BR24G08FVM-3GTTR

Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24G08-3 General Description BR24G08-3 is an 8Kbit serial EEPROM of I2C BUS interface. Features Packages W (Typ) x D(Typ) x H(Max) ◼ Completely conforming to the world standard I2C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) ◼ Other devices than EEPROM can be connected to the same port, saving microcontroller port ◼ 1.6V to 5.5V Single Power Source Operation most suitable for battery use ◼ 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400KHz operation ◼ Up to 16Byte in Page Write Mode ◼ Bit Format 1K x 8 ◼ Self-timed Programming Cycle ◼ Low Current Consumption ◼ Prevention of Write Mistake ➢ Write (Write Protect) Function Added ➢ Prevention of Write Mistake at Low Voltage ◼ More than 1 million write cycles ◼ More than 40 years data retention ◼ Noise Filter Built in SCL / SDA Terminal ◼ Initial delivery state FFh Not Recommended for New Designs DIP-T8 TSSOP-B8 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm SOP8 TSSOP-B8M 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.10mm SOP- J8M TSSOP-B8J 4.90mm x 6.00mm x 1.80mm 3.00mm x 4.90mm x 1.10mm SOP- J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm Figure 1. 〇Product structure : Silicon monolithic integrated circuit www.rohm.com ©2013 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 〇This product has not designed protection against radioactive rays 1/36 TSZ02201-0R2R0G100190-1-2 28.Dec.2020 Rev.006 Datasheet BR24G08-3 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Rating Unit VCC -0.3 to +6.5 V Supply Voltage Power Dissipation 0.45 (SOP8) Derate by 4.5mW/°C when operating above Ta=25°C 0.45 (SOP-J8M) Derate by 4.5mW/°C when operating above Ta=25°C 0.45 (SOP-J8) Derate by 4.5mW/°C when operating above Ta=25°C 0.30 (SSOP-B8) Derate by 3.0mW/°C when operating above Ta=25°C 0.33 (TSSOP-B8) Pd Remark W 0.33 (TSSOP-B8M) Derate by 3.3mW/°C when operating above Ta=25°C Derate by 3.3mW/°C when operating above Ta=25°C 0.31 (TSSOP-B8J) Derate by 3.1mW/°C when operating above Ta=25°C 0.31 (MSOP8) Derate by 3.1mW/°C when operating above Ta=25°C 0.30 (VSON008X2030) Derate by 3.0mW/°C when operating above Ta=25°C 0.80 (DIP-T8(1)) Derate by 8.0mW/°C when operating above Ta=25°C Storage Temperature Tstg -65 to +150 °C Operating Temperature Topr -40 to +85 °C - -0.3 to VCC+1.0 V The Max value of Input voltage/ Output voltage is not over 6.5V. When the pulse width is 50ns or less the Min value of Input voltage/Output voltage is not below -0.8V. Tjmax 150 °C Junction temperature at the storage condition VESD -4000 to +4000 V Input Voltage / Output Voltage Junction Temperature Electrostatic discharge voltage (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25°C, VCC=1.6V to 5.5V) Parameter Min 1,000,000 40 Write Cycles (2) Data Retention (2) Limit Typ - Max - Unit Times Years (2)Not 100% TESTED Recommended Operating Ratings Parameter Power Source Voltage Input Voltage Symbol VCC VIN Rating 1.6 to 5.5 0 to VCC Unit V DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, VCC=1.6V to 5.5V) Parameter Limit Symbol Min Typ Max Unit Conditions Input High Voltage1 VIH1 0.7VCC - VCC+1.0 V 1.7V≤VCC≤5.5V Input Low Voltage1 VIL1 -0.3(3) - +0.3VCC V 1.7V≤VCC≤5.5V Input High Voltage2 VIH2 0.8VCC - VCC+1.0 V 1.6V≤VCC