BR24G64FVM-3AGTTR

Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24G64-3A General Description BR24G64-3A is a serial EEPROM of I2C BUS Interface Method Features Packages W(Typ) x D(Typ)x H(Max)  All controls available by 2 ports of serial clock(SCL) and serial data(SDA)  Other devices than EEPROM can be connected to the same port, saving microcontroller port  1.6V to 5.5V Single Power Source Operation most suitable for battery use  1MHz operation is possible (1.7V to 5.5V)  Up to 32 Byte in Page Write Mode  Bit format 8K x 8bit  Self-timed Programming Cycle  Low Current Consumption  Prevention of Write Mistake  WP (Write Protect) Function added  Prevention of Write Mistake at Low Voltage  More than 1 million write cycles  More than 40 years data retention  Noise filter built in SCL / SDA terminal  Initial delivery state FFh Not Recommended for New Designs DIP-T8 TSSOP-B8 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm SOP8 TSSOP-B8J 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm SOP-J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm Figure 1. 〇Product structure: Silicon monolithic integrated circuit .www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 〇This product has no designed protection against radioactive rays 1/34 TSZ02201-0R2R0G100040-1-2 11.Jun.2019 Rev.008 BR24G64-3A Absolute Maximum Ratings (Ta=25°C) Parameter Supply Voltage Permissible Dissipation Symbol Rating Unit VCC -0.3 to +6.5 V 0.45 (SOP8) Derate by 4.5mW/°C when operating above Ta=25°C 0.45 (SOP-J8) Derate by 4.5mW/°C when operating above Ta=25°C 0.30 (SSOP-B8) Derate by 3.0mW/°C when operating above Ta=25°C 0.33 (TSSOP-B8) Pd Remark Derate by 3.3mW/°C when operating above Ta=25°C W 0.31 (TSSOP-B8J) Derate by 3.1mW/°C when operating above Ta=25°C 0.31 (MSOP8) Derate by 3.1mW/°C when operating above Ta=25°C 0.30 (VSON008X2030) Derate by 3.0mW/°C when operating above Ta=25°C 0.80 (DIP-T8(Note1)) Derate by 8.0mW/°C when operating above Ta=25°C Storage Temperature Tstg -65 to +150 °C Operating Temperature Topr -40 to +85 °C - -0.3 to VCC+1.0 V The Max value of Input Voltage/Output Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Input Voltage/Output Voltage is not lower than -1.0V. Tjmax 150 °C Junction temperature at the storage condition VESD -4000 to +4000 V Input Voltage / Output Voltage Junction Temperature Electrostatic discharge voltage (human body model) Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (Note1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25°C, VCC=1.6V to 5.5V) Parameter Limit Typ - Min 1,000,000 40 Write Cycles (Note2) Data Retention (Note2) Unit Max - Times Years (Note2) Not 100% TESTED Recommended Operating Ratings Parameter Power Source Voltage Input Voltage Symbol VCC VIN Rating 1.6 to 5.5 0 to VCC Unit V DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C) Parameter Symbol Limit Min Typ Max Unit Conditions Input High Voltage 1 VIH1 0.7VCC - VCC+1.0 V 1.7V≤VCC≤5.5V Input Low voltage 1 VIL1 -0.3(Note3) - +0.3VCC V 1.7V≤VCC≤5.5V Input High Voltage 2 VIH2 0.8VCC - VCC+1.0 V 1.6V≤VCC