Datasheet
Serial EEPROM Series Standard EEPROM
SPI BUS EEPROM
BR25G1M-3
General Description
BR25G1M-3 is a 1Mbit Serial EEPROM of SPI BUS Interface.
Features
Packages W(Typ) x D(Typ) x H(Max)
High Speed Clock Action up to 10MHz (Max)
Wait Function by HOLDB Terminal
Part or Whole of Memory Arrays Settable as
Read only Memory Area by Program
1.8V to 5.5V Single Power Source Operation Most
Suitable for Battery Use.
Up to 256 Bytes in Page Write Mode.
For SPI Bus Interface (CPOL, CPHA) = (0, 0), (1, 1)
Self-timed Programming Cycle
Low Current Consumption
¾ At Write Action (5V)
: 0.7mA (Typ)
¾ At Read Action (5V)
: 2.4mA (Typ)
¾ At Standby Action (5V) : 0.1µA (Typ)
Address Auto Increment Function at Read Action
Prevention of Write Mistake
¾ Write Prohibition at Power On
¾ Write Prohibition by Command Code (WRDI)
¾ Write Prohibition by WPB Pin
¾ Write Prohibition Block Setting by Status Registers
(BP1, BP0)
¾ Prevention of Write Mistake at Low Voltage
More than 100 years Data Retention.
More than 1 Million Write Cycles.
Bit Format 128K×8
Initial Delivery Data
Memory Array: FFh
Status Register: WPEN, BP1, BP0 : 0
○Product structure:Silicon monolithic integrated circuit
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
SOP8
SOP- J8
5.00mm x 6.20mm x 1.71mm
4.90mm x 6.00mm x 1.65mm
Figure 1.
○This product is not designed protection against radioactive rays
1/29
TSZ02201-0R2R0G100690-1-2
06.Oct.2014 Rev.002
Datasheet
BR25G1M-3
Absolute Maximum Ratings (Ta=25°C)
Parameter
Supply Voltage
Power Dissipation.
Storage Temperature
Operating Temperature
Input Voltage /
Output Voltage
Junction Temperature
Electrostatic discharge
voltage
(human body model)
Symbol
VCC
Unit
V
Tstg
Topr
Ratings
-0.3 to +6.5
0.45 (SOP8)
0.45 (SOP-J8)
- 65 to +150
- 40 to +85
‐
- 0.3 to Vcc+1.0
V
Tjmax
150
°C
VESD
-4000 to +4000
V
Pd
W
Remarks
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
When using at Ta=25°C or higher 4.5mW to be reduced per 1°C.
°C
°C
The Max value of Input Voltage/Output Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of Input
Voltage/Output Voltage is not under -1.0V.
Junction temperature at the storage condition
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Memory Cell Characteristics (Ta=25°C, Vcc=1.8V to 5.5V)
Parameter
Min
1,000,000
100
(Note1)
Write Cycles
Data Retention (Note1)
Limits
Typ
-
Max
-
Unit
Times
Years
(Note1) Not 100% TESTED
Recommended Operating Ratings
Parameter
Power Source Voltage
Input Voltage
Symbol
Vcc
VIN
Ratings
1.8 to 5.5
0 to Vcc
Unit
V
Input / Output Capacity (Ta=25°C, frequency=5MHz)
Parameter
Input Capacity (Note1)
Output Capacity (Note1)
Symbol
CIN
COUT
Min
-
-
Max
8
8
Unit
pF
Conditions
VIN=GND
VOUT=GND
(Note1) Not 100% TESTED.
www.rohm.com
©2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
2/29
TSZ02201-0R2R0G100690-1-2
06.Oct.2014 Rev.002
Datasheet
BR25G1M-3
DC Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.8V to 5.5V)
Parameter
Input High Voltage1
Input Low Voltage1
Output Low Voltage1
Output Low Voltage2
Output High Voltage1
Output High Voltage2
Input Leakage Current
Output Leakage Current
Supply Current (Write)
Supply Current (Read)
Standby Current
VIH1
VIL1
VOL1
VOL2
VOH1
VOH2
ILI
ILO
Min
0.7 x Vcc
-0.3 (Note1)
0
0
Vcc-0.2
Vcc-0.2
-1
-1
Limits
Typ
-
-
-
-
-
-
-
-
Max
Vcc+1.0
0.3 x Vcc
0.4
0.2
Vcc
Vcc
1
1
ICC1
-
-
3
mA
ICC2
-
-
3
mA
ICC3
-
-
3
mA
ICC4
-
-
0.7
mA
ICC5
-
-
1
mA
ICC6
-
-
3
mA
ICC7
-
-
4
mA
ISB
-
-
1
µA
Symbol
Unit
Conditions
V
V
V
V
V
V
µA
µA
1.8≤Vcc≤5.5V
1.8≤Vcc≤5.5V
IOL=3.0mA, 2.5≤Vcc≤5.5V
IOL=1.0mA, 1.8≤Vcc
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