BH6172GU-E2

Power Management ICs for Mobile Phones System Regulator with High Efficiency DC/DC Converters BH6172GU No.11032EAT04 ●Descriptions BH6172GU incorporates 1 DCDC+ 5 Linear LDO regulators. It is integrated in a small 2.6mm×2.6mm size package, with 16 steps adjustable Vo’s for every channel, low voltage output (0.8V~) to support almost any kind of mobile application now available. ●Features 2 1) 1ch 500mA, high efficiency Step-down Converter. (16 steps adjustable VO by I C) 2 2) 5-channel CMOS-type LDOs. (16 steps adjustable VO by I C, 150mA×3, 300mA×2) 3) Power ON/OFF control enabled by I2C interface or external pin 4) I2C compatible Interface. (Device address is “1001111”) 5) Wafer Level CSP package(2.6mm×2.6mm) for space-constrained applications 6) Discharge resistance selectable for power-down sequence ramp speed control 7) Over-current protection in all LDO regulators 8) Over-current protection in Step-down Converter 9) Over-voltage protection in Step-down Converter 10) Thermal shutdown protection ●Applications Mobile phones, Portable game systems, Portable mp3 players, Portable DVD players, Portable TV, Portable GPS, PDA, Portable electronic dictionaries, etc. ●Absolute maximum ratings (Ta=25℃) Parameter Maximum Supply Voltage (VBAT) Maximum Supply Voltage (PBAT) Maximum Supply Voltage (VUSB) Maximum Supply Voltage (DVDD) Maximum Input Voltage 1 (LX, FB, OUT1, OUT2, OUT3, OUT4, OUT5, EN_LD1, EN_LD2, EN_LD3, EN_LD4) Maximum Input Voltage 2 (NRST, CLK, DATA) Power Dissipation Operating Temperature Range Storage Temperature Range * Symbol VBATMAX VPBATMAX VUSBMAX DVDDMAX VINMAX1 VINMAX2 Pd Topr Tstg Ratings 6.0 6.0 6.0 4.5 VBAT + 0.3 DVDD + 0.3 900*1 -35 ～ +85 -55 ～ +125 Unit V V V V V V mW ℃ ℃ This is an allowable loss of the ROHM evaluation glass epoxy board(60mm×60mm×16mm). To use at temperature higher than 25℃ , derate 9.0mW per 1℃. *1 Must not exceed Pd or ASO. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/16 2011.03 - Rev.A BH6172GU ●Recommended Operating Conditions (Ta=25℃) Parameter VBAT Voltage PBAT Voltage VUSB Voltage DVDD Voltage Symbol VBAT VPBAT VUSB VDVDD Ratings 2.20 ～ 5.50*2 2.20 ～ 5.50*2 2.20 ～ 5.50*2*3 1.70 ～ 4.20*4 Unit V V V V Technical Note *2 Whenever the VBAT or PBAT or VUSB voltage is under the LDO, SWREG output voltage, or else under certain levels, the LDO and SWREG output is not guaranteed to meet its published specifications. *3 VUSB Power Supply can be externally connected to the VBAT, PBAT Power Supply when necessary. *4 The DVDD Voltage must be under the Battery Voltage VBAT, PBAT at any times. ●Electrical Characteristics (Unless otherwise specified, Ta=25℃, VBAT=PBAT =3.6V, VUSB=5.0V) Limits Parameter Symbol Unit Condition Min. Typ. Max. Circuit Current VBAT Circuit Current 1 (OFF) VUSB Circuit Current 1 (OFF) IQVB1 IQUSB1 0.4 0 1 1 µA µA LDO1～5=OFF SWREG1=OFF NRST=L DVDD=0V LDO1～5=OFF SWREG1=OFF NRST=L DVDD=0V VUSB=VBAT external connection LDO1～5=OFF SWREG1=OFF NRST=H DVDD=2.6V LDO1～5=OFF SWREG1=OFF NRST=H DVDD=2.6V VUSB=VBAT external connection LDO1～5=ON(no load, initial voltage) SWREG1=ON(no load, initial voltage) NRST=H DVDD=2.6V LDO1～5=ON(no load, initial voltage) SWREG1=ON(no load, initial voltage) NRST=H DVDD=2.6V VUSB=VBAT external connection VBAT Circuit Current 2 (OFF) IQVB2 - 0.4 1 µA VBAT Circuit Current 3 (STANDBY) VUSB Circuit Current 2 (STANDBY) IQVB3 IQUSB2 - 0.7 0 1.4 1 µA µA VBAT Circuit Current 4 (STANDBY) IQVB4 - 0.7 1.4 µA VBAT Circuit Current 5 (Active) VUSB Circuit Current 3 (Active) IQVB5 IQUSB3 - 170 35 300 70 µA µA VBAT Circuit Current 6 (Active) IQVB6 - 200 350 µA ◎This product is not especially designed to be protected from radioactivity. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/16 2011.03 - Rev.A BH6172GU Technical Note ●Electrical Characteristics (Unless otherwise specified, Ta=25℃, VBAT=PBAT =3.6V, VUSB=5.0V, DVDD=2.6V) Limits Parameter Symbol Unit Condition Min. Typ. Max. Logic pin character Input “H” level Input “L” level Input leak current Input “H” level Input “L” level Input leak current VIH1 VIL1 IIC1 VIH2 VIL2 IIC2 DVDD ×0.7 -0.3 0 1.44 -1 DVDD ×0.8 -0.3 -1 0.3 0 DVDD +0.3 DVDD ×0.3 1 0.4 1 DVDD +0.3 DVDD ×0.2 1 0.4 V V µA V V µA Pin voltage: DVDD Pin voltage: 0 V NRST (CMOS input) EN_LD1, EN_LD2, EN_LD3, EN_LD4 (NMOS input) Digital characteristics (Digital pins: CLK and DATA ) Input "H" level Input "L" level Input leak current DATA output "L" level voltage SWREG Output Voltage Output current Efficiency Oscillating Frequency Output Inductance Short circuit current Output Capacitance VOSW IOSW ηSW fOSC LSWREG ISHTSW CSWREG 0.94 1.5 3.3 1.00 90 1.7 2.2 500 4.7 1.06 500 V mA % MHz µH mA µF initial value Io=100mA Vo=1.00V Io=100mA, Vo=2.40V, VBAT=3.2V Vo=1.00V Ta= -30～75℃ Ta= -30～75℃ Ta= -30～75℃ with SWREG's DC bias VIH3 VIL3 IIC3 VOL 0 V V µA V Pin voltage: DVDD IOL=6mA www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/16 2011.03 - Rev.A BH6172GU Technical Note ●Electrical Characteristics (Unless otherwise specified, Ta=25℃, VBAT=PBAT =3.6V, VUSB=5.0V) Limits Parameter Symbol Unit Condition Min. Typ. Max. LDO1 Output Voltage Output current Dropout Voltage Input Voltage Stability Load Stability Ripple rejection ratio Short circuit current Output Capacitor LDO2 Output Voltage Output current Dropout Voltage Input Voltage Stability Load Stability Ripple rejection ratio Short circuit current Output Capacitor LDO3 Output Voltage Output current Dropout Voltage Input Voltage Stability Load Stability Ripple rejection ratio Short circuit current Output Capacitor VOM3 VOM3C VOM3DP ⊿VIM3 ⊿VLM3 RRM3 ISHTM3 COUT3 2.716 2.800 0.1 2 20 60 180 1.0 2.884 300 V mA V mV mV dB mA µF initial value Io=1mA@VBAT=4.5V Io=150mA@VBAT=3.4V Vo=2.8V Io=50mA VBAT=3.4～4.5V, Io=50mA Vo=2.8V Io=50µA～300mA, VBAT=3.6V Vo=2.8V VR=-20dBV, fR=120Hz Io=50mA, Vo=2.6V BW=20Hz～20kHz Vo=0V Ta= -30～75℃ with LDO's DC bias VOM2 VOM2C VOM2DP ⊿VIM2 ⊿VLM2 RRM2 ISHTM3 COUT2 2.522 2.600 0.1 2 20 60 180 1.0 2.678 150 V mA V mV mV dB mA µF initial value Io=1mA@VBAT=4.5V Io=150mA@VBAT=3.4V Vo=2.6V Io=50mA VBAT=3.4～4.5V, Io=50mA Vo=2.6V Io=50µA～150mA, VBAT=3.6V Vo=2.6V VR=-20dBV, fR=120Hz Io=50mA, Vo=2.6V BW=20Hz～20kHz Vo=0V Ta= -30～75℃ with LDO's DC bias VOM1 VOM1C VOM1DP ⊿VIM1 ⊿VLM1 RRM1 ISHTM3 COUT1 0.970 1.000 0.1 2 20 60 180 1.0 1.030 150 V mA V mV mV dB mA µF initial value Io=1mA@VBAT=4.5V Io=150mA@VBAT=3.4V Vo=1.0V Io=50mA VBAT=3.4～4.5V, Io=50mA Vo=1.0V Io=50µA～150mA, VBAT=3.6V Vo=1.0V VR=-20dBV, fR=120Hz Io=50mA, Vo=2.6V BW=20Hz～20kHz Vo=0V Ta= -30～75℃ with LDO's DC bias www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/16 2011.03 - Rev.A BH6172GU Technical Note ●Electrical Characteristics (Unless otherwise specified, Ta=25℃, VBAT=PBAT =3.6V, VUSB=5.0V) Limits Parameter Symbol Unit Condition Min. Typ. Max. LDO4 Output Voltage Output current Dropout Voltage Input Voltage Stability Load Stability Ripple rejection ratio Short circuit current Output Capacitor LDO5 Output Voltage Output current Dropout Voltage Input Voltage Stability Load Stability Ripple rejection ratio Short circuit current Output Capacitor VOM5 VOM5C VOM5DP ⊿VIM5 ⊿VLM5 RRM5 ISHTM5 COUT5 3.201 3.300 0.1 2 20 60 180 1.0 3.399 150 V mA V mV mV dB mA µF initial value Io=1mA@VUSB=5.5V Io=150mA@VUSB=4.4V Vo=3.3V Io=50mA VUSB=4.4～5.5V, Io=50mA Vo=3.3V Io=50µA～150mA, VUSB=5.5V Vo=3.3V VR=-20dBV, fR=120Hz Io=50mA, Vo=2.6V BW=20Hz～20kHz Vo=0V Ta= -30～75℃ with LDO's DC bias VOM4 VOM4C VOM4DP ⊿VIM4 ⊿VLM4 RRM4 ISHTM4 COUT4 1.746 1.800 0.1 2 30 60 340 1.0 1.854 300 V mA V mV mV dB mA µF initial value Io=1mA@VBAT=4.5V Io=300mA@VBAT=3.4V Vo=1.8V Io=50mA VBAT=3.4～4.5V, Io=50mA Vo=1.8V Io=50µA～300mA, VBAT=3.6V Vo=1.8V VR=-20dBV, fR=120Hz Io=50mA, Vo=2.6V BW=20Hz～20kHz Vo=0V Ta= -30～75℃ with LDO's DC bias www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/16 2011.03 - Rev.A BH6172GU ●SWREG & LDOs Output Voltage table Parameter SWREG LDO1 LDO2 LDO3 LDO4 LDO5 Usage example CORE CORE I/O1 MEMORY I/O2 USB Power Supply VBAT/PBAT VBAT VBAT VBAT VBAT VBAT/VUSB Initial Output Voltage 1.00V 1.00V 2.60V 2.80V 1.80V 3.30V Load max 500mA 150mA 150mA 300mA 300mA 150mA Technical Note Adjustable range 0.80-2.40V 1.00-3.30V 1.00-3.30V 1.20-3.30V 1.20-3.30V 1.20-3.30V Parameter SWREG 0.80V 0.85V 0.90V 0.95V 1.00V 1.05V 1.10V LDO1 1.00V 1.10V 1.20V 1.30V 1.40V 1.50V 1.60V 1.70V 1.80V 1.85V 2.60V 2.70V 2.80V 2.85V 3.00V 3.30V LDO2 1.00V 1.10V 1.20V 1.30V 1.40V 1.50V 1.60V 1.70V 1.80V 1.85V 2.60V 2.70V 2.80V 2.85V 3.00V 3.30V LDO3 1.20V 1.30V 1.40V 1.50V 1.60V 1.70V 1.80V 1.85V 1.90V 2.00V 2.60V 2.70V 2.80V 2.85V 3.00V 3.30V LDO4 1.20V 1.30V 1.40V 1.50V 1.60V 1.70V 1.80V 1.85V 1.90V 2.00V 2.60V 2.70V 2.80V 2.85V 3.00V 3.30V LDO5 1.20V 1.30V 1.40V 1.50V 1.60V 1.70V 1.80V 1.85V 1.90V 2.00V 2.60V 2.70V 2.80V 2.85V 3.00V 3.30V Programmable Output Voltages 1.15V 1.20V 1.365V 1.40V 1.50V 1.65V 1.80V 1.85V 2.40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/16 2011.03 - Rev.A BH6172GU ●Block diagram, Ball matrix VBAT1 4.7µF VBAT2 Technical Note DVDD DATA CLK NRST LDO1 1.00-3.30V 0.1V step init 1.00V OUT1 150mA 1µF EN_LD1 I2CIF LDO2 1.00-3.30V 0.1V step init 2.60V OUT2 150mA 1µF EN_LD2 E D C B A VBAT1 TEST2 OUT4 VBAT2 OUT3 OUT2 EN_LD2 EN_LD3 NRST OUT1 PBAT 4.7µF 4.7µF 2.2µH LDO3 LX PGND init 2.80V OUT3 300mA 1µF EN_LD3 SWREG 0.8-2.40V 500mA init 1.00V 1.20-3.30V 0.1V step GND EN_LD1 EN_LD4 CLK DVDD FB LDO4 1.20-3.30V 0.1V step init 1.80V 300mA OUT4 1µF EN_LD4 VUSB 1µF REFC TEST DATA FB (OPEN) TEST (OPEN) TEST2 REFC 0.1µF OUT5 VUSB PGND LX PBAT REF LDO5 1.20-3.30V 0.1V step init 3.30V 150mA OUT5 1µF 1 2 3 4 5 Fig.1 Block diagram ●Pin description Ball No. B4 C4 E1 E4 A5 A4 A3 B5 D4 D5 D1 E5 E3 A1 B1 C2 D2 D3 C3 A2 C5 C1 B3 E2 * GND Fig.2 Ball matrix PIN Name DATA CLK VBAT1 VBAT2 PBAT LX PGND FB NRST OUT1 OUT2 OUT3 OUT4 OUT5 REFC EN_LD1 EN_LD2 EN_LD3 EN_LD4 VUSB DVDD GND TEST TEST2 Data input/output for I2C CLK input for I2C Power Supply 1 Power Supply 2 Power Supply for SWREG Inductor Connect pin for SWREG Ground for SWREG Voltage Feed back pin for SWREG RESET Input Pin (Low Active) LDO1 Output LDO2 Output LDO3 Output LDO4 Output LDO5 Output Reference Voltage Output LDO1 Enable Pin LDO2 Enable Pin LDO3 Enable Pin LDO4 Enable Pin USBVBUS Power Supply*1 Digital Power Supply Analog Ground Function TEST PIN (Always keep OPEN at normal use) TEST PIN (Always keep OPEN at normal use) EST, TEST2 pin is used during our company shipment test. lease keep TEST pin and TEST2 pin “OPEN” at all times. *1 USB Power Supply can be externally connected to the VBAT Power Supply when necessary. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/16 2011.03 - Rev.A BH6172GU Technical Note ●I2C Bus Interface 2 The I C compatible synchronous serial interface provides access to programmable functions and register on the device. This protocol uses a two-wire interface for bi-directional communications between the LSI’s connected to the bus. The two interface lines are the Serial Data Line (DATA), and the Serial Clock Line (CLK). These lines should be connected to the power supply DVDD by a pull-up resistor, and remain high even when the bus is idle. 1. Start and Stop Conditions When CLK is high, pulling DATA low produces a start condition and pulling DATA high produces a stop condition. Every instruction is started when a start condition occurs and terminated when a stop condition occurs. During read, a stop condition causes the read to terminate and the chip enters the standby state. During write, a stop condition causes the fetching of write data to terminate, after which writing starts automatically. Upon the completion of writing, the chip enters the standby state. Two or more start conditions cannot be entered consecutively. tSU.STA tHD.STA tSU.STO CLK DATA Start condition Stop condition Fig.3 I C Start, Stop condition 2. Data transmission Data on the DATA input can be modified while CLK is low. When CLK is high, modifying the DATA input means a start or stop condition. tSU.DAT tHD.DAT 2 CLK DATA Modify data Modify data 2 Fig.4 I C Data Transmission Timing All other acknowledge, write, and read timings all conform to the I2C standard. 3. Device addressing The device address for this device is “1001111”. Device address Read/write instruction code 1 MSB 0 0 1 1 1 1 R/W LSB 2 Fig.5 I C device address www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/16 2011.03 - Rev.A BH6172GU ●I2C Bus AC specification Characteristics CLK clock frequency CLK clock “low” time CLK clock “high” time Bus free time Start condition hold time Start condition setup time Data input hold time Data input setup time Stop condition setup time Symbol fCLK tLOW tHIGH tBUF tHD.STA tSU.STA tHD.DAT tSU.DAT tSU.STO Min. 0 1.3 0.6 1.3 0.6 0.6 0 100 0.6 Max. 400 Unit kHz µs µs µs µs µs ns ns µs Technical Note tF tHIGH tLOW tR CLK tSU.STA tHD.STA tHD.DAT tSU.DAT tSU.STO DATA (INPUT) tBUF Fig.6 Bus timing 1 CLK DATA (INPUT) DO tWR Write data input Acknowledge output Stop condition Start condition Fig.7 Bus timing 2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/16 2011.03 - Rev.A BH6172GU ●I2C Register information ○REGCNT(SWREGON, LDO*ON) Control each SWREG, LDO. 0 1 ON OFF Technical Note ○SWADJ(SWREGADJ[3:0]) Change SWREG output voltage by 16 steps. “0000” ～ 0.80V ～ 2.40V 1.00V(LDO1, 2), 1.20V(LDO3, 4, 5) ～ 3.30V 1kΩ 10kΩ Discharge disable Discharge enable External enable pin selected I2C register selected “1111” ○LDOADJ*(LDO*ADJ[3:0]) Change LDO1～5 output voltage by 16 steps. “0000” ～ “1111” 0 1 0 1 0 1 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. ○PDSEL(SWPDSEL, LDO*PDSEL) Change the discharge resistance of SWREG, LDO. ○PDCNT(SWPD, LDO*PD) Enable/disable the discharge resistance of SWREG, LDO. ○EN_SEL(ENLD*_EN) 2 Select either an enable pin or I C register for LDO1～4 ON/OFF control. 10/16 2011.03 - Rev.A BH6172GU ●Reference data(ICC) Technical Note ICC(OFF) VUSB=5.0V 10 9 8 7 I_VBAT [uA] I_VBAT [uA] 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 VBAT [V] 4 4.5 5 5.5 6 10 9 8 7 6 5 4 3 2 1 0 0 0.5 1 ICC(OFF) VBAT=VUSB short 1.5 2 2.5 3 3.5 VBAT [V] 4 4.5 5 5.5 6 ICC(STBY) VBAT=VUSB short 10 9 8 7 I_VBAT [mA] 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 ICC(ACTIVE) VBAT=VUSB short I_VBAT [uA] 6 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 VBAT [V] 4 4.5 5 5.5 6 3.2 3.7 4.2 VBAT [V] 4.7 5.2 5.7 ●Reference data(SWREG) SWREG L in e Re g u lat io n V O=1.0V 6 5.5 5 4.5 4 3.5 FB [V] 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 VB AT [ V] 3.5 4 4.5 5 5.5 6 VBAT 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 50 100 150 200 250 IO [mA] 300 350 400 450 500 SWREG L o ad Re g u lat io n V O=1.0V FB [ V] SWREG Ef f icie n cy vs Io (V o =1.365V ) 100 90 80 70 Ef ficien cy[ %] 60 50 40 30 20 10 0 0 50 100 150 200 250 IO[ mA] 300 V BA T=3.6V 350 400 450 500 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 11/16 2011.03 - Rev.A BH6172GU ●Reference data(Output stability) 4 LDO1 Load Regulation 1.20V 3.5 3 2.5 OUT1 [V] OUT2 [V] 3.5 3 2.5 4 LDO2 Load Regulation 2.60V Technical Note 4 LDO3 Load Regulation 3.0V 3.5 3 2.5 OUT3 [V] 2 1.5 1 0.5 0 0 50 100 IO [mA] 150 200 2 1.5 1 0.5 0 0 50 100 IO [mA] 150 200 2 1.5 1 0.5 0 0 50 100 150 IO [mA] 200 250 300 4 LDO4 Load Regulation 1.80V 3.5 3 2.5 OUT4 [V] 2 1.5 1 0.5 0 0 100 200 IO [mA] 300 400 OUT5 [V] 4 LDO5 Load Regulation 3.30V 3.5 3 2.5 2 1.5 1 0.5 0 0 50 100 IO [mA] 150 200 ●Reference data(Input stability) 6 5.5 5 4.5 4 OUT1 [V] OUT2 [V] 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 VBAT [V] 4 4.5 5 5.5 6 VBAT LDO1 Line Regulation 1.20V 6 5.5 5 4.5 4 OUT3 [V] 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 VBAT [V] 4 4.5 5 5.5 6 VBAT LDO2 Line Regulation 2.60V 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 VBAT [V] 4 4.5 5 5.5 6 VBAT LDO3 Line Regulation 3.0V 6 5.5 5 4.5 4 OUT4 [V] OUT5 [V] 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 VBAT [V] 4 4.5 5 5.5 6 VBAT LDO4 Line Regulation 1.80V 6 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 VUSB [V] 4 4.5 5 5.5 6 VUSB LDO5 Line Regulation 3.30V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 12/16 2011.03 - Rev.A BH6172GU ●Reference data(Load transient response) LDO1 LDO2 Technical Note IO IO IO IO LDO1 LDO1 LDO2 LDO2 LDO3 LDO4 IO IO IO IO LDO3 LDO3 LDO4 LDO4 LDO5 IO IO LDO5 LDO5 ●Reference data(Rise time) LDO1 LDO2 EN_LD1 EN_LD2 LDO1 LDO2 LDO3 LDO4 EN_LD3 EN_LD4 LDO3 LDO4 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 13/16 2011.03 - Rev.A BH6172GU ●Reference data(VBAT line transient response) LDO1 LDO2 Technical Note LDO3 V BA T VBAT VBAT LDO1 LDO2 LDO3 LDO4 LDO5 VBA T VUSB LDO4 LDO5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 14/16 2011.03 - Rev.A BH6172GU Technical Note ●Notes for use (1) Absolute maximum ratings If applied voltage (VBAT, VADP, VUSB), operating temperature range (Topr), or other absolute maximum ratings are exceeded, there is a risk of damage. Since it is not possible to identify short, open, or other damage modes, if special modes in which absolute maximum ratings are exceeded are assumed, consider applying fuses or other physical safety measures. (2) Recommended operating range This is the range within which it is possible to obtain roughly the expected characteristics. For electrical characteristics, it is those that are guaranteed under the conditions for each parameter. Even when these are within the recommended operating range, voltage and temperature characteristics are indicated. (3) Reverse connection of power supply connector There is a risk of damaging the LSI by reverse connection of the power supply connector. For protection from reverse connection, take measures such as externally placing a diode between the power supply and the power supply pin of the LSI. (4) Power supply lines In the design of the board pattern, make power supply and GND line wiring low impedance. When doing so, although the digital power supply and analog power supply are the same potential, separate the digital power supply pattern and analog power supply pattern to deter digital noise from entering the analog power supply due to the common impedance of the wiring patterns. Similarly take pattern design into account for GND lines as well. Furthermore, for all power supply pins of the LSI, in conjunction with inserting capacitors between power supply and GND pins, when using electrolytic capacitors, determine constants upon adequately confirming that capacitance loss occurring at low temperatures is not a problem for various characteristics of the capacitors used. (5) GND voltage Make the potential of a GND pin such that it will be the lowest potential even if operating below that. In addition, confirm that there are no pins for which the potential becomes less than a GND by actually including transition phenomena. (6) Shorts between pins and misinstallation When installing in the set board, pay adequate attention to orientation and placement discrepancies of the LSI. If it is installed erroneously, there is a risk of LSI damage. There also is a risk of damage if it is shorted by a foreign substance getting between pins or between a pin and a power supply or GND. (7) Operation in strong magnetic fields Be careful when using the LSI in a strong magnetic field, since it may malfunction. (8) Inspection in set board When inspecting the LSI in the set board, since there is a risk of stress to the LSI when capacitors are connected to low impedance LSI pins, be sure to discharge for each process. Moreover, when getting it on and off of a jig in the inspection process, always connect it after turning off the power supply, perform the inspection, and remove it after turning off the power supply. Furthermore, as countermeasures against static electricity, use grounding in the assembly process and take appropriate care in transport and storage. (9) Input pins Parasitic elements inevitably are formed on an LSI structure due to potential relationships. Because parasitic elements operate, they give rise to interference with circuit operation and may be the cause of malfunctions as well as damage. Accordingly, take care not to apply a lower voltage than GND to an input pin or use the LSI in other ways such that parasitic elements operate. Moreover, do not apply a voltage to an input pin when the power supply voltage is not being applied to the LSI. Furthermore, when the power supply voltage is being applied, make each input pin a voltage less than the power supply voltage as well as within the guaranteed values of electrical characteristics. (10) Ground wiring pattern When there is a small signal GND and a large current GND, it is recommended that you separate the large current GND pattern and small signal GND pattern and provide single point grounding at the reference point of the set so that voltage variation due to resistance components of the pattern wiring and large currents do not cause the small signal GND voltage to change. Take care that the GND wiring pattern of externally attached components also does not change. (11) Externally attached capacitors When using ceramic capacitors for externally attached capacitors, determine constants upon taking into account a lowering of the rated capacitance due to DC bias and capacitance change due to factors such as temperature. (12) Thermal shutdown circuit (TSD) When the junction temperature becomes higher than a certain specific value, the thermal shutdown circuit operates and turns the switch OFF. The thermal shutdown circuit, which is aimed at isolating the LSI from thermal runaway as much as possible, is not aimed at the protection or guarantee of the LSI. Therefore, do not continuously use the LSI with this circuit operating or use the LSI assuming its operation. (13) Thermal design Perform thermal design in which there are adequate margins by taking into account the permissible dissipation (Pd) in actual states of use. (14) Rush Current Extra care must be taken on power coupling, power, ground line impedance, and PCB design while excess amount of rush current might instantly flow through the power line when powering-up a LSI which is equipped with several power supplies, depending on on/off sequence, and ramp delays. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 15/16 2011.03 - Rev.A BH6172GU ●Ordering part number Technical Note B H 6 Part No. 1 7 2 G U - E 2 Part No. Package GU: VCSP85H2 Packaging and forming specification E2: Embossed tape and reel VCSP85H2(BH6172GU) 1PIN MARK 2.60± 0.05 Tape Quantity Direction of feed S 0.06 S A 0.3± 0.05 Embossed carrier tape 3000pcs E2 The direction is the 1pin of product is at the upper left when you hold 2.60± 0.05 0.25± 0.1 1.0MAX ( reel on the left hand and you pull out the tape on the right hand ) 24- φ 0.3± 0.05 0.05 A B E D C B A 1 2 (φ0.15)INDEX POST B P=0.5 × 4 34 5 0.3± 0.05 P=0.5 × 4 1pin Direction of feed (Unit : mm) Reel ∗ Order quantity needs to be multiple of the minimum quantity. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 16/16 2011.03 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A