Datasheet
16V to 60V, 1A 1ch 2.1MHz
Synchronous Buck Converter Integrated FET
For Automotive
BD9V100MUF-C
General Description
Key Specifications
BD9V100MUF-C is a current mode synchronous buck
converter integrating high voltage rating POWER
MOSFETs. The wide range input 16V to 60V and very
short minimum pulse width down to 20ns enables direct
conversion from 48V battery to 3.3V at 2.1MHz operation
by Nano Pulse ControlTM.
Features
Nano Pulse ControlTM Enables Direct Conversion
60V to 3.3V at 2.1MHz
AEC-Q100 Qualified(Note 1)
SW Minimum ON Time 20ns(Max)
Synchronous Switching Regulator Integrating
POWER MOSFETs
Soft Start Function
Current Mode Control
Over Current Protection
Input Under Voltage Lock Out Protection
Input Over Voltage Lock Out Protection
Thermal Shutdown Protection
Output Over Voltage Protection
Short Circuit Protection
Wettable Frank QFN Package
Input Voltage Range:
16V to 60V
Output Voltage Range:
0.8V to 5.5V
Output Current:
1A(Max)
Operating Frequency:
1.9MHz to 2.3MHz
Reference Voltage Accuracy:
±2% (-40°C to +125°C)
Shutdown Circuit Current:
0µA(Typ)
Operating Temperature Range: -40°C to +125°C
Package
VQFN24FV4040
W(Typ) x D(Typ) x H(Max)
4.00mm x 4.00mm x 1.00mm
Enlarged View
(Note 1) Grade 1
VQFN24FV4040
Wettable Flank Package
Applications
Automotive Battery Powered Supplies
Industrial Equipment
Consumer Supplies
Typical Application Circuit
Figure 1. Application Circuit
Nano Pulse ControlTM is a trademark of ROHM Co., Ltd.
〇Product structure : Silicon monolithic integrated circuit
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〇This product has no designed protection against radioactive rays
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Pin Configuration
(TOP VIEW)
Figure 2. Figure of Terminal Placement
Pin Description
Pin No.
Pin Name
1
EN
2
VIN
3 to 6
PVIN
7 to 10
PGND
11,12
N.C.
13,14
SW
15
BST
16
N.C.
17
VREGH
18
PGOOD
19
RT
20
COMP
21
GND
22
FB
23
VMON
24
N.C.
-
E-PAD
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Function
Enable pin. Apply Low-level (0.8V or lower) to turn this device off.
Apply High-level (2.5V or higher) to turn this device on.
Power supply input pin of the internal circuitry.
Connect this pin to PVIN.
Power supply input pins that are used for the output stage of the switching regulator.
Connecting input ceramic capacitors with values of 2.2µF and 0.1µF to this pin is
recommended.
Power GND input pins.
No connection pins. Leave these pins open, or connect PGND pin.
Switching node pins. These pins are connected to the source of the internal the Top
POWER MOSFET and the drain of the internal Bottom side POWER MOSFET.
Connect the power inductor and the bootstrap capacitor 0.022µF and resistor 3.3Ω to
these pins.
Power supply pin of the internal the Top POWER MOSFET. Connect a 3.3Ω resistor to
this pin in series with a 0.022µF bootstrap capacitor connected to SW pin.
This capacitor’s voltage becomes the power supply of the Top POWER MOSFET gate
driver.
No connection pin. Leave this pin open.
Internal power supply output pin. This node supplies power 5V(Typ) to other blocks
which are mainly responsible for the control function of the switching regulator.
Connect a ceramic capacitor with value of 2.2µF to ground.
Power Good pin. This pin is in open drain configuration so pull-up resistor is needed to
turn it HIGH or LOW.
This pin is used for setting the switching frequency. Connect a frequency setting
resistor between this pin and GND pin.
Output of the gm error amplifier, and the input of PWM comparator. Connect phase
compensation components to this pin. See page 23 on calculate the resistance and
capacitance of phase compensation.
Ground pin.
VOUT voltage feedback pin. Inverting input node for the gm error amplifier. Connect
output voltage divider to this pin to set the output voltage. See page 22 on how to
compute for the resistor values.
Short Circuit Protection threshold detect pin. This node is monitoring the output voltage
and discharging it during shutdown.
No connection pin. Leave this pin open.
Exposed pad. Connect this pad to the internal PCB ground plane using multiple via
holes to obtain excellent heat dissipation characteristics.
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Block Diagram
Figure 3. Block Diagram
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Description of Blocks
- ERRAMP
The ERRAMP block is an error amplifier and its inputs are the reference voltage 0.8V(Typ) and the FB pin voltage. The
duty of switching pulse is controlled by ERRAMP output COMP. Set output voltage with FB pin. Moreover, the external
resistor and capacitor are required to COMP pin as phase compensation circuit (refer to Selection of the Phase Compensation
Circuit RCOMP, CCOMP on page 23).
- Soft Start
The Soft Start block prevents the overshoot of the output voltage by gradually increasing the input of the error amplifier
when the power supply turns ON to gradually increase the switching duty cycle. The soft start time is set to 1.1ms
(fSW=2.1MHz). The soft start time can be changed by adjusting the oscillating frequency (refer to Soft Start Time on page 24).
- EN
This IC is in normal operation when the voltage at EN terminal is 2.5V or more. The IC will be shutdown when the voltage
at EN terminal becomes open or 0.8V or less.
- VREGH
This block outputs a regulated 5V(Typ) and supplies it to different blocks in the chip. Connect 2.2µF ceramic capacitor to
GND.
- OSC (Oscillator)
This circuit generates a clock signal that determines converter switching frequency which is 1.9MHz to 2.3MHz. The
frequency of the clock can be set by a resistor connected between the RT pin and the GND pin (refer to page 24 Figure
38). The OSC output send the clock signal to PWM Logic. This clock is also used to set the Soft Start time and Protect
block counter.
- SLOPE
This block generates a sawtooth waveform from OSC clock. The inductor current feedback is added to the sawtooth signal.
- PWM COMP
This block modulates duty cycle by comparing the COMP pin voltage and the sawtooth signal from the SLOPE block.
- PWM Logic
The PWM Logic block controls the POWER MOSFETs ON and OFF timings. In normal operation, the clock signal from
OSC block determines the Top POWER MOSFET ON timing, and the PWM COMP block output determines the OFF timing.
In addition, each protection output signal is passed to the PWM Logic and it controls proper protection functions.
- TSD (Thermal Shutdown)
This block is a thermal shutdown circuit. Both of the output MOSFETs are turned OFF and the VREGH is stopped to prevent
thermal damage or a thermal-runaway of the IC when the chip temperature reaches to approximately 175°C(Typ) or more,
and the operation comes back when the chip temperature comes down to 150°C(Typ) or less. Note that the thermal
shutdown circuit is intended to prevent destruction of the IC itself. Therefore, it is highly recommended to keep the IC
temperature always within the operating temperature range. Operation above operating temperature range will reduce the
lifetime of the IC.
- OCP (Over Current Protection)
While the Bottom POWER MOSFET is ON, if the voltage between the drain and source exceeds the reference voltage
which is internally set within IC, OCP will activate. This protection is a self-return type. This protection circuit is effective in
preventing damage due to sudden and unexpected incidents. However, the IC should not be used in applications
characterized by continuous operation of the protection circuit (e.g. when a load that significantly exceeds the output current
capability of the chip is connected).
- OVP (Over Voltage Protection)
This is the output over voltage protection circuit. When the output becomes 120%(Typ) or more of the target voltage, both
of the output MOSFETs are turned OFF and the regulator operation is stopped. When the output voltage becomes
110%(Typ) or less of the target voltage, it returns to normal operation.
- UVLO (Under Voltage Lock-Out)
UVLO is a protection circuit that prevents low voltage malfunction, especially during power up and down. It monitors the
VIN power supply voltage. If VIN becomes 15.0V(Max) or less, both of the output MOSFETs are turned OFF and the regulator
operation is stopped. When the input voltage becomes 16.0V(Max) or more, the regulator restarts the operation with Soft
Start.
- DRIVER
This circuit drives the gate of the output POWER MOSFETs.
- OVLO(Over Voltage Lock-Out)
This is the input over voltage protection circuit. When the input voltage becomes 60.0V(Min) or more, the regulator is
shutdown. When the input voltage becomes 59.0V(Min) or less the falling threshold, the regulator restarts the operation
with SOFT START. This hysteresis is 1.0V(Typ).
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Description of Blocks - continued
- PGD
The PGOOD circuit is a reference voltage monitoring circuit. The PGOOD pin sets to Hi-Z when the FB voltage is 90%(Typ)
or more and 110%(Typ) or less of reference voltage, otherwise the PGOOD pin is pulled down to GND. PGOOD detection
has a hysteresis of 20mV(Typ) for each of the upper and lower thresholds.
- SCP(Short Circuit Protection)
The short circuit protection circuit. Depending on the level of the VIN terminal voltage and VMON terminal voltage, a
reference pulse signal with varying ON time will be produced. If the SW ON time exceeds 2.5times(Typ) the ON time of this
reference pulse signal for 2clk cycles, short circuit protection will be activated. Then the Top and Bottom POWER MOSFETs
will be turned OFF.
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Absolute Maximum Ratings (Ta=25°C)
Parameter
Supply Voltage
EN Input Voltage
BST Voltage
Symbol
Rating
Unit
VIN, PVIN
-0.3 to +70
V
VEN
-0.3 to VIN
V
VBST
-0.3 to +70
V
VSW -0.3 to VSW + 7
V
-0.3 to +7
V
VMON Input Voltage
ΔVBST
VFB, VRT,
VCOMP,
VPGOOD
VVMON
-0.3 to +7
V
VREGH Input Voltage
VVREGH
-0.3 to +7
V
Tstg
-55 to +150
˚C
Tjmax
150
˚C
Voltage from SW to BST
FB, RT, COMP, PGOOD Input Voltage
Storage Temperature Range
Maximum Junction Temperature
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the
properties of the chip. In case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the maximum
junction temperature rating.
Thermal Resistance(Note 1)
Parameter
Symbol
Thermal Resistance(Typ)
1s(Note 3)
2s2p(Note 4)
Unit
VQFN24FV4040
Junction to Ambient
θJA
150.6
37.9
°C/W
Junction to Top Characterization Parameter(Note 2)
ΨJT
20
9
°C/W
(Note 1) Based on JESD51-2A (Still-Air)
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 3) Using a PCB board based on JESD51-3.
Layer Number of
Measurement Board
Single
Material
Board Size
FR-4
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70μm
(Note 4) Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
4 Layers
Material
Board Size
FR-4
114.3mm x 76.2mm x 1.6mmt
Top
2 Internal Layers
Thermal Via(Note 5)
Pitch
Diameter
1.20mm
Φ0.30mm
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70μm
74.2mm x 74.2mm
35μm
74.2mm x 74.2mm
70μm
(Note 5) This thermal via connects with the copper pattern of all layers.
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Recommended Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
VIN
16
-
60
V
Operating Temperature
Topr
-40
-
+125
˚C
Output Voltage
VOUT
0.8
-
5.5
V
tONMIN
-
9
20
ns
Power Supply Voltage
SW Minimum ON
Time(Note 1)
Output Current
IOUT
0
-
1
A
Switching Frequency
fSW
1.9
2.1
2.3
MHz
Input Capacitor(Note 2)
CIN
1.2
-
-
µF
Switching Frequency Setting Resistor
RRT
6.9
7.5
8.1
kΩ
(Note 1) This parameter is for 0.5A output. Not 100% tested.
(Note 2) Ceramic capacitor is recommended. The capacitor value including temperature change, DC bias change, and aging change must be larger than
minimum value (Refer to Selection of Input Capacitor CIN, CBLK on page 22). Also, the IC might not function properly when the PCB layout or the
position of the capacitor is not good. Please check PCB Layout Design on page 30.
Electrical Characteristics (Unless otherwise specified Ta=-40˚C to +125˚C, VIN=48V, VEN=5V)
Parameter
Symbol
Min
Shutdown Circuit Current
ISDN
-
0
Circuit Current
ICC
-
2.5
Reference Voltage
VFB
0.784
0.800
FB Input Current
Typ
Max
Unit
Conditions
5
µA
VEN=0V, Ta=105˚C
3.8
mA
VFB=2.0V
0.816
V
VFB=VCOMP
IFB
-1
0
+1
µA
VFB=5.0V
ICPSINK
35
60
85
µA
VCOMP=1.0V, VFB=2V
ICPSOURCE
-85
-60
-35
µA
VCOMP=1.0V, VFB=0V
tSS
0.7
1.1
1.5
ms
fSW=2.1MHz, RRT=7.5kΩ
Top Power NMOS ON Resistance
RONH
-
600
900
mΩ
IOUT=-50mA
Bottom Power NMOS ON Resistance
RONL
-
400
600
mΩ
Output Leak Current H
IOLEAKH
-5
0
+5
µA
Output Leak Current L
IOLEAKL
-5
0
+5
µA
IOUT=50mA
VIN=70V, VEN=0V
Ta=105˚C, VSW=0V
VIN=70V, VEN=0V
Ta=105˚C, VSW=70V
Operating Output Switch Current of
Overcurrent Protection
ISW
1.5
2.4
3.3
A
Oscillating Frequency
fSW
1.9
2.1
2.3
MHz
EN Threshold Voltage H
VENH
2.5
-
VIN
V
EN Threshold Voltage L
VENL
0
-
0.8
V
IEN
-
8.5
20
µA
VEN=5V
VUV_ON
12.5
13.7
15.0
V
VIN Falling
VUV_OFF
13.5
14.7
16.0
V
VIN Rising
VOV_ON
60.0
62.5
65.0
V
VIN Rising
VOV_OFF
59.0
61.5
64.0
V
VIN Falling
OVP Threshold Voltage H
VOVPH
0.87
0.96
1.05
V
VFB Rising
OVP Threshold Voltage L
VOVPL
V
VFB Falling
PGOOD L Hysteresis
VPGDLH
mV
PGOOD H Threshold
VPGDH
PGOOD H Hysteresis
VPGDHL
1.01
VFB
x 0.98
40
VFB
x 1.18
-4
VFB Falling
VPGDL
0.92
VFB
x 0.90
20
VFB
x 1.10
-20
V
PGOOD L Threshold
0.83
VFB
x 0.82
4
VFB
x 1.02
-40
PGOOD ON Resistance
RPGD
-
0.22
1
kΩ
IPGOOD=10mA
PGOOD Leak Current
IPGD
-
0
1
µA
VPGOOD=5V
COMP Pin Sink Current
COMP Pin Source Current
Soft Start Time(Note1)
EN Input Current
VIN Under Voltage Protection
Detection Voltage
VIN Under Voltage Protection
Return Voltage
VIN Over Voltage Protection
Detection Voltage
VIN Over Voltage Protection
Return Voltage
V
RRT=7.5kΩ
VFB Rising
mV
(Note 1) VFB transient time from 0.1V to 0.7V.
(Note 2) Not 100% tested.
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30
0.815
25
0.81
Reference Voltage : VFB [V]
SW Minimum ON Time : t ONMIN [ns]
Typical Performance Curves
20
15
10
0.8
0.795
5
0.79
0
0.785
0
200
400
600
800
Output Current : IOUT [mA]
-50
1000
0
50
100
Ambient Temperature : Ta [˚C]
150
Figure 4. SW Minimum ON Time vs Output Current
Figure 5. Reference Voltage vs Ambient Temperature
2.25
100
90
2.2
80
2.15
70
Efficiency [%]
Oscillating Frequency : fSW [MHz]
0.805
2.1
2.05
2
60
50
40
VIN=48V
30
1.95
20
1.9
10
1.85
0
-50
0
50
100
Ambient Temperature : Ta [˚C]
VIN=16V
0
150
Figure 6. Oscillating Frequency vs Ambient Temperature
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VIN=24V
0.2
0.4
0.6
0.8
Output Current : IOUT [A]
1
Figure 7. Efficiency vs Output Current
(VOUT=5.5V, fSW=1.9MHz)
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1
1
0.75
0.75
0.5
0.5
Line Regulation[%]
Load Regulation [%]
Typical Performance Curves - continued
0.25
0
-0.25
0.25
0
-0.25
-0.5
-0.5
-0.75
-0.75
-1
-1
0
200
400
600
800
Output Current : IOUT [mA]
16
1000
60
Figure 9. Line Regulation
(VOUT=5V, IOUT=500mA)
9
4
8
3.5
Ta=+125˚C
7
Circuit Current : ICC [mA]
Shutdown Circuit Current : ISDN [μA]
Figure 8. Load Regulation
(VIN=48V, VOUT=5V)
27
38
49
Power Supply Voltage : VIN [V]
6
5
4
Ta=+125˚C
3
Ta=-40 ˚C, +25˚C
3
2.5
2
Ta=+25˚C
1.5
Ta=-40˚C
1
2
0.5
1
0
0
16
27
38
49
Power Supply Voltage : VIN [V]
16
60
Figure 10. Shutdown Circuit Current vs
Power Supply Voltage (VEN=0V)
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27
38
49
Power Supply Voltage : VIN [V]
60
Figure 11. Circuit Current vs Power Supply Voltage
(VEN=VIN, No Switching)
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Typical Performance Curves - continued
VIN (20V/div)
VEN (20V/div)
VOUT (2V/div)
VOUT (2V/div)
VSW (20V/div)
VSW (20V/div)
Time (1s/div)
Time (500µs/div)
Figure 12. Startup Waveform
(VIN=48V, VOUT=5V, IOUT=0.5A)
Figure 13. Startup and Shutdown Waveform
(VIN=0V ↔ 70V, VOUT=5V, IOUT=0.5A)
VOUT (2V/div)
VSW (10V/div)
VOUT (2V/div)
VSW (10V/div)
Time (50ms/div)
Figure 14. VOUT Short and Release Waveform
(VIN=48V)
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Time (50ms/div)
Figure 15. SW Short and Release Waveform
(VIN=48V)
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350
3
300
2.5
Operating Output Switch Current of
Overcurrent Protection : ISW [A]
EN Input Current : IEN [μA]
Typical Performance Curves - continued
Ta=+125˚C
250
Ta=+25˚C
200
Ta=-40˚C
150
100
50
1.5
1
0.5
0
0
0
20
40
60
EN Input Voltage : VEN [V]
-50
80
Figure 16. EN Input Current vs EN Input Voltage
0
50
100
Ambient Temperature : Ta[˚C]
150
Figure 17. Operating Output Switching Current of Over
Current Protection vs Ambient Temperature
(VIN=48V, VOUT=5V)
900
800
800
700
Bottom Power NMOS ON Resistance
: R ONL [mΩ]
Top Power NMOS ON Resistance
: RONH [mΩ]
2
700
600
500
400
300
200
100
600
500
400
300
200
100
0
0
-50
0
50
100
Ambient Temperature : Ta[˚C]
-50
150
Figure 18. Top Power NMOS ON Resistance vs
Ambient Temperature
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0
50
100
Ambient Temperature : Ta[˚C]
150
Figure 19. Bottom Power NMOS ON Resistance vs
Ambient Temperature
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Typical Performance Curves - continued
5
3
Output Leak Current H : IOLEAKH [μA]
EN Threshold Voltage H : VENH [V]
4.5
2.5
2
1.5
1
0.5
4
3.5
3
2.5
Ta=+125˚C
2
Ta=-40˚C, +25˚C
1.5
1
0.5
0
0
-50
0
50
100
Ambient Temperature : Ta[˚C]
150
0
5
500
4.5
450
4
3.5
3
2.5
2
1.5
Ta=+125˚C
1
Ta=-40˚C, +25˚C
0.5
80
Figure 21. Output Leak Current H vs
Power Supply Voltage
(EN=0V, SW=VIN)
PGOOD ON Resistance : R PGD [Ω]
Output Leak Current L : IOLEAKL [μA]
Figure 20. EN Threshold Voltage H vs Ambient Temperature
(VIN=48V, VOUT=5V)
20
40
60
Power Supply Voltage : VIN [V]
400
350
300
250
200
150
100
50
0
0
0
20
40
60
Power Supply Voltage : VIN [V]
-50
80
Figure 22. Output Leak Current L vs Power Supply Voltage
(EN=0V, SW=GND)
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0
50
100
Ambient Temperature : Ta[˚C]
150
Figure 23. PGOOD ON Resistance vs Ambient Temperature
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Function Explanation
1.
Nano Pulse ControlTM
Nano Pulse ControlTM is an original technology developed by ROHM Co., Ltd. It enables to control voltage stably, which
is difficult in the conventional technology, even in a narrow SW ON Pulse such as less than 50ns at typical condition.
Therefore, high frequency switching operation become possible. BD9V100MUF-C is designed with 9ns(Typ) Minimum
SW ON time for current sense and 2.1MHz(Typ) switching frequency by using this technology.
(1) High VIN Low VOUT Operation
Narrow SW ON Pulse enables direct convert of high output voltage to low output voltage. BD9V100MUF-C, the
output voltage VOUT 3.3V can be output directly from the supply voltage VIN 60V at 2.1MHz.
VIN (10V/div) = 60V
VSW (10V/div)
fSW 2.1MHz
VOUT (10V/div) = 3.3V
Time (100ns/div)
Time (100ns/div)
Figure 24. Switching Waveform
(VIN=60V, VOUT=3.3V, IOUT=0.5A, fSW=2.1MHz)
Figure 25. VIN VOUT Waveform
(VIN=60V, VOUT=3.3V, IOUT=0.5A, fSW=2.1MHz)
(2) Stable Startup Waveform
Narrow SW ON Pulse enables stable output waveform even at startup. BD9V100MUF-C achieves a stable Soft Start
operation under wide input voltage conditions.
VEN (20V/div)
VEN (20V/div)
VSW (20V/div)
VSW (20V/div)
VOUT (1V/div)
VOUT (1V/div)
Time (500µs/div)
Time (500µs/div)
Figure 26. Startup Waveform
(VIN=16V, VOUT=3.3V, IOUT=0.5A, fSW=2.1MHz)
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Figure 27. Startup Waveform
(VIN=60V, VOUT=3.3V, IOUT=0.5A, fSW=2.1MHz)
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Function Explanation - continued
2.
Enable Operation
Shutdown and startup of the IC can be controlled by the voltage applied to the EN pin. When EN voltage reaches
2.5V(Max) or more, the internal VREGH activates and the IC operates. When an EN voltage become 0.8V(Max) or less,
the IC will be shutdown.
Figure 28. Enable ON/OFF Timing Chart
3.
Power Good
When the output voltage is within the voltage range of ±10%(Typ), the PGOOD pin set Hi-Z. When the output voltage is
outside the voltage range of ±10%(Typ), the PGOOD pin is pulled down with a built-in MOSFET of 0.22kΩ(Typ). Pull up
the PGOOD pin to VREGH with a resistor of about 10kΩ to 100kΩ.
Figure 29. PGOOD Timing Chart
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Protect function
1.
Under Voltage Lockout (UVLO)
Under Voltage Lockout monitors the VIN terminal voltages. When the VIN voltage is at 15.0V(Max) or less, both of the
output MOSFETs are turned OFF and the regulator operation is stopped. When the input voltage becomes 16.0V(Max)
or more, the regulator restarts the operation with Soft Start.
Figure 30. UVLO Timing Chart
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Protect function - continued
2.
Short Circuit Protection(SCP)
The Short Circuit Protection function produces a reference pulse that has an ON time derived from V IN and VOUT. This
reference pulse’s ON time is compared to the SW ON time. If the SW ON time exceeds 2.5times(Typ) of the expected
SW ON time, and remains in that state for 2clk (clk = 1/fSW) cycles, it will stop both of the output MOSFETs for 32ms(Typ)
and then restarts again. This protection circuit is effective in preventing damage due to sudden and unexpected incidents.
However, the IC should not be used in applications characterized by continuous operation of the protection circuit (e.g.
when a load that significantly exceeds the output current capability of the chip is connected).
The assumed SW ON Time is obtained from the following formula:
1
𝑡𝑝𝑢𝑙𝑠𝑒 = 2.1[𝑀𝐻𝑧] ×
1
𝑉𝑂𝑈𝑇
𝑉𝐼𝑁
𝑡𝑝𝑢𝑙𝑠𝑒_𝑐𝑙𝑎𝑚𝑝 = 2.1[𝑀𝐻𝑧] ×
[μs]
𝑉𝑂𝑈𝑇
𝑉𝐼𝑁
× 2.5 [μs]
Figure31. SCP Timing Chart
3.
Thermal Shutdown(TSD)
When the chip temperature exceeds Tj=175°C(Typ), both of the output MOSFETs are turned OFF and the VREGH is
stopped. The operation comes back when the chip temperature comes down to 150°C(Typ) or less. TSD prevents the
IC from thermal runaway under abnormal conditions exceeding Tjmax=150°C. The TSD circuit operates in a situation
that exceeds the absolute maximum ratings and therefore, under no circumstances should the TSD circuit be used in a
set design or for any purpose other than protecting the IC from heat damage.
Figure 32. TSD Timing Chart
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Protect function - continued
4.
Over Current Protection (OCP)
Over Current Protection detects the lower limit value of the inductor current. The OCP is designed at 2.4A(Typ). This
circuit prevents the Top POWER MOSFET from turning ON until the inductor current IL falls below the OCP limit ISW. If
OCP is detected 8times in 30µs(Typ), operation stops for 32ms(Typ) and then restarts again. This protection circuit is
effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in
applications characterized by continuous operation of the protection circuit (e.g. when a load that significantly exceeds
the output current capability of the chip is connected).
Figure 33. OCP Timing Chart
5.
Over Voltage Protection (OVP)
Over Voltage Protection compares the feedback voltage with an internal reference voltage. When the feedback voltage
exceeds 0.96V(Typ) or more, the Top and Bottom POWER MOSFETs will turn OFF. When the output voltage decreases
to a value of 0.92V(Typ) or less, it goes back to normal operation.
Figure 34. OVP Timing Chart
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Protect function - continued
6.
Over Voltage Lockout(OVLO)
Over Voltage Lockout monitors the VIN terminal voltage. When the VIN voltage is 60.0V(Min) or more, the chip will be
on standby mode, and when the VIN voltage is 59.0V(Min) or less, the chip will startup again.
Figure 35. OVLO Timing Chart
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Selection of Components Externally Connected
Contact us if not use the recommended constant in the application circuit.
Necessary parameters in designing the power supply are as follows:
Table 1. Application Specification
Parameter
Input Voltage
Symbol
Specification Case
VIN
16V to 60V
Output Voltage
VOUT
5.0V
Output Ripple Voltage
ΔVP-P
20mVp-p
Output Current
IOUT
Min 0.1A / Typ 0.5A / Max 1.0A
Switching Frequency
fSW
2.1MHz
Topr
-40°C to +125°C
Operating Temperature Range
Figure 36. Application Sample Circuit
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Selection of Components Externally Connected - continued
1.
Selection of the inductor LX value
Role of the coil in the switching regulator is that it also serves as a filter for smoothing the output voltage to supply a
continuous current to the load. The Inductor ripple current ΔIL that flows to the inductor becomes small when an inductor
with a large inductance value is selected. Consequently, the voltage of the output ripple ΔVP-P also becomes small. It is
the trade-off between the size and the cost of the inductor.
The inductance of the inductor is shown in the following equation:
𝐿=
(𝑉𝐼𝑁(𝑀𝑎𝑥) −𝑉𝑂𝑈𝑇 )×𝑉𝑂𝑈𝑇
[H]
𝑉𝐼𝑁(𝑀𝑎𝑥) ×𝑓𝑆𝑊 ×∆𝐼𝐿
Where:
𝑉𝐼𝑁 (𝑀𝑎𝑥)
𝑉𝑂𝑈𝑇
𝑓𝑆𝑊
𝛥𝐼𝐿
is the maximum input voltage
is the output voltage
is the switching frequency
is the peak to peak inductor current
In current mode control, sub-harmonic oscillation may happen. The slope compensation circuit is integrated into the IC
in order to prevent sub-harmonic oscillation. The sub-harmonic oscillation depends on the rate of increase of output
switch current. If the inductor value is too small, the sub-harmonic oscillation may happen because the inductor ripple
current ΔIL is increased. And if the inductor value is too large, the feedback loop may not achieve stability because the
inductor ripple current ΔIL is decreased. Therefore, use an inductor value of the coil within the range of 3.3µH to 10µH.
The smaller the ΔIL, the smaller the Inductor core loss (iron loss), and the smaller is the loss due to ESR of the output
capacitor. In effect, ΔVP-P (Output peak-to-peak ripple voltage) will be reduced. ΔVP-P is shown in the following equation.
∆𝑉𝑃−𝑃 = ∆𝐼𝐿 × 𝐸𝑆𝑅 + 8×𝐶
∆𝐼𝐿
𝑂𝑈𝑇 ×𝑓𝑆𝑊
[V]
(a)
Where:
𝐸𝑆𝑅
𝐶𝑂𝑈𝑇
𝛥𝐼𝐿
𝑓𝑆𝑊
is the equivalent series resistance of the output capacitor
is the output capacitance
is the peak to peak inductor current
is the switching frequency
Generally, even if ΔIL is somewhat large, the ΔVP-P target is satisfied because the ceramic capacitor has a very-low ESR.
It also contributes to the miniaturization of the application board. Also, because of the lower rated current, smaller inductor
is possible since the inductance is small. The disadvantages are increase in core losses in the inductor and the decrease
in maximum output current. When other capacitors (electrolytic capacitor, tantalum capacitor, and electro conductive
polymer etc.) are used for output capacitor COUT, check the ESR from the manufacturer's data sheet and determine the
ΔIL to fit within the acceptable range of ΔVP-P. Especially in the case of electrolytic capacitor, because the decrease in
capacitance at low temperatures is significantly large, this will make ΔVP-P increase. When using capacitor at low
temperature, this is an important consideration.
The shielded type (closed magnetic circuit type) is the recommended type of inductor to be used. Please note that
magnetic saturation may occur. It is important not to saturate the core in all cases. Precautions must be taken into account
on the given provisions of the current rating because it differs on every manufacturer. Please confirm the rated current
at maximum ambient temperature of application to the manufacturer.
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Selection of Components Externally Connected - continued
2.
Selection of Output Capacitor COUT
The output capacitor is selected based on the ESR that is required from the equation (a). ΔVP-P can be reduced by using
a capacitor with a small ESR. The ceramic capacitor is the best option that meets this requirement. It is because not only
does it has a small ESR but the ceramic capacitor also contributes to the size reduction of the application circuit. Please
confirm the frequency characteristics of ESR from the datasheet of the manufacturer, and consider a low ESR value for
the switching frequency being used. It is necessary to consider the ceramic capacitor because the DC biasing
characteristic is important. For the voltage rating of the ceramic capacitor, twice or more than the maximum output voltage
is usually required. By selecting a high voltage rating, it is possible to reduce the influence of DC bias characteristics.
Moreover, in order to maintain good temperature characteristics, the one with the characteristics of X7R or better is
recommended. Because the voltage rating of a large ceramic capacitor is low, the selection becomes difficult for an
application with high output voltage. In that case, please connect multiple ceramic capacitors in series or select
electrolytic capacitor. Consider having a voltage rating of 1.2 times or more of the output voltage when using electrolytic
capacitor. Electrolytic capacitors have a high voltage rating, large capacitance, small amount of DC biasing
characteristics, and are generally reasonable. Since the electrolytic capacitor is usually OPEN when it fails, it is effective
to use for applications when reliability is required such as automotive. But there are disadvantages such as, ESR is
relatively high, and decreases capacitance value at low temperatures. In this case, please take note that ΔVP-P may
increase at low temperature conditions. Moreover, consider the lifetime characteristic of this capacitor because it has a
possibility to dry up. A tantalum capacitor and a conductive polymer hybrid capacitor have excellent temperature
characteristics unlike the electrolytic capacitor. Moreover, since their ESR is smaller than an electrolytic capacitor, the
ripple voltage is relatively-small over a wide temperature range. Since these capacitors have almost no DC bias
characteristics, design will be easier. Regarding voltage rating, the tantalum capacitor is selected such that its
capacitance is twice the value of the output voltage, and for the conductive polymer hybrid capacitor, it is selected such
that the voltage rating is 1.2 times the value of the output voltage. The disadvantage of a tantalum capacitor is that it is
SHORTED when it is destroyed, and its breakdown voltage is low. It is not generally selected in an application that
reliability is a demand such as in automotive. An electro conductive polymer hybrid capacitor is OPEN when destroyed.
Though it is effective for reliability, its disadvantage is that it is generally expensive.
To improve the performance of ripple voltage in this condition, following is recommended:
1. Use low ESR capacitor like ceramic or conductive polymer hybrid capacitor.
2. Use a capacitor COUT with a higher capacitance value.
These capacitors are rated in ripple current. The RMS values of the ripple current that can be obtained in the following
equation must not exceed the ripple current rating.
𝐼𝐶𝑂(𝑅𝑀𝑆) =
∆𝐼𝐿
[A]
√12
Where:
𝐼𝐶𝑂(𝑅𝑀𝑆)
∆𝐼𝐿
is the value of the ripple electric current
is the peak to peak inductor current
In addition, for the total value of capacitance in the output line COUT(Max), choose a capacitance value less than the
value obtained by the following equation:
𝐶𝑂𝑈𝑇(𝑀𝑎𝑥) <
𝑡𝑆𝑆(𝑀𝑖𝑛) ×(𝐼𝑆𝑊(𝑀𝑖𝑛) −𝐼𝑆𝑊𝑆𝑇𝐴𝑅𝑇(𝑀𝑎𝑥) )
𝑉𝑂𝑈𝑇
[F]
Where:
𝐼𝑆𝑊(𝑀𝑖𝑛)
𝑡𝑆𝑆(𝑀𝑖𝑛)
𝐼𝑆𝑊𝑆𝑇𝐴𝑅𝑇(𝑀𝑎𝑥)
𝑉𝑂𝑈𝑇
is the OCP operation switch current (Min)
is the Soft Start Time (Min)
is the maximum output current during startup
is the output voltage
Startup failure may happen if the limits from the above-mentioned are exceeded. Especially if the capacitance value is
extremely large, over-current protection may be activated by the inrush current at startup preventing the output to turn
on. Please confirm this on the actual application. For stable transient response, the loop is dependent to COUT. Please
select after confirming the setting of the phase compensation circuit.
Also, in case of large changing input voltage and load current, select the capacitance accordingly by verifying that the
actual application setup meets the required specification.
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Selection of Components Externally Connected - continued
3.
Selection of Input Capacitor CIN, CBLK
The input capacitor is usually required for two types of decoupling: capacitors C IN and bulk capacitors CBLK . Ceramic
capacitors with values more than 1.2µF are necessary for the decoupling capacitor CIN. Ceramic capacitors are effective
by placing it as close as possible to the VIN pin. The voltage rating of the capacitors is recommended to be more than
1.2 times the maximum input voltage, or twice the normal input voltage. The capacitor value including device variation,
temperature change, DC bias change, and aging change must be larger than minimum value. Also, the IC might not
operate properly when the PCB layout or the position of the capacitor is not good. Please check “Notes on the PCB
Layout” on page 30.
The bulk capacitor is optional. The bulk capacitor prevents the decrease in the line voltage and serves as a backup
power supply to keep the input voltage constant. A low ESR electrolytic capacitor with large capacitance is suitable for
the bulk capacitor. It is necessary to select the best capacitance value for each set of application. In that case, please
take note not to exceed the rated ripple current of the capacitor.
The RMS value of the input ripple current ICIN(RMS) is obtained in the following equation:
𝐼𝐶𝐼𝑁(𝑅𝑀𝑆) = 𝐼𝑂𝑈𝑇(𝑀𝐴𝑋) ×
√𝑉𝑂𝑈𝑇 ×(𝑉𝐼𝑁 −𝑉𝑂𝑈𝑇 )
𝑉𝐼𝑁
[A]
Where:
𝐼𝑂𝑈𝑇(𝑀𝐴𝑋)
is the maximum output current.
In addition, in automotive and other applications requiring high reliability, it is recommended to connect the capacitors in
parallel to accommodate multiple electrolytic capacitors and minimize the chances of drying up. For ceramic capacitors,
it is recommended to make two series + two parallel structures to decrease the risk of capacitor destruction due to short
circuit conditions.
When the impedance on the input side is high for some reason (because the wiring from the power supply to VIN is long,
etc.), then high capacitance is needed. In actual conditions, it is necessary to verify that there are no problems like IC
turns off, or the output overshoots due to the change in VIN at transient response.
4.
Selection of Output Voltage Setting Resistance RFB1, RFB2
The output voltage is described by the following equation:
𝑉𝑂 = 0.8 ×
𝑅𝐹𝐵1 +𝑅𝐹𝐵2
𝑅𝐹𝐵2
[V]
Power efficiency is reduced with a small RFB1 + RFB2, please set the current flowing through the feedback resistors as
small as possible in comparison to the output current IOUT.
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Selection of Components Externally Connected - continued
5. Selection of the Phase Compensation Circuit RCOMP, CCOMP
A good high frequency response performance is achieved by setting the 0dB crossing frequency, fc, (frequency at 0dB
gain) high. However, you need to be aware of the trade-off correlation between speed and stability. Moreover, DC / DC
converter application is sampled by switching frequency, so the gain of this switching frequency must be suppressed. It
is necessary to set the 0dB crossing frequency to 80kHz or less of the switching frequency. In general, target these
characteristics as follows:
- At 0dB crossing frequency, fc, phase lag should be 135˚ or less (phase margin is 45˚ or more).
- The 0dB crossing frequency, fc, must be 80kHz or less.
Achieving stability by using phase compensation is done by cancelling the f P1 and fP2 (error amp pole and power stage
pole) of the feedback loop by the use of fZ1. fP1, fP2 and fZ1 are determined in the following equations:
𝑓𝑍1 = 2𝜋×𝑅
𝑓𝑃1 =
1
𝐶𝑂𝑀𝑃 ×𝐶𝐶𝑂𝑀𝑃
1
2𝜋×𝐶𝑂𝑈𝑇 ×𝑅𝑂𝑈𝑇
𝑓𝑃2 = 2𝜋×𝐶
𝐺𝐸𝐴
𝐶𝑂𝑀𝑃 ×𝐴𝑉
[Hz]
[Hz]
[Hz]
Where:
𝑅𝑂𝑈𝑇
𝐺𝐸𝐴
𝐴𝑉
is the resistance assumed actual load[Ω] = Output Voltage[V] / Output Current[A]、
is the Error Amp trans conductance (300µA/V)
is the Error Amp Voltage Gain (63dB)
Figure 37. Setting the Phase Compensation Circuit
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Selection of Components Externally Connected - continued
6.
Selection of the Switching Frequency Setting Resistance RRT
The internal switching frequency can be set by connecting a resistor between RT and GND.
The range of frequency that can be set is 1.9MHz to 2.3MHz, and the relation between resistance and the switching frequency is
decided as shown in the figure below. When setting beyond this range, there is a possibility that there is no oscillation and IC operation
cannot be guaranteed.
Table 2. RRT vs fSW
RRT [kΩ]
6.8
7.5
8.2
2.6
2.5
2.4
fSW [MHz]
2.26
2.10
1.96
fSW [MHz]
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
6
7
8
RRT[kΩ]
9
10
Figure 38. Switching Frequency
vs Switching Frequency Setting Resistance
7.
Selection of the Bootstrap Capacitor and Resistor
Bootstrap capacitor CBST value shall be 0.022μF. Bootstrap resistor RBST value shall be 3.3Ω. Connect the bootstrap
capacitor in series with the bootstrap resistor between SW pin and BST pin. Recommended products are described in
Application Examples1 on page 25.
8.
Selection of the VREGH Capacitor.
VREGH capacitor CVREGH shall be 2.2μF ceramic capacitor. Connect the VREGH capacitor between VREGH pin and
GND.
9.
Selection of the VMON Resistor
At the time of VOUT short circuit, current may be drawn from the VMON terminal due to an inductive load. Connect a
resistor to limit that current. VMON resistor RVOUT shall be 2kΩ.
10. Soft Start Time
Soft Start prevents the overshoot of the output voltage. It changes in proportion to the switching frequency fSW. Soft start
time at fSW 2.1MHz(Typ) is 1.1ms(Typ). The production tolerance of tSS is ±36%. tSS can be calculated by using the
equation.
𝑡𝑆𝑆 =
2310
𝑓𝑠𝑤
[s]
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Application Examples1
Table 3. Specification Example 1
Parameter
Product Name
Input Voltage
Symbol
Specification Case
IC
BD9V100MUF-C
VIN
16V to 60V
Output Voltage
VOUT
5.0V
Output Ripple Voltage
ΔVP-P
20mVp-p
Output Current
IOUT
0A to 1.0A
Switching Frequency
fSW
2.1MHz
Operating Temperature
Topr
-40°C to +125°C
Figure 39. Reference Circuit 1
Table 4. Parts List 1
No
Package
Parameters
Part Name (Series)
Type
Manufacturer
CBLK
-
-
-
-
-
CIN1
3225
4.7µF, X7R, 50V
GCM32ER71H475K
Ceramic
MURATA
CIN2
3225
4.7µF, X7R, 50V
GCM32ER71H475K
Ceramic
MURATA
CIN3
1608
0.1µF, X7R, 50V
GCM188R71H104K
Ceramic
MURATA
CIN4
1608
0.1µF, X7R, 50V
GCM188R71H104K
Ceramic
MURATA
CBST
1608
0.022µF, X7R, 50V
GCM188R71H223K
Ceramic
MURATA
RBST
1608
3.3Ω, 5%, 1/10W
MCR03EZPJ3R3
Chip Resistor
ROHM
CVREGH
2012
2.2µF, X7R ,16V
GCM21BR71C225K
Ceramic
MURATA
RPGD
1608
100kΩ, 0.5%, 1/10W
MCR03EZPD1003
Chip Resistor
ROHM
RVOUT
1608
2.0kΩ, 0.5%, 1/10W
MCR03EZPD2001
Chip Resistor
ROHM
R100
-
Short
-
-
-
RFB1
1608
43kΩ, 0.5%, 1/10W
MCR03EZPD4302
Chip Resistor
ROHM
RFB2
1608
8.2kΩ, 0.5%, 1/10W
MCR03EZPD8201
Chip Resistor
ROHM
RRT
1608
7.5kΩ, 0.5%, 1/10W
MCR03EZPD7501
Chip Resistor
ROHM
RCOMP
1608
51kΩ, 0.5%, 1/10W
MCR03EZPD5102
Chip Resistor
ROHM
CCOMP
1608
1000pF, X7R, 50V
GCM188R71H102K
Ceramic
MURATA
LX
-
4.7µH
CLF6045NIT-4R7N-D
Inductor
TDK
COUT1
3225
22µF, X7R, 16V
GCM32ER71C226K
Ceramic
MURATA
COUT2
3225
22µF, X7R, 16V
GCM32ER71C226K
Ceramic
MURATA
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Application Examples1 - continued
VOUT(10mV/div)
Phase
Gain
Time (500ns/div)
Figure 40. Frequency Characteristics
(VIN=48V, VOUT=5V, IOUT=500mA)
Figure 41. Ripple Voltage
(VIN=48V, VOUT=5V, IOUT=500mA)
VOUT(10mV/div)
VOUT(100mV/div)
IOUT(500mA/div)
VIN(20V/div)
Time (200µs/div)
Figure 43. VIN Transient Response
(VIN=16V ↔ 60V, VOUT=5V, IOUT=500mA)
Figure 42. VIN Load Response
(VIN=48V, VOUT=5V, IOUT=0A ↔ 1A)
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Application Examples2
Table 5. Specification Example 2
Parameter
Symbol
Specification Case
Product Name
IC
BD9V100MUF-C
Input Voltage
VIN
16V to 60V
Output Voltage
VOUT
3.3V
Output Ripple Voltage
ΔVP-P
20mVp-p
Output Current
IOUT
0A to 1.0A
Switching Frequency
fSW
2.1MHz
Topr
-40°C to +125°C
Operating Temperature
Figure 44. Reference Circuit 2
Table 6. Parts List 2
No
Package
Parameters
Part Name (Series)
Type
Manufacturer
CBLK
-
-
-
-
-
CIN1
3225
4.7µF, X7R, 50V
GCM32ER71H475K
Ceramic
MURATA
CIN2
3225
4.7µF, X7R, 50V
GCM32ER71H475K
Ceramic
MURATA
CIN3
1608
0.1µF, X7R, 50V
GCM188R71H104K
Ceramic
MURATA
CIN4
1608
0.1µF, X7R, 50V
GCM188R71H104K
Ceramic
MURATA
CBST
1608
0.022µF, X7R, 50V
GCM188R71H223K
Ceramic
MURATA
RBST
1608
3.3Ω, 5%, 1/10W
MCR03EZPJ3R3
Chip Resistor
ROHM
CVREGH
2012
2.2µF, X7R ,16V
GCM21BR71C225K
Ceramic
MURATA
RPGD
1608
100kΩ, 0.5%, 1/10W
MCR03EZPD1003
Chip Resistor
ROHM
RVOUT
1608
2.0kΩ, 0.5%, 1/10W
MCR03EZPD2001
Chip Resistor
ROHM
R100
-
Short
-
-
-
RFB1
1608
47kΩ, 0.5%, 1/10W
MCR03EZPD4702
Chip Resistor
ROHM
RFB2
1608
15kΩ, 0.5%, 1/10W
MCR03EZPD1502
Chip Resistor
ROHM
RRT
1608
7.5kΩ, 0.5%, 1/10W
MCR03EZPD7501
Chip Resistor
ROHM
RCOMP
1608
75kΩ, 0.5%, 1/10W
MCR03EZPD7502
Chip Resistor
ROHM
CCOMP
1608
560pF, X7R, 50V
GCM188R71H561K
Ceramic
MURATA
LX
-
4.7µH
CLF6045NIT-4R7N-D
Inductor
TDK
COUT1
3225
22µF, X7R, 16V
GCM32ER71C226K
Ceramic
MURATA
COUT2
3225
22µF, X7R, 16V
GCM32ER71C226K
Ceramic
MURATA
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Application Examples2 - continued
VIN (10mV/div)
Phase
Gain
Time (500ns/div)
Figure 45. Frequency Characteristics
(VIN=48V, VOUT=3.3V, IOUT=500mA)
Figure 46. Ripple Voltage
(VIN=48V, VOUT=3.3V, IOUT=500mA)
VOUT (100mV/div)
VOUT (10mV/div)
IOUT (500mA/div)
VIN (20V/div)
Time (5ms/div)
Time (200µs/div)
Figure 48. VIN Transient Response
(VIN=16V ↔ 60V, VOUT=3.3V, IOUT=500mA)
Figure 47. VIN Load Response
(VIN=48V, VOUT=3.3V, IOUT=0A ↔ 1A)
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Automotive Power Supply Line Circuit
BATTERY
LINE
Reverse-Touching
Protection Diode
D
VIN
BD9V100MUF-C
L
C
TVS
C
π-type filter
Figure 49. Automotive Power Supply Line Circuit
As a reference, the automotive power supply line circuit example is given in Figure 49.
π-type filter is a third-order LC filter. In general, it is used in combination with decoupling capacitors for high frequency.
Large attenuation characteristics can be obtained and thus excellent characteristic as a EMI filter. Devices used for π-type
filters should be placed close to each other.
TVS (Transient Voltage Suppressors) is used for primary protection of the automotive power supply line. Since it is necessary
to withstand high energy of load dump surge, a general zener diode is insufficient. Recommended device is shown in the
following table.
In addition, a reverse polarity protection diode is needed considering if a power supply such as BATTERY is accidentally
connected in the opposite direction.
Device
Table 7. Reference Parts of Automotive Power Supply Line Circuit
Part name (series)
Manufacturer
Device
Part name (series)
Manufacturer
L
CLF series
TDK
TVS
SMB series
Vishay
L
XAL series
Coilcraft
D
S3A to S3M series
Vishay
C
CJ series / CZ series
NICHICON
Recommended Parts Manufacturer List
Shown below is the list of the recommended parts manufacturers for reference.
Type
Manufacturer
URL
Electrolytic Capacitor
NICHICON
www.nichicon-us.com
Ceramic Capacitor
Murata
www.murata.com
Inductor
TDK
product.tdk.com
Inductor
Coilcraft
www.coilcraft.com
Inductor
SUMIDA
www.sumida.com
Diode
Vishay
www.vishay.com
Resistor
ROHM
www.rohm.com
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PCB Layout Design
PCB layout design for DC/DC converter power supply IC is as important as the circuit design. Appropriate layout can avoid
various problems caused by power supply circuit. Figure 50-a to 50-c show the current path in a buck converter circuit. The
Loop 1 in Figure 50-a is a current path when H-side switch is ON and L-side switch is OFF, the Loop 2 in Figure 50-b is when
H-side switch is OFF and L-side switch is ON. The thick line in Figure 50-c shows the difference between Loop1 and Loop2.
The current in thick line change sharply each time the switching element H-side and L-side switch change from OFF to ON,
and vice versa. These sharp changes induce several harmonics in the waveform. Therefore, the loop area of thick line that
is consisted by input capacitor and IC should be as small as possible to minimize noise. For more detail refer to application
note of switching regulator series “PCB Layout Techniques of Buck Converter”.
Loop1
VIN
H-side switch
VOUT
L
CIN
COUT
L-side switch
GND
GND
Figure 50-a. Current path when H-side switch = ON, L-side switch = OFF
VIN
VOUT
L
H-side switch
CIN
COUT
Loop2
L-side switch
GND
GND
Figure 50-b. Current path when H-side switch = OFF, L-side switch = ON
VIN
VOUT
L
CIN
H-side FET
COUT
L-side FET
GND
GND
Figure 50-c. Difference of current and critical area in layout
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PCB Layout Design - continued
When designing the PCB layout, please pay extra attention to the following points:
- Place input capacitor on the same PCB surface as the IC and as close as possible to the IC’s PVIN terminal.
- Switching nodes should be traced as thick and short as possible to the inductor, because they may induce the noise
to the other nodes due to AC coupling.
- Please keep the lines connected to FB and COMP away from the SW node as far as possible.
- Please place output capacitor away from input capacitor to avoid harmonics noise from the input.
- R100 is an option, used for feedback’s frequency response measurement.
By inserting a resistor at R100, it is possible to measure the frequency response (phase margin) using a FRA.
However, the resistor will not be used in actual application, please use this resistor pattern in short-circuit mode.
Figure 51. Evaluation Board Layout Example
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Power Dissipation
For thermal design, be sure to operate the IC within the following conditions.
(Since the temperatures described hereunder are all guaranteed temperatures, take margin into account.)
1.
2.
The ambient temperature Ta is to be 125 °C or less.
The chip junction temperature Tj is to be 150 °C or less.
The chip junction temperature Tj can be considered in the following two patterns:
1.
To obtain Tj from the package surface center temperature Tt in actual use
𝑇𝑗 = 𝑇𝑡 + 𝜓𝐽𝑇 × 𝑊 [°C]
2.
To obtain Tj from the ambient temperature Ta
𝑇𝑗 = 𝑇𝑎 + 𝜃𝐽𝐴 × 𝑊 [°C]
Where:
𝜓𝐽𝑇
𝜃𝐽𝐴
is junction to top characterization parameter (Refer to page 6)
is junction to ambient (Refer to page 6)
The heat loss W of the IC can be obtained by the formula shown below:
𝑉𝑂𝑈𝑇
𝑉𝑂𝑈𝑇
+ 𝑅𝑂𝑁𝐿 × 𝐼𝑂𝑈𝑇 2 (1 −
)
𝑉𝐼𝑁
𝑉𝐼𝑁
1
+𝑉𝐼𝑁 × 𝐼𝐶𝐶 + 2 × (𝑡𝑟 + 𝑡𝑓) × 𝑉𝐼𝑁 × 𝐼𝑂𝑈𝑇 × 𝑓𝑆𝑊 [W]
𝑊 = 𝑅𝑂𝑁𝐻 × 𝐼𝑂𝑈𝑇 2 ×
Where:
𝑅𝑂𝑁𝐻
𝑅𝑂𝑁𝐿
𝐼𝑂𝑈𝑇
𝑉𝑂𝑈𝑇
𝑉𝐼𝑁
𝐼𝐶𝐶
𝑡𝑟
𝑡𝑓
𝑓𝑆𝑊
is the Top Power NMOS ON Resistance (Refer to page 7) [Ω]
is the Bottom Power NMOS ON Resistance (Refer to page 7) [Ω]
is the Load Current [A]
is the Output Voltage [V]
is the Input Voltage [V]
is the Circuit Current (Refer to page 7) [A]
is the Switching Rise Time [s] (Typ:10ns)
is the Switching Fall Time [s] (Typ:10ns)
is the Switching Frequency [Hz]
1.
𝑅𝑂𝑁𝐻 × 𝐼𝑂𝑈𝑇 2
2.
𝑅𝑂𝑁𝐿 × 𝐼𝑂𝑈𝑇 2
3.
1
2
× (𝑡𝑟 + 𝑡𝑓) × 𝑉𝐼𝑁 × 𝐼𝑂 × 𝑓𝑆𝑊
Figure 52. SW Waveform
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I/O Equivalent Circuit
1. EN
13,14 SW
PVIN
EN
400kΩ
SW
572kΩ
15. BST
17. VREGH
PVIN
10Ω
BST
VREGH
VREGH
SW
18. PGOOD
19. RT
VREGH
PGOOD
180Ω
RT
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I/O Equivalent Circuit - continued
20. COMP
22. FB
VREGH
VREGH
VREGH
FB
1kΩ
1kΩ
COMP
23. VMON
VREGH
VMON
280kΩ
50kΩ
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Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
pins.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic
capacitors.
3.
Ground Voltage
Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a
voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended operating
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical
characteristics.
6.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
7.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
8.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned off completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
9.
Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and
unintentional solder bridge deposited in between pins during assembly to name a few.
10. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power
supply or ground line.
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Operational Notes – continued
11. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Pin B
B
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
GND
GND
Parasitic
Elements
GND
Parasitic
Elements
GND
N Region
close-by
Figure 53. Example of monolithic IC structure
12. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
13. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within
the Area of Safe Operation (ASO).
14. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls
below the TSD threshold, the circuits are automatically restored to normal operation.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat
damage.
15. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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BD9V100MUF-C
Ordering Information
B
D
9
V
1
0
Part Number
0
M
U
F
-
Package
MUF: VQFN24FV4040
CE2
Product Rank
C:for Automotive
Packaging Specification
E2: Embossed tape and reel
Marking Diagrams
VQFN24FV4040 (TOP VIEW)
Part Number Marking
9 V 1 0 0
LOT Number
1PIN MARK
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Physical Dimension, Tape and Reel Information
Package Name
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Revision History
Date
Revision
01.Jun.2017
001
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Notice
Precaution on using ROHM Products
1.
(Note 1)
If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
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