Datasheet
Serial EEPROM Series Standard EEPROM
I2C BUS EEPROM (2-Wire)
BR24G32-3
General Description
BR24G32-3 is a 32Kbit serial EEPROM of I2C BUS Interface Method
Features
◼ Completely conforming to the world standard I2C
BUS.
All controls available by 2 ports of serial clock
(SCL) and serial data (SDA)
◼ Other devices than EEPROM can be connected to
the same port, saving microcontroller port
◼ 1.6V to 5.5V Single Power Source Operation most
suitable for battery use
◼ 1.6V to 5.5V wide limit of operating voltage, possible
FAST MODE 400kHz operation
◼ Up to 32 Byte in Page Write Mode
◼ Bit Format 4K x 8
◼ Self-timed Programming Cycle
◼ Low Current Consumption
◼ Prevention of Write Mistake
➢ WP (Write Protect) Function added
➢ Prevention of Write Mistake at Low Voltage
◼ 1 million write cycles
◼ 40 years data retention
◼ Noise filter built in SCL / SDA terminal
◼ Initial delivery state FFh
Packages W(Typ) x D(Typ) x H(Max)
Not Recommended for
New Designs
DIP-T8
TSSOP-B8
9.30mm x 6.50mm x 7.10mm
3.00mm x 6.40mm x 1.20mm
SOP8
TSSOP-B8J
5.00mm x 6.20mm x 1.71mm
3.00mm x 4.90mm x 1.10mm
SOP- J8M
MSOP8
4.90mm x 6.00mm x 1.80mm
2.90mm x 4.00mm x 0.90mm
SOP- J8
VSON008X2030
4.90mm x 6.00mm x 1.65mm
2.00mm x 3.00mm x 0.60mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
Figure 1.
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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Datasheet
BR24G32-3
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Rating
Unit
VCC
-0.3 to +6.5
V
Supply Voltage
Power Dissipation
Pd
Remark
0.45 (SOP8)
Derate by 4.5mW/°C when operating above Ta=25°C
0.45 (SOP-J8M)
Derate by 4.5mW/°C when operating above Ta=25°C
0.45 (SOP-J8)
Derate by 4.5mW/°C when operating above Ta=25°C
0.30 (SSOP-B8)
Derate by 3.0mW/°C when operating above Ta=25°C
0.33 (TSSOP-B8)
W
Derate by 3.3mW/°C when operating above Ta=25°C
0.31 (TSSOP-B8J)
Derate by 3.1mW/°C when operating above Ta=25°C
0.31 (MSOP8)
Derate by 3.1mW/°C when operating above Ta=25°C
0.30 (VSON008X2030)
Derate by 3.0mW/°C when operating above Ta=25°C
0.80
(DIP-T8(1))
Derate by 8.0mW/°C when operating above Ta=25°C
Storage Temperature
Tstg
-65 to +150
°C
Operating Temperature
Topr
-40 to +85
°C
-
-0.3 to VCC+1.0
V
The Max value of Input Voltage/Output Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is -1.0V.
Tjmax
150
°C
Junction temperature at the storage condition
VESD
-4000 to +4000
V
Input Voltage /
Output Voltage
Junction
Temperature
Electrostatic discharge
voltage
(human body model)
(1) Not Recommended for New Designs.
Memory Cell Characteristics (Ta=25°C, VCC=1.6V to 5.5V)
Parameter
Min
1,000,000
40
Write Cycles (2)
Data Retention (2)
Limit
Typ
-
Max
-
Unit
Times
Years
(2) Not 100% TESTED
Recommended Operating Ratings
Parameter
Power Source Voltage
Input Voltage
Symbol
VCC
VIN
Rating
1.6 to 5.5
0 to VCC
Unit
V
DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, VCC=1.6V to 5.5V)
Parameter
Limit
Symbol
Min
Typ
Max
Unit
Conditions
Input High Voltage1
VIH1
0.7VCC
-
VCC+1.0
V
1.7V≤VCC≤5.5V
Input Low Voltage1
VIL1
-0.3(3)
-
+0.3VCC
V
1.7V≤VCC≤5.5V
Input High Voltage2
VIH2
0.8VCC
-
VCC+1.0
V
1.6V≤VCC
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