Datasheet
Serial EEPROM Series Standard EEPROM
I2C BUS EEPROM (2-Wire)
BR24G64-3A
General Description
BR24G64-3A is a serial EEPROM of I2C BUS Interface Method
Features
Packages W(Typ) x D(Typ)x H(Max)
All controls available by 2 ports of serial clock(SCL) and
serial data(SDA)
Other devices than EEPROM can be connected to the
same port, saving microcontroller port
1.6V to 5.5V Single Power Source Operation most
suitable for battery use
1MHz operation is possible (1.7V to 5.5V)
Up to 32 Byte in Page Write Mode
Bit format 8K x 8bit
Self-timed Programming Cycle
Low Current Consumption
Prevention of Write Mistake
WP (Write Protect) Function added
Prevention of Write Mistake at Low Voltage
More than 1 million write cycles
More than 40 years data retention
Noise filter built in SCL / SDA terminal
Initial delivery state FFh
DIP-T8
9.30mm x 6.50mm x 7.10mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
TSSOP-B8J
SOP8
5.00mm x 6.20mm x 1.71mm
3.00mm x 4.90mm x 1.10mm
SOP-J8
MSOP8
4.90mm x 6.00mm x 1.65mm
2.90mm x 4.00mm x 0.90mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
VSON008X2030
2.00mm x 3.00mm x 0.60mm
VMMP008Z1830
1.85mm x 3.00mm x 0.40mm
Figure 1.
○Product structure:Silicon monolithic integrated circuit
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
○This product has no designed protection against radioactive rays
1/35
TSZ02201-0R2R0G100040-1-2
11.Nov.2016 Rev.006
Datasheet
BR24G64-3A
Absolute Maximum Ratings (Ta=25°C)
Parameter
Supply Voltage
Symbol
Rating
Unit
VCC
-0.3 to +6.5
V
Remark
0.45 (SOP8)
Derate by 4.5mW/°C when operating above Ta=25°C
0.45 (SOP-J8)
Derate by 4.5mW/°C when operating above Ta=25°C
0.30 (SSOP-B8)
Derate by 3.0mW/°C when operating above Ta=25°C
0.33 (TSSOP-B8)
Permissible
Dissipation
Pd
Derate by 3.3mW/°C when operating above Ta=25°C
W
0.31 (TSSOP-B8J)
Derate by 3.1mW/°C when operating above Ta=25°C
0.31 (MSOP8)
Derate by 3.1mW/°C when operating above Ta=25°C
0.30 (VSON008X2030)
Derate by 3.0mW/°C when operating above Ta=25°C
0.80 (DIP-T8)
Derate by 8.0mW/°C when operating above Ta=25°C
0.21(VMMP008Z1830)
Derate by 2.1mW/°C when operating above Ta=25°C
Storage Temperature
Tstg
-65 to +150
°C
Operating Temperature
Topr
-40 to +85
°C
‐
-0.3 to VCC+1.0
V
The Max value of Input Voltage/Output Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is not lower than -1.0V.
Tjmax
150
°C
Junction temperature at the storage condition
VESD
-4000 to +4000
V
Input Voltage /
Output Voltage
Junction
Temperature
Electrostatic discharge
voltage
(human body model)
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the
absolute maximum ratings.
Memory Cell Characteristics (Ta=25°C, VCC=1.6V to 5.5V)
Parameter
Limit
Typ
-
Min
1,000,000
40
(Note1)
Write Cycles
Data Retention (Note1)
Unit
Max
-
Times
Years
(Note1) Not 100% TESTED
Recommended Operating Ratings
Parameter
Power Source Voltage
Input Voltage
Symbol
VCC
VIN
Rating
1.6 to 5.5
0 to VCC
Unit
V
DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C)
Parameter
Input High Voltage 1
Symbol
VIH1
Limit
Min
Typ
Max
0.7VCC
-
VCC+1.0
(Note1)
Unit
Conditions
V
1.7V≤VCC≤5.5V
Input Low voltage 1
VIL1
-0.3
-
+0.3VCC
V
1.7V≤VCC≤5.5V
Input High Voltage 2
VIH2
0.8VCC
-
VCC+1.0
V
1.6V≤VCC
很抱歉,暂时无法提供与“BR24G64-3A”相匹配的价格&库存,您可以联系我们找货
免费人工找货