BR25G512FVT-3GE2

Datasheet Serial EEPROM Series Standard EEPROM SPI BUS EEPROM BR25G512-3 General Description BR25G512-3 is a 512Kbit serial EEPROM of SPI BUS interface. Packages W(Typ) x D(Typ) x H(Max) Features High Speed Clock Action up to 10MHz (Max) Wait Function by HOLDB Terminal Part or Whole of Memory Arrays Settable as Read only Memory Area by Program  1.8V to 5.5V Single Power Source Operation Most Suitable for Battery Use.  UP to 128Byte in Page Write Mode.  For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)  Self-timed Programming Cycle  Low Current Consumption  At Write Action (5V) : 0.7mA (Typ)  At Read Action (5V) : 2.4mA (Typ)  At Standby Action (5V) : 0.1µA (Typ)  Address Auto Increment Function at Read Action  Prevention of Write Mistake  Write Prohibition at Power On  Write Prohibition by Command Code (WRDI)  Write Prohibition by WPB Pin  Write Prohibition Block Setting by Status Registers (BP1, BP0)  Prevention of Write Mistake at Low Voltage  More than 100 years Data Retention.  More than 1 Million Write Cycles.  Bit Format 64K×8  Initial Delivery Data Memory Array: FFh Status Register: WPEN, BP1, BP0 : 0    ○Product structure：Silicon monolithic integrated circuit www.rohm.com ©2015 ROHM Co., Ltd. All rights reserved. TSZ22111･14･001 SOP8 5.00mm x 6.20mm x 1.71mm SOP- J8 4.90mm x 6.00mm x 1.65mm TSSOP-B8 3.00mm x 6.40mm x 1.20mm Figure 1. ○This product is not designed protection against radioactive rays 1/30 TSZ02201-0R2R0G100740-1-2 6.Oct.2015 Rev.001 Datasheet BR25G512-3 Absolute Maximum Ratings (Ta=25°C) Parameter Supply Voltage Symbol VCC Power Dissipation Pd Storage Temperature Operating Temperature Input Voltage / Output Voltage Junction temperature Electrostatic discharge voltage (human body model) Unit V Tstg Topr Ratings -0.3 to +6.5 0.45 (SOP8) 0.45 (SOP-J8) 0.33 (TSSOP-B8) - 65 to +150 - 40 to +85 ‐ - 0.3 to Vcc+1.0 V Tjmax 150 °C VESD -4000 to +4000 V Remarks When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. W When using at Ta=25°C or higher 4.5mW to be reduced per 1°C. When using at Ta=25°C or higher 3.3mW to be reduced per 1°C. °C °C The Max value of Terminal Voltage is not over 6.5V. When the pulse width is 50ns or less, the Min value of Terminal Voltage is not under -1.0V. Junction temperature at the storage condition Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. Memory Cell Characteristics (Ta=25°C, Vcc=1.8V to 5.5V) Parameter Min 1,000,000 100 (Note1) Write Cycles Data Retention (Note1) Limits Typ - Max - Unit Times Years (Note1) Not 100% TESTED Recommended Operating Ratings Parameter Power Source Voltage Input Voltage Symbol Vcc VIN www.rohm.com ©2015 ROHM Co., Ltd. All rights reserved. TSZ22111･15･001 Ratings 1.8 to 5.5 0 to Vcc 2/30 Unit V TSZ02201-0R2R0G100740-1-2 6.Oct.2015 Rev.001 Datasheet BR25G512-3 Electrical Characteristics (Unless otherwise specified, Ta=-40°C to +85°C, Vcc=1.8V to 5.5V) Parameter Input High Voltage1 Input Low Voltage1 Output Low Voltage1 Output Low Voltage2 Output High Voltage1 Output High Voltage2 Input Leakage Current Output Leakage Current VIH1 VIL1 VOL1 VOL2 VOH1 VOH2 ILI ILO Min 0.7 x Vcc -0.3 (Note1) 0 0 Vcc-0.2 Vcc-0.2 -1 -1 Limits Typ － － － － － － － － Max Vcc+1.0 0.3 x Vcc 0.4 0.2 Vcc Vcc 1 1 ICC1 － － ICC2 － ICC3 Symbol Unit V V V V V V µA µA 1.8≤Vcc≤5.5V 1.8≤Vcc≤5.5V IOL=3.0mA, 2.5≤Vcc≤5.5V IOL=1.0mA, 1.8≤Vcc