Datasheet
Serial EEPROM Series Standard EEPROM
I2C BUS EEPROM (2-Wire)
BR24T16-W
General Description
BR24T16-W is a serial EEPROM of I2C BUS Interface Method
Features
Packages W(Typ) x D(Typ) x H(Max)
◼ Completely conforming to the world standard I2C
BUS.
All controls available by 2 ports of serial clock
(SCL) and serial data (SDA)
◼ Other devices than EEPROM can be connected to
the same port, saving microcontroller port
◼ 1.6V to 5.5V Single Power Source Operation most
suitable for battery use
◼ 1.6V to 5.5V wide limit of operating voltage, possible
FAST MODE 400KHz operation
◼ Page Write Mode useful for initial value write at
factory shipment
◼ Self-timed Programming Cycle
◼ Low Current Consumption
◼ Prevention of Write Mistake
➢ WP (Write Protect) Function added
➢ Prevention of Write Mistake at Low Voltage
◼ More than 1 million write cycles
◼ More than 40 years data retention
◼ Noise filter built in SCL / SDA terminal
◼ Initial delivery state FFh
DIP-T8
9.30mm x 6.50mm x 7.10mm
SOP8
TSSOP-B8
5.00mm x 6.20mm x 1.71mm
3.00mm x 6.40mm x 1.20mm
SOP-J8
TSSOP-B8J
4.90mm x 6.00mm x 1.65mm
3.00mm x 4.90mm x 1.10mm
SOP-J8A
MSOP8
4.90mm x 6.00mm x 1.75mm
2.90mm x 4.00mm x 0.90mm
VSON008X2030
SSOP-B8
3.00mm x 6.40mm x 1.35mm
Bit Format
Type
Power Source
Voltage
Package
DIP-T8 (1)
BR24T16-W
BR24T16-WZ
DIP8K
BR24T16F-W
SOP8
BR24T16FJ-W
SOP-J8
BR24T16FJ-WSGN
16Kbit
2.00mm x 3.00mm x 0.60mm
Figure 1.
BR24T16-W
Capacity
DIP8K
9.27mm x 6.35mm x 8.63mm
2K×8
SOP-J8A
1.6V to 5.5V
BR24T16FV-W
SSOP-B8
BR24T16FVT-W
TSSOP-B8
BR24T16FVJ-W
TSSOP-B8J
BR24T16FVM-W
MSOP8
BR24T16NUX-W
VSON008X2030
(1) Not Recommended for New Designs. Recommend BR24T16-WZ.
〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays
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24.Dec.2020 Rev.008
Datasheet
BR24T16-W
Absolute Maximum Ratings (Ta=25ºC)
Parameter
Symbol
Rating
Unit
VCC
-0.3 to +6.5
V
Supply Voltage
450 (SOP8)
Derate by 4.5mW/°C when operating above Ta=25°C
450 (SOP-J8)
Derate by 4.5mW/°C when operating above Ta=25°C
450 (SOP-J8A)
Derate by 4.5mW/°C when operating above Ta=25°C
300 (SSOP-B8)
Derate by 3.0mW/°C when operating above Ta=25°C
330 (TSSOP-B8)
Power Dissipation
Pd
Remark
Derate by 3.3mW/°C when operating above Ta=25°C
mW
310 (TSSOP-B8J)
Derate by 3.1mW/°C when operating above Ta=25°C
310 (MSOP8)
Derate by 3.1mW/°C when operating above Ta=25°C
300 (VSON008X2030)
Derate by 3.0mW/°C when operating above Ta=25°C
800 (DIP-T8
(1))
Derate by 8.0mW/°C when operating above Ta=25°C
Derate by 8.52mW/°C when operating above Ta=25°C
When mounted (on 114.5 mm × 101.5 mm × 1.6 mm thick, glass
epoxy on single-layer substrate).
852 (DIP8K)
Storage Temperature
Tstg
-65 to +150
°C
Operating Temperature
Topr
-40 to +85
°C
-
-0.3 to Vcc+1.0
V
The Max value of input voltage / output voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of input voltage
/ output voltage is not lower than -1.0V.
Tjmax
150
°C
Junction temperature at the storage condition
VESD
-4000 to +4000
V
Input Voltage /
Output Voltage
Junction
Temperature
Electrostatic discharge
voltage
(human body model)
(1) Not Recommended for New Designs. Recommend BR24T16-WZ.
Memory Cell Characteristics (Ta=25ºC, Vcc=1.6V to 5.5V)
Parameter
Min
1,000,000
40
Write Cycles (1)
Data Retention (1)
Limit
Typ
-
Max
-
Unit
Times
Years
(1) Not 100% TESTED
Recommended Operating Ratings
Parameter
Power Source Voltage
Input Voltage
Symbol
Vcc
VIN
Rating
1.6 to 5.5
0 to Vcc
Unit
V
DC Characteristics (Unless otherwise specified, Ta=-40ºC to +85ºC, Vcc=1.6V to 5.5V)
Parameter
Symbol
Limit
Unit
Conditions
Min
Typ
Max
VIH1
0.7Vcc
-
Vcc+1.0
V
1.7V≤Vcc≤5.5V
Input Low Voltage1
VIL1
-0.3(2)
-
+0.3Vcc
V
1.7V≤Vcc≤5.5V
Input High Voltage2
VIH2
0.8Vcc
-
Vcc+1.0
V
1.6V≤Vcc
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