BR25H128F-2CE2

Datasheet Serial EEPROM Series Automotive EEPROM 125℃ ℃ Operation SPI BUS EEPROM BR25H128-2C ●General Description BR25H128-2C is a serial EEPROM of SPI BUS interface method. ●Features High speed clock action up to 10MHz (Max.) Wait function by HOLDB terminal. Part or whole of memory arrays settable as read only memory area by program. 2.5V to 5.5V single power source action most suitable for battery use. Page write mode useful for initial value write at factory shipment. For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) Self-timed programming cycle. Low Supply Current At write operation (5V) : 1.2mA (Typ.) At read operation (5V) : 1.0mA (Typ.) At standby operation (5V) : 0.1µA (Typ.) Address auto increment function at read operation Prevention of write mistake Write prohibition at power on. Write prohibition by command code (WRDI). Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0). Prevention of write mistake at low voltage. ●Page write Number of pages Product Number ●BR25H128-2C Capacity Bit Format 128Kbit 16Kx8 SOP8, SOP-J8 Package Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0 More than 100 years data retention. More than 1 million write cycles. AEC-Q100 Qualified. ●Package SOP8 5.00mm x 6.20mm x 1.71mm SOP-J8 4.90mm x 6.00mm x 1.65mm 64 Byte BR25H128-2C Product Number Supply Voltage SOP8 SOP-J8 BR25H128-2C 2.5V to 5.5V ● ● ○Product structure：Silicon monolithic integrated circuit www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 14・ ・ 001 ○This product is not designed protection against radioactive rays 1/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Absolute maximum ratings (Ta=25°C) Parameter Supply Voltage Symbol Limits Unit VCC -0.3 to +6.5 V 0.56(SOP8) Permissible Dissipation *1 W Pd 0.56(SOP-J8) *2 Storage Temperature Range Tstg -65 to +150 °C Operating Temperature Range Topr -40 to +125 °C － -0.3 to VCC+0.3 V VESD -6000 to +6000 V Terminal Voltage Electrostatic Discharge Voltage (Human Body Model) ・When using at Ta=25℃ or higher, 4.5mW (*1,*2)to be reduced per 1℃ Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. ●Memory cell characteristics (VCC=2.5V to 5.5V) Limits Parameter Write Cycles *3 Data Retention *3 Unit Condition Min. Typ. Max. 1,000,000 － － Cycles Ta≦85°C 500,000 － － Cycles Ta≦105°C 300,000 － － Cycles Ta≦125°C 100 － － Years Ta≦25°C 60 － － Years Ta≦105°C 50 － － Years Ta≦125°C *3: Not 100% TESTED ●Recommended Operating Ratings Parameter Supply Voltage Symbol Limits VCC 2.5 to 5.5 Vin 0 to VCC Unit V Input Voltage ●Input / output capacity (Ta=25°C, frequency=5MHz) Parameter Input Capacity *4 Symbol Conditions Min Max CIN VIN=GND － 8 COUT VOUT=GND － 8 Unit pF Output Capacity *4 *4: Not 100% TESTED www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 2/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●DC characteristics (Unless otherwise specified, Ta=-40°C to +125°C, VCC=2.5V to 5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Input High Voltage VIH 0.7xVCC － Input Low Voltage VIL -0.3 － Output Low Voltage VOL 0 － Output High Voltage VOH VCC-0.5 ILI Input Leakage Current Output Leakage Current Max. VCC +0.3 0.3x VCC V 2.5V≦VCC≦5.5V V 2.5V≦VCC≦5.5V 0.4 V IOL=2.1mA － VCC V IOH=-0.4mA -2 － +2 µA VIN=0V to VCC ILO -2 － +2 µA VOUT=0V to VCC, CSB=VCC ICC1 － － 2.5 VCC=2.5V,fSCK=5MHz, tE/W=4ms mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN Byte write, Page write, Write status register ICC2 － － 5.5 VCC=5.5V,fSCK=5 or 10 MHz, tE/W=4ms mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN Byte write, Page write, Write status register ICC3 － － 1.5 VCC=2.5V,fSCK=5MHz mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN Read, Read status register ICC4 － － 2.0 VCC=5.5V,fSCK=5MHz mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN Read, Read status register ICC5 － － 4.0 VCC=5.5V,fSCK=10MHz mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN Read, Read status register ISB － － 10 VCC=5.5V µA CSB=HOLDB=WPB=VCC, SCK=SI=VCC or =GND, SO=OPEN Supply Current (WRITE) Supply Current (READ) Standby Current www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 3/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●AC characteristics (Ta=-40°C to +125°C, unless otherwise specified, load capacity CL1=100pF) Parameter 2.5V≦VCC≦5.5V Symbol 4.5V≦VCC≦5.5V Min. Typ. Max. Min. Typ. Max. Unit SCK Frequency fSCK － － 5 － － 10 MHz SCK High Time tSCKWH 85 － － 40 － － ns SCK Low Time tSCKWL 85 － － 40 － － ns CSB High Time tCS 85 － － 40 － － ns CSB Setup Time tCSS 90 － － 30 － － ns CSB Hold Time tCSH 85 － － 30 － － ns SCK Setup Time tSCKS 90 － － 30 － － ns SCK Hold Time tSCKH 90 － － 30 － － ns SI Setup Time tDIS 20 － － 10 － － ns SI Hold Time tDIH 30 － － 10 － － ns Data Output Delay Time1 Data Output Delay Time2 tPD1 － － 60 － － 40 ns (CL2=30pF) tPD2 － － 50 － － 30 ns Output Hold Time tOH 0 － － 0 － － ns Output Disable Time tOZ － － 100 － － 40 ns tHFS 0 － － 0 － － ns tHFH 40 － － 30 － － ns tHRS 0 － － 0 － － ns tHRH 70 － － 30 － － ns tHOZ － － 100 － － 40 ns tHPD － － 70 － － 40 ns tRC － － 1 － － 1 µs SCK Fall Time tFC － － 1 － － 1 µs OUTPUT Rise Time*1 tRO － － 40 － － 40 ns OUTPUT Fall Time*1 tFO － － 40 － － 40 ns Write Time tE/W － － 4 － － 4 ms HOLDB Setting Setup Time HOLDB Setting Hold Time HOLDB Release Setup Time HOLDB Release Hold Time Time from HOLDB to Output High-Z Time from HOLDB to Output Change SCK Rise Time*1 *1 *1 NOT 100% TESTED ●AC measurement conditions Parameter Symbol Limits Min. Typ. Max. Unit Input Voltage Load Capacity 1 CL1 － － 100 pF Load Capacity 2 CL2 － － 30 pF Input Rise Time － － － 50 ns Input Fall Time － － － 50 ns Input Voltage Input / Output Judgment Voltage － 0.2VCC/0.8VCC － 0.3VCC/0.7VCC www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 V V 4/30 Input/Output judgement voltage 0.8Vcc 0.7Vcc 0.3Vcc 0.2Vcc Figure 1. Input/Output judgment voltage TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Serial Input / Output Timing tCSS tCS CSB tSCKS tRC tSCKWH tSCKWL tFC SCK tDIS tDIH SI High-Z SO Figure 2. Input timing SI is taken into IC inside in sync with data rise edge of SCK. Input address and data from the most significant bit MSB. tCS tCSH tSCKH CSB SCK SI tPD tRO,tFO tOH tOZ High-Z SO Figure 3. Input / Output timing SO is output in sync with data fall edge of SCK. Data is output from the most significant bit MSB. "H" CSB "L" tHFS tHFH tHRS tHRH SCK tDIS SI n n+1 tHOZ SO n-1 tHPD High-Z Dn+1 Dn Dn-1 Dn HOLDB Figure 4. HOLD timing ●Block diagram CSB VOLTAGE INSTRUCTION DECODE DETECTION CONTROL CLOCK SCK GENERATION SI WRITE HIGH VOLTAGE INHIBITION GENERATOR INSTRUCTION REGISTER HOLDB STATUS REGISTER ADDRESS REGISTER 14bit ADDRESS DECODER 14bit 128K EEPROM WPB DATA REGISTER READ/WRITE 8bit AMP 8bit SO Figure 5. Block diagram www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 5/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Pin Configuration VCC HOLDB SCK SI BR25H128-2C CSB SO WPB GND Figure 6. Pin assignment diagram ●Pin Descriptions Terminal number Terminal name Input /Output 1 CSB Input Chip select input 2 SO Output Serial data output 3 WPB Input 4 GND － 5 SI Input Start bit, ope code, address, and serial data input 6 SCK Input Serial clock input 7 HOLDB Input Hold input Command communications may be suspended temporarily (HOLD status) 8 VCC － www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 Function Write protect input Write status register command is prohibited. All input / output reference voltage, 0V Power source to be connected 6/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Typical Performance Curves 6 6 Ta= -40℃ Ta= 25℃ Ta= 125℃ Ta= -40℃ Ta= 25℃ Ta= 125℃ 5 INPUT LOW VOLTAGE : VIL ［V］ INPUT HIGH VOLTAGE :VIH ［V］ 5 4 3 SPEC 2 4 3 2 SPEC 1 1 0 0 0 1 2 3 4 5 6 0 1 SUPPLY VOLTAGE : VCC［V］ Figure 7. Input High Voltage VIH (CSB,SCK,SI,HOLDB,WPB) 3 4 5 6 Figure 8. Input Low Voltage VIL (CSB,SCK,SI,HOLDB,WPB) 1 3 Ta= -40℃ Ta= 25℃ Ta= 125℃ 2.5 OUTPUT HIGH VOLTAGE : VOH ［V］ 0.8 OUTPUT LOW VOLTAGE : VOL［V］ 2 SUPPLY VOLTAGE : VCC［V］ 0.6 SPEC 0.4 SPEC 2 Ta= -40℃ Ta= 25℃ Ta= 125℃ 1.5 1 0.2 0.5 0 0 0 1 2 3 4 5 6 -1.2 OUTPUT LOW CURRENT : IOL［mA］ Figure 9. Output Low Voltage -0.8 -0.6 -0.4 -0.2 0 OUTPUT HIGH CURRENT : IOH［mA］ VOL, IOL (Vcc=2.5V) www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 -1 Figure 10. Output High Voltage 7/30 VOH, IOH (Vcc=2.5V) TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C 3.0 3 2.5 3 OUTPUT LEAK CURRENT : ILO ［μA ］ INPUT LEAKAGE CURRENT: ILI［μA］ ●Typical Performance Curves‐Continued SPEC 2.0 Ta= -40℃ 1.5 Ta= 25℃ Ta= 125℃ 1.0 SPEC 2 2 Ta= -40℃ Ta= 25℃ Ta= 125℃ 1 1 0.5 0.0 0 0 1 2 3 4 5 6 0 1 SUPPLY VOLTAGE : VCC [V] 2 3 4 5 6 SUPPLY VOLTAGE : Vcc （V］ Figure 11. Input Leakage Current ILI (CSB,SCK,SI,HOLDB,WPB) Figure 12. Output Leakage Current ILO(SO)(Vcc=5.5V) 6 2.5 SPEC Ta= -40℃ Ta= 25℃ 2 Ta= -40℃ SUPPLY CURRENT (READ) : Icc3, 4 ［mA］ SUPPLY CURRENT (WRITE) : Icc1, 2［mA］ SPEC Ta= 125℃ 5 Ta= 25℃ Ta= 125℃ 4 3 SPEC 2 SPEC 1.5 1 0.5 1 0 0 0 1 2 3 4 5 0 6 SUPPLY VOLTAGE : VCC［V］ 2 3 4 5 6 SUPPLY VOLTAGE : VCC［V］ Figure 14. Supply Current (READ) ICC3,4 Figure 13. Supply Current (WRITE) ICC1,2 www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 1 8/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Typical Performance Curves‐Continued 5 12 SPEC Ta= -40℃ 10 Ta= 25℃ Ta= 125℃ SPEC STANDBY CURRENT : ISB ［μ A］ SUPPLY CURRENT : Icc5 ［mA］ 4 3 2 8 Ta= -40℃ Ta= 25℃ Ta= 125℃ 6 4 1 2 0 0 0 1 2 3 4 5 6 0 1 2 SUPPLY VOLTAGE : VCC［V］ 3 4 5 6 SUPPLY VOLTAGE : VCC［V］ Figure 15. Supply Current (READ) ICC5 Figure.16 100 Standby Current ISB 100 SPEC SCK HIGH TIME : tSCKWH［ns］ SCK FREQUENCY : fSCK [MHz] 80 10 SPEC SPEC Ta= -40℃ Ta= 25℃ 1 Ta= -40℃ Ta= 25℃ Ta= 125℃ 60 SPEC 40 Ta= 125℃ 20 0.1 0 0 1 2 3 4 5 6 SUPPLY VOLTAGE : VCC［V］ Figure 17. SCK Frequency www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 0 1 2 3 4 5 SUPPLY VOLTAGE : VCC［V］ Figure 18. SCK High Time tSCKWH fSCK 9/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 6 Datasheet BR25H128-2C ●Typical Performance Curves‐Continued 100 100 SPEC SPEC 80 CSB HIGH TIME : tCS［ns］ SCK LOW TIME : tSCKWL［ns］ 80 Ta= -40℃ Ta= 25℃ Ta= 125℃ 60 SPEC 40 Ta= -40℃ Ta= 25℃ Ta= 125℃ 60 SPEC 40 20 20 0 0 0 1 2 3 4 5 0 6 1 2 3 4 5 6 5 6 SUPPLY VOLTAGE : VCC［V］ SUPPLY VOLTAGE : VCC［V］ Figure 20. CSB High Time tCS Figure 19. SCK Low Time tSCKWL 100 100 SPEC SPEC 80 80 60 CSB HOLD TIME : tCSH ［ns ］ CSB SETUP TIME : tCSS ［ns ］ Ta= -40℃ Ta= 25℃ Ta= -40℃ Ta= 25℃ Ta= 125℃ 40 SPEC 20 Ta= 125℃ 60 40 SPEC 20 0 0 0 1 2 3 4 5 6 SUPPLY VOLTAGE : VCC［V］ 1 2 3 4 SUPPLY VOLTAGE : VCC［V］ Figure 22. CSB Hold Time tCSH Figure 21. CSB Setup Time tCSS www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 0 10/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Typical Performance Curves‐Continued 50 50 40 40 Ta= -40℃ Ta= 25℃ Ta= 125℃ Ta= 125℃ SI HOLD TIME : tDIH ［ ns］ SI SETUP TIME : tDIS［ns］ Ta= -40℃ Ta= 25℃ 30 SPEC 20 SPEC 30 20 SPEC SPEC 10 10 0 0 0 1 2 3 4 5 6 0 1 SUPPLY VOLTAGE : VCC［V］ Figure 23. SI Setup Time tDIS 3 4 5 6 Figure 24. SI Hold Time tDIH 100 100 Ta= -40℃ Ta= 25℃ Ta= 125℃ 80 DATA OUTPUT DELAY TIME2 : tPD2 ［ns］ 80 DATA OUTPUT DELAY TIME : tPD1 ［ ns］ 2 SUPPLY VOLTAGE : VCC［V］ SPEC 60 SPEC 40 Ta= -40℃ Ta= 25℃ Ta= 125℃ 60 SPEC 40 SPEC 20 20 0 0 0 1 2 3 4 5 0 6 2 3 4 5 6 Figure 26. Data Output Delay Time tPD2 (CL=30pF) Figure 25. Data Output Delay Time tPD1 (CL=100pF) www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 1 SUPPLY VOLTAGE : VCC［V］ SUPPLY VOLTAGE : VCC［V］ 11/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Typical Performance Curves‐Continued 120 50 SPEC SPEC 100 ［ns ］ Ta= -40℃ Ta= 25℃ 80 HOLDB SETTING HOLD TIME : tHFH OUTPUT DISABLE TIME : tOZ ［ ns］ 40 Ta= 125℃ 60 SPEC 40 Ta= -40℃ Ta= 25℃ 30 SPEC Ta= 125℃ 20 10 20 0 0 0 1 2 3 4 5 6 0 1 SUPPLY VOLTAGE : VCC［V］ 2 3 4 5 6 SUPPLY VOLTAGE : VCC［V］ Figure 28. HOLDB Setting Hold Time tHFH Figure 27.Output Disable Time tOZ 100 120 ［ns］ SPEC SPEC TIME FROM HOLDB TO OUTPUT HIGH-Z : tHOZ HOLDB RELEASE HOLD TIME : tHRH ［ns ］ 80 60 Ta= -40℃ Ta= 25℃ Ta= 125℃ 40 SPEC 20 0 90 Ta= -40℃ Ta= 25℃ Ta= 125℃ 60 SPEC 30 0 0 1 2 3 4 5 6 SUPPLY VOLTAGE : VCC［V］ 1 2 3 4 5 6 SUPPLY VOLTAGE : VCC［V］ Figure 30. Time from HOLDB to Output High-Z Figure 29. HOLDB Release Hold Time tHRH www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 0 12/30 tHOZ TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Typical Performance Curves‐Continued 100 Ta= -40℃ Ta= 25℃ Ta= 125℃ 80 Ta= -40℃ Ta= 25℃ 80 SPEC Ta= 125℃ OUTPUT RISE TIME : tRO ［ns］ TIME FROM HOLDB TO OUTPUT CHANGE : tHPD ［ns］ 100 60 SPEC 40 60 SPEC 40 20 20 0 0 0 1 2 3 4 5 6 0 1 SUPPLY VOLTAGE : VCC［V］ Figure 31. Time from HOLDB to Output Change 3 4 5 6 Figure 32. Output Rise Time tRO tHPD 100 8 Ta= -40℃ Ta= 25℃ Ta= 125℃ Ta= -40℃ Ta= 25℃ 80 6 WRITE TIME : tE/W ［ms］ Ta= 125℃ OUTPUT FALL TIME : tFO ［ ns］ 2 SUPPLY VOLTAGE : VCC［V］ 60 SPEC 40 SPEC 4 2 20 0 0 0 1 2 3 4 5 6 1 2 3 4 5 6 Figure 34. Write Cycle Time tE/W Figure 33. Output Fall Time tFO www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 0 SUPPLY VOLTAGE : VCC［V］ SUPPLY VOLTAGE : VCC［V］ 13/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Features ○Status registers This IC has status registers. The status registers are of 8 bits and express the following parameters. BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore are valid even when power source is turned off. Number of data rewrite times and data hold time are same as characteristics of the EEPROM. WEN can be set by write enable command and write disable command. WEN becomes write disable status when power source is turned off. R/B is for write confirmation, therefore cannot be set externally. The value of status register can be read by read status command. ●Status registers Product number bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 BR25H128-2C WPEN 0 0 0 BP1 BP0 WEN bit Memory location WPEN EEPROM bit 0 ―― R /B Function Contents WPB pin enable / disable designation bit This enables / disables the functions of WPB pin. WPEN=0=invalid , W PEN=1=valid BP1 BP0 EEPROM EEPROM write disable block designation bit This designates the write disable area of EEPROM. Write designation areas of product numbers are shown below. WEN Register Write and write status register write enable / disable status confirmation bit This confirms prohibited status or permitted status of the write and the write status register. WEN=0=prohibited , W EN=1=permitted ―― R /B Register Write cycle status (READY / BUSY) confirmation bit R/B=0=READY , R/B=1=BUSY This confirms READY status or BUSY status of the write cycle. ●Write disable block setting BP1 BP0 BR25H128-2C 0 0 None 0 1 3000h-3FFFh 1 0 2000h-3FFFh 1 1 0000h-3FFFh www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 14/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ○WPB pin By setting WPB=LOW, write command is prohibited. As for BR25H128-2C, only when WPEN bit is set “1”, the WPB pin functions become valid. And the write command to be disabled at this moment is WRSR. However, when write cycle is in execution, no interruption can be made. Product number BR25H128-2C WRSR WRITE Prohibition possible but WPEN bit “1” Prohibition impossible ○HOLDB pin By HOLDB pin, data transfer can be interrupted. When SCK=”0”, by making HOLDB from “1” into”0”, data transfer to EEPROM is interrupted. When SCK = “0”, by making HOLDB from “0” into “1”, data transfer is restarted. ●Command mode Command Contents Ope codes WREN Write enable Write enable command 0000 0110 WRDI Write disable Write disable command 0000 0100 READ Read Read command 0000 0011 WRITE Write Write command 0000 0010 Status register read command 0000 0101 Status register write command 0000 0001 RDSR WRSR Read status register Write status register www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 15/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Timing Chart 1. Write enable (WREN) / disable (WRDI) cycle WREN (WRITE ENABLE): Write enable CSB 0 SCK 1 0 SI 2 0 3 0 4 0 5 0 6 1 7 1 0 High-Z SO Figure 35. Write enable command WRDI (WRITE DISABLE): Write disable CSB 0 SCK 1 0 SI 2 0 0 3 0 4 5 0 6 1 0 7 0 High-Z SO Figure 36. Write disable ○This IC has write enable status and write disable status. It is set to write enable status by write enable command, and it is set to write disable status by write disable command. As for these commands, set CSB LOW, and then input the respective ope codes. The respective commands accept command at the 7-th clock rise. Even with input over 7 clocks, command becomes valid. When to carry out write and write status register command, it is necessary to set write enable status by the write enable command. If write or write status register command is input in the write disable status, commands are cancelled. And even in the write enable status, once write and write status register command is executed. It gets in the write disable status. After power on, this IC is in write disable status. 2. Read command (READ) ～ ～ ～ ～ CSB ～ ～ 0 1 2 3 4 5 6 7 8 9 10 11 23 ～ ～ SCK 24 30 ～ ～ 0 0 0 0 0 1 1 ＊ ＊ A13 A12 A1 ～ ～ 0 ～ ～ SI A0 ～ ～ Product number BR25H128-2C ～ ～ SO High-Z D7 D6 Figure 37. Read command D2 D1 D0 Address length A13-A0 *=Don’t Care By read command, data of EEPROM can be read. As for this command, set CSB LOW, then input address after read ope code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 23 clock, and from D7 to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by continuing input of SCK, data of the next address can be read. Increment read can read all the addresses of EEPROM. After reading data of the most significant address, by continuing increment read, data of the most insignificant address is read. www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ ・ 15・ ・ 001 16/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C 3. Write command (WRITE) ～ ～ ～ ～ CSB ～ ～ 0 1 2 3 4 5 6 7 8 9 10 ～ ～ SCK 11 23 24 30 ～ ～ ～ ～ 0 0 0 0 0 1 0 ＊ ＊ A13 A12 A1 A0 D7 ～ ～ D6 D2 D1 Product number BR25H128-2C D0 ～ ～ SO 0 ～ ～ SI 31 High-Z ＊=Don't Care Address length A13-A0 Figure 38. Write command 0 6 1 7 0 9 8 * * 11 A13 A12 10 23 24 25 (8n+24)-8 (8n+24)-7 (8n+24)-2 (8n+24)-1 8n+24 30 31 32 A1 A0 D7 D6 ～ ～ 0 5 33 ～ ～ 0 4 ～ ～ 0 3 ～ ～ 0 2 CSB rising valid timing to start write operation ～ ～ D1 D0 D7 D6 D7 D6 D0 n= up to 64 bytes ～ ～ SO 0 1 ～ ～ ～ ～ SI 0 ～ ～ SCK ～ ～ ～ ～ ～ ～ CSB High-Z ＊=Don’t care Figure 39. N Byte page write command By write command, data of EEPROM can be written. As for this command, set CSB LOW, then input address and data after write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of EEPROM requires time of tE/W (Max 4ms). During tE/W, other than status read command is not accepted. Start CSB after taking the last data (D0), and before the next SCK clock starts. At other timing, write command is not executed, and this write command is cancelled. This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input without starting CSB, data up to 64 bytes can be written for one tE/W. In page write, the insignificant 6 bit of the designated address is incremented internally at every time when data of 1 byte is input and data is written to respective addresses. When data of the maximum bytes or higher is input, address rolls over, and previously input data is overwritten. Write command is executed when CSB rises between the SCK clock rising edge to recognize the 8th bits of data input and the next SCK rising edge. At other timings the write command is not executed and cancelled (Figure.48 valid timing c). In page write, the CSB valid timing is every 8 bits. If CSB rises at other timings page write is cancelled together with the write command and the input data is reset. This column addresses are Top address of this page 64byte page0 page 1 page 2 ・ ・ ・ page m-1 *2 page m 0000h 0040h 0080h ・ ・ ・ n-127 n-63 0001h 0041h 0081h ・ ・ ・ n-126 n-62 0002h 0042h 0082h ・ ・ ・ n-125 n-61 ･･･ ･･･ ･･･ ・ ・ ・ ･･･ ･･･ 003Eh 007Eh 00FEh ・ ・ ・ n-65 n-1 003Fh 007Fh 00FFh ・ ・ ・ n-64 *1 n *1 *2 n=16383d=3FFFh : BR25H128-2C m=255 : BR25H128-2C This column addresses are the last address of this page Figure 40. EEPROM physical address for Page write command (64Byte) www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 17/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ○Example of Page write command No. Addresses of Page0 0000h 0001h 0002h ････ 003Eh 003Fh ① Previous data 00h 01h 02h ････ 3Eh 3Fh ② 2 bytes input data AAh 55h - ････ - - ③ After No.② AAh 55h 02h ････ 3Eh 3Fh AAh 55h AAh ････ AAh 55h ④ 66 byte input data FFh 00h - ････ - - FFh 00h AAh ････ AAh 55h ⑤ After No.④ a：In case of input the data of No.② which is 2 bytes page write command for the data of No.①, EEPROM data changes like No.③. b：In case of input the data of No.④ which is 66 bytes page write command for the data of No.①, EEPROM data changes like No.⑤. c：In case of a or b, when write command is cancelled, EEPROM data keep No.①. In page write command, when data is set to the last address of a page (e.g. address “007Fh” of page 1), the next data will be set to the top address of the same page (e.g. address “0040h” of page 1). This is why page write address increment is available in the same page. As a reference, if of 64 bytes, page write command is executed for 2 bytes the data of the other 62 bytes without addresses will not be changed. www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 18/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C 4. Status register write / read command CSB SCK 0 SI 0 1 2 0 0 3 4 0 5 0 6 0 0 7 1 8 9 bit7 bit6 WPEN ＊ 10 bit5 ＊ 11 bit4 12 13 bit3 14 bit2 BP1 BP0 ＊ 15 bit1 bit0 ＊ ＊ High-Z SO ＊=Don't care Figure 41. Status register write command Write status register command can write status register data. The data can be written by this command are 3 bits, that is, WPEN (bit7), BP1 (bit3) and BP0 (bit2) among 8 bits of status register. By BP1 and BP0, write disable block of EEPROM can be set. As for this command, set CSB LOW, and input ope code of write status register, and input data. Then, by making CSB HIGH, EEPROM starts writing. Write time requires time of tE/W as same as write. As for CSB rise, start CSB after taking the last data bit (bit0), and before the next SCK clock starts. At other timing, command is cancelled. Write disable block is determined by BP1 and BP0, and the block can be selected from 1/4 of memory array, 1/2, and entire memory array. (Refer to the write disable block setting table.) To the write disabled block, write cannot be made, and only read can be made. * CSB SCK SI SO 0 0 1 0 2 0 3 0 4 0 High-Z 5 1 6 0 7 8 9 10 11 12 13 14 15 1 bit7 bit6 bit5 bit4 WPEN 0 0 0 bit3 bit2 BP1 BP0 bit1 bit0 WEN R/B Figure 42. Status register read command www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 19/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●At standby ○Current at standby Set CSB “H”, and be sure to set SCK, SI, WPB, HOLDB input “L” or “H”. Do not input intermediate electric potential. ○Timing As shown in Figure.43, at standby, when SCK is “H”, even if CSB is fallen, SI status is not read at fall edge. SI status is read at SCK rise edge after fall of CSB. At standby and at power ON/OFF, set CSB “H” status. Even if CSB is fallen at SCK=SI=”H”, SI status is not read at that edge. CSB Command start here. SI is read. SCK 0 1 2 SI Figure 43. Operating timing ●WPB cancel valid area WPB is normally fixed to “H” or “L” for use, but when WPB is controlled so as to cancel write status register command and write command, pay attention to the following WPB valid timing. Write status register command is executed, by setting WPB = “L” in cancel valid area, command can be cancelled. The Data area (from 7clock fall to 16clock rise) becomes the cancel valid area. However, once write is started, any input cannot be cancelled. WPB input becomes Don’t Care, and cancellation becomes invalid. CSB SCK 6 7 15 Ope Code 16 tE/W Data write time Data Invalid Valid Invali d Figure 44. WPB valid timing (WRSR) CSB SCK 6 7 Ope code Invalid 8 31 23 Address Invalid 32 Data tE/W Data write time Invalid Invalid Figure 45. WPB valid timing (WRITE) ●HOLDB pin By HOLDB pin, command communication can be stopped temporarily (HOLD status). The HOLDB pin carries out command communications normally when it is HIGH. To get in HOLD status, at command communication, when SCK=LOW, set the HOLDB pin LOW. At HOLD status, SCK and SI become Don’t Care, and SO becomes high impedance (High-Z). To release the HOLD status, set the HOLDB pin HIGH when SCK=LOW. After that, communication can be restarted from the point before the HOLD status. For example, when HOLD status is made after A5 address input at read, after release of HOLD status, by starting A4 address input, read can be restarted. When in HOLD status, leave CSB LOW. When it is set CSB=HIGH in HOLD status, the IC is reset, therefore communication after that cannot be restarted. www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 20/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Method to cancel each command ○READ ・Method to cancel : cancel by CSB = “H” Ope code 8 bits Address Data 16 bits 8 bits Cancel available in all areas of read mode Figure 46 READ cancel valid timing ○RDSR ・Method to cancel : cancel by CSB = “H” Data Ope code 8 bits 8 bits Cancel available in all areas of rdsr mode Figure 47 RDSR cancel valid timing ○WRITE,PAGE WRITE a：Ope code, address input area. Cancellation is available by CSB=”H” b：Data input area (D7 to D1 input area) Cancellation is available by CSB=”H” c：Data input area (D0 area) When CSB is started, write starts. After CSB rise, cancellation cannot be made by any means. d：tE/W area. Cancellation is available by CSB = “H”. However, when write starts (CSB is started) in the area c, cancellation cannot be made by any means. And by inputting on SCK clock, cancellation cannot be made. In page write mode, there is write enable area at every 8 clocks. Ope code Address 8bits Data 16bits tE/W 8bits a b d c SCK SI D7 D6 D5 D4 D3 D2 D1 D0 c b Figure 48. WRITE cancel valid timing Note 1) If VCC is made OFF during write execution, designated address data is not guaranteed, therefore write it once again. Note 2) If CSB is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it is recommended to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher. ○WRSR a：From ope code to 15 rise. Cancel by CSB =”H”. b：From 15 clock rise to 16 clock rise (write enable area). When CSB is started, write starts. After CSB rise, cancellation cannot be made by any means. c：After 16 clock rise. Cancel by CSB=”H”. However, when write starts (CSB is started) in the area b, cancellation cannot be made by any means. And, by inputting on SCK clock, cancellation cannot be made. 14 SCK 15 D1 SI b c tE/W Data 8 bits 17 D0 a Ope code 16 8 bits a c b Figure 49. WRSR cancel valid timing Note 1) If VCC is made OFF during write execution, designated address data is not guaranteed, therefore write it once again Note 2) If CSB is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it is recommended to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher. ○WREN/WRDI a：From ope code to 7-th clock rise, cancel by CSB = “H”. b：Cancellation is not available when CSB is started after 7-th clock. 6 SCK 7 8 Ope code 8 bits a b Figure 50. WREN/WRDI cancel valid timing www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 21/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●High speed operation In order to realize stable high speed operations, pay attention to the following input / output pin conditions. ○Input terminal pull up, pull down resistance When to attach pull up, pull down resistance to EEPROM input terminal, select an appropriate value for the microcontroller VOL, IOL from VIL characteristics of this IC. ○Pull up resistance Microcontroller IOLM RPU VOLM VILE “L” output RPU≧ VCC-VOLM IOLM ･･･① VOLM≦ VILE ･･･② EEPROM Example) When Vcc=5V, VILE=1.5V, VOLM=0.4V, IOLM=2mA, from the equation ①, 5-0.4 RPU≧ -3 2×10 “L” input ・VILE :EEPROM VIL specifications ・VOLM :Microcontroller VOL specifications ・IOLM :Microcontroller IOL specifications ∴RPU≦ 2.3[kΩ] With the value of Rpu to satisfy the above equation, VOLM becomes 0.4V or lower, and with VILE (=1.5V), the equation ② is also satisfied. Figure 51. Pull up resistance And, in order to prevent malfunction, mistake write at power ON/OFF, be sure to make CSB pull up. ○Pull down resistance Microcontroller VOHM VOHM RPD≧ EEPROM ･･･③ IOHM VIHE VOHM≧ “H” output IOHM RPD “H” input VIHE ･･･④ Example) When VCC=5V, VOHM=VCC-0.5V, IOHM＝0.4mA, VIHE=VCC×0.7V, from the equation③ RPD≧ Figure 52. Pull down resistance ∴RPU≧ 5-0.5 0.4×10 -3 11.3[kΩ] Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting signal of amplitude of VCC / GND level to input, more stable high speed operations can be realized. On the contrary, when amplitude of 0.8VCC / *1 0.2VCC is input, operation speed becomes slow. In order to realize more stable high speed operation, it is recommended to make the values of RPU, RPD as large as possible, and make the amplitude of signal input to EEPROM close to the amplitude of VCC / GND level. ж ( 1 At this moment, operating timing guaranteed value is guaranteed.) tPD_VIL characteristics 80 70 Spec 50 ] tPD[ns] 60 40 30 Vcc=2.5V 20 Ta=25℃ VIH=Vcc CL=100pF 10 0 0 0.2 0.4 VIL[V] 0.6 0.8 1 Figure 53. VIL dependency of data output delay time tPD ○SO load capacity condition Load capacity of SO output terminal affects upon delay characteristic of SO output. (Data output delay time, time from HOLDB to High-Z) In order to make output delay characteristic into higher speed, make SO load capacity small. In concrete, “Do not connect many devices to SO bus”, “Make the wire between the controller and EEPROM short”, and so forth. ○Other cautions Make the wire length from the microcontroller to EEPROM input signal same length, in order to prevent setup / hold violation to EEPROM, owing to difference of wire length of each input. www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 22/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●I/O equivalence circuit ○Output circuit SO OEint. Figure 54. SO output equivalent circuit ○Input circuit RESETint. CSB Figure 55. CSB input equivalent circuit SCK SI Figure 57. SI input equivalent circuit Figure 56. SCK input equivalent circuit WPB HOLDB Figure 59. WPB input equivalent circuit Figure 58. HOLDB input equivalent circuit www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 23/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Power-Up/Down conditions ○At power ON/OFF, set CSB “H” (=VCC). When CSB is “L”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may cause malfunction, mistake write or so. To prevent these, at power ON, set CSB “H”. (When CSB is in “H” status, all inputs are canceled.) Vcc Vcc GND Vcc CSB GND Good example Bad example Figure 60. CSB timing at power ON/OFF (Good example) CSB terminal is pulled up to VCC. At power OFF, take 10ms or higher before supply. If power is turned on without observing this condition, the IC internal circuit may not be reset, which please note. (Bad example) CSB terminal is “L” at power ON/OFF. In this case, CSB always becomes “L” (active status), and EEPROM may have malfunction, mistake write owing to noises and the likes. Even when CSB input is High-Z, the status becomes like this case, which please note. ○LVCC circuit LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write. At LVCC voltage (Typ. =1.9V) or below, it prevent data rewrite. ○P.O.R. circuit This IC has a POR (Power On Reset) circuit as mistake write countermeasure. After POR action, it gets in write disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if the recommended conditions of the following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to noises and the likes. Recommended conditions of tR, tOFF, Vbot tR Vcc tOFF Vbot tR tOFF Vbot 10ms or below 10ms or higher 0.3V or below 100ms or below 10ms or higher 0.2V or below 0 Figure 61. Rise waveform ●Noise countermeasures ○VCC noise (bypass capacitor) When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a bypass capacitor (0.1µF) between IC VCC and GND. At that moment, attach it as close to IC as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND. ○SCK noise When the rise time (tR) of SCK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SCK input. The hysteresis width of this circuit is set about 0.2V, if noises exist at SCK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SCK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise, fall time as small as possible. ○WPB noise During execution of write status register command, if there exist noises on WPB pin, mistake in recognition may occur and forcible cancellation may result, which please note. To avoid this, a Schmitt trigger circuit is built in WPB input. In the same manner, a Schmitt trigger circuit is built in CSB input, SI input and HOLDB input too. www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 24/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ● Operational Notes (1) Described numeric values and data are design representative values, and the values are not guaranteed. (2) Application circuit Although we can recommend the application circuits contained herein with a relatively high degree of confidence, we ask that you verify all characteristics and specifications of the circuit as well as its performance under actual conditions. Please note that we cannot be held responsible for problems that may arise due to patent infringements or noncompliance with any and all applicable laws and regulations. (3) Absolute maximum ratings Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit between pins. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the absolute maximum ratings. (4) Ground Voltage The voltage of the ground pin must be the lowest voltage of all pins of the IC at all operating conditions. Ensure that no pins are at a voltage below the ground pin at any time, even during transient condition. (5) Thermal consideration Use a thermal design that allows for a sufficient margin by taking into account the permissible power dissipation (Pd) in actual operating conditions. Consider Pc that does not exceed Pd in actual operating conditions (Pc≥Pd). Package Power dissipation : Pd (W)=(Tjmax－Ta)/θja Power dissipation : Pc (W)=(Vcc－Vo)×Io+Vcc×Ib Tjmax : Maximum junction temperature=150℃, Ta : Peripheral temperature[℃] , θja : Thermal resistance of package-ambience[℃/W], Pd : Package Power dissipation [W], Pc : Power dissipation [W], Vcc : Input Voltage, Vo : Output Voltage, Io : Load, Ib : Bias Current (6) Short between pins and mounting errors Be careful when mounting the IC on printed circuit boards. The IC may be damaged if it is mounted in a wrong orientation or if pins are shorted together. Short circuit may be caused by conductive particles caught between the pins. (7) Operation under strong electromagnetic field Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction. www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 25/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Part Numbering B R 2 5 H 1 2 8 x x x - 2 C x x BUS type 25: SPI Operating temperature/ Operating voltage H: -40℃ to +125℃ / 2.5V to 5.5V Capacity 128= 128Kbit Package F: SOP8 FJ: SOP-J8 Process Code Packaging and forming specification E2: Embossed tape and reel www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 26/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Physical Dimension Tape and Reel Information Package Name SOP8 Tape Embossed carrier tape Quantity 2500pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand Direction of feed 1pin Reel www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 ) ∗ Order quantity needs to be multiple of the minimum quantity. 27/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C Package Name SOP-J8 Tape Embossed carrier tape Quantity 2500pcs Direction of feed E2 The direction is the 1pin of product is at the upper left when you hold ( reel on the left hand and you pull out the tape on the right hand Direction of feed 1pin Reel www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 ) ∗ Order quantity needs to be multiple of the minimum quantity. 28/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Marking Diagrams(TOP VIEW) SOP8(TOP VIEW) SOP-J8(TOP VIEW) Part Number Marking H 1 2 8 H 1 2 8 LOT Number 1PIN MARK www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 Part Number Marking LOT Number 1PIN MARK 29/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet BR25H128-2C ●Revision History Date Revision 21. Mar. 2013 001 8. Sep. 2014 002 www.rohm.com ©2014 ROHM Co., Ltd. All rights reserved. TSZ22111・ 15・ 001 Changes New Release P.2 P.2 P.2 P.3 Changed Permissible Dissipation Limits and Unit from 560mW to 0.56W. Added VESD in Absolute Maximum Ratings. Added “Caution” information. Added polarity to Limits (Max.) of Input Leakage Current and Output Leakage Current from 2uA to +2uA. P.8 Modified Figure 12.. P.21 Modified SCK Clock numbers in Figure 50.. P.26 Added Unit to Capacity from 128K to 128Kbit. 30/30 TSZ02201-0R1R0G100130-1-2 8.Sep.2014 Rev.002 Datasheet Notice Precaution on using ROHM Products 1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific Applications. (Note1) Medical Equipment Classification of the Specific Applications JAPAN USA EU CHINA CLASSⅢ CLASSⅡb CLASSⅢ CLASSⅢ CLASSⅣ CLASSⅢ 2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which a failure or malfunction of our Products may cause. The following are examples of safety measures: [a] Installation of protection circuits or other protective devices to improve system safety [b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our Products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents [b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust [c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves [e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items [f] Sealing or coating our Products with resin or other coating materials [g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] Use of the Products in places subject to dew condensation 4. The Products are not subject to radiation-proof design. 5. Please verify and confirm characteristics of the final or mounted products in using the Products. 6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied, confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect product performance and reliability. 7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual ambient temperature. 8. Confirm that operation temperature is within the specified range described in the product specification. 9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in this document. Precaution for Mounting / Circuit board design 1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product performance and reliability. 2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the ROHM representative in advance. For details, please refer to ROHM Mounting specification Notice – SS © 2013 ROHM Co., Ltd. All rights reserved. Rev.002 Datasheet Precautions Regarding Application Examples and External Circuits 1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the characteristics of the Products and external components, including transient characteristics, as well as static characteristics. 2. You agree that application notes, reference designs, and associated data and information contained in this document are presented only as guidance for Products use. Therefore, in case you use such information, you are solely responsible for it and you must exercise your own independent verification and judgment in the use of such information contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. Precaution for Electrostatic This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron, isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control). Precaution for Storage / Transportation 1. Product performance and soldered connections may deteriorate if the Products are stored in the places where: [a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2 [b] the temperature or humidity exceeds those recommended by ROHM [c] the Products are exposed to direct sunshine or condensation [d] the Products are exposed to high Electrostatic 2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is exceeding the recommended storage time period. 3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. Use Products within the specified time after opening a humidity barrier bag. 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ROHM shall not be in any way responsible or liable for infringement of any intellectual property rights or other damages arising from use of such information or data.: 2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any third parties with respect to the information contained in this document. Other Precaution 1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM. 2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of ROHM. 3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the Products or this document for any military purposes, including but not limited to, the development of mass-destruction weapons. 4. The proper names of companies or products described in this document are trademarks or registered trademarks of ROHM, its affiliated companies or third parties. Notice – SS © 2013 ROHM Co., Ltd. All rights reserved. Rev.002 Datasheet General Precaution 1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents. ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny ROHM’s Products against warning, caution or note contained in this document. 2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s representative. 3. 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