Datasheet
USB Type-C Power Delivery Controller
BM92A11MWV-Z
General Description
Key Specifications
BM92A11 is a full function USB Type-C Power Delivery
(PD) controller that supports USB Power Delivery using
base-band communication. It is compatible with USB
Type-C Specification and USB Power Delivery
specification.
BM92A11 includes support for the PD policy engine and
communicates with an Embedded Controller or the SoC
via host interface. It supports SOP, SOP’ and SOP’’
signaling, allowing it to communicate with cable marker
ICs, support alternate modes.
VBUS Voltage Range:
4.75V to 20V
Power Sink Voltage Range:
4.75V to 20V
Power Source Voltage Range:
4.75V to 5.5V
Power Consumption at Sleep Power: 0.4mW(Typ)
Operating Temperature Range: -30°C to +105°C
Package
W (Typ) x D (Typ) x H (Max)
5.00mm x 5.00mm x 1.00mm
UQFN40V5050A
Features
USB Type-C Specification compatible
USB PD Specification compatible (BMC-PHY)
Connected the required initial voltage is 12V
Request current depends on the far-end device
Start of automatic power receiving without Ext-MCU
Two channel power path control using N-channel
MOSFET drivers with back flow prevention
Type-C cable orientation detection
Built-in VCONN Switch and VCONN controller
Direct VBUS powered operation
Initial Role is UFP mode (Supports DFP/DRP mode)
Supports Dead Battery operation
SMBus Interface for Host Communication
Applications
Consumer Applications
Laptop PCs, Tablet PCs
Typical Application Circuit
Charger Power
VBUS
Power Supply
For Prov (5V)
Hi-side
Switch
GND
GND
GND
VSVR
(3.1V～5.5V)
GND
GND
GND
GND
CC2
VEX
SMDATA
GND
CC1
VSVR
S1_DRV_G2
S1_DRV_SRC
S1_DRV_G1
VCONN_IN
S2_DRV_G2
S2_DRV_SRC
S2_DRV_G1
VB
DSCHG
VCONN
VDDIO
(1.7V～5.5V)
VDDIO
SMCLK
VDDIO
CC1
GPIO0（VIN_EN)
CC2
GPIO1（ALERT#)
EC-I/F
GPO2/VDIV(BST_EN)
USB Type-C
Receptacle
BM92A11MWV-Z
UQFN40V5050A
XCLPOFF1
XCLPOFF2
GPO3/FB(HSSWEN)
GPIO7
GPIO6
GPIO5
GPIO4
VCCIN
DBGMODDT
VDDIO
CSENSEN
CSENSEP
VCCIN
LDO15ACAP
LDO28CAP
LDO15DCAP
GND
GND
GND
EPAD
DBGRSTCK
IDSEL/ATST1
VSTR/ATST2
XRST
VCCIN
GND
VCCIN
GND
GND
GND
GND
Figure A. Typical Application Circuit
〇Product structure : Silicon monolithic integrated circuit
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Contents
Contents ......................................................................................................................................................................................... 2
Notation ......................................................................................................................................................................................... 3
Reference ...................................................................................................................................................................................... 3
1.
Pin Configuration.................................................................................................................................................................. 4
2.
Pin Description ..................................................................................................................................................................... 5
3.
Block Diagram ...................................................................................................................................................................... 7
4.
Electrical Characteristics ...................................................................................................................................................... 8
4.1. Absolute Maximum Ratings ................................................................................................................................................. 8
(Note 4)
4.2. Thermal Resistance
..................................................................................................................................................... 8
4.3. Recommended Operating Conditions .................................................................................................................................. 9
4.4. Internal Memory Cell Characteristics ................................................................................................................................... 9
4.5. Circuit Power Characteristics ............................................................................................................................................... 9
4.6. Digital Pin DC Characteristics ............................................................................................................................................ 10
4.7. Power Supply Management ............................................................................................................................................... 11
4.7.1. Outline ............................................................................................................................................................................ 11
4.7.2. Electrical Characteristics ................................................................................................................................................ 12
4.8. CC_PHY ............................................................................................................................................................................ 13
4.8.1. Outline ............................................................................................................................................................................ 13
4.8.2. Electrical Characteristics ................................................................................................................................................ 15
4.9. Voltage Detection ............................................................................................................................................................... 16
4.9.1. Outline ............................................................................................................................................................................ 16
4.9.2. Electrical Characteristics ................................................................................................................................................ 16
4.10.
VBUS Discharge............................................................................................................................................................. 17
4.10.1.
Outline ........................................................................................................................................................................ 17
4.10.2.
Electrical Characteristics ............................................................................................................................................. 17
4.11.
Power FET Gate Driver (SINK & SOURCE) ................................................................................................................... 18
4.11.1.
Outline ........................................................................................................................................................................ 18
4.11.2.
Electrical Characteristics ............................................................................................................................................. 18
4.12.
Power On Sequence ...................................................................................................................................................... 19
4.12.1.
Reset Timing ............................................................................................................................................................... 20
4.13.
Power Off Sequence ...................................................................................................................................................... 21
4.14.
I/O Equivalence Circuit ................................................................................................................................................... 22
5.
Application Example........................................................................................................................................................... 26
5.1. Selection of Components Externally connected ................................................................................................................. 26
6.
Initial values of BM92A11 ................................................................................................................................................... 27
7.
Operational Notes .............................................................................................................................................................. 29
8.
Ordering Information .......................................................................................................................................................... 31
9.
Marking Diagrams .............................................................................................................................................................. 31
10.
Physical Dimension Tape and Reel Information ................................................................................................................. 32
11.
Revision History ................................................................................................................................................................. 33
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Notation
Category
Notation
Description
Unit
V
Volt (Unit of voltage)
A
Ampere (Unit of current)
Ω, Ohm
Ohm (Unit of resistance)
F
Farad (Unit of capacitance)
deg., degree
degree Celsius (Unit of Temperature)
Hz
Hertz (Unit of frequency)
s (lower case)
second (Unit of time)
min
minute (Unit of time)
b, bit
bit (Unit of digital data)
B, byte
1 byte = 8 bits
M, mega-, mebi-
2
M, mega-, million-
10 = 1,000,000
Unit prefix
K, kilo-, kibik, kilo-
20
= 1,048,576
(used with “bit” or “byte”)
6
2
10
= 1,024
3
10 = 1,000
(used with “Ω” or “Hz”)
(used with “bit” or “byte”)
(used with “Ω” or “Hz”)
m, milli-
10
-3
μ, micro-
10
-6
n, nano-
10
-9
p, pico-
10
-12
xxh, xxH
Hexadecimal number.
“x”: any alphanumeric of 0 to 9 or A to F.
xxb
Binary number; “b” may be omitted.
“x”: a number, 0 or 1
“_” is used as a nibble (4-bit) delimiter.
(eg. “0011_0101b” = “35h”)
Address
#xxh
Address in a hexadecimal number.
“x”: any alphanumeric of 0 to 9 or A to F.
Data
bit[n]
n-th single bit in the multi-bit data.
bit[n:m]
Bit range from bit[n] to bit[m].
“H”, High
High level (over VIH or VOH) of logic signal.
“L”, Low
Low level (under VIL or VOL) of logic signal.
“Z”, “Hi-Z”
High impedance state of 3-state signal.
Numeric value
Signal level
Reference
Name
Reference Document
Release Date
Publisher
USB Type-C
“USB Type-C Specification Release 1.1”
3.Apr.2015
USB.org
USB PD
“Power Delivery Specification Revision2.0 Version1.1”
7.May.2015
USB.org
SMBus
“System Management Bus (SMBus) Specification Version 2.0”
3.Aug.2000
System Management
Implementers Forum
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GPO2/VDIV(BST_EN)
VEX
GND
S1_DRV_G2
S1_DRV_SRC
S1_DRV_G1
S2_DRV_G2
S2_DRV_SRC
S2_DRV_G1
Pin Configuration
30 29
28
27
26
25
24 23
22
21
GPO3/FB(HSSWEN)
CSENSEN
31
20
SMCLK
CSENSEP
32
19
SMDATA
XCLPOFF1
33
18
VDDIO
XCLPOFF2
34
17
GPIO1(ALERT#)
CC1
35
16
GPIO0(VIN_EN)
VCONN_IN
36
15
DBGMODDT
CC2
37
14
DBGRSTCK
LDO15DCAP
38
13
GPIO7
LDO28CAP
39
12
GPIO6
LDO15ACAP
40
11
GPIO5
BM92A11MWV-Z
UQFN40V5050A
TOP View
6
7
8
9
10
VB
GPIO4
IDSEL/ATST1
5
GND
VSTR/ATST2
4
DSCHG
3
VSVR
2
VCCIN
1
GND
(EPAD)
XRST
1.
Figure 1-1 Pin configuration
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2.
Pin Description
Table 2-1 Pin Description
PKG
PIN#
Pin Name
BLOCK
I/O
Type
I
GND
Digital
I/O Level
Description
1
GND
GND
2
VSTR/ATST2
TEST/Debug
IO
Analog
3
IDSEL/ATST1
TEST/Debug
I
Analog
VCCIN
4
XRST
Interface
I
Digital
VCCIN
5
VCCIN
USB-PD
O
Analog
6
VSVR
POWER
I
Power
7
DSCHG
Interface
IO
Analog
8
GND
GND
I
GND
9
VB
POWER
I
Power
Power Source from VBUS
10
GPIO4
Interface
I
Digital
Mode fixation (Fix: L)
11
GPIO5
Interface
I
Digital
NC pin
12
GPIO6
Interface
I
Digital
NC pin
13
GPIO7
Interface
I
Digital
NC pin
14
DBGRSTCK
TEST
IO
Digital
VDDIO
Test for logic
15
TEST
IO
Digital
VDDIO
Test for logic
I
Digital
VDDIO
VIN_EN signal
Digital
VDDIO
Alert signal
18
DBGMODDT
GPIO0
(VIN_EN)
GPIO1
(ALERT#)
VDDIO
POWER
I
Power
19
SMDATA
Interface
IO
Digital
VDDIO
SMBus Data
20
SMCLK
Interface
I
Digital
VDDIO
SMBus Clock
21
S2_DRV_G1
FET Gate
Control
O
Analog
Power Path FET Gate Control
SPDSNK_G1
22
S2_DRV_SRC
FET Gate
Control
I
Analog
Power Path FET BG/SRC
Voltage
SPDSNK_SRC
23
S2_DRV_G2
FET Gate
Control
O
Analog
Power Path FET Gate Control
SPDSNK_G2
24
S1_DRV_G1
FET Gate
Control
O
Analog
Power Path FET Gate Control
SPDSRC_G1
25
S1_DRV_SRC
FET Gate
Control
I
Analog
Power Path FET BG/SRC
Voltage
SPDSRC_SRC
26
S1_DRV_G2
FET Gate
Control
O
Analog
Power Path FET Gate Control
SPDSRC_G2
16
17
Interface
Interface
(Note 1)
O
Ground
Analog TEST/ Debug Pin2
SMBus ID (device address)
selection “H”:1Ah, “L”:18h
/Debug Pin1
Digital block Reset
Internal Power supply
(For internal use, need to
connect capacitor to GND
5V SVR INPUT and
SPDSRC_FET_SRC voltage
Discharge NMOS Drain
Ground
Interface Voltage
(Note 1) N-ch Open Drain
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PKG
PIN#
Pin Name
BLOCK
27
GND
GND
I
GND
28
VEX
GPO2/VDIV
(BST_EN)
GPO3/FB
(HSSWEN)
POWER
I
Power
Interface
O
Digital
VCCIN
Boost Enable signal
Interface
O
Digital
VCCIN
Hi-side Switch Enable signal
29
30
I/O
Type
Digital
I/O Level
Description
Ground
Extension Power Input
Pin 29,30 Configuration
31
CSENSEN
Interface
I
Analog
VCCIN
32
CSENSEP
Interface
I
Analog
VCCIN
33
XCLPOFF1
CCPHY
I
Analog
VCCIN
34
XCLPOFF2
CCPHY
I
Analog
VCCIN
35
CC1
CCPHY
IO
Analog
36
VCONN_IN
CCPHY
I
Analog
37
CC2
CCPHY
IO
Analog
38
LDO15DCAP
POWER
O
Analog
39
LDO28CAP
POWER
O
Analog
40
LDO15ACAP
POWER
O
Analog
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(Pin31,Pin32)=(H,H):GPO
mode
Pin 29,30 Configuration
(Pin31,Pin32)=(H,H):GPO
mode
Disable Clamper of CC1
L:Dead-battery not support
Open: Dead-battery support
Disable Clamper of CC2
L:Dead-battery not support
Open: Dead-battery support
Configuration channel 1 for
Type-C
Input power for VCONN
Configuration channel 2 for
Type-C
Internal LDO 1.5V for Digital
Need Capacitor
Internal LDO 2.8V for Analog
Need Capacitor
Internal LDO 1.5V for Analog
Need Capacitor
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BM92A11MWV-Z
3.
Block Diagram
BM92A11 is a full function USB Type-C PD controller that supports USB Power Delivery using base-band communication. It
is compatible with USB Type-C Specification and USB Power Delivery Specification
S2_DRV_G1
S2_DRV_SRC
S2_DRV_G2
S1_DRV_G1
S1_DRV_SRC
S1_DRV_G2
GND
VEX
GPO2/VDIV
(BST_EN)
GPO3/FB
(HSSWEN)
BM92A11 includes the following functional blocks: Type-C Physical Layer (base-band PHY), BMC encoder / decoder,
USB-PD Protocol engine, two N-ch MOSFET switch drivers to control each, OVP, Discharge FET and SMBus interface for
communicating with the host controller. It requires an external embedded controller that includes Device Policy Manager
and GPIOs for USB Type-C PD operation. BM92A11 is able to operate independently in a dead battery condition where the
embedded controller is not operational. BM92A11 includes an EEPROM, enabling code updates via the SMBus interface
during prototyping phase.
CSENSEN
SMCLK
NchFET Switch
Driver
CSENSEP
SMDATA
XCLPOFF1
SMBus
XCLPOFF2
Type-C
Physical Layer
Device Policy
Manager
BB PD
Physical Layer
Protocol
GPIO1
(ALERT#)
GPIO0
(VIN_EN)
CC1
VCONN_IN
DBGMODDT
CC2
SPI
I/F
LDO15DCAP
EEPROM
LDO28CAP
VDDIO
DBGRSTCK
GPIO7
GPIO6
Type-C USBPD
GPIO4
VB
GND
DSCHG
VSVR
VCCIN
XRST
IDSEL/ATST1
VSTR/ATST2
GPIO5
GND
LDO15ACAP
Figure 3-1 Block Diagram
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4.
Electrical Characteristics
4.1.
Absolute Maximum Ratings
Table 4-1 Absolute Maximum Ratings
（Ta=25°C）
Parameter
Maximum Supply Voltage1
(VB, VEX, DSCHG, S2_DRV_G1,
S2_DRV_G2,S2_DRV_SRC,
S1_DRV_G1,S1_DRV_SRC,
S1_DRV_G2 )
Maximum Supply Voltage2
(VDDIO, VSVR, DBGRSTCK,
DBGMODDT,
GPIO0, GPIO1, SMDATA, SMCLK, XRST,
VCONN_IN, VSTR/ATST2, IDSEL/ATST1,
VCCIN, GPIO4, GPIO5, GPIO6, GPIO7,
GPO2/VDIV, GPO3/FB, CSENSEN,
CSENSEP, XCLPOFF1, XCLPOFF2, CC1,
CC2, LDO28CAP)
Maximum Supply Voltage3
(LDO15DCAP, LDO15ACAP)
Maximum different Voltage
(S2_DRV_G1 - S2_DRV_SRC,
S2_DRV_G2 - S2_DRV_SRC,
S1_DRV_G1 - S1_DRV_SRC,
S1_DRV_G2 - S1_DRV_SRC)
Storage Temperature Range
Symbol
Rating
Unit
Conditions
VIN1
-0.3 to +28
V
(Note 2)
(Note 3)
VIN2
-0.3 to +6.5
V
VIN3
-0.3 to +2.1
V
Vdiff
-0.3 to +6.5
V
Tstg
-55 to +125
°C
(Note 3)
(Note 2)When the DSCHG pin is applied voltage should by way of resistance more than 1kΩ.
(Note 3)The different voltage between S*DRV_G* and S*DRV_SRC is defined “Symbol Vdiff”. S*_DRV_G*=S*_DRV_SRC+6.0V (typ)
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open
circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is
operated over the absolute maximum ratings.
4.2.
Thermal Resistance
(Note 4)
Table 4-2 Thermal Resistance
Parameter
Symbol
Thermal Resistance (Typ)
1s
(Note 6)
(Note 7)
2s2p
Unit
UQFN40V5050A
Junction to Ambient
Junction to Top Characterization Parameter
(Note 5)
θJA
125.0
43.0
°C/W
ΨJT
21
14
°C/W
(Note 4)Based on JESD51-2A(Still-Air)
(Note 5)The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside
surface of the component package.
(Note 6)Using a PCB board based on JESD51-3.
Layer Number of
Measurement Board
Single
Material
Board Size
FR-4
114.3mm x 76.2mm x 1.57mmt
Top
Copper Pattern
Thickness
Footprints and Traces
70μm
(Note 7)Using a PCB board based on JESD51-5, 7.
Layer Number of
Measurement Board
4 Layers
Thermal Via(Note 8)
Material
Board Size
FR-4
114.3mm x 76.2mm x 1.6mmt
Top
2 Internal Layers
Pitch
1.20mm
Diameter
Φ0.30mm
Bottom
Copper Pattern
Thickness
Copper Pattern
Thickness
Copper Pattern
Thickness
Footprints and Traces
70μm
74.2mm x 74.2mm
35μm
74.2mm x 74.2mm
70μm
(Note 8) This thermal via connects with the copper pattern of all layers.
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4.3.
Recommended Operating Conditions
Table 4-3 Recommended Operating Conditions
(Ta=25C)
Item
Symbol
Range
Unit
VB, VEX
4.75 to 20
V
VSVR Voltage
VSVR
3.1 to 5.5
V
VDDIO Voltage
VDDIO
1.7 to 5.5
V
VCONN_IN Input Voltage
VCONN
4.75 to 5.5
V
Topr
-30 to +105
°C
VB, VEX Voltage
Operating Temperature Range
4.4.
Conditions
Internal Memory Cell Characteristics
Table 4-4 Internal Memory Cell Characteristics
(Ta=25C, VB=VEX=4.75 to 20V, VSVR=3.1 to 5.5V)
Limit
Item
Data rewriting number
Data retention life
(Note 9)
(Note 9)
Unit
Conditions
Min
Typ
Max
1000
-
-
time
Ta≦25°C
100
-
-
time
Ta≦105°C
20
-
-
year
Ta≦25°C
10
-
-
year
Ta≦105°C
(Note 9)Not 100％ TESTED
Caution: Customer is permitted to rewrite EEPROM on BM92A11 only in case of being provided technical support from ROHM.
4.5.
Circuit Power Characteristics
Table 4-5 Common Characteristics
Electrical Characteristics (Ta=25C)
Item
Symbol
Limit
Unit
Conditions
-
mW
VSVR=3.3V, VB=open,
VEX=open, VDDIO=3.3V
-
mW
VSVR=3.3V, VB=open,
VEX=open, VDDIO=3.3V
Min
Typ
Max
PST
-
0.4
POP
-
3.5
[Circuit Power]
Sleep power
(Note 10)
Standby power
(Note11)
(Note 10) Sleep power: Power consumption at unattached plug.
(Note 11) Standby power: Power consumption at attached plug.
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4.6.
Digital Pin DC Characteristics
Table 4-6 Digital Pin DC Characteristics
Electrical Characteristics (Ta=25C, VSVR=3.3V, VB=open, VEX=open, VDDIO=3.3V, VCCIN=VSVR)
Item
Symbol
Limit
Min
Typ
Digital characteristics (VDDIO Power:GPIO0, GPIO1, SMDATA, SMCLK)
0.8×
Input "H" level
VIH1
VDDIO
Max
Unit
Comment
Input "L" level
VIL1
-0.3
-
Input leak current
IIC1
-5
0
VDDIO+
0.3
0.2×
VDDIO
5
VOH1
0.7×
VDDIO
-
-
V
Source=1mA
VOL
SMDATA
-
-
0.4
V
Sink=350μA Max
VOL1
-
-
0.3
V
Sink=1mA
Output Voltage when “H”
SMDATA pin "L" level voltage
(SMDATA)
Output Voltage when “L”
(GPIO0, GPIO1)
V
V
μA
Power: VDDIO
Digital characteristics ( VCCIN Power: XRST, GPIO2, GPIO3, GPIO4, GPIO5, GPIO6, GPIO7)
Input "H" level
VIH2
0.8×
VCCIN
-
VCCIN+
0.3
V
Input "L" level
VIL2
-0.3
-
0.2×
VCCIN
V
Input leak current
IIC2
-5
0
5
μA
Power: VCCIN
Output Voltage when “H”
(GPIOs)
VOH2
0.7×
VCCIN
-
-
V
Source=1mA
Output Voltage when “L”
(GPIOs)
VOL2
-
-
0.3
V
Sink=1mA
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4.7.
Power Supply Management
4.7.1.
Outline
BM92A11 has a power selector. It select the lowest power supply voltage from VSVR, VEX, or VB for low power
consumption. Internal Power Supply (VCCIN) gives priority in order of VSVR, VEX, and VB. VCCIN supplied from the
power selector is used to BM92A11 main power source. LDOs (for internal only) are supplied from VCCIN, and output each
internal supply voltage.
Each power supply input have UVLO and OVLO. And POR (power on reset) signal is generated from detection of
LDO28OK, LDO15DOK, LDO15AOK, and VCCIN.
UVLO
/OVLO
signal
UVLO/OVLO
Detection
Power Selector
with regulator
VSVR
VEX
VB
Internal
Power
Supply
VCCIN
POR
signal
POR
LDO28OK
LDO
LDO28CAP
LDO15DOK
LDO
LDO15DCAP
LDO15AOK
LDO
LDO15ACAP
Internal
Power
Supply
VDDIO
detection
signal
VDDIO
DET
5 to 20V
VBUS
0V
VEX
0V
5 to 20V
5V
VSVR
0V
VCCIN
0V
VBUS
VEX
VSVR
Figure 4-1 Power Supply Management Block Diagram and Timing Chart
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4.7.2.
Electrical Characteristics
Table 4-7 Power Supply Management Characteristics
Item
Symbol
Limit
Min
Typ
Max
[Analog characteristics]
Unless otherwise specified
Ta=25°C, GND=0V, CVCCIN=4.7μF(Ceramic), CLDO28=CLDO15D=CLDO15A =1μF(Ceramic)
Input Analog Pins: VSVR, VEX, VB
UVLO rising threshold voltage 1
VUVLO1H
2.8
UVLO rising threshold voltage 2
VUVLO2H
3.5
UVLO falling threshold voltage
VUVLOL
2.7
OVLO rising threshold voltage
VOVLO5
6.4
OVLO rising threshold voltage
VOVLO20
28
OVLO hysteresis voltage 1
VOV5HYS
240
OVLO hysteresis voltage 2
VOV20HYS
920
Power ON reset threshold voltage
VPOR
2.6
VDDIO detection voltage
VDB
1.7
LDO28CAP output voltage
V28
2.8
LDO15DCAP output voltage
V15D
1.5
LDO15ACAP output voltage
V15A
1.5
-
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Unit
Comment
V
V
V
V
V
mV
mV
V
V
V
V
V
VSVR
VEX, VB
VSVR, VEX, VB
VSVR
VEX, VB
VSVR
VEX, VB
VCCIN
For Dead Battery Operation
No Load, VSVR=5V
No Load, VSVR=5V
No Load, VSVR=5V
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4.8.
CC_PHY
4.8.1.
Outline
CC_PHY has below functions of USB Type-C. (Refer to USB Type-C Spec)
- Defining Port Mode
> DFP Mode Condition
> UFP Mode Condition
> DRP Mode Condition
- DFP-to-UFP Attach / Detach Detection
- Plug Orientation / Cable Twist Detection
- USB Type-C VBUS Voltage Detection and Usage
- VCONN (Supply for SOP’) Control
- Base-Band Power Delivery Communication (BBPD communication)
VBUS
MCU
VCONNSW
VCONN_IN
VBUS_MONI
MCU
CC1
BB_PHY
CC2
Receptacle
Control
Logic
XCLPOFF１
CC DET
UFP_CLAMP
Rd
GND
Rd
XCLPOFF2
GND
PORT_CONT
Figure 4-2 CC_PHY Block Diagram
[PORT_CONT]
This block chose the port mode according to the setting from MCU.
(DFP)
Variable current source is connected to CC terminal. These currents of each mode are Default Current, Medium Current
and High Current.
(UFP)
Pull-down resistor is connected to CC terminal.
(DRP)
Changing DFP and UFP is repeated frequently.
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[CC_DET]
CC_DET has functions of “Attach / Detach Detection”, “Plug Orientation / Cable Twist Detection”, “Discovery and detect
extension mode” and “USB Type-C VBUS Current Detection”.
Attach / Detach is detected with monitoring voltage of CC terminal. When the voltage of CC terminal become under a
threshold voltage at DFP, attach is detected. Oppositely, when the voltage of CC terminal become over a threshold
voltage, detach is detected. When the voltage of CC terminal become over a threshold voltage at UFP, attach is detected.
Plug orientation and cable twist is detected from the relationship of two CC terminals. Because only one wire is
connected to Rd, the difference between two CC terminals is generated.
UFP can detect the maximum current of the power source by monitoring the voltage of CC terminal.
[UFP_CLAMP]
Clamp is used for UFP emulation at dead-battery condition.
[VBUS_MONI]
UFP detect Attach / Detach by existence of VBUS voltage. VBUSDET detects Attach when VBUS voltage over the
threshold voltage. And it detects Detach when VBUS under the threshold voltage.
[VCONNSW]
VCONNSW is the power switch for VCONN source. It has OCP function.
[BB_PHY]
If Type-C controller supports BBPD, CC terminal can output BBPD communication signal. (Refer to BB_PHY)
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4.8.2.
Electrical Characteristics
Table 4-8 CC_PHY Characteristics
Item
Symbol
Limit
Min
Typ
[PORT_CONT characteristics]
Unless otherwise specified
Ta=25°C, VSVR=VB=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V,
=1μF(Ceramic)
Input Analog Pins: CC1, CC2
Default current
CCPUP1
64
80
Medium current
CCPUP2
166
180
High current
CCPUP3
304
330
Pull down resistor
CCPDN
4.6
5.1
[UFP_CLAMP characteristics]
Unless otherwise specified
Ta=25°C, VSVR=VB=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V,
=1μF(Ceramic)
Input Analog Pins: CC1, CC2
CCx terminal input impedance
CCZin
126
CCx clamp voltage
CCCLP
0.7
[VBUS MONI]
Unless otherwise specified
Ta=25°C, VSVR=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V,
=1μF(Ceramic)
Input Analog Pins: VB
VBUS presence detection level
CCVBDET
3.42
[VCONNSW]
Unless otherwise specified
Ta=25°C, VSVR=VB=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V,
=1μF(Ceramic)
Input Analog Pins: CC1, CC2, VCONN_IN
VCONN_IN to CCx resistance
CCVCR
Overcurrent protection level
CCVCOCP
1.1
-
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Max
Unit
Comment
CVCCIN=4.7μF(Ceramic), CLDO28=CLDO15D=CLDO15A
96
194
356
5.6
μA
μA
μA
kΩ
CVCCIN=4.7μF(Ceramic), CLDO28=CLDO15D=CLDO15A
1.3
kΩ
V
Iin=64 to 356μA
CVCCIN=4.7μF(Ceramic),
-
CLDO28=CLDO15D=CLDO15A
V
CVCCIN=4.7μF(Ceramic), CLDO28=CLDO15D=CLDO15A
500
-
mΩ
A
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4.9.
Voltage Detection
4.9.1.
Outline
VDET Block detects the voltage level of VB. It can detect follow conditions;
-OVP (over voltage protection) detection
-VBUS voltage drop detection
VBUS
+
OVP
detection
+
VBUS voltage drop
detection
-
Variable Reference
Voltage
Figure 4-3 Voltage Detection Block Diagram
4.9.2.
Electrical Characteristics
Table 4-9 Voltage Detection characteristics
Item
Symbol
Limit
Min
Typ
[VDET characteristics]
Unless otherwise specified
Ta=25°C, VSVR=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V,
=1μF(Ceramic), Vnom=PD negotiation Voltage
Input Analog Pins: VB
Over voltage protection detection
OVP
17
20
rate
VBUS voltage drop detection rate
VB_DROP
-27
-25
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Max
Unit
Comment
CVCCIN=4.7μF(Ceramic),
CLDO28=CLDO15D=CLDO15A
23
%
Standard voltage=Vnom
-23
%
Standard voltage=Vnom
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4.10. VBUS Discharge
4.10.1. Outline
NMOS switch is prepared for VBUS discharging.
DSCHG
Discharge
Resistor
Discharge
Control
GND
Figure 4-4 VBUS Discharge Block Diagram
4.10.2. Electrical Characteristics
Table 4-10 VBUS Discharge Characteristics
Item
Symbol
Limit
Min
Typ
Max
Unit
Comment
[Discharge characteristics]
Unless otherwise specified
Ta=25°C, VSVR=VB=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V, CVCCIN=4.7μF(Ceramic), CLDO28=CLDO15D=CLDO15A
=1μF(Ceramic)
Input Analog Pins: DSCHG
MOSFET Switch ON Resistance
RDSCHG
25
Ω
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4.11. Power FET Gate Driver (SINK & SOURCE)
4.11.1. Outline
OUT
S2_DRV_G2
OUT
IN IN
Charge
pump
IN IN
S2_DRV_SRC
S2_DRV_G1
S1_DRV_G2
OUT
Charge
pump
Charge
pump
OUT
Charge
pump
S1_DRV_G1
S1_DRV_SRC
FET Gate Driver is the NMOS switch driver for power line switch.
- External Nch-FET gate control: S1, S2
Figure 4-5 Power FET Gate Driver Block Diagram
4.11.2. Electrical Characteristics
Table 4-11 Power FET Gate Driver Characteristics
Item
Symbol
Limit
Min
Typ
Max
Unit
Comment
[Discharge characteristics]
Unless otherwise specified
Ta=25°C, VSVR=VB=5V, VCONN_IN=5V, VDDIO=3.3V, GND=0V, CVCCIN=4.7μF(Ceramic), CLDO28=CLDO15D=CLDO15A
=1μF(Ceramic)
Input Analog Pins: S1_DRV_SRC, S2_DRV_SRC=0V
Output Analog Pins: S1_DRV_G1, S1_DRV_G2, S2_DRV_G1, S2_DRV_G2
S1_DRV_G1 – S1_DRV_SRC
FET control voltage between gate
S1_DRV_G2 – S1_DRV_SRC
VGS
6.0
V
and source
S2_DRV_G1 – S2_DRV_SRC
S2_DRV_G2 – S2_DRV_SRC
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4.12.
Power On Sequence
(1)Normal Operation (Non Dead Battery Operation)
3.1V to 5.5V
VSVR
0V
1.7V to 5.5V
VDDIO
0V
5V
VB
0V
Status
Normal
Operation
(Non dead battery )
Firmware
download
Shutdown
Firmware
download
(max 230ms)
SMBus
access
SMBus can
operate
SMBus can’t
operate
(2)Dead Battery Operation
3.1V to 5.5V
VSVR
0V
1.7V to 5.5V
VDDIO
0V
5V
VB
Status
0V
Firmware
download
(max 230ms)
Shutdown
SMBus
access
Firmware
download
Dead battery
operation
SMBus can’t
operate
Normal
Operation
(Non dead battery )
SMBus can
operate
Figure 4-6 Power On Sequence
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4.12.1. Reset Timing
Please input “L” level more than
100us when need reset.
T1
T2
XRST
SMBus
access
SMBus can operate
SMBus can operate
SMBus can’t operate
Figure 4-7 Reset Timing Chart
Table 4-12 Reset Timing Characteristics
Item
Reset Timing
XRST Minimum Pulse
SMBus access Start after XRST
release
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Symbol
Limit
Unit
Min
Typ
Max
T1
100
-
-
μs
T2
230
-
-
ms
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Comment
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4.13.
Power Off Sequence
3.1V to 5.5V
VSVR
Status
SMBus
access
0V
Normal
Operation
(Non dead battery )
SMBus can
operate
Shutdown
SMBus can’t
operate
Figure 4-8 Power Off Sequence
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4.14.
I/O Equivalence Circuit
PIN
No.
5
6
9
28
PIN Name
VCCIN
VSVR
VB
VEX
Equivalent circuit diagram
VB
Pin
VEX
Pin
Power
Selector
VSVR
Pin
VCCIN
Internal
Circuit
Pin
7
DSCHG
Pin
16
17
15
14
GPIO0(VIN_EN)
GPIO1(ALERT#)
DBGMODDT
DBGRSTCK
10
11
12
13
GPIO4(UPSCS)
GPIO5(UPSDIN)
GPIO6(UPSDO)
GPIO7(UPSCLK)
29
GPO2_VDIV
VCCIN
VDDIO
VCCIN
VDDIO
VDDIO
Pin
GPIO0
GPIO1
DBGMODDT
DBGRSTCK
VCCIN
VCCIN
VCCIN
Pin
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Pin
GPIO4
GPIO5
GPIO6
GPIO7
VCCIN
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PIN
No.
30
PIN Name
Equivalent circuit diagram
GPO3_FB
VCCIN VCCIN
VCCIN
Pin
18
VDDIO
Pin
32
31
CSENSEP
CSENSEN
I/O Interface
Circuit
VCCIN
Pin
19
21
SMDATA
SMCLK
VDDIO
Pin
32
22
23
24
25
26
S2_DRV_G1
S2_DRV_SRC
S2_DRV_G2
S1_DRV_G1
S1_DRV_SRC
S1_DRV_G2
Pin
Sx_DRV_G1
Sx_DRV_G2
Sx_DRV_SRC
Pin
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PIN
No.
33
34
35
36
37
PIN Name
XCLPOFF1
XCLPOFF2
CC1
VCONN_IN
CC2
Equivalent circuit diagram
Pin
VCONN_IN
Pin
Pin
CC2
CC1
Pin
Pin
XCLPOFF2
XCLPOFF1
4
XRST
VCCIN
VCCIN
Pin
38
40
LDO15DCAP
LDO15ACAP
VCCIN
VCCIN
Pin
Internal
Circuit
39
LDO28CAP
VCCIN
Pin
Internal
Circuit
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PIN
No.
2
PIN Name
Equivalent circuit diagram
VSTR/ATST2
VCCIN
Pin
3
IDSEL/ATST1
VCCIN
Pin
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5.
Application Example
Q1
Q2
Charger Power
VBUS
10μF
Q3
Q4
Power Supply
For Prov (5V)
Hi-side
Switch
GND
GND
1μF
1kΩ
0.01
μF
1μF
GND
1μF
GND
VSVR
(3.1V～5.5V)
GND
1μF
1μF
GND
GND
VSVR
VEX
S1_DRV_G2
S1_DRV_SRC
S1_DRV_G1
S2_DRV_G2
VCONN_IN
S2_DRV_SRC
S2_DRV_G1
VB
DSCHG
D1
VCONN
VDDIO
(1.7V～5.5V)
VDDIO
10 10 100 100 100
kΩ kΩ kΩ kΩ kΩ
SMDATA
GND
SMCLK
1μF
VDDIO
CC1
CC1
CC2
CC2
GPIO0（VIN_EN)
EC-I/F
GPIO1（ALERT#)
GPO2/VDIV(BST_EN)
USB Type-C
Receptacle
BM92A11MWV-Z
UQFN40V5050A
XCLPOFF1
XCLPOFF2
GPO3/FB(HSSWEN)
GPIO7
GPIO6
GPIO5
GPIO4
VCCIN
DBGMODDT
VDDIO
CSENSEN
CSENSEP
VCCIN
LDO15ACAP
LDO28CAP
LDO15DCAP
GND
GND
GND
EPAD
DBGRSTCK
100
kΩ
IDSEL/ATST1
VSTR/ATST2
XRST
0.01μF
VCCIN
100
kΩ
100
kΩ
GND
100 100
kΩ kΩ
100 100 100 100 100
kΩ kΩ kΩ kΩ kΩ
VCCIN
CLDO15D
GND
CLDO28
CLDO15A
CVCCIN
GND
GND
GND
Figure 5-1 Application Example
5.1.
Selection of Components Externally connected
Table 5-1 Selection of Components Externally Connected
Item
(Note 12)
VCCIN Capacitance
(Note 12)
LDO15ACAP Capacitance
(Note 12)
LDO15DCAP Capacitance
(Note 12)
LDO28CAP Capacitance
Q1,Q2,Q3,Q4
Gate-Source Capacitance
Symbol
Limit
Unit
Min
Typ
Max
CVCCIN
CLDO15A
CLDO15D
CLDO28
0.60
0.47
0.47
0.47
4.7
1.0
1.0
1.0
10
2.2
2.2
2.2
μF
μF
μF
μF
CQx_gs
220p
-
0.5μ
F
Comment
(Note 12) Please set the capacity of the condenser not to be less than the minimum in consideration of temperature properties, DC bias properties.
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6.
Initial values of BM92A11
This section shows the initial values of BM92A11
Table 6-1
Initial values of BM92A11
Code
Command
Protocols
02h
03h
04h
05h
06h
07h
08h
17h
19h
ALERT# Status
Status1
Status2
Command
Controller Configuration 1
Device Capability
PDOs Src Cons
Controller Configuration 2
DisplayPort Alert Enable
Vendor Configuration
(Vendor specified)
Read Word
Read Word
Read Word
Write Word
Read/Write Word
Read Word
Read Block
Read/Write Word
Read/Write Word
Data
size
2
2
2
2
2
2
28
2
2
Read/Write Word
2
20h
AutoNgtSnk Info Non-Battery
Read/Write Block
4
23h
AutoNgtSnk Info Battery
Read/Write Block
4
26h
27h
28h
2Bh
2Eh
2Fh
30h
System Configuration 1
System Configuration 2
Current PDO
Current RDO
ALERT# Enable
System Configuration 3
Set RDO
Read/Write Word
Read/Write Word
Read Block
Read Block
Read/Write Word
Read/write Word
Read/Write Block
2
2
4
4
4
2
4
33h
PDOs Snk Cons
Read/Write Block
16
3Ch
PDOs Src Prov
Read/Write Block
28
Read Word
2
0101h
Read Word
2
135Fh
Read Word
Read Word
Read Word
2
2
2
04B5h
04B1h
4002h
(00h) *1
All ‘0’
(00h) *1
All ‘0’
1Ah
4Dh
4Eh
4Fh
Firmware Type
(Vendor specific)
Firmware Revision
(Vendor Specific)
Manufacturer ID
Device ID
Revision ID
50h
Incoming VDM
Write Block
28
60h
Outgoing VDM
Read Block
28
4Bh
4Ch
Initial Values
0000h
0000h
0000h
0000h
CCC0h
00A6h
All ‘0’
0000h
0000h
0000h
(04h) *1
0F03C3FFh
(00h) *1
00000000h
8549h
0046h
0000h
0000h
FFFFh
A400h
0000h
(08h) *1
1401900Ah
0003C000h
Others are ‘0’
(00h) *1
All ‘0’
Note *1: This value is a byte count in the Read Block of SMBus protocol.
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Table 6-2
PDOs Snk Cons 1 Details
Type
Dual-Role Power
Higher Capability
Externally Powered
USB Communications Capable
Data Role Swap
Voltage in 50mV units
Maximum Current in 10mA units
PDOs Snk Cons Details of BM92A11
00b (Fixed)
0b
1b
0b
1b
0b
0001100100b (5V)
0000001010b (0.1A)
PDOs Snk Cons 2 Details
Type
00b (Fixed)
Voltage in 50mV units
0011110000b (12V)
Maximum Current in 10mA units
0000000000b *2
Note *2: It is the current value of 12V PDO which far-end device has.
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7.
Operational Notes
(1) Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when connecting
the power supply, such as mounting an external diode between the power supply and the IC’s power supply pins.
(2) Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the digital and
analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog block. Furthermore,
connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value
when using electrolytic capacitors.
(3) Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
(4) Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected
to a single ground at the reference point of the application board to avoid fluctuations in the small-signal ground caused by large
currents. Also ensure that the ground traces of external components do not cause variations on the ground voltage. The ground
lines must be as short and thick as possible to reduce line impedance.
(5) Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in deterioration of
the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size and copper area to
prevent exceeding the Pd rating.
(6) Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained. The
electrical characteristics are guaranteed under the conditions of each parameter.
(7) Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing of
connections.
(8) Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
(9) Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject the IC
to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should always be turned off
completely before connecting or removing it from the test setup during the inspection process. To prevent damage from static
discharge, ground the IC during assembly and use similar precautions during transport and storage.
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Operational Notes – continued
(10) Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in damaging
the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin. Inter-pin shorts could
be due to many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge
deposited in between pins during assembly to name a few.
(11) Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and extremely
low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge acquired in this
way is enough to produce a significant effect on the conduction through the transistor and cause unexpected operation of the IC.
So unless otherwise specified, unused input pins should be connected to the power supply or ground line.
(12) Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated. P-N
junctions are formed at the intersection of the P layers with the N layers of other elements, creating a parasitic diode or
transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual interference
among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to operate, such as
applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be avoided.
Figure xx. Example of monolithic IC structure
Resistor
Transistor (NPN)
Pin A
Pin B
C
E
Pin A
N
P+
P
N
N
P+
N
Parasitic
Elements
N
P+
N P
N
P+
B
N
C
E
Parasitic
Elements
P Substrate
P Substrate
Parasitic
Elements
Pin B
B
GND
Parasitic
Elements
GND
GND
N Region
close-by
GND
(13) Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and
the decrease in nominal capacitance due to DC bias and others.
(14) Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation(ASO)
(15) Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This protection circuit
is effective in preventing damage due to sudden and unexpected incidents. However, the IC should not be used in applications
characterized by continuous operation or transitioning of the protection circuit.
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8.
Ordering Information
B
M
9
2
A
Part Number
9.
1
1
M W
V
-
Package
MWV:UQFN40V5050A
Z
E2
Manufacturing
Code
Packaging and forming
specification
E2: Embossed tape and reel
Marking Diagrams
UQFN40V5050A (TOP VIEW)
Part Number Marking
M 9 2 A11
LOT Number
1PIN MARK
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10. Physical Dimension Tape and Reel Information
Package Name
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11. Revision History
Date
Revision
02.Feb.2017
001
06.Mar.2017
002
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TSZ22111 • 15 • 001
Changes
New Release
P.1,4,26 Part name changed
P.31 Ordering Information changed
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Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
, transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2.
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.001
Datasheet
BM92A11MWV - Web Page
Part Number
Package
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
BM92A11MWV
UQFN40V5050A
2500
2500
Taping
inquiry
Yes
