V, VOUT=1.8V, IOUT=50mA) www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 30. SW Waveform (Forced PWM Control) (VIN=5.0V, VOUT=1.8V, IOUT=1A) 14/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Protection Short Circuit Protection (SCP) The Short Circuit Protection block compares the FB pin voltage with the internal reference voltage VREF. When the FB pin voltage has fallen to 0.56V(Typ) or less and remained there for 1ms(Typ), SCP stops the operation for 14ms(Typ) and subsequently initiates a restart. This protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the device should not be used in applications characterized by continuous operation of the protection circuit (e.g. when a load that significantly exceeds the output current capability of the chip is connected). 1. The EN Pin Short Circuit Protection The FB Pin ≤0.56V(Typ) 2.0V or higher ON Enabled ≥0.60V(Typ) 0.8V or lower Short Circuit Protection Operation OFF Disabled - OFF Soft Start VOUT SCP Delay Time 1ms (Typ) 0.8V FB SCP Delay Time 1ms (Typ) VSCP : 0.56V(Typ) SCP OFF SW LOW IOCP Inductor Current (Output Load Current) Internal HICCUP Delay Signal 14ms (Typ) SCP Reset Figure 31. Short Circuit Protection (SCP) Timing Chart 2. Over Current Protection (OCP) The Over Current Protection function operates by limiting the current that flows through High Side MOSFET at each cycle of the switching frequency. This protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the device should not be used in applications characterized by continuous operation of the protection circuit (e.g. when a load that significantly exceeds the output current capability of the chip is connected). www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 15/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Protection – continued Under Voltage Lockout Protection (UVLO) It will shutdown the device when the AVIN pin falls to 2.45V(Typ) or lower. The threshold voltage has a hysteresis of 100mV(Typ). 3. VIN VUVLO-HYS VUVLO2 VUVLO1 0V t_wait VOUT SoftSstart FB SW Normal operation UVLO Normal operation Figure 32. UVLO Timing Chart 4. Thermal Shutdown This is the thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC’s power dissipation rating. However, if the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit[Tj ≥175°C (Typ)] that will turn OFF output MOSFET. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage. 5. Over Voltage Protection (OVP) The device incorporates an over voltage protection circuit to minimize the output voltage overshoot when recovering from strong load transients or output fault conditions. If the FB pin voltage exceeds Output Over Voltage Protection Detection Voltage at 0.880V(Typ), the MOSFET on the output stage is turned OFF to prevent the increase in the output voltage. After the detection, the switching operation resumes if the output decreases and the over voltage state is released. Output Over Voltage Protection Detection Voltage and release voltage have a hysteresis of 3%. VOUT VOVP : 0.880V(Typ) hys FB OVP Release Threshold SW Internal OVP Signal Figure 33. OVP Timing Chart www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 16/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Selection of Components Externally Connected Contact us if not use the recommended constant in the application circuit. Necessary parameters in designing the power supply are as follows: Table 1. Application Specification Parameter Input Voltage Output Voltage Switching Frequency Inductor Ripple Current Output Capacitor Soft Start Time Maximum Output Current Symbol VIN VOUT fSW ΔIL COUT tSS IOUTMAX Example Value 5.0V 1.2V 2.2MHz(Typ) 0.4A 44μF 4.5ms(Typ) 4A Application Example R4 VIN CIN1 CIN2 Enable PVIN PGD AVIN BOOT PGD MODE/SYNC EN C1 SW VOUT L1 SS R100 ITH R1 R3 COUT2 PGND FB AGND R2 C2 C3 COUT1 Figure 34. Typical Application 1. Switching Frequency The switching frequency fSW is fixed at 2.2MHz(Typ) inside the IC. 2. Selection of Output Voltage Setting The output voltage value can be set by the feedback resistance ratio. 𝑉𝑂𝑈𝑇 = VOUT 𝑅1 +𝑅2 𝑅2 × 0.8 [V] R1 FB R2 SW Minimum ON Time that BD9S400MUF-C can output stably in the entire load range is 95ns. Use this value to calculate the input and output conditions that satisfy the following equation 0.8V(Typ) 95 [ns] ≤ 𝑉𝑂𝑈𝑇 𝑉𝐼𝑁 × 𝑓𝑂𝑆𝐶 Figure 35. Feedback Resistor Circuit www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 17/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Selection of Components Externally Connected – continued 3. Selection of Input Capacitor The input capacitor requires a large capacitor value for CIN1 and a small capacitor value for CIN2. Please use ceramic type capacitor for these capacitors. CIN1 is used to suppress the ripple noise, and CIN2 is used to suppress the switching noise. These ceramic capacitors are effective by being placed as close as possible to the PVIN pin and the AVIN pin. Capacitor with value 4.7μF or more for CIN1, and 0.06μF or more for CIN2 are necessary. In addition, the voltage rating for both capacitors has to be twice the typical input voltage. Set the capacitor value so that it does not fall to its minimum required value against the capacitor value variances, temperature characteristics, DC bias characteristics, aging characteristics, and etc. Please use components which are comparatively same with the components used in “Application Example” on page 22. Moreover, factors like the PCB layout and the position of the capacitor may lead to IC malfunction. Please refer to “Notes on the PCB layout Design” on page 34 and 35. 4. Selection of Output LC Filter In order to supply a continuous current to the load, the DC/DC converter requires an LC filter for smoothing the output voltage. When an inductor with a higher inductance value is selected, the ripple current flowing through the inductor ΔIL and the ripple voltage generated in the output voltage are reduced. However, the load transient response characteristic becomes slow. If an inductor with a lower inductance value is selected, its transient response characteristic is faster. However, the ripple current flowing through the inductor becomes larger and the ripple voltage in the output voltage becomes larger, causing a trade-off between the response characteristic and the ripple current and voltage. Here, the inductance value is selected so that the ripple current component is in the range between 200mA and 1000mA. VIN IL Inductor Saturation Current > IOUTMAX + ∆IL/2 ∆IL Driver L1 VOUT Maximum Output Current IOUTMAX COUT t Figure 36. Waveform of Current Through Inductor Figure 37. Output LC Filter Circuit Inductor ripple current ΔIL can be represented by the following equation. ∆𝐼𝐿 = 𝑉𝑂𝑈𝑇 × (𝑉𝐼𝑁 − 𝑉𝑂𝑈𝑇 ) × 𝑉 1 𝐼𝑁 ×𝑓𝑆𝑊 ×𝐿1 = 414 [mA] where 𝑉𝐼𝑁 𝑉𝑂𝑈𝑇 𝐿1 𝑓𝑆𝑊 is the 5.0V is the 1.2V is the 1.0µH is the 2.2MHz (Switching Frequency) The rated current of the inductor must be larger than the sum of the maximum output current and 1/2 of the inductor ripple current ΔIL. The output capacitor COUT affects the output ripple voltage characteristics. The output capacitor C OUT must satisfy the required ripple voltage characteristics. The output ripple voltage can be represented by the following equation. 1 ∆𝑉𝑅𝑃𝐿 = ∆𝐼𝐿 × (𝑅𝐸𝑆𝑅 + 8×𝐶 𝑂𝑈𝑇 ×𝑓𝑆𝑊 ) [V] Where 𝑅𝐸𝑆𝑅 is the Equivalent Series Resistance (ESR) of the output capacitor The output ripple voltage ΔVRPL can be represented by the following equation. 1 ∆𝑉𝑅𝑃𝐿 = 0.414 × (10 + 8×44×2.2) = 4.67 [mV] where 𝐶𝑂𝑈𝑇 𝑅𝐸𝑆𝑅 is the 44µF is the 10mΩ www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 18/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Selection of Components Externally Connected – continued In addition, for the total value of capacitance in the output line COUT(Max), choose a capacitance value less than the value obtained by the following equation: 𝐶𝑂𝑈𝑇(𝑀𝑎𝑥) < (𝑡𝑆𝑆(𝑀𝑖𝑛) −200[µs])×(𝐼𝑂𝐶𝑃(𝑀𝑖𝑛) −𝐼𝑆𝑊𝑆𝑇𝐴𝑅𝑇 ) 𝑉𝑂𝑈𝑇 [F] Where: 𝐼𝑆𝑊𝑆𝑇𝐴𝑅𝑇 𝐼𝑂𝐶𝑃(𝑀𝑖𝑛) 𝑡𝑆𝑆(𝑀𝑖𝑛) 𝑉𝑂𝑈𝑇 is the maximum output current during startup is the minimum OCP operation SW current 4.6A is the minimum Soft Start Time is the output voltage Startup failure may happen if the limits from the above-mentioned are exceeded. Especially if the capacitance value is extremely large, over current protection may be activated by the inrush current at startup and prevented to turn on the output. Please confirm this on the actual application. Stable transient response and the loop is dependent to COUT. Please select after confirming the setting of the phase compensation circuit. Also, in case of large changing input voltage and output current, select the capacitance accordingly by verifying that the actual application setup meets the required specification. 5. Selection of Soft Start Capacitor Turning the EN pin signal high activates the soft start function. This causes the output voltage to rise gradually while the current at startup is placed under control. This allows the prevention of output voltage overshoot and inrush current. The rise time tSS_EXT depends on the value of the capacitor connected to the SS pin. The capacitance value should be set to 0.22μF or less. VEN 𝑡𝑆𝑆_𝐸𝑋𝑇 = (𝐶3 ×𝑉𝐹𝐵 ) 𝐼𝑆𝑆 [s] VENH VENL 0 t where 𝑡𝑆𝑆_𝐸𝑋𝑇 𝐶3 𝑉𝐹𝐵 𝐼𝑆𝑆 is the Soft Start Time VOUT is the Capacitor connected to the SS pin is the FB pin Voltage 0.8V(Typ) is the SS Charge Current 1.8µA(Typ) 0 With C3=0.01μF 𝑡𝑆𝑆_𝐸𝑋𝑇 = t tSS_EXT t_wait 200µs(Typ) (0.010×0.8) 1.8 = 4.44 [ms] Figure 38. Soft Start Timing chart Turning the EN pin High without connecting capacitor to the SS pin and keeping the SS pin either OPEN condition or about 10kΩ to 100kΩ pull up condition to power source, the output will rise in 1ms(Typ). www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 19/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Selection of Components Externally Connected – continued 6. Selection of Phase Compensation Components A current mode control buck DC/DC converter is two-pole, one-zero system. Two poles are formed by an error amplifier and load, and the one zero point is added by phase compensation. The phase compensation resistor R 3 determines the crossover frequency fCRS that the total loop gain of the DC/DC converter is 0dB.The crossover frequency should be set 20kHz to 100kHz. A high value fCRS provides a good load transient response characteristic but instability. Conversely, a low value fCRS greatly stabilizes the characteristics but the load transient response characteristic is impaired. (1) Selection of Phase Compensation Resistor R3 The Phase Compensation Resistance R3 can be determined by using the following equation. 𝑅3 = 2𝜋×𝑉𝑂𝑈𝑇 ×𝑓𝐶𝑅𝑆 ×𝐶𝑂𝑈𝑇 𝑉𝐹𝐵 ×𝐺𝑀𝑃 ×𝐺𝑀𝐴 [Ω] where 𝑉𝑂𝑈𝑇 𝑓𝐶𝑅𝑆 𝐶𝑂𝑈𝑇 𝑉𝐹𝐵 𝐺𝑀𝑃 𝐺𝑀𝐴 is the Output Voltage is the Crossover Frequency is the Output Capacitance is the Feedback Reference Voltage 0.8V(Typ) is the Current Sense Gain 14.3A/V(Typ) is the Error Amplifier Trans conductance 260µA/V(Typ) (2) Selection of Phase Compensation Capacitance C2 For stable operations of DC/DC converter, the zero point (phase lead) to cancel the phase lag formed by loads is determined with C2. C2 can be calculated with the following equation. 𝐶2 = 1 2𝜋×𝑓𝐶𝑅𝑆 × 1 ×𝑉𝑂𝑈𝑇 0.003 [F] (3) Loop Stability Actually, characteristics will vary depending on PCB layout, arrangement of wiring, kinds of parts used and use conditions (temperature, etc.). Be sure to check stability and responsiveness with actual apparatus. Phase margin of at least 45° in the worst conditions is recommended. Gain Phase Analyzer or Frequency Response Analyzer FRA is used to check frequency characteristics with actual apparatus. Contact the measurement apparatus manufacturer for measurement method. When these measurement apparatuses are not available, there is a method of assuming Phase margin by load response. Monitor variation of output when the apparatus shifts from no load state to maximum load. And it can be said that responsiveness is low if variation amount is large, and phase margin is small if ringing occurs frequently (twice or more as a guide) after variation. However, confirmation of quantitative phase margin is not possible. Maximum load Load IOUT Inadequate phase margin Output voltage VOUT Adequate phase margin 0 t Figure 39. Load Response www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 20/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Selection of Components Externally Connected – continued 7. Input Voltage Startup VIN VIN ×0.8 ≥ VOUT VOUT UVLO release Figure 40. Input Voltage Startup Time The soft start function starts up the device according to the specified soft start time. After UVLO is released, the voltage range that can be outputted during the soft start operation is 80% or less of the input voltage. Note that the input voltage during the startup with soft start should satisfy the following expression 𝑉𝐼𝑁 ≥ 8. 𝑉𝑂𝑈𝑇 0.8 [V] Bootstrap Capacitor Bootstrap capacitor C1 shall be 0.1μF. Connect a bootstrap capacitor between the SW pin and the BOOT pin. For capacitance of bootstrap capacitor, take temperature characteristics, DC bias characteristics and etc. into consideration to set minimum value to no less than 0.047μF. Recommended Parts Manufacturer List Shown below is the list of the recommended parts manufacturers for reference. Table 2. Device Type Manufacturer C Ceramic capacitors Murata www.murata.com C Ceramic capacitors TDK product.tdk.com L Inductors Coilcraft www.coilcraft.com L Inductors Cyntec www.cyntec.com L Inductors Murata www.murata.com L Inductors Sumida www.sumida.com L Inductors TDK R Resisters ROHM www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 21/42 URL www.product.tdk.com www.rohm.com TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Application Example 1 Table 3. Specification Example 1 Parameter Product Name Supply Voltage Output Voltage Soft Start Time Maximum Output Current Operation Temperature Range Symbol IC VIN VOUT tSS IOUTMAX Topr Example Value BD9S400MUF-C 3.3V 1.0V 1.0ms(Typ) 4.0A -40°C to +125°C R4 VIN CIN1 PVIN PGD AVIN BOOT PGD MODE/SYNC CIN2 Enable EN C1 SW VOUT L1 SS R100 ITH C4 PGND R3 COUT1 COUT2 FB AGND R2 C2 C3 R1 Figure 41. Reference Circuit 1 Table 4. Parts List 1 No Package L1 Parameters Part Name(Series) Type Manufacturer 1.0μH CLF6045NIT-1R0N-D Inductor TDK COUT1 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata COUT2 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata CIN1 2012 10μF, X7R, 10V GCM21BR71A106K Ceramic Capacitor Murata CIN2 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor Murata R100 - SHORT - - - R1 1005 7.5kΩ, 1%, 1/16W MCR01MZPF7501 Chip Resistor ROHM R2 1005 30kΩ, 1%, 1/16W MCR01MZPF3002 Chip Resistor ROHM R3 1005 8.2kΩ, 1%, 1/16W MCR01MZPF8201 Chip Resistor ROHM R4 1005 100kΩ, 1%, 1/16W MCR01MZPF1003 Chip Resistor ROHM C1 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor Murata C2 1005 4700pF, X7R, 50V GCM155R71H472K Ceramic Capacitor Murata C3 - - - - - C4 - - - - - www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 22/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Characteristic Data (Application Examples 1) 100 90 80 180 60 135 40 90 20 45 0 0 60 Gain[dB] Efficiency [%] 70 50 40 -20 -45 30 Gain -40 20 Phase[deg] 80 -90 Phase -60 10 0 0.0 1.0 2.0 3.0 Output Current [A] -135 -80 4.0 0.1 Figure 42. Efficiency vs Output Current 1 10 100 Frequency[kHz] -180 1000 Figure 43. Frequency Characteristics (IOUT=2A) Time: 500ns/div Time: 100μs/div VOUT: 20mV/div VOUT: 100mV/div IOUT: 500mA/div IOUT: 1A/div Figure 44. Load Transient Response (IOUT=0A↔2A) www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 45. Output Ripple Voltage (IOUT=2A) 23/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Application Example 2 Table 5. Specification Example 2 Parameter Product Name Supply Voltage Output Voltage Soft Start Time Maximum Output Current Operation Temperature Range Output Capacitor Symbol IC VIN VOUT tSS IOUTMAX Topr COUT Example Value BD9S400MUF-C 3.3V 1.0V 1.0ms(Typ) 4.0A -40°C to +125°C 88μF R4 VIN CIN1 PVIN PGD AVIN BOOT MODE/SYNC CIN2 Enable EN PGD C1 SW VOUT L1 SS R100 COUT1 COUT2 COUT3 COUT4 ITH C4 PGND R3 FB AGND R2 C2 C3 R1 Figure 46. Reference Circuit 2 Table 6. Parts List 2 No Package L1 Parameters Part Name(Series) Type Manufacturer 0.47μH XEL4030-471ME Inductor Coilcraft COUT1 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata COUT2 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata COUT3 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata COUT4 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata CIN1 2012 10μF, X7R, 10V GCM21BR71A106K Ceramic Capacitor Murata CIN2 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor Murata R100 - SHORT - - - R1 1005 7.5kΩ, 1%, 1/16W MCR01MZPF7501 Chip Resistor ROHM R2 1005 30kΩ, 1%, 1/16W MCR01MZPF3002 Chip Resistor ROHM R3 1005 30kΩ, 1%, 1/16W MCR01MZPF3002 Chip Resistor ROHM R4 1005 100kΩ, 1%, 1/16W MCR01MZPF1003 Chip Resistor ROHM C1 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor Murata C2 1005 1000pF, X7R, 50V GCM155R71H102K Ceramic Capacitor Murata C3 - - - - - C4 - - - - - www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 24/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Characteristic Data (Application Examples 2) 100 80 180 90 60 135 40 90 20 45 0 0 80 50 40 -20 Phase[deg] 60 Gain[dB] Efficiency [%] 70 -45 30 Gain -40 -90 Phase 20 -60 10 -135 -80 0 0.0 1.0 2.0 3.0 4.0 0.1 Output Current [A] Figure 47. Efficiency vs Output Current 1 10 100 Frequency[kHz] -180 1000 Figure 48. Frequency Characteristic (IOUT=2A) Time: 500ns/div Time: 100μs/div VOUT: 20mV/div VOUT: 100mV/div IOUT: 500mA/div IOUT: 1A/div Figure 49. Load Transient Response (IOUT=0A↔2A) www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 50. Output Ripple Voltage (IOUT=2A) 25/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Application Example 3 Table 7. Specification Example 3 Parameter Product Name Supply Voltage Output Voltage Soft Start Time Maximum Output Current Operation Temperature Range Symbol IC VIN VOUT tSS IOUTMAX Topr Example Value BD9S400MUF-C 5.0V 1.2V 1.0ms(Typ) 4.0A -40°C to +125°C R4 VIN CIN1 PVIN PGD AVIN BOOT PGD MODE/SYNC CIN2 Enable EN C1 SW VOUT L1 SS R100 ITH C4 PGND R3 COUT1 COUT2 FB AGND R2 C2 C3 R1 Figure 51. Reference Circuit 3 Table 8. Parts List 3 No Package Parameters Part Name(Series) Type Manufacturer L1 COUT1 1.0μH CLF6045NIT-1R0N-D Inductor TDK 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata COUT2 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata CIN1 2012 10μF, X7R, 10V GCM21BR71A106K Ceramic Capacitor Murata Murata CIN2 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor R100 - SHORT - - - R1 1005 10kΩ, 1%, 1/16W MCR01MZPF1002 Chip Resistor ROHM R2 1005 20kΩ, 1%, 1/16W MCR01MZPF2002 Chip Resistor ROHM R3 1005 8.2kΩ, 1%, 1/16W MCR01MZPF8201 Chip Resistor ROHM R4 1005 100kΩ, 1%, 1/16W MCR01MZPF1003 Chip Resistor ROHM Murata C1 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor C2 1005 4700pF, X7R, 50V GCM155R71H472K Ceramic Capacitor Murata C3 - - - - - C4 - - - - - www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 26/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Characteristic Data (Application Examples 3) 100 90 80 180 60 135 40 90 20 45 Efficiency [%] 70 Gain[dB] 60 50 40 0 0 -20 -45 30 Gain -40 20 Phase[deg] 80 -90 Phase -60 10 0 0.0 1.0 2.0 3.0 -135 -80 4.0 0.1 1.0 Output Current [A] Figure 52. Efficiency vs Output Current 10.0 100.0 Frequency[kHz] -180 1000.0 Figure 53. Frequency Characteristics (IOUT=2A) Time: 500ns/div Time: 100μs/div VOUT: 20mV/div VOUT: 100mV/div IOUT: 500mA/div IOUT: 1A/div Figure 54. Load Transient Response (IOUT=0A↔2A) www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 55. Output Ripple Voltage (IOUT=2A) 27/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Application Example 4 Table 9. Specification Example 4 Parameter Product Name Supply Voltage Output Voltage Soft Start Time Maximum Output Current Operation Temperature Range Symbol IC VIN VOUT tSS IOUTMAX Topr Example Value BD9S400MUF-C 5.0V 1.5V 1.0ms(Typ) 4.0A -40°C to +125°C R4 VIN CIN1 PVIN PGD AVIN BOOT PGD MODE/SYNC CIN2 Enable EN C1 SW VOUT L1 SS R100 ITH C4 PGND R3 COUT1 COUT2 FB AGND R2 C2 C3 R1 Figure 56. Reference Circuit 4 Table 10. Parts List 4 No Package L1 Parameters Part Name(Series) Type Manufacturer 1.0μH CLF6045NIT-1R0N-D Inductor TDK COUT1 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata COUT2 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata CIN1 2012 10μF, X7R, 10V GCM21BR71A106K Ceramic Capacitor Murata CIN2 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor Murata R100 - SHORT - - - R1 1005 16kΩ, 1%, 1/16W MCR01MZPF1602 Chip Resistor ROHM R2 1005 18kΩ, 1%, 1/16W MCR01MZPF1802 Chip Resistor ROHM R3 1005 12kΩ, 1%, 1/16W MCR01MZPF1202 Chip Resistor ROHM R4 1005 100kΩ, 1%, 1/16W MCR01MZPF1003 Chip Resistor ROHM C1 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor Murata C2 1005 3300pF, X7R, 50V GCM155R71H332K Ceramic Capacitor Murata C3 - - - - - C4 - - - - - www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 28/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Characteristic Data (Application Examples 4) 100 80 180 90 60 135 40 90 20 45 0 0 80 50 40 -20 Phase[deg] 60 Gain[dB] Efficiency [%] 70 -45 30 Gain -40 20 -90 Phase -60 10 0 0.0 1.0 2.0 3.0 -135 -80 4.0 0.1 1 10 100 -180 1000 Frequency[kHz] Figure 57. Efficiency vs Output Current Figure 58. Frequency Characteristics (IOUT =2A) Time: 100μs/div Time: 500ns/div VOUT: 100mV/div VOUT: 20mV/div IOUT: 500mA/div IOUT: 1A/div Figure 59. Load Transient Response (IOUT = 0A↔2A) www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 60. Output Ripple Voltage (IOUT=2A) 29/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Application Example 5 Table 11. Specification Example 5 Parameter Product Name Supply Voltage Output Voltage Soft Start Time Maximum Output Current Operation Temperature Range Symbol IC VIN VOUT tSS IOUTMAX Topr Example Value BD9S400MUF-C 5.0V 1.8V 1.0ms(Typ) 4.0A -40°C to +125°C R4 VIN CIN1 PVIN PGD AVIN BOOT PGD MODE/SYNC CIN2 Enable EN C1 SW VOUT L1 SS R100 ITH C4 PGND R3 COUT1 COUT2 FB AGND R2 C2 C3 R1 Figure 61. Reference Circuit 5 Table 12. Parts List 5 No Package L1 Parameters Part Name(Series) Type Manufacturer 1.0μH CLF6045NIT-1R0N-D Inductor TDK COUT1 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata COUT2 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata CIN1 2012 10μF, X7R, 10V GCM21BR71A106K Ceramic Capacitor Murata CIN2 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor Murata R100 - SHORT - - - R1 1005 30kΩ, 1%, 1/16W MCR01MZPF3002 Chip Resistor ROHM R2 1005 24kΩ, 1%, 1/16W MCR01MZPF2402 Chip Resistor ROHM R3 1005 13kΩ, 1%, 1/16W MCR01MZPF1302 Chip Resistor ROHM R4 1005 100kΩ, 1%, 1/16W MCR01MZPF1003 Chip Resistor ROHM C1 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor Murata C2 1005 3300pF, X7R, 50V GCM155R71H332K Ceramic Capacitor Murata C3 - - - - - C4 - - - - - www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 30/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Characteristic Data (Application Examples 5) 100 90 80 180 60 135 40 90 20 45 0 0 60 Gain[dB] Efficiency [%] 70 50 40 -20 -45 30 Phase[deg] 80 Gain -40 20 10 -90 Phase -60 0 0.0 1.0 2.0 3.0 -135 -80 4.0 0.1 1 Output Current (A) Figure 62. Efficiency vs Output Current 10 100 Frequency[kHz] -180 1000 Figure 63. Frequency Characteristics (IOUT=2A) Time: 100μs/div Time: 500ns/div VOUT: 100mV/div VOUT: 20mV/div IOUT: 500mA/div IOUT: 1A/div Figure 64. Load Transient Response (IOUT=0A↔2A) www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 65. Output Ripple Voltage (IOUT=2A) 31/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Application Example 6 Table 13. Specification Example 6 Parameter Product Name Supply Voltage Output Voltage Soft Start Time Maximum Output Current Operation Temperature Range Symbol IC VIN VOUT tSS IOUTMAX Topr Example Value BD9S400MUF-C 5.0V 3.3V 1.0ms(Typ) 4.0A -40°C to +125°C R4 VIN CIN1 PVIN PGD AVIN BOOT PGD MODE/SYNC CIN2 Enable EN C1 SW VOUT L1 SS R100 ITH C4 PGND R3 COUT1 COUT2 FB AGND R2 C2 C3 R1 Figure 66. Reference Circuit 6 Table 14. Parts List 6 No Package Parameters Part Name(Series) Type Manufacturer L1 COUT1 1.0μH CLF6045NIT-1R0N-D Inductor TDK 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata COUT2 3216 22μF, X7R, 6.3V GCM31CR70J226K Ceramic Capacitor Murata CIN1 2012 10μF, X7R, 10V GCM21BR71A106K Ceramic Capacitor Murata CIN2 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor Murata R100 - SHORT - - - R1 1005 75kΩ, 1%, 1/16W MCR01MZPF7502 Chip Resistor ROHM R2 1005 24kΩ, 1%, 1/16W MCR01MZPF2402 Chip Resistor ROHM R3 1005 20kΩ, 1%, 1/16W MCR01MZPF2002 Chip Resistor ROHM R4 1005 100kΩ, 1%, 1/16W MCR01MZPF1003 Chip Resistor ROHM C1 1005 0.1μF, X7R, 16V GCM155R71C104K Ceramic Capacitor Murata C2 1005 2200pF, X7R, 50V GCM155R71H222K Ceramic Capacitor Murata C3 - - - - - C4 - - - - - www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 32/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Characteristic Data (Application Examples 6) 100 90 80 180 60 135 40 90 20 45 0 0 60 Gain[dB] Efficiency [%] 70 50 40 -20 -45 30 Gain -40 -90 Phase 20 -60 10 0 -135 -80 0.0 1.0 2.0 3.0 4.0 Phase[deg] 80 0.1 1 10 100 -180 1000 Frequency[kHz] Output Current [A] Figure 67. Efficiency vs Output Current Figure 68. Frequency Characteristics (IOUT=2A) Time: 100μs/div Time: 500ns/div VOUT: 100mV/div VOUT: 20mV/div IOUT: 500mA/div IOUT: 1A/div Figure 69. Load Transient Response (IOUT=0A↔2A) www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 Figure 70. Output Ripple Voltage (IOUT=2A) 33/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C PCB Layout Design PCB layout design for DC/DC converter is as important as the circuit design. Appropriate layout can avoid various problems concerning power supply circuit. Figure 71-a to 71-c show the current path in a buck DC/DC converter circuit. The Loop 1 in Figure 71-a is a current path when H-side switch is ON and L-side switch is OFF, the Loop 2 in Figure 71-b is when H-side switch is OFF and L-side switch is ON. The thick line in Figure 71-c shows the difference between Loop1 and Loop2. The current in thick line change sharply each time the switching element H-side and L-side switch change from OFF to ON, and vice versa. These sharp changes induce a waveform with harmonics in this loop. Therefore, the loop area of thick line that is consisted by input capacitor and IC should be as small as possible to minimize noise. For more details, refer to application note of switching regulator series “PCB Layout Techniques of Buck Converter”. Loop1 VIN H-side Switch VOUT L CIN COUT L-side Switch GND GND Figure 71-a. Current Path when H-side Switch = ON, L-side Switch = OFF VIN VOUT L H-side Switch CIN COUT Loop2 L-side Switch GND GND Figure 71-b. Current Path when H-side Switch = OFF, L-side Switch = ON VIN VOUT L CIN COUT H-side FET L-side FET GND GND Figure 71-c. Difference of Current and Critical Area in Layout www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 34/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C PCB Layout Design – continued When designing the PCB layout, please pay extra attention to the following points: • Connect the input capacitor as close as possible to the PVIN pin on the same plane as the IC. • Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the inductor pattern as thick and as short as possible. • R1 and R2 shall be located as close as possible to the FB pin and the wiring between R1 and R2 to the FB pin shall be as short as possible. • Provide lines connected to FB and ITH far from the SW nodes. • When using the external synchronization function, there is concern that the ITH node might be affected by noise. Therefore, place the ITH node as far as possible from the external clock input node. • Influence from the switching noise can be minimized, by isolating Power (Input and Output Capacitor) GND and Reference (FB, ITH) GND. • R100 is provided for the measurement of feedback frequency characteristics (optional). By inserting a resistor into R100, it is possible to measure the frequency characteristics of feedback (phase margin) using FRA etc. R100 is short-circuited for normal use. C1 L1 CIN1 CIN2 IC C3 COU T1 R2 R1 C4 R3 COU T2 C2 R100 Example of Evaluation Board Layout (Top View) Example of Evaluation Board Layout (Bottom View) Figure 72. Example of Evaluation Board Layout www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 35/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Power Dissipation For thermal design, be sure to operate the IC within the following conditions. (Since the temperatures described hereunder are all guaranteed temperatures, take margin into account.) 1. 2. The ambient temperature Ta is to be 125 °C or less. The chip junction temperature Tj is to be 150 °C or less. The chip junction temperature Tj can be considered in the following two patterns: 1. To obtain Tj from the package surface center temperature Tt in actual use 𝑇𝑗 = 𝑇𝑡 + 𝜓𝐽𝑇 × 𝑊 [°C] 2. To obtain Tj from the ambient temperature Ta 𝑇𝑗 = 𝑇𝑎 + 𝜃𝐽𝐴 × 𝑊 [°C] Where: 𝜓𝐽𝑇 𝜃𝐽𝐴 is junction to top characterization parameter (Refer to page 5) is junction to ambient (Refer to page 5) The heat loss W of the IC can be obtained by the formula shown below: 𝑉𝑂𝑈𝑇 𝑉𝑂𝑈𝑇 + 𝑅𝑂𝑁𝐿 × 𝐼𝑂𝑈𝑇 2 (1 − ) 𝑉𝐼𝑁 𝑉𝐼𝑁 1 +𝑉𝐼𝑁 × 𝐼𝐶𝐶 + 2 × (𝑡𝑟 + 𝑡𝑓) × 𝑉𝐼𝑁 × 𝐼𝑂𝑈𝑇 × 𝑓𝑆𝑊 [W] 𝑊 = 𝑅𝑂𝑁𝐻 × 𝐼𝑂𝑈𝑇 2 × Where: 𝑅𝑂𝑁𝐻 𝑅𝑂𝑁𝐿 𝐼𝑂𝑈𝑇 𝑉𝑂𝑈𝑇 𝑉𝐼𝑁 𝐼𝐶𝐶 𝑡𝑟 𝑡𝑓 𝑓𝑆𝑊 is the High Side FET ON Resistance (Refer to page 6) [Ω] is the Low Side FET ON Resistance (Refer to page 6) [Ω] is the Output Current [A] is the Output Voltage [V] is the Input Voltage [V] is the Circuit Current (Refer to page 6) [A] is the Switching Rise Time [s] (Typ:6ns) is the Switching Fall Time [s] (Typ:6ns) is the Switching Frequency (Refer to page 6) [Hz] 1. 𝑅𝑂𝑁𝐻 × 𝐼𝑂𝑈𝑇 2 2. 𝑅𝑂𝑁𝐿 × 𝐼𝑂𝑈𝑇 2 3. 1 2 × (𝑡𝑟 + 𝑡𝑓) × 𝑉𝐼𝑁 × 𝐼𝑂 × 𝑓𝑆𝑊 Figure 73. SW Waveform www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 36/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C I/O Equivalent Circuits 6. FB 7. ITH 20kΩ 10kΩ FB AVIN AGND 10kΩ ITH AGND 40Ω ITH 5kΩ 10kΩ 10kΩ AGND 8. MODE/SYNC AGND AGND 9. SS 20kΩ 150kΩ MODE / SYNC AVIN AGND SS 1kΩ 350kΩ 80kΩ 1kΩ 40kΩ AGND AGND AGND AGND 10.11.12. SW, 13. BOOT AGND AGND 14. PGD PVIN BOOT PGD PVIN 25Ω SW PVIN AGND AGND PGND 15. EN EN 430kΩ 10kΩ 570kΩ AGND www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 AGND AGND 37/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Operational Notes 1. Reverse Connection of Power Supply Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins. 2. Power Supply Lines Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. Ground Voltage Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However, pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few. 4. Ground Wiring Pattern When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance. 5. Recommended Operating Conditions The function and operation of the IC are guaranteed within the range specified by the recommended operating conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical characteristics. 6. Inrush Current When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of connections. 7. Testing on Application Boards When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and storage. 8. Inter-pin Short and Mounting Errors Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. 9. Unused Input Pins Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power supply or ground line. www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 38/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Operational Notes – continued 10. Regarding the Input Pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or transistor. For example (refer to figure below): When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided. Resistor Transistor (NPN) Pin A Pin B C E Pin A N P+ P N N P+ N Pin B B Parasitic Elements N P+ N P N P+ B N C E Parasitic Elements P Substrate P Substrate GND GND Parasitic Elements GND Parasitic Elements GND N Region close-by Figure 74. Example of monolithic IC structure 11. Ceramic Capacitor When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with temperature and the decrease in nominal capacitance due to DC bias and others. 12. Thermal Shutdown Circuit(TSD) This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat damage. 13. Over Current Protection Circuit (OCP) This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in applications characterized by continuous operation or transitioning of the protection circuit. www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 39/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Ordering Information B D 9 S 4 Part Number 0 0 M U F Package VQFN16FV3030 - CE2 Product class C for Automotive applications Packaging and forming specification E2: Embossed tape and reel Marking Diagrams VQFN16FV3030 (TOP VIEW) Part Number Marking D9S LOT Number 4 0 0 Pin 1 Mark www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 40/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Physical Dimension and Packing Information Package Name www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 VQFN16FV3030 41/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 BD9S400MUF-C Revision History Date Revision 05.Sep.2017 04.Dec.2017 001 002 Changes New Release Update Operational Notes www.rohm.com © 2017 ROHM Co., Ltd. All rights reserved. TSZ22111 • 15 • 001 42/42 TSZ02201-0J1J0AL01350-1-2 04.Dec.2017 Rev.002 Notice Precaution on using ROHM Products 1. (Note 1) If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment , aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in the range that does not exceed the maximum junction temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.003 Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of which storage time is exceeding the recommended storage time period. Precaution for Product Label A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only. Precaution for Disposition When disposing Products please dispose them properly using an authorized industry waste company. Precaution for Foreign Exchange and Foreign Trade act Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign trade act, please consult with ROHM in case of export. Precaution Regarding Intellectual Property Rights 1. All information and data including but not limited to application example contained in this document is for reference only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the Products with other articles such as components, circuits, systems or external equipment (including software). 3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the Products, subject to the terms and conditions herein. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice-PAA-E © 2015 ROHM Co., Ltd. All rights reserved. Rev.003 Datasheet General Precaution 1. Before you use our Products, you are requested to carefully read this document and fully understand its contents. ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this document is current as of the issuing date and subject to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales representative. 3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccuracy or errors of or concerning such information. Notice – WE © 2015 ROHM Co., Ltd. All rights reserved. Rev.001