BH25FB1WG

CMOS LDO Regulator Series for Portable Equipments Standard CMOS LDO Regulators BH BH FB1WG series, BH LB1WG series, BH FB1WHFV series, LB1WHFV series Large Current 300mA CMOS LDO Regulators BH MA3WHFV Series No.10020ECT02 Description The BH FB1W, BH LB1W and BH MA3W series are low dropout CMOS regulators with 150 mA and 300 mA output that have ±1% high accuracy output voltage. The BH FB1W series combines 40µA low current consumption and a 70 dB high ripple rejection ratio by utilizing output level CMOS technology. The components can be easily mounted into the small standard SSOP5 and the ultra-small HVSOF5/HVSOF6 packages. Features 1) High accuracy output voltage: ±1% 2) High ripple rejection ratio: 70 dB (BH FB1WHFV/WG, BH LB1WHFV/WG) 3) Low dropout voltage: 60 mV (when current is 100 mA) (BH MA3WHFV) 4) Stable with ceramic output capacitors 5) Low Bias current : 40µ A (IO = 50 mA) (BH FB1WHFV/WG) 6) Output voltage ON/OFF control 7) Built-in over-current protection and thermal shutdown circuits 8) Ultra-small power package: HVSOF5 (BH FB1WHFV, BH LB1WHFV) 9) Ultra-small power package: HVSOF6 (BH MA3WHFV) Applications Battery-driven portable devices and etc. Line up 150mA BH FB1W and BH LB1W Series Part Number BH BH BH BH FB1WG FB1WHFV LB1WG LB1WHFV MA3WHFV series 1.5 1.8 2.5 2.8 2.9 3.0 3.1 3.3 Package HVSOF6 FB1W a Symbol b , BH a LB1W b Symbol Part Number: B H a M A3 W b 1.5 1.8 1.85 2.5 2.8 2.9 3.0 3.1 3.3 Package SSOP5 HVSOF5 SSOP5 HVSOF5 300mA BH Part Number BH MA3WHFV Part Number: B H a b Details Output Voltage Designation Output Voltage (V) Output Voltage (V) 15 1.5V (Typ.) 2.9V (Typ.) 29 18 1.8V (Typ.) 3.0V (Typ.) 30 1J 1.85V (Typ.) 3.1V (Typ.) 31 25 2.5V (Typ.) 3.3V (Typ.) 33 28 2.8V (Typ.) Package: G : SSOP5 HFV : HVSOF5 a b Details Output Voltage Designation Output Voltage (V) Output Voltage (V) 15 1.5V (Typ.) 2.9V (Typ.) 29 18 1.8V (Typ.) 3.0V (Typ.) 30 25 2.5V (Typ.) 3.1V (Typ.) 31 28 2.8V (Typ.) 3.3V (Typ.) 33 Package: HFV : HVSOF6 www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 1/8 2010.07 - Rev. C BH BH FB1WG series, BH LB1WG series, BH FB1WHFV series, LB1WHFV series, BH MA3WHFV series Technical Note Absolute maximum ratings (Ta = 25 C) Parameter Applied supply voltage Power dissipation Operating temperature range Storage temperature range Symbol VMAX Pd Topr Tstg Limits -0.3 ~ +6.5 680 (HVSOF6) 410 (HVSOF5) 540 (SSOP5) -40 ~ +85 -55 ~ +125 Unit V mW C C Recommended operating range Parameter Power supply voltage BH Output current BH BH MA3W FB1W LB1W IOUT Symbol VIN Min. 2.5 Typ. Max. 5.5 300 150 150 Unit V mA mA mA Recommended operating conditions Parameter Input capacitor Output capacitor Noise decrease capacitor Symbol CIN Co Cn Min. 0.1 1.0 Typ. 0.01 Max. 0.22 Unit μF μF μF Conditions Ceramic capacitor recommended Ceramic capacitor recommended Ceramic capacitor recommended BH FB1WHFV/WG , BH 1 LB1WHFV/WG Typ. VOUT 40 70 50 50 250 2 10 15 250 300 50 40 1100 Max. VOUT 1.01 70 1.0 450 20 30 90 420 3 450 5 2200 Vcc 0.3 Unit V μA μA dB mV mV mV mV mV mA mA mA kΩ V V 5 BH25,28,29,30,31,33WHFV/G Parameter Output voltage Circuit current Circuit current(STBY) Ripple rejection ratio Load response 1 Load response 2 Dropout voltage Line regulation Load regulation (1) Load regulation (2) Over current protection limit current Short current STBY pull-down resistor ON STBY control voltage OFF 3 Symbol Min. VOUT VOUT 0.99 I GND I STBY RR LTV1 LTV2 VSAT VDL1 VDL01 VDL02 150 3 ILMAX 150 5 I SHORT RSTB VSTBH VSTBL 550 1.5 -0.3 Conditions IOUT=1mA IOUT=50mA STBY=0V VRR=-20dBv, fRR=1kHz, IOUT=10mA IOUT=1mA to 30mA IOUT=30mA to 1mA VIN=0.98 VOUT, IOUT=100mA 4 VIN=VOUT+0.5V to 5.5V IOUT=1mA to 100mA IOUT=1mA to 150mA Vo=VOUT 0.98 Vo=0V 3 5 3 5 BH MA3WHFV Parameter Symbol VOUT I GND I STBY RR VSAT1 VDL1 VDL01 VDL02 ILMAX I SHORT Min. Typ. VOUT 65 60 60 2 6 18 ±100 600 100 95 1.0 90 20 30 90 Max. Unit V μA μA dB mV mV mV mV mA mA IOUT=1mA IOUT=1mA STBY=0V VRR=-20dBv, fRR=1kHz, IOUT=10mA VIN=0.98 X V OUT, IOUT=100mA VIN=VOUT+0.5V to 5.5V IOUT=1mA to 100mA IOUT=1mA to 300mA Vo=VOUT X 0.85 Vo=0V Conditions ppm/ C IOUT=1mA, Ta=-40 to +85 C www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 2/8 2010.07 - Rev. C BH □□ FB1WG series, BH □□FB1WHFV series, BH □□ LB1WG series, BH □□LB1WHFV series, BH □□ MA3WHFV series Technical Note Typical characteristics • Output voltage-input voltage 2 BH15LB1WHFV ~ Condition ~ VIN=0 to 5.5V Cin=0.1μF 4 BH28FB1WHFV ~ Condition ~ VIN=0 to 5.5V Cin=0.1μF 4 BH30MA3WHFV ~ Condition ~ VIN=0 to 5.5V Cin=1.0μF 1.5 Output Voltage VOUT[V] Co=1.0μF 3 Output Voltage VOUT[V] Co=1.0μF ROUT=2.8kΩ Ta=25°C 3 Output Voltage VOUT[V] Co=1.0μF Cn=none ROUT=3.0kΩ Ta=25°C ROUT=1.5kΩ Ta=25°C 1 2 2 0.5 1 1 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage VIN[V] 4.5 5 5.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 Input Voltage VIN[V] 4.5 5 5.5 0 0 0.5 1 1.5 2 2.5 3 3.5 Input Voltage VIN[V] 4 4.5 5 5.5 Fig.1 • GND current -input voltage 60 BH15LB1WHFV ~ Condition ~ Fig.2 Fig.3 60 BH28FB1WHFV 100 BH30MA3WHFV ~ Condition ~ VIN=0 t o 5.5V ~ Condition ~ 50 VIN=0 t o 5.5V Cin=0.1μF Co=1.0μF 50 VIN=0 t o 5.5V Cin=0.1μF Co=1.0μF 80 GND Current IGND[μA] Cin=1.0μF Co=1.0μF Cn=none ROUT=3.0kΩ T a=25°C GND Current IGND[μA] GND Current IGND[μA] 40 ROUT=1.5kΩ T a=25°C 40 ROUT=2.8kΩ T a=25°C 60 30 30 40 20 20 10 10 20 0 0  0.5 1 1.5 2 2.5 3 3.5   4.5 5 5.5 4  Input Voltage VIN[V] 0 0 0.5 1 1.5 2 2.5 3 3.5 Input Voltage VIN[V] 4 4.5 5 5.5 0 0 0.5 1 1.5 2 2.5 3 3.5 Input Voltage VIN[V] 4 4.5 5 5.5 Fig.4 • Output voltage-output current 2 BH15LB1WHFV ~ Condition ~ VIN=3.5V Fig.5 Fig.6 3.5 3 2.5 2 1.5 1 0.5 0 BH28FB1WHFV ~ Condition ~ VIN=3.8V VOUT=2.83V to 0V Cin=0.1μF Ta=25°C 3.5 3 2.5 Output Voltage[V] 2 1.5 1 0.5 0 BH30MA3WHFV ~ Condition ~ VIN=4.0V VOUT=3.03V to 0V Cin=1.0μF Co=1.0μF Cn=none Ta=25°C 1.5 Output Voltage VOUT[V] VOUT=1.53V to 0V Co=1.0μF Ta=25°C Output Voltage VOUT[V] Cin=0.1μF Co=1.0μF 1 0.5 0 0 100 200 300 Output Current IOUT[mA] 400 0 50 100 150 200 Output Current IOUT[mA] 250 300 0 100 200 300 400 500 Output Current IOUT[mA] 600 700 Fig.7 • Dropout voltage-output current 500 BH28FB1WHFV ~ Condition ~ VIN=2.74V Fig.8 Fig.9 300 BH30MA3WHFV ~ Condition ~ VIN=2.940V IOUT=0 to 300mA Cin=1.0μF Co=1.0μF Cn=none Ta=25°C 400 Dropout Voltage VSAT[mV] IOUT=0 to 150mA Co=1.0μF 250 Dropout Voltage VSAT[mV] Cin=0.1μF Ta=25°C 200 300 150 200 100 100 50 0 0 0 50 100 Output Current IOUT[mA] 150 0 50 100 150 200 Output Current IOUT[mA] 250 300 Fig.10 Fig.11 www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 3/8 2010.07 - Rev. C BH □□ FB1WG series, BH □□FB1WHFV series, BH □□ LB1WG series, BH □□LB1WHFV series, Typical Characteristics • Output voltage-temperature BH □□ MA3WHFV series Technical Note Ω Ω Ω ° ° ° ° ° ° • Ripple reflection-frequency Ω Ω Ω ° ° ° • Load response characteristics (CO = 1.0 μF) ° ° ° • Output voltage startup time ° ° www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 4/8 2010.07 - Rev. C BH □□ FB1WG series, BH □□FB1WHFV series, BH □□ LB1WG series, BH □□LB1WHFV series, Block diagrams BH □□ MA3WHFV series Technical Note Power supply input Ground Output voltage ON/OFF control (High: ON, Low: OFF) NO CONNECT Voltage output Output voltage ON/OFF control (High: ON, Low: OFF) Ground Power supply input Voltage output NO CONNECT Terminal No. Terminal Name Function Power supply input Voltage output Voltage output Noise reducing capacitor ground terminal Ground Output voltage ON/OFF control (High: ON, Low: OFF) Power dissipation Pd 1. Power dissipation Power dissipation calculation include estimates of power dissipation characteristics and internal IC power consumption and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation. Calculating the maximum internal IC power consumption (PMAX) 2. Power dissipation characteristics (Pd) Board: 70 mm X 70 mm X 1.6 mm Material: Glass epoxy PCB Input voltage Output voltage Output current Board: 70 mm X 70 mm X 1.6 mm Material: Glass epoxy PCB Board: 70 mm X 70 mm X 1.6 mm Material: Glass epoxy PCB ° ° ° Fig. 26: HVSOF6 Power Dissipation/ Power Dissipation Reduction (Example) Fig. 27: HVSOF5 Power Dissipation/ Power Dissipation Reduction (Example) Fig. 28: SSOP5 Power Dissipation/ Power Dissipation Reduction (Example) www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 5/8 2010.07 - Rev. C BH □□ FB1WG series, BH □□FB1WHFV series, BH □□ LB1WG series, BH □□LB1WHFV series, BH □□ MA3WHFV series Technical Note Input capacitor It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as possible. These capacitors will be used when the power supply impedance increases or when long wiring routes are used, so they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or X7R or better models that offer good temperature and DC bias characteristics and high torelant voltages. Examples of ceramic capacitor characteristics Rate of change in electrostatic capacitance (%) Rate of change in electrostatic capacitance (%) 120 100 50V torelance 80 60 10V torelance 16V torelance 40 20 0 0 50V torelance 95 90 16V torelance 85 10V torelance 80 75 70 0 Rate of change in electrostatic capacitance (%) 100 120 100 80 60 40 20 0 -25 Y5V X7R X5R 1 2 3 4 DC bias Vdc (V) Fig. 29: Capacitance -bias characteristics (Y5V) 1 2 3 4 DC bias Vdc (V) Fig. 30: Capacitance -bias characteristics (X5R, X7R) 0 25 50 75 Temperature (°C) Fig. 31: Capacitance–temperature characteristics (X5R, X7R, Y5V) Output capacitor To prevent oscillation at the output, it is recommended that the IC be operated at the stable region show in below Fig. It operates at the capacitance of more than 1.0μF. As capacitance is larger, stability becomes more stable and characteristic of output load fluctuation is also improved. BH 100 LB1WHFV/WG Cout=1.0μF Ta=+25°C BH 100 FB1WHFV/WG Cout=2.2μF Ta=+25°C BH 100 MA3WHFV Cout=1.0μF Cin=1.0μF Ta=+25°C 10 ESR(Ω) ESR(Ω) 1 10 ESR(Ω) 1 10 1 Stable region 0.1 0.01 50 100 150 Output current IOUT(mA) Fig. 33 BH FB1WHFV/WG Stable operating region characteristics (Example) 0 0 100 200 Output current IOUT(mA) 300 Stable region Stable region 0.1 0.01 0.1 0.01 0 50 100 Output current IOUT(mA) 150 Fig. 32 BH LB1WHFV/WG Stable operating region characteristics (Example) Fig. 34 BH MA3WHFV Stable operating region characteristics (Example) Other precautions • Over current protection circuit The IC incorporates a built-in over current protection circuit that operates according to the output current capacity. This circuit serves to protect the IC from damage when the load is shorted. The protection circuits use fold-back type current limiting and are designed to limit current flow by not latching up in the event of a large and instantaneous current flow originating from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or transitioning of the protection circuits. • Thermal shutdown circuit This system has a built-in thermal shutdown circuit for the purpose of protecting the IC from thermal damage. As shown above, this must be used within the range of power dissipation, but if the power dissipation happens to be continuously exceeded, the chip temperature increases, causing the thermal shutdown circuit to operate. When the thermal shutdown circuit operates, the operation of the circuit is suspended. The circuit resumes operation immediately after the chip temperature decreases, so the output repeats the ON and OFF states. There are cases in which the IC is destroyed due to thermal runaway when it is left in the overloaded state. Be sure to avoid leaving the IC in the overloaded state. • Actions in strong magnetic fields Use caution when using the IC in the presence of a strong magnetic field as such environments may occasionally cause the chip to malfunction. • Back current In applications where the IC may be exposed to back current flow, it is recommended to create a route t dissipate this current by inserting a bypass diode between the V IN and V OUT pins. • GND potential Ensure a minimum GND pin potential in all operating conditions. In addition, ensure that no pins other than the GND pin carry a voltage less than or equal to the GND pin, including during actual transient phenomena. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 6/8 2010.07 - Rev. C BH □□ FB1WG series, BH □□FB1WHFV series, BH □□ LB1WG series, BH □□LB1WHFV series, BH □□ MA3WHFV series Technical Note Noise terminal (BH MA3WHFV) The terminal is directly connected to inward normal voltage source. Because this has low current ability, load exceeding 100nA will cause some instability at the output. For such reasons, we urge you to use ceramic capacitors which have less leak current. When choosing noise the current reduction capacitor, there is a trade-off between boot-up time and stability. A bigger capacitor value will result in lesser oscillation but longer boot-up time for VOU T. 100 VOUT startup time t (msec) 10 1 BH30MA3WHFV ~ Condition ~ VIN=4.0V Cin=1.0μF Co=1.0μF ROUT=3.0kΩ Ta=25°C 0.1 0.01 100P 1000P 0.01μ 0.1μ noise-filtering capacitor capacitance Cn (F) Fig. 35: V OUT startup time vs. noise-filtering capacitor capacitance characteristics (Example) Regarding input pin of the IC This monolithi c IC contains P+ isolation and P substrat e layer s between adjacent elements in order to keep them isolated. P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety of parasitic elements. For example, when a resistor and transistor are connected to pins as shown in Fig.37 The P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or GND > (Pin B) for the transistor (NPN). Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described above combines with the N layer of other adjacent elements to operate as a parasitic NPN transistor. The formation of parasitic elements as a result of the relationships of the potentials of different pins is an inevitable result of the IC's architecture. The operation of parasitic elements can cause interference with circuit operation as well as IC malfunction and damage. For these reasons, it is necessary to use caution so that the IC is not used in a way that will trigger the operation of parasitic elements, such as by the application of voltage lower than the GND (P substrate) voltage to input pins. Transistor (NPN) (Terminal A) Resistor back current VCC OUT CTL GND Fig. 36: Example of bypass diode connection (Terminal B) C B E B (Terminal B) O E GND P+ N N P P-board Parasitic element GND N P P+ N P+ N N P N P P+ Other adjacent elements GND Parasitic elements (Terminal A) Parasitic element Parasitic elements GND GND Fig.37 Part number selection BH ROHM part number 30 Output voltage FB1 Current capacity MA3 : 300mA FB1 : 150mA LB1 : 150m A W Shutdown switch W : With switch HFV Package HFV : HVSOF6 HVSOF5 G : SSOP5 - TR Package specification TR : Embossed taping www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 7/8 2010.07 - Rev. C BH □□ FB1WG series, BH □□FB1WHFV series, BH □□ LB1WG series, BH □□LB1WHFV series, BH □□ MA3WHFV series Technical Note (Unit:mm) (1.8MAX.) (Unit:mm) 2.9±0.2 5 4 (Unit:mm) 1.6±0.05 (0.05) 0.8 0.3 (0.91) 54 4 5 0.2Max. (1.5) (1.2) (1.4) (0.15) (0.45) +6° 4° - 4° 0.2Min. 1.6±0.1 654 2.8±0.2 1.6 -0.1 +0.2 (0.41) 1 2 3 1.6±0.05 123 321 0.13±0.05 3.0±0.1 1.0±0.05 123 (1.28MAX.) 1.2±0.05 1.25Max. (2.8MAX.) 0.75Max. 2.6±0.1 0.13 +0.05 -0.03 0.145±0.05 1.1±0.05 0.05±0.05 0.42 +0.05 -0.04 0.95 0.1 S 0.1 S 0.22±0.05 0.6Max. 0.22±0.05 0.5 0.5 SSOP5 HVSOF5 HVSOF6 (Package Specification) SSOP5, HVSOF5 Package Form Package Quantity Package Orientation Embossed taping 3000pcs TR (When the reel is held with the left hand and the tape is drawn out with the right hand, the No. 1 pin of the product faces the upper right direction.) (Package Specification) HVSOF6 Package Form Package Quantity Package Orientation Embossed taping 3000pcs TR (When the reel is held with the left hand and the tape is drawn out with the right hand, the No. 1 pin of the product faces the upper right direction.) No. 1 pin Reel Pulling side * Please make orders in multiples of the package quantity. * Please make orders in multiples of the package quantity. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 8/8 2010.07 - Rev. C Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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