BR24G01FVM-3GTTR

Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24G01-3 General Description BR24G01-3 is a serial EEPROM of I2C BUS Interface Method Features Packages W(Typ) x D(Typ) x H(Max)  Completely conforming to the world standard I2C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA)  Other devices than EEPROM can be connected to the same port, saving microcontroller port  1.6V to 5.5V Single Power Source Operation most suitable for battery use  1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400kHz operation  Page Write Mode useful for initial value write at factory shipment  Self-timed Programming Cycle  Low Current Consumption  Prevention of Write Mistake  Write (Write Protect) Function added  Prevention of Write Mistake At Low Voltage  More than 1 million write cycles  More than 40 years data retention  Noise filter built in SCL / SDA terminal  Initial delivery state FFh Not Recommended for New Designs DIP-T8 TSSOP-B8 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm SOP8 TSSOP-B8J 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm SOP- J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm SSOP-B8 3.00mm x 6.40mm x 1.35mm VSON008X2030 2.00mm x 3.00mm x 0.60mm Figure 1. BR24G01-3 Capacity Bit Format Type Power Source Voltage DIP-T8*1 BR24G01-3 BR24G01F-3 SOP8 BR24G01FJ-3 SOP-J8 BR24G01FV-3 1Kbit Package 128×8 SSOP-B8 1.6V to 5.5V BR24G01FVT-3 TSSOP-B8 BR24G01FVJ-3 TSSOP-B8J BR24G01FVM-3 MSOP8 BR24G01NUX-3 VSON008X2030 *1 Not Recommended for New Designs. 〇Product structure : Silicon monolithic integrated circuit www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 〇This product has no designed protection against radioactive rays 1/33 TSZ02201-0R2R0G100160-1-2 11.Jun.2019 Rev.004 Datasheet BR24G01-3 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Rating Unit VCC -0.3 to +6.5 V Supply Voltage Power Dissipation 450 (SOP8) Derate by 4.5mW/°C when operating above Ta=25°C 450 (SOP-J8) Derate by 4.5mW/°C when operating above Ta=25°C 300 (SSOP-B8) Derate by 3.0mW/°C when operating above Ta=25°C 330 (TSSOP-B8) Pd Remark mW 310 (TSSOP-B8J) Derate by 3.3mW/°C when operating above Ta=25°C Derate by 3.1mW/°C when operating above Ta=25°C 310 (MSOP8) Derate by 3.1mW/°C when operating above Ta=25°C 300 (VSON008X2030) Derate by 3.0mW/°C when operating above Ta=25°C 800 (DIP-T8(1)) Derate by 8.0mW/°C when operating above Ta=25°C Storage Temperature Tstg -65 to +150 °C Operating Temperature Topr -40 to +85 °C - -0.3 to Vcc+1.0 V The Max value of Input Voltage/Output Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Input Voltage/Output Voltage is not lower than -0.8V. Tjmax 150 °C Junction temperature at the storage condition VESD -4000 to +4000 V Input Voltage / Output Voltage Junction Temperature Electrostatic discharge voltage (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25°C, Vcc=1.6V to 5.5V) Parameter Min 1,000,000 40 Write Cycles (2) Data Retention (2) Limit Typ - Max - Unit Times Years (2) Not 100% TESTED Recommended Operating Ratings Parameter Power Source Voltage Input Voltage Symbol VCC VIN Rating 1.6 to 5.5 0 to Vcc Unit V DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.6V to 5.5V) Parameter Limit Symbol Min Typ Max Unit Conditions Input High Voltage1 VIH1 0.7VCC - Vcc+1.0 V 1.7V≤Vcc≤5.5V Input Low Voltage1 VIL1 -0.3 (3) - +0.3Vcc V 1.7V≤Vcc≤5.5V Input High Voltage2 VIH2 0.8Vcc - Vcc+1.0 V 1.6V≤Vcc