CMOS LDO Regulator Series for Portable Equipments
Standard CMOS LDO Regulators
BH ŜŜ FB1WG series, BHŜŜ FB1WHFV series,
BH ŜŜ LB1WG series, BHŜŜ LB1WHFV series
Large Current 300mA
CMOS LDO Regulators
BH ŜŜ MA3WHFV Series
No.10020ECT02
Description
The BHŜŜFB1W, BHŜŜLB1W and BHŜŜMA3W series are low dropout CMOS regulators with 150 mA and 300 mA
output that have ±1% high accuracy output voltage.
The BHŜŜFB1W series combines 40µA low current consumption and a 70 dB high ripple rejection ratio by utilizing output
level CMOS technology. The components can be easily mounted into the small standard SSOP5 and the ultra-small
HVSOF5/HVSOF6 packages.
Features
1) High accuracy output voltage: ±1%
2) High ripple rejection ratio: 70 dB (BHŜŜFB1WHFV/WG, BHŜŜLB1WHFV/WG)
3) Low dropout voltage: 60 mV (when current is 100 mA) (BHŜŜMA3WHFV)
4) Stable with ceramic output capacitors
5) Low Bias current : 40µA (IO = 50 mA) (BHŜŜFB1WHFV/WG)
6) Output voltage ON/OFF control
7) Built-in over-current protection and thermal shutdown circuits
8) Ultra-small power package: HVSOF5 (BHŜŜFB1WHFV, BHŜŜLB1WHFV)
9) Ultra-small power package: HVSOF6 (BHŜŜMA3WHFV)
Applications
Battery-driven portable devices and etc.
Line up
150mA BHŜŜFB1W and BHŜŜLB1W Series
Part Number
1.5
1.8
1.85
BHŜŜFB1WG
-
-
-
SSOP5
BHŜŜFB1WHFV
-
-
-
HVSOF5
-
BHŜŜLB1WG
BHŜŜLB1WHFV
2.5
2.8
2.9
3.0
3.1
3.3
Package
-
-
-
-
-
-
SSOP5
-
-
-
-
-
-
HVSOF5
2.8
2.9
3.0
3.1
3.3
300mA BHŜŜMA3WHFV series
Part Number
1.5
1.8
2.5
BHŜŜMA3WHFV
Part Number: B H ŜŜ F B 1 W Ŝ , B H ŜŜ L B 1 W Ŝ
a
b
a
b
Symbol
a
b
Details
Output Voltage Designation
ŜŜ
Output Voltage (V)
Output Voltage (V)
ŜŜ
15
1.5V (Typ.)
2.9V (Typ.)
29
18
1.8V (Typ.)
3.0V (Typ.)
30
1J
1.85V (Typ.)
3.1V (Typ.)
31
25
2.5V (Typ.)
3.3V (Typ.)
33
28
2.8V (Typ.)
Package: G : SSOP5 HFV : HVSOF5
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© 2010 ROHM Co., Ltd. All rights reserved.
Package
HVSOF6
Part Number: B H ŜŜ M A 3 W Ŝ
a
b
Symbol
a
b
1/8
Details
Output Voltage Designation
ŜŜ
Output Voltage (V)
Output Voltage (V)
ŜŜ
15
1.5V (Typ.)
2.9V (Typ.)
29
18
1.8V (Typ.)
3.0V (Typ.)
30
25
2.5V (Typ.)
3.1V (Typ.)
31
28
2.8V (Typ.)
3.3V (Typ.)
33
Package: HFV : HVSOF6
2010.07 - Rev. C
BH ĄĄFB1WG series, BHĄĄFB1WHFV series,
BH ĄĄLB1WG series, BHĄĄLB1WHFV series,
Technical Note
BH ĄĄMA3WHFV series
Absolute maximum ratings (Ta = 25 C)
Parameter
Applied supply voltage
Symbol
VMAX
Pd
Limits
-0.3 ~ +6.5
680 (HVSOF6)
410 (HVSOF5)
Topr
Tstg
540 (SSOP5)
-40 ~ +85
-55 ~ +125
Power dissipation
Operating temperature range
Storage temperature range
Unit
V
mW
C
C
Recommended operating range
Parameter
Power supply voltage
Output current
BH
MA3W
BH
FB1W
BH
LB1W
Symbol
Min.
Typ.
VIN
2.5
-
5.5
V
-
-
300
mA
-
-
150
mA
-
-
150
mA
IOUT
Max.
Unit
Recommended operating conditions
Symbol
Min.
Typ.
Max.
Unit
Input capacitor
Parameter
CIN
0.1
-
-
μF
Output capacitor
Co
1.0
-
-
μF
Ceramic capacitor recommended
Noise decrease capacitor
Cn
-
0.01
0.22
μF
Ceramic capacitor recommended
Max.
VOUT 1.01
70
1.0
450
20
30
90
420 3
450 5
-
Unit
V
μA
μA
dB
mV
mV
mV
mV
mV
mA
Conditions
IOUT=1mA
IOUT=50mA
STBY=0V
VRR=-20dBv, fRR=1kHz, IOUT=10mA
IOUT=1mA to 30mA
IOUT=30mA to 1mA
VIN=0.98 VOUT, IOUT=100mA
4
VIN=VOUT+0.5V to 5.5V
IOUT=1mA to 100mA
IOUT=1mA to 150mA
mA
Vo=VOUT 0.98
mA
Vo=0V
2200
Vcc
0.3
kΩ
V
V
BH
FB1WHFV/WG , BH
Parameter
Output voltage
Circuit current
Circuit current(STBY)
Ripple rejection ratio
Load response 1
Load response 2
Dropout voltage
Line regulation
Load regulation (1)
Load regulation (2)
Over current protection
limit current
Short current
STBY pull-down resistor
ON
STBY
control voltage
OFF
1
3
Conditions
Ceramic capacitor recommended
LB1WHFV/WG
Symbol
Min.
VOUT VOUT 0.99
I GND
I STBY
RR
LTV1
LTV2
VSAT
VDL1
VDL01
VDL02
150 3
ILMAX
150 5
I SHORT
RSTB
VSTBH
VSTBL
550
1.5
-0.3
Typ.
VOUT
40
70
50
50
250
2
10
15
250
300
50
40
1100
-
3
5
3
5
5
BH
BH25,28,29,30,31,33WHFV/G
MA3WHFV
Parameter
Symbol
Min.
VOUT
Typ.
Max.
VOUT
I GND
-
I STBY
RR
Unit
Conditions
V
IOUT=1mA
μA
IOUT=1mA
65
95
-
-
1.0
μA
STBY=0V
-
60
-
dB
VRR=-20dBv, fRR=1kHz, IOUT=10mA
VSAT1
-
60
90
mV
VIN=0.98 X V OUT, IOUT=100mA
VDL1
-
2
20
mV
VIN=VOUT+0.5V to 5.5V
VDL01
-
6
30
mV
IOUT=1mA to 100mA
VDL02
-
18
mV
IOUT=1mA to 300mA
-
±100
90
-
-
600
100
-
ILMAX
I SHORT
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2/8
ppm/ C IOUT=1mA, Ta=-40 to +85 C
mA
mA
Vo=VOUT X 0.85
Vo=0V
2010.07 - Rev. C
BH □□FB1WG series, BH□□FB1WHFV series,
BH □□LB1WG series, BH□□LB1WHFV series,
Technical Note
BH □□MA3WHFV series
Typical characteristics
• Output voltage-input voltage
1.5
4
BH28FB1WHFV
~ Condition ~
~ Condition ~
VIN=0 to 5.5V
VIN=0 to 5.5V
VIN=0 to 5.5V
Cin=0.1μF
Cin=0.1μF
Cin=1.0μF
3
Co=1.0μF
ROUT=1.5kΩ
Ta=25°C
1
3
Co=1.0μF
ROUT=2.8kΩ
Ta=25°C
2
0.5
1
0
1
1.5
2 2.5 3 3.5 4
Input Voltage VIN[V]
4.5
5
5.5
Co=1.0μF
Cn=none
ROUT=3.0kΩ
Ta=25°C
2
1
0
0 0.5
BH30MA3WHFV
~ Condition ~
Output Voltage VOUT[V]
Output Voltage VOUT[V]
4
BH15LB1WHFV
Output Voltage VOUT[V]
2
0
0
0.5
1 1.5 2 2.5 3 3.5 4
Input Voltage VIN[V]
4.5 5
0
5.5
0.5
1
4
4.5 5
5.5
Fig.3
Fig.2
Fig.1
1.5 2 2.5 3 3.5
Input Voltage VIN[V]
• GND current-input voltage
VIN=0 to 5.5V
VIN=0 to 5.5V
50
Cin=0.1μF
Cin=0.1μF
Co=1.0μF
Co=1.0μF
ROUT=1.5kΩ
40
Ta=25°C
30
20
100
BH28FB1WHFV
~ Condition ~
GND Current IGND[μA]
50
GND Current IGND[μA]
60
BH15LB1WHFV
~ Condition ~
ROUT=2.8kΩ
40
Ta=25°C
30
20
VIN=0 to 5.5V
80
0
1.5
2 2.5 3 3.5
4 4.5 5 5.5
Input Voltage VIN[V]
Cn=none
ROUT=3.0kΩ
60
Ta=25°C
40
20
0
0 0.5 1
Cin=1.0μF
Co=1.0μF
10
10
BH30MA3WHFV
~ Condition ~
GND Current IGND[μA]
60
0
0
0.5
1
Fig.4
1.5
2 2.5 3 3.5
Input Voltage VIN[V]
4
4.5
5
0
5.5
0.5
1
1.5 2 2.5 3 3.5
Input Voltage VIN[V]
4
4.5 5
5.5
Fig.6
Fig.5
• Output voltage-output current
3.5
BH15LB1WHFV
3
Ta=25°C
1
VIN=4.0V
VOUT=2.83V to 0V
Output Voltage VOUT[V]
Output Voltage VOUT[V]
Co=1.0μF
~ Condition ~
3
VIN=3.8V
VOUT=1.53V to 0V
Cin=0.1μF
BH30MA3WHFV
~ Condition ~
VIN=3.5V
1.5
3.5
BH28FB1WHFV
~ Condition ~
VOUT=3.03V to 0V
2.5
Cin=0.1μF
2.5
Co=1.0μF
Ta=25°C
2
1.5
Output Voltage[V]
2
Cin=1.0μF
Co=1.0μF
Cn=none
2
Ta=25°C
1.5
1
1
0.5
0.5
0.5
0
0
0
0
100
200
300
Output Current IOUT[mA]
0
400
50
Fig.7
100
150
200
Output Current IOUT[mA]
250
300
0
100
200
300 400
500
Output Current IOUT[mA]
600
700
Fig.9
Fig.8
• Dropout voltage-output current
500
300
BH28FB1WHFV
~ Condition ~
VIN=2.74V
Cin=0.1μF
Co=1.0μF
Ta=25°C
300
200
100
0
VIN=2.940V
250
IOUT=0 to 150mA
Dropout Voltage VSAT[mV]
Dropout Voltage VSAT[mV]
400
BH30MA3WHFV
~ Condition ~
IOUT=0 to 300mA
Cin=1.0μF
Co=1.0μF
200
Cn=none
Ta=25°C
150
100
50
0
0
50
100
Output Current IOUT[mA]
150
Fig.10
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0
50
100
150
200
Output Current IOUT[mA]
250
300
Fig.11
3/8
2010.07 - Rev. C
BH □□FB1WG series, BH□□FB1WHFV series,
BH □□LB1WG series, BH□□LB1WHFV series,
Technical Note
BH □□MA3WHFV series
Typical Characteristics
• Output voltage-temperature
Ω
Ω
°
°
°
°
Ω
°
°
• Ripple reflection-frequency
Ω
Ω
Ω
°
°
°
• Load response characteristics (CO = 1.0 μF)
°
°
°
• Output voltage startup time
°
°
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4/8
2010.07 - Rev. C
BH □□FB1WG series, BH□□FB1WHFV series,
BH □□LB1WG series, BH□□LB1WHFV series,
Technical Note
BH □□MA3WHFV series
Block diagrams
Power supply input
Ground
Output voltage ON/OFF control
(High: ON, Low: OFF)
NO CONNECT
Voltage output
Output voltage ON/OFF control
(High: ON, Low: OFF)
Ground
Power supply input
Voltage output
NO CONNECT
Terminal No. Terminal Name Function
Power supply input
Voltage output
Voltage output
Noise reducing capacitor
ground terminal
Ground
Output voltage ON/OFF control
(High: ON, Low: OFF)
Power dissipation Pd
1. Power dissipation
Power dissipation calculation include estimates of power dissipation characteristics and internal IC power consumption
and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is
exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current
capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation
is not exceeded during IC operation.
Calculating the maximum internal IC power consumption (PMAX)
Input voltage
Output voltage
Output current
2. Power dissipation characteristics (Pd)
Board: 70 mm X 70 mm X 1.6 mm
Material: Glass epoxy PCB
Board: 70 mm X 70 mm X 1.6 mm
Material: Glass epoxy PCB
°
Fig. 26: HVSOF6
Power Dissipation/
Power Dissipation Reduction (Example)
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© 2010 ROHM Co., Ltd. All rights reserved.
°
Fig. 27: HVSOF5
Power Dissipation/
Power Dissipation Reduction (Example)
5/8
Board: 70 mm X 70 mm X 1.6 mm
Material: Glass epoxy PCB
°
Fig. 28: SSOP5
Power Dissipation/
Power Dissipation Reduction (Example)
2010.07 - Rev. C
BH □□FB1WG series, BH□□FB1WHFV series,
BH □□LB1WG series, BH□□LB1WHFV series,
Technical Note
BH □□MA3WHFV series
Input capacitor
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors will be used when the power supply impedance increases or when long wiring routes are used, so
they should be checked once the IC has been mounted.
Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or
X7R or better models that offer good temperature and DC bias characteristics and high torelant voltages.
120
100
50V torelance
80
60
10V torelance 16V torelance
40
20
0
100
Rate of change in electrostatic capacitance (%)
Rate of change in electrostatic capacitance (%)
Rate of change in electrostatic capacitance (%)
Examples of ceramic capacitor characteristics
50V torelance
95
90
16V torelance
85
10V torelance
80
75
70
1
2
3
4
DC bias Vdc (V)
Fig. 30: Capacitance-bias characteristics (X5R, X7R)
1
2
3
4
DC bias Vdc (V)
Fig. 29: Capacitance-bias characteristics (Y5V)
0
0
120
100
80
X7R
X5R
Y5V
60
40
20
0
-25
0
25
50
75
Temperature (°C)
Fig. 31: Capacitance–temperature characteristics
(X5R, X7R, Y5V)
Output capacitor
To prevent oscillation at the output, it is recommended that the IC be operated at the stable region show in below Fig. It
operates at the capacitance of more than 1.0μF. As capacitance is larger, stability becomes more stable and characteristic of
output load fluctuation is also improved.
BHŜŜLB1WHFV/WG
Ta=+25°C
100
1
Stable region
0.1
0.01
Ta=+25°C
BHŜŜMA3WHFV
100
1
Stable region
50
100
Output current IOUT(mA)
150
Fig. 32 BHŜŜLB1WHFV/WG
Stable operating region characteristics (Example)
0.01
Cin=1.0μF
Ta=+25°C
1
Stable region
0.1
0.1
0
Cout=1.0μF
10
10
ESR(Ω)
ESR(Ω)
10
Cout=2.2μF
ESR(Ω)
100
Cout=1.0μF
BHŜŜFB1WHFV/WG
0.01
0
50
100
150
Output current IOUT(mA)
Fig. 33 BHŜŜFB1WHFV/WG
Stable operating region characteristics (Example)
0
100
200
Output current IOUT(mA)
300
Fig. 34 BHŜŜMA3WHFV
Stable operating region characteristics (Example)
Other precautions
• Over current protection circuit
The IC incorporates a built-in over current protection circuit that operates according to the output current capacity. This circuit
serves to protect the IC from damage when the load is shorted. The protection circuits use fold-back type current limiting and
are designed to limit current flow by not latching up in the event of a large and instantaneous current flow originating from a
large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and
unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or
transitioning of the protection circuits.
• Thermal shutdown circuit
This system has a built-in thermal shutdown circuit for the purpose of protecting the IC from thermal damage. As shown
above, this must be used within the range of power dissipation, but if the power dissipation happens to be continuously
exceeded, the chip temperature increases, causing the thermal shutdown circuit to operate. When the thermal shutdown
circuit operates, the operation of the circuit is suspended. The circuit resumes operation immediately after the chip
temperature decreases, so the output repeats the ON and OFF states. There are cases in which the IC is destroyed due to
thermal runaway when it is left in the overloaded state. Be sure to avoid leaving the IC in the overloaded state.
• Actions in strong magnetic fields
Use caution when using the IC in the presence of a strong magnetic field as such environments may occasionally cause the chip
to malfunction.
• Back current
In applications where the IC may be exposed to back current flow, it is recommended to create a route t dissipate this current
by inserting a bypass diode between the V IN and V OUT pins.
• GND potential
Ensure a minimum GND pin potential in all operating conditions.
In addition, ensure that no pins other than the GND pin carry a voltage less than or equal to the GND pin, including during
actual transient phenomena.
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6/8
2010.07 - Rev. C
BH □□FB1WG series, BH□□FB1WHFV series,
BH □□LB1WG series, BH□□LB1WHFV series,
Technical Note
BH □□MA3WHFV series
Noise terminal (BHŜŜMA3WHFV)
The terminal is directly connected to inward normal voltage source. Because this has low current ability, load exceeding
100nA will cause some instability at the output. For such reasons, we urge you to use ceramic capacitors which have less
leak current. When choosing noise the current reduction capacitor, there is a trade-off between boot-up time and stability. A
bigger capacitor value will result in lesser oscillation but longer boot-up time for VOU T.
VOUT startup time t (msec)
100
BH30MA3WHFV
~ Condition ~
VIN=4.0V
Cin=1.0μF
Co=1.0μF
ROUT=3.0kΩ
Ta=25°C
10
1
0.1
0.01
100P
1000P
0.01μ
0.1μ
noise-filtering capacitor capacitance Cn (F)
Fig. 35: V OUT startup time vs. noise-filtering capacitor capacitance characteristics (Example)
Regarding input pin of the IC
This monolithi c IC contains P+ isolation and P substrat e layer s between adjacent
elements in order to keep them isolated. P/N junctions are formed at the intersection of
these P layers with the N layers of other elements to create a variety of parasitic elements.
For example, when a resistor and transistor are connected to pins as shown in Fig.37
The P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or
GND > (Pin B) for the transistor (NPN).
Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described
above combines with the N layer of other adjacent elements to operate as a parasitic
NPN transistor.
The formation of parasitic elements as a result of the relationships of the potentials of
different pins is an inevitable result of the IC's architecture. The operation of parasitic
elements can cause interference with circuit operation as well as IC malfunction and
damage. For these reasons, it is necessary to use caution so that the IC is not used in a
way that will trigger the operation of parasitic elements, such as by the application of
voltage lower than the GND (P substrate) voltage to input pins.
Transistor (NPN)
OUT
VCC
CTL
GND
Fig. 36: Example of bypass
diode connection
(Terminal B)
B
Resistor
(Terminal A)
back current
(Terminal B)
O
C
E
B
E
GND
P+
N
P+
P
P+
GND
Other adjacent elements
P+
P
N
Parasitic elements
N
N
N
N
N
(Terminal A)
P
P-board
P
Parasitic element
Parasitic element
GND
Parasitic elements
GND
GND
Fig.37
Part number selection
B H
ROHM
part number
3 0
Output
voltage
F B 1
Current capacity
MA3 : 300mA
FB1 : 150mA
LB1 : 150mA
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© 2010 ROHM Co., Ltd. All rights reserved.
W
Shutdown
switch
W : With switch
7/8
H F V
Package
HFV : HVSOF6
HVSOF5
G : SSOP5
-
T R
Package specification
TR : Embossed taping
2010.07 - Rev. C
BH □□MA3WHFV series
Technical Note
(Unit:mm)
(Unit:mm)
(Unit:mm)
0.1
SSOP5
(0.45)
(1.2)
0.13±0.05
(1.4)
123
0.22±0.05
(0.15)
3 2 1
654
3.0±0.1
5
2.6±0.1
(0.41)
(0.91)
4
(1.5)
1.6±0.1
0.2Max.
(0.05)
1.6±0.05
0.42 +0.05
-0.04
0.95
1 2 3
0.6Max.
0.05±0.05
1.25Max.
1.1±0.05
0.13
+0.05
-0.03
0.3
5 4
1.2±0.05
3
0.8
(1.28MAX.)
2
1.0±0.05
0.2Min.
+0.2
2.8±0.2
1.6 -0.1
1
(1.8MAX.)
1.6±0.05
4
0.75Max.
+6°
4° - 4°
2.9±0.2
5
(2.8MAX.)
BH □□FB1WG series, BH□□FB1WHFV series,
BH □□LB1WG series, BH□□LB1WHFV series,
0.145±0.05
S
0.1 S
0.22±0.05
0.5
0.5
HVSOF5
HVSOF6
(Package Specification) HVSOF6
(Package Specification) SSOP5, HVSOF5
Package Form
Embossed taping
Package Form
Embossed taping
Package Quantity
3000pcs
Package Quantity
3000pcs
Package
Orientation
TR
(When the reel is held with the left hand and the tape is drawn out with the right hand,
the No. 1 pin of the product faces the upper right direction.)
Package
Orientation
TR
(When the reel is held with the left hand and the tape is drawn out with the right hand,
the No. 1 pin of the product faces the upper right direction.)
No. 1 pin
Pulling side
Reel
* Please make orders in multiples of the package quantity.
* Please make orders in multiples of the package quantity.
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8/8
2010.07 - Rev. C
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
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