BH25NB1WHFWHFV-TR

CMOS LDO Regulators for Portable Equipments 1ch 150mA CMOS LDO Regulators BH□□NB1WHFV series No.11020EBT04 ●Description The BH□□NB1WHFV series is a line of 150 mA output, high-performance CMOS regulators that deliver a high ripple rejection ratio of 80 dB (Typ., 1 kHz). They are ideal for use in high-performance, analog applications and offer improved line regulation, load regulation, and noise characteristics. Using the ultra-small HVSOF5 package, which features a built-in heat sink, contributes to space-saving application designs. ●Features 1) High accuracy output voltage: ± 1% 2) High ripple rejection ratio: 80 dB (Typ., 1 kHz) 3) Stable with ceramic capacitors 4) Low bias current: 60 µA 5) Output voltage on/off control 6) Built-in overcurrent and thermal shutdown circuits 7) Ultra-small HVSOF5 power package ●Applications Battery-driven portable devices, etc. ●Product line 150 mA BH□□NB1WHFV Series Product name BH□□NB1WHFV 2.5 2.8 2.85 2.9 3.0 3.1 3.3 Package HVSOF5 √ √ √ √ √ √ √ Model name: BH□□NB1W□ a b Symbol Description Output voltage specification □□ 25 a 28 2J 29 b 2.8 V (Typ.) 2.85 V (Typ.) 2.9 V (Typ.) Package HFV: HVSOF5 31 33 3.1 V (Typ.) 3.3 V (Typ.) Output voltage (V) 2.5 V (Typ.) □□ 30 Output voltage (V) 3.0 V (Typ.) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/8 2011.01 - Rev.B BH□□NB1WHFV series ●Absolute maximum ratings Parameter Applied power supply voltage Power dissipation Operating temperature range Storage temperature range Symbol VMAX Pd Topr Tstg Ratings −0.3 to +6.0 410 *1 −40 to +85 −55 to +125 Unit V mW °C °C Technical Note *1: Reduce by 4.1 mW/C over 25C, when mounted on a glass epoxy PCB (70 mm  70 mm  1.6 mm). ●Recommended operating ranges (not to exceed Pd) Parameter Power supply voltage Output current ●Recommended operating conditions Parameter Input capacitor Output capacitor *2 Symbol VIN IOUT Ratings 2.5 to 5.5 0 to 150 Unit V mA Symbol CIN CO Ratings Min. 0.1 *2 2.2 *2 Typ. — — Max. — — Unit µF µF Conditions The use of ceramic capacitors is recommended. The use of ceramic capacitors is recommended. Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic. And also make sure that the capacitor value cannot change as time progresses. ●Electrical characteristics (Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V, STBY = 1.5 V, CIN = 0.1 µF, CO = 2.2 µF) Limits Parameter Symbol Unit Conditions Min. Typ. Max. Output voltage Circuit current Circuit current (STBY) Ripple rejection ratio Load response 1 Load response 2 Dropout voltage 1 Dropout voltage 2 Line regulation Load regulation 1 Load regulation 2 Overcurrent protection limit current Short current STBY pull-down resistance STBY control voltage ON OFF VOUT IGND ISTBY RR LTV1 LTV2 VSAT1 VSAT2 VDL1 VDLO1 VDLO2 ILMAX ISHORT RSTB VSTBH VSTBL VOUT0.99 — — — — — — — — — — — — 275 1.5 −0.3 VOUT 60 — 80 25 25 80 250 1 6 9 250 50 550 — — VOUT1.01 100 1.0 — — — 150 450 20 30 90 — — 1100 VIN 0.3 V µA µA dB mV mV mV mV mV mV mV mA mA kΩ V V IOUT = 1 mA IOUT = 50 mA STBY = 0 V VRR = −20 dBv, fRR = 1 kz, IOUT = 10 mA IOUT = 1 mA to 30 mA IOUT = 30 mA to 1 mA VIN = 0.98  VOUT, IOUT = 30 mA VIN = 0.98  VOUT, IOUT = 100 mA VIN = VOUT + 0.5 V to 5.5 V, IOUT = 50 mA IOUT = 1 mA to 100 mA IOUT = 1 mA to 150 mA VO = VOUT  0.98 VO = 0 V * This IC is not designed to be radiation-resistant. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/8 2011.01 - Rev.B BH□□NB1WHFV series ●Reference data 4.0 3.5 Output Voltage VOUT[V] Technical Note 4.0 3.5 4.0 3.5 O ut put Volt age VO UT[V] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 Input Volt age VIN[V] 5 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 Input Voltage VIN[V] 5 Out put Voltage VOUT[V] 3.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 1 2 3 4 Input Voltage VIN[V] 5 Fig.1 Output Voltage vs Input Voltage (BH25NB1WHFV) 80 70 Fig.2 Output Voltage vs Input Voltage (BH30NB1WHFV) 80 70 GND Current IGND[mA] 60 50 40 30 20 10 0 Fig.3 Output Voltage vs Input Voltage (BH33NB1WHFV) 80 70 GND Current IGND[mA] 60 50 40 30 20 10 0 GND Current IGND[mA] 60 50 40 30 20 10 0 0 1 2 3 4 Input Voltage VIN[V] 5 0 1 2 3 4 Input Voltage VI N[V] 5 0 1 2 3 4 Input Voltage VIN[V] 5 Fig.4 GND Current vs Input Voltage (BH25NB1WHFV) 3.5 3.0 Output Voltage VOUT[V] Fig.5 GND Current vs Input Voltage (BH30NB1WHFV) 3.5 3.0 Output Voltage VOUT[V] Fig.6 GND Current vs Input Voltage (BH33NB1WHFV) 3.5 3.0 Output Voltage VOUT[V] 2.5 2.0 1.5 1.0 0.5 0.0 2.5 2.0 1.5 1.0 0.5 0.0 0 50 100 150 200 250 O ut put Current IOUT[mA] 300 2.5 2.0 1.5 1.0 0.5 0.0 0 50 100 150 200 250 Output Current IO UT [mA] 300 0 50 100 150 200 250 Output Current IO UT [mA] 300 Fig.7 Output Voltage vs Output Current (BH25NB1WHFV) 0. 5 Fig.8 Output Voltage vs Output Current (BH30NB1WHFV) 0.5 Fig.9 Output Voltage vs Output Current (BH33NB1WHFV) 0.5 VSAT[V] Dropout Voltage VSAT[V] 0. 3 0.3 0. 2 Dropout Voltage 0.2 0. 1 0.1 0. 0 0 50 100 Output Current I OUT[mA] 150 0.0 0 50 100 Output Current IOUT[mA] 150 Dropout Voltage VSAT[V] 0. 4 0.4 0.4 0.3 0.2 0.1 0.0 0 50 100 O ut put Current IOUT[mA] 150 Fig.10 Dropout voltage vs Output Current (BH25NB1WHFV) Fig.11 Dropout voltage vs Output Current Fig.12 Dropout voltage vs Output Current (BH33NB1WHFV) (BH30NB1WHFV) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/8 2011.01 - Rev.B BH□□NB1WHFV series Technical Note 2.60 3.10 3.40 Output Voltage VOUT[V] Output Voltage VOUT[V] Output Voltage VOUT[V] 2.55 3.05 3.35 2.50 3.00 3.30 2.45 2.95 3.25 IOUT=1mA 2 .40 -50 -25 0 25 50 Temp[℃] 75 100 IOUT=1mA 2.90 -50 -25 0 25 50 Temp[℃] 75 100 3.20 -50 -25 0 IOUT=1mA 25 50 Temp[℃] 75 100 Fig.13 Output Voltage vs Temperature (BH25NB1WHFV) 90 80 Ripple Rejection R.R.[dB] Fig.14 Output Voltage vs Temperature (BH30NB1WHFV) 90 80 Ripple Rejection R.R.[dB] 70 60 50 40 30 20 Fig.15 Output Voltage vs Temperature (BH33NB1WHFV) 90 80 Ripple Rejection R.R.[dB] 70 60 50 40 30 20 70 60 50 40 30 20 10 Co=2.2μF Io=10mA 100 1k 10 k 100 Frequency f[Hz] 1M Co=2.2μF Io=10mA 100 1k 10 k Frequency f[Hz] Co=2.2μF Io=10mA 100 1k 10 k 100 Frequency f[Hz] 1M 10 100 1M 10 Fig.16 Ripple Rejection (BH25NB1WHFV) Fig.17 Ripple Rejection (BH30NB1WHFV) Fig.18 Ripple Rejection (BH33NB1WHFV) IOUT = 1 mA → 30 mA IOUT = 1 mA → 30 mA IOUT = 1 mA → 30 mA VOUT 50 mV / div VOUT 50 mV / div VOUT 50 mV / div 100 µs / div 100 µs / div 100 µs / div Fig.19 Load Response (Co = 2.2 µF) (BH25NB1WHFV) Fig.20 Load Response (Co = 2.2 µF) (BH30NB1WHFV) Fig.21 Load Response (Co = 2.2 µF) (BH33NB1WHFV) 1 V / div STBY STBY 1 V / div STBY 1 V / div 1 V / div Co = 1 µF Co = 10 µF VOUT Co = 2.2 µF 100 µs / div VOUT Co = 1 µF 1 V / div Co = 10 µF Co = 2.2 µF 100 µs / div Co = 1 µF 1 V / div Co = 10 µF VOUT Co = 2.2 µF 100 µs / div Fig.22 Output Voltage Rise Time (BH25NB1WHFV) Fig.23 Output Voltage Rise Time (BH30NB1WHFV) Fig.24 Output Voltage Rise Time (BH33NB1WHFV) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/8 2011.01 - Rev.B BH□□NB1WHFV series ●Block diagram, recommended circuit diagram, and pin assignment diagram BH□□NB1WHFV VIN VIN Technical Note 3 VOLTAGE REFERENCE Pin No. 4 VOUT VOUT Symbol STBY GND VIN VOUT N.C. Function Output voltage on/off control (High: ON, Low: OFF) Ground Power supply input Voltage output NO CONNECT Cin 1 2 3 4 5 GND 2 THERMAL PROTECTION OVER CURRENT PROTECTION Co N.C. VSTB STBY 1 CONTROL BLOCK 5 Cin    0.1µF Co    2.2µF Fig.25 ●Power dissipation (Pd) 1. Power dissipation (Pd) Power dissipation calculations include estimates of power dissipation characteristics and internal IC power consumption, and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation. Calculating the maximum internal IC power consumption (PMAX) PMAX = (VIN − VOUT)  IOUT (MAX.) VIN : Input voltage VOUT : Output voltage IOUT (MAX): Max. output current 2. Power dissipation/power dissipation reduction (Pd) HVSOF5 0.6 Board: 70 mm  70 mm  1.6 mm Material: Glass epoxy PCB 0.4 410 mW Pd[W] 0.2 0 0 25 50 75 100 125 Fig. 26 HVSOF5 Power Dissipation/Power Dissipation Reduction (Example) Ta[℃] *Circuit design should allow a sufficient margin for the temperature range so that PMAX < Pd. ●Input Output capacitors It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or X7R, or better models that offer good temperature and DC bias characteristics and high tolerant voltages. Typical ceramic capacitor characteristics 120 100 Capac itance rate of change [% ] 100 Capacitance rate of change [%] Capacitanc e rate of change [%] 50 V tolerance 50 V tolerance 120 95 100 80 80 90 85 80 75 X7R X5R Y5V 60 40 10 V tolerance 16 V tolerance 10 V tolerance 60 40 16 V tolerance 20 20 0 0 0 1 70 DC bias Vdc[V] 2 3 4 0 1 DC bias Vdc[V] 2 3 4 - 25 0 25 Temp[℃] 50 75 Fig.27 Capacitance vs Bias (Y5V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Fig.28 Capacitance vs Bias (X5R, X7R) Fig.29 Capacitance vs Temperature (X5R, X7R, Y5V) 5/8 2011.01 - Rev.B BH□□NB1WHFV series Technical Note ●Output capacitors Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage supply source connected to the VCC. The higher value the output capacitor goes, the more stable the whole operation becomes. This leads to high load transient response. Please confirm the whole operation on actual application board. Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers. 100 BH□□NB1WHFV COUT = 2.2 µF Ta = +25°C 10 ESR[ ] 1 Stable region 0.1 0.01 0 50 100 150 Output Current IOUT [mA] Fig.30 Stable Operation Region (Example) ●Operation Notes 1. Absolute maximum ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses. 2. Thermal design Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions. Inter-pin shorts and mounting errors Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any connection error or if pins are shorted together. Thermal shutdown circuit (TSD) The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is assumed. Overcurrent protection circuit The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or transitioning of the protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to temperatures. Action in strong electromagnetic field Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction. Ground wiring pattern When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns, placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the GND wiring pattern of any external components, either. 3. 4. 5. 6. 7. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/8 2011.01 - Rev.B BH□□NB1WHFV series 8. GND voltage The potential of GND pin must be minimum potential in all operating conditions. Technical Note 9. Back Current In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this current by inserting a bypass diode between the VIN and VOUT pins. Back current VIN OUT STBY GND Fig. 31 Example Bypass Diode Connection 10. Testing on application boards When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress. Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure. Use similar precaution when transporting or storing the IC. 11. Regarding input pin of the IC This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode or transistor. For example, the relation between each potential is as follows: When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode. When GND > Pin B, the P-N junction operates as a parasitic transistor. Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used. Resistor Pin A Pin A P + Transistor (NPN) Pin B C B E B P P + Pin B N P P + N N N Parasitic element P+ N N C E P substrate Parasitic element GND P substrate Parasitic element GND GND GND Parasitic element Other adjacent elements Fig.32 Example of IC structure www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/8 2011.01 - Rev.B BH□□NB1WHFV series ●Ordering part number Technical Note B Part No. H 2 5 N B 1 W Shutdown switch W : Includes switch H F V - T R Output voltage 25:2.5 V 28:2.8 V 2J:2.85 V 29:2.9 V 30:3.0 V 31:3.1 V 33:3.3 V Series NB1 : High ripple rejection Package HFV : HVSOF5 Packaging and forming specification TR: Embossed tape and reel HVSOF5 1.6±0.05 1.0±0.05 5 4 (0.8) 0.2MAX Tape Quantity Direction of feed Embossed carrier tape 3000pcs TR The direction is the 1pin of product is at the upper right when you hold 1.2±0.05 (MAX 1.28 include BURR) (0.3) (0.05) 1.6±0.05 4 5 (0.91) (0.41) ( reel on the left hand and you pull out the tape on the right hand 1pin ) 123 321 0.13±0.05 S 0.6MAX +0.03 0.02 –0.02 0.1 0.5 0.22±0.05 S 0.08 M Direction of feed (Unit : mm) Reel ∗ Order quantity needs to be multiple of the minimum quantity. www.rohm.com © 2011 ROHM Co., Ltd. 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