Datasheet
Serial EEPROM Series Standard EEPROM
I2C BUS EEPROM (2-Wire)
BR24G128-3
General Description
BR24G128-3 series is a serial EEPROM of I2C BUS Interface Method
Features
Packages W(Typ) x D(Typ) x H(Max)
◼ Completely conforming to the world standard I2C
BUS.
All controls available by 2 ports of serial clock
(SCL) and serial data (SDA)
◼ Other devices than EEPROM can be connected to
the same port, saving microcontroller port
◼ 1.6V to 5.5V Single Power Source Operation most
suitable for battery use
◼ 1.6V to 5.5V wide limit of operating voltage, possible
FAST MODE 400kHz operation
◼ Page Write Mode useful for initial value write at
factory shipment
◼ Self-timed Programming Cycle
◼ Low Current Consumption
◼ Prevention of Write Mistake
➢ Write (Write Protect) Function Added
➢ Prevention of Write Mistake At Low Voltage
◼ More than 1 million write cycles
◼ More than 40 years data retention
◼ Noise filter built in SCL / SDA terminal
◼ Initial delivery state FFh
Not Recommended for
New Designs
DIP-T8
TSSOP-B8
9.30mm x 6.50mm x 7.10mm
3.00mm x 6.40mm x 1.20mm
SOP8
TSSOP-B8J
5.00mm x 6.20mm x 1.71mm
3.00mm x 4.90mm x 1.10mm
SOP- J8
MSOP8
4.90mm x 6.00mm x 1.65mm
2.90mm x 4.00mm x 0.90mm
SSOP-B8
VSON008X2030
3.00mm x 6.40mm x 1.35mm
2.00mm x 3.00mm x 0.60mm
Figure 1.
BR24G128-3
Capacity
Bit Format
Type
Power Source
Voltage
DIP-T8*1
BR24G128-3
BR24G128F-3
SOP8
BR24G128FJ-3
SOP-J8
BR24G128FV-3
128Kbit
Package
16K×8
SSOP-B8
1.6V to 5.5V
BR24G128FVT-3
TSSOP-B8
BR24G128FVJ-3
TSSOP-B8J
BR24G128FVM-3
MSOP8
BR24G128NUX-3
VSON008X2030
*1 Not Recommended for New Designs.
〇Product structure : Silicon monolithic integrated circuit
www.rohm.com
©2013 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
〇This product has no designed protection against radioactive rays
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TSZ02201-0R2R0G100230-1-2
28.Dec.2020 Rev.006
Datasheet
BR24G128-3
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Rating
Unit
Vcc
-0.3 to +6.5
V
Supply Voltage
Power Dissipation
450 (SOP8)
Derate by 4.5mW/°C when operating above Ta=25°C
450 (SOP-J8)
Derate by 4.5mW/°C when operating above Ta=25°C
300 (SSOP-B8)
Derate by 3.0mW/°C when operating above Ta=25°C
330 (TSSOP-B8)
Pd
Remark
mW
310 (TSSOP-B8J)
Derate by 3.3mW/°C when operating above Ta=25°C
Derate by 3.1mW/°C when operating above Ta=25°C
310 (MSOP8)
Derate by 3.1mW/°C when operating above Ta=25°C
300 (VSON008X2030)
Derate by 3.0mW/°C when operating above Ta=25°C
800
(DIP-T8(1))
Derate by 8.0mW/°C when operating above Ta=25°C
Storage Temperature
Tstg
-65 to +150
°C
Operating Temperature
Topr
-40 to +85
°C
-
-0.3 to Vcc+1.0
V
The Max value of Input Voltage/Output Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is not lower than -1.0V.
Tjmax
150
°C
Junction temperature at the storage condition
VESD
-4000 to +4000
V
Input Voltage /
Output Voltage
Junction
Temperature
Electrostatic discharge
voltage
(human body model)
(1) Not Recommended for New Designs.
Memory Cell Characteristics (Ta=25°C, VCC=1.6V to 5.5V)
Parameter
Min
1,000,000
40
Write Cycles (2)
Data Retention (2)
Limit
Typ
-
Max
-
Unit
Times
Years
(2) Not 100% TESTED
Recommended Operating Ratings
Parameter
Power Source Voltage
Input Voltage
Symbol
Vcc
VIN
Rating
1.6 to 5.5
0 to Vcc
Unit
V
DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, VCC=1.6V to 5.5V)
Parameter
Symbol
Limit
Unit
Conditions
Min
Typ
Max
VIH1
0.7Vcc
-
VCC+1.0
V
1.7V≤VCC≤5.5V
Input Low Voltage1
VIL1
-0.3(3)
-
+0.3Vcc
V
1.7V≤VCC≤5.5V
Input High Voltage2
VIH2
0.8Vcc
-
VCC+1.0
V
1.6V≤VCC
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