BH18PB1WHFV-TR

CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□PB1WHFV Series No.11020EBT05 ●Description The BH□□PB1WHFV regulator series can respond to changes in output current by switching to a state in which regulator characteristics are ideal. The regulators cut power consumption by lowering their own current consumption to approximately 2 A when the application is operating in the standby state. During normal-current operation it will automatically switch to high-speed operating mode. The IC's soft start function reduce the rush current that flows to the output capacitors during startup. The HVSOF5 package, which features excellent heat dissipation, contributes to space-saving application designs. ●Features 1) Automatic switching between low-consumption and high-speed modes 2) Built-in rush current prevention circuit 3) Low-voltage 1.7 V operation 4) High accuracy output voltage: ± 1% 5) Circuit current during low-consumption operation: 2 A 6) Stable with a ceramic capacitor (0.47 µF) 7) Built-in temperature and overcurrent protection circuits 8) Built-in output discharge during standby operation function 9) Ultra-small HVSOF5 power package ●Applications Battery-driven portable devices, etc. ●Product lineup 150 mA BH□□PB1WHFV Series Product name BH□□PB1WHFV 1.2 1.5 1.8 2.5 2.8 2.9 3.0 3.1 3.3 Package √ √ √ √ √ √ √ √ √ HVSOF5 Model name: BH□□PB1W□ a b Symbol Description Output voltage specification a b □□ Output voltage (V) □□ Output voltage (V) 12 1.2 V (Typ.) 29 2.9 V (Typ.) 15 1.5 V (Typ.) 30 3.0 V (Typ.) 18 1.8 V (Typ.) 31 3.1 V (Typ.) 25 2.5 V (Typ.) 33 3.3 V (Typ.) 28 2.8 V (Typ.) Package HFV: HVSOF5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.01 - Rev.B Technical Note BH□□PB1WHFV Series ●Absolute maximum ratings (Ta = 25°C) Parameter Symbol Ratings Unit Power supply voltage VMAX −0.3 to +6.5 V Pd 410 *1 mW Operating temperature range Topr −40 to +85 °C Storage temperature range Tslg −55 to +125 °C Tjmax 125 °C Power dissipation Junction temperature *1: Reduced by 4.1 mW/°C over 25°C, when mounted on a glass epoxy board (70 mm  70 mm  1.6 mm) ●Recommended operating ranges (not to exceed Pd) Parameter Power supply voltage Output MAX current Symbol Ratings Unit VIN 1.7 to 5.5 V IMAX 0 to 150 mA ●Recommended operating conditions Parameter Symbol Ratings Min. Typ. Max. Unit Input capacitor CIN 0.33 *2 0.47 − µF Output capacitor CO 0.33 *2 0.47 − µF Conditions The use of ceramic capacitors is recommended. The use of ceramic capacitors is recommended. *2: Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic. And also make sure that the capacitor value can not change as time progresses. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.01 - Rev.B Technical Note BH□□PB1WHFV Series ●Electrical characteristics (Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V, STBY = 1.5 V, SEL = 0 V, CIN = 0.47 µF, CO = 0.47 µF) Limits Parameter Symbol Unit Conditions Min. Typ. Max.. 【Regulator】 Output voltage (high-speed mode) VOUT1 Output voltage (low-consumption mode) VOUT2 Circuit current (high-speed mode) Circuit current (low-consumption mode) VOUT1 ×0.99 VOUT1 -0.025 VOUT2 ×0.97 VOUT2 ×0.967 VOUT1 ×1.01 VOUT1 +0.025 VOUT2 ×1.038 VOUT2 ×1.043 - V VOUT≧2.5V,IOUT=0.1mA,SEL=1.5V V VOUT≦1.8V,IOUT=0.1mA,SEL=1.5V V VOUT≧2.5V,IOUT=0.1mA,SEL=0V V VOUT≦1.8V,IOUT=0.1mA,SEL=0V ICC1 - 20 40 μA IOUT=0mA, VIN pin monitor,SEL=1.5V ICC2 - 2 4 μA IOUT=0mA, VIN pin monitor, SEL=0V ISTBY - - 1.0 μA STBY=0V Ripple rejection ratio (high-speed mode) RR1 42 60 - dB VRR=-20dBv, fRR=1kHz, IOUT=10mA, SEL=1.5V Dropout voltage 1 *1 VSAT1 - 100 200 mV VIN=VOUT×0.98,IOUT=50mA Dropout voltage 2 *1 VSAT2 - 210 400 mV VIN=VOUT×0.98,IOUT=100mA Dropout voltage 3 *1 VSAT3 - 315 600 mV VIN=VOUT×0.98,IOUT=150mA VDL1 - 2 20 mV VIN=VOUT+1V to 5.5V,IOUT=10mA VDL2 - 2 20 mV VIN=VOUT+1V to 5.5V,IOUT=100μA VDLO - 10 40 mV IOUT=10mA to 100mA ITH1 0.09 0.3 - mA SEL=0V IOUT=3mA⇒0mA sweep ITH2 - 1.2 2.2 mA SEL=0V IOUT=0mA⇒3mA sweep Limit Current ILMAX 160 300 500 mA Vo=VOUT×0.90 Short current ISHORT 20 50 100 mA Vo=0V ISTB - 2 4 μA STBY=1.5V VSTBH VSTBL 1.5 -0.3 - VIN 0.3 V V Discharge resistance at standby RDCG 1.5 2.2 3.0 kΩ RSEL 0.5 1.0 2.0 MΩ VSELH VSELL 1.5 -0.3 - VIN 0.3 V V Circuit current (STBY) Line regulation 1 (high-speed mode) Line regulation 2 (low-consumption mode) Load regulation 【Mode switch】 Current threshold (low-consumption mode) Current threshold (high-speed mode) 【Over Current Protection 1】 【Stand-by block】 STBY pin sink current STBY control voltage ON OFF STBY=0V 【SEL PIN】 Pull-down resistance of SEL pin SEL control voltage ON OFF * Note: This IC is not designed to be radiation-resistant. *3: Except at VOUT ≤ 1.5 V. ●Electrical characteristics of each output voltage Output Voltage Parameter Min. 70 1.2 V 1.5 V Max. output current 1.8 V ≤ VOUT www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fixed high speed mode Automatic switch mode Typ. Max. 120 − Unit Conditions VCC = 1.7 V 150 − − VCC = 2.0 V 50 100 − VCC = 1.8 V 150 − − 75 143 − VCC = VOUT + 0.3 V 150 − − VCC = VOUT + 0.6 V 3/10 mA VCC = 2.2 V 2011.01 - Rev.B Technical Note BH□□PB1WHFV Series 4.0 4.0 3.5 3.5 3.5 3.0 2.5 2.0 1.5 1.0 3.0 2.5 2.0 1.5 1.0 IO = 10 mA 0.5 3.0 2.5 2.0 1.5 1.0 IO = 10 mA 0.5 0.0 0.5 1 2 3 4 Input Voltage VIN [V] 5 0 Fig.1 Output Voltage vs Input Voltage (BH12PB1WHFV) 1 2 3 4 Input Voltage VIN [V] 0 5 Fig.2 Output Voltage vs Input Voltage (BH30PB1WHFV) Output Voltage VOUT [V] 40 30 SEL = 1.5 V 20 10 IO = no load 3.0 50 SEL = 0 V 2.5 2.0 1 2 3 4 Input Voltage VIN [ V] IO = no load 200 1.5 SEL = 1.5 V 1.0 SEL = 1.5 V 100 SEL = 0 V 0.0 0 5 300 0.5 0 2 3 4 Input Voltage VIN [ V] 400 I nput Output Voltage difference VSAT [mV] IO = no load 60 1 Fig.3 Output Voltage vs Input Voltage (BH33PB1WHFV) 3.5 70 IO = 10 mA 0.0 0.0 0 GND Current IGND [μA] Out put Volt age VOUT [V] 4.0 Output Voltage VOUT [V] Output Voltage VOUT [V] ●Typical characteristics 0 0 5 SEL = 0 V 100 200 300 Output Current I OUT [mA] 400 (BH33PB1WHFV) (BH30PB1WHFV) (BH12PB1WHFV) 0 50 100 Output Current IOUT [mA] 150 Fig.6 GND Current vs－Input Voltage (BH33PB1WHFV) (BH30PB1WHFV) 3.5 3.0 3.0 3.0 O ut put Volt age VOUT [V] 2.5 2.0 1.5 1.0 0.5 2.5 2.0 1.5 1.0 2.5 2.0 1.5 1.0 0.5 0.0 0.5 0.0 0 100 200 300 Output Current IOUT [mA] 400 0.0 0 100 200 300 Output Current I OUT [mA] 400 Fig.8 Output Voltage vs Output Current (BH30PB1WHFV) (BH30PB1WHFV) (BH12PB1WHFV) 400 300 2.5 2.0 1.0 0.0 100 0 0 0 100 200 300 O utput Current IO UT [ mA] 400 Fig.10 Dropout voltage vs Output Current (BH18PB1WHFV) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.9 Output Voltage vs Output Current (BH33PB1WHFV) 200 100 0.5 400 300 200 1.5 100 200 300 Output Current I OUT [mA] I nput Output Voltage difference VSAT [mV] 3.0 0 400 Input Output Voltage difference VOUT [mV] 3.5 Out put Volt age VO UT [V] Output Voltage VOUT [V] 3.5 Output Voltage VOUT [V] 3.5 0 50 100 Output Current IO UT [ mA] 150 0 50 100 Output Current IOUT [mA] 150 Fig.11 Dropout voltage vs Output Current Fig.12 Dropout voltage vs Output Current (BH33PB1WHFV) (BH30PB1WHFV) 4/10 2011.01 - Rev.B Technical Note BH□□PB1WHFV Series 4 3.1 3.0 2.9 6 Standby Pin Sink Current ISTBY[µA] Out put Volt age VOUT[V] O ut put Volt age VOUT[V] 3.2 3 2 1 -50 -25 0 25 50 Temp[℃ ] 75 0.0 100 80 70 70 Ripple Rejection R.R.[dB] Ripple Rejection R.R.[dB] 80 50 40 30 Co = 0.47 µF IO = 10 mA 20 0.5 1.0 VSTBY[V] 1.5 3 2 1 0.0 2. 0 Fig.14 Standby Pin Threshold (BH30PB1WHFV) Fig.13 Output Voltage vs Temperature (BH30PB1WHFV) 60 4 0 0 2.8 5 1.0 2.0 3.0 VSTBY[V] 4.0 5.0 Fig.15 Standby Pin Sink Current (BH30PB1WHFV) SEL 1 V / div SEL = 0 V  1.5 60 50 40 VOUT 30 Co = 0.47 µF IO = 10 mA 20 50 mV / div IO = no load 10 ms / div 10 10 100 1k 10 k 100 Frequency f[Hz] 1M Fig.16 Ripple Rejection (BH12PB1WHFV) IOUT = 0 mA  10 mA 100 1k 10 k 100 Frequency f[Hz] 1M Fig.17 Ripple Rejection (BH30PB1WHFV) Fig.18 Output Voltage Waveform During SEL Switching (BH30PB1WHFV) IOUT = 1 mA  30 mA 50 mV / div IOUT = 1 mA  100 50 mV / div 100 mV / div VOUT VOUT VOUT SEL = 0 V 100 s / div (power-saving operation) Fig.19 Load Response (Co = 1.0 µF) (BH30PB1WHFV) 200 s / div SEL = 1.5 V 200 s / div Fig.20 Load Response (Co=1.0 µF) (BH30PB1WHFV) Fig.21 Load Response (Co=1.0 µF) (BH30PB1WHFV) 100 m Rss = 10 k, IO = no load STBY STBY 1 V / div Co = 0.47 µF 1 V / div VOUT Co = 2.2 µF Co = 1 µF Co = 0.47 µF VOUT Co = 10 µF Startup time Trise [sec] 1 V / div 10 m 1.0µ 1 V / div 200 s / div 10 ms / div 100 µ 0.01µ 0.1 µ 1.0µ Slow start capacitance Css (F) Fig.22 Output Voltage Rise Time (BH30PB1WHFV) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.23 Output Voltage Fall Time (BH30PB1WHFV) 5/10 Fig.24 Soft Start Rise Time (BH30PB1WHFV) 2011.01 - Rev.B Technical Note BH□□PB1WHFV Series ●Block diagram, recommended circuit diagram, and pin assignment table BH□□PB1WHFV VIN PIN No. Symbol Function 1 STBY Output voltage on/off control(High: ON, Low: OFF) 2 GND Ground 3 VIN 4 VOUT 5 SEL Power supply input Voltage output Mode switching (High: Fix in high-speed mode Low: Automatic low-consumption mode switching) 3 CH1 + Cin THERMAL & OVER CURRENT PROTECTION VOLTAGE REFERENCE GND VOUT 4 2 + Co CH2 DISCHARGE SOFFT START Cin … 0.47 µF Co … 0.47 µF CURRENT STBY MONITOR Rss ( ) ( Css 1 ) CONTROL 5 BLOCK SEL Fig.25 The IC incorporates a built-in auto power-saving function that continuously monitors the output current and switches automatically between a low current consumption regulator and a high-speed operation regulator. This function reduces the regulator's own current consumption to approximately 1/10 or lower of normal levels when the output current falls below approximately 300 A. To operate only the high-speed operation regulator without using the auto power-saving function, fix the SEL pin to high.  GND current 　 IGND [μ A] ●Auto Power-saving Function 30 Measurement conditions High-speed mode BH12PB1WHFV 20 VCC = 2.2 V 10 VSEL = open, VSTBY = 1.5 V Low-consumption mode 0 0 0.5 1 1.5 2 2.5 3 Out put current 　 IOUT [ mA] Fig.26 Auto Power-Saving Function (Example) Calculating the maximum internal IC power consumption (PMAX) 2. Power Dissipation/Heat Reduction (Pd) HVSOF5 0.6 *Circuit design should allow a sufficient margin for the temperature range so that PMAX < Pd. 410 mW 0.4 Pd[W] ●Power Dissipation (Pd) 1. Power Dissipation (Pd) Power dissipation calculations include estimates of power dissipation characteristics and internal IC power consumption, and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation. 0.2 0 0 25 50 75 100 125 Ta[℃] PMAX = (VIN - VOUT)  IOUT (MAX.) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. VIN : Input voltage VOUT : Output voltage IOUT (MAX) : Max. output current 6/10 Fig.27 HVSOF5 Power Dissipation vs Heat Reduction (Example) 2011.01 - Rev.B Technical Note BH□□PB1WHFV Series ●Input Output capacitors It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or X7R, or better models that offer good temperature and DC bias characteristics and high tolerant voltages. Typical ceramic capacitor characteristics 120 100 120 50 V rated voltage 80 60 10V rated voltage 40 16 V rated voltage 20 0 100 95 Capacitance rate of change (%) Capacitance rate of change (%) 100 Capacitance rate of change (%) 50 V rated voltage 90 16 V rated voltage 85 10 V rated voltage 80 75 70 0 1 2 3 4 0 DC bias Vdc (V) 1 2 3 80 40 20 0 -25 4 X7R X5R Y5V 60 DC bias Vdc (V) 0 25 Temp[℃] 50 75 Fig.28 Capacitance vs Bias Fig.29 Capacitance vs Bias Fig.30 Capacitance vs Temperature (X5R, X7R, Y5V) (Y5V) (X5R, X7R) ●Output capacitors Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage supply source connected to the VCC. The higher value the output capacitor goes the more stable the whole operation becomes. This leads to high load transient response. Please confirm the whole operation on actual application board. Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers. BH□□PB1WHFV 100 ESR (Ω) 10 Stable region 1 COUT = 0.47 µF Ta = +25°C 0.1 0.01 0 50 100 150 Output Current Ｉｏ （mA) Fig.31 Stable Operation Region (Example) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/10 2011.01 - Rev.B Technical Note BH□□PB1WHFV Series ●Notes for use 1. Absolute maximum ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2. Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. 3. Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. 4. Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. 5. Ground wiring patterns The power supply and ground lines must be as short and thick as possible to reduce line impedance. Fluctuating voltage on the power ground line may damage the device. 6. Overcurrent protection circuit The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or transitioning of the protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to temperatures. 7. Actions in strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. 8. Back current In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this current by inserting a bypass diode between the VIN and VOUT pins. Back current VIN STBY OUT GND Fig.32 Example Bypass Diode Connection 9. I/O voltage difference Using the IC in automatic switching mode when the I/O voltage differential becomes saturated (VIN - VOUT < 150 mV) may result in a large output noise level. If the noise level becomes problematic, use the IC with the SEL pin in the high state when the voltage differential is saturated. 10. GND Voltage The potential of GND pin must be minimum potential in all operating conditions. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/10 2011.01 - Rev.B Technical Note BH□□PB1WHFV Series 11. Preventing Rush Current By attaching the Rss and Css time constants to the STBY pin, sudden rises in the regulator output voltage can be prevented, dampening the flow of rush current to the output capacitors. The larger the time constant used, the greater the resulting reduction. However, large time constants also result in longer startup times, so the constant should be selected after considering the conditions in which the IC is to be used. 100 Rss = 10 k Startup time Trise [sec] 起動時間 IO = no load 10 1.0 m 100  0.01  0.1  1.0  Slow start capacitance Frequency f[Hz] Css (F) Fig.33 VOUT Startup Time vs CSS Capacitance (Reference) 12. Regarding input Pin of the IC (Fig.34) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. Resistor Transistor (NPN) Pin A Pin B C Pin B B E Pin A N N N P + P+ P N P+ Parasitic element P substrate Parasitic element GND B N P+ P N C E Parasitic element P substrate Parasitic element GND GND GND Other adjacent elements Fig.34 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.01 - Rev.B Technical Note BH□□PB1WHFV Series ●Ordering part number B H 3 Part No. 0 P Output voltage 12: 1.2 V 15: 1.5 V 18: 1.8 V 25: 2.5 V 28: 2.8 V 29: 2.9 V 30: 3.0 V 31: 3.1 V 33: 3.3 V B 1 W Series PB1:Auto powersaving type H Shutdown switch W : Includes switch F V - Package HFV : HVSOF5 T R Packaging and forming specification TR: Embossed tape and reel HVSOF5 Embossed carrier tape (0.3) Quantity 3000pcs 4 (0.91) 4 5 (0.41) 5 0.2MAX Tape 1.0±0.05 (0.05) (0.8) Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand ) 3 2 1 1 2 3 1pin 0.13±0.05 S +0.03 0.02 –0.02 1.6±0.05 0.6MAX 1.2±0.05 (MAX 1.28 include BURR) 1.6±0.05 0.1 S 0.5 0.22±0.05 0.08 Direction of feed M (Unit : mm) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Reel 10/10 ∗ Order quantity needs to be multiple of the minimum quantity. 2011.01 - Rev.B Datasheet Notice Precaution on using ROHM Products 1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment, OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you (Note 1) , transport intend to use our Products in devices requiring extremely high reliability (such as medical equipment equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. 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The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual ambient temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice - GE © 2014 ROHM Co., Ltd. All rights reserved. Rev.002 Datasheet Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. 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The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. Notice – WE © 2014 ROHM Co., Ltd. All rights reserved. Rev.001