BH15PB1WHFV-TR

CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□PB1WHFV Series No.11020EBT05 ●Description The BH□□PB1WHFV regulator series can respond to changes in output current by switching to a state in which regulator characteristics are ideal. The regulators cut power consumption by lowering their own current consumption to approximately 2 A when the application is operating in the standby state. During normal-current operation it will automatically switch to high-speed operating mode. The IC's soft start function reduce the rush current that flows to the output capacitors during startup. The HVSOF5 package, which features excellent heat dissipation, contributes to space-saving application designs. ●Features 1) Automatic switching between low-consumption and high-speed modes 2) Built-in rush current prevention circuit 3) Low-voltage 1.7 V operation 4) High accuracy output voltage: ± 1% 5) Circuit current during low-consumption operation: 2 A 6) Stable with a ceramic capacitor (0.47 µF) 7) Built-in temperature and overcurrent protection circuits 8) Built-in output discharge during standby operation function 9) Ultra-small HVSOF5 power package ●Applications Battery-driven portable devices, etc. ●Product lineup 150 mA BH□□PB1WHFV Series Product name BH□□PB1WHFV 1.2 √ 1.5 √ 1.8 √ 2.5 √ 2.8 √ 2.9 √ 3.0 √ 3.1 √ 3.3 √ Package HVSOF5 Model name: BH□□PB1W□ a b Symbol □□ 12 a 15 18 25 28 b Description Output voltage specification Output voltage (V) 1.2 V (Typ.) 1.5 V (Typ.) 1.8 V (Typ.) 2.5 V (Typ.) 2.8 V (Typ.) Package HFV: HVSOF5 □□ 29 30 31 33 Output voltage (V) 2.9 V (Typ.) 3.0 V (Typ.) 3.1 V (Typ.) 3.3 V (Typ.) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.01 - Rev.B BH□□PB1WHFV Series ●Absolute maximum ratings (Ta = 25°C) Parameter Power supply voltage Power dissipation Operating temperature range Storage temperature range Junction temperature Symbol VMAX Pd Topr Tslg Tjmax Ratings −0.3 to +6.5 410 *1 −40 to +85 −55 to +125 125 Unit V mW °C °C °C Technical Note *1: Reduced by 4.1 mW/°C over 25°C, when mounted on a glass epoxy board (70 mm  70 mm  1.6 mm) ●Recommended operating ranges (not to exceed Pd) Parameter Power supply voltage Output MAX current Symbol VIN IMAX Ratings 1.7 to 5.5 0 to 150 Unit V mA ●Recommended operating conditions Parameter Input capacitor Output capacitor Symbol CIN CO Ratings Min. 0.33 *2 0.33 *2 Typ. 0.47 0.47 Max. − − Unit µF µF Conditions The use of ceramic capacitors is recommended. The use of ceramic capacitors is recommended. *2: Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic. And also make sure that the capacitor value can not change as time progresses. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.01 - Rev.B BH□□PB1WHFV Series Technical Note ●Electrical characteristics (Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V, STBY = 1.5 V, SEL = 0 V, CIN = 0.47 µF, CO = 0.47 µF) Limits Parameter Symbol Unit Conditions Min. Typ. Max.. 【Regulator】 Output voltage (high-speed mode) Output voltage (low-consumption mode) Circuit current (high-speed mode) Circuit current (low-consumption mode) Circuit current (STBY) Ripple rejection ratio (high-speed mode) Dropout voltage 1 *1 Dropout voltage 2 *1 Dropout voltage 3 *1 Line regulation 1 (high-speed mode) Line regulation 2 (low-consumption mode) Load regulation 【Mode switch】 Current threshold (low-consumption mode) Current threshold (high-speed mode) 【Over Current Protection 1】 Limit Current Short current 【Stand-by block】 STBY pin sink current STBY control voltage ON OFF ISTB VSTBH VSTBL 1.5 -0.3 1.5 2 2.2 4 VIN 0.3 3.0 μA V V kΩ STBY=0V STBY=1.5V VOUT1 VOUT1 ×0.99 VOUT1 -0.025 VOUT2 ×0.97 VOUT2 ×0.967 20 2 60 100 210 315 2 2 10 VOUT2 ICC1 ICC2 ISTBY RR1 VSAT1 VSAT2 VSAT3 VDL1 VDL2 VDLO VOUT1 ×1.01 VOUT1 +0.025 VOUT2 ×1.038 VOUT2 ×1.043 V V V V μA μA μA dB mV mV mV mV mV mV VOUT≧2.5V,IOUT=0.1mA,SEL=1.5V VOUT≦1.8V,IOUT=0.1mA,SEL=1.5V VOUT≧2.5V,IOUT=0.1mA,SEL=0V VOUT≦1.8V,IOUT=0.1mA,SEL=0V IOUT=0mA, VIN pin monitor,SEL=1.5V IOUT=0mA, VIN pin monitor, SEL=0V STBY=0V VRR=-20dBv, fRR=1kHz, IOUT=10mA, SEL=1.5V VIN=VOUT×0.98,IOUT=50mA VIN=VOUT×0.98,IOUT=100mA VIN=VOUT×0.98,IOUT=150mA VIN=VOUT+1V to 5.5V,IOUT=10mA VIN=VOUT+1V to 5.5V,IOUT=100μA IOUT=10mA to 100mA 42 - 40 4 1.0 200 400 600 20 20 40 ITH1 ITH2 0.09 - 0.3 1.2 2.2 mA mA SEL=0V IOUT=3mA⇒0mA sweep SEL=0V IOUT=0mA⇒3mA sweep ILMAX ISHORT 160 20 300 50 500 100 mA mA Vo=VOUT×0.90 Vo=0V Discharge resistance at standby RDCG 【SEL PIN】 Pull-down resistance of SEL pin SEL control voltage ON OFF RSEL VSELH VSELL 0.5 1.5 -0.3 1.0 - 2.0 VIN 0.3 MΩ V V Fixed high speed mode Automatic switch mode * Note: This IC is not designed to be radiation-resistant. *3: Except at VOUT ≤ 1.5 V. ●Electrical characteristics of each output voltage Output Voltage Parameter Min. 1.2 V 1.5 V 1.8 V ≤ VOUT Max. output current 70 150 50 150 75 150 Typ. 120 − 100 − 143 − Max. − − − − − − Unit VCC = 1.7 V VCC = 2.0 V mA VCC = 1.8 V VCC = 2.2 V Conditions VCC = VOUT + 0.3 V VCC = VOUT + 0.6 V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.01 - Rev.B BH□□PB1WHFV Series ●Typical characteristics 4.0 3.5 Output Voltage VOUT [V] Output Voltage VOUT [V] 4.0 3.5 Out put Volt age VOUT [V] 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 Technical Note 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 Input Voltage VIN [V] 5 IO = 10 mA 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 Input Voltage VIN [V] 5 IO = 10 mA IO = 10 mA 0 1 2 3 4 Input Voltage VIN [ V] 5 Fig.1 Output Voltage vs Input Voltage (BH12PB1WHFV) 70 60 GND Current IGND [μ A] 50 40 30 20 10 0 0 1 2 3 4 Input Voltage VIN [ V] 5 Fig.2 Output Voltage vs Input Voltage (BH30PB1WHFV) 3.5 Fig.3 Output Voltage vs Input Voltage (BH33PB1WHFV) 400 I nput Output Voltage difference VSAT [mV] IO = no load Output Voltage VOUT [V] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 IO = no load IO = no load 300 200 SEL = 1.5 V SEL = 1.5 V SEL = 1.5 V 100 SEL = 0 V SEL = 0 V 100 200 300 Output Current I OUT [mA] 400 SEL = 0 V 0 0 50 100 Output Current IOUT [mA] 150 (BH30PB1WHFV) (BH12PB1WHFV) 3.5 3.0 O ut put Volt age VOUT [V] 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 Output Current IOUT [mA] 400 Output Voltage VOUT [V] 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 (BH33PB1WHFV) (BH30PB1WHFV) Fig.6 GND Current vs－Input Voltage (BH33PB1WHFV) 3.5 3.0 Output Voltage VOUT [V] 2.5 2.0 1.5 1.0 0.5 0.0 100 200 300 Output Current I OUT [mA] 400 0 100 200 300 Output Current I OUT [mA] 400 (BH30PB1WHFV) (BH12PB1WHFV) 3.5 3.0 Out put Volt age VO UT [V] 2.5 2.0 1.5 1.0 0.5 0.0 0 100 200 300 O utput Current IO UT [ mA] 400 Fig.8 Output Voltage vs Output Current (BH30PB1WHFV) 400 Input Output Voltage difference VOUT [mV] Fig.9 Output Voltage vs Output Current (BH33PB1WHFV) 400 I nput Output Voltage difference VSAT [mV] 300 300 200 200 100 100 0 0 50 100 Output Current IO UT [ mA] 150 0 0 50 100 Output Current IOUT [mA] 150 Fig.10 Dropout voltage vs Output Current (BH18PB1WHFV) Fig.11 Dropout voltage vs Output Current Fig.12 Dropout voltage vs Output Current (BH33PB1WHFV) (BH30PB1WHFV) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/10 2011.01 - Rev.B BH□□PB1WHFV Series Technical Note 3.2 4 6 Standby Pin Sink Current ISTBY[µA] 5 4 3 2 1 0 0.0 0.5 1.0 VSTBY[V] 1.5 2. 0 O ut put Volt age VOUT[V] Out put Volt age VOUT[V] 3.1 3 3.0 2 2.9 1 2 .8 -50 -25 0 25 50 Temp[℃ ] 75 100 0 0.0 1.0 2.0 3.0 VSTBY[V] 4.0 5.0 Fig.13 Output Voltage vs Temperature (BH30PB1WHFV) 80 70 Ripple Rejection R.R.[dB] Ripple Rejection R.R.[dB] 60 50 40 30 20 10 100 80 70 Fig.14 Standby Pin Threshold (BH30PB1WHFV) Fig.15 Standby Pin Sink Current (BH30PB1WHFV) SEL 60 50 40 30 20 10 SEL = 0 V  1.5 1 V / div VOUT Co = 0.47 µF IO = 10 mA 100 1k 10 k 100 Frequency f[Hz] 1M 50 mV / div Co = 0.47 µF IO = 10 mA 1k 10 k 100 Frequency f[Hz] 1M IO = no load 10 ms / div Fig.16 Ripple Rejection (BH12PB1WHFV) Fig.17 Ripple Rejection (BH30PB1WHFV) Fig.18 Output Voltage Waveform During SEL Switching (BH30PB1WHFV) IOUT = 0 mA  10 mA IOUT = 1 mA  30 mA IOUT = 1 mA  100 50 mV / div VOUT SEL = 0 V (power-saving operation) 50 mV / div VOUT VOUT 100 mV / div 100 s / div SEL = 1.5 V 200 s / div 200 s / div Fig.19 Load Response (Co = 1.0 µF) (BH30PB1WHFV) 1 V / div Fig.20 Load Response (Co=1.0 µF) (BH30PB1WHFV) Fig.21 Load Response (Co=1.0 µF) (BH30PB1WHFV) 100 m Startup time Trise [sec] STBY STBY 1 V / div Rss = 10 k, IO = no load 10 m 1 V / div Co = 0.47 µF VOUT Co = 2.2 µF Co = 1 µF Co = 0.47 µF 1.0µ VOUT Co = 10 µF 200 s / div 1 V / div 10 ms / div 100 µ 0.01µ 0.1 µ 1.0µ Slow start capacitance Css (F) Fig.22 Output Voltage Rise Time (BH30PB1WHFV) Fig.23 Output Voltage Fall Time (BH30PB1WHFV) Fig.24 Soft Start Rise Time (BH30PB1WHFV) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/10 2011.01 - Rev.B BH□□PB1WHFV Series ●Block diagram, recommended circuit diagram, and pin assignment table BH□□PB1WHFV PIN No. 1 2 3 4 5 Symbol STBY GND VIN VOUT SEL Ground Power supply input Voltage output Function Technical Note Output voltage on/off control(High: ON, Low: OFF) Mode switching (High: Fix in high-speed mode Low: Automatic low-consumption mode switching) VIN 3 Cin + CH1 VOLTAGE GND REFERENCE THERMAL & OVER CURRENT PROTECTION VOUT 4 Co 2 + SOFFT START CH2 DISCHARGE STBY CURRENT Cin … 0.47 µF Co … 0.47 µF 5 SEL ( ) ( Css Rss MONITOR 1 CONTROL BLOCK ) Fig.25 ●Auto Power-saving Function The IC incorporates a built-in auto power-saving function that continuously monitors the output current and switches automatically between a low current consumption regulator and a high-speed operation regulator. This function reduces the regulator's own current consumption to approximately 1/10 or lower of normal levels when the output current falls below approximately 300 A. To operate only the high-speed operation regulator without using the auto power-saving function, fix the SEL pin to high. GND current 　 IGND [μ A] 30 Measurement conditions High-speed mode 20 BH12PB1WHFV VCC = 2.2 V 10 Low-consumption mode VSEL = open, VSTBY = 1.5 V 2 2.5 3  0 0 0.5 1 1.5 Out put current 　 IOUT [ mA] Fig.26 Auto Power-Saving Function (Example) ●Power Dissipation (Pd) 1. Power Dissipation (Pd) Power dissipation calculations include estimates of power dissipation characteristics and internal IC power consumption, and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation. 2. Power Dissipation/Heat Reduction (Pd) HVSOF5 0.6 410 mW 0.4 Calculating the maximum internal IC power consumption (PMAX) PMAX = (VIN - VOUT)  IOUT (MAX.) VIN : Input voltage VOUT : Output voltage IOUT (MAX) : Max. output current Pd[W] *Circuit design should allow a sufficient margin for the temperature range so that PMAX < Pd. 0.2 0 0 25 50 75 100 125 Ta[℃] Fig.27 HVSOF5 Power Dissipation vs Heat Reduction (Example) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.01 - Rev.B BH□□PB1WHFV Series Technical Note ●Input Output capacitors It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or X7R, or better models that offer good temperature and DC bias characteristics and high tolerant voltages. Typical ceramic capacitor characteristics 120 100 100 120 50 V rated voltage Capacitance rate of change (%) Capacitance rate of change (%) 50 V rated voltage Capacitance rate of change (%) 95 100 80 60 40 20 0 -25 0 25 Temp[℃] 50 75 80 60 40 20 0 0 1 2 3 4 90 16 V rated voltage 85 Y5V X7R X5R 10V rated voltage 16 V rated voltage 80 10 V rated voltage 75 70 DC bias Vdc (V) 0 1 DC bias Vdc (V) 2 3 4 Fig.28 Capacitance vs Bias Fig.29 Capacitance vs Bias Fig.30 Capacitance vs Temperature (X5R, X7R, Y5V) (Y5V) (X5R, X7R) ●Output capacitors Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage supply source connected to the VCC. The higher value the output capacitor goes the more stable the whole operation becomes. This leads to high load transient response. Please confirm the whole operation on actual application board. Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers. BH□□PB1WHFV 100 10 ESR (Ω) 1 Stable region COUT = 0.47 µF Ta = +25°C 0.1 0.01 0 50 100 150 Output Current Ｉｏ （mA) Fig.31 Stable Operation Region (Example) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/10 2011.01 - Rev.B BH□□PB1WHFV Series Technical Note ●Notes for use 1. Absolute maximum ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2. Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 3. Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. 4. Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. 5. Ground wiring patterns The power supply and ground lines must be as short and thick as possible to reduce line impedance. Fluctuating voltage on the power ground line may damage the device. 6. Overcurrent protection circuit The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or transitioning of the protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to temperatures. 7. Actions in strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. 8. Back current In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this current by inserting a bypass diode between the VIN and VOUT pins. Back current VIN OUT STBY GND Fig.32 Example Bypass Diode Connection 9. I/O voltage difference Using the IC in automatic switching mode when the I/O voltage differential becomes saturated (VIN - VOUT < 150 mV) may result in a large output noise level. If the noise level becomes problematic, use the IC with the SEL pin in the high state when the voltage differential is saturated. 10. GND Voltage The potential of GND pin must be minimum potential in all operating conditions. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/10 2011.01 - Rev.B BH□□PB1WHFV Series Technical Note 11. Preventing Rush Current By attaching the Rss and Css time constants to the STBY pin, sudden rises in the regulator output voltage can be prevented, dampening the flow of rush current to the output capacitors. The larger the time constant used, the greater the resulting reduction. However, large time constants also result in longer startup times, so the constant should be selected after considering the conditions in which the IC is to be used. 100 Rss = 10 k IO = no load Startup time Trise [sec] 起動時間 10 1.0 m 100  0.01  0.1  1.0  Fig.33 VOUT Startup Time vs CSS Capacitance (Reference) Slow start capacitance Css (F) Frequency f[Hz] 12. Regarding input Pin of the IC (Fig.34) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. Resistor Pin A Pin A P + Transistor (NPN) Pin B C B E B P P+ N C E Pin B N P N P+ N N Parasitic element P+ N P substrate Parasitic element GND P substrate Parasitic element GND GND GND Parasitic element Other adjacent elements Fig.34 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.01 - Rev.B BH□□PB1WHFV Series ●Ordering part number Technical Note B Part No. H 3 0 P B 1 W Shutdown switch W : Includes switch H F V - T R Output voltage 12: 1.2 V 15: 1.5 V 18: 1.8 V 25: 2.5 V 28: 2.8 V 29: 2.9 V 30: 3.0 V 31: 3.1 V 33: 3.3 V Series PB1:Auto powersaving type Package HFV : HVSOF5 Packaging and forming specification TR: Embossed tape and reel HVSOF5 1.6±0.05 1.0±0.05 5 4 (0.8) 0.2MAX Tape Quantity Direction of feed Embossed carrier tape 3000pcs TR The direction is the 1pin of product is at the upper right when you hold 1.2±0.05 (MAX 1.28 include BURR) (0.3) (0.05) 1.6±0.05 4 5 (0.91) (0.41) ( reel on the left hand and you pull out the tape on the right hand 1pin ) 123 321 0.13±0.05 S 0.6MAX +0.03 0.02 –0.02 0.1 0.5 0.22±0.05 S 0.08 M Direction of feed (Unit : mm) Reel ∗ Order quantity needs to be multiple of the minimum quantity. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.01 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. 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