BR24G32-3

Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24G32-3 General Description BR24G32-3 is a 32Kbit serial EEPROM of I2C BUS Interface Method Features  Completely conforming to the world standard I 2C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA)  Other devices than EEPROM can be connected to the same port, saving microcontroller port  1.6V to 5.5V Single Power Source Operation most suitable for battery use  1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400kHz operation  Up to 32 Byte in Page Write Mode  Bit Format 4K x 8  Self-timed Programming Cycle  Low Current Consumption  Prevention of Write Mistake  WP (Write Protect) Function added  Prevention of Write Mistake at Low Voltage  1 million write cycles  40 years data retention  Noise filter built in SCL / SDA terminal  Initial delivery state FFh Packages W(Typ) x D(Typ) x H(Max) DIP-T8 TSSOP-B8 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm SOP8 TSSOP-B8J 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm SOP- J8M MSOP8 4.90mm x 6.00mm x 1.80mm 2.90mm x 4.00mm x 0.90mm SOP- J8 VSON008X2030 4.90mm x 6.00mm x 1.65mm 2.00mm x 3.00mm x 0.60mm SSOP-B8 3.00mm x 6.40mm x 1.35mm Figure 1. 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100210-1-2 ©2012 ROHM Co., Ltd. All rights reserved. 1/35 TSZ22111 • 14 • 001 28.Nov.2018 Rev.009 Datasheet BR24G32-3 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Rating Unit VCC -0.3 to +6.5 V Supply Voltage Power Dissipation Pd 0.45 (SOP8) Derate by 4.5mW/°C when operating above Ta=25°C 0.45 (SOP-J8M) Derate by 4.5mW/°C when operating above Ta=25°C 0.45 (SOP-J8) Derate by 4.5mW/°C when operating above Ta=25°C 0.30 (SSOP-B8) Derate by 3.0mW/°C when operating above Ta=25°C 0.33 (TSSOP-B8) W Derate by 3.1mW/°C when operating above Ta=25°C 0.31 (MSOP8) Derate by 3.1mW/°C when operating above Ta=25°C 0.30 (VSON008X2030) Derate by 3.0mW/°C when operating above Ta=25°C 0.80 (DIP-T8) Derate by 8.0mW/°C when operating above Ta=25°C Tstg -65 to +150 °C Operating Temperature Topr -40 to +85 °C - -0.3 to VCC+1.0 V Tjmax 150 °C VESD -4000 to +4000 V Junction Temperature Electrostatic discharge voltage (human body model) Derate by 3.3mW/°C when operating above Ta=25°C 0.31 (TSSOP-B8J) Storage Temperature Input Voltage / Output Voltage Remark The Max value of Input Voltage/Output Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Input Voltage/Output Voltage is -1.0V. Junction temperature at the storage condition Memory Cell Characteristics (Ta=25°C, VCC=1.6V to 5.5V) Parameter Min 1,000,000 40 Write Cycles (1) Data Retention (1) Limit Typ - Max - Unit Times Years (1) Not 100% TESTED Recommended Operating Ratings Parameter Power Source Voltage Input Voltage Symbol VCC VIN Rating 1.6 to 5.5 0 to VCC Unit V DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, VCC=1.6V to 5.5V) Parameter Limit Symbol Min Typ Max Unit Conditions Input High Voltage1 VIH1 0.7VCC - VCC+1.0 V 1.7V≤VCC≤5.5V Input Low Voltage1 VIL1 -0.3(2) - +0.3VCC V 1.7V≤VCC≤5.5V Input High Voltage2 VIH2 0.8VCC - VCC+1.0 V 1.6V≤VCC