BR24T256FVT-WE2

Datasheet Serial EEPROM Series Standard EEPROM I2C BUS EEPROM (2-Wire) BR24T256-W General Description BR24T256-W is a serial EEPROM of I2C BUS Interface Method Packages W(Typ) x D(Typ) x H(Max) Features  Completely conforming to the world standard I 2C BUS. All controls available by 2 ports of serial clock (SCL) and serial data (SDA)  Other devices than EEPROM can be connected to the same port, saving microcontroller port  1.6V to 5.5V Single Power Source Operation most suitable for battery use  1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400KHz operation  Page Write Mode useful for initial value write at factory shipment  Self-timed Programming Cycle  Low Current Consumption  Prevention of Write Mistake  WP (Write Protect) Function added  Prevention of Write Mistake at Low Voltage  More than 1 million write cycles  More than 40 years data retention  Noise filter built in SCL / SDA terminal  Initial delivery state FFh DIP-T8 DIP8K 9.30mm x 6.50mm x 7.10mm 9.27mm x 6.35mm x 8.63mm SOP8 SSOP-B8 5.00mm x 6.20mm x 1.71mm 3.00mm x 6.40mm x 1.35mm SOP- J8 TSSOP-B8 4.90mm x 6.00mm x 1.65mm 3.00mm x 6.40mm x 1.20mm Figure 1. BR24T256-W Capacity Bit Format Type Power Source Voltage DIP-T8 (1) BR24T256-W BR24T256-WZ DIP8K BR24T256F-W 256Kbit 32K×8 Package SOP8 1.6V to 5.5V BR24T256FJ-W SOP-J8 BR24T256FV-W SSOP-B8 BR24T256FVT-W TSSOP-B8 (1) Not Recommended for New Designs. Recommend BR24T256-WZ. 〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100140-1-2 ©2012 ROHM Co., Ltd. All rights reserved. 1/31 TSZ22111 • 14 • 001 17.Dec.2018 Rev.004 Datasheet BR24T256-W Absolute Maximum Ratings (Ta=25ºC) Parameter Symbol Rating Unit Vcc -0.3 to +6.5 V Supply Voltage 450 (SOP8) Derate by 4.5mW/°C when operating above Ta=25°C 450 (SOP-J8) Derate by 4.5mW/°C when operating above Ta=25°C 300 (SSOP-B8) Power Dissipation Pd Derate by 3.0mW/°C when operating above Ta=25°C mW 330 (TSSOP-B8) 800 (DIP-T8 (1)) Derate by 3.3mW/°C when operating above Ta=25°C. Derate by 8.0mW/°C when operating above Ta=25°C Derate by 8.52mW/°C when operating above Ta=25°C When mounted (on 114.5 mm × 101.5 mm × 1.6 mm thick, glass epoxy on single-layer substrate). 852 (DIP8K) Storage Temperature Tstg -65 to +150 °C Operating Temperature Topr -40 to +85 °C - -0.3 to Vcc+1.0 V Tjmax 150 °C VESD -4000 to +4000 V Input Voltage / Output Voltage Junction Temperature Electrostatic discharge voltage (human body model) Remark The Max value of input voltage / output voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of input voltage / output voltage is not lower than -1.0V. Junction temperature at the storage condition (1) Not Recommended for New Designs. Recommend BR24T256-WZ. Memory Cell Characteristics (Ta=25ºC, Vcc=1.6V to 5.5V) Parameter Min 1,000,000 40 (1) Write Cycles Data Retention (1) Limit Typ - Max - Unit Times Years (1) Not 100% TESTED Recommended Operating Ratings Parameter Power Source Voltage Input Voltage Symbol Vcc VIN Rating 1.6 to 5.5 0 to Vcc Unit V DC Characteristics (Unless otherwise specified, Ta=-40ºC to +85ºC, Vcc=1.6V to 5.5V) Parameter Symbol Limit Min Typ Max Unit Conditions Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7V≤Vcc≤5.5V Input Low Voltage1 VIL1 -0.3(2) - +0.3Vcc V 1.7V≤Vcc≤5.5V Input High Voltage2 VIH2 0.8Vcc - Vcc+1.0 V 1.6V≤Vcc