BR25A512FVT-3MGE2

Datasheet Serial EEPROM Series Automotive EEPROM 105°C Operation SPI BUS EEPROM BR25A512-3M General Description BR25A512-3M is a 512Kbit Serial EEPROM of SPI BUS Interface. Features Packages W(Typ) x D(Typ) x H(Max) High Speed Clock Action up to 10MHz (Max) Wait Function by HOLDB Terminal Part or Whole of Memory Arrays Settable as Read only Memory Area by Program  2.5V to 5.5V Single Power Source Operation Most Suitable for Battery Use  Up to 128 Bytes in Page Write Mode  For SPI Bus Interface (CPOL, CPHA) = (0, 0), (1, 1)  Self-timed Programming Cycle  Low Current Consumption  At Write Action (5V) : 0.7mA (Typ)  At Read Action (5V) : 2.4mA (Typ)  At Standby Action (5V) : 0.1µA (Typ)  Address Auto Increment Function at Read Action  Prevention of Write Mistake  Write Prohibition at Power On  Write Prohibition by Command Code (WRDI)  Write Prohibition by WPB Pin  Write Prohibition Block Setting by Status Registers (BP1, BP0)  Prevention of Write Mistake at Low Voltage  More than 100 years Data Retention  More than 1 Million Write Cycles  Bit Format 64K×8  Initial Delivery Data Memory Array : FFh Status Register : WPEN, BP1, BP0 : 0    ○Product structure：Silicon monolithic integrated circuit www.rohm.com ©2015 ROHM Co., Ltd. All rights reserved. TSZ22111･14･001 SOP8 5.00mm x 6.20mm x 1.71mm SOP- J8 4.90mm x 6.00mm x 1.65mm TSSOP-B8 3.00mm x 6.40mm x 1.20mm Figure 1. ○This product is not designed protection against radioactive rays 1/29 TSZ02201-0R2R0G100750-1-2 6.Oct.2015 Rev.001 Datasheet BR25A512-3M Absolute Maximum Ratings (Ta=25°C) Parameter Supply Voltage Power Dissipation Storage Temperature Operating Temperature Input Voltage / Output Voltage Junction Temperature Electrostatic discharge voltage (human body model) Symbol VCC Unit V Tstg Topr Ratings -0.3 to +6.5 0.45 (SOP8) 0.45 (SOP-J8) 0.33 (TSSOP-B8) - 65 to +150 - 40 to +105 ‐ - 0.3 to Vcc+1.0 V Tjmax 150 °C VESD -4000 to +4000 V Pd Remarks When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. W When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. When using at Ta=25°C or higher 3.3mW to be reduced per 1°C. °C °C The Max value of Input Voltage/Output Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Input Voltage/Output Voltage is not under -1.0V. Junction temperature at the storage condition Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory Cell Characteristics (Ta=25°C, Vcc=2.5V to 5.5V) Parameter Limits Typ - Min 1,000,000 150,000 100 20 Write Cycles (Note1) Data Retention (Note1) Max - Unit Condition Times Times Years Years Ta≤25°C Ta≤105°C Ta≤25°C Ta≤105°C (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Power Source Voltage Input Voltage Bypass capacitor Ratings Symbol Min 2.5 0 0.1 Vcc VIN C Max 5.5 VCC - Unit V V µF Input / Output Capacity (Ta=25°C, frequency=5MHz) Parameter Input Capacity (Note1) Output Capacity (Note1) Symbol CIN COUT Min - Max 8 8 Unit pF Conditions VIN=GND VOUT=GND (Note1) Not 100% TESTED. DC Characteristics (Unless otherwise specified, Ta=-40°C to +105°C, Vcc=2.5V to 5.5V) VIH VIL VOL VOH ILI ILO Min 0.7 x Vcc -0.3 (Note1) 0 Vcc-0.2 -1 -1 Limits Typ - Max Vcc+1.0 0.3 x Vcc 0.4 Vcc 1 1 ICC1 - - 1.5 mA ICC2 - - 2 mA Supply Current (Read) ICC3 - - 4 mA Standby Current ISB - - 10 µA Parameter Input High Voltage Input Low Voltage Output Low Voltage Output High Voltage Input Leakage Current Output Leakage Current Symbol Unit V V V V µA µA Supply Current (Write) Conditions IOL=3.0mA IOH=-2.0mA VIN=0 to Vcc VOUT=0 to Vcc, CSB=Vcc Vcc=2.5V, fSCK=5MHz, tE/W=5ms Byte Write, Page Write, Write Status Register Vcc=5.5V, fSCK=10MHz, tE/W=5ms Byte Write, Page Write, Write Status Register Vcc=5.5V, fSCK=10MHz, SO=OPEN Read, Read Status Register VIH/VIL=0.9Vcc/0.1Vcc Vcc=5.5V, SO=OPEN CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or GND (Note1) When the pulse width is 50ns or less, it is -1.0V. www.rohm.com ©2015 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 2/29 TSZ02201-0R2R0G100750-1-2 6.Oct.2015 Rev.001 Datasheet BR25A512-3M AC Characteristics (Ta=-40°C to +105°C, 2.5V≤Vcc