TECHNICAL NOTE
High Reliability Series Serial EEPROM Series
SPI BUS Serial EEPROMs
Supply voltage 1.8V~5.5V Operating temperature –40°C~+85°C type
BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W
● Description BR25L□□□-W series is a serial EEPROM of SPI BUS interface method.
Features ● ● ● ● ● ● ● ● ● High speed clock action up to 5MHz (Max.) Wait function by HOLD terminal Part or whole of memory arrays settable as read only memory area by program 1.8 ~ 5.5V single power source action most suitable for battery use Page write mode useful for initial value write at factory shipment Highly reliable connection by Au pad and Au wire For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1) Auto erase and auto end function at data rewrite Low current consumption At write action (5V) : 1.5mA (Typ.) At read action (5V) : 1.0mA (Typ.) Page write At standby action (5V) : 0.1μA (Typ.) Number of Address auto increment function at read action pages Write mistake prevention function Write prohibition at power on Write prohibition by command code (WRDI) Product Write prohibition by WP pin number Write prohibition block setting by status registers (BP1, BP0) Write mistake prevention function at low voltage SOP8, SOP-J8, SSOP-B8, TSSOP-B8, MSOP8 TSSOP-B8J package *1 *2 Data at shipment Memory array : FFh, status register WPEN, BP1, BP0 : 0 Data kept for 40 years Data rewrite up to 1,000,000 times *1 BR25L080/160-W : SOP8, SOP-J8, SSOP-B8, TSSOP-B8 *2 BR25L320/640-W : SOP8, SOP-J8
● ●
16 Byte BR25L010-W BR25L020-W BR25L040-W
32 Byte BR25L080-W BR25L160-W BR25L320-W BR25L640-W
● ● ● ●
BR25L series
Capacity 1Kbit 2Kbit 4Kbit 8Kbit 16Kbit 32Kbit 64Kbit Bit format 128 X 8 256 X 8 512 X 8 1K X 8 2K X 8 4K X 8 8K X 8 Type BR25L010-W BR25L020-W BR25L040-W BR25L080-W BR25L160-W BR25L320-W BR25L640-W
Power source voltage
SOP8
F
SOP-J8
FJ
SSOP-B8
FV
TSSOP-B8
FVT
MSOP8
FVM
TSSOP-B8J
FVJ
1.8 ~ 5.5V 1.8 ~ 5.5V 1.8 ~ 5.5V 1.8 ~ 5.5V 1.8 ~ 5.5V 1.8 ~ 5.5V 1.8 ~ 5.5V Oct. 2008
Absolute maximum ratings (Ta = 25˚C)
Parameter
Impressed voltage
Recommended action conditions
Unit V
*1 *2 *3
Symbol VCC
Limits -0.3 ~ +6.5
450(SOP8) 450(SOP-J8)
Parameter Power source voltage Input voltage
Symbol VCC Vin
Limits 1.8 ~ 5.5 0 ~ VCC Limits Typ.
Unit V
Permissible dissipation
Pd
300(SSOP-B8) 310(MSOP8) 310(TSSOP-B8J)
mW
Memory cell characteristics (Ta=25˚C, VCC=1.8 ~ 5.5V)
Parameter Number of data rewrite times Data hold years
*1 *1
330(TSSOP-B8) *4
*5 *6
Min. 1,000,000 40
Max.
Unit Times Years
– –
– –
Storage temperature range Operating temperature range
Tstg Topr
Terminal voltage
–
-65 ~ +125 -40 ~ +85 -0.3 ~ VCC+0.3
˚C ˚C V
*1:Not 100% TESTED
Input / output capacity (Ta=25˚C, frequency=5MHz)
Parameter Input capacity *1 Output capacity *1 Symbol Conditions CIN VIN=GND COUT VOUT=GND Min.
･When using at Ta = 25˚C or higher, 4.5mW (*1, *2), 3.0mW (*3), 3.3mW(*4), 3.1mW (*5, *6) to be reduced per 1˚C
– –
Max. 8 8
Unit pF pF
*1:Not 100% TESTED
Electrical characteristics (Unless otherwise specified, Ta = – 40 ~ +85˚C, VCC = 1.8 ~ 5.5V)
Parameter "H" input voltage 1 "L" input voltage 1 "L" output voltage 1 "L" output voltage 2 "H" output voltage 1 "H" output voltage 2 Input leak current Output leak current Symbol VIH1 VIL1 VOL1 VOL2 VOH1 VOH2 ILI ILO ICC1 Limits Typ. Min. 0.7x – VCC -0.3 0 0 VCC -0.5 VCC -0.2 -1 -1 Max. VCC +0.3 0.3x VCC 0.4 0.2 VCC VCC 1 1 1.0 Unit V V V V V V µA µA mA 1.8≤VCC≤5.5V 1.8≤VCC≤5.5V IOL=2.1mA(VCC=2.5V ~ 5.5V) IOL=150µA(VCC=1.8V ~ 2.5V) IOH=-0.4mA(VCC=2.5V ~ 5.5V) IOH=-100µA(VCC=1.8V ~ 2.5V) VIN=0 ~ VCC VOUT=0 ~ VCC,CS=VCC VCC=1.8V,fSCK=2MHz,tE/W=5ms Byte write Page write Write status register VCC=2.5V,fSCK=5MHz,tE/W=5ms Byte write Page write Write status register VCC=5.5V,fSCK=5MHz,tE/W=5ms Byte write Page write Write status register VCC=2.5V,fSCK=5MHz Read Read status register VCC=5.5V,fSCK=5MHz Read Read status register VCC=5.5V CS=HOLD=WP=VCC,SCK=SI=VCC or =GND,SO=OPEN
• Radiation resistance design is not made.
Conditions
– – – – – – – –
–
Current consumption at write action
ICC2
–
–
2.0
mA
ICC3
–
–
3.0
mA
Current consumption at read action
ICC4
– – –
– – –
1.5
mA
ICC5 Standby current ISB
2.0 2
mA µA
Block diagram
CS INSTRUCTION DECODE CONTROL CLOCK SCK GENERATION WRITE INHIBITION HIGH VOLTAGE GENERATOR VOLTAGE DETECTION
SI
INSTRUCTION REGISTER ADDRESS REGISTER DATA REGISTER ADDRESS DECODER READ/WRITE AMP
7~13bit *1
STATUS REGISTER
7~13bit *1
HOLD
1K~64K EEPROM
8bit
WP
8bit
*1 7bit : BR25L010-W 8bit : BR25L020-W 9bit : BR25L040-W 10bit : BR25L080-W 11bit : BR25L160-W 12bit : BR25L320-W 13bit : BR25L640-W
SO
Fig.1 Block diagram
2/16
Pin assignment and description
VCC HOLD SCK SI
Terminal name Input/output
VCC GND CS SCK SI SO
Function
Power source to be connected All input / output reference voltage, 0V Chip select input Serial clock input Start bit, ope code, address, and serial data input Serial data output Hold input Command communications may be suspended temporarily (HOLD status). Write protect input Write command is prohibited.*1 Write status register command is prohibited.
*1:BR25L010/020/040-W
BR25L010-W BR25L020-W BR25L040-W BR25L080-W BR25L160-W BR25L320-W BR25L640-W
CS SO WP GND
Input Input Input Output Input Input
– –
HOLD WP
Fig. 2 Pin assignment diagram
Operating timing characteristics (Ta = -40 ~ +85˚C, unless otherwise specified, load capacity CL1 100pF)
Parameter Symbol 1.8≤VCC
