BR24G64FVM-3GTTR

Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24G64-3 General Description BR24G64-3 is a 64Kbit serial EEPROM of I2C BUS interface method Features Packages W(Typ) x D(Typ) x H(Max) ◼ Completely conforming to the world standard I2C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA) ◼ Other devices than EEPROM can be connected to the same port, saving microcontroller port ◼ 1.6V to 5.5V Single Power Source Operation most suitable for battery use ◼ 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400KHz operation ◼ Up to 32 Byte in Page Write Mode ◼ Bit Format 8K x 8 ◼ Self-timed Programming Cycle ◼ Low Current Consumption ◼ Prevention of Write Mistake ➢ WP (Write Protect) Function added ➢ Prevention of Write Mistake at Low Voltage ◼ 1 million write cycles ◼ 40 years data retention ◼ Noise filter built in SCL / SDA terminal ◼ Initial delivery state FFh Not Recommended for New Designs DIP-T8 TSSOP-B8 9.30mm x 6.50mm x 7.10mm 3.00mm x 6.40mm x 1.20mm SOP8 TSSOP-B8J 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm SOP- J8 MSOP8 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm SSOP-B8 VSON008X2030 3.00mm x 6.40mm x 1.35mm 2.00mm x 3.00mm x 0.60mm Figure 1. 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays www.rohm.com ©2012 ROHM Co., Ltd. All rights reserved. TSZ22111 • 14 • 001 1/34 TSZ02201-0R2R0G100220-1-2 28.Dec.2020 Rev.009 Datasheet BR24G64-3 Absolute Maximum Ratings (Ta=25ºC) Parameter Symbol Rating Unit VCC -0.3 to +6.5 V Supply Voltage Power Dissipation 0.45 (SOP8) Derate by 4.5mW/°C when operating above Ta=25°C 0.45 (SOP-J8) Derate by 4.5mW/°C when operating above Ta=25°C 0.30 (SSOP-B8) Derate by 3.0mW/°C when operating above Ta=25°C 0.33 (TSSOP-B8) Pd W 0.31 (TSSOP-B8J) Derate by 3.1mW/°C when operating above Ta=25°C 0.31 (MSOP8) Derate by 3.1mW/°C when operating above Ta=25°C Derate by 3.0mW/°C when operating above Ta=25°C (DIP-T8(1)) Derate by 8.0mW/°C when operating above Ta=25°C Storage Temperature Tstg -65 to +150 °C Operating Temperature Topr -40 to +85 °C - -0.3 to Vcc+1.0 V Tjmax 150 °C VESD -4000 to +4000 V Junction Temperature Electrostatic discharge voltage (human body model) Derate by 3.3mW/°C when operating above Ta=25°C 0.30 (VSON008X2030) 0.80 Input Voltage / Output Voltage Remark The Max value of Input Voltage/Output Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Input Voltage/Output Voltage is -1.0V. Junction temperature at the storage condition (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25ºC, Vcc=1.6V to 5.5V) Parameter Min 1,000,000 40 (2) Write Cycles Data Retention (2) Limit Typ - Max - Unit Times Years (2) Not 100% TESTED Recommended Operating Ratings Parameter Power Source Voltage Input Voltage Symbol Vcc VIN Rating 1.6 to 5.5 0 to Vcc Unit V DC Characteristics (Unless otherwise specified, Ta=-40ºC to +85ºC, Vcc=1.6V to 5.5V) Parameter Limit Symbol Unit Conditions Min Typ Max VIH1 0.7Vcc - Vcc+1.0 V 1.7V≤Vcc≤5.5V Input Low Voltage1 VIL1 -0.3(3) - +0.3Vcc V 1.7V≤Vcc≤5.5V Input High Voltage2 VIH2 0.8Vcc - Vcc+1.0 V 1.6V≤Vcc