BR24G02FJ-3AGTE2

Datasheet Serial EEPROM series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24G02-3A ●General Description BR24G02-3A is a serial EEPROM of I2C BUS interface method ●Packages W(Typ.) x D(Typ.)x H(Max.) ●Features  All controls available by 2 ports of serial clock(SCL) and serial data(SDA)  Other devices than EEPROM can be connected to the same port, saving microcontroller port  1.6V to 5.5V single power source action most suitable for battery use  1MHz action is possible (1.7V to 5.5V)  Up to 8 bytes in page write mode  Self-timed programming cycle  Low current consumption  Prevention of write mistake  Write (write protect) function added  Prevention of write mistake at low voltage  More than 1 million write cycles  More than 40 years data retention  Noise filter built in SCL / SDA terminal  Initial delivery state FFh Not Recommended for New Designs DIP-T8 TSSOP-B8J 9.30mm x 6.50mm x 7.10mm 3.00mm x 4.90mm x 1.10mm MSOP8 SOP8 5.00mm x 6.20mm x 1.71mm 2.90mm x 4.00mm x 0.90mm SOP-J8 VSON008X2030 4.90mm x 6.00mm x 1.65mm 2.00mm x 3.00mm x 0.60mm TSSOP-B8 3.00mm x 6.40mm x 1.20mm Figure 1. ●BR24G02-3A Capacity Bit Format Type Power Source Voltage DIP-T8*1 BR24G02-3A 2Kbit 256×8 Package BR24G02F-3A SOP8 BR24G02FJ-3A SOP-J8 BR24G02FVT-3A 1.6V to 5.5V TSSOP-B8 BR24G02FVJ-3A TSSOP-B8J BR24G02FVM-3A MSOP8 BR24G02NUX-3A VSON008X2030 *1 Not Recommended for New Designs. 〇Product structure: Silicon monolithic integrated circuit .www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 〇This product is not designed protection against radioactive rays 1/33 TSZ02201-0R2R0G100570-1-2 11.Jun.2019 Rev.004 BR24G02-3A ●Absolute Maximum Ratings (Ta=25°C) Parameter Supply voltage Power Dissipation Symbol Ratings Unit VCC -0.3 to +6.5 V Pd Remarks 450 (SOP8) When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. 450 (SOP-J8) When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. 330 (TSSOP-B8) When using at Ta=25°C or higher 3.3mW to be reduced per 1°C. 310 (TSSOP-B8J) mW When using at Ta=25°C or higher 3.1mW to be reduced per 1°C. 310 (MSOP8) When using at Ta=25°C or higher 3.1mW to be reduced per 1°C. 300 (VSON008X2030) When using at Ta=25°C or higher 3.0mW to be reduced per 1°C. 800 (DIP-T8*1) When using at Ta=25°C or higher 8.0mW to be reduced per 1°C. Storage Temperature Tstg -65 to +150 °C Operation Temperature Topr -40 to +85 °C - -0.3 to Vcc+1.0 V The Max value of input voltage / output voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of input voltage / output voltage is not under -0.8V. Junction Temperature Tjmax 150 °C Junction temperature at the storage condition Electrostatic discharge voltage (human body model) VESD -4000 to +4000 V Input Voltage / Output Voltage *1 Not Recommended for New Designs. ●Memory Cell Characteristics (Ta=25°C, Vcc=1.6V to 5.5V) Limits Parameter Min. Typ. 1,000,000 Write cycles *2 40 Data retention *2 Max - Unit Times Years *2 Not 100% TESTED ●Recommended Operating Ratings Parameter Symbol Supply voltage Vcc Input voltage VIN Ratings 1.6 to 5.5 0 to Vcc Unit V ●DC Characteristics (Unless otherwise specified, Ta=-40 to +85°C, Vcc =1.6 to 5.5V) Limits Parameter Symbol Unit Min. Typ. Max. Input High Voltage1 VIH1 0.7Vcc - Input Low Voltage1 VIL1 -0.3*3 Input High Voltage2 VIH2 0.8Vcc Input Low Voltage2 Output Low Voltage1 Output Low Voltage2 Conditions Vcc+1.0 V 1.7V≤Vcc≤5.5V - 0.3Vcc V 1.7V≤Vcc≤5.5V - Vcc+1.0 V 1.6V≤Vcc