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BR25A256FVT-3MGE2

BR25A256FVT-3MGE2

  • 厂商:

    ROHM(罗姆)

  • 封装:

    TSSOP8

  • 描述:

    IC EEPROM 256KBIT SPI 8TSSOP

  • 数据手册
  • 价格&库存
BR25A256FVT-3MGE2 数据手册
Datasheet Serial EEPROM Series Automotive EEPROM 105℃ Operation SPI BUS EEPROM BR25A256-3M General Description BR25A256-3M is a 256Kbit serial EEPROM of SPI BUS interface. Features Packages W(Typ) x D(Typ) x H(Max)    High Speed Clock Action up to 10MHz (Max) Wait Function by HOLDB Terminal Part or Whole of Memory Arrays Settable as Read only Memory Area by Program  2.5V to 5.5V Single Power Source Operation Most Suitable for Battery Use  Up to 64Byte in Page Write Mode.  For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)  Self-timed Programming Cycle  Low Current Consumption  At Write Action (5V) : 0.7mA (Typ)  At Read Action (5V) : 2.4mA (Typ)  At Standby Action (5V) : 0.1µA (Typ)  Address Auto Increment Function at Read Action  Prevention of Write Mistake  Write Prohibition at Power On  Write Prohibition by Command Code (WRDI)  Write Prohibition by WPB Pin  Write Prohibition Block Setting by Status Registers (BP1, BP0)  Prevention of Write Mistake at Low Voltage  More than 100 years Data Retention.  More than 1 Million Write Cycles.  Bit Format 32K×8  Initial Delivery Data Memory Array: FFh Status Register: WPEN, BP1, BP0 : 0 ○Product structure:Silicon monolithic integrated circuit www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 SOP- J8 4.90mm x 6.00mm x 1.65mm TSSOP-B8 3.00mm x 6.40mm x 1.20mm Figure 1. ○This product is not designed protection against radioactive rays 1/28 TSZ02201-0R1R0G100390-1-2 22.Dec.2014 Rev.003 Datasheet BR25A256-3M Absolute Maximum Ratings (Ta=25°C) Parameter Supply Voltage Symbol VCC Power Dissipation Pd Storage Temperature Operating Temperature Input Voltage / Output Voltage Junction temperature Electrostatic discharge voltage (human body model) Unit V Tstg Topr Ratings -0.3 to +6.5 0.45(SOP8) 0.45 (SOP-J8) 0.33 (TSSOP-B8) - 65 to +150 - 40 to +105 ‐ - 0.3 to Vcc+1.0 V Tjmax 150 °C VESD -4000 to +4000 Remarks When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. W When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. When using at Ta=25°C or higher 3.3mW to be reduced per 1°C. °C °C The Max value of Input Voltage/Output Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Input Voltage/Output Voltage is not under -1.0V. Junction temperature at the storage condition V Caution: Operating the IC over the absolute Maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute Maximum ratings. Memory Cell Characteristics (Vcc=2.5V to 5.5V) Parameter Min 1,000,000 150,000 100 20 Write Cycles (Note1) Data Retention (Note1) Limits Typ - Max - Unit Condition Times Times Years Years Ta≤25°C Ta≤105°C Ta≤25°C Ta≤105°C (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Power Source Voltage Input Voltage Bypass capacitor Ratings Symbol Min 2.5 0 0.1 Vcc VIN C Max 5.5 VCC - Unit V µF Input / Output Capacity (Ta=25°C, frequency=5MHz) Parameter Input Capacity (Note1) Output Capacity (Note1) Symbol CIN COUT Min - - Max 8 8 Unit pF Conditions VIN=GND VOUT=GND (Note1) Not 100% TESTED. DC Characteristics (Unless otherwise specified, Ta=-40°C to +105°C, Vcc=2.5V to 5.5V) Parameter Symbol Limits Typ - - - - - - Max Vcc+1.0 0.3xVcc 0.4 Vcc 1 1 Input High Voltage Input Low Voltage Output Low Voltage Output High Voltage Input Leakage Current Output Leakage Current VIH VIL VOL VOH ILI ILO Min 0.7xVcc -0.3 (Note1) 0 Vcc-0.2 -1 -1 Supply Current (Write) ICC1 - - 3 Supply Current (Read) ICC2 - - 4 Standby Current ISB - - 10 Unit Conditions V V V V µA µA IOL=3.0mA IOH=-2.0mA VIN=0 to Vcc VOUT=0 to Vcc, CSB=Vcc Vcc=5.5V, fSCK=10MHz, tE/W =5ms mA Byte Write, Page Write, Write Status register Vcc=5.5V, fSCK=10MHz, SO=OPEN mA Read, Read Status Register Vcc=5.5V, SO=OPEN µA CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or GND (Note1) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・15・001 2/28 TSZ02201-0R1R0G100390-1-2 22.Dec.2014 Rev.003 Datasheet BR25A256-3M AC Characteristics (Ta=-40°C to +105°C, 2.5V≤Vcc
BR25A256FVT-3MGE2 价格&库存

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BR25A256FVT-3MGE2
    •  国内价格 香港价格
    • 1+8.500771+1.02704
    • 10+7.1299410+0.86142
    • 50+6.3106950+0.76244
    • 100+5.62122100+0.67914
    • 500+5.61311500+0.67816
    • 1000+5.596881000+0.67620
    • 2000+5.564442000+0.67228
    • 4000+5.540104000+0.66934

    库存:2265

    BR25A256FVT-3MGE2
      •  国内价格 香港价格
      • 1+8.500771+1.02704
      • 10+7.1299410+0.86142
      • 50+6.3106950+0.76244
      • 100+5.62122100+0.67914
      • 500+5.61311500+0.67816
      • 1000+5.596881000+0.67620
      • 2000+5.564442000+0.67228
      • 4000+5.540104000+0.66934

      库存:3000

      BR25A256FVT-3MGE2
        •  国内价格 香港价格
        • 1+8.500771+1.02704
        • 10+7.1299410+0.86142
        • 50+6.3106950+0.76244
        • 100+5.62122100+0.67914
        • 500+5.61311500+0.67816
        • 1000+5.596881000+0.67620
        • 2000+5.564442000+0.67228
        • 4000+5.540104000+0.66934

        库存:5