BR25H320-WC

Automotive Series Serial EEPROMs 125℃ SPI BUS ICs BR25□□□□Family BR25H□□□-WC series ●Description BR25H□□□-WC series is a serial EEPROM of SPI BUS interface method. No.10001EDT01 ●Features 1) High speed clock action up to 5MHz (Max.) 2) Wait function by HOLDB terminal. 3) Part or whole of memory arrays settable as read only memory area by program. 4) 2.5～5.5V single power source action most suitable for battery use. 5) Page write mode useful for initial value write at factory shipment. 6) Highly reliable connection by Au pad and Au wire. 7) For SPI bus interface (CPOL, CPHA)=(0, 0), (1, 1) 8) Auto erase and auto end function at data rewrite. 9) Low current consumption At write action (5V) : 1.5mA (Typ.) At read action (5V) : 1.0mA (Typ.) At standby action (5V) : 0.1μA (Typ.) 10) Address auto increment function at read action 11) Write mistake prevention function Write prohibition at power on. Write prohibition by command code (WRDI). Write prohibition by WPB pin. Write prohibition block setting by status registers (BP1, BP0) Write mistake prevention function at low voltage. 12) SOP8, SOP-J8, TSSOP-B8 Package 13) Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0 14) Data kept for 40 years. 15) Data rewrite up to 1,000,000times. ●Page write Number of pages Product number 16 Byte BR25H010-WC BR25H020-WC BR25H040-WC 32 Byte BR25H080-WC BR25H160-WC BR25H320-WC ●BR25H series Capacity 1Kbit 2Kbit 4Kbit 8Kbit 16Kbit 32Kbit Bit format 128×8 256×8 512×8 1K×8 2K×8 4Kx8 Type BR25H010-WC BR25H020-WC BR25H040-WC BR25H080-WC BR25H160-WC BR25H320-WC Power source voltage 2.5~5.5V 2.5~5.5V 2.5~5.5V 2.5~5.5V 2.5~5.5V 2.5~5.5V SOP8 ● ● ● ● ● ● SOP-J8 ● ● ● ● ● ● TSSOP-B8 ● ● www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 1/19 2010.08 - Rev.D BR25H□□□-WC series ●Absolute maximum ratings (Ta=25°C) Parameter Impressed voltage Permissible dissipation Storage temperature range Operating temperature range Terminal voltage Technical Note Symbol VCC Pd Tstg Topr - Limits -0.3~+6.5 560(SOP8) *1 Unit V mW *3 560(SOP-J8) *2 410(TSSOP-B8) -65~+150 -40~+125 -0.3~VCC+0.3 °C °C V ・When using at Ta=25℃ or higher, 4.5mW (*1,*2), 3.3mW(*3) to be reduced per 1℃ ●Memory cell characteristics (VCC=2.5V～5.5V) Parameter Limits Min. 1,000,000 *1 Typ. - Max. - Unit Times Times Times Years Years Condition Ta≤85°C Ta≤105°C Ta≤125°C Ta≤25°C Ta≤85°C Number of data rewrite times 500,000 300,000 40 20 Data hold years*1 *1:Not 100% TESTED ●Recommended action conditions Parameter Power source voltage Input voltage Symbol VCC Vin Limits 2.5~5.5 0~VCC Unit V ●Input / output capacity (Ta=25°C, frequency=5MHz) Parameter Input capacity*1 Output capacity*1 *1: Not 100% TESTED Symbol CIN COUT Conditions VIN=GND VOUT=GND Min - Max 8 Unit pF 8 www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 2/19 2010.08 - Rev.D BR25H□□□-WC series ●Electrical characteristics (Unless otherwise specified, Ta=-40~+125°C, VCC=2.5~5.5V) Limits Parameter Symbol Unit Conditions Min. Typ. Max. “H” input voltage “L” input voltage “L” output voltage “H” output voltage Input leak current Output leak current VIH VIL VOL VOH ILI ILO ICC1 Current consumption at write action ICC2 3.0 0.7xVCC -0.3 0 VCC-0.5 -10 -10 VCC +0.3 0.3x VCC 0.4 VCC 10 10 2.0 V 2.5≦VCC≦5.5V V 2.5≦VCC≦5.5V V IOL=2.1mA V IOH=-0.4mA μA VIN=0~VCC μA VOUT=0~VCC, CSB=VCC VCC=2.5V,fSCK=5MHz, tE/W=5ms Technical Note mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN Byte write, Page write Write status register VCC=5.5V,fSCK=5MHz, tE/W=5ms mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN Byte write, Page write Write status register VCC=2.5V,fSCK=5MHz mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN Read, Read status register VCC=5.5V,fSCK=5MHz mA VIH/VIL=0.9VCC/0.1VCC, SO=OPEN Read, Read status register ICC3 Current consumption at read action ICC4 Standby current ISB - - 1.5 - - 2.0 10 μA VCC=5.5V CSB=HOLDB=WPB=VCC, SCK=SI=VCC or =GND, SO=OPEN *Radiation resistance design is not made ●Block diagram CSB SCK VOLTAGE INSTRUCTION DECODE CONTROL CLOCK GENERATION W RITE INHIBITION HIGH VOLTAGE GENERATOR DETECTION SI HOLDB INSTRUCTION REGISTER ADDRESS REGISTER 7～12bit *1 STATUS REGISTER ADDRESS DECODER READ/WRITE AMP 7～12bit *1 1～32K EEPROM *1 7bit: BR25H010-WC 8bit: BR25H020-WC 9bit: BR25H040-WC 10bit: BR25H080-WC 11bit: BR25H160-WC 12bit: BR25H320-WC WPB SO DATA REGISTER 8bit 8bit Fig.1 Block diagram ●Pin assignment and description Terminal name Vcc HOLDB SCK SI Input/Output Input Input Input Output Input Function Power source to be connected All input / output reference voltage, 0V Chip select input Serial clock input Start bit, ope code, address, and serial data input Serial data output Hold input Command communications may be suspended temporarily (HOLD status) Write protect input Write command is prohibited *1 Write status register command is prohibited. VCC GND CSB SCK SI SO HOLDB BR25H010-WC BR25H020-WC BR25H040-WC BR25H080-WC BR25H160-WC BR25H320-WC CSB SO WPB GND Fig.2 Pin assignment diagram WPB *1:BR25H010/020/040-WC Input www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 3/19 2010.08 - Rev.D BR25H□□□-WC series ●Operating timing characteristics (Ta=-40~+125°C, unless otherwise specified, load capacity CL1=100pF) 2.5≤VCC≤5.5V Parameter Symbol Unit Min. Typ. Max. SCK frequency SCK high time SCK low time CSB high time CSB setup time CSB hold time SCK setup time SCK hold time SI setup time SI hold time Data output delay time1 Data output delay time2 (CL2=30pF) Technical Note ●Sync data input / output timing tCS tCSS CSB tSCKS tSCKWL tSCKWH tRC tFC SCK tDIS tDIH fSCK tSCKWH tSCKWL tCS tCSS tCSH tSCKS tSCKH tDIS tDIH tPD1 tPD2 tOH tOZ tHFS tHFH tHRS tHRH tHOZ tHPD tRC tFC *1 85 85 85 90 85 90 90 20 30 0 0 40 0 70 - - 5 70 55 100 100 70 1 1 50 50 5 MHz ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns SI SO High-Z Fig.3 Input timing SI is taken into IC inside in sync with data rise edge of SCK. Input address and data from the most significant bit MSB. tCS tCSH tSCKH CSB SCK SI SO tPD tOH tRO,tFO tOZ High-Z Output hold time Output disable time HOLDB setting setup time HOLDB setting hold time HOLDB release setup time HOLDB release hold time Time from HOLDB to output High-Z Time from HOLDB To output change SCK rise time*1 SCK fall time*1 OUTPUT rise time Write time *1 NOT 100% TESTED Fig.4 Input / Output timing SO is output in sync with data fall edge of SCK. Data is output from the most significant bit MSB. CSB "H" "L" tHFS tHFH tHRS tHRH SCK tDIS SI n+1 tHOZ High-Z tHPD n n-1 SO Dn+1 Dn Dn Dn-1 ns μs μs ns ns ms HOLDB Fig.5 HOLD timing tRO tFO tE/W OUTPUT fall time*1 ●AC measurement conditions Parameter Load capacity 1 Load capacity 2 Input rise time Input fall time Input voltage Input / Output judgment voltage Symbol CL1 CL2 Limits Min. Typ. 0.2VCC/0.8VCC 0.3VCC/0.7VCC Max. 100 30 50 50 Unit pF pF ns ns V V www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 4/19 2010.08 - Rev.D BR25H□□□-WC series ●Characteristic data (The following characteristic data are Typ. Value.) 6 5 4 VIH[V] 3 2 1 0 0 1 2 3 Vcc[V] 4 5 6 6 Technical Note 1 Ta=-40℃ Ta=25℃ Ta=125℃ VIL[V] 5 4 Ta=-40℃ Ta=25℃ Ta=125℃ VOL[V] 0.8 0.6 Ta=-40℃ Ta=25℃ Ta=125℃ SPEC 3 2 1 0 0 1 2 3 Vcc[V] 4 5 6 SPEC 0.4 0.2 SPEC 0 0 1 2 3 IOL[mA] 4 5 6 Fig.6 2.6 2.5 2.4 2.3 VOH[V] 2.2 2.1 2 1.9 1.8 0 "H" input voltage VIH(CSB,SCK,SI,HOLDB,WPB) 12 Fig.7 　"L" input voltage　VIL(CSB,SCK,SI,HOLDB,WPB) 12 Fig.8　"L" output voltage　VOL-IOL(Vcc=2.5V) SPEC 10 8 ILI[μA] 6 4 2 0 10 SPEC Ta=-40℃ Ta=25℃ Ta=125℃ ILO[μA] 2 3 Vcc[V] 4 5 6 Ta=-40℃ Ta=25℃ Ta=125℃ 8 6 4 2 0 SPEC Ta=-40℃ Ta=25℃ Ta=125℃ 0.4 IOH[mA] 0.8 1.2 0 1 0 1 2 3 VOUT[V] 4 5 6 Fig.9　"H" output voltage VOH-IOH(Vcc=2.5V) 4 Fig.10　Input leak current ILI(CSB,SCK,SI,HOLDB,WPB) 2.5 12 Fig.11　Output leak current ILO(SO)(Vcc=5.5V) ICC3,4(READ)[mA] 3 ICC1,2[mA]] fSCK=5MHz DATA=00h SPEC SPEC 2 1.5 1 0.5 fSCK=5MHz DATA=AAh SPEC SPEC 10 8 ISB[μA] 6 4 2 0 SPEC Ta=-40℃ Ta=25℃ Ta=125℃ 2 1 Ta=-40℃ Ta=25℃ Ta=125℃ Ta=-40℃ Ta=25℃ Ta=125℃ 0 0 1 2 3 Vcc[V] 4 5 6 0 0 1 2 3 Vcc[V] 4 5 6 0 1 2 3 Vcc[V] 4 5 6 Fig.12　Current consumption at WRITE operation ICC1,2 100 Fig.13　Consumption Current at READ operation ICC3,4 100 80 tSCKWH [ns] 100 Fig.14　Consumption current at standby operation ISB SPEC tSCKWL [ns] 80 SPEC Ta=-40℃ Ta=25℃ Ta=125℃ 10 fSCK[MHz] 60 40 20 0 SPEC 1 Ta=-40℃ Ta=25℃ Ta=125℃ 60 Ta=-40℃ Ta=25℃ Ta=125℃ 40 20 0.1 0 1 2 3 Vcc[V] 4 5 6 0 0 1 2 3 Vcc[V] 4 5 6 0 1 2 3 Vcc[V] 4 5 6 Fig.15　SCK frequency fSCK 100 100 Fig.16 SCK high time　tSCKWH 100 Fig.17 SCK low time　tSCKWL 80 SPEC tCSS[ns] 80 SPEC tCSH[ns] 80 tCS[ns] 60 Ta=-40℃ Ta=25℃ Ta=125℃ 60 Ta=-40℃ Ta=25℃ Ta=125℃ SPEC Ta=-40℃ Ta=25℃ Ta=125℃ 60 40 40 40 20 20 20 0 0 1 2 3 Vcc[V] 4 5 6 0 0 1 2 3 Vcc[V] 4 5 6 0 0 1 2 3 Vcc[V] 4 5 6 Fig.18 CSB high time　tCS Fig.19　CSB setup time　tCSS Fig.20　CSB hold time　tCSH www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 5/19 2010.08 - Rev.D BR25H□□□-WC series ●Characteristic data (The following characteristic data are Typ. Value.) Technical Note 30 50 100 20 Ta=-40℃ Ta=25℃ Ta=125℃ 40 Ta=-40℃ Ta=25℃ Ta=125℃ tPD1 [ns] 80 SPEC SPEC tDIH[ns] 30 tDIS[ns] 10 SPEC 60 0 20 40 -10 10 20 Ta=-40℃ Ta=25℃ Ta=125℃ -20 0 1 2 3 Vcc[V] 4 5 6 0 0 1 2 3 Vcc[V] 4 5 6 0 0 1 2 Fig.21　SI setup time　tDIS 100 120 Fig.22　SI hold time　tDIH 3 Vcc[V] 4 5 6 Fig.23　Data output delay time　tPD1(CL=100pF) 80 80 Ta=-40℃ Ta=25℃ Ta=125℃ 100 SPEC 60 SPEC tOZ [ns] 80 60 40 Ta=-40℃ Ta=25℃ Ta=125℃ tHFH [ns] tPD2 [ns] 60 Ta=-40℃ Ta=25℃ Ta=125℃ 40 SPEC 20 40 20 20 0 0 1 2 3 Vcc[V] 4 5 6 0 1 2 3 Vcc[V] 4 5 6 0 0 -20 0 1 2 3 Vcc[V] 4 5 6 Fig.24　Data output delay time tPD2(CL-30pF) 80 120 100 Fig.25　Output disable time tOZ 80 Fig.26　HOLDB setting hold time tHFH 60 tHOZ [ns] 60 40 tHPD [ns] tHRH [ns] 40 Ta=-40℃ Ta=25℃ Ta=125℃ 60 SPEC SPEC 80 SPEC 40 20 20 0 20 0 0 1 2 3 Vcc[V] 4 5 6 0 Ta=-40℃ Ta=25℃ Ta=125℃ 0 Ta=-40℃ Ta=25℃ Ta=125℃ -20 -20 1 2 3 Vcc[V] 4 5 6 0 1 2 3 Vcc[V] 4 5 6 Fig.27　HOLDB release hold time tHRH 100 Fig.28　Time from HOLDB to output High-Z tHOZ 100 Fig.29　Time from HOLDB to output change tHPD 8 80 Ta=-40℃ Ta=25℃ Ta=125℃ tFO [ns] 80 Ta=-40℃ Ta=25℃ Ta=125℃ tE/W[ms] 6 Ta=-40℃ Ta=25℃ Ta=125℃ SPEC tRO [ns] 60 60 4 40 SPEC 40 SPEC 20 20 2 0 0 1 2 3 Vcc[V] 4 5 6 0 0 1 2 3 Vcc[V] 4 5 6 0 0 1 2 3 Vcc[V] 4 5 6 Fig.30 Output rise time tRO Fig.31 Output fall time tFO Fig.32 Write cycle time tE/W www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 6/19 2010.08 - Rev.D BR25H□□□-WC series Technical Note ●Features ○Status registers This IC has status registers. The status registers are of 8 bits and express the following parameters. BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore are valid even when power source is turned off. Rewrite characteristics and data hold time are same as characteristics of the EEPROM. WEN can be set by write enable command and write disable command. WEN becomes write disable status when power source is turned off. R/B is for write confirmation, therefore cannot be set externally. The value of status register can be read by read status command. ●Status registers Product number BR25H010-WC BR25H020-WC BR25H040-WC BR25H080-WC BR25H160-WC BR25H320-WC bit Memory location Function WPB pin enable / disable designation bit WPEN EEPROM BP1 BP0 WPEN=0=invalid WPEN=1=valid bit 7 1 bit 6 1 bit 5 1 bit 4 1 bit 3 BP1 bit 2 BP0 bit 1 WEN bit 0 R/B ― WPEN 0 0 0 BP1 BP0 WEN R/B ― Contents This enables / disables the functions of WPB pin. This designates the write disable area of EEPROM. Write designation areas of product numbers are shown below. EEPROM EEPROM write disable block designation bit Write and write status register write enable / disable status confirmation bit WEN=0=prohibited WEN=1=permitted WEN Register R/B ― Write cycle status (READY / BUSY) status confirmation bit Register R/B=0=READY R/B=1=BUSY ●Write disable block setting BP1 0 0 1 1 BP0 0 1 0 1 BR25H010-WC None 60h-7Fh 40h-7Fh 00h-7Fh BR25H020-WC None C0h-FFh 80h-FFh 00h-FFh Write disable block BR25H040-WC BR25H080-WC None None 180h-1FFh 300h-3FFh 100h-1FFh 200h-3FFh 000h-1FFh 000h-3FFh BR25H160-WC BR25H320-WC None None 600h-7FFh C00h-FFFh 400h-7FFh 800h-FFFh 000h-7FFh 000h-FFFh ○WPB pin By setting WPB=LOW, write command is prohibited. As for BR25H080/160/320-WC, only when WPEN bit is set “1”, the WPB pin functions become valid. And the write command to be disabled at this moment is WRSR. As for BR25H010/ 020/040-WC, both WRITE and WRSR commands are prohibited. However, when write cycle is in execution, no interruption can be made. Product number BR25H010-WC BR25H020-WC BR25H040-WC BR25H080-WC BR25H160-WC BR25H320-WC WRSR Prohibition possible Prohibition possible but WPEN bit “1” WRITE Prohibition possible Prohibition impossible ○HOLDB pin By HOLDB pin, data transfer can be interrupted. When SCK=”0”, by making HOLDB from “1” into”0”, data transfer to EEPROM is interrupted. When SCK = “0”, by making HOLDB from “0” into “1”, data transfer is restarted. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 7/19 2010.08 - Rev.D BR25H□□□-WC series ●Command mode Ope code Command Contents BR25H010-WC BR25H020-WC 0000 0000 0000 0000 0000 0000 *110 *100 *011 *010 *101 *001 Technical Note BR25H040-WC 0000 0000 0000 0000 0000 0000 *110 *100 A8011 A8010 *101 *001 BR25H080-WC BR25H160-WC BR25H320-WC 0000 0000 0000 0000 0000 0000 0110 0100 0011 0010 0101 0001 WREN WRDI READ WRITE RDSR WRSR Write enable Write disable Read Write Read status register Write status register Write enable command Write disable command Read command Write command Status register read command Status register write command *=Don’t Care Bit. ●Timing chart 1. Write enable (WREN) / disable (WRDI) cycle WREN (WRITE ENABLE): Write enable CSB SCK 0 1 2 3 4 5 6 7 SI 0 0 0 0 *1 1 1 0 SO High-Z Fig.33 Write enable command *1 BR25H010/020/040-WC= Don’t care BR25H080/160/320-WC= “0” input WRDI (WRITE DISABLE): Write disable CSB SCK 0 1 2 3 4 5 6 7 SI 0 0 0 0 *1 1 0 0 SO High-Z Fig.34 Write disable *1 BR25H010/020/040-WC= Don’t care BR25H080/160/320-WC= “0” input ○This IC has write enable status and write disable status. It is set to write enable status by write enable command, and it is set to write disable status by write disable command. As for these commands, set CSB LOW, and then input the respective ope codes. The respective commands accept command at the 7-th clock rise. Even with input over 7 clocks, command becomes valid. When to carry out write and write status register command, it is necessary to set write enable status by the write enable command. If write or write status register command is input in the write disable status, commands are cancelled. And even in the write enable status, once write and write status register command is executed, it gets in the write disable status. After power on, this IC is in write disable status. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 8/19 2010.08 - Rev.D BR25H□□□-WC series 2. Read command (READ) CSB ～～ ～～ ～～ Technical Note SCK 0 1 2 3 4 5 6 7 8 9 10 11 15 16 ～～ 22 ～～ SI 0 0 0 0 ＊1 0 1 1 A7 A6 A5 A4 ～～ ～～ A1 A0 ～～ ～～ SO High-Z Product number BR25H010-WC BR25H020-WC BR25H040-WC D0 Address length A6-A0 A7-A0 A8-A0 D7 D6 D2 D1 Fig.35 Read command (BR25H010/020/040-WC) *1 BR25H010/020-WC=Don’t care BR25H040-WC=A8 CSB ～～ ～～ ～～ ～～ 12 23 24 ～～ Productnumber 30 SCK 0 1 2 3 4 5 6 7 8 ～～ ～～ ～～ ＊ SI 0 0 0 0 0 0 1 1 ＊ ＊～ ～ A11 ～～ ～～ A1 A0 ～～ ～～ BR25H080-WC BR25H160-WC BR25H320-WC D0 Address length A9-A0 A10-A0 A11-A0 SO High-Z ～～ D7 D6 D2 D1 Fig.36 Read command (BR25H080/160/320-WC) *=Don’t Care *1 BR25H010/020/040-WC=15 clocks BR25H080/160/320-WC=23 clocks By read command, data of EEPROM can be read. As for this command, set CSB LOW, then input address after read ope *1 code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 15/23 clock, and from D7 to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by continuing input of SCK, data of the next address can be read. Increment read can read all the addresses of EEPROM. After reading data of the most significant address, by continuing increment read, data of the most insignificant address is read. 3. Write command (WRITE) CSB SCK SI SO 0 1 2 3 4 5 6 7 8 ～～ ～～ ～～ ～～ ～～ 15 16 22 23 ～～ A1 A0 D7 D6 0 0 0 0 ＊1 0 1 0 A7 A6 A5 A4 ～～ ～～ ～～ ～～ D2 D1 D0 High-Z Product number BR25H010-WC BR25H020-WC BR25H040-WC Address length A6-A0 A7-A0 A8-A0 Fig.37 Write command (BR25H010/020/040-WC) *1 BR25H010/020-WC=Don’t care BR25H040-WC=A8 CSB SCK SI SO 0 1 2 3 4 5 6 7 8 ～～ ～～ ～～ ～～ ～～ 12 ～ ～ 23 24 30 31 ～～ 0 0 0 0 0 0 1 0 ＊ ＊ ～～ A1 A0 D7 D6 ～＊ ～ ～～ A11 ～ ～ ～～ ～～ D2 D1 D0 Product number BR25H080-WC BR25H160-WC BR25H320-WC ＊=Don't Care Address length A9-A0 A10-A0 A11-A0 High-Z Fig.38 Write command (BR25H080/160/320-WC) By write command, data of EEPROM can be written. As for this command, set CSB LOW, then input address and data after write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of EEPROM requires time of tE/W (Max 5ms). During tE/W, other than status read command is not accepted. Start CSB after taking the last data (D0), and before the next SCK clock starts. At other timing, write command is not executed, and this write command is cancelled. This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input without *1 *2 starting CSB, data up to 16/32 bytes can be written for one tE/W. In page write, the insignificant 4/5 bit of the designated address is incremented internally at every time when data of 1 byte is input and data is written to respective addresses. When data of the maximum bytes or higher is input, address rolls over, and previously input data is overwritten. *1 BR25H010/020/040-WC=16 bytes at maximum BR25H080/160/320-WC=32 bytes at maximum * 2 BR25H010/020/040-WC=Insignificant 4 bits BR25H080/160/320-WC=Insignificant 5 bits www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 9/19 2010.08 - Rev.D BR25H□□□-WC series 4. Status register write / read command CSB SCK SI SO 0 1 2 3 4 5 6 7 bit7 Technical Note 8 9 bit6 10 bit5 11 bit4 12 bit3 13 bit2 14 bit1 15 bit0 0 0 0 0 ＊ 0 0 1 ＊ ＊ ＊ ＊ BP1 BP0 ＊ ＊ High-Z ＊=Don't care Fig.39 Status register write command (BR25H010/020/040-WC) CSB SCK SI SO 0 1 2 3 4 5 6 7 bit7 8 9 bit6 10 bit5 11 bit4 12 bit3 13 bit2 14 bit1 15 bit0 0 0 0 0 0 0 0 1 WPEN ＊ ＊ ＊ BP1 BP0 ＊ ＊ High-Z ＊=Don't care Fig.40 Status register write command (BR25H080/160/320-WC) *1 Write status register command can write status register data. The data can be written by this command are 2 bits , that is, BP1 (bit3) and BP0 (bit2) among 8 bits of status register. By BP1 and BP0, write disable block of EEPROM can be set. As for this command, set CSB LOW, and input ope code of write status register, and input data. Then, by making CSB HIGH, EEPROM starts writing. Write time requires time of tE/W as same as write. As for CSB rise, start CSB after taking the last data bit (bit0), and before the next SCK clock starts. At other timing, command is cancelled. Write disable block is determined by BP1 and BP0, and the block can be selected from 1/4 of memory array, 1/2, and entire memory array. (Refer to the write disable block setting table.) To the write disabled block, write cannot be made, and only read can be made. *1 3bits including BR25H080/160/320-WC WPEN (bit7) CSB SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SI 0 0 0 0 ＊ 1 0 1 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0 SO High-Z 1 1 1 1 BP1 BP0 WEN R/B ＊=Don’t care Fig.41 Status register read command (BR25H010/020/040-WC) CSB SCK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 SI 0 0 0 0 0 1 0 1 bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0 SO High-Z WPEN 0 0 0 BP1 BP0 WEN R/B Fig.42 Status register read command (BR25H080/160/320-WC) www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 10/19 2010.08 - Rev.D BR25H□□□-WC series Technical Note ●At standby ○Current at standby Set CSB “H”, and be sure to set SCK, SI, WPB, HOLDB input “L” or “H”. Do not input intermediate electric potantial. ○Timing As shown in Fig.43, at standby, when SCK is “H”, even if CSB is fallen, SI status is not read at fall edge. SI status is read at SCK rise edge after fall of CSB. At standby and at power ON/OFF, set CSB “H” status. Even if CSB is fallen at SCK=SI=”H”, SI status is not read at that edge. CSB Command start here. SI is read. SCK 0 1 2 SI Fig.43 Operating timing ●WPB cancel valid area WPB is normally fixed to “H” or “L” for use, but when WPB is controlled so as to cancel write status register command and write command, pay attention to the following WPB valid timing. While write or write status register command is executed, by setting WPB = “L” in cancel valid area, command can be cancelled. The area from command ope code before CSB rise at internal automatic write start becomes the cancel valid area. However, once write is started, any input cannot be cancelled. WPB input becomes Don’t Care, and cancellation becomes invalid. SCK 6 7 15 16 Ope Code Data tE/W Data write time Invalid Invalid (BR25H010/020/040-WC) (BR25H080/160/320-WC) Valid (WEN is reset by WPB=L) Invalid Valid Fig.44 WPB valid timing (WRSR) *1 SCK 6 7 8 15/23 24/32 *2 Ope Code Address Valid (WEN is reset by WPB=L) Data tE/W Data write time Invalid (BR25H010/020/040-WC) (BR25H080/160/320-WC) Invalid Invalid Invalid Invalid *1 *2 BR25H010/020/040-WC = 15 BR25H080/160/320-WC = 23 BR25H010/020/040-WC = 24 BR25H080/160/320-WC = 32 Fig.45 WPB valid timing (WRITE) ●HOLDB pin By HOLDB pin, command communication can be stopped temporarily (HOLD status). The HOLDB pin carries out command communications normally when it is HIGH. To get in HOLD status, at command communication, when SCK=LOW, set the HOLDB pin LOW. At HOLD status, SCK and SI become Don’t Care, and SO becomes high impedance (High-Z). To release the HOLD status, set the HOLDB pin HIGH when SCK=LOW. After that, communication can be restarted from the point before the HOLD status. For example, when HOLD status is made after A5 address input at read, after release of HOLD status, by starting A4 address input, read can be restarted. When in HOLD status, leave CSB LOW. When it is set CSB=HIGH in HOLD status, the IC is reset, therefore communication after that cannot be restarted. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 11/19 2010.08 - Rev.D BR25H□□□-WC series ●Method to cancel each command ○READ ・Method to cancel : cancel by CSB = “H” Technical Note Ope code 8 bits Address 8 bits/16bits Data 8 bits Cancel available in all areas of read mode Fig.46 READ cancel valid timing ○RDSR ・Method to cancel : cancel by CSB = “H” Ope code 8 bits Data 8 bits Cancel available in all areas of rdsr mode Fig.47 RDSR cancel valid timing ○WRITE、PAGE WRITE a：Ope code, address input area. Cancellation is available by CSB=”H” b：Data input area (D7~D1 input area) Cancellation is available by CSB=”H” c：Data input area (D0 area) When CSB is started, write starts. After CSB rise, cancellation cannot be made by any means. d：tE/W area. Cancellation is available by CSB = “H”. However, when write starts (CSB is started) in the area c, cancellation cannot be made by any means. And by inputting on SCK clock, cancellation cannot be made. In page write mode, there is write enable area at every 8 clocks. Ope code 8bits a Address Data tE/W 8bits/16bits 8bits b c d SCK D7 D6 D5 D4 b D3 D2 D1 D0 c SI Fig.48 WRITE cancel valid timing Note 1) If VCC is made OFF during write execution, designated address data is not guaranteed, therefore write it once again. Note 2) If CSB is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it is recommended to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher. ○WRSR a：From ope code to 15 rise. Cancel by CSB =”H”. b：From 15 clock rise to 16 clock rise (write enable area). When CSB is started, write starts. After CSB rise, cancellation cannot be made by any means. c：After 16 clock rise. Cancel by CSB=”H”. However, when write starts (CSB is started) in the area b, cancellation cannot be made by any means. And, by inputting on SCK clock, cancellation cannot be made. SCK 14 15 16 17 SI D1 a D0 b c tE/W Ope code 8 bits a Data 8 bits c b Fig.49 WRSR cancel valid timing Note 1) If VCC is made OFF during write execution, designated address data is not guaranteed, therefore write it once again Note 2) If CSB is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it is recommended to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher. ○WREN/WRDI a：From ope code to 7-th clock rise, cancel by CSB = “H”. b：Cancellation is not available when CSB is started after 7-th clock. SCK 7 8 9 Ope code 8 bits a b Fig.50 WREN/WRDI cancel valid timing www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 12/19 2010.08 - Rev.D BR25H□□□-WC series Technical Note ●High speed operation In order to realize stable high speed operations, pay attention to the following input / output pin conditions. ○Input pin pull up, pull down resistance When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller VOL, IOL from VIL characteristics of this IC. ○Pull up resistance VCC-VOLM IOLM VILE RPU≥ Microcontroller VOLM “L” output IOLM RPU EEPROM VILE “L” input ･･･① ･･･② VOLM≤ Example) When Vcc=5V, VILE=1.5V, VOLM=0.4V, IOLM=2mA, from the equation ①, 5-0.4 2×10 -3 Fig.51 Pull up resistance RPU≥ ∴RPU≥ 2.3[kΩ] With the value of Rpu to satisfy the above equation, VOLM becomes 0.4V or lower, and with VILE (=1.5V), the equation ② is also satisfied. ・VILE :EEPROM VIL specifications ・VOLM :Microcontroller VOL specifications ・IOLM :Microcontroller IOL specifications And, in order to prevent malfunction, mistake write at power ON/OFF, be sure to make CSB pull up. ○Pull down resistance VOHM IOHM VIHE Microcontroller VOHM “H” output RPD EEPROM VIHE “H” input RPD≥ VOHM≥ ･･･③ ･･･④ IOHM Fig.52 Pull down resistance Example) When VCC=5V, VOHM=VCC-0.5V, IOHM＝0.4mA, VIHE=VCC×0.7V, from the equation③, RPD≥ 5-0.5 0.4×10 ∴RPU≥ -3 11.3[kΩ] Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting signal of amplitude of VCC / GND level to input, more stable high speed operations can be realized. On the contrary, when amplitude of *1 0.8VCC / 0.2VCC is input, operation speed becomes slow. In order to realize more stable high speed operation, it is recommended to make the values of RPU, RPD as large as possible, and make the amplitude of signal input to EEPROM close to the amplitude of VCC / GND level. ж ( 1 At this moment, operating timing guaranteed value is guaranteed.) www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 13/19 2010.08 - Rev.D BR25H□□□-WC series Technical Note tPD_VIL characteristics 80 Spec 70 60 50 tPD[ns] 40 30 20 10 0 0 0.2 0.4 VIL[V] 0.6 0.8 1 Vcc=2.5V Ta=25℃ VIH=Vcc CL =100pF Fig.53 VIL dependency of data output delay time tPD ○SO load capacity condition Load capacity of SO output pin affects upon delay characteristic of SO output. (Data output delay time, time from HOLDB to High-Z) In order to make output delay characteristic into higher speed, make SO load capacity small. In concrete, “Do not connect many devices to SO bus”, “Make the wire between the controller and EEPROM short”, and so forth. tPD-CL characteristics 80 Vcc=2.5V 　 Ta=25℃ 70 60 tPD[ns] 50 VIH/VIL=0.8Vcc/0.2Vcc Spec EEPROM SO Spec CL 40 30 20 0 20 40 60 CL[pF] 80 100 120 Fig.54 SO load dependency of data output delay time tPD ○Other cautions Make the wire length from the microcontroller to EEPROM input signal same length, in order to prevent setup / hold violation to EEPROM, owing to difference of wire length of each input. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 14/19 2010.08 - Rev.D BR25H□□□-WC series ●Equivalent circuit ○Output circuit Technical Note SO OEint. Fig.55 SO output equivalent circuit ○Input circuit RESETint. CSB Fig.56 CSB input equivalent circuit SCK SI Fig.57 SCK input equivalent circuit Fig.58 SI input equivalent circuit HOLDB WPB Fig.59 HOLDB input equivalent circuit Fig.60 WPB input equivalent circuit www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 15/19 2010.08 - Rev.D BR25H□□□-WC series Technical Note ●Notes on power ON/OFF ○At power ON/OFF, set CSB “H” (=VCC). When CSB is “L”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes may cause malfunction, mistake write or so. To prevent these, at power ON, set CSB “H”. (When CSB is in “H” status, all inputs are canceled.) Vcc Vcc GND Vcc CSB GND Good example Bad example Fig.61 CSB timing at power ON/OFF (Good example) CSB terminal is pulled up to VCC. At power OFF, take 10ms or higher before supply. If power is turned on without observing this condition, the IC internal circuit may not be reset, which please note. (Bad example) CSB terminal is “L” at power ON/OFF. In this case, CSB always becomes “L” (active status), and EEPROM may have malfunction, mistake write owing to noises and the likes. Even when CSB input is High-Z, the status becomes like this case, which please note. ○LVCC circuit LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write. At LVCC voltage (Typ. =1.9V) or below, it prevent data rewrite. ○P.O.R. circuit This IC has a POR (Power On Reset) circuit as mistake write countermeasure. After POR action, it gets in write disable status. The POR circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if the recommended conditions of the following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to noises and the likes. Recommended conditions of tR, tOFF, Vbot tR tR tOFF 0 Vbot 10ms or below 100ms or below tOFF 10ms or higher 10ms or higher Vbot 0.3V or below 0.2V or below Vcc Fig.62 Rise waveform www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 16/19 2010.08 - Rev.D BR25H□□□-WC series Technical Note ●Noise countermeasures ○VCC noise (bypass capacitor) When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is recommended to attach a bypass capacitor (0.1μF) between IC VCC and GND. At that moment, attach it as close to IC as possible.And, it is also recommended to attach a bypass capacitor between board VCC and GND. ○SCK noise When the rise time (tR) of SCK is long, and a certain degree or more of noise exists, malfunction may occur owing to clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SCK input. The hysterisis width of this circuit is set about 0.2V, if noises exist at SCK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the rise time (tR) of SCK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise countermeasures. Make the clock rise, fall time as small as possible. ○WPB noise During execution of write status register command, if there exist noises on WPB pin, mistake in recognition may occur and forcible cancellation may result, which please note. To avoid this, a Schmitt trigger circuit is built in WPB input. In the same manner, a Schmitt trigger circuit is built in CSB input, SI input and HOLDB input too. ●Note of use (1) Described numeric values and data are design representative values, and the values are not guaranteed. (2) We believe that application circuit examples are recommendable, however, in actual use, confirm characteristics further sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in consideration of static characteristics and transition characteristics and fluctuations of external parts and our LSI. (3) Absolute maximum ratings If the absolute maximum ratings such as impressed voltage and operating temperature range and so forth are exceeded, LSI may be destructed. Do not impress voltage and temperature exceeding the absolute maximum ratings. In the case of fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that conditions exceeding the absolute maximum ratings should not be impressed to LSI. (4) GND electric potential Set the voltage of GND terminal lowest at any action condition. Make sure that each terminal voltage is higher than that of GND terminal. (5) Heat design In consideration of permissible dissipation in actual use condition, carry out heat design with sufficient margin. (6) Terminal to terminal short circuit and wrong packaging When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may destruct LSI. And in the case of short circuit between LSI terminals and terminals and power source, terminal and GND owing to foreign matter, LSI may be destructed. (7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 17/19 2010.08 - Rev.D BR25H□□□-WC series ●Ordering part number Technical Note B R 2 5 H Operating 0 Capacity 1 0 F Package type F : SOP8 FJ : SOP-J8 - W C E 2 Rohm type BUS type 25：SPI Double cell Packaging and forming specification E2: Embossed tape and reel temperature 010= 1K H:-40℃～+125℃ 020= 2K 040= 4K 080= 8K 160=16K 320=32K FVT :TSSOP-B8 SOP-J8 4.9±0.2 (MAX 5.25 include BURR) + 4° −6° 4° 8 7 6 5 Tape Quantity 0.45MIN Embossed carrier tape 2500pcs E2 The direction is the 1pin of product is at the upper left when you hold 6.0±0.3 3.9±0.2 Direction of feed ( reel on the left hand and you pull out the tape on the right hand ) 1 2 3 4 0.545 S 0.2±0.1 1.375±0.1 0.175 1.27 0.42±0.1 0.1 S 1pin (Unit : mm) Reel Direction of feed ∗ Order quantity needs to be multiple of the minimum quantity. SOP8 5.0±0.2 (MAX 5.35 include BURR) 8 7 6 5 +6° 4° −4° Tape Quantity 0.9±0.15 0.3MIN Embossed carrier tape 2500pcs E2 The direction is the 1pin of product is at the upper left when you hold 6.2±0.3 4.4±0.2 Direction of feed ( reel on the left hand and you pull out the tape on the right hand ) 12 3 4 0.595 1.5±0.1 +0.1 0.17 -0.05 S 0.11 1.27 0.42±0.1 1pin (Unit : mm) Direction of feed Reel ∗ Order quantity needs to be multiple of the minimum quantity. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 18/19 2010.08 - Rev.D BR25H□□□-WC series Technical Note TSSOP-B8 3.0 ± 0.1 (MAX 3.35 include BURR) 8 7 6 5 4±4 Tape Quantity Embossed carrier tape 3000pcs E2 The direction is the 1pin of product is at the upper left when you hold 6.4 ± 0.2 4.4 ± 0.1 Direction of feed 0.5 ± 0.15 1.0 ± 0.2 ( reel on the left hand and you pull out the tape on the right hand ) 1 2 3 4 1.0 ± 0.05 1.2MAX 0.525 1PIN MARK S +0.05 0.145 –0.03 0.1 ± 0.05 0.08 S +0.05 0.245 –0.04 0.65 0.08 M 1pin (Unit : mm) Direction of feed Reel ∗ Order quantity needs to be multiple of the minimum quantity. www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. 19/19 2010.08 - Rev.D Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2010 ROHM Co., Ltd. All rights reserved. R1010A